TW201733066A - 製造包含穿過基板延伸之通孔之互連的方法 - Google Patents
製造包含穿過基板延伸之通孔之互連的方法 Download PDFInfo
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- TW201733066A TW201733066A TW106101376A TW106101376A TW201733066A TW 201733066 A TW201733066 A TW 201733066A TW 106101376 A TW106101376 A TW 106101376A TW 106101376 A TW106101376 A TW 106101376A TW 201733066 A TW201733066 A TW 201733066A
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- 239000000758 substrate Substances 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 69
- 230000008021 deposition Effects 0.000 claims abstract description 58
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052802 copper Inorganic materials 0.000 claims abstract description 45
- 239000010949 copper Substances 0.000 claims abstract description 45
- 238000002347 injection Methods 0.000 claims abstract description 31
- 239000007924 injection Substances 0.000 claims abstract description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 26
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 25
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000007789 gas Substances 0.000 claims abstract description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000002243 precursor Substances 0.000 claims abstract description 11
- 239000010936 titanium Substances 0.000 claims abstract description 11
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 11
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000013626 chemical specie Substances 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 8
- 239000005751 Copper oxide Substances 0.000 claims description 8
- 229910000431 copper oxide Inorganic materials 0.000 claims description 8
- 239000012071 phase Substances 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- 238000004070 electrodeposition Methods 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims 1
- 230000037361 pathway Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 17
- 238000011109 contamination Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C25D3/00—Electroplating: Baths therefor
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- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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Abstract
本發明關於製造包含穿過基板(1)延伸之通孔(V)之互連的方法,其依序包含:(a)將氮化鈦或氮化鉭層(11)沉積在基板的主要表面(1A)上,以及在延伸到該基板的至少部分厚度裡之至少一孔洞(10)的內表面(10A、10B)上,(b)將銅層(12)沉積在該氮化鈦或氮化鉭層(11)上,(c)以銅來填充孔洞(10),該方法的特徵在於:在步驟(a)期間,基板(1)安排於第一沉積腔室(100)中;以及特徵在於:該步驟(a)包含根據第一序列脈衝、經由第一注射途徑而將氣相鈦或鉭前驅物注射到沉積腔室裡,以及包含以第二序列脈衝、經由不同於第一注射途徑的第二注射途徑而將氮基反應性氣體注射到沉積腔室裡,而第一序列脈衝和第二序列脈衝不同相。
Description
本發明關於製造包含穿過基板延伸之通孔之互連的方法。
為了生產積體電路,已知在例如矽做的基板裡製造穿矽通孔(through-silicon via,TSV),而打算藉由其二個主面來電連接到電子構件。
此種互連的製造典型而言包含:在基板的厚度中形成孔洞(一般而言為盲孔),將氮化鈦或氮化鉭層沉積在基板的主要表面上和在孔洞的內表面上,將銅層沉積在氮化鈦層上,以便開始以下步驟,以銅填充孔洞,在相反於上面沉積了氮化鈦或氮化鉭層和銅層的主面來移除部分基板,直到暴露出孔洞的裡面為止,因此使通孔成為貫穿通孔。
氮化鈦或氮化鉭層具有阻障功能,其打算避免銅擴散到基板裡。
為了允許有穿過通孔的良好導電度,沉積層必須是順服的並且有良好品質。「順服層」(compliant layer)意謂該層的厚度在垂直於上面沉積它之表面的方向上來測量是恆定的。換言之,該層的表面乃平行於上面
沉積它的表面。
雖然使用原子層沉積(atomic layer deposition,ALD)技術來接續沉積單一原子層可以獲得完美的順服性,但是這沉積比較緩慢,以致沉積厚度從100到200奈米的一層需要幾個小時,因而尤其昂貴。
雖然物理氣相沉積(physical vapour deposition,PVD)比較快、因此較不昂貴,但是無法達成如此良好的順服性。
現在,於具有大形式因素(深度/寬度比例)之孔洞的情形,亦即形式因素大於或等於5:1,或甚至大於或等於10:1,沉積的低順服性以致必須沉積顯著厚度的材料在基板的主要表面上,以便設法在孔洞的底部獲得足夠的厚度。然後必須藉由化學機械拋光(chemical mechanical polishing,CMP)而從表面移除至少部分的這過多厚度材料,這增加成本和步驟的持續時間,並且引起拋光表面的汙染問題而需要後續清潔。
最後,雖然化學氣相沉積(chemical vapour deposition,CVD)比PVD方法達成更好的順服性,但是具有引入汙染物(尤其是碳)的缺點,這降低了形成層的品質。
現在,通孔的製造須沉積良好品質層,亦即尤其是沒有雜質,如此以使隨著時間而損傷通孔之銅電遷移的效應出現減到最少。
本發明的目的是設計製造包含穿過基板延伸之通孔之互連的方法,其有可能避免前述問題,並且尤其有可能改善沉積層的順服性而避免沉積出後續要從基板主要表面移除之過多厚度的材料。本發明的進一步目的也是要生產隨著時間而具有增加可靠性的互連。
根據本發明,提出的是製造包含穿過基板延伸之通孔之互連的方法,其依序包含:(a)將氮化鈦或氮化鉭層沉積在基板的主要表面上,以及在延伸到該基板的至少部分厚度之至少一孔洞的內表面上,(b)將銅層沉積在該氮化鈦或氮化鉭層上,(c)以銅來填充孔洞,該方法的特徵在於:在步驟(a)期間,基板安排於第一沉積腔室中;以及特徵在於:該步驟(a)包含根據第一序列脈衝、經由第一注射途徑而將氣相鈦或鉭前驅物注射到沉積腔室裡,以及包含以第二序列脈衝、經由不同於第一注射途徑的第二注射途徑而將氮基反應性氣體注射到沉積腔室裡,而第一序列脈衝和第二序列脈衝不同相。
由於依序脈衝式實施的結果,氮化鈦或氮化鉭層的沉積允許有比習用之CVD方法還快速的化學反應以及更好的順服性。再者,它促進基板表面上的反應,因此限制了該表面由於不想要的反應所導致的任何汙染。
「寬度」(width)意謂孔洞在基板主要表面所形成之平面上的最小維度。於本文中,「孔洞」(hole)一詞表示做在基板主要表面中之任何形狀的洞,舉例而言包含長度大於寬度的溝槽,或者也包含(但非限制性的)圓孔(於這後面的情形,寬度對應於孔洞的直徑)。
根據該方法的其他有利特徵,以下單獨或組合:填充孔洞的步驟(c)是以銅的電沉積來實施;填充孔洞是藉由繼續步驟(b)所進行的銅沉積而進行;
步驟(a)所沉積之氮化鈦或氮化鉭層的厚度小於或等於100奈米;步驟(b)所沉積之銅層的厚度介於50和300奈米之間;步驟(b)的銅層沉積是在不同於第一腔室的第二沉積腔室中進行;步驟(b)是以化學氣相沉積來實施;第一和第二沉積腔室以密封方式而分開連接到中間腔室,並且在步驟(a)和(b)之間,基板在真空下從第一腔室穿過中間腔室而轉移到第二腔室;通孔具有大於或等於5:1的形式因素;在填充孔洞之後,方法包含在相反於上面沉積了氮化鈦或氮化鉭層的主要表面來移除至少部分厚度的基板,如此以暴露孔洞的裡面,如此以使該通孔成為貫穿通孔;在步驟(a)之後,方法包含清潔當中沉積氮化鈦或氮化鉭層的腔室,以便移除沉積在該腔室之內壁上的該氮化鈦或氮化鉭,該清潔是以氟所組成的反應性氣體並且被電漿來源活化而進行;在步驟(b)之後,方法包含清潔當中沉積銅層的腔室,以便移除沉積在該腔室之內壁上的該銅,該清潔包含以下步驟:(i)將銅氧化;(ii)以序列脈衝來注射能夠揮發該氧化銅的化學物種,該步驟(ii)在步驟(i)之後才開始。
另一主題關於實施前述方法的裝置。該裝置的特徵在於它包含:第一密封沉積腔室,其經由第一注射途徑而連接到鈦或鉭前驅物的來源,以及經由不同於第一途徑的第二注射途徑而連接到氮基反應性氣體的
來源。
第二密封沉積腔室,其連接到銅的來源;以及中間腔室,而第一和第二沉積腔室以密封方式分開連接於此。
圖1A到1E顯示形成互連的接續步驟。
參考圖1A,在所供應的基板1當中已經從基板的主要表面1A形成至少一孔洞10。基板可以是任何能夠產生電子電路的基板。基板可以是實心的(亦即由單一材料所組成)或複合的(亦即堆疊不同的材料所組成)。舉例而言(但非限制性的),基板可以是矽基板。
一般而言,孔洞不是貫穿孔,亦即其深度小於基板的厚度。
有利而言,孔洞具有大於或等於5:1、較佳而言大於10:1的形式因素。然而,本發明可以不管孔洞的形式因素而實施。
首先,氮化鈦(TiN)或氮化鉭(TaN)的順服層11沉積在基板的主要表面1A、孔洞的側壁10A、孔洞的底部10B上。
該沉積是藉由脈衝式化學氣相沉積而進行。
更特定而言,基板被引入第一密封沉積腔室(圖2標為100),
其包含二個不同的注射途徑:第一途徑有可能將腔室連接到鈦或鉭前驅物的來源,並且第二途徑有可能將腔室連接到氮基反應性氣體的來源。「氮基」(nitrogen-based)意謂該反應性氣體包括佔多數的氮,但它可以可選用而言包括其他物種,例如氫。
根據有利的具體態樣,第一注射途徑包含多個第一通道,鈦或鉭前驅物經由此而注射到沉積腔室裡;並且第二注射途徑包含多個第二通道,氮基反應性氣體經由此而注射到沉積腔室裡;該等通道都開放到沉積腔室裡而相反於基板的表面。
如本身所知,基板設立在中沉積腔室而在基板托具上,該托具可選用而言包含將基板加熱到有利於沉積之溫度的系統。
沉積包含:根據第一序列脈衝、經由第一注射途徑而將氣相的該鈦或鉭前驅物注射到沉積腔室裡,以及以第二序列脈衝、經由不同於第一注射途徑的第二注射途徑而將氮基反應性氣體注射到沉積腔室裡,而第一序列脈衝和第二序列脈衝不同相。
「序列脈衝」(sequence of pulses)意謂每個序列最少有一個脈衝。這方法稱為脈衝式CVD。針對不同於本發明所設想的應用和材料,此種方法已經描述於世界專利公告案第2015/140261號。
根據具體態樣,例如世界專利公告案第2015/140261號所述:第一序列脈衝之脈衝的持續時間介於0.02秒和5秒之間;第一序列脈衝的二脈衝之間的延遲介於0.5秒和10秒之間;第二序列脈衝之脈衝的持續時間介於0.02秒和5秒之間;第二序列脈衝的二脈衝之間的延遲介於0.5秒和10秒之間。
根據其他具體態樣:第一序列脈衝之脈衝的持續時間獨立於第二序列脈衝而介於0.02秒和5秒之間;第一序列脈衝的二脈衝之間的延遲獨立於第二序列脈衝而介於0.02秒和10秒之間。
根據其他具體態樣:第一序列脈衝之脈衝的持續時間獨立於第二序列脈衝而介於0.02秒和1秒之間;第一序列脈衝的二脈衝之間的延遲獨立於第二序列脈衝而介於0.02秒和1秒之間。
根據其他具體態樣:第一序列脈衝之脈衝的持續時間獨立於第二序列脈衝而介於1秒和5秒之間;第一序列脈衝的二脈衝之間的延遲獨立於第二序列脈衝而介於1秒和10秒之間。
注射到腔室裡之物種的傳送時間是由該物種行進介於個別注射途徑出口和基板自由表面當中之距離所需的時間而定義。不同物種的注射是以適合的序列來進行,如此則該等物種之間的反應基本上發生在基板的自由表面上。
有利而言,用於加熱基板托具的系統將基板加熱到的溫度乃大於物種注射到腔室裡的溫度。由於物種之間的反應速度隨著溫度而增加,該反應速度在基板的自由表面上因而較大。
第一序列脈衝和第二序列脈衝不同相,亦即在沉積程序期間,僅鈦或鉭前驅物注射到沉積腔室裡以及僅氮基反應性氣體注射到反應腔室裡是接續的時期。可選用而言,也可以有實施同時注射的時期,以及/或者沒有發生注射的時期。
再者,沉積腔室中的壓力在方法的持續時間始終大於預先決定的數值,而不像原子層沉積(ALD)技術。事實上,ALD的沉積包含一次注射單一類型的物種,並且在注射其他類型的物種之前須完全清洩腔室。於本發明的情形,有可能省卻減慢在基板上沉積諸層之速度的複雜泵動系統和清洩步驟。舉例而言,沉積腔室中的壓力大於500毫托耳,較佳而言大於1托耳。
使用此方法,相較化學氣相沉積(CVD)技術而言,則有可能維持在基板表面上沉積一層之速度的優點。再者,相對於習用的氣相沉積技術,大大改善了沉積層的順服性。再者,這方法促進基板表面上的鉭或鈦前驅物與氮基反應性氣體之間的反應,因此限制了可能劣化形成在基板表面上之層性質所不想要的反應和汙染。
因此形成了氮化鈦或氮化鉭的順服層11,該層有利而言具有小於或等於100奈米的厚度。該層滿足了對於用來填充孔洞的銅擴散到基板造成阻障的功能。
參考圖1B,其次在層11上形成銅順服層12,其厚度一般而言介於50和300奈米。
為此,被層11所覆蓋的基板1有利而言移動到不同於第一腔室並且與之隔離的第二沉積腔室(圖2標為200)。較佳而言,該移動的進
行並不將基板通氣到大氣壓,這避免任何汙染或氧化。事實上,沉積層的汙染或氧化有可能減少該層的附著並且在包含通孔之裝置的操作期間促進銅的電遷移。
層12的沉積可以用任何適合的技術來實施。有利而言,該沉積是以化學氣相沉積來進行,而有或無脈衝化。
參考圖1C,孔洞10以銅來填充。如果孔洞具有小於1微米的寬度,則該填充可以藉由繼續前面步驟所進行的銅沉積而進行。替代選擇而言,尤其如果孔洞具有大於1微米的寬度,則填充孔洞可以藉由電沉積來進行,這技術要比化學氣相沉積更快速而較不昂貴。
參考圖1D,藉由移除基板相反於主要表面1A的至少部分厚度1B,而使因此形成的通孔V成為貫穿通孔。這移除舉例而言可以藉由拋光來進行,尤其藉由化學機械拋光(CMP)來為之。
參考圖1E,基板的主要表面1A之至少部分的氮化鉭或氮化鈦層和銅層是以化學機械拋光所移除。
圖1D和1E所示的步驟順序可以可選用而言倒轉過來。
根據本發明的具體態樣,一旦已經從腔室移除基板,腔室100和/或腔室200可以在沉積步驟之後加以清潔。
至於第一沉積腔室100,該清潔的有利進行是:將氟所組成的反應性氣體注射到腔室裡,並且以位在現場或遠離腔室的電漿來源來活化該氣體。
至於第二沉積腔室200,該清潔包含以下步驟:(i)將銅氧化;
(ii)以序列脈衝來注射能夠揮發該氧化銅的化學物種,該步驟(ii)在步驟(i)開始之後才開始,並且是在步驟(i)結束之後或在部分的步驟(i)期間來發生。換言之,步驟(ii)的第一脈衝是在步驟(i)開始之後才實施,而不管該步驟是否已經完成。
步驟(i)可以藉由注射包含以下至少一物種的氧化物種而進行:氧、臭氧、氧化亞氮。該氧化物種可以在清潔過程的整個持續時間始終持續的注射。
於銅的情形,用於揮發氧化銅的化學物種包含六氟乙醯丙酮(hfacH)。然而,能夠揮發氧化之金屬沉積物的該化學物種也或許可以與銅沉積物反應,因而鈍化該沉積物的暴露表面。金屬沉積物2的這鈍化反應是不想要的反應,其限制或阻礙了氧化物種對該沉積物做的任何氧化反應。為了避免這不想要的反應,能夠揮發氧化銅沉積物的化學物種是以序列脈衝而在步驟(ii)中注射。腔室200可以維持在介於20和250℃的溫度,如此以將能夠揮發銅沉積物的化學物種維持於氣態形式。較佳而言,腔室200的溫度維持在介於20和150℃的溫度,更佳而言在20和100℃之間。腔室200中的壓力維持在1.0和10托耳之間,或者優選而言在1和5托耳之間。
根據具體態樣:能夠揮發氧化的金屬沉積物之化學物種的一或多個脈衝之注射持續時間介於0.02秒和5秒之間,並且二接連脈衝(如果適用的話)之間的延遲介於0.02秒和10秒之間;能夠揮發氧化的金屬沉積物之化學物種的一或多個脈衝之注射持續時
間介於0.02秒和1秒之間,並且二接連脈衝(如果適用的話)之間的延遲介於0.02秒和1秒之間;能夠揮發氧化的金屬沉積物之化學物種的一或多個脈衝之注射持續時間介於1秒和5秒之間,並且二接連脈衝(如果適用的話)之間的延遲介於1秒和10秒之間。
有利而言,序列脈衝的脈衝持續時間乃設定成使得銅的氧化層不完全揮發。因此,氧化銅層的剩餘部分形成對於步驟(ii)所注射之化學物種進行之金屬沉積物鈍化的阻障。因此阻擋了鈍化反應。換言之,在注射用於揮發氧化的金屬沉積物之化學物種的過程中,在二接續脈衝之中的第二脈衝期間,相對於該等二接續脈衝之間的氧化金屬沉積量而言,化學物種是以次化學計量的量來注射。前述次化學計量的量可以由以下知識所共同決定:在步驟(ii)之序列脈衝的二脈衝之間,步驟(i)所氧化之銅沉積物的量;以及該氧化銅沉積物與化學物種之揮發反應的機制。
注射能夠揮發氧化銅之化學物種的方法因而具有許多優點。第一優點是達成有效的清潔程序。事實上,因此中和了不想要的反應,包含銅沉積物被注射的化學物種所鈍化。中和該不想要的反應則避免需要開啟腔室200並且訴諸去除其汙染的過程。第二優點是能夠控制步驟(ii)所注射之化學物種的量,因此有可能減少清潔程序的成本。
這清潔則有可能使顆粒沉積在基板1之表面上的風險減到最少,因此改善沉積層的品質。這也有可能增加在腔室以化學浴液來清潔之前所可以沉積的層數。
由於上述多樣措施的結果,氮化鈦或氮化鉭層和銅層不僅在
縮減的時程內(40奈米層典型而言在2分鐘的等級)便形成有良好的順服性,而且也具有較好的品質,這使銅後續電遷移的風險減到最少。因此,該互連尤其在長時間要比既有的互連更可靠。
現在將描述裝置的範例,其允許根據上述方法來形成通孔。
參考圖2,該裝置包含:第一密封沉積腔室100,其能夠置於真空下,而藉由第一注射途徑來連接到鈦或鉭前驅物的來源(未顯示),並且藉由第二注射途徑而連接到氮基反應性氣體的來源(未顯示);以及第二密封沉積腔室200,其連接到銅的來源(未顯示)。
裝置也包含入口/出口氣塞400,而經由此以引入上面要形成氮化鉭或銅層的基板,以及移除上面已經形成該層的基板。
該入口/出口氣塞400開放到密封的中間腔室300裡,後者能夠分開連通於第一沉積腔室100和第二沉積腔室200。用於操持和運輸基板的系統(未顯示)安排在該裝置裡,以便允許基板從一腔室移動到另一腔室。
腔室300中的氣氛受到控制,如此以避免在不同腔室之間轉移的基板有任何汙染。
因此,在形成氮化鉭或氮化鈦層的過程中,基板在中間腔室300、沉積腔室100、沉積腔室200之間移動,而該等腔室在實施方法步驟的期間彼此流體隔離。因此,避免腔室有任何互相汙染,這汙染或可產生難以從腔室之內壁清理掉的沉積物。
本發明的其他特徵和優點將從下面參考所附圖式的【實施方式】而變得明顯,其中:圖1A到1E顯示根據本發明的具體態樣之方法的不同步驟,圖2是實施該方法之裝置的示意圖解。
為了讓圖易讀,它們未必按照比例。
1‧‧‧基板
10‧‧‧孔洞
11‧‧‧氮化鈦或氮化鉭層
12‧‧‧銅層
Claims (14)
- 一種製造包含穿過基板(1)延伸之通孔(V)之互連的方法,其依序包含:(a)將氮化鈦或氮化鉭層(11)沉積在該基板的主要表面(1A)上,以及在延伸到該基板的至少部分厚度之至少一孔洞(10)的內表面(10A、10B)上,(b)將銅層(12)沉積在該氮化鈦或氮化鉭層(11)上,(c)以銅來填充該孔洞(10),該方法的特徵在於:在步驟(a)期間,該基板(1)安排於第一沉積腔室(100)中;並且特徵在於:該步驟(a)包含根據第一序列脈衝、經由第一注射途徑而將氣相鈦或鉭前驅物注射到該沉積腔室裡,以及包含以第二序列脈衝、經由不同於該第一注射途徑的第二注射途徑而將氮基反應性氣體注射到該沉積腔室裡,該第一序列脈衝和該第二序列脈衝不同相,該第一沉積腔室(100)中的壓力在步驟(a)的整個持續時間始終大於500毫托耳。
- 根據申請專利範圍第1項的方法,其特徵在於:該第一序列脈衝之脈衝的持續時間獨立於該第二序列脈衝而介於0.02秒和5秒之間;並且該第一序列脈衝的二脈衝之間的延遲獨立於該第二序列脈衝而介於0.02秒和10秒之間,或在0.5秒和10秒之間。
- 根據申請專利範圍第1或2項的方法,其特徵在於:填充該孔洞(10)的步驟(c)是以銅的電沉積來實施。
- 根據申請專利範圍第1或2項的方法,其特徵在於:填充該孔洞(10)是藉由繼續步驟(b)所進行的銅沉積而進行。
- 根據前面申請專利範圍之中一項的方法,其特徵在於:步驟(a)所沉 積之該氮化鈦或氮化鉭層(11)的厚度小於或等於100奈米。
- 根據前面申請專利範圍之中一項的方法,其特徵在於:步驟(b)所沉積之該銅層(12)的厚度介於50和300奈米之間。
- 根據前面申請專利範圍之中一項的方法,其特徵在於:步驟(b)的該銅層(12)沉積是在不同於該第一腔室(100)的第二沉積腔室(200)中進行。
- 根據申請專利範圍第7項的方法,其特徵在於:步驟(b)是以化學氣相沉積來實施。
- 根據申請專利範圍第7或8項之中一項的方法,其特徵在於:該等第一和第二沉積腔室(100,200)以密封方式而分開連接到中間腔室(300);並且特徵在於:在步驟(a)和(b)之間,該基板在真空下從該第一腔室(100)穿過該中間腔室(300)而轉移到該第二腔室(200)。
- 根據前面申請專利範圍之中一項的方法,其特徵在於:該通孔(V)具有大於或等於5:1的形式因素。
- 根據前面申請專利範圍之中一項的方法,其特徵在於:在填充該孔洞(10)之後,它包含在相反於上面已經沉積了該氮化鈦或氮化鉭層和該銅層的該主要表面(1A)來移除該基板(1)的至少部分厚度(1B),如此以暴露該通孔(V)的裡面,如此以使該通孔成為貫穿通孔。
- 根據前面申請專利範圍之中一項的方法,其特徵在於:在步驟(a)之後,它包含清潔當中沉積該氮化鈦或氮化鉭層(10)的該腔室(100),以便移除沉積在該腔室之內壁上的該氮化鈦或氮化鉭,該清潔是以氟所組成的反應性氣體並且被電漿來源活化而進行。
- 根據前面申請專利範圍之中一項的方法,其特徵在於:在步驟(b)之 後,它包含清潔當中沉積該銅層(11)的該腔室(200),以便移除沉積在該腔室之內壁上的該銅,該清潔包含以下步驟:(i)將該銅氧化;(ii)以序列脈衝來注射能夠揮發該氧化銅的化學物種,該步驟(ii)在步驟(i)開始之後才開始。
- 一種實施根據申請專利範圍第1到13項之中一項方法的裝置,其特徵在於它包含:第一密封沉積腔室(100),其經由第一注射途徑而連接到鈦或鉭前驅物的來源,以及經由不同於該第一途徑的第二注射途徑而連接到氮基反應性氣體的來源。 第二密封沉積腔室(200),其連接到銅的來源;以及中間腔室(300),而該第一和該第二沉積腔室(100、200)以密封方式分開連接於此。
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