WO2016157930A1 - 透明導電膜付基板 - Google Patents
透明導電膜付基板 Download PDFInfo
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- WO2016157930A1 WO2016157930A1 PCT/JP2016/050754 JP2016050754W WO2016157930A1 WO 2016157930 A1 WO2016157930 A1 WO 2016157930A1 JP 2016050754 W JP2016050754 W JP 2016050754W WO 2016157930 A1 WO2016157930 A1 WO 2016157930A1
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- transparent conductive
- conductive film
- substrate
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- island
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
- C03C2217/948—Layers comprising indium tin oxide [ITO]
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/032—Materials
- H05K2201/0326—Inorganic, non-metallic conductor, e.g. indium-tin oxide [ITO]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present invention relates to a substrate with a transparent conductive film.
- a transparent conductive film used as an electrode is formed on a substrate such as a glass substrate in a plasma display, an electroluminescence element, or the like, and the transparent conductive film is patterned with a laser (Patent Document 1 and Patent Document 2). ).
- an insulating film is usually provided for passivation or the like.
- An object of the present invention is to provide a substrate with a transparent conductive film in which an insulating film provided in a portion where the transparent conductive film has been removed is difficult to peel off.
- the present invention is a substrate with a transparent conductive film provided with a substrate and a patterned transparent conductive film provided on the substrate, wherein the transparent conductive film is removed on the substrate by patterning, and a transparent region.
- a non-removed region from which the conductive film has not been removed and a boundary region provided between the removed region and the non-removed region are formed, and an island-shaped portion in which the transparent conductive film is formed in an island shape in the boundary region It is characterized by being formed.
- the area of the island portion when viewed in plan is in the range of 25% to 75% of the area of the boundary region.
- the substrate is preferably a transparent substrate.
- the substrate is preferably a glass substrate.
- Patterning with laser is an example of patterning.
- the laser is preferably a femtosecond laser.
- the present invention it is possible to suppress peeling of the insulating film provided in the portion where the transparent conductive film is removed.
- FIG. 1 is a schematic cross-sectional view showing a substrate with a transparent conductive film according to an embodiment of the present invention.
- FIG. 2 is a schematic cross-sectional view showing a state where an insulating film is provided on the substrate with a transparent conductive film of the embodiment shown in FIG.
- FIG. 3 is a scanning electron micrograph showing the boundary region in the substrate with a transparent conductive film according to one embodiment of the present invention.
- FIG. 4 is a plan view schematically showing the boundary region shown in FIG.
- FIG. 5 is a schematic plan view in which island portions in the boundary region shown in FIG. 4 are hatched.
- FIG. 1 is a schematic cross-sectional view showing a substrate with a transparent conductive film according to an embodiment of the present invention.
- the substrate 10 with a transparent conductive film of the present embodiment includes a substrate 1 and a transparent conductive film 2 provided on the main surface 1 a of the substrate 1.
- the transparent conductive film 2 is patterned.
- a boundary region A3 provided between the removal region A1 and the non-removal region A2 is formed on the main surface 1a of the substrate 1. As shown in FIG. 1, in the boundary region A3, the thickness of the transparent conductive film 2 is gradually reduced as it approaches the removal region A1.
- the transparent conductive film 2 for example, indium tin oxide (ITO), aluminum zinc oxide (AZO), indium zinc oxide (IZO), a composite having conductivity such as fluorine-doped tin oxide (FTO) is used.
- An oxide thin film can be used.
- indium tin oxide is preferably used.
- the transparent conductive film 2 is formed from indium tin oxide. The thickness of the transparent conductive film 2 is preferably in the range of 20 nm to 200 nm, and more preferably in the range of 50 nm to 150 nm.
- the substrate 1 is preferably a transparent substrate such as a glass substrate.
- a transparent substrate such as a glass substrate.
- soda-lime glass, aluminosilicate glass, borosilicate glass, alkali-free glass, or the like can be used.
- a glass substrate made of soda lime glass is used.
- the patterning of the transparent conductive film 2 is preferably laser patterning.
- a part of the transparent conductive film 2 is removed to form a removal region A1.
- the laser a laser having a large absorption rate of the transparent conductive film 2 at the wavelength is used.
- the absorptance increases at a wavelength of 1000 nm or more.
- the ITO film can be removed by laser irradiation to form the removal region A1.
- a removal region A1 is formed, and a boundary region A3 is formed around the removal region A1.
- the wavelength of the laser is not particularly limited as long as the transparent conductive film 2 has a large absorption rate at the wavelength.
- the wavelength of the laser is, for example, preferably 1000 nm or more, more preferably 1300 nm or more, and further preferably 1500 nm or more.
- the upper limit of the laser wavelength is not particularly limited, but the laser wavelength is generally 2000 nm or less.
- the laser is preferably a pulse laser of 10 picoseconds or less, more preferably an ultrashort pulse laser of 1 picosecond or less, and particularly preferably a femtosecond laser.
- a pulse laser of 10 picoseconds or less, more preferably an ultrashort pulse laser of 1 picosecond or less, and particularly preferably a femtosecond laser.
- the laser spot diameter is preferably in the range of 0.2 to 5 times the width of the removal region A1 in the y direction, and more preferably in the range of 0.5 to 2 times.
- the width dimension in the y direction of the removal region A1 is preferably in the range of 3 ⁇ m to 50 ⁇ m, and more preferably in the range of 5 ⁇ m to 20 ⁇ m.
- patterning may be performed by operating the laser a plurality of times or by slightly overlapping the laser spots using a plurality of lasers.
- the width dimension in the y direction of the boundary region A3 is generally preferably in the range of 0.3 ⁇ m to 10 ⁇ m, and more preferably in the range of 0.5 ⁇ m to 5 ⁇ m.
- the laser is generally irradiated from the transparent conductive film 2 side in the thickness direction (z direction) of the transparent conductive film 2.
- an organic electroluminescence layer is provided on the substrate 10 with a transparent conductive film.
- a base glass layer having a higher refractive index than that of the substrate 1 is provided between the substrate 1 and the transparent conductive film 2 in order to improve the light extraction efficiency from the organic electroluminescence layer. Good.
- FIG. 2 is a schematic cross-sectional view showing a state where an insulating film is provided on the substrate with a transparent conductive film of the embodiment shown in FIG.
- the insulating film 3 is provided so as to cover the main surface 1a of the substrate 1 and the boundary region A3 in the removal region A1 of the substrate 10 with a transparent conductive film.
- the insulating film 3 is provided mainly for the purpose of passivation and the like.
- the insulating film 3 can be formed of an inorganic material such as silicon nitride, silicon oxide, silicon oxynitride, or aluminum oxide, or an organic material such as epoxy resin, acrylic resin, or urethane resin.
- FIG. 3 is a scanning electron micrograph showing the boundary region in the substrate with a transparent conductive film according to one embodiment of the present invention.
- 4 and 5 are plan views schematically showing the boundary region shown in FIG.
- FIG. 5 is a schematic plan view in which island portions in the boundary region shown in FIG. 4 are hatched.
- 3 show the boundary region A3 in plan view, that is, the removal region A1 and the non-removal region A2 near the boundary region A3.
- 3 show the state shown in FIG. 1 before the insulating film 3 is provided.
- a peninsular portion made of the transparent conductive film 2 formed so as to continuously extend from the non-removed region A ⁇ b> 2 in the y direction. 2a and an island-like portion 2b made of the transparent conductive film 2 formed substantially separated from the non-removed region A2.
- the island-like portion 2b made of the transparent conductive film 2 is formed in the boundary region A3 by patterning under a predetermined condition using a laser having a wavelength and a pulse width corresponding to the material of the transparent conductive film 2 and the like. Can do.
- the insulating film 3 when the insulating film 3 is provided on the island-shaped portion 2b, the insulating film 3 is formed so as to be in contact with the side wall portion around the island-shaped portion 2b. For this reason, the insulating film 3 is formed so as to bite between the adjacent island portions 2b. Further, the island-like portion 2b exists in the state in which the insulating film 3 is bitten. For this reason, it is thought that a strong anchor effect can be exhibited and peeling of the insulating film 3 can be suppressed. In order to effectively suppress the peeling of the insulating film 3, the area of the island-like portion 2b when viewed in plan (the hatched portion area) is in the range of 25% to 75% of the area of the boundary region A3.
- the area of the island-shaped portion 2b is smaller than the above range, the island-shaped portion 2b that bites into the insulating film 3 decreases, and the effect of suppressing the peeling of the insulating film 3 may not be obtained. Even if the area of the island-shaped portion 2b is larger than the above range, the portion of the insulating film 3 that bites into the island-shaped portion 2b decreases, and the effect of suppressing the peeling of the insulating film 3 may not be obtained.
- the area of the island-like portion 2b is more preferably in the range of 40% to 60% of the area of the boundary region A3.
- the size of one island-like portion 2b is an equivalent circle diameter, preferably in the range of 0.1 ⁇ m to 0.6 ⁇ m, and more preferably in the range of 0.1 ⁇ m to 0.3 ⁇ m.
- the position of the boundary between the non-removed area A2 and the boundary area A3 is a position where the main surface 1a begins to be exposed after the transparent conductive film 2 is removed, and is removed from the boundary area A3.
- the position of the boundary of the region A1 is a position where the island-like portion 2b substantially does not exist.
- the ratio of the area of the island-like portion 2b is preferably obtained in a visual field where the area of the boundary region A3 is in the range of 0.7 ⁇ m 2 to 25 ⁇ m 2 .
- a femtosecond laser as a patterning condition for setting the area of the island-shaped portion 2b within the range of the present invention.
Abstract
Description
1a…主面
2…透明導電膜
2a…半島状部分
2b…島状部分
3…絶縁膜
10…透明導電膜付基板
A1…除去領域
A2…非除去領域
A3…境界領域
Claims (6)
- 基板と、前記基板上に設けられ、パターニングされた透明導電膜とを備える透明導電膜付基板であって、
前記基板の上に、前記透明導電膜がパターニングにより除去された除去領域と、前記透明導電膜が除去されていない非除去領域と、前記除去領域と前記非除去領域の間に設けられた境界領域とが形成されてなり、
前記境界領域において、前記透明導電膜が島状に形成された島状部分が形成されてなる、透明導電膜付基板。 - 平面視したときの前記島状部分の面積が、前記境界領域の面積の25%~75%の範囲内である、請求項1に記載の透明導電膜付基板。
- 前記基板が、透明基板である、請求項1または2に記載の透明導電膜付基板。
- 前記基板が、ガラス基板である、請求項1~3のいずれか一項に記載の透明導電膜付基板。
- 前記パターニングが、レーザーによるパターニングである、請求項1~4のいずれか一項に記載の透明導電膜付基板。
- 前記レーザーが、フェムト秒レーザーである、請求項5に記載の透明導電膜付基板。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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KR1020177016908A KR102381105B1 (ko) | 2015-03-31 | 2016-01-13 | 투명 도전막이 형성된 기판 |
CN201680004942.4A CN107211506B (zh) | 2015-03-31 | 2016-01-13 | 带透明导电膜的基板 |
US15/539,722 US10187980B2 (en) | 2015-03-31 | 2016-01-13 | Substrate provided with transparent conductive film |
EP16771816.2A EP3280229A4 (en) | 2015-03-31 | 2016-01-13 | Substrate provided with transparent conductive film |
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JP2015-071470 | 2015-03-31 | ||
JP2015071470A JP6519277B2 (ja) | 2015-03-31 | 2015-03-31 | 透明導電膜付基板 |
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US (1) | US10187980B2 (ja) |
EP (1) | EP3280229A4 (ja) |
JP (1) | JP6519277B2 (ja) |
KR (1) | KR102381105B1 (ja) |
CN (1) | CN107211506B (ja) |
TW (1) | TWI687141B (ja) |
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CN109285806A (zh) * | 2017-07-21 | 2019-01-29 | 株式会社迪思科 | 静电卡盘板的制造方法 |
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JP6998703B2 (ja) * | 2017-08-29 | 2022-02-04 | 古河電気工業株式会社 | 透明導電膜付基板の製造方法、透明導電膜付基板及び太陽電池 |
CN110561858B (zh) * | 2019-09-18 | 2021-03-16 | 福耀玻璃工业集团股份有限公司 | 一种夹层加热玻璃 |
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- 2016-01-13 EP EP16771816.2A patent/EP3280229A4/en not_active Withdrawn
- 2016-01-13 CN CN201680004942.4A patent/CN107211506B/zh not_active Expired - Fee Related
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CN109285806A (zh) * | 2017-07-21 | 2019-01-29 | 株式会社迪思科 | 静电卡盘板的制造方法 |
CN109285806B (zh) * | 2017-07-21 | 2023-12-19 | 株式会社迪思科 | 静电卡盘板的制造方法 |
Also Published As
Publication number | Publication date |
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JP2016190392A (ja) | 2016-11-10 |
CN107211506B (zh) | 2019-05-14 |
US20180007786A1 (en) | 2018-01-04 |
KR102381105B1 (ko) | 2022-03-30 |
EP3280229A4 (en) | 2018-10-31 |
TW201635875A (zh) | 2016-10-01 |
EP3280229A1 (en) | 2018-02-07 |
CN107211506A (zh) | 2017-09-26 |
KR20170133313A (ko) | 2017-12-05 |
US10187980B2 (en) | 2019-01-22 |
TWI687141B (zh) | 2020-03-01 |
JP6519277B2 (ja) | 2019-05-29 |
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