TW201803184A - 具有封裝錨定的能源存儲設備 - Google Patents
具有封裝錨定的能源存儲設備Info
- Publication number
- TW201803184A TW201803184A TW106112157A TW106112157A TW201803184A TW 201803184 A TW201803184 A TW 201803184A TW 106112157 A TW106112157 A TW 106112157A TW 106112157 A TW106112157 A TW 106112157A TW 201803184 A TW201803184 A TW 201803184A
- Authority
- TW
- Taiwan
- Prior art keywords
- storage device
- substrate
- thin film
- micro
- layer
- Prior art date
Links
- 238000004873 anchoring Methods 0.000 title claims abstract description 19
- 238000004146 energy storage Methods 0.000 title claims abstract description 16
- 238000005538 encapsulation Methods 0.000 title abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 100
- 238000003860 storage Methods 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 238000000034 method Methods 0.000 claims description 17
- 238000004806 packaging method and process Methods 0.000 claims description 14
- 239000008393 encapsulating agent Substances 0.000 abstract description 22
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 238000013459 approach Methods 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 42
- 229920000642 polymer Polymers 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 230000035515 penetration Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 239000002861 polymer material Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229920001169 thermoplastic Polymers 0.000 description 5
- 229910012851 LiCoO 2 Inorganic materials 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 239000010445 mica Substances 0.000 description 3
- 229910052618 mica group Inorganic materials 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 229910012305 LiPON Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 239000002200 LIPON - lithium phosphorus oxynitride Substances 0.000 description 1
- 229910015645 LiMn Inorganic materials 0.000 description 1
- 229910015643 LiMn 2 O 4 Inorganic materials 0.000 description 1
- 229910014689 LiMnO Inorganic materials 0.000 description 1
- 229910013290 LiNiO 2 Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- YGANSGVIUGARFR-UHFFFAOYSA-N dipotassium dioxosilane oxo(oxoalumanyloxy)alumane oxygen(2-) Chemical group [O--].[K+].[K+].O=[Si]=O.O=[Al]O[Al]=O YGANSGVIUGARFR-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011262 electrochemically active material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910000625 lithium cobalt oxide Inorganic materials 0.000 description 1
- BFZPBUKRYWOWDV-UHFFFAOYSA-N lithium;oxido(oxo)cobalt Chemical compound [Li+].[O-][Co]=O BFZPBUKRYWOWDV-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920006280 packaging film Polymers 0.000 description 1
- 239000012785 packaging film Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H01M50/24—Mountings; Secondary casings or frames; Racks, modules or packs; Suspension devices; Shock absorbers; Transport or carrying devices; Holders characterised by physical properties of casings or racks, e.g. dimensions adapted for protecting batteries from their environment, e.g. from corrosion
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/362—Laser etching
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- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/16—Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infrared heating
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- H01M4/525—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
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- H01M6/40—Printed batteries, e.g. thin film batteries
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- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K2101/34—Coated articles, e.g. plated or painted; Surface treated articles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
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- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
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- B29K2995/00—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
- B29K2995/0003—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds having particular electrical or magnetic properties, e.g. piezoelectric
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- B29L2031/00—Other particular articles
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- H01M2300/0017—Non-aqueous electrolytes
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- H01M2300/0065—Solid electrolytes
- H01M2300/0068—Solid electrolytes inorganic
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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Abstract
本文中的方法提供了改良的能源存儲設備封裝。在一個方法中,一薄膜存儲設備堆疊形成在一基板的一第一側頂上,且一封裝物形成在該薄膜存儲設備堆疊上方。形成於該薄膜存儲設備堆疊附近之該基板中的一凹口提供了該封裝物的一錨定點。在某些方法中,該凹口被提供為部分透過該基板的一深度,且具有用以促進該封裝物及該基板間之實體耦合的一幾何形狀。
Description
此案主張於2016年4月14日所提出之標題為「Volume Change Accommodating TFE Materials」之第62/322,415號之美國臨時專利申請案的優先權,且其整體內容以引用方式併入本文中。
本實施例關於用以保護有效設備的薄膜封裝(TFE)技術,且更具體而言是關於具有錨定的封裝物的能源存儲設備。
薄膜封裝(TFE)技術通常是採用於設備中,其中該等設備單純是電氣設備或光電設備(例如有機發光二極體(OLED))。除了可能經歷設備運作期間來自熱生成的大致為小的全域熱膨脹以外,這些電氣設備及光電設備在運作期間並不展現體積變化,因為只有電子及光子在運作期間在設備內輸送。由於設備之全域熱膨脹的如此全域效應可能以類似方式影響包括TFE之給定設備的每個元件,且因此可能不導致顯著的內部應力。如此,單純電氣設備或光電設備中之TFE的機能一般不易受到來自運作期間之不均勻膨脹的應力。
值得注意的是,在電化學設備(「化學」部分)中,物質(例如元素、離子或具有實體體積的其他化學物種(電子的實體體積可被視為大約為零))在實體體積移動的情況下在運作期間在設備內輸送。對於習知的電化學設備而言,例如對於基於鋰(Li)的薄膜電池(TFB)而言,Li在電子在連接至TFB的外部電路中輸送時從電池的一側輸送到另一側,其中電子以相對的方向移動至化學電荷載體。
由Li TFB所經歷之體積改變的一個具體示例發生在將具有鋰鈷氧化物(LiCoO2
)陰極(~15μm至17μm厚的LiCoO2
)的薄膜電池充電時。相當於若干微米厚的層(例如6微米(假設100%密的Li))的一定量的Li可在負載約為1 mAhr/cm2
時輸送至陽極。在Li在放電程序中返回陰極側時,可能在陽極側上造成類似的體積減少(假設100%的效率)。陰極側亦可能以相反的方式經歷體積改變,儘管此類改變相較於陽極側一般是較小的。
在電池單元充電及放電的循環期間,封裝層可能由於雷射邊緣切割的熱影響區(HAZ)及沿單元邊緣之不良的封裝層黏著的組合而沿單元邊緣升降。此類單元邊緣剝層導致過早引入不想要的濕氣及氣體穿透,對電池單元的效能造成不利的衝擊。並且,封裝層單元邊緣濕氣阻擋側向寬度設計規則受限於針對較高的單元容量而最大化單元面積。這留下了側向封裝保護可用的最小限度的單元邊緣表面面積,且其結果是,濕氣穿透側向路徑是短的。
是針對這些及其他考量而提供本揭示案。
鍳於上文,本文中的方法提供了改良的能源存儲設備封裝。在一個方法中,一薄膜存儲設備堆疊形成在一基板的一第一側頂上,且一封裝物形成在該薄膜存儲設備堆疊上方。在形成該封裝物之前,一凹口可形成於該薄膜存儲設備堆疊附近的該基板中,其中該封裝物延伸進該凹口。在某些方法中,該凹口被提供為部分透過該基板的一深度,且具有用以促進錨定其中之該封裝物的一幾何形狀。
依據本揭示案之示例性能源存儲設備可包括:一薄膜存儲設備堆疊,形成在一基板的一第一側頂上;一封裝物,形成在該薄膜存儲設備堆疊上方;及一凹口,形成於該薄膜存儲設備堆疊附近的該基板中,其中該封裝物延伸進該凹口。
依據本揭示案之示例性微電池可包括:一薄膜存儲設備堆疊,形成在一基板的一上表面頂上;及一薄膜封裝物,形成在該基板上方,其中該薄膜封裝物黏著至該薄膜存儲設備堆疊的受暴面且黏著至該基板的該上表面。該微電池更包括一凹口,該凹口形成於該薄膜存儲設備堆疊附近的該基板中,其中該薄膜封裝物固定在該凹口內。
用於依據本揭示案形成一微電池單元的示例性方法可包括以下步驟:在一基板的一第一側頂上提供一薄膜存儲設備堆疊;在該薄膜存儲設備堆疊附近的該基板中提供一凹口;及在該薄膜存儲設備堆疊上方形成一薄膜封裝物,其中該薄膜封裝物形成於該基板中所形成的該凹口內。
現將參照隨附的繪圖在下文中更完全地描述依據本揭示案的一或更多個方法,在該等繪圖中圖示了設備及方法的實施例。該等方法可以許多不同形成實現且不要被建構為限於本文中所闡述的實施例。反而,這些實施例被提供為使得此揭示案將是透徹及完整的,且將完全向本領域中具技藝者傳達設備及方法的範圍。
為了方便及明確起見,例如為「頂」、「底」、「上」、「下」、「垂直」、「水平」、「側向」及「縱向」的用語在本文中將用以描述這些元件及它們構成部件的相對放置及定向,每個相對放置及定向是相對於如圖式中所示之微電池的幾何形狀及定向。術語將包括具體提及的用字、其衍生物及類似重要性的用字。
如本文中所使用的,以單數記載且同用字「一(a)」或「一(an)」使用的構件或操作要被瞭解為包括複數構件或操作,直到明確記載此類排除為止。並且,對於本揭示案之「一個實施例」、「一實施例」或「示例性實施例」的指稱不要作為限制。額外的實施例亦可併入所記載的特徵。
如本文中進一步描述的,本揭示案提供用於藉由在開始封裝程序之前首先引入單元邊緣基板溝或凹口,來在微電池單元的有效區域周圍錨定一或更多個封裝層的技術。溝或凹口可為提供在電池單元邊緣周圍的連續的特徵或複數個重複的特徵,且可取決於單元有效面積(例如單元容量)對實際面積的利用比率互償而按設計量身定制。取決於封裝物的側壁塗覆能力,溝或重複特徵邊緣可為尖銳的或傾斜的。可實施可選的助黏劑基板表面處理以進一步強化基板表面對於封裝物的黏著力。封裝物可被塗覆及錨定在凹口內以強化邊緣黏著力及最小化邊緣剝層。並且,單元邊緣基板溝或凹口透過封裝物提供了較長的濕氣穿透路徑,以幫助使濕氣免於到達微電池單元的有效區域,因此改良了電池單元的週期壽命及電荷蓄積。
現在看到圖 1A-B
,將更詳細地描述依據本揭示案之各種實施例之單元矩陣之微電池單元100的各別的頂及側橫截面圖。如所示,微電池單元100包括薄膜存儲設備堆疊(例如薄膜存儲設備堆疊130)及形成於基板112之第一表面(例如上/頂面)108中的凹口102。在某些實施例中,凹口102為部分地透過基板112(例如到達深度「D」)所形成的連續形成的深溝狀錨定溝,且具有大致矩形的形狀。在其他實施例中,凹口102可採取各種不同形式,如下文將更詳細描述的。
基板112用作能源存儲設備(例如薄膜固態微電池)的支架,且是以環境元素無法穿透的材料製作,具有相對平滑的處理表面以在其上形成薄膜。基板112亦可具有充足的機械強度以在製造溫度下及在電池運作溫度下支撐所沉積的薄膜。例如,取決於外表面所要的電氣性質,基板112可為絕緣體、半導體或導體。更具體而言,取決於應用,基板112可以陶瓷、金屬或玻璃製造,例如氧化鋁、矽玻璃或甚至是鋁或鋼。
在一個實施例中,基板112包括雲母、一般具有白雲母結構的層狀矽酸鹽及一定化學計量的KAl3
Si3
O10
(OH)2
。雲母具有沿大的平坦面的方向有著良好裂解性質的六邊平坦單斜晶體結構。因為雲母的晶體結構,基板112可沿其基底側向裂解平面分裂成薄箔,以提供具有相較於大部分是化學或機械拋光的表面而言是較平滑的表面的薄基板。
如圖 1A-B
中進一步圖示,薄膜存儲設備堆疊130沿基板112的第一表面108形成於該基板上。薄膜存儲設備堆疊130可構成電化學設備(例如薄膜固態電池、微電池設備、電致變色窗口或其他電化學設備)的有效層。如所示,薄膜存儲設備堆疊130具有大致矩形的形狀,其中凹口102被提供在其多個側附近。在某些實施例中,薄膜存儲設備堆疊130是在凹口102之前形成的。在其他實施例中,凹口102是在薄膜存儲設備堆疊130形成之前形成的。
薄膜存儲設備堆疊130可包圍基板112及安置在基板112上的源區域。在各種實施例中,源區域可表示薄膜存儲設備堆疊130的陰極,其中源區域充當擴散物(例如鋰)的來源,且其中擴散物可以可逆地向及自源區域擴散。薄膜存儲設備堆疊130亦可包括安置在源區域上的中間區域(未具體圖示)及安置在中間區域上的選擇性擴充區域。選擇性的擴充區域可例如為薄膜存儲設備堆疊130的陽極區域。在某些實施例中,薄膜存儲設備堆疊130之各層的薄膜可藉由薄膜製造程序來形成,例如物理或化學氣相沉積法(PVD或CVD)、氧化、氮化或電鍍。
儘管未圖示,在某些實施例中,可在薄膜存儲設備堆疊130的陽極及陰極之間提供電解質層。在某些實施例中,電解質層可例如為非晶質的鋰磷氮氧化物膜(稱為LiPON膜)。在一個非限制性的實施例中,LiPON膜是Lix
POy
Nz
的形式。在一個方法中,電解質層具有從約0.1微米至約5微米的厚度。電解質厚度是適當地大的,以提供充分的保護而免於使陰極及陽極短路,且是適當地小的,以減少離子路徑來最小化電阻及減少應力。
在某些實施例中,薄膜存儲設備堆疊130的陽極及陰極各包括電化學上起作用的材料,例如非晶質的五氧化二釩(V2
O5
),或若干晶質化合物中的一者(例如TiS2
、LiMnO2
、LiMn2
O2
、LiMn2
O4
、LiCoO2
及LiNiO2
)。在一個非限制性的實施例中,陽極是以Li製作,而陰極是以LiCoO2
製作。陽極或陰極的合適厚度可從約0.1微米至約50微米。
薄膜存儲設備堆疊130亦可包括沉積於基板112或薄膜存儲設備堆疊130之任何其他層的表面上的一或更多個黏著層(未圖示),以改良疊置的層的黏著性。黏著層可包括金屬,例如鈦、鈷、鋁或其他金屬。在某些實施例中,黏著層可為陶瓷材料,例如具有一定化學計量的Al2
O3
的AlOx。
看到圖 2A-C
,現將描述具有依據本揭示案之各種實施例形成於微電池單元100上之封裝物140之該微電池單元的各別的頂及側橫截面圖。如所示,封裝物140形成在微電池單元100上方,使得封裝物140黏著至薄膜存儲設備堆疊130、基板112的第一表面108及黏著於凹口102內。封裝物140要延伸進凹口102,以將封裝物140錨定至基板112,以及提供用於氧化劑的蜿蜒路徑。為了完成此步驟,封裝物140可擴張以部分或完全填充凹口102。在示例性實施例中(如圖 2C
中最佳地圖示的),封裝物140黏著至凹口102的側壁150及底面152。凹口102內之封裝物140的頂面154凹進基板112的第一表面108下方而例如達到深度「D1」。其結果是,封裝物140是非平坦的,且反而是符合凹口102的輪廓以提供用於氧化劑滲透的蜿蜒路徑。一旦形成,封裝物140、薄膜存儲設備堆疊130及基板112就一起構成了經封裝的微能源存儲設備144。
在各種實施例中,封裝物140為薄膜封裝物,該薄膜封裝物包括柔的、能夠符合微電池單元100(包括凹口102)之幾何形狀的適應實體體積的層。在一個實施例中,封裝物140可以具有良好密封性質的聚合物材料製作,以針對外部環境保護薄膜存儲設備堆疊130的敏感電池元件。例如,封裝物140的聚合物材料可被選擇為提供良好的濕氣屏障,且具有足夠低的透水率,以允許薄膜存儲設備堆疊130的層在潮濕的外部環境中生存。
在示例性實施例中,封裝物140可包括聚對二甲苯、浸漬或螺旋塗覆的聚合物或介電材料、噴塗的聚合物或介電塗層、或CVD介電塗層。在一個實施例中,封裝物140可為二元的薄膜封裝物,其中二元體可包括聚合物及介電質,或聚合物及金屬層。封裝物140可使用蒸氣或液相塗覆技術來形成,以允許封裝物140形成於凹口102中的各者內。此步驟具有以下優點:若薄膜存儲設備堆疊130膨脹(例如在充電時),則使用封裝物140的固有黏聚強度來在凹口102內將封裝物140固持在位。
在各種實施例中,封裝物140可具有變化的尺度以適應擴充區域中之不同材料之體積或厚度上的改變。例如,在薄膜存儲設備堆疊130之陽極或陽極的一部分構成選擇性擴充區域的情況下,封裝物140可在厚度上擴張或收縮以適應陽極厚度上的增加或減少,造成薄膜存儲設備堆疊130之層的較少的應力、較少的機械性故障及較佳的保護。
在其他實施例中,封裝物140可為能夠在處理期間經受化學改變以變得「開始」形成硬的固態材料的熱固性或熱塑性聚合物。熱固性聚合物可為具有三維聚合鏈網路的高度交鏈聚合物。熱固性聚合物材料在加熱時經受化學以及相變化。由於它們緊密交鏈的結構,熱固性聚合物可能相較於大部分的熱塑性聚合物是較不可撓的。
在又其他的實施例中,封裝物140可為在高溫下有韌性的可熔融處理的熱塑性聚合物(例如在熔融或黏滯相下時形成的聚合物)。熱塑性聚合物被選擇為在從約65° C至約200° C的溫度下軟化,以允許在不使電池單元熱降解的情況下在電池單元周圍模製聚合物材料。合適的熱塑性聚合物例如包括聚偏二氯乙烯(PVDC)。
現在看到圖 3A-4B
,將更詳細地描述依據本揭示案之各種實施例形成於微電池單元200上方之封裝物240的各別的頂及側橫截面圖。如所示,微電池單元200包括先前與圖 1-3B
中所示之微電池單元100的基板112及薄膜存儲設備堆疊130關聯描述的許多或所有特徵,且如此將為了簡化起見不進一步詳細描述。在此實施例中,封裝物240可包括複數個封裝層。例如,如圖 3A-B
中所示,封裝物240的第一層241形成在薄膜存儲設備堆疊230上方,且沿基板212的第一表面(例如上/頂面)208終結。在某些實施例中,第一層241黏著至薄膜存儲設備堆疊230的受暴面,但不延伸進凹口202。在其他實施例中,封裝物240的第一層241形成於凹口202內。
封裝物240的第一層241可為具有良好密封性質的聚合物,以針對外部環境保護薄膜存儲設備堆疊230的敏感電池元件。在各種實施例中,封裝物240的第一層241可為噴塗或螺旋塗覆的聚合物及/或介電塗層,或CVD介電塗層。
如圖 4A-B
中所示,封裝物240的第二層243可接著形成在第一層241上方。第二層243可形成在微電池單元200的所有部分上方,使得第二層243黏著至第一層241、基板212之第一表面208的頂側及黏著於凹口202內。封裝物240的第二層243要流進凹口202以將封裝物240錨定至基板212。在示例性實施例中,封裝物240的第二層243可擴張以部分或完全填充凹口202,因此增加封裝物240及基板212的實體耦合。
在各種實施例中,封裝物240的第二層243可包括聚對二甲苯、浸漬塗覆或螺旋塗覆的聚合物或介電材料、噴塗的聚合物或介電塗層、或CVD介電塗層。封裝物240的第二層243可使用蒸氣或液相塗覆技術來形成,以在凹口202內形成封裝物的第二層243。此步驟具有以下優點:若薄膜存儲設備堆疊230擴張,則使用封裝物240之第二層243的固有黏聚強度來在凹口202內將封裝物240固持在位。在各種實施例中,封裝物240的第一層241及第二層243可為不同或相同的材料。
現在看到圖 5A-C
,將更詳細描述依據本揭示案之實施例之各種凹口佈置的各別的頂視圖。如圖 5A
中所示,微電池單元300的複數個錨定凹口302可形成在薄膜存儲設備堆疊330的各轉角附近。在此實施例中,該複數個凹口302中的各者具有矩形形狀,且可被形成為部分或完全透過基板312。該複數個凹口302的二或更多個凹口可形成於薄膜存儲設備堆疊330的相對側上,如所示。在其他實施例中,可提供較大或較小數量的凹口302。
如進一步圖示的,錨定凹口302藉由被形成為部分透過基板312的溝303接合在一起。在各種實施例中,相較於該複數個錨定凹口302,溝303可具有不同的形狀,及/或延伸至不同的深度。例如,該複數個錨定凹口302可完全延伸透過基板312,但溝303僅部分形成進基板312。溝303可提供形成在薄膜存儲設備堆疊330上方之封裝物的進一步錨定,以及薄膜存儲設備堆疊330周圍用於氧化劑/濕氣滲透的連續路徑。
在圖 5B
中所示的實施例中,微電池單元362的複數個錨定凹口360可形成在薄膜存儲設備堆疊331的各側附近。在此實施例中,該複數個錨定凹口360中的各者具有圓形形狀,且可被形成為部分或完全透過基板364。錨定凹口360中的二或更多者可沿薄膜存儲設備堆疊331的相對側壁而形成。在其他實施例中,可提供較大或較小數量的錨定凹口360。如進一步圖示的,錨定凹口360可藉由被形成為部分透過基板364的溝365接合在一起。在各種實施例中,溝365是圓形的,且相較於該複數個錨定凹口360可延伸至相同或不同的深度。溝365可進一步將封裝物錨定至基板364,以及在薄膜存儲設備堆疊330周圍提供用於氧化劑/濕氣滲透的連續路徑。
在圖 5C
中所示的實施例中,微電池單元372的複數個大致矩形的凹口370可形成在薄膜存儲設備堆疊333周圍。在此實施例中,凹口370為被形成為部分或完全透過基板374的錨定凹口。如所示,凹口370沿薄膜存儲設備堆疊333的各側延伸。在使用期間,凹口370將封裝物錨定至基板374,且充當濕氣屏障及通路,引導濕氣遠離薄膜存儲設備堆疊333的敏感材料。
現在看到圖 6A-B
,將更詳細描述依據本揭示案之實施例之各種凹口幾何形狀的各別的頂視圖。吾人將理解的是,圖 6A-B
中所示之示例性凹口的形狀及配置是非限制性的,且用於在其中接收及固定封裝物的各種其他幾何形狀在本揭示案之實施例的範圍內是可能的。如圖 6A
中所示,微電池單元400之基板412中的示例性凹口402可形成在薄膜存儲設備堆疊430附近。凹口402具有底面421(形成至深度「D1」)及一組傾斜側壁423。傾斜側壁423定義凹口402的上區段425及下區段427,其中下區段427的寬度「W1」大於上區段425的寬度「W2」。隨後形成於凹口402內的封裝物(未圖示)被配置為符合凹口402的幾何形狀。例如,下區段427內之封裝物的一部分可大致較沿上區段425的封裝物為寬。並且,例如在薄膜存儲設備堆疊430擴張的情況下,傾斜側壁423與凹口402朝向上區段425窄化的寬度一起使得從凹口402移除封裝物140更加困難。
在圖 6B
中所展示的實施例中,凹口402具有底面421(形成至深度「D1」)、上區段425及下區段427,其中下區段427的一或更多個空腔445側向延伸於基板412內。上區段425的側壁423可為傾斜或直的。如所示,下區段427的寬度「W1」大於上區段425的寬度「W2」。隨後形成於凹口402內的封裝物(未圖示)被配置為符合凹口402的幾何形狀。例如,封裝物可沿側壁423流動且流進空腔445。空腔445的較寬的幾何形狀與凹口402朝向上區段425更窄的寬度一起增加了封裝物及凹口402之間的實體耦合。例如在薄膜存儲設備堆疊430擴張的情況下,這使得從凹口402移除封裝物是更加困難的。
鍳於上文,藉由本文中所揭露的實施例至少達成了以下優點。第一優點是使用一組封裝物錨定凹口來減少了造成過早引入不想要的濕氣及氣體穿透的封裝物剝層。第二優點包括在微電池單元堆疊膨脹的情況下(例如在充電時)使用封裝物的本身黏聚強度來將封裝膜層固持在位。第三優點包括透過溝或凹口來提供延伸的側向濕氣穿透路徑以供改良電池單元的週期壽命及電荷蓄積。第四優點包括使用溝或凹口來增加邊緣接觸面面積,進一步協助黏著封裝物。
儘管已在本文中描述本揭示案的某些實施例,本揭示案不限於此,因為本揭示案在範圍上是如本技術領域將允許地一樣廣泛且本說明書可被同樣地解讀。因此,以上說明不要被建構為是限制。反而,以上說明僅作為特定實施例的範例。本領域中具技藝者將設想到本文隨附之請求項之範圍及精神內的其他更改。
100‧‧‧微電池單元
102‧‧‧凹口
108‧‧‧第一表面
112‧‧‧基板
130‧‧‧薄膜存儲設備堆疊
140‧‧‧封裝物
144‧‧‧經封裝的微能源存儲設備
150‧‧‧側壁
152‧‧‧底面
154‧‧‧頂面
200‧‧‧微電池單元
202‧‧‧凹口
208‧‧‧第一表面
212‧‧‧基板
230‧‧‧薄膜存儲設備堆疊
240‧‧‧封裝物
241‧‧‧第一層
243‧‧‧第二層
300‧‧‧微電池單元
302‧‧‧凹口
303‧‧‧溝
312‧‧‧基板
330‧‧‧薄膜存儲設備堆疊
331‧‧‧薄膜存儲設備堆疊
333‧‧‧薄膜存儲設備堆疊
360‧‧‧錨定凹口
362‧‧‧微電池單元
364‧‧‧基板
365‧‧‧溝
370‧‧‧凹口
372‧‧‧微電池單元
374‧‧‧基板
400‧‧‧微電池單元
402‧‧‧凹口
412‧‧‧底面
421‧‧‧底面
423‧‧‧傾斜側壁
425‧‧‧上區段
427‧‧‧下區段
430‧‧‧薄膜存儲設備堆疊
445‧‧‧空腔
D‧‧‧深度
D1‧‧‧深度
W1‧‧‧寬度
W2‧‧‧寬度
102‧‧‧凹口
108‧‧‧第一表面
112‧‧‧基板
130‧‧‧薄膜存儲設備堆疊
140‧‧‧封裝物
144‧‧‧經封裝的微能源存儲設備
150‧‧‧側壁
152‧‧‧底面
154‧‧‧頂面
200‧‧‧微電池單元
202‧‧‧凹口
208‧‧‧第一表面
212‧‧‧基板
230‧‧‧薄膜存儲設備堆疊
240‧‧‧封裝物
241‧‧‧第一層
243‧‧‧第二層
300‧‧‧微電池單元
302‧‧‧凹口
303‧‧‧溝
312‧‧‧基板
330‧‧‧薄膜存儲設備堆疊
331‧‧‧薄膜存儲設備堆疊
333‧‧‧薄膜存儲設備堆疊
360‧‧‧錨定凹口
362‧‧‧微電池單元
364‧‧‧基板
365‧‧‧溝
370‧‧‧凹口
372‧‧‧微電池單元
374‧‧‧基板
400‧‧‧微電池單元
402‧‧‧凹口
412‧‧‧底面
421‧‧‧底面
423‧‧‧傾斜側壁
425‧‧‧上區段
427‧‧‧下區段
430‧‧‧薄膜存儲設備堆疊
445‧‧‧空腔
D‧‧‧深度
D1‧‧‧深度
W1‧‧‧寬度
W2‧‧‧寬度
隨附的繪圖繪示迄今針對實際應用受揭露實施例的原理所設計之受揭露實施例的示例性方法,且其中:
圖 1A
描繪依據本揭示案之示例性實施例之微電池單元之薄膜存儲設備堆疊及凹口的頂視圖;
圖 1B
描繪依據本揭示案之示例性實施例之圖 1A
之微電池單元之薄膜存儲設備堆疊及凹口的側橫截面圖;
圖 2A
描繪依據本揭示案之示例性實施例形成在微電池單元上方之封裝物的頂視圖;
圖 2B
描繪依據本揭示案之示例性實施例形成在圖 2A
之微電池單元上方之封裝物的側橫截面圖;
依據本揭示案之示例性實施例,圖 2C
描繪圖 2B
中所示之凹口中之一者的特寫側橫截面圖;
圖 3A
描繪依據本揭示案之示例性實施例形成在微電池單元之薄膜存儲設備堆疊上方之封裝物之第一層的頂視圖;
圖 3B
描繪依據本揭示案之示例性實施例形成在圖 3A
之微電池單元之薄膜存儲設備堆疊上方之封裝物之第一層的側橫截面圖;
圖 4A
描繪依據本揭示案之示例性實施例形成在微電池單元上方之封裝物之第二層的頂視圖;
圖 4B
描繪依據本揭示案之示例性實施例形成在圖 4A
之微電池單元上方之封裝物之第二層的側橫截面圖;
圖 5A-C
描繪依據本揭示案之示例性實施例之各種凹口佈置的頂視圖;及
圖 6A-B
描繪依據本揭示案之示例性實施例之各種凹口幾何形狀的側橫截面圖。
該等繪圖不一定是按比例的。該等繪圖僅為表示,不欲描寫本揭示案的特定參數。該等繪圖是要描繪本揭示案的示例性實施例,且因此不被視為範圍上的限制。在該等繪圖中,類似的標號表示類似的構件。
並且,為了說明明確起見,圖式之某些部分的某些構件可被忽略或不依比例繪示。為了說明明確起見,橫截面圖可為「切片」或「近視」的橫截面圖的形式,忽略在「真實」的橫截面圖中原本可見的某些背景線。並且,為了明確起見,在某些繪圖中可忽略某些參考標號。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
(請換頁單獨記載) 無
100‧‧‧微電池單元
102‧‧‧凹口
108‧‧‧第一表面
130‧‧‧薄膜存儲設備堆疊
140‧‧‧封裝物
144‧‧‧經封裝的微能源存儲設備
D‧‧‧深度
Claims (15)
- 一種微能源存儲設備,包括: 一薄膜存儲設備堆疊,形成在一基板的一第一側頂上; 一封裝物,形成在該薄膜存儲設備堆疊上方;及 一凹口,形成於該薄膜存儲設備堆疊附近的該基板中,其中該封裝物延伸進該凹口。
- 如請求項1所述之微能源存儲設備,其中該凹口為被形成為部分透過該基板之一深度的一錨定溝。
- 如請求項1所述之微能源存儲設備,更包括形成於該基板中的複數個凹口。
- 如請求項1所述之微能源存儲設備,其中該凹口具有一下區段及一上區段,且其中該下區段的一寬度大於該上區段的一寬度。
- 如請求項4所述之微能源存儲設備,其中該下區段包括側向延伸於該基板內的一空腔。
- 如請求項1所述之微能源存儲設備,其中該封裝物包括複數個封裝層。
- 如請求項6所述之微能源存儲設備,其中該複數個封裝層的一第一層形成在該薄膜存儲設備堆疊上方且沿該基板的該第一側終結,且其中該複數個封裝層的一第二層形成在該複數個封裝層的該第一層上方且延伸進形成在該基板中的該凹口。
- 一種微電池單元,包括: 一薄膜存儲設備堆疊,形成在一基板的一上表面頂上; 一薄膜封裝物,形成在該基板上方,該薄膜封裝物黏著至該薄膜存儲設備堆疊的受暴面且黏著至該基板的該上表面;及 一凹口,形成於該薄膜存儲設備堆疊附近的該基板中,其中該薄膜封裝物固定在該凹口內。
- 如請求項8所述之微電池單元,其中該凹口為被形成為部分透過該基板之一深度的一錨定溝。
- 如請求項8所述之微電池單元,其中複數個凹口的二或更多個凹口形成在該薄膜存儲設備堆疊的相對側上。
- 如請求項8所述之微電池單元,其中該凹口具有一下區段及一上區段,該下區段的一寬度大於該上區段的一寬度。
- 如請求項8所述之微電池單元,其中該薄膜封裝物包括複數個封裝層,其中該複數個封裝層的一第一層形成在該薄膜存儲設備堆疊上方且沿該基板的該上側終結,且其中該複數個封裝層的一第二層形成在該複數個封裝層的該第一層上方且延伸進形成在該基板中的該凹口。
- 一種形成一微電池單元的方法,包括以下步驟: 在一基板的一第一側上提供一薄膜存儲設備堆疊; 在該薄膜存儲設備堆疊附近的該基板中提供一凹口;及 在該薄膜存儲設備堆疊上方形成一薄膜封裝物,其中該薄膜封裝物更形成於該基板中所形成的該凹口內。
- 如請求項13所述之方法,更包括以下步驟:在該基板中形成複數個凹口,其中該複數個凹口的二或更多個凹口形成於該薄膜存儲設備堆疊的相對側上。
- 如請求項13所述之方法,其中形成該薄膜封裝物的步驟包括以下步驟: 在該薄膜存儲設備堆疊上方形成一第一層,其中該第一層沿該基板的該第一層終結;及 在該第一層上方形成一第二層,其中該第二層延伸進形成於該基板中的該凹口。
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- 2017-04-14 TW TW106112582A patent/TW201807861A/zh unknown
- 2017-04-14 WO PCT/US2017/027582 patent/WO2017180975A2/en active Application Filing
- 2017-04-14 WO PCT/US2017/027536 patent/WO2017180942A1/en active Application Filing
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