FR3046878A1 - Procede de fabrication d'une interconnexion comprenant un via s'etendant au travers d'un substrat - Google Patents
Procede de fabrication d'une interconnexion comprenant un via s'etendant au travers d'un substrat Download PDFInfo
- Publication number
- FR3046878A1 FR3046878A1 FR1650408A FR1650408A FR3046878A1 FR 3046878 A1 FR3046878 A1 FR 3046878A1 FR 1650408 A FR1650408 A FR 1650408A FR 1650408 A FR1650408 A FR 1650408A FR 3046878 A1 FR3046878 A1 FR 3046878A1
- Authority
- FR
- France
- Prior art keywords
- chamber
- copper
- substrate
- deposition
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 67
- 230000008021 deposition Effects 0.000 claims abstract description 61
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052802 copper Inorganic materials 0.000 claims abstract description 54
- 239000010949 copper Substances 0.000 claims abstract description 54
- 238000002347 injection Methods 0.000 claims abstract description 32
- 239000007924 injection Substances 0.000 claims abstract description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 26
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 claims abstract description 21
- 239000007789 gas Substances 0.000 claims abstract description 20
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 19
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 19
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims abstract description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000010936 titanium Substances 0.000 claims abstract description 15
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- 239000002243 precursor Substances 0.000 claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims description 16
- 239000013626 chemical specie Substances 0.000 claims description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 16
- 238000011109 contamination Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- QAMFBRUWYYMMGJ-UHFFFAOYSA-N hexafluoroacetylacetone Chemical compound FC(F)(F)C(=O)CC(=O)C(F)(F)F QAMFBRUWYYMMGJ-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
- H01L21/76852—Barrier, adhesion or liner layers the layer covering a conductive structure the layer also covering the sidewalls of the conductive structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7687—Thin films associated with contacts of capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (13)
- REVENDICATIONS1. Procédé de fabrication d’une interconnexion comprenant un via (V) s’étendant au travers d’un substrat (1), comprenant successivement : (a) le dépôt d’une couche (11) de nitrure de titane ou de nitrure de tantale sur une surface principale (1A) du substrat et sur la surface intérieure (10A, 10B) d’au moins un trou (10) s’étendant dans au moins une partie de l’épaisseur dudit substrat, (b) le dépôt d’une couche (12) de cuivre sur ladite couche (11) de nitrure de titane ou de nitrure de tantale, (c) le remplissage du trou (10) par du cuivre, ledit procédé étant caractérisé en ce que pendant l’étape (a) le substrat (1) est agencé dans une première chambre de dépôt (100) et en ce que ladite étape (a) comprend l’injection d’un précurseur de titane ou de tantale en phase gazeuse dans la chambre de dépôt par une première voie d’injection selon une première séquence d’impulsions et l’injection d’un gaz réactif à base d’azote dans la chambre de dépôt par une seconde voie d’injection distincte de la première voie d’injection selon une seconde séquence d’impulsions, la première séquence d’impulsions et la seconde séquence d’impulsions étant déphasées.
- 2. Procédé selon la revendication 1, caractérisé en ce que l’étape (c) de remplissage du trou (10) est mise en œuvre par électrodéposition de cuivre.
- 3. Procédé selon la revendication 1, caractérisé en ce que le remplissage du trou (10) est réalisé en poursuivant le dépôt de cuivre réalisé à l’étape (b).
- 4. Procédé selon l’une des revendications 1 à 3, caractérisé en ce que l’épaisseur de la couche (11) de nitrure de titane ou de nitrure de tantale déposée à l’étape (a) est inférieure ou égale à 100 nm.
- 5. Procédé selon l’une des revendications 1 à 4, caractérisé en ce que l’épaisseur de la couche (12) de cuivre déposée à l’étape (b) est comprise entre 50 et 300 nm.
- 6. Procédé selon l’une des revendications 1 à 5, caractérisé en ce que le dépôt de la couche (12) de cuivre à l’étape (b) est réalisé dans une seconde chambre de dépôt (200) différente de la première chambre (100).
- 7. Procédé selon la revendication 6, caractérisé en ce que l’étape (b) est mise en œuvre par dépôt chimique en phase vapeur.
- 8. Procédé selon l’une des revendications 6 ou 7, caractérisé en ce que la première et la seconde chambre de dépôt (100, 200) sont connectées séparément de manière étanche à une chambre intermédiaire (300) et en ce qu’entre les étapes (a) et (b), le substrat est transféré de la première chambre (100) à la seconde chambre (200) par la chambre intermédiaire (300) sous vide d’air.
- 9. Procédé selon l’une des revendications 1 à 8, caractérisé en ce que le via (V) présente un facteur de forme supérieur ou égal à 5 : 1.
- 10. Procédé selon l’une des revendications 1 à 9, caractérisé en ce qu’il comprend, après le remplissage du trou (10), l’enlèvement d’au moins une partie (1B) de l’épaisseur du substrat (1) opposée à la surface principale (1A) sur laquelle la couche de nitrure de titane ou de nitrure de tantale et la couche de cuivre ont été déposées de sorte à exposer l’intérieur du via (V) de sorte à rendre ledit via traversant.
- 11. Procédé selon l’une des revendications 1 à 10, caractérisé en ce qu’après l’étape (a), il comprend un nettoyage de la chambre (100) dans laquelle la couche (10) de nitrure de titane ou de nitrure de tantale a été déposée pour éliminer ledit nitrure de titane ou nitrure de tantale déposé sur une paroi intérieure de ladite chambre, ledit nettoyage étant effectué avec un gaz réactif composé de fluor et activé par une source plasma.
- 12. Procédé selon l’une des revendications 1 à 11, caractérisé en ce qu’après l’étape (b), il comprend un nettoyage de la chambre (200) dans laquelle la couche (11) de cuivre a été déposée pour éliminer ledit cuivre déposé sur une paroi intérieure de ladite chambre, ledit nettoyage comprenant les étapes suivantes : (i) oxydation du cuivre ; (ii) injection, selon une séquence d’impulsions, d’espèces chimiques adaptées pour volatiliser ledit cuivre oxydé, ladite étape (ii) débutant après le début de l’étape (i).
- 13. Dispositif pour la mise en œuvre d’un procédé selon l’une des revendications 1 à 12, caractérisé en ce qu’il comprend : - une première chambre de dépôt (100) étanche connectée à une source d’un précurseur de titane ou de tantale par une première voie d’injection et à une source d’un gaz réactif à base d’azote par une seconde voie d’injection distincte de la première voie, - une seconde chambre de dépôt (200) étanche connectée à une source de cuivre et - une chambre intermédiaire (300) à laquelle sont connectées séparément de manière étanche la première et la seconde chambre de dépôt (100, 200).
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1650408A FR3046878B1 (fr) | 2016-01-19 | 2016-01-19 | Procede de fabrication d'une interconnexion comprenant un via s'etendant au travers d'un substrat |
KR1020187023627A KR20180118627A (ko) | 2016-01-19 | 2017-01-16 | 기판을 통해 연장된 비아를 포함하는 인터커넥션을 제조하는 방법 |
TW106101376A TW201733066A (zh) | 2016-01-19 | 2017-01-16 | 製造包含穿過基板延伸之通孔之互連的方法 |
CN201780007371.4A CN108475660A (zh) | 2016-01-19 | 2017-01-16 | 用于制造包括贯穿基板延伸的导电孔的互连部的方法 |
EP17701653.2A EP3405974A1 (fr) | 2016-01-19 | 2017-01-16 | Procede de fabrication d'une interconnexion comprenant un via s' etendant au travers d'un substrat |
PCT/EP2017/050761 WO2017125336A1 (fr) | 2016-01-19 | 2017-01-16 | Procede de fabrication d'une interconnexion comprenant un via s' etendant au travers d'un substrat |
US16/070,506 US11114340B2 (en) | 2016-01-19 | 2017-01-16 | Method for producing an interconnection comprising a via extending through a substrate |
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FR1650408 | 2016-01-19 | ||
FR1650408A FR3046878B1 (fr) | 2016-01-19 | 2016-01-19 | Procede de fabrication d'une interconnexion comprenant un via s'etendant au travers d'un substrat |
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FR3046878A1 true FR3046878A1 (fr) | 2017-07-21 |
FR3046878B1 FR3046878B1 (fr) | 2018-05-18 |
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FR1650408A Active FR3046878B1 (fr) | 2016-01-19 | 2016-01-19 | Procede de fabrication d'une interconnexion comprenant un via s'etendant au travers d'un substrat |
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Country | Link |
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US (1) | US11114340B2 (fr) |
EP (1) | EP3405974A1 (fr) |
KR (1) | KR20180118627A (fr) |
CN (1) | CN108475660A (fr) |
FR (1) | FR3046878B1 (fr) |
TW (1) | TW201733066A (fr) |
WO (1) | WO2017125336A1 (fr) |
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KR102619482B1 (ko) * | 2019-10-25 | 2024-01-02 | 에이에스엠 아이피 홀딩 비.브이. | 막 증착 공정에서의 정상 펄스 프로파일의 변형 |
Citations (5)
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US20010034123A1 (en) * | 2000-04-20 | 2001-10-25 | In-Sang Jeon | Method of manufacturing a barrier metal layer using atomic layer deposition |
WO2003008663A1 (fr) * | 2001-07-16 | 2003-01-30 | Applied Materials, Inc. | Formation de films de nitrure de titane au moyen d'un processus de depot cyclique |
US20060019495A1 (en) * | 2004-07-20 | 2006-01-26 | Applied Materials, Inc. | Atomic layer deposition of tantalum-containing materials using the tantalum precursor taimata |
US20080242078A1 (en) * | 2007-03-30 | 2008-10-02 | Asm Nutool, Inc. | Process of filling deep vias for 3-d integration of substrates |
WO2009042713A1 (fr) * | 2007-09-28 | 2009-04-02 | Applied Materials, Inc. | Dépôt en phase vapeur de matériaux à base de tungstène |
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US5186718A (en) * | 1989-05-19 | 1993-02-16 | Applied Materials, Inc. | Staged-vacuum wafer processing system and method |
US6284052B2 (en) * | 1998-08-19 | 2001-09-04 | Sharp Laboratories Of America, Inc. | In-situ method of cleaning a metal-organic chemical vapor deposition chamber |
US8696875B2 (en) * | 1999-10-08 | 2014-04-15 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
US6916398B2 (en) * | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US6784096B2 (en) * | 2002-09-11 | 2004-08-31 | Applied Materials, Inc. | Methods and apparatus for forming barrier layers in high aspect ratio vias |
KR100667561B1 (ko) * | 2005-02-18 | 2007-01-11 | 주식회사 아이피에스 | 박막 증착 방법 |
US20100206737A1 (en) * | 2009-02-17 | 2010-08-19 | Preisser Robert F | Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv) |
US8531033B2 (en) * | 2009-09-07 | 2013-09-10 | Advanced Interconnect Materials, Llc | Contact plug structure, semiconductor device, and method for forming contact plug |
US8907457B2 (en) * | 2010-02-08 | 2014-12-09 | Micron Technology, Inc. | Microelectronic devices with through-substrate interconnects and associated methods of manufacturing |
KR20120031811A (ko) * | 2010-09-27 | 2012-04-04 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
FR3018825B1 (fr) | 2014-03-21 | 2017-09-01 | Altatech Semiconductor | Procede de depot en phase gazeuse |
-
2016
- 2016-01-19 FR FR1650408A patent/FR3046878B1/fr active Active
-
2017
- 2017-01-16 WO PCT/EP2017/050761 patent/WO2017125336A1/fr active Application Filing
- 2017-01-16 EP EP17701653.2A patent/EP3405974A1/fr not_active Withdrawn
- 2017-01-16 CN CN201780007371.4A patent/CN108475660A/zh active Pending
- 2017-01-16 US US16/070,506 patent/US11114340B2/en active Active
- 2017-01-16 TW TW106101376A patent/TW201733066A/zh unknown
- 2017-01-16 KR KR1020187023627A patent/KR20180118627A/ko not_active Application Discontinuation
Patent Citations (5)
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US20010034123A1 (en) * | 2000-04-20 | 2001-10-25 | In-Sang Jeon | Method of manufacturing a barrier metal layer using atomic layer deposition |
WO2003008663A1 (fr) * | 2001-07-16 | 2003-01-30 | Applied Materials, Inc. | Formation de films de nitrure de titane au moyen d'un processus de depot cyclique |
US20060019495A1 (en) * | 2004-07-20 | 2006-01-26 | Applied Materials, Inc. | Atomic layer deposition of tantalum-containing materials using the tantalum precursor taimata |
US20080242078A1 (en) * | 2007-03-30 | 2008-10-02 | Asm Nutool, Inc. | Process of filling deep vias for 3-d integration of substrates |
WO2009042713A1 (fr) * | 2007-09-28 | 2009-04-02 | Applied Materials, Inc. | Dépôt en phase vapeur de matériaux à base de tungstène |
Also Published As
Publication number | Publication date |
---|---|
FR3046878B1 (fr) | 2018-05-18 |
KR20180118627A (ko) | 2018-10-31 |
EP3405974A1 (fr) | 2018-11-28 |
US20210202314A1 (en) | 2021-07-01 |
US11114340B2 (en) | 2021-09-07 |
TW201733066A (zh) | 2017-09-16 |
CN108475660A (zh) | 2018-08-31 |
WO2017125336A1 (fr) | 2017-07-27 |
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