TW201606038A - 用於檢測半導體的耐熱性粘合片，以及半 導體的檢測方法 - Google Patents

用於檢測半導體的耐熱性粘合片，以及半 導體的檢測方法 Download PDF

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TW201606038A
TW201606038A TW104114981A TW104114981A TW201606038A TW 201606038 A TW201606038 A TW 201606038A TW 104114981 A TW104114981 A TW 104114981A TW 104114981 A TW104114981 A TW 104114981A TW 201606038 A TW201606038 A TW 201606038A
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adhesive sheet
sensitive adhesive
pressure
semiconductor
mass
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TW104114981A
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TWI671380B (zh
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Gosuke Nakajima
Masanobu Kutsumi
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Denki Kagaku Kogyo Kk
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    • C09J4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09J159/00 - C09J187/00
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    • C08F265/00—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00
    • C08F265/04—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00 on to polymers of esters
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    • C09J175/04—Polyurethanes
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Abstract

本發明提供一種加溫不易導致變形的耐熱性粘合片。提供一種將粘合劑層層疊於基材而得的粘合片，其特徵在於基材顯示熱收縮性，粘合劑層含有(甲基)丙烯酸酯共聚物、光可聚合性化合物、多官能異氰酸酯可固化劑、光聚合引發劑，實質上不含有增粘樹脂。此粘合片，加溫後的情況也不會發生變形。另外因為粘合劑實質上不含有增粘樹脂，所以加溫後的情況也不會發生粘合劑層的軟化。

Description

用於檢測半導體的耐熱性粘合片，以及半 導體的檢測方法
本發明涉及用於檢測半導體的耐熱性粘合片以及利用該粘合片進行半導體檢測的方法。
半導體晶片，在形成電路之後貼和粘合片，然後被分配用於元件片的切斷(切割)、清洗、乾燥、粘合片的延伸(擴展)、從粘合片上進行元件片的剝離(分離)、固定等各程序。用於這些程序的粘合片(切割膠帶)，相對於從切割程序至乾燥程序中被切斷的元件片(晶片)具有充分的粘合力，但與此同時也希望在分離程序中粘合力能夠減少至無膠粘殘餘的程度。
作為粘合片，在對於紫外線及/或電子束等活性光具有透過性的基材上，塗抹可由紫外線等引起聚合固化反應的粘合劑層。關於此粘合片，於切割程序後用紫外線等照射粘合劑層，使粘合劑層發生聚合固化從而降低其粘合力後，分離出被切斷的晶片。
作為此類粘合片，在專利文獻1及專利文獻2中，公開了如下內容： 在基材面塗抹一種粘合劑而組成粘合片，該粘合劑含有例如由於活性光而可能導致三維網狀化、分子內含有光聚合性不飽和雙鍵的化合物(多功能低聚物)。
【背景技術文獻】 【專利文獻】
【專利文獻1】日本專利特開2009-245989號公報
【專利文獻2】日本專利特開2012-248640號公報
在半導體裝置的製造程序中，按照以下順序進行加工以及性能檢測。
．半導體晶片的切割
．性能檢測(常溫)
．包裝
．性能檢測(高溫以及常溫)
上述程序中，在高溫狀態下出現異常的晶片，只能進行到包裝後的性能檢測步驟才可以判斷出來。因此，對高溫狀態下出現異常的晶片也必須全部進行包裝，包裝成本將增大。
若將切割後的性能檢測在高溫下進行，雖然可以降低包裝成本，但是 將半導體晶片貼合到切割膠帶等粘合片的狀態來進行該性能檢測時，若對半導體晶片加溫，會出現粘合片發生彎曲變形，過度密集等情況。
因為如果粘合片發生變形，半導體晶片的位置會偏離，在晶片上形成的電極焊盤和檢測探針間無法自動產生一致性，所以需要長時間進行檢測。並且，變形大的情況下，可能會發生晶片接觸到檢測探針而導致檢測無法進行。另外，半導體晶片的間隙窄的情況下，可能會導致晶片之間發生接觸，而引起晶片破損或強度降低。
另外，如果粘合片在半導體晶片上過度密集，即使利用紫外線等照射粘合劑層使其發生固化，也不會充分降低粘合劑層的粘合力，這些也是導致分離困難或膠粘殘餘等不良現象的原因。
本發明是鑒於上述情況而完成的，提供一種粘合片，使得可以在加溫狀態下對半導體晶片進行檢測。
根據本發明，提供一種半導體檢測用的耐熱性粘合片，其特徵在於對半導體晶片加熱的同時能夠進行性能檢測程序，此粘合片在基材上具有粘合劑層。此基材在120℃加熱15分鐘後的熱收縮率為1.0%~5.0%，此粘合劑層以含有如下物質為特徵：100質量份(甲基)丙烯酸酯共聚物和5~200質量份光可聚合性化合物和0.5~20質量份多官能異氰酸酯固化劑和0.1~ 20質量份光聚合引發劑和0~2質量份增粘樹脂，提供用於半導體檢測的耐熱性粘合片。
本發明者們，將具有熱收縮性的薄膜作為粘合片的基材來使用，發現這樣可以使加熱後的粘合片擴張從而能夠抑制變形，另外，加溫引起的粘合劑層的軟化，其原因是粘合劑中所含的增粘樹脂的軟化。
以這個認知為基礎，發現藉由使用在有上述範圍熱收縮率的基材上具有上述組成的粘合劑層的粘合片，可以借助半導體晶片加熱後的狀態來進行檢測，從而完成本發明。
以下舉例說明本發明的各種實施方式。以下所示的實施方式之間可以相互組合。
優選，所述基材特徵為雙軸拉伸薄膜。
優選，所述粘合片的粘合劑層含有剝離賦予劑。
優選，所述剝離賦予劑由有機矽類(Silicone type)接枝共聚物組成。
優選，相對於100質量份(甲基)丙烯酸酯共聚物，所述剝離賦予劑的添加量為1~20質量份。
優選，所述多官能異氰酸酯固化劑具有3個以上異氰酸酯基。
優選，所述光聚合引發劑從23℃起以10℃/分鐘的升溫速度進行升溫時，其質量減少率為10%的溫度為250℃以上。
根據本發明的其他觀點，提供一種半導體的檢測方法，含有半導體芯 片粘貼於粘合片的狀態下，使所述粘合片與所述載物臺相接觸，承載於100~150℃載物臺上吸附固定的吸附程序對所述載物臺於100~150℃加熱的同時對所述半導體芯片進行性能檢測的檢測程序，對所述粘合片進行活性光照射的活性光照射程序，從所述粘合片上分離所述半導體芯片的分離程序，所述粘合片為上述粘合片。優選為，所述吸附程序前，進一步具備將粘合片粘貼於半導體晶片的粘貼程序和將所述半導體晶片切割成所述半導體晶片的切割程序。
根據本發明，提供一種粘合片，其不易因加溫導致變形以及粘合劑層的軟化，可將半導體晶片加溫後進行檢測。現有的加溫狀態下的矽晶片檢測，雖然是在半導體包裝程序之後進行，但是根據本發明，可以在包裝程序前進行加溫狀態下的矽晶片檢測。也就是說，根據本發明，因為可以在包裝程序前就能判斷出加溫狀態下質量不良的晶片，所以可以免去包裝此不良晶片的步驟，這可以降低包裝成本。
以下，對用於實施本發明的適宜方式進行說明。另外，以下說明的實施方式，表示本發明的代表性實施方式的其中一例，並非是對本發明範圍 的限定性解釋。
1.粘合片
(1)基材
(2)光可固化型粘合劑
(2-1)實質上不含有增粘樹脂
(2-2)(甲基)丙烯酸酯共聚物
(2-3)光可聚合性化合物
(2-4)多官能異氰酸酯固化劑
(2-5)光聚合引發劑
2.半導體的檢測方法
(1)粘貼程序
(2)切割程序
(3)吸附程序
(4)檢測程序
(5)活性光照程序
(6)分離程序
1.粘合片
本發明的相關粘合片，藉由具有熱收縮性的基材上層疊光可固化型粘合劑層(以下也簡單稱為「粘合劑層」)而組成，以粘合劑層實質上不含 有增粘樹脂為特徵。本發明的相關粘合片，即使在加溫條件下也不發生變形。另外，本發明的相關粘合片，因為其幾乎或者完全不會發生引發增粘樹脂軟化的粘合劑層軟化現象，所以在半導體晶片上不會過度密集。因此，本發明的相關粘合片能夠防止因粘合片變形而導致的檢測時間變長和半導體晶片的破損等。此外，由紫外線等照射可引起粘合劑層的充分黏著力降低，能夠防止分離不良和膠粘殘留。
(1)基材
作為基材的材料，於120℃加熱15分鐘後的熱收縮率為1.0%~5.0%，優選1.5%~4.0%。若熱收縮率小於1.0%，加溫後基材的收縮減小，由於基材的熱膨脹等可能導致粘合片變形。另外，若熱收縮率大於5.0%，加熱後基材的收縮過大，可能導致粘合片從環形框架(Ring Frame)上剝離，基材斷裂破損。此處熱收縮率為下式所求得數值。
(L0-L1)/L0x100(%)
L0：加熱前的基材長度(10cm)
L1：於120℃加熱15分鐘，冷卻至室溫後的基材長度
另外，優選基材被雙軸拉伸。藉由雙軸拉伸，加熱時基材易於收縮。作為此類基材，例如有聚乙烯和聚丙烯等聚烯烴、聚苯乙烯、聚氯乙烯等。基材的形成方法沒有特別限定，例如有從T型模具中延伸押出的樹脂而形成薄片狀的方法。另外，若在不損失性能的範圍中，此類基材也可以含有氧化防止劑和抗靜電劑、潤滑劑、防阻塞劑、填料等添加劑。
基材可以是由上述材料組成的單層或者多層的薄膜或者薄片，也可以是由不同材料組成的薄膜等層疊而成。基材的厚度為10~100μm，優選20~80μm。
優選對基材實施抗靜電處理。作為抗靜電處理，有向基材混合抗靜電劑的處理，向基材表面塗抹抗靜電劑的處理，藉由電暈放電進行的處理。
作為抗靜電劑，例如可以使用季銨鹽單體等。作為季銨鹽單體，例如有二甲基氨基乙基(甲基)異丁烯酯四級氯化物、二乙基氨基乙基(甲基)異丁烯酯四級氯化物、甲基乙基氨基乙基(甲基)異丁烯酯四級氯化物、對-二甲基氨基乙基異丁烯酯四級氯化物(Dimethyl amino ethyl methacrylate quaternary chloride)以及對-二乙基氨基苯乙烯四級氯化物。這其中，優選二甲基氨基乙基(甲基)異丁烯酯四級氯化物。
(2)光可固化型粘合劑
形成本發明相關粘合片的粘合劑層的光可固化型粘合劑，含有(甲基)丙烯酸酯共聚物和光可聚合性化合物和多官能異氰酸酯固化劑和光聚合引發劑，實質上不含有增粘樹脂。
(2-1)實質上不含有增粘樹脂。
增粘樹脂是粘合劑層因加熱導致軟化的原因，是為了提高丙烯酸類粘合劑的粘合性而被混合使用的樹脂，沒有特別限定，例如有松香樹脂、萜 烯樹脂、脂肪族石油樹脂、芳族石油樹脂、氫化石油樹脂、苯並二氫吡喃茚樹脂、苯乙烯樹脂、二甲苯樹脂以及這些樹脂的混合物。
雖然優選粘合劑中完全不含增粘樹脂，但是若加熱時粘合劑層幾乎不會發生軟化的程度，則粘合劑中也可以含有增粘樹脂，具體而言，相對於100質量份(甲基)丙烯酸酯共聚物，可以含有2質量份以下(優選0.5質量份以下)。也就是說，所謂「實質上不含有增粘樹脂」，是指相對於100質量份(甲基)丙烯酸酯共聚物，增粘樹脂的混合量為0~2質量份(優選0~0.5質量份)的意思。
只要粘合劑中實質上不含有增粘樹脂，也可以添加剝離賦予劑，抗老化劑，填料，紫外線吸收劑以及光穩定劑等各種添加劑。剝離賦予劑的添加量，沒有特別限定，相對於100質量份(甲基)丙烯酸酯共聚物，優選0.1~20質量份，進一步優選2~10質量份，進一步優選0.5~5質量份。剝離賦予劑，例如可以使用有機矽類接枝聚合物(或共聚物)。
(2-2)(甲基)丙烯酸酯共聚物
(甲基)丙烯酸酯共聚物，為只有(甲基)丙烯酸酯單體的共聚物，或者(甲基)丙烯酸酯單體和乙烯化合物單體而成的共聚物。另外，(甲基)丙烯酸酯是丙烯酸酯以及甲基丙烯酸酯的總稱。(甲基)丙烯酸等含(甲基)的化合物等也與此相同，為名稱中具有「甲基」的化合物和沒有「甲基」的化合物的總稱。
作為(甲基)丙烯酸酯單體，例如有丁基(甲基)丙烯酸酯、2-丁基(甲基)丙烯酸酯、叔丁基(甲基)丙烯酸酯、戊基(甲基)丙烯酸酯、辛基(甲基)丙烯酸酯、2-乙基己基(甲基)丙烯酸酯、壬基(甲基)丙烯酸酯、癸基(甲基)丙烯酸酯、月桂(甲基)丙烯酸酯、甲基(甲基)丙烯酸酯、乙基(甲基)丙烯酸酯、異丙基(甲基)丙烯酸酯、十三烷基(甲基)丙烯酸酯、肉豆蔻(甲基)丙烯酸酯、十六烷基(甲基)丙烯酸酯、硬脂(甲基)丙烯酸酯、環己基(甲基)丙烯酸酯、異冰片(甲基)丙烯酸酯、二環戊(甲基)丙烯酸酯、苄基(甲基)丙烯酸酯、甲氧基乙基(甲基)丙烯酸酯、乙氧基乙基(甲基)丙烯酸酯、丁氧基甲基(甲基)丙烯酸酯以及乙氧基-N-丙基(甲基)丙烯酸酯、2-羥乙基(甲基)丙烯酸酯、2-羥丙基(甲基)丙烯酸酯、4-羥丁基(甲基)丙烯酸酯。
作為可能與(甲基)丙烯酸酯單體發生共聚的乙烯基化合物單體，例如單體中含有羧基、環氧基、醯胺基、氨基、羥甲基、磺酸基、氨基磺酸基、(亞)磷酸酯基之官能團組中的1種以上的含官能團。
作為具有羧基的單體，例如有(甲基)丙烯酸、巴豆酸、馬來酸、衣康酸、富馬酸、丙烯醯胺N-乙醇酸以及肉桂酸。作為具有環氧基的單體，例如有烯丙基縮水甘油醚以及(甲基)丙烯酸縮水甘油醚。作為具有醯胺基的單體，例如有(甲基)丙烯醯胺。作為具有氨基的單體，例如有N，N-二甲基氨基乙基(甲基)丙烯酸酯。作為具有羥甲基的單體，例如有N- 羥甲基丙烯醯胺。
(2-3)光可聚合性化合物
作為光可聚合性化合物，例如可使用三羥甲基丙烷三丙烯酸酯、四羥甲基甲烷四丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇單羥基五丙烯酸酯、二季戊四醇六丙烯酸酯、1,4-丁二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、氰尿酸三丙烯酸酯、市售的低聚酯丙烯酸酯等。
作為光可聚合性化合物，除上述丙烯酸酯類化合物，也可以使用聚氨酯丙烯酸酯低聚物。聚氨酯丙烯酸酯低聚物可藉由如下反應獲得：聚酯型或者聚醚型等多元醇化合物與多價異氰酸酯化合物發生反應所得的末端異氰酸酯聚氨酯預聚物，使該物質與具有羥基的(甲基)丙烯酸酯發生反應而得。
多價異氰酸酯化合物，例如可使用2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、1,3-氰酸酯、1,4-亞二甲苯基二異氰酸酯、二苯基甲烷4,4-二異氰酸酯、三甲基二異氰酸酯、六亞甲基二異氰酸酯、異佛爾酮二異氰酸酯(Isophorone Diisocyanate)。
另外，具有羥基的(甲基)丙烯酸酯，例如有2-羥乙基(甲基)丙烯酸酯，2-羥丙基(甲基)丙烯酸酯，聚乙二醇(甲基)丙烯酸酯，季戊四醇三丙烯酸酯，縮水甘油二(甲基)丙烯酸酯，二季戊四醇單羥基五丙烯酸 酯等。
作為光可聚合性化合物，具有4個以上乙烯基的聚氨酯丙烯酸酯低聚物，優選紫外線等照射後的粘合劑的固化良好的特性。
光可聚合性化合物的混合量，相對於100質量份(甲基)丙烯酸酯共聚物，混合量為5~200質量份，進一步優選20~180質量份，進一步優選50~150質量份。若減少光可聚合性化合物的混合量，紫外線等照射後的粘合片剝離性降低，半導體晶片易發生分離不良。另一方面，若增加光可聚合性化合物的混合量，切割時易發生因刮膠導致分離不良，伴隨此現象會發生因反應殘渣引起的微弱膠粘殘留，成為污染的原因。
(2-4)多官能異氰酸酯固化劑
多官能異氰酸酯固化劑，含有2個以上異氰酸酯基，例如可使用芳香聚異氰酸酯、脂肪族聚異氰酸酯、脂環族聚異氰酸酯、它們的二聚體、三聚體、加合物等。
作為芳香族多異氰酸酯，例如有1,3-亞苯基二異氰酸酯、4,4'-二苯基二異氰酸酯、1,4-亞苯基二異氰酸酯、4,4'-二苯基甲烷二異氰酸酯、2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、4,4'-甲苯胺二異氰酸酯、2,4,6-三異氰酸酯甲苯、1,3,5-三異氰酸酯苯、聯茴香胺二異氰酸酯、4,4'-二苯基醚二異氰酸酯、4,4',4”-三苯基甲烷三異氰酸酯、ω,ω'-二異氰酸酯-1,3-二甲基苯、ω,ω'- 二異氰酸酯-1,4-二甲基苯、ω,ω'-二異氰酸酯-1,4-二乙基苯、1,4-四甲基二甲苯二異氰酸酯以及1,3-四甲基氰酸酯。
作為脂肪族聚異氰酸酯，例如有三亞甲基二異氰酸酯、四亞甲基二異氰酸酯、六亞甲基二異氰酸酯、五亞甲基二異氰酸酯、1,2-亞丙基二異氰酸酯、2,3-亞丁基二異氰酸酯、1,3-丁二醇二異氰酸酯、十二亞甲基二異氰酸酯以及2,4,4-三甲基二異氰酸酯。
作為脂環族聚異氰酸酯，例如有3-異氰酸酯甲基-3,5,5-三甲基環己基異氰酸酯、1,3-環戊烷二異氰酸酯、1,3-環己烷二異氰酸、1,4-環己烷二異氰酸酯、甲基-2,4-環己烷二異氰酸酯、甲基-2，6-二異氰酸酯環己烷、4,4'-亞甲基雙(環己基異氰酸酯)、1,4-雙(異氰酸甲酯基)環己烷以及1,4-雙(異氰酸甲酯基)環己烷。
作為二聚體和三聚體、加合物，例如有二苯基亞甲基二異氰酸酯的二聚體、六亞甲基二異氰酸酯的三聚體、三羥甲基丙烷和甲苯二異氰酸酯的加合物、三羥甲基丙烷和六亞甲基二異氰酸酯的加合物。
上述聚異氰酸酯之中，優選具有3個以上聚異氰酸酯基，特別優選六亞甲基二異氰酸酯的三聚體、三羥甲基丙烷和甲苯二異氰酸酯的加合物(adduct)、三羥甲基丙烷和六亞甲基二異氰酸酯的加合物。
多官能異氰酸酯固化劑的混合比，相對於100質量份(甲基)丙烯酸酯共聚物，為0.5~20質量份，優選1~10質量份。若多官能異氰酸酯固化劑為0.5質量份以上，因為粘合力不會過強，所以可以抑制分離不良的發生。若多官能異氰酸酯固化劑為20質量分以下，粘合力不會降低，可以維持切割時半導體晶片的保持性。
(2-5)光聚合引發劑
光聚合引發劑，可使用苯偶姻、苯偶姻烷基醚類、苯乙酮類、蒽醌類、噻噸酮類、縮酮類、二苯甲酮類或者氧雜蒽酮等。
作為苯偶姻，例如有苯偶姻、苯偶姻甲基醚、苯偶姻乙醚、苯偶姻丙基醚等。作為苯乙酮類，例如有苯偶姻烷基醚類、苯乙酮、2,2-二甲氧基-2-苯乙酮、2,2-二乙氧基-2-苯乙酮、1,1-二氯苯乙酮等。作為蒽醌類，例如有2-甲基蒽醌、2-乙基蒽醌、2-叔丁基蒽醌、1-氯蒽醌等。作為噻噸酮類，例如有2,4-二甲基噻噸酮、2,4-二異丙基噻噸酮、2-氯噻噸酮、2,4-二異丙基噻噸酮等。作為縮酮類，例如有苯乙酮二甲基縮酮、苄基二甲基縮酮、苄基聯苯基硫醚、一硫化四甲基秋蘭姆、偶氮二異丁腈、二苄基、雙乙醯、β-抓取蒽醌等。
光聚合引發劑，從溫度23℃開始，以10℃/分鐘的升溫速度升溫至500℃，優選質量減少率為10%時的溫度為250℃以上。後述在加溫程序中以100~150℃將粘貼矽晶片等的粘合片進行加溫時，如果光聚合引發劑發生揮發 或者裂化，後續光照程序中粘合劑層的固化不充分，無法獲得充分降低的粘合力，成為之後分離程序中分離不良的原因。因此，優選具有上述類的性質，不易發生因加溫而引起揮發和裂化的光聚合引發劑。
作為上述溫度為250℃以上的光聚合引發劑，例如有乙酮、1-[9-乙基-6-(2-甲基苯甲醯基)-9H-哢唑-3-基]-，1-(O-乙醯肟)(BASF日本公司製，產品名IRACURE OXE02)、2,4,6-三甲基苯甲醯基-二苯基-氧化膦(BASF日本公司製，產品名LUCRIN TPO)、以及2-羥基-1-{4-[4-(2-羥基-2-甲基-丙醯基)-苄基]-苯基}-2-甲基-丙-1-酮(BASF日本公司製，產品名IRGACUR127)、2-苄基-2-二甲基氨基-1-(4-嗎啉代苯基)-丁酮-1(BASF日本公司製，產品名IRGACURE369)、2-二甲基氨基-2-(4-甲基-苄基)-1-(4-嗎啉-4-基-苯基)-丁-1-酮(BASF日本公司製，產品名IRGACURE379)、雙(2,4,6-三甲基苯甲醯)-苯基氧化膦(BASF日本公司製，產品名IRGACURE819)等。
這其中，特別優選上述溫度為270℃的，乙酮、1-[9-乙基-6-(2-甲基苯甲醯基)-9H-哢唑-3-基]-，1-(O-乙醯肟)(BASF日本公司製，產品名IRACURE OXE02)、2,4,6-三甲基苯甲醯基-二苯基-氧化膦(BASF日本公司製，產品名LUCRIN TPO)、以及2-羥基-1-{4-[4-(2-羥基-2-甲基-丙醯基)-苄基]-苯基}-2-甲基-丙-1-酮(BASF日本公司製，產品名IRGACUR127)。
光聚合引發劑的混合量，相對於100質量份(甲基)丙烯酸酯共聚物， 為1~20質量份，進一步優選0.2~10質量份，進一步優選0.5~5質量份。 若混合量過少，放射線照射後粘合片的剝離性降低，半導體晶片易發生分離不良。另一方面，若混合量過多，光聚合引發劑從粘合劑表面滲出，成為污染的原因。
光聚合引發劑，也可根據需要將1種或者2種以上現有的眾所周知的光聚合促進劑進行組合一起使用。光聚合促進劑，可以使用苯甲酸類和叔胺等。作為叔胺，例如有三乙胺，四乙基五胺，二甲氨基醚等。
粘合劑層的厚度，優選3μm以上100μm以下，特別優選5μm以上20μm以下。若粘合劑層過厚，粘合力會過高，分離性降低。另外，若粘合劑層過薄，分離性能(pickup)會過低，切割時的晶片保持性降低，環形框架和薄片之間會發生剝離。
2.半導體的檢測方法
以下，按順序說明本發明相關的半導體的檢測方法的具體程序。以下所示的半導體的檢測方法為半導體裝置製造程序的一部分。
(1)粘貼程序
首先，在粘貼程序中，將粘合片粘貼於半導體晶片和環形框架。半導體晶片可以為矽晶片以及氮化鎵晶圓，碳化矽晶片，藍寶石晶片等現有常用的矽晶片。在本說明書中，「半導體晶片」含有樹脂密封的封裝基板和 LED基板，玻璃基板等半導體基板。
(2)切割程序
在切割程序中，將半導體晶片進行切割成為半導體晶片。在本說明說中，「半導體晶片」含有MENS(Micro Electro Mechanical Systems)和電晶體，二極體，LED等半導體部件。
(3)吸附程序
在吸附程序中，半導體晶片粘貼於粘合片的狀態下，使所述粘合片與所述載物台相接觸，承載於100~150℃載物臺上吸附固定。此吸附程序，可藉由不將切割程序所得的半導體晶片從粘合片上取下，而將切割程序所用粘合片直接吸附於載物臺上來進行，也可以藉由將切割程序所得的半導體晶片從粘合片上取下後，將其粘貼在其他粘合片上，並將此粘合片吸附於載物臺上來進行。
(4)檢測程序
在檢測程序中，為進行半導體晶片所形成的電路的試驗，吸附程序後一邊將所述載物台於100~150℃加熱一邊對所述半導體晶片的性能進行檢測。加溫時間為例如15分鐘~5小時。
本發明的相關粘合片，因為在加溫情況下基材會發生收縮，固定於環形框架的粘合片會出現張力，所以粘合片不會彎曲變形。另外，因為引起 增粘樹脂軟化的粘合劑層的軟化幾乎或者完全不會發生，不會過度密集於半導體晶片。因此，本發明的檢測方法，伴隨粘合片的變形，可以進行檢測程序的長時間化和防止晶片破損，進而在後述活性光照程序以及分離程序中，藉由照射活性光可以使粘合劑層的粘合力得到充分降低，防止分離不良和膠粘殘留。
(5)活性光照程序
在光照程序中，從基材方面為將紫外線等活性光對光可固化型粘合劑層進行照射。作為紫外線的光源，可使用低壓汞燈，高壓汞燈，超高壓汞燈，金屬鹵化物燈，黑光燈等。
藉由光照，粘合劑層發生三維網狀化而固化，粘合劑層的粘合力降低。 此時，如上所述，因為即使將本發明的相關粘合片進行加溫，也不會過度密集於晶片，所以藉由活性光的照射，粘合力得到充分降低。
(6)分離程序
分離程序，為將半導體晶片從粘合片的粘合劑層進行剝離。此時，因為藉由紫外線等照射本發明的相關粘合片，其粘合力得到充分降低，所以晶片或者部件與粘合劑層間易於剝離，獲得良好分離性，也不會發生膠粘殘留等不良現象。作為分離的方法，例如有將半導體晶片複寫到其他粘合片的方法，從粘合片的內側刮開進行剝離的方法，或者利用檢針等上推的方法。另外，根據需要，可以在分離程序前設置擴展程序。在擴展程序中， 拉伸粘合片使其與半導體晶片之間的間隔擴大，使得分離更易進行。
在分離程序後，藉由晶片粘接將分離的晶片或者部件安裝在引線框上。安裝後，加熱晶片粘接，晶片或者部件和引線框進行加熱粘合。之後，用樹脂將安裝在引線框上的晶片或者部件進行模壓成型。
【實施例】 <實施例1>
根據「表1」所示的混合方式調製光可固化型粘合劑。光可固化型粘合劑塗抹於聚對苯二甲酸製的隔膜上，使乾燥後的粘合層厚度為10μm來進行塗裝。將此粘合層層疊在基材上，於40℃成熟7天，得到粘合片。在基材(K-1)上，使用厚度為30μm的雙軸拉伸聚丙烯薄膜(王子F-科技公司製，FC-201)。
【表1】
[基材]
K-1：雙軸拉伸聚丙烯(王子F-科技公司製FC-201，厚度：30μm)；120℃的熱收縮率為2.0%。
K-2：雙軸拉伸聚丙烯(王子F-科技公司製E-201F，厚度：40μm)；120℃的熱收縮率為1.5%。
K-3：雙軸拉伸聚丙烯(東洋紡織公司製Pylen film-OT P2111，厚度：30μm)；120℃的熱收縮率為3.3%。
K-4：雙軸拉伸聚丙烯(合成品，厚度：30μm)；120℃的熱收縮率為1.1%。
K-5：雙軸拉伸聚丙烯(合成品，厚度：30μm)；120℃的熱收縮率為4.8%。
〔可光固化型粘合劑〕 〔(甲基)丙烯酸酯共聚物〕
A-1：日本瑞翁公司製丙烯酸酯橡膠AR53L；54%的丙烯酸乙酯、19%的丙烯酸丁酯、24%的甲氧基丙烯酸乙酯的共聚物藉由乳化聚合而得。
A-2：綜研化學公司製SK達因1496；96%的2-丙烯酸異辛酯、4%的2-羥基乙基丙烯酸酯的共聚物藉由溶液聚合而得。
〔光可聚合性化合物〕
B-1根上工業公司製UN-905；使以雙季戊四醇五丙烯酸酯為主要成分的丙烯酸酯與異佛爾酮二異氰酸酯(Isophorone Diisocyanate)的三聚體發 生反應所得產物，有15個乙烯基。
B-2：新中村化學公司製A-TMPT；三羥甲基丙烷三丙烯酸酯，有3個乙烯基。
〔多官能異氰酸酯可固化劑〕
C-1：日本聚氨酯公司製CORONATE L-45E；2,4-二異氰酸酯的三羥甲基丙烷加合物。
C-2：三亞甲基二異氰酸酯
〔光聚合引發劑〕
D-1：BASF公司製IRGACURE127；2-羥基-1-{4-[4-(2-羥基-2-甲基-丙醯基)-苄基]-苯基}-2-甲基-丙-1-酮，質量減少率為10%時的溫度為275℃。
D-2：BASF公司製IRGACURE OXE02；乙酮、1-[9-乙基-6-(2-甲基苯甲醯基)-9H-哢唑-3-基]-,1-(O-乙醯肟)，質量減少率為10%時的溫度為320℃。
D-3：BASF公司製LUCIRIN TPO；2,4,6-三甲基苯甲醯基-二苯基-氧化膦，質量減少率為10%時的溫度為270℃。
D-4：BASF公司製IRGACURE651；苄基二甲醛縮苯乙酮，質量減少率為10%時的溫度為185℃。
〔有機矽類接枝共聚物〕
E-1：綜研化學公司製UTMM-LS2；對有機矽分子鏈末端聚合具有(甲基)丙烯醯基的有機矽類低聚物單元，以及甲基丙烯酸甲酯等組成的乙烯基丙烯酸酯單元，由此而得的有機矽類接枝共聚物。
〔增粘樹脂〕
F-1：安原化學製YS Polystar S145；萜烯酚類增粘樹脂，軟化點145℃。
將所得粘合片粘貼于形成虛擬(dummy)電路圖的直徑8英寸×厚度0.1mm的矽晶片和環形框架上。將矽晶片按照與粘合片的粘貼面和反面相接觸來設置於電熱板上，於120℃加溫1小時後，進行切割以及光照、分離各程序。
切割程序的條件如下。
切割裝置：DISCO公司製DAD341
切割刀片：DISCO公司製NBC-ZH205O-27HEEE
切割刀片形狀：外徑55.56mm，刃寬35μm，內徑19.05mm
切割刀片圈數：40,000rpm
切割刀片寄送速度：50mm/秒
切割大小：10mm角
對於粘合片的切口量：15μm
切削水溫度：25℃
切削水量：1.0升/分鐘
光照程序的條件如下。紫外線照射：用高壓汞燈照射，照射量為150mJ/cm2
分離程序的條件如下。切割後的晶片上，粘貼轉印用粘合片(對於矽晶片的粘合力：6.25N/25mm)之後，剝離轉印用粘合片，將晶片轉印。
在加溫程序，進行了以下評估。
(1)粘合片的變形
觀察120℃加溫1小時後的粘合片，根據以下標準進行評估。
◎(優)：加溫後粘合片也不發生"彎曲"和"剝落"。
○(良)：由加溫導致粘合片發生少數"彎曲"和"剝落"。
×(不可)：由加溫導致粘合片發生"彎曲"和"剝落"。
在切割程序及分離程序，進行了以下評估。
(1)晶片保持性
晶片保持性，指在切割程序後，根據保持於粘合片的半導體晶片的殘餘率，根據以下標準進行評估。
◎(優)：晶片飛濺(jump)為5%以下
○(良)：晶片飛濺為5%以上10%以下
×(不可)：晶片飛濺為10%以上
(2)分離性
分離性，指在分離程序中，使用轉印用粘合片將半導體晶片進行轉印，根據轉印成功率(分離成功率)，根據以下標準進行評估。
◎(優)：晶片的分離成功率為95%以上
○(良)：晶片的分離成功率為80%以上95%以下
×(不可)：晶片的分離成功率為80%以下
評估結果如「表1」所示。
實施例1的相關粘合片，加溫程序後的粘合片沒有變形，並且，晶片保持性以及分離性均被評估為優。
<實施例2~25>
基材的材料、(甲基)丙烯酸酯共聚物以及光可聚合性化合物、多官能異氰酸酯可固化劑、光聚合引發劑、有機矽類接枝共聚物的種類或者是否添加，除「表1」所示的變更內容之外，與實施例1同樣方法製造粘合片，進行評估。
結果如表所示。
<比較例1~3，5~10>
作為基材，除使用以下的基材之外，與實施例1同樣方法製造粘合片，進行評估。
結果如表2所示。
K-6：聚對苯二甲酸乙二醇酯(尤尼吉可公司製Emblet PET，厚度：25μm)；120℃的熱收縮率為0.5%
K-7：環烯烴共聚物(郡是公司製F膜，厚度：100μm)；120℃的熱收縮率為0.1%
K-8：二軸拉伸聚丙烯(合成品，厚度：30μm)；120℃的熱收縮率為6.0%
<比較例4>
除不添加有機矽類接枝共聚物，添加增粘樹脂之外，與實施例1同樣方法製造粘合片，進行評估。結果如表所示。
實施例2~25的相關粘合片，加溫程序後粘合片的變形幾乎或者完全沒有發生，良好的晶片保持性以及分離性得到確認。另一方面，比較例1、 2的粘合片，在加溫後粘合片發生了變形。並且，比較例3的粘合片，在加熱後膠帶的一部分發生了剝落。
比較例4~7及9~10粘合片，分離性不良，膠粘殘留也很顯著。比較例8的粘合片，晶片保持性變壞。
本發明的相關粘合片，因為即使在加溫情況下粘合片也沒有發生變形，進而不會過度密集於半導體晶片，所以可藉由紫外線等的照射充分降低粘合劑層的粘合力，得到良好的分離性。因此，本發明的相關粘合片，因為在半導體裝置的製造程序中，對半導體晶片加熱的同時能夠進行性能檢測程序，所以可以在包裝程序前瞭解到高溫狀態下的晶片的異常，可以降低包裝成本。

Claims (9)

  1. 一種用於半導體檢測的耐熱性粘合片，其特徵在於對半導體晶片加熱的同時能夠進行性能檢測程序，此粘合片在基材上具有粘合劑層，此基材於120℃加熱15分鐘後的熱收縮率為1.0%~5.0%，此粘合劑層含有如下物質；100質量份(甲基)丙烯酸酯共聚物、5~200質量份光可聚合性化合物、0.50~20質量份多官能異氰酸酯可固化劑、0.1~20質量份光聚合引發劑、和0~2質量份增粘樹脂。
  2. 請求項1中所述的用於半導體檢測的耐熱性粘合片，其特徵在於，所述基材為雙軸拉伸薄膜。
  3. 請求項1或2中所述的用於半導體檢測的耐熱性粘合片，所述粘合片的粘合劑層含有剝離賦予劑。
  4. 請求項3中所述的用於半導體檢測的耐熱性粘合片，所述剝離賦予劑由有機矽類接枝共聚物組成。
  5. 請求項3或4中所述的用於半導體檢測的耐熱性粘合片，所述剝離賦予劑的添加量相對於100質量份(甲基)丙烯酸樹脂共聚物，為0.1~20質量份。
  6. 請求項1~5中的任意一項所述的用於半導體檢測的耐熱性粘合片，所述多官能異氰酸酯可固化劑具有3個以上異氰酸酯基。
  7. 請求項1~6中的任意一項所述的用於半導體檢測的耐熱性粘合片， 所述光聚合引發劑，從23℃起以10℃/分鐘的升溫速度進行升溫時，其質量減少率為10%的溫度為250℃以上。
  8. 一種半導體的檢測方法，含有以下程序，包括：半導體晶片粘貼於粘合片的狀態下，使所述粘合片與所述載物台相接觸而被承載於100~150℃載物臺上之吸附固定的吸附程序；對所述載物台於100~150℃加熱的同時對所述半導體晶片進行性能檢測之檢測程序；對所述粘合片進行活性光照射之活性光照射程序；和從所述粘合片上分離所述半導體晶片之分離程序；所述粘合片為請求項1~7中的任意一項所述的粘合片。
  9. 請求項8中所述的半導體的檢測方法，所述吸附程序前，進一步具備：將粘合片粘貼於半導體晶片的粘貼程序；和將所述半導體晶片切割成所述半導體晶片的切割程序。
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