CN111344865A - Tft阵列结构及其绑定区、绑定区的制作方法 - Google Patents

Tft阵列结构及其绑定区、绑定区的制作方法 Download PDF

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Publication number
CN111344865A
CN111344865A CN201780096681.8A CN201780096681A CN111344865A CN 111344865 A CN111344865 A CN 111344865A CN 201780096681 A CN201780096681 A CN 201780096681A CN 111344865 A CN111344865 A CN 111344865A
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China
Prior art keywords
layer
metal
substrate
binding region
light
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CN201780096681.8A
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林致远
蔡武卫
陈国峰
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Shenzhen Royole Technologies Co Ltd
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Shenzhen Royole Technologies Co Ltd
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Publication of CN111344865A publication Critical patent/CN111344865A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier

Abstract

一种TFT阵列结构及其绑定区、绑定区的制作方法，绑定区包括第一基板(10)、设置在第一基板(10)上的金属叠层(20)、设置在第一基板(10)上并覆盖金属叠层(20)边缘的绝缘叠层(30)、以及设置在金属叠层(20)上的透光导电层(40)；金属叠层(20)包括具有Cu层的第一金属层(21)；透光导电层(40)覆盖在第一金属层(21)上。在TFT阵列结构的绑定区中，通过透光导电层(40)在金属层上的设置，对金属层进行保护，避免金属层中的Cu金属氧化腐蚀。

Description

PCT国内申请，说明书已公开。

Claims (1)

  1. PCT国内申请，权利要求书已公开。
CN201780096681.8A 2017-11-16 2017-11-16 Tft阵列结构及其绑定区、绑定区的制作方法 Pending CN111344865A (zh)

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PCT/CN2017/111372 WO2019095214A1 (zh) 2017-11-16 2017-11-16 Tft阵列结构及其绑定区、绑定区的制作方法

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CN111344865A true CN111344865A (zh) 2020-06-26

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CN (1) CN111344865A (zh)
TW (1) TW201924071A (zh)
WO (1) WO2019095214A1 (zh)

Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN112071862A (zh) * 2020-09-03 2020-12-11 Tcl华星光电技术有限公司 发光面板及其制备方法、显示面板
CN114284413A (zh) * 2021-12-30 2022-04-05 江苏第三代半导体研究院有限公司 半导体器件的电极制作方法及半导体器件

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110286795B (zh) * 2019-06-27 2022-11-22 业成科技（成都）有限公司 触控装置
CN112542086B (zh) * 2019-09-23 2023-03-31 上海和辉光电股份有限公司 显示面板及显示装置
CN112736178B (zh) * 2020-12-23 2022-04-26 惠州市华星光电技术有限公司 mini-LED装置及制作方法
CN112820764B (zh) * 2021-01-15 2022-09-23 昆山国显光电有限公司 显示屏及显示屏的制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102569293A (zh) * 2011-11-21 2012-07-11 友达光电股份有限公司 薄膜晶体管阵列及其线路结构
CN104576659A (zh) * 2015-02-09 2015-04-29 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
CN104752465A (zh) * 2013-12-30 2015-07-01 昆山工研院新型平板显示技术中心有限公司 顶发射有机发光显示器件的阵列基板及其制备方法

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JPH0980416A (ja) * 1995-09-13 1997-03-28 Sharp Corp 液晶表示装置
KR101572976B1 (ko) * 2010-01-19 2015-12-01 삼성디스플레이 주식회사 박막 트랜지스터 표시판 제조 방법
CN102738205A (zh) * 2012-07-04 2012-10-17 信利半导体有限公司 一种有机电致发光显示器及其制作方法
CN103744213B (zh) * 2013-12-25 2016-08-17 合肥京东方光电科技有限公司 一种阵列基板及其制备方法
CN104952791A (zh) * 2015-06-26 2015-09-30 深圳市华星光电技术有限公司 Amoled显示器件的制作方法及其结构

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102569293A (zh) * 2011-11-21 2012-07-11 友达光电股份有限公司 薄膜晶体管阵列及其线路结构
CN104752465A (zh) * 2013-12-30 2015-07-01 昆山工研院新型平板显示技术中心有限公司 顶发射有机发光显示器件的阵列基板及其制备方法
CN104576659A (zh) * 2015-02-09 2015-04-29 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112071862A (zh) * 2020-09-03 2020-12-11 Tcl华星光电技术有限公司 发光面板及其制备方法、显示面板
CN114284413A (zh) * 2021-12-30 2022-04-05 江苏第三代半导体研究院有限公司 半导体器件的电极制作方法及半导体器件

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WO2019095214A1 (zh) 2019-05-23
TW201924071A (zh) 2019-06-16

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Application publication date: 20200626