KR101735958B1 - 가스 유동패턴을 변경하는 장치, 웨이퍼 처리방법 및 설비 - Google Patents

가스 유동패턴을 변경하는 장치, 웨이퍼 처리방법 및 설비 Download PDF

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KR101735958B1
KR101735958B1 KR1020150162465A KR20150162465A KR101735958B1 KR 101735958 B1 KR101735958 B1 KR 101735958B1 KR 1020150162465 A KR1020150162465 A KR 1020150162465A KR 20150162465 A KR20150162465 A KR 20150162465A KR 101735958 B1 KR101735958 B1 KR 101735958B1
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gas
moving ring
wafer
opening
processing chamber
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KR20160070679A (ko
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투치앙 니
지린 후앙
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어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드, 상하이
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/54—Providing fillings in containers, e.g. gas fillings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
KR1020150162465A 2014-12-10 2015-11-19 가스 유동패턴을 변경하는 장치, 웨이퍼 처리방법 및 설비 Active KR101735958B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410749979.2 2014-12-10
CN201410749979.2A CN105742203B (zh) 2014-12-10 2014-12-10 一种改变气体流动模式的装置及晶圆处理方法和设备

Publications (2)

Publication Number Publication Date
KR20160070679A KR20160070679A (ko) 2016-06-20
KR101735958B1 true KR101735958B1 (ko) 2017-05-15

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KR1020150162465A Active KR101735958B1 (ko) 2014-12-10 2015-11-19 가스 유동패턴을 변경하는 장치, 웨이퍼 처리방법 및 설비

Country Status (4)

Country Link
US (1) US10529577B2 (enExample)
KR (1) KR101735958B1 (enExample)
CN (1) CN105742203B (enExample)
TW (1) TW201621977A (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6523714B2 (ja) * 2015-03-05 2019-06-05 東京エレクトロン株式会社 プラズマ処理装置
US20190287835A1 (en) * 2018-02-01 2019-09-19 Yield Engineering Systems, Inc. Interchangeable Edge Rings For Stabilizing Wafer Placement And System Using Same
KR102516885B1 (ko) * 2018-05-10 2023-03-30 삼성전자주식회사 증착 장비 및 이를 이용한 반도체 장치 제조 방법
CN110890260B (zh) * 2018-09-07 2022-11-04 中微半导体设备(上海)股份有限公司 一种动态控制气体流动模式的装置及晶圆处理方法和设备
KR102078364B1 (ko) * 2019-04-25 2020-02-17 주식회사 기가레인 배출흐름조절부 및 이를 포함하는 플라즈마 처리장치
US12297535B2 (en) 2019-06-06 2025-05-13 Picosun Oy Substrate processing methods and apparatus
CN110211860B (zh) * 2019-06-26 2021-07-13 南京中电熊猫液晶显示科技有限公司 一种干法刻蚀设备
CN112748639B (zh) * 2019-10-31 2024-09-17 沈阳芯源微电子设备股份有限公司 气流分区调控的ffu整流板和调整胶形的涂胶工艺
KR102883703B1 (ko) * 2020-11-05 2025-11-10 삼성전자주식회사 기판 처리 방법 및 장치
CN113471123B (zh) * 2021-07-06 2023-08-25 华海清科股份有限公司 晶圆竖直旋转处理设备及其应用的通风系统
CN113488416B (zh) * 2021-07-06 2022-10-21 华海清科股份有限公司 晶圆后处理设备及其应用的通风系统
JP2025508673A (ja) * 2022-03-02 2025-04-10 ラム リサーチ コーポレーション 堆積－阻害－堆積プロセスの層均一性向上
CN117116816B (zh) * 2023-10-24 2024-01-23 上海谙邦半导体设备有限公司 进气装置及进气方法
CN117410166B (zh) * 2023-12-15 2024-05-17 浙江集迈科微电子有限公司 用于提高刻蚀均匀度的整流组件及其使用方法
CN117612977B (zh) * 2024-01-23 2024-04-05 上海邦芯半导体科技有限公司 进气装置及进气方法
CN118824905B (zh) * 2024-09-18 2024-11-29 上海邦芯半导体科技有限公司 一种半导体反应装置及其使用方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6454909B1 (en) 1999-07-07 2002-09-24 Tokyo Electron Limited Method and apparatus for forming a film on an object to be processed
JP2010538164A (ja) 2007-09-04 2010-12-09 ユージン テクノロジー カンパニー リミテッド シャワーヘッドおよびこれを含む基板処理装置、並びにシャワーヘッドを用いてプラズマを供給する方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441568A (en) * 1994-07-15 1995-08-15 Applied Materials, Inc. Exhaust baffle for uniform gas flow pattern
JP4151749B2 (ja) * 1998-07-16 2008-09-17 東京エレクトロンＡｔ株式会社 プラズマ処理装置およびその方法
WO2003041140A1 (en) * 2001-11-05 2003-05-15 Eugene Technology Co., Ltd. Apparatus of chemical vapor deposition
US6962878B2 (en) * 2003-04-17 2005-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method to reduce photoresist mask line dimensions
US8236105B2 (en) * 2004-04-08 2012-08-07 Applied Materials, Inc. Apparatus for controlling gas flow in a semiconductor substrate processing chamber
US7211518B2 (en) * 2004-04-19 2007-05-01 Lam Research Corporation Waferless automatic cleaning after barrier removal
US7732728B2 (en) * 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
CN102355792B (zh) * 2011-10-19 2016-04-06 中微半导体设备(上海)有限公司 改进等离子均匀性和效率的电感耦合等离子装置
JP5886821B2 (ja) * 2013-01-04 2016-03-16 ピーエスケー インコーポレイテッド 基板処理装置及び方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6454909B1 (en) 1999-07-07 2002-09-24 Tokyo Electron Limited Method and apparatus for forming a film on an object to be processed
JP2010538164A (ja) 2007-09-04 2010-12-09 ユージン テクノロジー カンパニー リミテッド シャワーヘッドおよびこれを含む基板処理装置、並びにシャワーヘッドを用いてプラズマを供給する方法

Also Published As

Publication number Publication date
CN105742203A (zh) 2016-07-06
TW201621977A (zh) 2016-06-16
KR20160070679A (ko) 2016-06-20
TWI560742B (enExample) 2016-12-01
CN105742203B (zh) 2019-08-13
US20160172204A1 (en) 2016-06-16
US10529577B2 (en) 2020-01-07

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