CN106451393B - 光模块 - Google Patents

光模块 Download PDF

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CN106451393B
CN106451393B CN201610639226.5A CN201610639226A CN106451393B CN 106451393 B CN106451393 B CN 106451393B CN 201610639226 A CN201610639226 A CN 201610639226A CN 106451393 B CN106451393 B CN 106451393B
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apd
power supply
optical module
supply terminal
zener diode
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CN106451393A (zh
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见上洋平
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Mitsubishi Electric Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0295—Constructional arrangements for removing other types of optical noise or for performing calibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
    • G01R19/16523—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/40—Transceivers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H04B10/66—Non-coherent receivers, e.g. using direct detection
    • H04B10/69—Electrical arrangements in the receiver
    • H04B10/691—Arrangements for optimizing the photodetector in the receiver
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/446—Photodiode
    • G01J2001/4466—Avalanche

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Amplifiers (AREA)
  • Optical Communication System (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

得到一种光模块，其能够实现稳定的浪涌耐受性而不依赖于有无光的射入。在APD(Avalanche Photodiode)的阴极与电源端子(TV1)之间连接有自偏置电阻(R1)。用于浪涌对策的齐纳二极管(D1)的阴极连接于电源端子(TV1)与自偏置电阻(R1)的连接点，阳极与接地端子(TGND)直接连接。接地端子(TGND)被电气接地。齐纳二极管(D1)的击穿电压(Vz)比施加于电源端子(TV1)的电源电压(Vapd)大。

Description

光模块
技术领域
本发明涉及一种具有APD(Avalanche Photodiode)的用于光通信的光模块。
背景技术
在现有的光模块中，在电源端子与APD的阴极之间连接有电阻，在电阻与APD的阴极的连接点连接有用于浪涌对策的齐纳二极管的阴极(例如参照专利文献1)。
专利文献1：日本特开平11-275755号公报
在被输入了浪涌的情况下，如果APD的阴极电压小于齐纳二极管的击穿电压，则浪涌电流流过APD而不流过齐纳二极管。并且，在强光射入至APD的情况下存在如下问题，即，由于电阻的电压降而引起APD的阴极电压降低，因此与齐纳二极管的击穿电压之差扩大而容易在APD流过浪涌电流。
发明内容
本发明就是为了解决上述的课题而提出的，其目的在于得到一种光模块，该光模块能够实现稳定的浪涌耐受性而不依赖于有无光的射入。
本发明涉及的光模块的特征在于，具有：APD(Avalanche Photodiode)；电源端子；自偏置电阻，其连接于所述APD的阴极与所述电源端子之间；接地端子；以及用于浪涌对策的齐纳二极管，其阴极连接于所述电源端子与所述自偏置电阻的连接点，阳极与所述接地端子直接连接。
发明的效果
在本发明中，齐纳二极管与电源端子直接连接，不受自偏置电阻的影响，因此能够实现稳定的浪涌耐受性而不依赖于有无光的射入。
附图说明
图1是表示本发明的实施方式1涉及的光模块的图。
图2是表示本发明的实施方式2涉及的光模块的图。
图3是表示本发明的实施方式3涉及的光模块的图。
图4是表示本发明的实施方式4涉及的光模块的图。
标号的说明
APD雪崩光电二极管，C1电容器，D1、D_1～D_n齐纳二极管，R1自偏置电阻，TGND接地端子，TV1电源端子
具体实施方式
参照附图，对本发明的实施方式涉及的光模块进行说明。对相同或对应的结构要素标注相同的标号，有时省略重复的说明。
实施方式1.
图1是表示本发明的实施方式1涉及的光模块的图。在雪崩光电二极管APD(Avalanche Photodiode)的阴极与电源端子TV1之间连接有自偏置电阻R1。因此，APD与自偏置电阻R1串联连接，从电源端子TV1经由自偏置电阻R1而将电压供给至APD。
在APD的阳极连接有跨阻放大器TIA。如果光射入至APD，则光电流流过APD。TIA将其放大而将差动输出从输出端子TOUTP、TOUTN输出。
用于去除噪声的电容器C1的一端连接于APD与自偏置电阻R1的连接点，另一端与接地端子TGND连接。电容器C2的一端连接于TIA与电源端子TV2的连接点，另一端与接地端子TGND连接。
用于浪涌对策的齐纳二极管D1的阴极连接于电源端子TV1与自偏置电阻R1的连接点，阳极与接地端子TGND直接连接。即，在齐纳二极管D1的阳极与接地端子TGND之间未连接开关等其他的电路元件，两者仅通过配线而电连接。
接地端子TGND经由光模块外部的配线而接地。由光模块外部的电源将电源电压Vapd(85V)施加于电源端子TV1。由光模块外部的电源将电源电压Vcc施加于电源端子TV2。以齐纳二极管D1的击穿电压Vz比电源电压Vapd大的方式而设定击穿电压Vz和电源电压Vapd(Vz＞Vapd)。
由此，在本实施方式中，在光模块被施加了超过齐纳二极管D1的击穿电压Vz的浪涌的情况下，浪涌电流从电源端子TV1流至齐纳二极管D1侧，能够保护APD。另外，由于齐纳二极管D1与电源端子TV1直接连接，因此不受自偏置电阻R1的影响，即使光电流流过APD，Vapd－Vz也保持固定。因此，即使在光电流流过APD的情况下，也能够实现与未流过光电流的情况相同的浪涌耐受性。即，能够实现稳定的浪涌耐受性而不依赖于有无光的射入。另外，由于将自偏置电阻R1内置于光模块，因此能够使光收发机侧的电路小型化。
此外，在来自光模块外部的浪涌电压大于或等于Vapd而小于Vz的情况下，电流不流至齐纳二极管D1侧，浪涌电流流过APD，因此Vapd和Vz优选设为尽可能相近的值。
实施方式2.
图2是表示本发明的实施方式2涉及的光模块的图。在本实施方式中，用于去除噪声的电容器C1的一端连接于电源端子TV1与自偏置电阻R1的连接点，另一端与接地端子TGND连接，该电容器C1与齐纳二极管D1并联连接。其他的结构与实施方式1相同，能够得到与实施方式1相同的效果。
在这里，在实施方式1中，在输入了上升沿时间短的光时，光电流急剧地变动，自偏置电阻R1处的电压降的值也急剧地变动。由此，由于电容器C1与自偏置电阻R1的连接部的电压变动，在电容器C1蓄积的电荷急剧地流向APD，APD可能会发生故障。
另一方面，在本实施方式中，通过将电容器C1与电源端子TV1直接连接，从而不受自偏置电阻R1处的电压降的值的变动的影响。因此，即使光射入至APD，也不会产生朝向APD的瞬态电流，因此能够防止APD的故障。
实施方式3.
图3是表示本发明的实施方式3涉及的光模块的图。在本实施方式中，取代齐纳二极管D1而使用相互串联连接的多个齐纳二极管D_1～D_n(n为大于或等于2的任意整数)。其他的结构与实施方式1相同。将多个齐纳二极管D_1～D_n的击穿电压合计后的值Vz_1+Vz_2…+Vz_n比电源电压Vapd大，但通过尽可能地趋近于电源电压Vapd，从而得到稳定的浪涌耐受性。
实施方式4.
图4是表示本发明的实施方式4涉及的光模块的图。在本实施方式中，取代齐纳二极管D1而使用相互串联连接的多个齐纳二极管D_1～D_n(n为大于或等于2的任意整数)。其他的结构与实施方式2相同。将多个齐纳二极管D_1～D_n的击穿电压合计后的值Vz_1+Vz_2…+Vz_n比电源电压Vapd大，但通过尽可能地趋近于电源电压Vapd，从而得到稳定的浪涌耐受性。

Claims (6)

1.一种光模块，其特征在于，具有：
APD即雪崩光电二极管；
电源端子；
自偏置电阻，其连接于所述APD的阴极与所述电源端子之间；
接地端子；
放大器，其与所述APD的阳极连接，对在光入射至所述APD时流过所述APD的光电流进行放大而输出；以及
用于浪涌对策的齐纳二极管，其阴极在所述电源端子与所述自偏置电阻的连接点处与所述电源端子直接连接，阳极与所述接地端子直接连接。
2.根据权利要求1所述的光模块，其特征在于，
所述接地端子被接地，
所述齐纳二极管的击穿电压比施加于所述电源端子的电源电压大。
3.根据权利要求1或2所述的光模块，其特征在于，
还具有用于去除噪声的电容器，该电容器的一端连接于所述电源端子与所述自偏置电阻的连接点，另一端与所述接地端子连接，该电容器与所述齐纳二极管并联连接。
4.根据权利要求1或2所述的光模块，其特征在于，
所述齐纳二极管具有相互串联连接的多个齐纳二极管。
5.根据权利要求1所述的光模块，其特征在于，
还具有用于去除噪声的电容器，该电容器的一端连接于所述APD与所述自偏置电阻的连接点，另一端与所述接地端子连接。
6.根据权利要求5所述的光模块，其特征在于，
所述接地端子被接地，
所述齐纳二极管的击穿电压比施加于所述电源端子的电源电压大。
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CN110401485B (zh) * 2017-04-06 2021-12-14 青岛海信宽带多媒体技术有限公司 一种光模块
WO2020113564A1 (zh) * 2018-12-07 2020-06-11 深圳市大疆创新科技有限公司 一种激光接收电路及测距装置、移动平台
CN112117743B (zh) * 2020-10-12 2022-08-30 武汉海达数云技术有限公司 Apd保护电路和激光扫描仪

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CN106451393A (zh) 2017-02-22
TW201711517A (zh) 2017-03-16
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