TW201612994A - Multilayered transient liquid phase bonding - Google Patents
Multilayered transient liquid phase bondingInfo
- Publication number
- TW201612994A TW201612994A TW104124974A TW104124974A TW201612994A TW 201612994 A TW201612994 A TW 201612994A TW 104124974 A TW104124974 A TW 104124974A TW 104124974 A TW104124974 A TW 104124974A TW 201612994 A TW201612994 A TW 201612994A
- Authority
- TW
- Taiwan
- Prior art keywords
- alloy component
- multilayered
- liquid phase
- transient liquid
- phase bonding
- Prior art date
Links
- 239000007791 liquid phase Substances 0.000 title 1
- 230000001052 transient effect Effects 0.000 title 1
- 239000000956 alloy Substances 0.000 abstract 9
- 229910045601 alloy Inorganic materials 0.000 abstract 9
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
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- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L2224/29401—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L2224/29401—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/29417—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29444—Gold [Au] as principal constituent
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- H—ELECTRICITY
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L2224/29099—Material
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
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- H01L2224/83825—Solid-liquid interdiffusion
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/163—Connection portion, e.g. seal
- H01L2924/164—Material
- H01L2924/165—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10053—Switch
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10083—Electromechanical or electro-acoustic component, e.g. microphone
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10954—Other details of electrical connections
- H05K2201/10984—Component carrying a connection agent, e.g. solder, adhesive
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
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- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wire Bonding (AREA)
- Inorganic Chemistry (AREA)
- Laminated Bodies (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
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Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10568213B2 (en) | 2014-07-31 | 2020-02-18 | Skyworks Solutions, Inc. | Multilayered transient liquid phase bonding |
US10541152B2 (en) | 2014-07-31 | 2020-01-21 | Skyworks Solutions, Inc. | Transient liquid phase material bonding and sealing structures and methods of forming same |
KR20170044791A (ko) * | 2015-10-15 | 2017-04-26 | 희성전자 주식회사 | 양자점, 고분자 수지, 양자점 시트 및 이를 포함하는 백라이트 유닛 |
US10629468B2 (en) | 2016-02-11 | 2020-04-21 | Skyworks Solutions, Inc. | Device packaging using a recyclable carrier substrate |
US10453763B2 (en) | 2016-08-10 | 2019-10-22 | Skyworks Solutions, Inc. | Packaging structures with improved adhesion and strength |
US20180159502A1 (en) | 2016-12-02 | 2018-06-07 | Skyworks Solutions, Inc. | Methods of manufacturing electronic devices to prevent water ingress during manufacture |
US10483248B2 (en) * | 2017-03-23 | 2019-11-19 | Skyworks Solutions, Inc. | Wafer level chip scale filter packaging using semiconductor wafers with through wafer vias |
US11791237B2 (en) * | 2018-06-27 | 2023-10-17 | Intel Corporation | Microelectronic assemblies including a thermal interface material |
US11682605B2 (en) | 2019-05-28 | 2023-06-20 | Intel Corporation | Integrated circuit packages with asymmetric adhesion material regions |
CN111525314B (zh) * | 2020-05-05 | 2023-06-20 | 富士康(昆山)电脑接插件有限公司 | 导电端子 |
US11894241B2 (en) | 2021-01-28 | 2024-02-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Heterogeneous bonding structure and method forming same |
Family Cites Families (81)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3439231A (en) * | 1967-02-13 | 1969-04-15 | Mallory & Co Inc P R | Hermetically encapsulated electronic device |
DE68920537T2 (de) | 1988-10-11 | 1995-06-14 | Sony Corp | Vorrichtungen zur Umwandlung von optischen Wellenlängen. |
US5448014A (en) | 1993-01-27 | 1995-09-05 | Trw Inc. | Mass simultaneous sealing and electrical connection of electronic devices |
JPH1050638A (ja) | 1996-07-29 | 1998-02-20 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US6521477B1 (en) | 2000-02-02 | 2003-02-18 | Raytheon Company | Vacuum package fabrication of integrated circuit components |
US6578754B1 (en) | 2000-04-27 | 2003-06-17 | Advanpack Solutions Pte. Ltd. | Pillar connections for semiconductor chips and method of manufacture |
JP2002289768A (ja) | 2000-07-17 | 2002-10-04 | Rohm Co Ltd | 半導体装置およびその製法 |
US6884313B2 (en) | 2001-01-08 | 2005-04-26 | Fujitsu Limited | Method and system for joining and an ultra-high density interconnect |
KR100396551B1 (ko) | 2001-02-03 | 2003-09-03 | 삼성전자주식회사 | 웨이퍼 레벨 허메틱 실링 방법 |
TW560018B (en) | 2001-10-30 | 2003-11-01 | Asia Pacific Microsystems Inc | A wafer level packaged structure and method for manufacturing the same |
US6793829B2 (en) * | 2002-02-27 | 2004-09-21 | Honeywell International Inc. | Bonding for a micro-electro-mechanical system (MEMS) and MEMS based devices |
US7832177B2 (en) | 2002-03-22 | 2010-11-16 | Electronics Packaging Solutions, Inc. | Insulated glazing units |
JP2004095849A (ja) | 2002-08-30 | 2004-03-25 | Fujikura Ltd | 貫通電極付き半導体基板の製造方法、貫通電極付き半導体デバイスの製造方法 |
JP3892370B2 (ja) | 2002-09-04 | 2007-03-14 | 富士通メディアデバイス株式会社 | 弾性表面波素子、フィルタ装置及びその製造方法 |
JP4766831B2 (ja) | 2002-11-26 | 2011-09-07 | 株式会社村田製作所 | 電子部品の製造方法 |
US7089635B2 (en) | 2003-02-25 | 2006-08-15 | Palo Alto Research Center, Incorporated | Methods to make piezoelectric ceramic thick film arrays and elements |
US7183622B2 (en) | 2004-06-30 | 2007-02-27 | Intel Corporation | Module integrating MEMS and passive components |
JP4513513B2 (ja) | 2004-11-09 | 2010-07-28 | 株式会社村田製作所 | 電子部品の製造方法 |
JP2006197554A (ja) | 2004-12-17 | 2006-07-27 | Seiko Epson Corp | 弾性表面波デバイス及びその製造方法、icカード、携帯用電子機器 |
JP4692024B2 (ja) | 2005-03-04 | 2011-06-01 | パナソニック株式会社 | 弾性表面波デバイス |
US7538401B2 (en) * | 2005-05-03 | 2009-05-26 | Rosemount Aerospace Inc. | Transducer for use in harsh environments |
US7400042B2 (en) | 2005-05-03 | 2008-07-15 | Rosemount Aerospace Inc. | Substrate with adhesive bonding metallization with diffusion barrier |
US7628309B1 (en) | 2005-05-03 | 2009-12-08 | Rosemount Aerospace Inc. | Transient liquid phase eutectic bonding |
JP2006345170A (ja) | 2005-06-08 | 2006-12-21 | Toshiba Corp | 薄膜圧電共振器 |
JP2007019132A (ja) | 2005-07-06 | 2007-01-25 | Seiko Epson Corp | 圧電振動装置の製造方法 |
JP4517992B2 (ja) | 2005-09-14 | 2010-08-04 | セイコーエプソン株式会社 | 導通孔形成方法、並びに圧電デバイスの製造方法、及び圧電デバイス |
JP4717573B2 (ja) | 2005-09-26 | 2011-07-06 | ジーイー・メディカル・システムズ・グローバル・テクノロジー・カンパニー・エルエルシー | Mri装置 |
US7936062B2 (en) | 2006-01-23 | 2011-05-03 | Tessera Technologies Ireland Limited | Wafer level chip packaging |
US7892972B2 (en) | 2006-02-03 | 2011-02-22 | Micron Technology, Inc. | Methods for fabricating and filling conductive vias and conductive vias so formed |
JP2007266294A (ja) | 2006-03-28 | 2007-10-11 | Kyocera Corp | 半導体素子集積デバイス、半導体装置およびその製造方法 |
JP2008252351A (ja) | 2007-03-29 | 2008-10-16 | Murata Mfg Co Ltd | 弾性表面波素子及びその製造方法 |
JP2009008770A (ja) * | 2007-06-26 | 2009-01-15 | Kobe Steel Ltd | 積層構造およびその製造方法 |
US20090004500A1 (en) | 2007-06-26 | 2009-01-01 | Daewoong Suh | Multilayer preform for fast transient liquid phase bonding |
EP2215655A4 (en) * | 2007-11-30 | 2014-07-30 | Skyworks Solutions Inc | CAPACITATION AT WAFBERBENE USING FLIP-CHIP ATTACHMENT |
JP5262136B2 (ja) | 2008-01-28 | 2013-08-14 | 株式会社村田製作所 | 電子部品の製造方法 |
CN101946401B (zh) | 2008-02-18 | 2014-09-03 | 精工电子水晶科技股份有限公司 | 压电振动器的制造方法、压电振动器、振荡器、电子设备及电波钟 |
JP2009200093A (ja) | 2008-02-19 | 2009-09-03 | Murata Mfg Co Ltd | 中空型の電子部品 |
DE102008025202B4 (de) | 2008-05-27 | 2014-11-06 | Epcos Ag | Hermetisch geschlossenes Gehäuse für elektronische Bauelemente und Herstellungsverfahren |
JP5610177B2 (ja) | 2008-07-09 | 2014-10-22 | 国立大学法人東北大学 | 機能デバイス及びその製造方法 |
JPWO2010021267A1 (ja) | 2008-08-21 | 2012-01-26 | 株式会社村田製作所 | 電子部品装置およびその製造方法 |
US8686622B2 (en) | 2009-07-30 | 2014-04-01 | Ngk Insulators, Ltd. | Composite substrate and method for manufacturing the same |
US8348139B2 (en) * | 2010-03-09 | 2013-01-08 | Indium Corporation | Composite solder alloy preform |
JP2011223234A (ja) | 2010-04-08 | 2011-11-04 | Seiko Epson Corp | 圧電振動子、圧電デバイス、貫通電極構造、半導体装置、半導体パッケージ |
JP5640610B2 (ja) * | 2010-09-29 | 2014-12-17 | 三菱マテリアル株式会社 | パワーモジュール用基板の製造装置 |
US8592986B2 (en) * | 2010-11-09 | 2013-11-26 | Rohm Co., Ltd. | High melting point soldering layer alloyed by transient liquid phase and fabrication method for the same, and semiconductor device |
DE102011016554B4 (de) | 2011-04-08 | 2018-11-22 | Snaptrack, Inc. | Waferlevel-Package und Verfahren zur Herstellung |
US8513806B2 (en) * | 2011-06-30 | 2013-08-20 | Rohm Co., Ltd. | Laminated high melting point soldering layer formed by TLP bonding and fabrication method for the same, and semiconductor device |
EP2541593B1 (en) * | 2011-06-30 | 2019-04-17 | Rohm Co., Ltd. | Laminated high melting point soldering layer |
DE112012002879B4 (de) | 2011-07-08 | 2018-03-01 | Murata Manufacturing Co., Ltd. | Schaltungsmodul |
JP2013055632A (ja) | 2011-08-11 | 2013-03-21 | Nippon Dempa Kogyo Co Ltd | 気密封止パッケージ及びこの気密封止パッケージの製造方法 |
JP5588419B2 (ja) | 2011-10-26 | 2014-09-10 | 株式会社東芝 | パッケージ |
US9773750B2 (en) | 2012-02-09 | 2017-09-26 | Apple Inc. | Method of transferring and bonding an array of micro devices |
JP5837845B2 (ja) | 2012-02-23 | 2015-12-24 | 京セラ株式会社 | 電子部品の製造方法及び電子部品 |
US9044822B2 (en) | 2012-04-17 | 2015-06-02 | Toyota Motor Engineering & Manufacturing North America, Inc. | Transient liquid phase bonding process for double sided power modules |
US10058951B2 (en) | 2012-04-17 | 2018-08-28 | Toyota Motor Engineering & Manufacturing North America, Inc. | Alloy formation control of transient liquid phase bonding |
KR102061695B1 (ko) | 2012-10-17 | 2020-01-02 | 삼성전자주식회사 | 웨이퍼 가공 방법 |
US8796849B2 (en) * | 2012-10-22 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal bump joint structure |
DE102012110542B4 (de) | 2012-11-05 | 2017-04-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Selbstaktivierender Dünnschichtgetter in reaktiven Mehrschichtsystemen |
DE102012112058B4 (de) | 2012-12-11 | 2020-02-27 | Snaptrack, Inc. | MEMS-Bauelement und Verfahren zur Verkapselung von MEMS-Bauelementen |
TW201427113A (zh) * | 2012-12-21 | 2014-07-01 | Ind Tech Res Inst | 發光二極體封裝的固晶方法和固晶結構 |
US9406577B2 (en) | 2013-03-13 | 2016-08-02 | Globalfoundries Singapore Pte. Ltd. | Wafer stack protection seal |
JP6061248B2 (ja) | 2013-03-29 | 2017-01-18 | 国立研究開発法人産業技術総合研究所 | 接合方法及び半導体モジュールの製造方法 |
JP6385648B2 (ja) | 2013-05-14 | 2018-09-05 | 太陽誘電株式会社 | 弾性波デバイス、及び弾性波デバイスの製造方法 |
JP6374240B2 (ja) | 2013-07-05 | 2018-08-15 | トヨタ モーター エンジニアリング アンド マニュファクチャリング ノース アメリカ,インコーポレイティド | 両面パワーモジュールのための液相拡散接合プロセス |
JP6158676B2 (ja) | 2013-10-15 | 2017-07-05 | 新光電気工業株式会社 | 配線基板、半導体装置及び配線基板の製造方法 |
US9634641B2 (en) | 2013-11-06 | 2017-04-25 | Taiyo Yuden Co., Ltd. | Electronic module having an interconnection substrate with a buried electronic device therein |
JP6335476B2 (ja) | 2013-11-06 | 2018-05-30 | 太陽誘電株式会社 | モジュール |
US9793877B2 (en) | 2013-12-17 | 2017-10-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Encapsulated bulk acoustic wave (BAW) resonator device |
US9768345B2 (en) | 2013-12-20 | 2017-09-19 | Apple Inc. | LED with current injection confinement trench |
US10568213B2 (en) | 2014-07-31 | 2020-02-18 | Skyworks Solutions, Inc. | Multilayered transient liquid phase bonding |
US10541152B2 (en) | 2014-07-31 | 2020-01-21 | Skyworks Solutions, Inc. | Transient liquid phase material bonding and sealing structures and methods of forming same |
WO2016027593A1 (ja) | 2014-08-22 | 2016-02-25 | 株式会社 豊田自動織機 | 接合構造、接合材、及び接合方法 |
US9893116B2 (en) | 2014-09-16 | 2018-02-13 | Toshiba Memory Corporation | Manufacturing method of electronic device and manufacturing method of semiconductor device |
US10196745B2 (en) | 2014-10-31 | 2019-02-05 | General Electric Company | Lid and method for sealing a non-magnetic package |
JP2016096265A (ja) | 2014-11-14 | 2016-05-26 | 株式会社東芝 | デバイスの製造方法 |
US9847310B2 (en) | 2015-07-18 | 2017-12-19 | Semiconductor Components Industries, Llc | Flip chip bonding alloys |
TW201730994A (zh) | 2015-12-08 | 2017-09-01 | 天工方案公司 | 使用一載體晶圓以在晶圓級晶片尺寸封裝中提供保護空腔及整合式被動組件之方法 |
US10321572B2 (en) | 2016-04-01 | 2019-06-11 | Skyworks Filter Solutions Japan Co., Ltd. | Electronic package including cavity defined by resin and method of forming same |
US20180159502A1 (en) | 2016-12-02 | 2018-06-07 | Skyworks Solutions, Inc. | Methods of manufacturing electronic devices to prevent water ingress during manufacture |
KR102064380B1 (ko) | 2018-06-22 | 2020-01-10 | (주)와이솔 | 표면 탄성파 소자 패키지 및 그 제조 방법 |
US11251769B2 (en) | 2018-10-18 | 2022-02-15 | Skyworks Solutions, Inc. | Bulk acoustic wave components |
-
2015
- 2015-07-31 US US14/815,098 patent/US10568213B2/en active Active
- 2015-07-31 TW TW104124974A patent/TWI661494B/zh active
- 2015-07-31 CN CN201510765238.8A patent/CN105448869A/zh active Pending
-
2016
- 2016-05-12 HK HK16105429.2A patent/HK1217570A1/zh unknown
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2020
- 2020-01-07 US US16/735,967 patent/US11546998B2/en active Active
Also Published As
Publication number | Publication date |
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HK1217570A1 (zh) | 2017-01-13 |
TWI661494B (zh) | 2019-06-01 |
US11546998B2 (en) | 2023-01-03 |
CN105448869A (zh) | 2016-03-30 |
US20200146155A1 (en) | 2020-05-07 |
US10568213B2 (en) | 2020-02-18 |
US20160037649A1 (en) | 2016-02-04 |
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