TW201711517A - 光模組 - Google Patents

光模組 Download PDF

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Publication number
TW201711517A
TW201711517A TW105115134A TW105115134A TW201711517A TW 201711517 A TW201711517 A TW 201711517A TW 105115134 A TW105115134 A TW 105115134A TW 105115134 A TW105115134 A TW 105115134A TW 201711517 A TW201711517 A TW 201711517A
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apd
terminal
power supply
optical module
self
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TW105115134A
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TWI595801B (zh
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見上洋平
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三菱電機股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0295—Constructional arrangements for removing other types of optical noise or for performing calibration
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
    • G01R19/16523—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/40—Transceivers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H04B10/66—Non-coherent receivers, e.g. using direct detection
    • H04B10/69—Electrical arrangements in the receiver
    • H04B10/691—Arrangements for optimizing the photodetector in the receiver
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/446—Photodiode
    • G01J2001/4466—Avalanche

Abstract

獲得能夠不依存是否有光之入射而實現穩定之耐浪 湧(surge)特性之光模組。 在APD(Avalanche Photodiode)之陰極和電源端子 TV1之間，自我偏壓電阻R1被連接。浪湧對策用之齊納二極體(Zener Diode)D1之陰極，被連接至電源端子TV1與自我偏壓電阻R1之連接點，陽極則直接連接至接地端子TGND。接地端子TGND，電氣上被接地。齊納二極體D1之崩潰電壓VZ，比被施加至電源端子TV1之電源電壓Vapd還大。

Description

光模組
本發明係有關於具備APD(Avalanche photodiode)之光通信用之光模組。
在習知之光模組，在電源端子和APD之陰極之間，電阻被連接，並且在電阻和APD之陰極之連接點上，浪湧對策用之齊納二極體(Zener Diode)D1之陰極被連接(例如，參照專利文件1)。
[先行技術文件] [專利文件]
[專利文件1]日本特開平11-275755號公報
在浪湧被輸入之時，如果APD之陰極電壓小於齊納二極體之崩潰電壓，則浪湧(surge)電流不流過齊納二極體，而流過APD。接著，在強光入射至APD時，因為電阻之電壓壓降造成APD之陰極電壓降低，所以有所謂的擴大和齊納二極體之崩潰電壓之差而造成浪湧電流容易流過APD之問題。
本發明，係為了藉決上述課題之發明，其目的在 於獲得能夠不依存是否有光之入射而實現穩定之耐浪湧特性之光模組。
有關本發明之光模組，其特徵在於包括：APD(Avalance photodiode)；電源端子；連接在上述APD之陰極與上述電源端子之間之自我偏壓電阻；接地端子；以及陰極被連接至上述電源端與上述自我偏壓電阻之連接點，陽極被直接連接至上述接地端子之浪湧對策用之齊納二極體。
在本發明，齊納二極體被直接接至電源端子，因為不受自我偏壓電阻之影響，所以能夠不依存是否有光之入射而實現穩定之耐浪湧特性。
APD‧‧‧雪崩光電二極體(Avalanche Photodiode)
C1‧‧‧電容
D1，D_1~D_n‧‧‧齊納二極體
R1‧‧‧自我偏壓電阻
TGND‧‧‧接地端子
TV1‧‧‧電源端子
[第1圖]係表示有關於本發明之第一實施例之光模組之圖。
[第2圖]係表示有關於本發明之第二實施例之光模組之圖。
[第3圖]係表示有關於本發明之第三實施例之光模組之圖。
[第4圖]係表示有關於本發明之第四實施例之光模組之圖。
參照圖面，說明關於本發明之實施例之光模組。 在相同或對應之構成要素上，附加相同之符號，所以有省略重複說明之情形。
[第一實施例]
第1圖，係表示有關於本發明之第一實施例之光模組之圖。雪崩光電二極管APD(Avalanche photodiode)之陰極與電源端子TV1之間，自我偏壓電阻R1被連接。因此，APD和自我偏壓電阻R1串聯連接，而從電源端子TV1，透過自我偏壓電阻R1，供給電壓至APD。
APD之陽極，被連接至轉阻放大器(transimpedance amplifier)TIA，一旦光入射至APD，即在APD上光電流流過。TIA將這電流放大並將差動輸出從輸出端子TOUTP、TOUTN輸出。
雜訊去除用之電容C1之一端連接至APD和自我偏壓電阻R1之連接點，另一端連接至接地端子TGND。電容C2之一端連接至TIA和電源端子TV2之連接點，另一端連接至接地端子TGND。
浪湧對策用之齊納二極體D1之陰極，連接至電源端子TV1與自我偏壓電阻R1之連接點，陽極則直接連接至接地端子TGND。亦即，在齊納二極體D1之陰極和接地端子TGND之間，不連接開關等之其他電路元件，而兩者皆只藉由接線電氣上連接。
接地端子TGND，透過光模組外部之接線被接地。在電源端子TV1上，從光模組之外部電源來施加電源電壓Vapd(85V)。在電源端子TV2上，從光模組之外部電源來施加電源電壓Vcc。設定齊納二極體D1之崩潰電壓VZ與電源電壓 Vapd，使齊納二極體D1之崩潰電壓VZ比電源電壓Vapd還大(VZ>Vapd)。
因此，在本實施例，能夠於超過齊納二極體D1之崩潰電壓VZ之浪湧加入在光模組時，從電源端子TV1浪湧電流流至齊納二極體D1側來保護APD。又，因為齊納二極體D1直接連接至電源端子TV1，所以不受自我偏壓電阻R1之影響，即使在APD上光電流流過，亦能將Vapd-VZ之電壓保持為一定之電壓。因而，即使在APD上光電流流過之時，亦能實現和光電流不流過時相同之耐浪湧特性。亦即，能夠不依存光入射之有無，實現穩定之耐浪湧特性。又，自我偏壓電阻R1內建在光模組，所以能夠使光傳送接受機器側之電路小型化。
又，在來自光模組外部之浪湧電壓大於Vapd而小於Vz之時，電流不流過齊納二極體D1側而浪湧流過APD，所以希望是使Vapd和VZ之電壓值為盡量接近之值。
[第二實施例]
第2圖，係表示有關於本發明之第二實施例之光模組之圖。在本實施例，雜訊去除用之電容C1，一端連接至電源端子TV1和自我偏壓電阻R1之連接點，另一端連接至接地端子TGND，並和齊納二極體D1並聯連接。其他的構造和第一實施例一樣，所以能夠獲得和第一實施例同樣之效果。
在此，於第一實施例，在上升緣時間短之光輸入之時，光電流急速地變化，在自我偏壓電阻R1之電壓下降量亦急速地變化。因此，藉由電容C1和自我偏壓電阻R1之連接部位之電壓變動，蓄積在電容C1之電荷急速地流向APD，而 有APD故障之可能性。
相反地，在本實施例，藉由將電容C1直接連接至電源端子TV1，故不受在自我偏壓電阻R1之電壓下降量之變動之影響。因而，光即使入射至APD，流向APD之過渡之電流不會發生，所以能夠防止APD之故障。
[第三實施例]
第3圖，係表示有關於本發明之第三實施例之光模組之圖。在本實施例，使用相互串聯連接之複數之齊納二極體D_1~D_n(n為2以上之任意之整數)，代替齊納二極體D1。其他的構造和第一實施例一樣。總計複數之齊納二極體D_1~D_n之崩潰電壓值VZ_1+VZ_2+‧‧‧+VZ_n，比電源電壓VAPD還大，但是盡可能接近電源電壓VAPD以獲得穩定之耐浪湧特性。
[第四實施例]
第4圖，係表示有關於本發明之第四實施例之光模組之圖。在本實施例，使用相互串聯連接之複數之齊納二極體D_1~D_n(n為2以上之任意之整數)，代替齊納二極體D1。其他的構造和第二實施例一樣。總計複數之齊納二極體D_1~D_n之崩潰電壓值VZ_1+VZ_2+‧‧‧+VZ_n，比電源電壓VAPD還大，但是盡可能接近電源電壓VAPD以獲得穩定之耐浪湧特性。
APD‧‧‧雪崩光電二極體(Avalanche Photodiode)
C1、C2‧‧‧電容
D1‧‧‧齊納二極體
R1‧‧‧自我偏壓電阻
TGND‧‧‧接地端子
TV1、TV2‧‧‧電源端子
TOUTP、TOUTN‧‧‧輸出端子
Vapd、Vcc‧‧‧電源電壓
TIA‧‧‧轉阻放大器

Claims (5)

  1. 一種光模組，包括：APD(Avalance photodiode)；電源端子；自我偏壓電阻，連接在上述APD之陰極與上述電源端子之間；接地端子；以及浪湧對策用之齊納二極體，陰極被連接至上述電源端與上述自我偏壓電阻之連接點，陽極被直接連接至上述接地端子。
  2. 如申請專利範圍第1項所述之光模組，其中上述接地端子被接地；上述齊納二極體之崩潰電壓比被施加在上述電源端子之電源電壓還大。
  3. 如申請專利範圍第1或2項所述之光模組，其中又包括雜訊去除用之電容，一端連接至上述APD和上述自我偏壓電阻之連接點，另一端連接至上述接地端子。
  4. 如申請專利範圍第1或2項所述之光模組，其中又包括雜訊去除用之電容，一端連接至上述電源端和上述自我偏壓電阻之連接點，另一端連接至上述接地端子，並和上述齊納二極體並聯連接。
  5. 如申請專利範圍第1或2項所述之光模組，其中上述齊納二極體具有相互串聯連接之複數之齊納二極體。
TW105115134A 2015-08-05 2016-05-17 光模組 TWI595801B (zh)

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6988103B2 (ja) * 2017-02-27 2022-01-05 三菱電機株式会社 半導体装置の製造方法、半導体装置
CN110401485B (zh) * 2017-04-06 2021-12-14 青岛海信宽带多媒体技术有限公司 一种光模块
WO2020113564A1 (zh) * 2018-12-07 2020-06-11 深圳市大疆创新科技有限公司 一种激光接收电路及测距装置、移动平台
CN112117743B (zh) * 2020-10-12 2022-08-30 武汉海达数云技术有限公司 Apd保护电路和激光扫描仪

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017051B2 (ja) * 1978-11-20 1985-04-30 東京光学機械株式会社 アバランシェ・ダイオ−ドの温度補償方法
JPS59230307A (ja) * 1983-06-14 1984-12-24 Matsushita Electric Ind Co Ltd 光受信装置
JPH01240002A (ja) * 1988-03-19 1989-09-25 Fujitsu Ltd アバランシェフォトダイオードの逆バイアス回路
JPH0575355A (ja) * 1991-09-10 1993-03-26 Hitachi Ltd アバランシエホトダイオードのバイアス回路
JPH06314815A (ja) * 1993-04-28 1994-11-08 Ando Electric Co Ltd Ａｐｄバイアス回路
JPH07245540A (ja) 1994-01-12 1995-09-19 Fujitsu Ltd 光ディジタル通信用の光受信装置
US5953198A (en) * 1996-07-31 1999-09-14 Matsushita Electric Works, Ltd. Electromagnetic drive apparatus
JPH11275755A (ja) 1998-03-19 1999-10-08 Fujitsu Ltd アバランシェフォトダイオード保護回路を有する光受信回路
JP3766950B2 (ja) 1999-02-19 2006-04-19 富士通株式会社 Ａｐｄバイアス回路
US20030117121A1 (en) * 2001-12-20 2003-06-26 Prescott Daniel C. High-side current-sense circuit for precision application
TWI223932B (en) * 2003-08-12 2004-11-11 Pacific Electric Wire & Cable Photocurrent monitoring circuit of optical receiver
CN1834829A (zh) * 2005-03-17 2006-09-20 金德奎 微功率待机控制装置与方法
US20060291114A1 (en) * 2005-06-27 2006-12-28 Teo Chee K Electrostatic discharge protection circuit and method
KR20070033521A (ko) * 2005-09-21 2007-03-27 주식회사 현대오토넷 이·엠·에스 대책회로
US7755021B2 (en) * 2008-02-15 2010-07-13 Tyco Electronics Corporation Non-toxic photo cells and photosensors including the same
US7847512B2 (en) * 2008-03-20 2010-12-07 Min Carroll Solar powered DC load system
JP2012119069A (ja) * 2010-11-29 2012-06-21 Funai Electric Co Ltd ＬＥＤ（ＬｉｇｈｔＥｍｉｔｔｉｎｇＤｉｏｄｅ）点灯回路および液晶表示装置
CN102752921B (zh) * 2012-06-21 2014-07-09 叶选锋 一种光控开关
JP6241243B2 (ja) 2013-12-09 2017-12-06 三菱電機株式会社 Ａｐｄ回路

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KR20170017780A (ko) 2017-02-15
JP2017034583A (ja) 2017-02-09
TWI595801B (zh) 2017-08-11
US10205034B2 (en) 2019-02-12
JP6528587B2 (ja) 2019-06-12
CN106451393A (zh) 2017-02-22
KR101911141B1 (ko) 2018-10-23
CN106451393B (zh) 2019-03-15
US20170040467A1 (en) 2017-02-09

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