CN112397569A - 一种用于表面声波滤波器的具有背面金属层的晶圆及其制造方法 - Google Patents
一种用于表面声波滤波器的具有背面金属层的晶圆及其制造方法 Download PDFInfo
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- CN112397569A CN112397569A CN202011190457.5A CN202011190457A CN112397569A CN 112397569 A CN112397569 A CN 112397569A CN 202011190457 A CN202011190457 A CN 202011190457A CN 112397569 A CN112397569 A CN 112397569A
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- Prior art keywords
- wafer
- metal layer
- metal film
- transparent
- photoresist
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 117
- 239000002184 metal Substances 0.000 title claims abstract description 117
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000007747 plating Methods 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 238000001020 plasma etching Methods 0.000 claims description 10
- 238000009616 inductively coupled plasma Methods 0.000 claims description 9
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 134
- 239000010410 layer Substances 0.000 description 39
- 239000007789 gas Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 210000002381 plasma Anatomy 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000001459 lithography Methods 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Acoustics & Sound (AREA)
- Ceramic Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011190457.5A CN112397569A (zh) | 2020-10-30 | 2020-10-30 | 一种用于表面声波滤波器的具有背面金属层的晶圆及其制造方法 |
Applications Claiming Priority (1)
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CN202011190457.5A CN112397569A (zh) | 2020-10-30 | 2020-10-30 | 一种用于表面声波滤波器的具有背面金属层的晶圆及其制造方法 |
Publications (1)
Publication Number | Publication Date |
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CN112397569A true CN112397569A (zh) | 2021-02-23 |
Family
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Family Applications (1)
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CN202011190457.5A Pending CN112397569A (zh) | 2020-10-30 | 2020-10-30 | 一种用于表面声波滤波器的具有背面金属层的晶圆及其制造方法 |
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CN (1) | CN112397569A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114545740A (zh) * | 2022-01-25 | 2022-05-27 | 北京中科飞鸿科技股份有限公司 | 一种半透明晶圆及其曝光过程加工方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200703894A (en) * | 2005-07-15 | 2007-01-16 | Tai Saw Technology Co Ltd | Back-side ARC edposition and duel development for high frequency surface acoustic wave device fabrication |
CN102452636A (zh) * | 2010-10-15 | 2012-05-16 | 台湾积体电路制造股份有限公司 | 用于透明衬底的处理层 |
CN107723797A (zh) * | 2016-08-11 | 2018-02-23 | 北大方正集团有限公司 | 碳化硅晶圆片的制备方法和碳化硅晶圆片 |
CN109962006A (zh) * | 2017-12-26 | 2019-07-02 | 无锡华润微电子有限公司 | SiC晶圆在线加工方法 |
-
2020
- 2020-10-30 CN CN202011190457.5A patent/CN112397569A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200703894A (en) * | 2005-07-15 | 2007-01-16 | Tai Saw Technology Co Ltd | Back-side ARC edposition and duel development for high frequency surface acoustic wave device fabrication |
CN102452636A (zh) * | 2010-10-15 | 2012-05-16 | 台湾积体电路制造股份有限公司 | 用于透明衬底的处理层 |
CN107723797A (zh) * | 2016-08-11 | 2018-02-23 | 北大方正集团有限公司 | 碳化硅晶圆片的制备方法和碳化硅晶圆片 |
CN109962006A (zh) * | 2017-12-26 | 2019-07-02 | 无锡华润微电子有限公司 | SiC晶圆在线加工方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114545740A (zh) * | 2022-01-25 | 2022-05-27 | 北京中科飞鸿科技股份有限公司 | 一种半透明晶圆及其曝光过程加工方法 |
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PB01 | Publication | ||
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TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210707 Address after: 510700 Room 202, building D, No. 136, Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant after: Guangdong Guangna Technology Development Co.,Ltd. Address before: 510700 room 1004, building D, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant before: Guangdong guangnaixin Technology Co.,Ltd. |
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TA01 | Transfer of patent application right | ||
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Effective date of registration: 20210811 Address after: 510535 Room 201, building D, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant after: Guangdong Guangdong Guangdong Hong Kong Macao Dawan District National Nanotechnology Innovation Research Institute Address before: 510700 Room 202, building D, No. 136, Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant before: Guangdong Guangna Technology Development Co.,Ltd. |
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Effective date of registration: 20210913 Address after: 510700 room 1004, building D, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant after: Guangdong guangnaixin Technology Co.,Ltd. Address before: 510535 Room 201, building D, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Applicant before: Guangdong Guangdong Guangdong Hong Kong Macao Dawan District National Nanotechnology Innovation Research Institute |
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RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20210223 |