WO2000068984A1 - Procede de nettoyage d'une surface de substrat de silicium et application a la fabrication de composants electroniques integres - Google Patents
Procede de nettoyage d'une surface de substrat de silicium et application a la fabrication de composants electroniques integres Download PDFInfo
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- WO2000068984A1 WO2000068984A1 PCT/FR2000/001182 FR0001182W WO0068984A1 WO 2000068984 A1 WO2000068984 A1 WO 2000068984A1 FR 0001182 W FR0001182 W FR 0001182W WO 0068984 A1 WO0068984 A1 WO 0068984A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ions
- silicon substrate
- cleaning
- electronic components
- silicon
- Prior art date
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 58
- 239000010703 silicon Substances 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004140 cleaning Methods 0.000 title claims abstract description 24
- 150000002500 ions Chemical class 0.000 claims abstract description 77
- 230000007547 defect Effects 0.000 claims abstract description 14
- 239000002689 soil Substances 0.000 claims abstract description 9
- 230000008030 elimination Effects 0.000 claims abstract description 5
- 238000003379 elimination reaction Methods 0.000 claims abstract description 5
- 230000004907 flux Effects 0.000 claims abstract description 5
- 238000005498 polishing Methods 0.000 claims abstract description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 229910052786 argon Inorganic materials 0.000 claims description 14
- -1 Argon ions Chemical class 0.000 claims description 12
- 230000003993 interaction Effects 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 9
- 229910001882 dioxygen Inorganic materials 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 4
- 238000005984 hydrogenation reaction Methods 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- 230000007935 neutral effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 13
- 239000000539 dimer Substances 0.000 description 12
- 125000004429 atom Chemical group 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 239000003870 refractory metal Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052743 krypton Inorganic materials 0.000 description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000007737 ion beam deposition Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000009834 selective interaction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
Definitions
- the invention relates to a method for cleaning a silicon substrate surface, which can be applied to the manufacture of integrated electronic components.
- the invention relates to the field of microelectronics on silicon substrate, and more particularly to the manufacture of integrated circuits and memory with very high integration density. It applies to electronic components integrated in such circuits, such as diodes or transistors, or to memories with very high integration density.
- Monocrystalline silicon is widely used in the field of microelectronics. It comes in the form of pellets or "slices" cut from a silicon ingot. The cutting is generally carried out along the orientation c ⁇ stallographic plane 100, perpendicular to the coordinate vector 1; 0; 0, the wafer is said to be of orientation 100. After cutting, the substrate is polished and then cleaned.
- the cleaning phase aims to eliminate the stains present on the surface of the substrate, before carrying out the various stages of manufacturing integrated circuits.
- the soils are generally constituted by dielectric materials, such as silicon oxide, silicon monoxide, organic residues from cleaning products, or various silicon-based SiX compounds, X being a radical such that l , carbon, etc.
- the silicon surface can also have point structural defects which affect its flatness, that is to say its "planing” in terms of profession, such as "dimers", groups of two strongly bonded silicon atoms. between them, but less linked to the crystal mesh.
- the cleaning methods used are chemical pickling methods of the RCA type, from the name of the company which developed it. It involves immersion in a hydrofluoric acid bath and rinsing with deionized water.
- An object of the invention is to obtain a silicon surface that is completely free of contamination.
- Another object is to form a planarized silicon surface, which does not exhibit roughness.
- the present invention proposes to act by a specific remote interaction between moderately charged ions and the surface of orientation silicon 100 to be cleaned, in order to cause the ejection of soils present on the surface, such as dielectric materials, and eliminating crystal defects of the dimer type, without the ions penetrating said surface.
- moderately charged ions such as dielectric materials
- crystal defects of the dimer type without the ions penetrating said surface.
- the invention aims to provide a perfectly cleaned and planarized surface.
- the subject of the invention is a method of cleaning a surface of orientation silicon substrate 100 for the manufacture of integrated electronic components, and in which, after polishing, the cleaning is carried out under vacuum by production of a flow of moderately charged positive ions, of low energy and of predetermined density, the flux being directed towards the surface of the substrate, and by controlling the kinetic energy of the ions so that their speed is substantially zero at a predetermined distance from said surface to cause only the ejection of stains present on the surface of the substrate, and the elimination of specific crystalline defects of repulsion forces of sufficient intensity being created within these stains and these defects to obtain a thoroughly planar cleaned surface .
- the production of ions is controlled in density (number of ions per unit of surface and time) by application of an extraction voltage, and in direction by magnetic sorting according to the mass / charge ratio; the ions are selected in speed and in direction by filtering, respectively by electric field of the band pass or high pass type and by collimation, for example by a series of diaphragms;
- the ions generated are rare gas ions of uniform charge, such as Argon, in particular the ions Ar 12+ to Ar 8 Neon, or Krypton; - the density of the ions is between 10 8 and 10 15 ions / cm 2 . s.
- the method according to the invention is "planarizing" to the extent that it allows the selective ejection of soils without attacking the silicon. Indeed, once the dirt is ejected, it is the free electrons coming from the mass of silicon that will be extracted by the continuous supply of ions. Thus the cleaned surface areas, that is to say areas free of soiling, do not accumulate a charge opposite the ions and the material extraction process is never initiated. Likewise, the process is planarizing by eliminating crystal defects.
- this process is self-stopping because the interaction between ions and matter ceases, for the reasons mentioned in the previous paragraph, as soon as all the soil or all surface defects are eliminated.
- the process of the invention makes it possible to produce a thin layer of Si0 2 , which can serve as a diffusion barrier in the integrated electronic components, such as transistor or diode.
- a MOS (Metal - Oxide - Semiconductor) type transistor is in the form of a monocrystalline silicon substrate.
- This substrate comprises two heavily n + doped zones, constituting two electrodes, the source and the drain, with a thickness of the order of 1 to 3 ⁇ m. Between these electrodes, the substrate is surmounted by a grid formed in a silicon wafer with orientation 100. The lower part of the grid, in contact with the substrate, consists of a layer of refractory metal oxide, titanium or tantane, forming the gate oxide.
- the gate oxide is conventionally produced by sputtering or by ion bombardment deposition under oxidative conditions (abbreviated to IBD, initials of Ion Beam Deposition in English terminology). With a high dielectric constant, it makes it possible to increase the thickness of the insulator in order to avoid the formation of “pinholes” (pin-holes in English terminology) which cause short circuits which can destroy the transistor.
- refractory metal oxides deposited on the substrate, these oxides combine over time with monocrystalline silicon to constitute the silicide of the corresponding refractory metal. This silicide, formed just under the grid, greatly affects the performance of the component.
- the present invention proposes to prepare the silicon substrate intended to receive the oxide of refractory metals according to a preliminary cleaning step in accordance with the preceding process, followed by an interaction step. at a vacuum distance between a flux of oxidizing ions and the surface of the silicon substrate, the kinetic energy of the ions being controlled so that their speed is substantially zero at a predetermined distance from said surface, for example 10 to 20 ⁇ .
- the oxidizing ions are selected 0 + ions, directed and decelerating, and the silicon substrate is maintained at a temperature below 500 ° C, preferably between 200 and 500 ° C.
- the cleaning step according to the preceding method is completed by a step of passivation of the surface by hydrogenation using a hydrofluoric acid and ammonium ion bath.
- the passivation obtained is of the type developed by the company BELL TELEPHONE Inc., according to a known process.
- the hydrogenation step is followed by an oxidation step, by remote interaction under vacuum with moderately charged ions to cause the opening of the Si-H bonds, then filling of the open bonds with oxygen gas.
- the ions selected under vacuum are preferably moderately charged Argon ions, having a uniform charge of, for example, between Ar 4+ to Ar 8+ , and the oxidation is carried out by the introduction of oxygen gas controlled under pressure.
- the temperature of the silicon substrate is kept at a value between 200 and 500 ° C.
- other moderately charged rare gases can be used (Neon, Krypton, Xenon etc.), and the substrate is maintained under vacuum to receive the deposit of refractory oxide.
- the silicon substrate oriented along the plane 100 is first pickled to roughly rid it of the native oxide formed on its surface.
- a high vacuum reactor of the order of 10 "11 to 10 " 13 mbar, produced by known pumping means, such as ultra high vacuum.
- This reactor is equipped with an argon ion flow generator Ar 12+ , from a source such as an electron cyclotron resonance source of ECR type (Electron Cyclotron Resonance initials in English terminology).
- the source produces ions with low kinetic energy, of a few keV / q (q being the number of charges per ion), generally from 1 to 20 keV / q, 10 keV / q in the example of implementation.
- the source is regulated by the application of an extraction voltage, which is equal to 10 kV in the present case.
- the ions are controlled in direction by a sorting magnet which eliminates ions whose lateral component of speed is greater than a given value.
- Speed and direction selection means are also provided on the ion path, between the source and the silicon substrate to be treated. These means are filtering means constituted by:
- the flow collimating means in the form of a series of diaphragms of diameter on the order of a millimeter.
- the selection means also have the function of guiding the ions towards the silicon substrate.
- An electric deceleration field slows down the ions as they approach the silicon surface until they reach a speed close to or equal to zero.
- the electric field is applied by a flat capacitor coupled to a potentiometer. This application is controlled by a deceleration voltage to give each ion an energy between a few eV and 0.
- the value of the deceleration voltage regulates the distance of approach of the ions and the size of the interaction zone between the argon ions and the stains present on the surface of a suostrate of silicon.
- these soils are represented in the form of a layer 10 of S ⁇ 0 2 and of an organic material 11 of SiC, partially covering the surface 21 of a monoc ⁇ stallin silicon substrate 20.
- the intensity of the repulsion forces depends on the characteristics of the ion flow, and in particular on its charge density which can range from 10 8 to 10 15 ions / cm 2 . s.
- the ion beam has an intensity of 120 ⁇ A and a section of 1 cm 2 ; the density of incident ions is 6.10 13 ⁇ ons / cm 2 .s;
- the temperature is taken equal to 300 ° C.
- agglomerates of material 14 are expelled from organic material 11 when Argon ions 30 approach this type of soiling.
- Argon ions 30 arrive near an area of the silicon surface 21 free of stains, such as area 21a, these ions will extract electrons 31 which are pumped from the depths of the silicon substrate 20, which avoids the presence of charges capable of extracting silicon agglomerates from the surface of the substrate.
- the process is very self-stopping because the charged ions cause the expulsion of the stains as long as they are present on the surface of the silicon substrate, but the expulsion of material stops as soon as the stains have been removed.
- the ejected agglomerates, positively charged are attracted by an electrostatic screen.
- the measurement of the charge of this screen makes it possible to detect, when this charge becomes constant, the end of the action of the ions and therefore of the cleaning.
- a mother 40 is in the form of two silicon atoms, 41 and 42, linked together.
- Each atom of the dimer is also linked to two silicon atoms, respectively references 51, 53 and 52, 54, these four atoms being located at the consecutive vertices of a rectangle.
- the bonds between each atom of the dimer and the atoms of the rectangle form a triangle oriented towards the center of the rectangle, the dimer 41-42 overhanging the plane P in which the four atoms are arranged 51 to 54. This overhang constitutes a defect in the plane 100 crystal mesh which results in a surface irregularity, which harms the hovering thereof.
- Such a dimer exhibits structural instability because each atom of the dimer is linked to only three atoms.
- the atoms 41 and 42 therefore have pendant bonds 61, 62 which form open bonds, in the opposite direction to that of all of the bonds formed by the dimer with the atoms 51 to 54 of the crystal lattice.
- the bonds of the latter with the crystal lattice are weakened and then open: the dimer 41-42 is then expelled from the crystalline plane 100 of the silicon substrate.
- An example of application of the process of the invention is the obtaining of a thin layer of rigorous planing S ⁇ 0 2 on a silicon substrate of integrated electronic components.
- This layer of S ⁇ 0 2 can be used in particular of diffusion barrier of refractory metal oxides.
- the surface of the silicon substrate is first carefully prepared according to a cleaning step in accordance with the preceding process in a reactor equipped with an ECR generator.
- this surface is then subjected to a remote interaction under vacuum between a flow of oxidizing ions, 0 + ions in this case, and the surface of the silicon substrate.
- Argon gas is then replaced by Oxygen gas and the reactor configuration parameters are reset to values adapted by those skilled in the art: - close the Argon valve and open that of oxygen ;
- the 0 + ions are selected in speed and directed towards the silicon substrate by magnetic filtering using a reflex filter. Then the ions are decelerated by applying a deceleration voltage until reaching a speed zero or close to zero at a given distance from the surface, equal to about 10 to 20 ⁇ .
- the silicon substrate is maintained at a temperature below 500 ° C, equal to 300 ° C in the present case.
- the growth rate of the Si0 2 layer formed tends asymptotically to zero. Control of the oxide thickness is thus facilitated.
- the cleaning step is completed by a passivation step of the surface by hydrogenation using a bath of hydrofluoric acid and ammonium ions.
- the passivation obtained is of the type developed by the company BELL TELEPHONE Inc., according to a known process.
- the silicon surface is then covered with a single layer of hydrogen forming SiH bonds with the silicon surface.
- these bonds are opened by interaction with moderately charged Argon ions, Ar 4+ to Ar 8+ , Ar 8+ in the example, then filled by adding oxygen gas.
- the remote interaction with the Argon ions is implemented in a similar manner to that previously carried out for cleaning. Oxidation is done by introducing pressure-controlled oxygen gas, of the order of 10 " ⁇ Torr in the present case.
- the silicon substrate In order to promote the opening of the SiH bonds and the oxidation, it is also planned to maintain the silicon substrate at a temperature between 200 and 500 ° C., 300 ° C. in the exemplary embodiment.
- This embodiment is self-stopping because the thickness of the oxidized layer is predetermined and homogeneous due to the formation of this layer on the pendant bonds of the hydrogen monolayer formed in the previous step on a large planing surface. .
- the oxidized silicon substrate according to one or other of the preceding examples is conveyed under vacuum to receive such a deposition in another reaction chamber.
- the invention is not limited to the embodiments described and shown.
- oxidizing ions for example ions from water vapor, or other medium charged ions in the second example of the application, by example of rare gas ions (Neon, Krypton, etc.) with an oxidation temperature of up to 500 ° C for the weakest charged ions.
- rare gas ions Neon, Krypton, etc.
- oxygen gas can be effective in the reactor from the start of the production of ions or as soon as the first ions approach the silicon surface.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Cleaning Or Drying Semiconductors (AREA)
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Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00925372A EP1183720A1 (fr) | 1999-05-07 | 2000-05-03 | Procede de nettoyage d'une surface de substrat de silicium et application a la fabrication de composants electroniques integres |
AU44119/00A AU4411900A (en) | 1999-05-07 | 2000-05-03 | Method for cleaning a silicon substrate surface and use for making integrated electronic components |
JP2000617487A JP2002544667A (ja) | 1999-05-07 | 2000-05-03 | シリコン基板表面の清浄化方法及び集積電子部品を製造するための使用 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR99/05835 | 1999-05-07 | ||
FR9905835A FR2793264B1 (fr) | 1999-05-07 | 1999-05-07 | Procede de nettoyage d'une surface de substrat de silicium et application a la fabrication de composants electroniques integres |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000068984A1 true WO2000068984A1 (fr) | 2000-11-16 |
Family
ID=9545339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2000/001182 WO2000068984A1 (fr) | 1999-05-07 | 2000-05-03 | Procede de nettoyage d'une surface de substrat de silicium et application a la fabrication de composants electroniques integres |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1183720A1 (fr) |
JP (1) | JP2002544667A (fr) |
AU (1) | AU4411900A (fr) |
FR (1) | FR2793264B1 (fr) |
WO (1) | WO2000068984A1 (fr) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6554950B2 (en) * | 2001-01-16 | 2003-04-29 | Applied Materials, Inc. | Method and apparatus for removal of surface contaminants from substrates in vacuum applications |
FR2949237B1 (fr) * | 2009-08-24 | 2011-09-30 | Ecole Polytech | Procede de nettoyage de la surface d'un substrat de silicium |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0516480A2 (fr) * | 1991-05-31 | 1992-12-02 | Research Development Corporation Of Japan | Procédé pour traiter des surfaces à l'aide de rayons d'ions à vitesse extra basse |
JPH09199457A (ja) * | 1996-01-22 | 1997-07-31 | Hitachi Ltd | クリーニング方法及びクリーニング装置 |
WO1998029901A1 (fr) * | 1996-12-31 | 1998-07-09 | Universite Pierre Et Marie Curie | Procede et dispositif de traitement d'une surface d'un semi-conducteur |
FR2764110A1 (fr) * | 1997-05-28 | 1998-12-04 | Univ Paris Curie | Dispositif et procede de gravure par ions |
-
1999
- 1999-05-07 FR FR9905835A patent/FR2793264B1/fr not_active Expired - Fee Related
-
2000
- 2000-05-03 WO PCT/FR2000/001182 patent/WO2000068984A1/fr not_active Application Discontinuation
- 2000-05-03 EP EP00925372A patent/EP1183720A1/fr not_active Withdrawn
- 2000-05-03 JP JP2000617487A patent/JP2002544667A/ja active Pending
- 2000-05-03 AU AU44119/00A patent/AU4411900A/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0516480A2 (fr) * | 1991-05-31 | 1992-12-02 | Research Development Corporation Of Japan | Procédé pour traiter des surfaces à l'aide de rayons d'ions à vitesse extra basse |
JPH09199457A (ja) * | 1996-01-22 | 1997-07-31 | Hitachi Ltd | クリーニング方法及びクリーニング装置 |
WO1998029901A1 (fr) * | 1996-12-31 | 1998-07-09 | Universite Pierre Et Marie Curie | Procede et dispositif de traitement d'une surface d'un semi-conducteur |
FR2764110A1 (fr) * | 1997-05-28 | 1998-12-04 | Univ Paris Curie | Dispositif et procede de gravure par ions |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 11 28 November 1997 (1997-11-28) * |
Also Published As
Publication number | Publication date |
---|---|
AU4411900A (en) | 2000-11-21 |
FR2793264A1 (fr) | 2000-11-10 |
JP2002544667A (ja) | 2002-12-24 |
EP1183720A1 (fr) | 2002-03-06 |
FR2793264B1 (fr) | 2001-06-15 |
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