TW201635875A - 附透明導電膜之基板 - Google Patents

附透明導電膜之基板 Download PDF

Info

Publication number
TW201635875A
TW201635875A TW105102551A TW105102551A TW201635875A TW 201635875 A TW201635875 A TW 201635875A TW 105102551 A TW105102551 A TW 105102551A TW 105102551 A TW105102551 A TW 105102551A TW 201635875 A TW201635875 A TW 201635875A
Authority
TW
Taiwan
Prior art keywords
transparent conductive
conductive film
substrate
area
island
Prior art date
Application number
TW105102551A
Other languages
English (en)
Other versions
TWI687141B (zh
Inventor
Masanori Wada
Ken Kashiwadani
Toru Hirao
Original Assignee
Nippon Electric Glass Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Glass Co filed Critical Nippon Electric Glass Co
Publication of TW201635875A publication Critical patent/TW201635875A/zh
Application granted granted Critical
Publication of TWI687141B publication Critical patent/TWI687141B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/90—Other aspects of coatings
    • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/90—Other aspects of coatings
    • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • C03C2217/948—Layers comprising indium tin oxide [ITO]
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • C03C2218/328—Partly or completely removing a coating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/032—Materials
    • H05K2201/0326—Inorganic, non-metallic conductor, e.g. indium-tin oxide [ITO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

本發明提供一種設置於去除了透明導電膜之部分之絕緣膜不易剝離的附透明導電膜之基板。 本發明之附透明導電膜之基板之特徵在於：其係包括基板1、及設置於基板1上且經圖案化之透明導電膜2的附透明導電膜之基板10，且於基板1上形成有藉由圖案化而去除了透明導電膜2之去除區域A1、未去除透明導電膜2之未去除區域A2、及設置於去除區域A1與未去除區域A2之間之交界區域A3，且於交界區域A3形成有透明導電膜2形成為島狀之島狀部分2b。

Description

附透明導電膜之基板
本發明係關於一種附透明導電膜之基板。
已知於電漿顯示器或電致發光元件等中，將用作電極之透明導電膜形成於玻璃基板等基板上，並利用雷射將透明導電膜圖案化(專利文獻1及專利文獻2)。
於藉由圖案化而去除了透明導電膜之部分通常為了鈍化等而設置絕緣膜。
[先前技術文獻] [專利文獻]
[專利文獻1]日本專利特開2007-207554號公報
[專利文獻2]日本專利特開2006-267834號公報
對上述絕緣膜要求不會容易地自基板剝離。
本發明之目的在於提供一種設置於去除了透明導電膜之部分之絕緣膜不易剝離的附透明導電膜之基板。
本發明係一種附透明導電膜之基板，其特徵在於：具備基板、及設置於基板上且經圖案化之透明導電膜，且於基板上形成有藉由圖案化而去除了透明導電膜之去除區域、未去除透明導電膜之未去除區 域、及設置於去除區域與未去除區域之間之交界區域，且於交界區域形成有透明導電膜形成為島狀之島狀部分。
俯視時之島狀部分之面積較佳為交界區域之面積之25%~75%之範圍內。
基板較佳為透明基板。
基板較佳為玻璃基板。
作為圖案化，可列舉利用雷射進行之圖案化。於該情形時，雷射較佳為飛秒雷射。
根據本發明，能夠抑制設置於去除了透明導電膜之部分之絕緣膜之剝離。
1‧‧‧基板
1a‧‧‧主面
2‧‧‧透明導電膜
2a‧‧‧半島狀部分
2b‧‧‧島狀部分
3‧‧‧絕緣膜
10‧‧‧附透明導電膜之基板
A1‧‧‧去除區域
A2‧‧‧未去除區域
A3‧‧‧交界區域
圖1係表示本發明之一實施形態之附透明導電膜之基板的示意性剖視圖。
圖2係表示在圖1所示之實施形態之附透明導電膜之基板設置有絕緣膜之狀態的示意性剖視圖。
圖3係表示本發明之一實施形態之附透明導電膜之基板中之交界區域的掃描式電子顯微鏡照片。
圖4係示意性地表示圖3所示之交界區域之俯視圖。
圖5係對圖4所示之交界區域中之島狀部分附以影線之示意性俯視圖。
以下，對較佳之實施形態進行說明。但，以下之實施形態僅為例示，本發明並不限定於以下之實施形態。又，於各圖式中，有時對實質上具有相同功能之構件附以相同之符號加以參照。
圖1係表示本發明之一實施形態之附透明導電膜之基板的示意性 剖視圖。如圖1所示，本實施形態之附透明導電膜之基板10具備基板1、及設置於基板1之主面1a上之透明導電膜2。透明導電膜2經圖案化。藉由將透明導電膜2圖案化，而於基板1之主面1a上形成藉由圖案化而去除了透明導電膜2之去除區域A1、及未去除透明導電膜2之未去除區域A2。
又，於基板1之主面1a上形成有設置於去除區域A1與未去除區域A2之間之交界區域A3。如圖1所示，於交界區域A3，透明導電膜2之厚度隨著接近去除區域A1而逐漸變薄。
作為透明導電膜2，例如可使用銦錫氧化物(ITO)、鋁鋅氧化物(AZO)、銦鋅氧化物(IZO)、摻氟之錫氧化物(FTO)等具有導電性之複合氧化物薄膜。尤其是可較佳地使用銦錫氧化物。於本實施形態中，由銦錫氧化物形成透明導電膜2。透明導電膜2之厚度較佳為20nm~200nm之範圍內，進而較佳為50nm~150nm之範圍內。
基板1較佳為玻璃基板等透明基板。作為玻璃基板，可使用鈉鈣玻璃、鋁矽酸鹽玻璃、硼矽酸玻璃、無鹼玻璃等。於本實施形態中，使用包含鈉鈣玻璃之玻璃基板。
透明導電膜2之圖案化較佳為利用雷射進行之圖案化。藉由利用雷射將透明導電膜2圖案化，而將透明導電膜2之一部分去除，形成去除區域A1。作為雷射，可使用其波長下之透明導電膜2之吸收率較大之雷射。例如，於ITO膜之情形時，於1000nm以上之波長下，吸收率增大。因此，藉由使用1000nm以上之波長之雷射進行圖案化，能夠利用雷射照射去除ITO膜，形成去除區域A1。藉由該圖案化，形成去除區域A1，並且於其周邊形成交界區域A3。
雷射之波長只要為透明導電膜2於該波長下具有較大之吸收率者，則並無特別限定。雷射之波長例如較佳為1000nm以上，更佳為1300nm以上，進而較佳為1500nm以上。雷射之波長之上限值並無特 別限定，雷射之波長一般為2000nm以下。
雷射較佳為10微微秒以下之脈衝雷射，更佳為1微微秒以下之超短脈衝雷射，尤佳為飛秒雷射。藉由使用此種脈衝寬度較小之雷射，能夠產生多光子吸收現象，不使熱擴散至周邊部分而進行圖案化。
雷射之點徑較佳為去除區域A1於y方向上之寬度之0.2倍~5倍之範圍內，進而較佳為0.5倍~2倍之範圍內。去除區域A1於y方向上之寬度之尺寸一般較佳為3μm~50μm之範圍內，進而較佳為5μm~20μm之範圍內。於去除區域A1較寬之情形時，可操作複數次進行雷射，或使用複數之雷射，使雷射之點略微重疊而進行圖案化。又，交界區域A3於y方向上之寬度之尺寸一般較佳為0.3μm~10μm之範圍內，進而較佳為0.5μm~5μm之範圍內。
再者，雷射一般係自透明導電膜2側向透明導電膜2之厚度方向(z方向)照射。
圖1所示之實施形態之附透明導電膜之基板10例如可用作有機電致發光元件之電極基板。於該情形時，於附透明導電膜之基板10上設置有機電致發光層。又，於該情形時，為了提高自有機電致發光層之光之提取效率，亦可於基板1與透明導電膜2之間設置折射率高於基板1之基底玻璃層。
圖2係表示在圖1所示之實施形態之附透明導電膜之基板設置有絕緣膜之狀態的示意性剖視圖。如圖2所示，以覆蓋附透明導電膜之基板10之去除區域A1中之基板1之主面1a及交界區域A3上之方式設置絕緣膜3。絕緣膜3主要係為了鈍化等而設置。
絕緣膜3可由氮化矽、氧化矽、氮氧化矽、氧化鋁等無機材料、或環氧樹脂、丙烯酸系樹脂、胺基甲酸酯樹脂等有機材料形成。
圖3係表示本發明之一實施形態之附透明導電膜之基板中之交界區域的掃描式電子顯微鏡照片。圖4及圖5係示意性地表示圖3所示之 交界區域之俯視圖。再者，圖5係對圖4所示之交界區域中之島狀部分附以影線之示意性俯視圖。圖3、圖4及圖5表示俯視下、即自z方向觀察之交界區域A3以及其附近之去除區域A1及未去除區域A2。又，圖3、圖4及圖5表示設置絕緣膜3前之圖1所示之狀態。
如圖3、圖4及圖5所示，於本發明中，於交界區域A3形成有以自未去除區域A2連續地向y方向延伸之方式形成之包含透明導電膜2之半島狀部分2a、及與未去除區域A2實質上分離地形成之包含透明導電膜2之島狀部分2b。再者，包含透明導電膜2之島狀部分2b可藉由使用具有對應於透明導電膜2之材質等之波長或脈衝寬度之雷射於特定之條件下圖案化，從而形成於交界區域A3。如此，藉由於交界區域A3形成包含透明導電膜2之島狀部分2b，能夠抑制設置於其上之絕緣膜3之剝離。能夠抑制絕緣膜3之剝離之原因認為如以下所述。
即，若於島狀部分2b上設置絕緣膜3，則絕緣膜3以與島狀部分2b周圍之側壁部相接之方式形成。因此，絕緣膜3以陷入至鄰接之島狀部分2b之間之方式形成。又，島狀部分2b以陷入至絕緣膜3之狀態存在。因此，認為能夠發揮強力之投錨效應，能夠抑制絕緣膜3之剝離。再者，為了有效地抑制絕緣膜3之剝離，俯視時之島狀部分2b之面積(附以影線之部分之面積)較佳為交界區域A3之面積之25%~75%之範圍內。若島狀部分2b之面積少於上述範圍，則陷入至絕緣膜3之島狀部分2b變少，有無法獲得抑制絕緣膜3之剝離之效果的情況。又，若島狀部分2b之面積多於上述範圍，則陷入至島狀部分2b之絕緣膜3之部分變少，有無法獲得抑制絕緣膜3之剝離之效果的情況。島狀部分2b之面積更佳為交界區域A3之面積之40%~60%之範圍內。又，1個島狀部分2b之大小以投影面積直徑計，較佳為0.1μm~0.6μm之範圍內，進而較佳為0.1μm~0.3μm之範圍內。
再者，未去除區域A2與交界區域A3之交界之位置如圖4及圖5所 示，係透明導電膜2被去除而開始露出主面1a之位置，交界區域A3與去除區域A1之交界之位置係島狀部分2b實質上逐漸不存在之位置。
再者，島狀部分2b之面積之比率較佳為於交界區域A3之面積為0.7μm2~25μm2之範圍內之視野下求出。
又，作為用以將島狀部分2b之面積設為本發明之範圍內之圖案化條件，較佳為使用飛秒雷射。
1‧‧‧基板
1a‧‧‧主面
2‧‧‧透明導電膜
10‧‧‧附透明導電膜之基板
A1‧‧‧去除區域
A2‧‧‧未去除區域
A3‧‧‧交界區域

Claims (6)

  1. 一種附透明導電膜之基板，其係包括基板、及設置於上述基板上且經圖案化之透明導電膜者，且於上述基板上形成有藉由圖案化而去除了上述透明導電膜之去除區域、未去除上述透明導電膜之未去除區域、及設置於上述去除區域與上述未去除區域之間之交界區域，且於上述交界區域形成有上述透明導電膜形成為島狀之島狀部分。
  2. 如請求項1之附透明導電膜之基板，其中俯視時之上述島狀部分之面積為上述交界區域之面積之25%~75%之範圍內。
  3. 如請求項1或2之附透明導電膜之基板，其中上述基板為透明基板。
  4. 如請求項1至3中任一項之附透明導電膜之基板，其中上述基板為玻璃基板。
  5. 如請求項1至4中任一項之附透明導電膜之基板，其中上述圖案化係藉由雷射而進行之圖案化。
  6. 如請求項5之附透明導電膜之基板，其中上述雷射為飛秒雷射。
TW105102551A 2015-03-31 2016-01-27 附透明導電膜之基板 TWI687141B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-071470 2015-03-31
JP2015071470A JP6519277B2 (ja) 2015-03-31 2015-03-31 透明導電膜付基板

Publications (2)

Publication Number Publication Date
TW201635875A true TW201635875A (zh) 2016-10-01
TWI687141B TWI687141B (zh) 2020-03-01

Family

ID=57005917

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105102551A TWI687141B (zh) 2015-03-31 2016-01-27 附透明導電膜之基板

Country Status (7)

Country Link
US (1) US10187980B2 (zh)
EP (1) EP3280229A4 (zh)
JP (1) JP6519277B2 (zh)
KR (1) KR102381105B1 (zh)
CN (1) CN107211506B (zh)
TW (1) TWI687141B (zh)
WO (1) WO2016157930A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI766037B (zh) * 2017-07-21 2022-06-01 日商迪思科股份有限公司 靜電吸盤板的製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6998703B2 (ja) 2017-08-29 2022-02-04 古河電気工業株式会社 透明導電膜付基板の製造方法、透明導電膜付基板及び太陽電池
CN110561858B (zh) * 2019-09-18 2021-03-16 福耀玻璃工业集团股份有限公司 一种夹层加热玻璃

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5130971A (ja) * 1974-09-10 1976-03-16 Seiko Instr & Electronics Tomeidenkyokunopataankeiseiho
US4713518A (en) 1984-06-08 1987-12-15 Semiconductor Energy Laboratory Co., Ltd. Electronic device manufacturing methods
JPS6189636A (ja) * 1984-10-08 1986-05-07 Semiconductor Energy Lab Co Ltd 光加工方法
US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
JP3556990B2 (ja) * 1995-02-13 2004-08-25 出光興産株式会社 有機エレクトロルミネッセンス素子の微細パターン化方法及びそれより得られた素子
US7073246B2 (en) 1999-10-04 2006-07-11 Roche Diagnostics Operations, Inc. Method of making a biosensor
JP4738860B2 (ja) 2005-03-25 2011-08-03 株式会社リコー エレクトロクロミック表示素子
US7867636B2 (en) * 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4803726B2 (ja) 2006-02-01 2011-10-26 旭硝子株式会社 電子回路及びその製造方法
US20080029152A1 (en) * 2006-08-04 2008-02-07 Erel Milshtein Laser scribing apparatus, systems, and methods
JP4872620B2 (ja) * 2006-11-17 2012-02-08 Ｔｄｋ株式会社 透明導電フィルムの製造方法
JP5571870B2 (ja) * 2007-09-21 2014-08-13 株式会社東芝 極微細構造を有する光透過型金属電極およびその製造方法
JP5333822B2 (ja) * 2008-06-23 2013-11-06 日立化成株式会社 めっき用導電性基材、それを用いた導体層パターン若しくは導体層パターン付き基材の製造方法、導体層パターン付き基材及び電磁波遮蔽部材
US8518277B2 (en) * 2009-02-12 2013-08-27 Tpk Touch Solutions Inc. Plastic capacitive touch screen and method of manufacturing same
JP6047994B2 (ja) 2012-01-24 2016-12-21 デクセリアルズ株式会社 透明導電性素子およびその製造方法、入力装置、電子機器、ならびに透明導電層の加工方法
JP5293843B2 (ja) 2012-01-24 2013-09-18 デクセリアルズ株式会社 透明導電性素子、入力装置、電子機器および透明導電性素子作製用原盤
CN103309528A (zh) * 2012-03-16 2013-09-18 瀚宇彩晶股份有限公司 触控面板及其制作方法
JP2015185512A (ja) * 2014-03-26 2015-10-22 信越ポリマー株式会社 導電パターン形成基板及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI766037B (zh) * 2017-07-21 2022-06-01 日商迪思科股份有限公司 靜電吸盤板的製造方法

Also Published As

Publication number Publication date
KR102381105B1 (ko) 2022-03-30
EP3280229A4 (en) 2018-10-31
JP6519277B2 (ja) 2019-05-29
US10187980B2 (en) 2019-01-22
CN107211506B (zh) 2019-05-14
KR20170133313A (ko) 2017-12-05
TWI687141B (zh) 2020-03-01
CN107211506A (zh) 2017-09-26
JP2016190392A (ja) 2016-11-10
EP3280229A1 (en) 2018-02-07
US20180007786A1 (en) 2018-01-04
WO2016157930A1 (ja) 2016-10-06

Similar Documents

Publication Publication Date Title
KR102633850B1 (ko) 디스플레이 장치 및 이의 제조 방법
KR20190107253A (ko) 표시장치 및 그의 제조방법
KR102450339B1 (ko) 유기 발광 장치
TWI687141B (zh) 附透明導電膜之基板
US20170338441A1 (en) Display device and manufacturing method thereof
CN111344865A (zh) Tft阵列结构及其绑定区、绑定区的制作方法
TWI672712B (zh) 附透明導電膜之玻璃基板及其製造方法
JP2018092912A5 (zh)
KR102175285B1 (ko) 표시 패널 및 표시 패널의 제조 방법
WO2018179216A1 (ja) Ｅｌデバイスの製造方法
TWM470319U (zh) 觸控面板
KR102207224B1 (ko) 표시 장치 및 이를 제조하는 방법
US9576987B2 (en) Display substrate and method of manufacturing the display substrate
US8492967B2 (en) Light emitting device and display panel
KR20210086353A (ko) 표시 장치
JP2016048706A (ja) アレイ基板およびその製造方法
JP2015220091A (ja) 発光装置
CN113193139B (zh) 显示面板
JP2014041999A5 (zh)
WO2018186377A1 (ja) 発光装置の製造方法及び発光装置
CN104064685B (zh) 柔性显示基板及其制造方法和柔性显示装置
JP2016072283A (ja) 発光装置
JP2015220090A (ja) 発光装置
KR20210012415A (ko) 발광 표시 장치
CN108470843A (zh) 一种oled面板、器件及其制作工艺

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees