TW201627544A - 獨立式氮化鎵基板、發光元件及此等之製造方法 - Google Patents
獨立式氮化鎵基板、發光元件及此等之製造方法 Download PDFInfo
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- TW201627544A TW201627544A TW104120459A TW104120459A TW201627544A TW 201627544 A TW201627544 A TW 201627544A TW 104120459 A TW104120459 A TW 104120459A TW 104120459 A TW104120459 A TW 104120459A TW 201627544 A TW201627544 A TW 201627544A
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- Prior art keywords
- gallium nitride
- free
- substrate
- standing
- nitride substrate
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Landscapes
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- Crystals, And After-Treatments Of Crystals (AREA)
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
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| CN105830237B (zh) * | 2013-12-18 | 2019-09-06 | 日本碍子株式会社 | 发光元件用复合基板及其制造方法 |
| CN107208312B (zh) | 2015-01-29 | 2019-10-01 | 日本碍子株式会社 | 自立基板、功能元件及其制造方法 |
| WO2017057271A1 (ja) | 2015-09-30 | 2017-04-06 | 日本碍子株式会社 | エピタキシャル成長用配向アルミナ基板 |
| JP6681406B2 (ja) * | 2015-09-30 | 2020-04-15 | 日本碍子株式会社 | エピタキシャル成長用配向アルミナ基板 |
| CN108349823B (zh) | 2015-11-16 | 2021-06-01 | 日本碍子株式会社 | 取向烧结体的制造方法 |
| EP3421648B1 (en) | 2016-02-25 | 2023-01-25 | NGK Insulators, Ltd. | Polycrystalline gallium nitride self-supported substrate and light emitting element using the same |
| JP6688109B2 (ja) | 2016-02-25 | 2020-04-28 | 日本碍子株式会社 | 面発光素子、外部共振器型垂直面発光レーザー、および面発光素子の製造方法 |
| JP6812413B2 (ja) * | 2016-03-29 | 2021-01-13 | 日本碍子株式会社 | 自立基板および積層体 |
| JP6639317B2 (ja) * | 2016-04-21 | 2020-02-05 | 日本碍子株式会社 | １３族元素窒化物結晶の製造方法および種結晶基板 |
| JP6846913B2 (ja) * | 2016-11-11 | 2021-03-24 | 日本碍子株式会社 | 広波長域発光素子および広波長域発光素子の作製方法 |
| TWI621249B (zh) | 2017-03-27 | 2018-04-11 | 英屬開曼群島商錼創科技股份有限公司 | 微型發光二極體及顯示面板 |
| TWI632673B (zh) * | 2017-07-11 | 2018-08-11 | 錼創科技股份有限公司 | 微型發光元件與顯示裝置 |
| US11309455B2 (en) | 2017-08-24 | 2022-04-19 | Ngk Insulators, Ltd. | Group 13 element nitride layer, free-standing substrate and functional element |
| DE112017007796B4 (de) | 2017-08-24 | 2023-09-14 | Ngk Insulators, Ltd. | Schichten eines Kristalls aus einem Nitrid eines Elements der Gruppe 13, selbsttragende Substrate, funktionelle Vorrichtungen und Verbundsubstrate |
| JP6854903B2 (ja) | 2017-08-24 | 2021-04-07 | 日本碍子株式会社 | １３族元素窒化物層、自立基板および機能素子 |
| WO2019039189A1 (ja) | 2017-08-24 | 2019-02-28 | 日本碍子株式会社 | １３族元素窒化物層、自立基板および機能素子 |
| JP7185123B2 (ja) * | 2017-12-26 | 2022-12-07 | 日亜化学工業株式会社 | 光学部材及び発光装置 |
| JP7147644B2 (ja) * | 2019-03-18 | 2022-10-05 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体の製造方法 |
| DE112020005284T5 (de) * | 2019-11-21 | 2022-08-11 | Ngk Insulators, Ltd. | Kristallschicht eines nitrids eines elements der gruppe 13, freistehendes substrat und funktionelles element |
| CN111607825A (zh) * | 2020-06-02 | 2020-09-01 | 无锡吴越半导体有限公司 | 衬底、基于所述衬底的自支撑GaN单晶及其制备方法 |
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| JP3864870B2 (ja) * | 2001-09-19 | 2007-01-10 | 住友電気工業株式会社 | 単結晶窒化ガリウム基板およびその成長方法並びにその製造方法 |
| US7221037B2 (en) * | 2003-01-20 | 2007-05-22 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing group III nitride substrate and semiconductor device |
| JP2004359495A (ja) * | 2003-06-04 | 2004-12-24 | Ngk Insulators Ltd | エピタキシャル膜用アルミナ基板 |
| JP4341702B2 (ja) * | 2007-06-21 | 2009-10-07 | 住友電気工業株式会社 | Ｉｉｉ族窒化物系半導体発光素子 |
| JP4981602B2 (ja) * | 2007-09-25 | 2012-07-25 | パナソニック株式会社 | 窒化ガリウム基板の製造方法 |
| JP2009091175A (ja) * | 2007-10-04 | 2009-04-30 | Sumitomo Electric Ind Ltd | ＧａＮエピタキシャル基板、半導体デバイス、ＧａＮエピタキシャル基板及び半導体デバイスの製造方法 |
| US9012253B2 (en) * | 2009-12-16 | 2015-04-21 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116364819A (zh) * | 2023-05-31 | 2023-06-30 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法、led |
| CN116364819B (zh) * | 2023-05-31 | 2023-12-15 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法、led |
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| TWI563133B (enrdf_load_stackoverflow) | 2016-12-21 |
| JP2016001738A (ja) | 2016-01-07 |
| JP5770905B1 (ja) | 2015-08-26 |
| TW201708635A (zh) | 2017-03-01 |
| JP2015199635A (ja) | 2015-11-12 |
| TWI662163B (zh) | 2019-06-11 |
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