TW201621977A - 改變氣體流動模式的裝置及晶圓處理方法和設備 - Google Patents
改變氣體流動模式的裝置及晶圓處理方法和設備 Download PDFInfo
- Publication number
- TW201621977A TW201621977A TW104127779A TW104127779A TW201621977A TW 201621977 A TW201621977 A TW 201621977A TW 104127779 A TW104127779 A TW 104127779A TW 104127779 A TW104127779 A TW 104127779A TW 201621977 A TW201621977 A TW 201621977A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- wafer
- moving ring
- opening
- ring
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title claims abstract description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 37
- 125000004122 cyclic group Chemical group 0.000 claims 1
- 239000012634 fragment Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 30
- 230000008569 process Effects 0.000 abstract description 29
- 230000000694 effects Effects 0.000 abstract description 11
- 230000008859 change Effects 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 230000006978 adaptation Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000007142 ring opening reaction Methods 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410749979.2A CN105742203B (zh) | 2014-12-10 | 2014-12-10 | 一种改变气体流动模式的装置及晶圆处理方法和设备 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201621977A true TW201621977A (zh) | 2016-06-16 |
| TWI560742B TWI560742B (enExample) | 2016-12-01 |
Family
ID=56111862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104127779A TW201621977A (zh) | 2014-12-10 | 2015-08-25 | 改變氣體流動模式的裝置及晶圓處理方法和設備 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10529577B2 (enExample) |
| KR (1) | KR101735958B1 (enExample) |
| CN (1) | CN105742203B (enExample) |
| TW (1) | TW201621977A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI718932B (zh) * | 2019-04-25 | 2021-02-11 | 南韓商吉佳藍科技股份有限公司 | 排出流動調節部及其等離子處理裝置及等離子處理方法 |
| US12297535B2 (en) | 2019-06-06 | 2025-05-13 | Picosun Oy | Substrate processing methods and apparatus |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6523714B2 (ja) * | 2015-03-05 | 2019-06-05 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US20190287835A1 (en) * | 2018-02-01 | 2019-09-19 | Yield Engineering Systems, Inc. | Interchangeable Edge Rings For Stabilizing Wafer Placement And System Using Same |
| KR102516885B1 (ko) * | 2018-05-10 | 2023-03-30 | 삼성전자주식회사 | 증착 장비 및 이를 이용한 반도체 장치 제조 방법 |
| CN110890260B (zh) * | 2018-09-07 | 2022-11-04 | 中微半导体设备(上海)股份有限公司 | 一种动态控制气体流动模式的装置及晶圆处理方法和设备 |
| CN110211860B (zh) * | 2019-06-26 | 2021-07-13 | 南京中电熊猫液晶显示科技有限公司 | 一种干法刻蚀设备 |
| CN112748639B (zh) * | 2019-10-31 | 2024-09-17 | 沈阳芯源微电子设备股份有限公司 | 气流分区调控的ffu整流板和调整胶形的涂胶工艺 |
| KR102883703B1 (ko) * | 2020-11-05 | 2025-11-10 | 삼성전자주식회사 | 기판 처리 방법 및 장치 |
| CN113471123B (zh) * | 2021-07-06 | 2023-08-25 | 华海清科股份有限公司 | 晶圆竖直旋转处理设备及其应用的通风系统 |
| CN113488416B (zh) * | 2021-07-06 | 2022-10-21 | 华海清科股份有限公司 | 晶圆后处理设备及其应用的通风系统 |
| JP2025508673A (ja) * | 2022-03-02 | 2025-04-10 | ラム リサーチ コーポレーション | 堆積－阻害－堆積プロセスの層均一性向上 |
| CN117116816B (zh) * | 2023-10-24 | 2024-01-23 | 上海谙邦半导体设备有限公司 | 进气装置及进气方法 |
| CN117410166B (zh) * | 2023-12-15 | 2024-05-17 | 浙江集迈科微电子有限公司 | 用于提高刻蚀均匀度的整流组件及其使用方法 |
| CN117612977B (zh) * | 2024-01-23 | 2024-04-05 | 上海邦芯半导体科技有限公司 | 进气装置及进气方法 |
| CN118824905B (zh) * | 2024-09-18 | 2024-11-29 | 上海邦芯半导体科技有限公司 | 一种半导体反应装置及其使用方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5441568A (en) * | 1994-07-15 | 1995-08-15 | Applied Materials, Inc. | Exhaust baffle for uniform gas flow pattern |
| JP4151749B2 (ja) * | 1998-07-16 | 2008-09-17 | 東京エレクトロンＡｔ株式会社 | プラズマ処理装置およびその方法 |
| JP4288767B2 (ja) | 1999-07-07 | 2009-07-01 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| WO2003041140A1 (en) * | 2001-11-05 | 2003-05-15 | Eugene Technology Co., Ltd. | Apparatus of chemical vapor deposition |
| US6962878B2 (en) * | 2003-04-17 | 2005-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to reduce photoresist mask line dimensions |
| US8236105B2 (en) * | 2004-04-08 | 2012-08-07 | Applied Materials, Inc. | Apparatus for controlling gas flow in a semiconductor substrate processing chamber |
| US7211518B2 (en) * | 2004-04-19 | 2007-05-01 | Lam Research Corporation | Waferless automatic cleaning after barrier removal |
| US7732728B2 (en) * | 2007-01-17 | 2010-06-08 | Lam Research Corporation | Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor |
| KR100963297B1 (ko) | 2007-09-04 | 2010-06-11 | 주식회사 유진테크 | 샤워헤드 및 이를 포함하는 기판처리장치, 샤워헤드를이용하여 플라스마를 공급하는 방법 |
| CN102355792B (zh) * | 2011-10-19 | 2016-04-06 | 中微半导体设备(上海)有限公司 | 改进等离子均匀性和效率的电感耦合等离子装置 |
| JP5886821B2 (ja) * | 2013-01-04 | 2016-03-16 | ピーエスケー インコーポレイテッド | 基板処理装置及び方法 |
-
2014
- 2014-12-10 CN CN201410749979.2A patent/CN105742203B/zh active Active
-
2015
- 2015-08-25 TW TW104127779A patent/TW201621977A/zh unknown
- 2015-11-19 KR KR1020150162465A patent/KR101735958B1/ko active Active
- 2015-11-19 US US14/946,188 patent/US10529577B2/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI718932B (zh) * | 2019-04-25 | 2021-02-11 | 南韓商吉佳藍科技股份有限公司 | 排出流動調節部及其等離子處理裝置及等離子處理方法 |
| US12297535B2 (en) | 2019-06-06 | 2025-05-13 | Picosun Oy | Substrate processing methods and apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105742203A (zh) | 2016-07-06 |
| KR20160070679A (ko) | 2016-06-20 |
| TWI560742B (enExample) | 2016-12-01 |
| CN105742203B (zh) | 2019-08-13 |
| US20160172204A1 (en) | 2016-06-16 |
| US10529577B2 (en) | 2020-01-07 |
| KR101735958B1 (ko) | 2017-05-15 |
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