TW201701977A - 雷射加工裝置 - Google Patents

雷射加工裝置 Download PDF

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TW201701977A
TW201701977A TW105107365A TW105107365A TW201701977A TW 201701977 A TW201701977 A TW 201701977A TW 105107365 A TW105107365 A TW 105107365A TW 105107365 A TW105107365 A TW 105107365A TW 201701977 A TW201701977 A TW 201701977A
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spherical aberration
laser processing
laser light
workpiece
laser beam
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TWI673127B (zh
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Hiroshi Morikazu
Noboru Takeda
Kazuya Hirata
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Disco Corp
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/356—Working by laser beam, e.g. welding, cutting or boring for surface treatment by shock processing
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
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    • G—PHYSICS
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0267—Integrated focusing lens
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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Abstract

提供一種雷射加工裝置，能夠對被加工物沿著設定好的分割預定線有效率地施以適當的雷射加工。 雷射加工裝置的聚光器，包含：聚光透鏡，將從雷射光線振盪手段振盪出的雷射光線予以聚光；及球面像差延伸透鏡，將聚光透鏡的球面像差予以延伸。從聚光器對被保持於夾盤平台之被加工物照射脈衝雷射光線，藉此從被加工物的上面朝向下面形成由細孔與盾護(shield)該孔的非晶質所構成之潛盾隧道(shield tunnel)。

Description

雷射加工裝置
本發明有關對晶圓等被加工物施以雷射加工之雷射加工裝置，特別是有關適於藍寶石(Al2O3)基板、碳化矽(SiC)基板、氮化鎵(GaN)基板、鉭酸鋰(LiTaO3)基板、鈮酸鋰(LiNbO3)基板、鑽石基板、石英基板等單晶基板的雷射加工之雷射加工裝置。
光學元件(optical device)製造程序中，會對在藍寶石(Al2O3)基板、碳化矽(SiC)基板、氮化鎵(GaN)基板的表面層積有由n型氮化物半導體層及p型氮化物半導體層所構成之光學元件層而被形成為格子狀之複數個分割預定線區隔開來的複數個區域，形成發光二極體、雷射二極體等光學元件來構成光學元件晶圓。然後，將光學元件晶圓沿著分割預定線照射雷射光線予以切斷，藉此將形成有光學元件之區域予以分割而製造各個光學元件。此外，對於在鉭酸鋰(LiTaO3)基板、鈮酸鋰(LiNbO3)基板、碳化矽(SiC)基板、鑽石基板、石英基板的表面形成有SAW(表面聲波)元件之SAW晶圓， 亦是沿著分割預定線照射雷射光線予以切斷，藉此製造各個SAW元件。
作為上述分割光學元件晶圓或SAW晶圓等晶圓之方法，亦有人嘗試使用對於被加工物亦即晶圓具有穿透性的波長之脈衝雷射光線，令聚光點合焦於欲分割之區域的內部而照射脈衝雷射光線之雷射加工方法。使用了該雷射加工方法之分割方法，係為下述技術，即，從晶圓的一方之面側令聚光點合焦於內部而照射對於晶圓具有穿透性的波長之脈衝雷射光線，在被加工物的內部沿著分割預定線連續地形成作為裁斷起點之改質層，並沿著因形成該改質層而強度降低了的分割預定線施加外力，藉此分割晶圓(例如參照專利文獻1)。
此外，作為沿著分割預定線分割半導體晶圓或光學元件晶圓等晶圓之方法，係有下述技術導入實用化，即，沿著分割預定線照射對於被加工物亦即晶圓具有吸收性的波長之脈衝雷射光線，藉此施加燒蝕(ablation)加工而形成雷射加工溝，並沿著形成有作為裁斷起點之雷射加工溝的分割預定線賦予外力，藉此割斷(例如參照專利文獻2)。
〔先前技術文獻〕 〔專利文獻〕
[專利文獻1]日本特許第3408805號公報
[專利文獻2]日本特開平10-305420號公報
不過，在使用對於被加工物亦即晶圓具有穿透性的波長之脈衝雷射光線，令聚光點合焦於欲分割之區域的內部而照射脈衝雷射光線之雷射加工方法中，若要將由藍寶石(Al2O3)基板等所構成之光學元件晶圓沿著分割預定線分割成各個元件，必須對同一分割預定線照射複數次雷射光線，而有生產性不佳的問題。
此外，在沿著分割預定線照射對於被加工物亦即晶圓具有吸收性的波長之脈衝雷射光線而施加燒蝕加工以形成雷射加工溝之雷射加工方法中，會因雷射光線的照射而有碎屑飛散，而有飛散的碎屑附著於元件表面使得品質降低之問題。
本發明係有鑑於上述事實而研發，其主要的技術課題在於提供一種雷射加工裝置，能夠對被加工物沿著設定好的分割預定線有效率地施以適當的雷射加工。
為解決上述主要技術課題，按照本發明，係提供一種雷射加工裝置，具備：夾盤平台保持被加工物；及雷射光線照射手段，對被保持於該夾盤平台之被加工物照射脈衝雷射光線；及加工饋送手段，令該夾盤平台與該雷射光線照射手段於加工饋送方向相對地移動；該雷射加 工裝置，其特徵為：該雷射光線照射手段，包含：雷射光線振盪手段，振盪對於被加工物具有穿透性的波長之雷射光線；及聚光器，將從該雷射光線振盪手段振盪出的雷射光線予以聚光而照射至被保持於該夾盤平台之被加工物；該聚光器，具有：聚光透鏡，將從該雷射光線振盪手段振盪出的雷射光線予以聚光；及球面像差延伸透鏡，將該聚光透鏡的球面像差予以延伸；從該聚光器對被保持於該夾盤平台之被加工物照射脈衝雷射光線，藉此從被加工物的上面朝向下面形成由細孔與盾護(shield)該細孔的非晶質所構成之潛盾隧道(shield tunnel)。
較佳是，上述球面像差延伸透鏡，將聚光透鏡的球面像差延伸成100~500μm。較佳是，上述脈衝雷射光線，峰值能量密度被設定在1TW/cm2~100TW/cm2之範圍。
按照本發明之雷射加工裝置，聚光器具備：聚光透鏡，將從雷射光線振盪手段振盪出的雷射光線予以聚光；及球面像差延伸透鏡，將聚光透鏡的球面像差予以延伸。從聚光器對被保持於夾盤平台之被加工物照射脈衝雷射光線，藉此，球面像差會藉由球面像差延伸透鏡而被延伸，從被加工物的上面朝向下面形成由細孔與盾護該細孔的非晶質所構成之潛盾隧道，故能夠從被加工物的上面橫亙至下面沿著分割預定線有效率地形成潛盾隧道。
2‧‧‧靜止基台
3‧‧‧夾盤平台機構
36‧‧‧夾盤平台
37‧‧‧加工饋送手段
38‧‧‧分度饋送手段
4‧‧‧雷射光線照射單元
5‧‧‧雷射光線照射手段
51‧‧‧脈衝雷射光線振盪手段
52‧‧‧輸出調整手段
53‧‧‧聚光器
532‧‧‧聚光透鏡
533‧‧‧球面像差延伸透鏡
6‧‧‧拍攝手段
10‧‧‧光學元件晶圓
F‧‧‧環狀的框架
T‧‧‧切割膠帶
[圖1]遵照本發明而構成之雷射加工裝置的立體圖。
[圖2]圖1所示雷射加工裝置中配備之雷射光線照射手段的方塊構成圖。
[圖3]示意構成圖2所示雷射光線照射手段的聚光器之球面像差延伸透鏡的實施形態，(a)為4個球面像差延伸透鏡的側面圖，(b)為將該4個球面像差延伸透鏡配設於旋轉圓盤而成之球面像差變更機構的立體圖。
[圖4]作為被加工物之光學元件晶圓的立體圖。
[圖5]將圖4所示光學元件晶圓貼附在裝配於環狀的框架的切割膠帶之狀態示意立體圖。
[圖6]使用圖1所示雷射加工裝置對圖4所示光學元件晶圓實施之潛盾隧道形成工程的說明圖。
以下參照所附圖面，詳細說明遵照本發明而構成之雷射加工裝置的良好實施形態。
圖1揭示遵照本發明而構成之雷射加工裝置1的立體圖。圖1所示雷射加工裝置1，具備：靜止基台2；及夾盤平台(chuck table)機構3，配設於該靜止基台2而可朝箭頭X所示加工饋送方向亦即X軸方向移動，並保持被加工物；及雷射光線照射單元4，配設於靜止基台 2上。
上述夾盤平台機構3，具備：一對導軌31、31，沿X軸方向平行配設於靜止基台2上；及第1滑動塊32，配設於該導軌31、31上而可朝X軸方向移動；及第2滑動塊33，配設於該第1滑動塊32上而可朝和X軸方向正交之箭頭Y所示分度(indexing)饋送方向亦即Y軸方向移動；及覆蓋平台35，在該第2滑動塊33上受到圓筒構件34支撐；及夾盤平台36，作為被加工物保持手段。該夾盤平台36具備由多孔性材料形成之吸附夾盤361，而在吸附夾盤361的上面亦即保持面上將被加工物亦即例如圓形狀的半導體晶圓藉由未圖示之吸附手段予以保持。像這樣構成的夾盤平台36，是藉由配設於圓筒構件34內之未圖示脈衝電動機令其旋轉。另，在夾盤平台36配設有夾鉗362，用來固定環狀的框架，該環狀的框架係透過保護膠帶支撐半導體晶圓等被加工物。
上述第1滑動塊32，在其下面設有與上述一對導軌31、31嵌合之一對被導引溝321、321，且在其上面設有沿Y軸方向平行形成之一對導軌322、322。像這樣構成的第1滑動塊32，係構成為藉由被導引溝321、321嵌合至一對導軌31、31，而可沿著一對導軌31、31朝X軸方向移動。本實施形態中的夾盤平台機構3，具備加工饋送手段37，用來令第1滑動塊32沿著一對導軌31、31朝X軸方向移動。加工饋送手段37，包含：公螺桿371，平行配設於上述一對導軌31與31之間；及脈衝 電動機372等驅動源，用來將該公螺桿371旋轉驅動。公螺桿371，其一端被支撐在固定於上述靜止基台2之軸承塊373而旋轉自如，其另一端和上述脈衝電動機372的輸出軸傳動連結。另，公螺桿371，與在第1滑動塊32的中央部下面突出設置之未圖示母螺牙塊上形成的貫通母螺牙孔螺合。是故，藉由脈衝電動機372將公螺桿371正轉及反轉驅動，藉此令第1滑動塊32沿著導軌31、31朝X軸方向移動。
上述第2滑動塊33，在其下面設有與設於上述第1滑動塊32的上面的一對導軌322、322嵌合之一對被導引溝331、331，藉由將該被導引溝331、331嵌合至一對導軌322、322，而構成為可朝Y軸方向移動。本實施形態中的夾盤平台機構3，具備分度饋送手段38，用來令第2滑動塊33沿著設於第1滑動塊32之一對導軌322、322朝Y軸方向移動。分度饋送手段38，包含：公螺桿381，平行配設於上述一對導軌322與322之間；及脈衝電動機382等驅動源，用來將該公螺桿381旋轉驅動。公螺桿381，其一端被支撐在固定於上述第1滑動塊32的上面之軸承塊383而旋轉自如，其另一端和上述脈衝電動機382的輸出軸傳動連結。另，公螺桿381，與在第2滑動塊33的中央部下面突出設置之未圖示母螺牙塊上形成的貫通母螺牙孔螺合。是故，藉由脈衝電動機382將公螺桿381正轉及反轉驅動，藉此令第2滑動塊33沿著導軌322、322朝Y軸方向移動。
上述雷射光線照射單元4，具備：支撐構件41，配設於上述基台2上；及外殼42，受到該支撐構件41支撐，實質上水平地延伸；及雷射光線照射手段5，配設於該外殼42；及拍攝手段6，配設於外殼42的前端部而檢測應做雷射加工之加工區域。另，拍攝手段6，具備照明被加工物之照明手段、及捕捉受到該照明手段照明的區域之光學系統、及拍攝被該光學系統捕捉到的像之拍攝元件(CCD)等，而將拍攝出的圖像訊號送至未圖示之控制手段。
針對上述雷射光線照射手段5，參照圖2說明之。雷射光線照射手段5，具備：脈衝雷射光線振盪手段51；及輸出調整手段52，調整從該脈衝雷射光線振盪手段51振盪出的脈衝雷射光線的輸出；及聚光器53，將從雷射光線振盪手段51振盪並藉由輸出調整手段52調整過輸出的脈衝雷射光線予以聚光並照射至被保持於夾盤平台36之被加工物。脈衝雷射光線振盪手段51，係由脈衝雷射光線振盪器511、及附設於其之反覆頻率設定手段512所構成。另，脈衝雷射光線振盪手段51的脈衝雷射光線振盪器511，於本實施形態中係振盪波長為1030nm的脈衝雷射光線LB。另，上述脈衝雷射光線振盪手段51及輸出調整手段52，是藉由未圖示之控制手段而受到控制。
上述聚光器53，係由：方向變換鏡531，將從上述脈衝雷射光線振盪手段51振盪而藉由輸出調整手段52調整成規定的輸出之脈衝雷射光線LB朝向下方做 方向變換；及聚光透鏡532，將藉由該方向變換鏡531而被方向變換的脈衝雷射光線LB予以聚光；及球面像差延伸透鏡533，將該聚光透鏡532的球面像差予以延伸。本發明者證實，該聚光器53的聚光透鏡532，當將數值孔徑(NA)除以由單晶基板所構成之被加工物的折射率(N)而得之值落在0.05~0.4之範圍的情形下，會形成潛盾隧道。
上述球面像差延伸透鏡533，如圖2所示般將聚光透鏡532本身的聚光點P0延伸至像差聚光點P。另，球面像差延伸透鏡533，理想是設定成將聚光透鏡532的球面像差在100~500μm之範圍內延伸。
圖3(a)中揭示複數個(本實施形態中為4個)球面像差延伸透鏡533a，533b，533c，533d，圖3(b)中揭示將4個球面像差延伸透鏡533a，533b，533c，533d配置於旋轉圓盤而成之球面像差變更機構530。4個球面像差延伸透鏡533a，533b，533c，533d，各自由石英形成。球面像差延伸透鏡533a由上面及下面為平行之石英板透鏡所構成，球面像差延伸透鏡533b，533c，533d各自由發散角(divergence angle)不同之凹透鏡所構成。另，本實施形態中係設定成球面像差延伸透鏡533b的發散角最小，球面像差延伸透鏡533c的發散角為中間，球面像差延伸透鏡533d的發散角最大。是故，4個球面像差延伸透鏡533a，533b，533c，533d當中，係設定成像差依533a，533b，533c，533d的順序變大。構 成像這樣形成之球面像差變更機構530的4個球面像差延伸透鏡533a，533b，533c，533d，如圖3(b)所示般配設於旋轉圓盤540上設置之貫通孔540a，540b，540c，540d。像這樣配設有球面像差延伸透鏡533a，533b，533c，533d之旋轉圓盤540，係藉由旋轉機構550而以軸心為中心旋轉。將該旋轉圓盤540旋轉驅動之旋轉機構550，受到未圖示之控制手段控制。像這樣，藉由配備在旋轉圓盤540配設複數個球面像差延伸透鏡533a，533b，533c，533d而成之球面像差變更機構530，便能選擇適合欲形成的潛盾隧道的長度之球面像差延伸透鏡。
本實施形態中的雷射加工裝置1係如以上般構成，以下說明其作用。
圖4揭示光學元件晶圓10的立體圖。圖4所示光學元件晶圓10，由厚度400μm的單晶基板亦即藍寶石(Al2O3)基板所構成，在表面10a形成由n型氮化鎵半導體層及p型氮化鎵半導體層所構成之光學元件層，在被形成為格子狀的複數個分割預定線101區隔開來的複數個區域形成有光學元件102。以下，說明在該光學元件晶圓10沿著分割預定線101從上面朝向下面形成由細孔與盾護該細孔的非晶質所構成之潛盾隧道之方法。
首先，實施被加工物支撐工程，即在光學元件晶圓10的背面10b貼附由合成樹脂所構成之切割膠帶的表面，並且將切割膠帶的外周部藉由環狀的框架予以支撐。亦即，如圖5所示，在切割膠帶T的表面貼附光學元 件晶圓10的背面10b，該切割膠帶T係外周部被裝配而覆蓋環狀的框架F的內側開口部。另，切割膠帶T，於本實施形態中係由聚氯乙烯(PVC)薄片所形成。
實施了上述被加工物支撐工程，便如圖1所示在雷射加工裝置的夾盤平台36上載置光學元件晶圓10的切割膠帶T側。然後，啟動未圖示之吸附手段，藉此將光學元件晶圓10透過切割膠帶T吸附保持於夾盤平台36上(被加工物保持工程)。是故，透過切割膠帶T被保持於夾盤平台36之光學元件晶圓10，其表面10a成為上側。另，透過切割膠帶T支撐著光學元件晶圓10之環狀的框架F，係藉由配設於夾盤平台36之夾鉗362而被固定。
實施了上述被加工物保持工程，則啟動加工饋送手段37將吸附保持著光學元件晶圓10之夾盤平台36定位至拍攝手段6的正下方。一旦夾盤平台36被定位至拍攝手段6的正下方，藉由拍攝手段6及未圖示之控制手段執行校準作業，以檢測光學元件晶圓10的應做雷射加工之加工區域。亦即，拍攝手段6及未圖示之控制手段，執行圖樣比對(pattern matching)等圖像處理以用來與沿著形成於光學元件晶圓10的第1方向的分割預定線101照射雷射光線之雷射光線照射手段5的聚光器53進行對位，來完成雷射光線照射位置之校準。此外，對於形成於光學元件晶圓10之於和第1方向正交的方向形成之分割預定線101，同樣地遂行雷射光線照射位置之校準。
實施了上述校準工程，則如圖6(a)所示般將夾盤平台36移動至照射雷射光線的雷射光線照射手段5的聚光器53所位處之雷射光線照射區域，並將規定的分割預定線101定位至聚光器53的正下方。此時，如圖6(a)所示般，光學元件晶圓10，其分割預定線101的一端(圖6(a)中的左端)被定位成位於聚光器53的正下方。然後，啟動未圖示之聚光點位置調整手段，將聚光器53朝光軸方向移動，使得藉由聚光器53的聚光透鏡532而被聚光且藉由球面像差延伸透鏡533而球面像差受到延伸之脈衝雷射光線LB的聚光點P0，從由身為單晶基板的藍寶石(Al2O3)基板所構成之光學元件晶圓10的表面10a被定位至厚度方向的期望位置(定位工程)。另，本實施形態中，脈衝雷射光線的聚光點P0，是從由身為光學元件晶圓當中供脈衝雷射光線入射之單晶基板的藍寶石(Al2O3)基板所構成之光學元件晶圓10的表面10a被定位至期望位置(例如自表面10a朝背面10b側相距5~10μm之位置)。是故，像差聚光點P會更被定位至背面10b側。
實施了上述這樣的定位工程，則實施潛盾隧道形成工程，即，啟動雷射光線照射手段5從聚光器53照射脈衝雷射光線LB，從被定位於由身為單晶基板的藍寶石(Al2O3)基板所構成之光學元件晶圓10之聚光點P0附近(表面10a)朝向背面10b，令細孔與盾護該細孔的非晶質形成，而形成潛盾隧道。亦即，從聚光器53照射 對於身為構成光學元件晶圓10的單晶基板之藍寶石(Al2O3)基板具有穿透性的波長之脈衝雷射光線LB，同時令夾盤平台36朝圖6(a)中箭頭X1所示方向以規定的饋送速度移動(潛盾隧道形成工程)。然後，如圖6(b)所示般當分割預定線101的另一端(圖6(b)中的右端)到達雷射光線照射手段5的聚光器53的雷射光線照射位置後，停止脈衝雷射光線之照射並且停止夾盤平台36之移動。
藉由實施上述潛盾隧道形成工程，在由身為單晶基板的藍寶石(Al2O3)基板所構成之光學元件晶圓10的內部，如圖6(c)所示般從脈衝雷射光線LB的像差聚光點P附近(表面10a)朝向背面10b，會有細孔111與形成於該細孔111的周圍之非晶質112成長，並沿著分割預定線101以規定的間隔(本實施形態中為10μm的間隔(加工饋送速度：1000mm/秒)/(反覆頻率：100kHz))形成非晶質之潛盾隧道110。像這樣形成的潛盾隧道110，如圖6(d)及(e)所示般係由形成於中心之直徑 1μm程度的細孔111與形成於該細孔111的周圍之直徑 10μm的非晶質112所構成，本實施形態中呈相互鄰接的非晶質112彼此以相連的方式連接而形成之形態。另，上述潛盾隧道形成工程中形成之非晶質的潛盾隧道110，能夠從由身為單晶基板的藍寶石(Al2O3)基板所構成之光學元件晶圓10的表面10a橫亙至背面10b而形成，因此即使由身為單晶基板的藍寶石(Al2O3)基板所 構成之光學元件晶圓10的厚度較厚，仍只要照射1次脈衝雷射光線即可，故生產性極為良好。
像上述這樣沿著規定的分割預定線101實施了上述潛盾隧道形成工程，則啟動分度饋送手段38將夾盤平台36朝Y軸方向以恰好形成於光學元件晶圓10之分割預定線101的間隔做分度移動(分度工程)，再遂行上述潛盾隧道形成工程。像這樣沿著形成於第1方向之所有分割預定線101實施了上述潛盾隧道形成工程，則令夾盤平台36做90度旋動，沿著相對於形成於上述第1方向之分割預定線101而言朝正交方向延伸之分割預定線101，執行上述潛盾隧道形成工程。
上述潛盾隧道形成工程中，為形成良好的潛盾隧道110，理想是將脈衝雷射光線LB的峰值能量密度設定在1TW/cm2~100TW/cm2之範圍。另，峰值能量密度，能夠藉由平均輸出(W)/(反覆頻率(Hz)×點面積(cm2)×脈衝寬度(s))來求出。
以下，說明將脈衝雷射光線LB的峰值能量密度設定在1TW/cm2~100TW/cm2之範圍的理由。
〔實驗例〕 〔實驗：1〕
條件1‧‧‧單晶基板：藍寶石基板(厚度400μm)
條件2‧‧‧將脈衝雷射光線的波長設定在1030nm
條件3‧‧‧將脈衝雷射光線的反覆頻率設定在100kHz
條件4‧‧‧將脈衝雷射光線的點徑設定在10μm
條件5‧‧‧將脈衝雷射光線的平均輸出設定在5W
條件6‧‧‧變數：脈衝雷射光線的脈衝寬度
遵照上述條件令脈衝寬度一面自0.1~100ps變化一面對藍寶石基板照射脈衝雷射光線，觀察加工狀態。
脈衝寬度自0.1~0.6ps為止，會在藍寶石基板的內部形成孔洞(void)。
脈衝寬度自0.7~63ps為止，會在藍寶石基板的內部形成由細孔與盾護細孔的非晶質所構成之潛盾隧道。
脈衝寬度自64~100ps為止，藍寶石基板的內部會熔融。
由以上實驗結果可知，脈衝寬度為0.7~63ps的範圍內，會在藍寶石基板的內部形成由細孔與盾護細孔的非晶質所構成之潛盾隧道。是故，上述條件中將脈衝寬度訂為0.7~63ps來求出峰值能量密度，則藉由設定在1TW/cm2~100TW/cm2之範圍便會形成潛盾隧道。
〔實驗：2〕
條件1‧‧‧單晶基板：藍寶石基板(厚度400μm)
條件2‧‧‧將脈衝雷射光線的波長設定在1030nm
條件3‧‧‧將脈衝雷射光線的平均輸出設定在5W
條件4‧‧‧將脈衝寬度設定在10ps
條件5‧‧‧將脈衝雷射光線的點徑設定在10μm
條件6‧‧‧變數：脈衝雷射光線的反覆頻率
遵照上述條件令反覆頻率一面自1~1000kHz變化一面對藍寶石基板照射脈衝雷射光線，觀察加工狀態。
反覆頻率自1~6kHz為止，藍寶石基板的內部會被破壞而裂痕形成為放射狀。
反覆頻率自7~640kHz為止，會在藍寶石基板的內部形成由細孔與盾護細孔的非晶質所構成之潛盾隧道。
反覆頻率自650~1000kHz為止，會在藍寶石基板的內部形成孔洞而未形成潛盾隧道。
由以上實驗結果可知，反覆頻率為7~640kHz的範圍內，會在藍寶石基板的內部形成由細孔與盾護細孔的非晶質所構成之潛盾隧道。是故，上述條件中將反覆頻率訂為7~640kHz來求出峰值能量密度，則藉由設定在1TW/cm2~100TW/cm2之範圍便會形成潛盾隧道。
上述實驗1及實驗2揭示了對藍寶石(Al2O3)基板實施之例子，但對於身為單晶基板的碳化矽(SiC)基板、氮化鎵(GaN)基板、鉭酸鋰(LiTaO3)基板、鈮酸鋰(LiNbO3)基板、鑽石基板、石英(SiO2)基板也進行了和上述實驗1及實驗2同樣的實驗，得到大略相同的結果。
〔實驗：3〕
條件1‧‧‧單晶基板：藍寶石基板(厚度 1000μm)
條件2‧‧‧將脈衝雷射光線的波長設定在1030nm
條件3‧‧‧將脈衝寬度設定在10ps
條件4‧‧‧將脈衝雷射光線的點徑設定在10μm
條件5‧‧‧將脈衝雷射光線的平均輸出設定在5W
條件6‧‧‧變數：聚光透鏡的球面像差
遵照上述條件藉由球面像差延伸透鏡533令聚光透鏡532的球面像差變化，觀察形成之潛盾隧道的長度及潛盾隧道的良莠。
上述實驗的結果，確認了下述事項。
由以上實驗結果可知，聚光透鏡532的球面像差在100μm至500μm之間，會形成150μm至620μm的長度良好之潛盾隧道。是故，球面像差延伸透鏡533，理想是設定成將聚光透鏡532的球面像差延伸成100~500μm。
以上已依據圖示之實施形態說明了本發明，但本發明並非僅限定於實施例，在本發明要旨之範圍內可做各種變形。例如，上述實施形態中揭示了從晶圓的表面側照射雷射光線之例子，但亦可從晶圓的背面側照射雷射光線。
5‧‧‧雷射光線照射手段
51‧‧‧脈衝雷射光線振盪手段
511‧‧‧脈衝雷射光線振盪器
512‧‧‧反覆頻率設定手段
52‧‧‧輸出調整手段
53‧‧‧聚光器
531‧‧‧方向變換鏡
532‧‧‧聚光透鏡
533‧‧‧球面像差延伸透鏡
LB‧‧‧脈衝雷射光線
P‧‧‧像差聚光點
P0‧‧‧聚光點

Claims (3)

  1. 一種雷射加工裝置，具備：夾盤平台保持被加工物；及雷射光線照射手段，對被保持於該夾盤平台之被加工物照射脈衝雷射光線；及加工饋送手段，令該夾盤平台與該雷射光線照射手段於加工饋送方向相對地移動；該雷射加工裝置，其特徵為：該雷射光線照射手段，包含：雷射光線振盪手段，振盪對於被加工物具有穿透性的波長之雷射光線；及聚光器，將從該雷射光線振盪手段振盪出的雷射光線予以聚光而照射至被保持於該夾盤平台之被加工物；該聚光器，具有：聚光透鏡，將從該雷射光線振盪手段振盪出的雷射光線予以聚光；及球面像差延伸透鏡，將該聚光透鏡的球面像差予以延伸；從該聚光器對被保持於該夾盤平台之被加工物照射脈衝雷射光線，藉此從被加工物的上面朝向下面形成由細孔與盾護(shield)該細孔的非晶質所構成之潛盾隧道(shield tunnel)。
  2. 如申請專利範圍第1項所述之雷射加工裝置，其中，該球面像差延伸透鏡，將該聚光透鏡的球面像差延伸成100~500μm。
  3. 如申請專利範圍第1項所述之雷射加工裝置，其中，該脈衝雷射光線，峰值能量密度被設定在1TW/cm2~100TW/cm2之範圍。
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