TW201601260A - 具有中空部之電路構件及安裝構造體、以及安裝構造體之製造方法 - Google Patents
具有中空部之電路構件及安裝構造體、以及安裝構造體之製造方法 Download PDFInfo
- Publication number
- TW201601260A TW201601260A TW104110627A TW104110627A TW201601260A TW 201601260 A TW201601260 A TW 201601260A TW 104110627 A TW104110627 A TW 104110627A TW 104110627 A TW104110627 A TW 104110627A TW 201601260 A TW201601260 A TW 201601260A
- Authority
- TW
- Taiwan
- Prior art keywords
- circuit member
- sheet
- adhesive layer
- rib
- resin
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229920005989 resin Polymers 0.000 claims description 131
- 239000011347 resin Substances 0.000 claims description 131
- 239000000463 material Substances 0.000 claims description 86
- 239000012790 adhesive layer Substances 0.000 claims description 65
- 229920001187 thermosetting polymer Polymers 0.000 claims description 27
- 238000007789 sealing Methods 0.000 claims description 22
- 239000011521 glass Substances 0.000 claims description 16
- 230000009477 glass transition Effects 0.000 claims description 16
- 239000003566 sealing material Substances 0.000 claims description 16
- 238000003860 storage Methods 0.000 claims description 12
- 239000003365 glass fiber Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 description 54
- 239000003822 epoxy resin Substances 0.000 description 52
- 229920000647 polyepoxide Polymers 0.000 description 52
- 239000000758 substrate Substances 0.000 description 51
- 239000010410 layer Substances 0.000 description 45
- 238000000034 method Methods 0.000 description 34
- 239000000203 mixture Substances 0.000 description 32
- 102100040287 GTP cyclohydrolase 1 feedback regulatory protein Human genes 0.000 description 31
- 101710185324 GTP cyclohydrolase 1 feedback regulatory protein Proteins 0.000 description 31
- 238000010897 surface acoustic wave method Methods 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 18
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 17
- 239000002245 particle Substances 0.000 description 14
- 229920003986 novolac Polymers 0.000 description 12
- 239000000835 fiber Substances 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 9
- 230000000149 penetrating effect Effects 0.000 description 9
- -1 enamel Substances 0.000 description 8
- 239000012778 molding material Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 7
- 238000001721 transfer moulding Methods 0.000 description 7
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 239000011256 inorganic filler Substances 0.000 description 6
- 229910003475 inorganic filler Inorganic materials 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 210000004177 elastic tissue Anatomy 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 229910052902 vermiculite Inorganic materials 0.000 description 5
- 239000010455 vermiculite Substances 0.000 description 5
- 235000019354 vermiculite Nutrition 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229930185605 Bisphenol Natural products 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000748 compression moulding Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000002296 dynamic light scattering Methods 0.000 description 2
- 229920006351 engineering plastic Polymers 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 239000004848 polyfunctional curative Substances 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 150000003505 terpenes Chemical class 0.000 description 2
- 235000007586 terpenes Nutrition 0.000 description 2
- 230000000930 thermomechanical effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 125000002619 bicyclic group Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- KWLSQQRRSAWBOQ-UHFFFAOYSA-N dipotassioarsanylpotassium Chemical compound [K][As]([K])[K] KWLSQQRRSAWBOQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 150000002642 lithium compounds Chemical class 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- IPCXNCATNBAPKW-UHFFFAOYSA-N zinc;hydrate Chemical compound O.[Zn] IPCXNCATNBAPKW-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/082—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising vinyl resins; comprising acrylic resins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/088—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyamides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/09—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/092—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising epoxy resins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/095—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyurethanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/098—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising condensation resins of aldehydes, e.g. with phenols, ureas or melamines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/18—Layered products comprising a layer of metal comprising iron or steel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/12—Layered products comprising a layer of synthetic resin next to a fibrous or filamentary layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/283—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/34—Layered products comprising a layer of synthetic resin comprising polyamides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
- B32B27/365—Layered products comprising a layer of synthetic resin comprising polyesters comprising polycarbonates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/38—Layered products comprising a layer of synthetic resin comprising epoxy resins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/40—Layered products comprising a layer of synthetic resin comprising polyurethanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/42—Layered products comprising a layer of synthetic resin comprising condensation resins of aldehydes, e.g. with phenols, ureas or melamines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/02—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/02—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
- B32B5/024—Woven fabric
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/02—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
- B32B5/026—Knitted fabric
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/22—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed
- B32B5/24—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer
- B32B5/26—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer another layer next to it also being fibrous or filamentary
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/045—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
- B32B2260/02—Composition of the impregnated, bonded or embedded layer
- B32B2260/021—Fibrous or filamentary layer
- B32B2260/023—Two or more layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2260/00—Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
- B32B2260/04—Impregnation, embedding, or binder material
- B32B2260/046—Synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
- B32B2262/02—Synthetic macromolecular fibres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
- B32B2262/02—Synthetic macromolecular fibres
- B32B2262/0261—Polyamide fibres
- B32B2262/0269—Aromatic polyamide fibres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
- B32B2262/10—Inorganic fibres
- B32B2262/101—Glass fibres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
- B32B2262/10—Inorganic fibres
- B32B2262/106—Carbon fibres, e.g. graphite fibres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/54—Yield strength; Tensile strength
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/748—Releasability
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Ceramic Engineering (AREA)
- Textile Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Casings For Electric Apparatus (AREA)
- Laminated Bodies (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
一種電路構件具有:元件,其具有功能區域;蓋部,其呈平板狀且配置成面向前述功能區域;及肋材,其以包圍前述功能區域之方式形成,以於前述功能區域與前述蓋部之間形成空間;其中前述蓋部包含厚度為100μm以下之板片S,且前述板片S在175℃下之拉伸彈性模數Es為10GPa以上。前述板片S在175℃下之拉伸彈性模數Es宜為20GPa以上。
Description
本發明係有關於電路構件及安裝構造體,且有關於內部具有中空部(空間)之電路構件及安裝構造體。
近年來,電子機器進行小型化,且搭載於電子機器上之電路構件亦尋求薄型化、小型化。用以去除行動電話等之雜訊的SAW晶片亦不例外。由於SAW晶片利用在壓電基板(壓電體)上傳播之表面波過濾所希望之頻率,故壓電體上之電極與搭載SAW晶片之電路基板之間需要空間。
為在壓電體上之電極與搭載SAW晶片之電路基板之間確保空間,例如,專利文獻1及2揭示了在壓電體上之電極周圍藉感光性樹脂形成肋圖案,接著在肋材之上部貼上感光性樹脂薄膜而形成蓋部之中空構造體的製造方法。
專利文獻1:國際公開第2011/145750號冊子
專利文獻2:日本特開2013-178526號公報
專利文獻1及2之方法係在蓋部與壓電體上之電極之間,以包圍電極之方式設置肋圖案,以製造電路構件。如圖7所示,該電路構件200透過多數凸塊230安裝在佈線基板220上。肋材213內貫通有導體215,且藉該導體215及凸塊230,可導通電路構件200之電極212及佈線基板220。
安裝在佈線基板220上之電路構件200藉樹脂密封材240密封。例如,在轉移成型中,將含有液狀化或軟化之熱硬化性樹脂之模塑材壓入模具中。
凸塊230之高度通常是50至60μm。液狀化或軟化之模製材穿過凸塊230之間,接著亦填充在電路構件200之蓋部214與佈線基板220之間。此時,模製材強力地推升蓋部214。結果,蓋部214變形,如圖7所示,使電極212與蓋部214之間的空間216變窄。若模製材在該狀態下硬化而形成樹脂密封材240,則會妨礙電路構件之作用。若液狀化或軟化之模製材產生之壓力大,蓋部214亦可能會破損。若蓋部214破損,則液狀化或軟化之模製材會侵入空間216內,以致難以充分確保空間216。
藉以行動電話或數位相機為首之各種電子機器
的小型化,亦尋求電路構件200本身之薄型化。因此,蓋部214之厚度不必說,空間216之高度也必須減少。在此情形下,蓋部214之變形對電路構件性能之影響進一步變大。
本發明之目的在於提供可在蓋部與功能區域之間確保充分空間的電路構件及安裝構造體。
即,本發明之一層面有關於電路構件,其具有:元件,其具有功能區域;蓋部,其呈平板狀且配置成面向前述功能區域;及肋材,其以包圍前述功能區域之方式形成,以於前述功能區域與前述蓋部之間形成空間;其中前述蓋部包含厚度為100μm以下之板片S,且前述板片S在175℃下之拉伸彈性模數Es為10GPa以上。
本發明之另一層面有關於用以形成上述蓋部之板片材料。
本發明之又一層面有關於安裝構造體,其具有第一電路構件,及安裝在前述第一電路構件上之第二電路構件;其中前述第二電路構件具有:元件,其具有功能區域;蓋部,其呈平板狀且配置成面向前述功能區域;及肋材,其以包圍前述功能區域之方式形成,以於前述功能區域與前述蓋部之間形成空間;其中前述蓋部包含厚度為100μm以下之板片s,且前述板片S在175℃下之拉伸彈性模數Es為10GPa以上。
本發明之再一層面有關於安裝構造體之製造方
法,其包含以下步驟:(i)準備第一電路構件及第二電路構件;及(ii)將第一電路構件安裝在前述第二電路構件上;其中前述第二電路構件具有:元件,其具有功能區域;蓋部,其呈平板狀且配置成面向前述功能區域;及肋材,其以包圍前述功能區域之方式形成,以於前述功能區域與前述蓋部之間形成空間;其中前述蓋部包含厚度為100μm以下之板片S,且前述板片在175℃下之拉伸彈性模數Es為10GPa以上。
依據本發明,即使是以樹脂密封電路構件之情形,亦可在蓋部與功能區域之間確保充分之空間。
1‧‧‧元件
1a‧‧‧壓電體
1aa‧‧‧本體部
1ab‧‧‧肋材部份
1b,1b'‧‧‧交叉指形電極
2,2P‧‧‧接著層
3‧‧‧肋材
4‧‧‧蓋部
4P‧‧‧板片材料
5,5a,5b,5b'‧‧‧導體
5bp‧‧‧導體用空間
6‧‧‧空間
7‧‧‧膠帶材
8A,8B‧‧‧樹脂密封材
10‧‧‧電路構件;第二電路構件
17‧‧‧遮罩
20,20A,20B‧‧‧第一電路構件
30,30A,30B‧‧‧凸塊
40‧‧‧接合線
100‧‧‧安裝構造體
200‧‧‧電路構件
212‧‧‧電極
213‧‧‧肋材
214‧‧‧蓋部
215‧‧‧導體
216‧‧‧空間
220‧‧‧佈線基板
230‧‧‧凸塊
240‧‧‧樹脂密封材
Cw‧‧‧蓋部厚度
FA‧‧‧功能區域
Rh‧‧‧肋材高度
Rw‧‧‧肋材寬度
圖1A係顯示本發明一實施形態之電路構件的截面圖。
圖1B係顯示本發明另一實施形態之電路構件的截面圖。
圖2A係顯示本發明另一實施形態之電路構件的截面圖。
圖2B係顯示本發明另一實施形態之電路構件的截面圖。
圖2C係顯示本發明另一實施形態之電路構件的截面圖。
圖2D係顯示本發明另一實施形態之電路構件的截面圖。
圖3係顯示本發明一實施形態之電路構件之製造方法的截面圖。
圖4A係顯示本發明一實施形態之安裝構造體的截面圖。
圖4B係顯示本發明另一實施形態之安裝構造體的截面圖。
圖5A係顯示本發明另一實施形態之安裝構造體的截面圖。
圖5B係顯示本發明另一實施形態之安裝構造體的截面圖。
圖5C係顯示本發明另一實施形態之安裝構造體的截面圖。
圖5D係顯示本發明另一實施形態之安裝構造體的截面圖。
圖5E係顯示本發明另一實施形態之安裝構造體的截面圖。
圖5F係顯示本發明另一實施形態之安裝構造體的截面圖。
圖5G係顯示本發明另一實施形態之安裝構造體的截面圖。
圖5H係顯示本發明另一實施形態之安裝構造體的截面圖。
圖51係顯示本發明另一實施形態之安裝構造體的截面圖。
圖5J係顯示本發明另一實施形態之安裝構造體的截面圖。
圖6係顯示本發明一實施形態之安裝構造體之製造方法的截面圖。
圖7係示意顯示經利用樹脂密封材密封之習知電路構件之情形的截面圖。
本發明之電路構件具有:元件,其具有功能區域;蓋部,其呈平板狀且配置成面向功能區域;及肋材,其以包圍功能區域之方式形成,以於功能區域與蓋部之間形成空間。電路構件亦可具有與元件導通之導體。蓋部包含厚度為100μm以下之板片S。板片S在175℃下之拉伸彈性模數Es為10GPa以上。
電路構件係,例如,內部具有空間之電子零件。電路構件可舉例如:SAW(表面聲波(Surface Acoustic Wave))晶片,BAW(體聲波(Bulk Acoustic Wave))晶片,MEMS(微機電系統(Micro Electro Mechanical Systems)),以CMOS感測器及CCD感測器等為代表之影像感測器等。
以下,關於電路構件,舉SAW晶片為例,一面參照圖1A及圖1B,一面具體地說明。圖1B係圖1A之變形
例,除了接著層2的有無、蓋部4相對於元件1之大小、及元件1與肋材3之位置關係不同以外,與圖1A相同。
電路構件(SAW晶片)10包含:元件(SAW濾波
器)1,其具有功能區域FA(形成在壓電體1a上,且具有至少一對交叉指形電極1b之區域);蓋部4,其呈平板狀且配置成面向功能區域FA;及肋材3,其以包圍功能區域FA之方式形成,以於功能區域FA與蓋部4之間形成空間6。電路構件進一步具有與元件1(在此係構成元件1之交叉指形電極1b)導通之導體5(5a及5b)。
若電路構件為BAW晶片,則元件1係藉2電極夾
住薄膜狀之壓電體(壓電薄膜)之上下面之構造的BAW濾波器,而功能區域FA係其中一面具有電極之區域。若電路構件為MEMS,則該功能區域FA可為具有懸臂(錘)之區域或具有可動電極之區域等。
元件1具有可發揮功能之區域(功能區域FA)。因此,具有如此元件1之電路構件10在其內部需要空間6。即,本發明之電路構件10可為內部具有空間之電子零件。
具有功能區域FA之元件1沒有特別限制。可舉例
如:SAW濾波器,BAW濾波器,各種感測器,機械元件零件、致動器等。此外,元件1亦可為在1基板上集成該等機械元件零件、感測器、致動器等之集成體等。感測器可舉電磁感測器,光感測器,放射線感測器,化學感測器等為例,具體而言,可舉例如:pH電極、加速度計、應變計、
開閉器、揚聲器、雷射、二極體等。機械元件零件可舉例如:齒輪、螺絲、凸輪、軸、彈簧、發條、槓桿等。致動器係可將能量變成物理之運動的裝置,雖然主要具有驅動裝置及控制裝置,但是其他構成沒有特別限制。
壓電體1a之材料可舉例如:氮化鋁,氧化鋅,水
晶,鉭酸鋰、鈮酸鋰及四硼酸鋰等之鋰化合物,砷化鉀,鈦酸鋯酸鉛等。此外,交叉指形電極1b及導體5(5a及5b)之材料可舉例如:鋁、鋁合金、銅、銀、鎳、碳或其化合物,焊料,導電性聚合物,及其混合物等。
肋材3以包圍功能區域FA(在此為交叉指形電極1b)之方式形成,以在功能區域FA與蓋部4之間形成空間6。藉空間6,可發揮功能區域FA之元件1的功能。肋材3係,例如,藉硬化狀態之感光性樹脂形成。
肋材3之高度Rh(具有元件1之功能區域FA的面
與蓋部4之空間6側的面間之距離)沒有特別限制。若元件為SAW濾波器,則肋材3之高度Rh,例如,宜為1至50μm,且以1至30μm更佳,而以1至20μm特佳。若肋材3之高度Rh在該範圍內,則電路構件10容易製造。此外,不會增大電路構件10之尺寸,且容易形成適合元件1發揮功能之空間。
肋材3之寬度Rw(肋材3之空間6側的面及與其面向的面間之距離)沒有特別限制。若元件為SAW濾波器,則肋材3之寬度Rw,例如,宜為1至30μm,而以1至20μm更佳。若肋材3之寬度Rw在該範圍內,則不會增大電路構件10之
尺寸,且容易獲得儘量確保空間6之強度。
肋材3與元件1及/或蓋部4之抵接面之至少一部
份亦可包含後述接著層A。或者,肋材3可兼具接著層A之功能。在此情形下,形成蓋部4之板片材料4P(參照圖3(c))使用藉例如網版印刷法、噴墨法、光刻法等,在表面上格子狀地形成接著層AP(2P)之板片材料。接著層AP可藉含有例如未硬化或半硬化狀態之感光性樹脂之接著劑構成。以具有板片材料4P之接著層AP(2P)的面面向功能區域FA之方式,接合元件1及板片材料4P,接著藉活性光線之照射等,使接著層AP硬化。藉此,元件1及蓋部4透過格子狀之接著層A(2)接合,並且接著層A(2)具有作為肋材3之功能。
亦可在元件1及蓋部4接合後,進一步照射活性光線,以促進感光性樹脂之硬化。
肋材3可藉將壓電體1a切削或蝕刻成框狀而形
成(參照圖5B至5E)。在此情形下,肋材3藉與壓電體1a相同之材料形成。形成框狀之肋材3後,在該框內形成交叉指形電極1b及導體5a。
蓋部4呈平板狀,且至少配置成面向藉肋材3包圍之功能區域FA。蓋部4包含板片S。板片S之厚度在100μm以下,且,在175℃下之拉伸彈性模數Es為10GPa以上。由薄型化之觀點來看,板片S之厚度宜為50μm以下,而以35μm以下更佳。此外,板片S之厚度宜為5μm以上。
175℃係轉移成型等之樹脂密封的一般溫度。因
此,若蓋部4包含在175℃下之拉伸彈性模數Es為10GPa以上之板片S,則進行樹脂密封時之蓋部4的變形變小,可在蓋部4與功能區域FA之間確保充分之空間6。
板片S在175℃下之拉伸彈性模數Es(以下,只稱
為拉伸彈性模數Es)宜為20GPa以上,且以30GPa以上更佳,而以50GPa以上特佳。此外,拉伸彈性模數E係藉依據JIS K 7127之方法測量的數值(以下相同)。試驗機可使用INSTRON公司製之拉伸試驗機。若板片S包含感光性樹脂及/或熱硬化性樹脂,則拉伸彈性模數Es為含有硬化狀態之感光性樹脂及/或熱硬化性樹脂之板片S的物性值。
拉伸彈性模數Es可依據藉肋材3包圍之部份的
面積S(以下,只稱為面積S)之大小,在10GPa以上之範圍內適當設定。若面積S大,則拉伸彈性模數Es亦宜大,而若面積S小,則拉伸彈性模數Es亦可比較小。即,面積S與拉伸彈性模數Es可說有成正比之關係。例如,若面積S為小於0.2mm2,則拉伸彈性模數Es可為10GPa以上,而若為0.2mm2以上且小於4mm2,則拉伸彈性模數Es宜為20GPa以上,且若面積S為4mm2以上,則拉伸彈性模數Es宜為30GPa以上。
板片S之材料可舉例如:樹脂、陶瓷、矽、玻璃、
纖維強化樹脂及金屬等。其中,就拉伸彈性模數Es較高之方面而言,板片S之材料宜為選自於由陶瓷、矽、玻璃、纖維強化樹脂及金屬所構成群組中之至少1種,而以玻璃或纖維強化樹脂更佳。纖維強化樹脂中,以玻璃纖維強化樹脂
(GFRP)為特佳。
板片S所使用之陶瓷可舉例如:氧化鋁、氮化鋁、
氮化矽、氮化矽、氮化硼、氧化鋯等。
板片S所使用之金屬可舉例如:鋁、銅、不鏽鋼、
鐵及蒸鍍或鍍敷有該等金屬之有機物等。若使用金屬板作為板片S,則藉絕緣材料(如氧化鋁、氮化硼類之陶瓷材料及絕緣性有機材料等)被覆金屬板之表面等,可確保蓋部4之絕緣性。此外,藉使用絕緣性有機材料作為後述之接著層A,亦可確保蓋部4之絕緣性。
板片S所使用之樹脂係,例如,感光性樹脂、熱
可塑性樹脂或熱硬化性樹脂。纖維強化樹脂包含例如上述樹脂,及高彈性纖維(例如,聚芳醯胺纖維、玻璃纖維、氟纖維、聚醯亞胺纖維、碳纖維、聚苯硫纖維等)。
纖維強化樹脂所使用之高彈性纖維可為短纖維
及長纖維中任一種纖維。此外,高彈性纖維亦可成形為織物或編物來使用。依需要前處理高彈性纖維後,使感光性樹脂、熱可塑性樹脂或熱硬化性樹脂含浸於高彈性纖維之纖維間等,藉此可製得纖維強化樹脂。由與蓋部4與肋材3(或者,如後述,若蓋部4包含接著層A,則為接著層A)之接著性的觀點來看,纖維強化樹脂宜包含環氧樹脂組成物。
熱可塑性樹脂可使用耐熱性高之所謂工程塑膠。
工程塑膠可舉聚醯亞胺、聚醯胺、聚碳酸酯、芳香族聚酯等之所謂液晶聚合物等為例。
感光性樹脂只要是可藉光能硬化之樹脂即可,沒
有特別限制。可舉丙烯酸酯化合物、甲基丙烯酸酯化合物、及感光性聚醯亞胺樹脂等之光聚合物為例。
雖然熱硬化性樹脂沒有特別限制,但可包含環
氧樹脂、聚醯亞胺、酚樹脂、聚矽氧樹脂、三聚氰胺樹脂、尿素樹脂、醇酸樹脂、聚胺基甲酸酯、不飽和聚酯等作為主劑。其中,就具有優異彈性模數之方面而言,以環氧樹脂為佳。該等樹脂可單獨使用,亦可組合2種以上使用。
熱硬化性樹脂一般作成組成物使用。組成物中
可摻合熱硬化性樹脂、硬化劑、硬化促進劑及溶劑等。例如,在環氧樹脂中摻合:作為硬化劑之酚樹脂、酸酐、胺化合物、二氰二醯胺等;作為硬化促進劑之咪唑系促進劑、磷系促進劑、鏻鹽系促進劑、雙環式脒類及其衍生物、有機金屬錯合物、聚胺之尿素化物等;作為溶劑之二乙醚、二異丙醚、四氫呋喃等之醚類等,可製得環氧樹脂組成物。
雖然環氧樹脂沒有特別限制,但可使用,例如,
雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚AD型環氧樹脂、萘型環氧樹脂、聯苯型環氧樹脂、縮水甘油胺型環氧樹脂、脂環式環氧樹脂、二環戊二烯型環氧樹脂、酚醛型環氧樹脂、聚醚型環氧樹脂、聚矽氧變性環氧樹脂等。該等樹脂可單獨使用,亦可組合2種以上使用。其中,以萘型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚AD型環氧樹脂為佳,而以雙酚A型環氧樹脂、雙酚F型環氧樹脂、萘型環氧樹脂為更佳。
雖然酚樹脂沒有特別限制,但以酚醛清漆樹脂為
佳。酚醛清漆樹脂係使酚類或萘酚類(例如,酚、甲酚、萘酚、烷酚、雙酚、萜烯酚等)與甲醛縮合聚合而得者。更具體而言,可舉例如:酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、雙酚A酚醛清漆樹脂、芳烷基酚醛清漆樹脂、聯苯酚醛清漆樹脂、萜烯酚酚醛清漆樹脂、α-萘酚酚醛清漆樹脂、β-萘酚酚醛清漆樹脂等。該等樹脂可單獨使用,亦可組合2種以上使用。
蓋部4亦可由板片S,及其他材料(例如,在175
℃下之拉伸彈性模數E(以下,只稱為拉伸彈性模數E)比10GPa小(例如,10MPa以上且小於5,000MPa)之材料)的積層體形成。其他材料亦可為片狀物。拉伸彈性模數E比10GPa小之片狀物沒有特別限制,可舉含有如上述之感光性樹脂、熱可塑性樹脂或熱硬化性樹脂等之樹脂板為例。
蓋部4係藉例如玻璃纖維強化樹脂製板(板片S)、
玻璃板(板片S)、或金屬板(板片S)等之各一層(一片)的板片S構成。此外,蓋部4亦可為多數板片S之積層體。如此之蓋部4可舉藉以下者構成之積層體為例:2片玻璃纖維強化樹脂製板(板片S),玻璃板(板片S)及樹脂板,2片玻璃板(板片S)及介於其間之樹脂板,金屬板(板片S)及樹脂板,2片金屬板(板片S)及介於其間之樹脂板,或,玻璃板(板片S)及金屬板(板片S)以及介於其間之樹脂板等。
蓋部4之主面大小可與藉肋材3包圍之部份的面
積S相同,或比該面積S大,沒有特別限制。蓋部4之厚度
Cw(相對向之2主面間之距離)宜為5μm至3mm,且以5μm至500μm為更佳,而以5至400μm為特佳。若元件1為SAW濾波器,則蓋部4之厚度Cw可為例如5至100μm。若蓋部4之厚度Cw在該範圍內,則電路構件容易薄型化,並且在後述密封步驟中,蓋部4之變形可進一步減少。
就確保空間6之方面而言,元件1及/或蓋部4與肋材3宜無間隙地接著。因此,元件1及/或蓋部4與肋材3之抵接面之至少一部份宜具有接著層A(2)。若肋材3藉具有接著性之材料(例如,未硬化或半硬化狀態之感光性樹脂)形成,則肋材3具有作為接著層之功能,因此電路構件10亦可不另外設置接著層A。
雖然構成接著層A之接著劑沒有特別限制,但可
舉未硬化或半硬化狀態之上述熱硬化性樹脂為例。其中,就接著性之方面而言,構成接著層A之接著劑宜含有環氧樹脂組成物。就蓋部4與肋材3之接著性的方面而言,以蓋部4與接著層A均含有硬化狀態之環氧樹脂組成物為特佳。此外,若接著層A含有熱硬化性樹脂,則以下之物性值係含有硬化狀態之熱硬化性樹脂之接著層A的物性值。
接著層A在175℃下的拉伸彈性模數Ea(以下,只
稱為拉伸彈性模數Ea)宜為10MPa以上,而以100MPa以上為更佳。因為在進行電路構件10之樹脂密封時,接著層之變形變小,可抑制蓋部4之位置偏移。雖然拉伸彈性模數Ea沒有特別限制,但可比板片S之拉伸彈性模數Es小。例
如,拉伸彈性模數Ea可小於20GPa,可小於10GPa,亦可小於5GPa以下。此外,由處理性之觀點來看,接著層A在室溫下之拉伸彈性模數Ea'宜為1至20GPa。
接著層A之玻璃轉移溫度Tga宜為80℃以上,且
以120℃以上為更佳,而以樹脂密封時所施加之溫度以上(例如,175℃以上)為特佳。因為可抑制彈性模數降低,而進一步提高抑制蓋部4之位置偏移的效果。此外,玻璃轉移溫度Tga係藉DMA法,在升溫速度2℃/分,頻率1Hz之測量條件下測量的數值(以下相同)。
若在蓋部4與肋材3之抵接面之至少一部份具有
接著層A,則在接著層A之玻璃轉移溫度Tga以下之溫度條件下,接著層A之線膨脹係數CTEa宜為60ppm/℃以下,而以50ppm/℃以下為更佳。接著層A之線膨脹係數CTEa可為1ppm/℃以上,可為10ppm/℃以上,亦可為20ppm/℃以上。
在上述情形下,進一步,在接著層A之玻璃轉移
溫度Tga以下之溫度條件下,線膨脹係數CTEa與板片S之線膨脹係數CTEs的差宜為50ppm/℃以下,且以40ppm/℃以下為更佳,而以30ppm/℃以下為特佳。雖然線膨脹係數CTEa與線膨脹係數CTEs之差以小為佳,但例如,可為1ppm/℃以上,亦可為10ppm/℃以上。若線膨脹係數CTEa滿足上述範圍,則可在電路構件10之樹脂密封步驟或安裝步驟中,抑制蓋部4之接著不良(例如,產生破裂或剝離等)及翹曲,且良好地保持電路構件10之空間6。此外,在接著層A之玻璃轉移溫度Tga以下之溫度條件下,板片S之線膨脹係數
CTEs係例如1至30ppm/℃。
若接著層A配置在蓋部4與肋材3之抵接面的至
少一部份上,則由接著性之觀點來看,在接著層A之玻璃轉移溫度Tga以下之溫度條件下,接著層A之線膨脹係數CTEa宜在板片S之線膨脹係數CTEs與肋材3之線膨脹係數CTEr之間(CTEr>CTEa>CTEs)。肋材3之線膨脹係數CTEr係例如20至60ppm/℃。
線膨脹係數CTE可藉依據JIS K 7197之熱機械之
分析裝置測量。具體而言,線膨脹係數CTE係就2mm×5mm×20mm之試驗片,使用熱機械之分析裝置(例如,Hitachi High-Tech Science公司(股)製,TMA7100),在壓縮模式、升溫速度2.5℃/分、負載49mN之條件下測量而得。
由接著性及薄型化之觀點來看,接著層A之厚度
宜為例如100μm以下。其中,接著層A之厚度宜為0.1μm至50μm,且以1μm至30μm為更佳,而以3μm至20μm為特佳。
由抑制蓋部4之變形的觀點來看,板片S與接著層A(2)之厚度比(板片S/接著層A)宜為0.1至1000,且以0.2至100為更佳,而以0.5至10為特佳。
導體5(5a及5b)與元件1(在此係構成元件1之交叉指形電極1b)導通。導體5亦如後所述,透過凸塊30或接合線40(參照圖5I及5J),與第一電路構件20導通。
導體5(5a及5b)係藉例如導電性糊或金屬粒子等
之導電性材料形成。雖然在圖1中,導體5b貫通肋材3之內
部,但不限於此,可配置在肋材3之空間6側的表面上,亦可配置在未面向肋材3之空間6的表面上。導體5b可貫通元件1之內部,亦可貫通蓋部4之內部(參照圖5B等)。
如圖2A所示,電路構件10宜黏貼在膠帶材7上。膠帶材7係用以在例如到安裝於後述第一電路構件為止的期間,暫時固定電路構件10。
使用膠帶材7之情形的具體實施態樣如下所述。
首先,將多數電路構件10黏貼在膠帶材7上,再藉例如後述之樹脂密封材8A密封電路構件10(參照圖2C及2D)。接著,依需要削去存在電路構件10之表面的樹脂密封材8A,使壓電體1a及/或蓋部4露出後,進行切割,使樹脂密封後之電路構件10單片化。在第一電路構件上安裝單片化後之電路構件10。將電路構件10安裝在第一電路構件上時,由膠帶材7剝離電路構件10。膠帶材7之剝離,例如,可在將電路構件10樹脂密封後進行,可在使壓電體1a及/或蓋部4露出後進行,亦可在切割後進行。
膠帶材7之構成沒有限制,例如,可為基材片與
黏著層之積層體。黏著層宜由黏著力因加熱或紫外線照射而減少之黏著成分形成。如此之膠帶材7可舉日東電工公司(股)製之REVALPHA(登錄商標),日東電工公司(股)製之PROWELL(登錄商標)等為例。雖然在圖2A中,電路構件10之蓋部4黏貼在膠帶材7上,但不限於此。例如,如圖2B所示,元件1亦可黏貼在膠帶材7上。
電路構件10可藉樹脂密封材8A密封。在圖2C及2D中,顯示電路構件10黏貼在膠帶材7上,且,係藉樹脂密封材8A密封著之態樣。
樹脂密封材8A沒有特別限制,可舉例如:含有
熱硬化性樹脂、硬化劑、硬化促進劑、無機填充劑等之組成物的硬化物。熱硬化性樹脂、硬化劑、硬化促進劑沒有特別限制,可同樣舉前述熱硬化性樹脂、硬化劑、硬化促進劑為例。無機填充劑,除了熔融矽石以外,可使用結晶矽石、氧化鋁、氧化鎂、氮化矽等。
樹脂密封材8A之密封方法沒有特別限制。例如,
可藉轉移成型法、壓縮成型法、網版印刷法、底部填充法、接合法、浸塗法等,將未硬化或半硬化狀態之樹脂密封材8A配置在電路構件10之周圍。其中,以使用壓縮成型法為佳。底部填充法亦可使用已成形為片狀等之未硬化或半硬化狀態的樹脂密封材8A。
本發明之板片材料4P係用以形成上述蓋部4之板片材料。即,板片材料4P包含上述板片S之前驅物的板片SP,且具有與蓋部4同樣之構成。若板片S含有熱硬化性樹脂及/或感光性樹脂,則板片SP可含有未硬化或半硬化狀態之熱硬化性樹脂及/或感光性樹脂。含有未硬化或半硬化狀態之熱硬化性樹脂及/或感光性樹脂的板片材料4P,例如,在載置於肋材3之端部後,藉加熱及/或照射活性光線而硬化形
成蓋部4。
板片材料4P,由補強之觀點來看,宜含有硬化狀
態之熱硬化性樹脂及/或感光性樹脂。板片材料4P,由與肋材3等之接著性的觀點來看,可含有未硬化或半硬化狀態之熱硬化性樹脂及/或感光性樹脂。
板片材料4P可包含接著層AP。接著層AP在電路
構件10中形成接著層A。即,接著層AP可含有未硬化或半硬化狀態之熱硬化性樹脂。所謂半硬化狀態係雖然未完全硬化,但已喪失流動性之狀態。
若接著層AP含有未硬化或半硬化狀態之熱硬化
性樹脂,則在常溫(例如,20℃)以上,且接著層AP之硬化溫度以下的溫度條件下,接著層AP之儲存剪切彈性模數Ga'宜為0.05至10MPa。在相同條件下,接著層AP之損失剪切彈性模數Ga"與儲存剪切彈性模數Ga'之比:Ga"/Ga'宜為0.1至2.0。
儲存剪切彈性模數Ga'及損失剪切彈性模數Ga"
在(常溫+20℃)至(接著層AP之硬化溫度-20℃)之溫度條件下,宜滿足上述範圍。因為可容易抑制接著層AP之滲透或滲出,且容易與肋材3或元件1接著。上述溫度條件亦可為例如50至120℃。
其中,在接著層AP之接著性或黏性(黏著劑之瞬
間接著性)展現之溫度以上的條件下,特別在將板片材料4P接著在肋材3或元件1上時的溫度條件(接著溫度)下,接著層AP之儲存剪切彈性模數G'及上述Ga"/Ga'宜在上述範圍
內。因為容易進一步抑制接著層AP之滲透或滲出。
由容易抑制接著層AP之滲透或滲出及容易接著
之觀點來看,上述溫度條件下之接著層AP之儲存彈性模數Ga'以0.1至5MPa為更佳。上述Ga"/Ga'以0.2至1.9為更佳,而以0.3至1.8為特佳。
儲存剪切彈性模數Ga'及損失剪切彈性模數Ga"
可藉依據JIS K 7244之黏彈性計測量裝置測量。具體而言,儲存剪切彈性模數Ga'及損失剪切彈性模數Ga"係就直徑8mm×1mm之試驗片,使用黏彈性計測量裝置(例如,TA Instruments公司製,ARES-LS2),在頻率1Hz、升溫速度10℃/分之條件下測量而得。
接著層AP係含有例如熱硬化性樹脂、硬化劑、
硬化促進劑及無機填充劑等之組成物。由抑制接著層AP之流動變形的觀點來看,無機填充劑之累積95體積%粒徑D95(以下,稱為粒徑D95)宜比接著層之厚度小,且平均粒徑D50宜在接著層厚度之1/3以下。無機填充劑之摻合量宜相對於100質量份之熱硬化性樹脂為2至2000質量份。平均粒徑D50係在藉動態光散射法之粒度分布測量裝置求得之體積粒度分布中的中徑。粒徑D95係在藉動態光散射法之粒度分布測量裝置求得的體積粒度分布中,累積%成為95體積%時之粒徑。
例如,若接著層AP之膜厚為10μm,則由提高組
成物之透明性的觀點來看,就無機填充劑而言,其粒徑D95宜為3.0μm以下,平均粒徑D50宜為1μm以下,且摻合量宜
相對於100質量份之熱硬化性樹脂為2至600質量份。若使用由如此之組成物形成之接著層AP及透明玻璃板(板片S)所構成的板片材料4P形成蓋部,則可透過板片材料4P,進一步蓋部4觀看電路構件之內部構造。
例如,在電路構件10之製造方法中,若形成貫通
蓋部4之導體5b,則在載置板片材料4P而形成蓋部4後,由蓋部4之其中一主面側,藉照射雷射等形成用以形成導體5b之空間5bp。此時,利用設置在元件1或肋材3上之對齊記號進行對位。若蓋部4之透明性高,則可由電路構件10之外部清楚地辨識對齊記號,因此可藉高位置精度形成空間5bp。
以下舉SAW晶片為例,一面參照圖3,一面說明電路構件10之製造方法。
如圖3(a)所示,首先,準備具有功能區域FA(形
成在壓電體1a上,且具有至少一對交叉指形電極1b之區域)之元件1(SAW濾波器)。元件1上形成有導體5a。導體5a與元件1(在此為構成元件1之交叉指形電極1b)導通。
在壓電體1a之具有交叉指形電極1b之面的至少
與肋材3抵接之部份上,可藉網版印刷、噴墨法、光刻法等成形接著層AP。接著層AP亦可藉上述方法直接形成在元件1上,亦可另外將包含成形為對應形狀之接著層AP的板片黏貼在元件1上而形成。在元件1與肋材3之抵接面的至少一部份上形成接著層AP之方法不限於此,可舉在板片材料4P上形成肋材3之前驅物及接著層AP,接著使用它形
成蓋部4之方法為例。該方法將在以下說明。
接著,在元件1上,以包圍功能區域FA之方式,
形成肋材3(參照圖3(b))。圖3(b)顯示肋材3之一部份位在導體5a上之情形。在此情形下,後述導體5b以貫通肋材3內部之方式形成,或者,形成在肋材3之空間6側的表面上。此外,雖然本實施形態顯示導體5b以貫通肋材3內部之方式形成的情形,但不限於此。
肋材3,例如,可藉以下方法形成:在元件1之具
有功能區域FA的面上,塗布感光性樹脂或積層感光性樹脂薄膜後,依需要施加遮罩,接著照射活性光線,使曝光部硬化。在此情形下,例如,亦可使用如圖3(b)所示之遮罩17,同時形成用以形成貫通肋材3內之導體5b的空間5bp。
肋材3可藉將壓電體1a切削成框狀而形成。在此
情形下,亦可在形成框狀之肋材3後,在該框內形成交叉指形電極1b及導體5a。
肋材3亦可藉接著層A形成。在此情形下,肋材3
在下一步驟之板片材料4P的載置步驟中形成。即,使用接著層AP形成格子狀之板片材料4P,接著以板片材料4P之具有接著層AP的面呈面向功能區域FA之方式,接合元件1及板片材料4P。接著,依需要使之硬化,藉此形成由接著層A構成之肋材3。在該等情形下,藉在肋材3上照射雷射而形成孔,可形成空間5bp。此外,空間5bp之形成亦可在下一板片材料4P之載置步驟後進行。
下一步驟之板片材料4P的載置步驟中,亦可形成
肋材3及接著層A(未圖示)。接著層A形成在肋材3與元件1之抵接面的至少一部份上。在此情形下,板片材料4P使用一材料,該材料具有藉感光性樹脂等形成格子狀之肋材3的前驅物,及肋材3之前驅物之端面中,形成在抵接元件1之部份上的接著層AP。以具有接著層AP之面呈面向功能區域FA之方式,將板片材料4P載置在元件1上,接著透過接著層AP接合元件1及肋材3。接著,依需要使之硬化,藉此形成肋材3,及,在肋材3與元件1之抵接面之至少一部份的接著層A。自此以後之步驟與上述者相同。
接著,以覆蓋肋材3之與元件1接合之端部的相
反側端部全體之方式,載置用以形成蓋部4之板片材料4P(圖3(c))。若板片材料4P具有接著層AP(2P),則以板片材料4P之具有接著層AP(2P)之面呈面向肋材3之端部的方式,將板片材料4P載置在肋材3之端部上。接著,在空間5bp中填充導電性材料而形成導體5b。最後,藉將蓋部4切斷成所希望形狀,可製得電路構件10(圖3(d))。
若板片材料4P包含含有感光性樹脂之板片SP,
則將板片材料4P載置於肋材3之端部後,依需要施加遮罩,接著照射活性光線使之硬化,藉此可形成蓋部4。此外,若板片材料4P包含含有熱硬化性樹脂之板片SP,則將板片材料4P載置於肋材3之端部,接著加熱而硬化及接著,藉此可形成蓋部4。
最後,可藉樹脂密封材8A密封電路構件10。密封方法沒有特別限制,可舉與上述方法相同之方法為例。
本發明之安裝構造體具有第一電路構件,及安裝在第一電路構件上之第二電路構件。
第一電路構件係選自於由例如半導體元件、半
導體封裝件、玻璃基板、樹脂基板、陶瓷基板及矽基板所構成群組中之至少1種。該等第一電路構件可在其表面上,形成有如ACF(異向性導電薄膜)或ACP(異向性導電糊)類之導電材料層。樹脂基板可為剛性樹脂基板,亦可為撓性樹脂基板,且可舉例如:環氧樹脂基板(例如,玻璃環氧基板)、雙馬來亞醯胺三氮雜苯基板、聚醯亞胺樹脂基板、氟樹脂基板等。第一電路構件亦可為在內部具有半導體晶片等之零件內建基板。第二電路構件係例如上述電路構件10。
即,安裝構造體可具有在各種第一電路構件上
搭載有第二電路構件之板載晶片(CoB)構造(包含晶圓載晶片(CoW)、膜載晶片(CoF)、玻璃覆載晶(CoG)),晶片堆疊(CoC)構造,封裝件載晶片(CoP)構造及封裝件堆疊(PoP)構造。安裝構造體亦可為如在搭載有第二電路構件之第一電路構件上,進一步積層第一電路構件及/或第二電路構件類的多層安裝構造體。
安裝構造體之一實施形態顯示在圖4A及4B中。
在圖4A中,第二電路構件(電路構件10)透過與貫通肋材3之導體5b導通的凸塊30接合蓋部4及第一電路構件20,藉此安裝在第一電路構件20上。圖4B係圖4A之變形例,且除了接
著層2之有無、蓋部4對元件1之大小及元件1與肋材3之位置關係不同以外,與圖4A相同。
安裝構造體100可密封電路構件10,並且具有填
充在蓋部4與第一電路構件20之間的樹脂密封材8B。樹脂密封材8B可舉與樹脂密封材8A相同者為例。亦可將藉樹脂密封材8A密封之電路構件10安裝在第一電路構件20上後,進一步藉樹脂密封材8B密封電路構件10。
凸塊30之高度可為例如40至70μm。凸塊30之材
料可舉焊料球為例。凸塊30之配置沒有特別限制,只要配置在與導體5導通之位置即可。
安裝構造體100之構成不限於此,安裝構造體
100亦可具有如圖5A至5J所示之構成。即,在圖5A中,在元件1(壓電體1a)上形成有導體5b。電路構件10透過與貫通元件1之導體5b導通的凸塊30接合,藉此安裝在第一電路構件20上。
在圖5B中,藉切削或蝕刻元件1(壓電體1a)形成
肋材。在元件1之肋材部份1ab及本體部1aa上分別形成有導體5b。電路構件10透過與貫通元件1之本體部1aa之導體5b導通的凸塊30A,安裝在第一電路構件20A上,且透過與貫通肋材部份1ab之導體5b導通的凸塊30B,安裝在第一電路構件20B上。
在圖5C中,與圖5B同樣地,藉切削或蝕刻元件
1(壓電體1a)形成肋材。電路構件10透過與貫通元件1之本體部1aa之導體5b導通的凸塊30,安裝在第一電路構件20上。
在圖5D中,與圖5B同樣地,藉切削或蝕刻元件
1(壓電體1a)形成肋材。電路構件10透過導體5b導通電極對中之一交叉指形電極1b及凸塊30A,且透過凸塊30A安裝在第一電路構件20A上。此外,電路構件10透過導體5b'導通電極對中之另一交叉指形電極1b'(未圖示)及凸塊30B,且透過凸塊30B安裝在第一電路構件20B上。再者,在圖示例中,導體5b以貫通本體部1aa之方式形成,而導體5b'以沿肋材部份1ab之空間6側表面的方式形成。
在圖5E中,與圖5B同樣地,藉切削或蝕刻元件
1(壓電體1a)形成肋材。電路構件10具有導體5b,且導體5b包括以沿肋材部份1ab之空間6側表面之方式形成的部份,及以貫通蓋部4之方式形成的部份。電路構件10透過與導體5b導通之凸塊30,安裝在第一電路構件20上。
在圖5F中,藉接著層A(2)形成肋材3,且在由元
件1(壓電體1a)及接著層A(2)形成之肋材3上,分別形成有導體5b。電路構件10透過與貫通元件1之導體5b導通的凸塊30A,安裝在第一電路構件20A上,且透過與貫通接著層A(2)之導體5b導通的凸塊30B,安裝在第一電路構件20B上。
在圖5G及5H中,分別與圖5F同樣地,藉接著層
A(2)形成肋材3。在圖5G中,電路構件10透過與貫通元件1(壓電體1a)之導體5b導通的凸塊30,安裝在第一電路構件20上。在圖5H中,電路構件10透過與貫通接著層A(2)之導體5b導通的凸塊30,安裝在第一電路構件20上。
在圖5I及5J中,藉接合線40取代凸塊30來連接電
路構件10及第一電路構件20。在圖5I中,在元件1(壓電體1a)上形成有導體5b,而在圖5J中,在肋材3上形成有導體5b。另外,亦可藉ACF或ACP取代凸塊30及接合線40來連接電路構件10及第一電路構件20。圖5A至5J所示之電路構件10亦可藉樹脂密封材8A及/或8B密封。
以下一面參照圖6,一面說明安裝構造體之製造方法。
圖6顯示製造圖4A所示之安裝構造體的方法。安裝構造體之構成及製造方法不限於此。
首先,準備第二電路構件(圖6(a))。第二電路構
件係例如電路構件10。若電路構件10藉樹脂密封材8A密封(參照圖2C及2D),則可沿各主面削去存在壓電體1a之主面上及/或蓋部4之主面上的樹脂密封材8A,先使壓電體1a及/或蓋部4露出。
接著,在蓋部4之與導體5導通之位置,形成用以
設置凸塊30之導通墊(未圖示),及凸塊30(圖6(b))。凸塊30可藉噴墨法、網版印刷、轉印法、及鍍敷法等,形成在蓋部4或第一電路構件20之預定位置上。
然後,透過凸塊30將第二電路構件10搭載在第
一電路構件20上,接著經過加熱步驟及冷卻步驟,將第二電路構件10安裝在第一電路構件20上。若電路構件10如圖2A至2D所示地保持在膠帶材7上,則由電路構件10剝離膠帶材7後,將電路構件10安裝在第一電路構件20上。膠帶材
7之剝離可在形成凸塊30前,可在形成凸塊30後、在搭載於第一電路構件20上前,亦可在搭載於第一電路構件20上後。
若安裝多數第二電路構件10在第一電路構件20
上,則可在第二電路構件10之間,及,蓋部4與第一電路構件20之間,填充模製材(未硬化或半硬化狀態之樹脂密封材8B)後,使之硬化而密封第二電路構件10(圖6(c))。
密封方法沒有特別限制,可舉上述之方法為例。
其中,就尺寸精度之觀點而言,宜使用轉移成型法。轉移成型法在模製材壓入模具時,模製材之壓力施加在蓋部4上,使空間6容易變形。由於蓋部4包含具有高拉伸彈性模數之板片S,即使施加高壓力(例如,0.1MPa以上,由生產性等之觀點來看為1MPa以上,進一步5MPa以上。上限可為,例如,20MPa以下,進一步15MPa以下),蓋部4之變形亦小。
模製材之硬化宜在50至200℃,而以100至175℃
更佳下,進行1至15分鐘。依需要,亦可進行100至200℃,30分至24小時之後硬化。
若安裝多數第二電路構件10在第一電路構件20
上,亦可在樹脂密封後,就每一個第二電路構件10切割第一電路構件20,以使安裝構造體單片化。
接著,依據實施例,更具體地說明本發明。惟,以下之實施例不限制本發明。
準備SAW晶片,該SAW晶片具有SAW濾波器(厚度200μm,大小1.4×1.1mm),肋材(Rh:10μm,Rw:10μm),及與SAW濾波器上之交叉指形電極導通的導體。此外,肋材之材質係感光性聚醯亞胺樹脂,而藉肋材包圍之部份的面積s為1mm2。
接著,準備GFRP基板1(板片SP)及GFRP基板
2(板片SP)之積層體,作為蓋部之材料(板片材料)。GFRP基板1及GFRP基板2含有之樹脂呈半硬化狀態。將積層體載置在肋材之端部,使GFRP基板1與肋材相接。接著,一面加熱至70℃一面加壓,以接著GFRP基板1及GFRP基板2之積層體與肋材之端部。然後,加熱至180℃使GFRP基板1及GFRP基板2含有之樹脂硬化而形成蓋部(厚度45μm,大小1.0×1.0mm)。
GFRP基板1係藉玻璃纖維強化後之環氧樹脂片,
厚度為20μm,硬化後之拉伸彈性模數Es係21GPa,且所使用之環氧樹脂組成物硬化後的玻璃轉移溫度Tgs係188℃。
GFRP基板2係藉玻璃纖維強化後之環氧樹脂片,
厚度為25μm,硬化後之拉伸彈性模數Es係21GPa,且所使用之環氧樹脂組成物硬化後的玻璃轉移溫度Tgs係188℃。
GFRP基板1及GFRP基板2使用之環氧樹脂組成
物的組成均為60質量份之雙酚A型環氧樹脂,40質量份之
酚醛型環氧樹脂,28質量份之熔融矽石,8質量份之二氰二醯胺系硬化劑。
在SAW晶片之蓋部外周附近之與導體導通的位
置,藉網版印刷均等地配置6點焊料球(凸塊)。將多數配置有各凸塊之SAW晶片搭載在直徑5英吋、厚度650μm之矽晶圓上,接著進行加熱及冷卻而製得安裝構造體。
將製得之安裝構造體固定在模具中後,在溫度
175℃、壓力2MPa之條件下將模製材(環氧樹脂組成物)壓入相同模具中,進行轉移成形之密封。在SAW晶片之已知斷面位置切斷已密封之安裝構造體,接著藉電子顯微鏡(1000倍)觀察蓋部之位移量。
位移量之觀察係藉以下三階段評價是否可確保
SAW晶片內部之空間。
◎:蓋部無位移,或即使有位移亦小,可確保中空部。
○:雖然看到些許蓋部之位移,但可確保中空部。
×:蓋部之位移大,無法確保中空部。
此外,使用80質量份之雙酚A型環氧樹脂,20
質量份之酚醛型環氧樹脂,46質量份之酸酐,50質量份之熔融矽石,1質量份之硬化促進劑,作為模製材(環氧樹脂組成物)。
除了使用GFRP基板3(板片SP)及GFRP基板4(板片SP)之積層體,作為蓋部之材料(板片材料),且將積層體配置在肋材之端部,使GFRP基板3與肋材相接以外,與實施例1
同樣地製作安裝構造體,並進行評價。結果顯示於表1中。
此外,GFRP基板3及GFRP基板4含有之樹脂呈半硬化狀態。
GFRP基板3係藉玻璃纖維強化後之環氧樹脂片,
厚度為20μm,硬化後之拉伸彈性模數Es係18GPa,且所使用之環氧樹脂組成物硬化後的玻璃轉移溫度Tgs係188℃。
GFRP基板4係藉玻璃纖維強化後之環氧樹脂片,
厚度為25μm,硬化後之拉伸彈性模數Es係18GPa,且所使用之環氧樹脂組成物硬化後的玻璃轉移溫度Tgs係188℃。
GFRP基板3及GFRP基板4使用之環氧樹脂組成物的組成均與GFRP基板1(GFRP基板2)相同。
除了使用接著層(環氧樹脂組成物)及GFRP基板5(板片SP)之積層體,作為蓋部之材料(板片材料),且將積層體配置在肋材之端部,使接著層與肋材相接以外,與實施例1同樣地製作安裝構造體,並進行評價。結果顯示於表1中。
此外,GFRP基板5含有之樹脂呈半硬化狀態。
接著層之厚度係5μm,硬化後之拉伸彈性模數Ea
係200MPa,硬化後之室溫下之拉伸彈性模數Ea係8GPa,所使用之環氧樹脂組成物硬化後的玻璃轉移溫度Tga係131℃,且該Tga以下之溫度條件的25至60℃下硬化後之線膨脹係數CTEa係31ppm/℃。所使用之環氧樹脂組成之70℃下硬化前之儲存彈性模數Ga'係0.193MPa,且損失剪切
彈性模數Ga"與儲存彈性模數Ga'之比:Ga"/Ga'係0.9289。
此外,板片材料對肋材之接著在70℃下進行,且接著層之硬化在150℃下進行。
接著層之組成係100質量之雙酚A型環氧樹脂份,
68質量份之酚樹脂系硬化劑,173質量份之熔融矽石(粒徑D95:1μm以下,平均粒徑D50:0.3μm),5質量份之硬化促進劑。
GFRP基板5係藉玻璃纖維強化後之環氧樹脂片,
厚度為40μm,硬化後之拉伸彈性模數Es係18GPa,所使用之環氧樹脂組成物硬化後的玻璃轉移溫度Tgs係188℃,且上述Tga以下之溫度條件的25至60℃下硬化後之線膨脹係數CTEs係14ppm/℃。GFRP基板5使用之環氧樹脂組成物的組成與GFRP基板1(GFRP基板2)相同。
除了使用上述接著層及玻璃板(板片SP)積層而得之積層體,作為蓋部之材料(板片材料),且將積層體配置在肋材之端部,使接著層與肋材相接以外,與實施例3同樣地製作安裝構造體,並進行評價。結果顯示於表1中。
玻璃板之厚度係35μm,拉伸彈性模數Es係
73GPa,且接著層使用之環氧樹脂之硬化後Tg(131℃)以下的25至60℃下之線膨脹係數CTEs係3.8ppm/℃。
除了使用上述接著層及銅箔(板片SP)之積層體,作為蓋部之材料(板片材料),且將積層體配置在肋材之端部,
使接著層與肋材相接以外,與實施例3同樣地製作安裝構造體,並進行評價。結果顯示於表1中。銅箔之厚度係20μm,拉伸彈性模數Es係124GPa,且接著層使用之環氧樹脂組成物之硬化後Tg(131℃)以下的25至60℃下之線膨脹係數CTEs係16.8ppm/℃。
除了使用在玻璃板(板片SP)側進一步積層樹脂板而得之積層體,作為蓋部之材料(板片材料)以外,與實施例4同樣地製作安裝構造體。樹脂板係聚醯亞胺樹脂組成物,厚度為10μm,硬化後之玻璃轉移溫度Tg係200℃,且室溫下之拉伸彈性模數E係1.0GPa。
除了在壓力8MPa下進行模製材(環氧樹脂組成物)之壓入以外,與實施例4同樣地製作安裝構造體,並進行評價。
結果顯示於表1中。
除了使用聚醯亞胺片1(厚度25μm,硬化後之拉伸彈性模數Es:3.9GPa,硬化後之玻璃轉移溫度Tgs:270℃,半硬化狀態),及聚醯亞胺片2(厚度20μm,硬化後之拉伸彈性模數Es:3.9GPa,硬化後之玻璃轉移溫度Tgs:270℃)之積層體,作為蓋部之材料(板片材料),且將積層體配置在肋材之端部,使聚醯亞胺片1與肋材相接以外,與實施例1同樣地製作安裝構造體,並進行評價。結果顯示於表1中。
依據表1,可了解的是若蓋部包含在175℃下之拉
伸彈性模數Es係10GPa以上的板片S,則可確保電路構件內部之空間。
本發明在藉包含例如轉移成型法之工法製造搭載有內部具有空間之電路構件的安裝構造體密封時是有用的。
1‧‧‧元件
1a‧‧‧壓電體
1b‧‧‧交叉指形電極
2‧‧‧接著層
3‧‧‧肋材
4‧‧‧蓋部
5,5a,5b‧‧‧導體
6‧‧‧空間
10‧‧‧電路構件;第二電路構件
Cw‧‧‧蓋部厚度
FA‧‧‧功能區域
Rh‧‧‧肋材高度
Rw‧‧‧肋材寬度
Claims (20)
- 一種電路構件,具有:元件,其具有功能區域;蓋部,其呈平板狀且配置成面向前述功能區域;及肋材,其以包圍前述功能區域之方式形成,以於前述功能區域與前述蓋部之間形成空間;其中前述蓋部包含厚度為100μm以下之板片S,且前述板片S在175℃下之拉伸彈性模數Es係10GPa以上。
- 如請求項1之電路構件,其中前述板片S在175片下之拉伸彈性模數Es為20GPa以上。
- 如請求項1或2之電路構件,其於前述元件及/或前述蓋部與前述肋材之抵接面之至少一部份更具有接著層A。
- 如請求項3之電路構件,其中前述接著層A在175前下之拉伸彈性模數Ea係10MPa以上。
- 如請求項3或4之電路構件,其中前述接著層A之玻璃轉移溫度Tga係80a以上。
- 如請求項3至5中任一項之電路構件,其中前述接著層A含有硬化狀態之熱硬化性樹脂。
- 如請求項3至6中任一項之電路構件,其於前述蓋部與前述肋材之抵接面之至少一部份具有接著層A;又在前述接著層A之前述玻璃轉移溫度Tga以下之溫度條件下, 前述接著層A之線膨脹係數CTEa係60ppm/℃以下,且前述接著層A之前述線膨脹係數CTEa與前述板片S之線膨脹係數CTEs的差為50ppm/℃以下。
- 如請求項1至7中任一項之電路構件,其中前述板片S之材料選自於由陶瓷、矽、玻璃、玻璃纖維強化樹脂及金屬所構成群組中之至少1種。
- 如請求項8之電路構件,其中前述板片S之材料係前述玻璃。
- 如請求項8之電路構件,其中前述板片S之材料係前述玻璃纖維強化樹脂。
- 如請求項1至10中任一項之電路構件,其更包含用以密封前述電路構件之樹脂密封材。
- 一種板片材料,係用以形成如請求項1之蓋部。
- 如請求項12之板片材料,其更包含接著層AP。
- 如請求項13之板片材料,其中前述接著層AP含有未硬化或半硬化狀態之熱硬化性樹脂。
- 如請求項14之板片材料,其在常溫以上且前述接著層AP之硬化溫度以下的溫度條件下,前述接著層AP之儲存剪切彈性模數Ga'係0.05至10MPa,且前述接著層AP之損失剪切彈性模數Ga"與前述儲存剪切彈性模數Ga'之比:Ga"/Ga'係0.1至2.0。
- 一種安裝構造體,具有第一電路構件,及安裝在前述第 一電路構件上之第二電路構件;其中前述第二電路構件具有:元件,其具有功能區域;蓋部,其呈平板狀且配置成面向前述功能區域;及肋材,其以包圍前述功能區域之方式形成,以於前述功能區域與前述蓋部之間形成空間;其中前述蓋部包含厚度為100μm以下之板片S,且前述板片S在175℃下之拉伸彈性模數Es為10GPa以上。
- 如請求項16之安裝構造體,其具有用以密封前述第二電路構件之樹脂密封材。
- 一種安裝構造體之製造方法,具有以下步驟:(i)準備第一電路構件及第二電路構件;及(ii)將前述第二電路構件安裝在前述第一電路構件上;其中前述第二電路構件具有:元件,其具有功能區域;蓋部,其呈平板狀且配置成面向前述功能區域;及肋材,其以包圍前述功能區域之方式形成,以於前述功能區域與前述蓋部之間形成空間;其中前述蓋部包含厚度為100μm以下之板片S,且前述板片S在175℃下之拉伸彈性模數Es為10GPa以上。
- 如請求項18之安裝構造體之製造方法,其中前述步驟(i) 中所準備之前述第二電路構件包含用以密封前述第二電路構件之樹脂密封材。
- 如請求項18或19之安裝構造體之製造方法,其更具有步驟(iii),係利用樹脂密封材密封經安裝在前述第一電路構件上之前述第二電路構件。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014073326 | 2014-03-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201601260A true TW201601260A (zh) | 2016-01-01 |
Family
ID=54239859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104110627A TW201601260A (zh) | 2014-03-31 | 2015-03-31 | 具有中空部之電路構件及安裝構造體、以及安裝構造體之製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20170117874A1 (zh) |
EP (1) | EP3128545A4 (zh) |
JP (1) | JPWO2015151514A1 (zh) |
KR (1) | KR20160140744A (zh) |
CN (1) | CN106170854A (zh) |
CR (1) | CR20160441A (zh) |
TW (1) | TW201601260A (zh) |
WO (1) | WO2015151514A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI757551B (zh) * | 2017-09-29 | 2022-03-11 | 日商長瀨化成股份有限公司 | 安裝結構體之製造方法及使用於其之片材 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104576964A (zh) * | 2014-12-17 | 2015-04-29 | 深圳市华星光电技术有限公司 | 透明柔性封装衬底及柔性oled封装方法 |
WO2016158050A1 (ja) * | 2015-03-27 | 2016-10-06 | 株式会社村田製作所 | 弾性波装置、通信モジュール機器及び弾性波装置の製造方法 |
WO2019088128A1 (ja) * | 2017-10-31 | 2019-05-09 | ナガセケムテックス株式会社 | 実装構造体の製造方法およびこれに用いられるシート |
CN110229488A (zh) * | 2018-03-05 | 2019-09-13 | 科思创德国股份有限公司 | 热塑性复合材料制件及其制备方法和用途 |
US10497566B1 (en) * | 2018-06-19 | 2019-12-03 | Macronix International Co., Ltd. | Layout design for fanout patterns in self-aligned double patterning process |
CN112997402A (zh) | 2018-08-30 | 2021-06-18 | 天工方案公司 | 封装的表面声波装置 |
CN112655285B (zh) * | 2018-10-05 | 2022-04-01 | 株式会社东芝 | 半导体封装 |
TW202033361A (zh) * | 2018-12-18 | 2020-09-16 | 日商日立化成股份有限公司 | 積層板、印刷線路板、半導體封裝體及積層板的製造方法 |
JP7243186B2 (ja) * | 2018-12-27 | 2023-03-22 | 住友ベークライト株式会社 | 封止用樹脂組成物、中空パッケージおよびその製造方法 |
CN116348563A (zh) * | 2020-09-28 | 2023-06-27 | 株式会社力森诺科 | 电路连接用黏合剂薄膜、含无机填料组合物、以及电路连接结构体及其制造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6861757B2 (en) * | 2001-09-03 | 2005-03-01 | Nec Corporation | Interconnecting substrate for carrying semiconductor device, method of producing thereof and package of semiconductor device |
JP2005210045A (ja) * | 2003-12-24 | 2005-08-04 | Kyocera Corp | 光半導体装置 |
JP4131330B2 (ja) * | 2004-07-27 | 2008-08-13 | 松下電工株式会社 | 光半導体装置 |
JP2006237405A (ja) * | 2005-02-25 | 2006-09-07 | Toshiba Corp | 電子部品装置 |
JP4986545B2 (ja) * | 2006-08-31 | 2012-07-25 | 京セラクリスタルデバイス株式会社 | 水晶振動子 |
JP5214627B2 (ja) * | 2007-10-30 | 2013-06-19 | 京セラ株式会社 | 弾性波装置 |
JP2009226571A (ja) * | 2008-02-28 | 2009-10-08 | Nippon Kayaku Co Ltd | マイクロデバイス及びその製造方法 |
JP2010199474A (ja) * | 2009-02-27 | 2010-09-09 | Kyocera Chemical Corp | 電子部品用中空パッケージ、電子部品用中空パッケージの接着シート、および蓋体、ならびに電子部品の製造方法 |
JP5444833B2 (ja) * | 2009-05-18 | 2014-03-19 | 日立化成株式会社 | 感光性樹脂組成物、リブパターンの形成方法及び電子部品 |
JP5425005B2 (ja) * | 2009-08-19 | 2014-02-26 | 日本電波工業株式会社 | 圧電部品及びその製造方法 |
US9005853B2 (en) * | 2010-05-20 | 2015-04-14 | Hitachi Chemical Company, Ltd. | Photosensitive resin composition, photosensitive film, rib pattern formation method, hollow structure and formation method for same, and electronic component |
JP2012084954A (ja) * | 2010-10-07 | 2012-04-26 | Panasonic Corp | 弾性波素子とこれを用いた電子機器 |
CN103460600B (zh) * | 2011-04-19 | 2016-01-13 | 京瓷株式会社 | 电子部件和弹性波装置 |
JP5660985B2 (ja) * | 2011-07-13 | 2015-01-28 | 日東電工株式会社 | 貼着型制振材 |
KR20140063712A (ko) * | 2011-09-22 | 2014-05-27 | 히타치가세이가부시끼가이샤 | 적층체, 적층판, 다층 적층판, 프린트 배선판 및 적층판의 제조 방법 |
CN105471406B (zh) * | 2012-02-28 | 2018-04-06 | 天工滤波方案日本有限公司 | 弹性波装置及其制造方法 |
JP2013178526A (ja) | 2013-04-01 | 2013-09-09 | Hitachi Chemical Co Ltd | 中空構造体及びその製造方法 |
US10224260B2 (en) * | 2013-11-26 | 2019-03-05 | Infineon Technologies Ag | Semiconductor package with air gap |
-
2015
- 2015-03-31 CN CN201580017971.XA patent/CN106170854A/zh active Pending
- 2015-03-31 TW TW104110627A patent/TW201601260A/zh unknown
- 2015-03-31 KR KR1020167028912A patent/KR20160140744A/ko unknown
- 2015-03-31 WO PCT/JP2015/001860 patent/WO2015151514A1/ja active Application Filing
- 2015-03-31 US US15/300,587 patent/US20170117874A1/en not_active Abandoned
- 2015-03-31 CR CR20160441A patent/CR20160441A/es unknown
- 2015-03-31 JP JP2016511390A patent/JPWO2015151514A1/ja active Pending
- 2015-03-31 EP EP15773495.5A patent/EP3128545A4/en not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI757551B (zh) * | 2017-09-29 | 2022-03-11 | 日商長瀨化成股份有限公司 | 安裝結構體之製造方法及使用於其之片材 |
US11848659B2 (en) | 2017-09-29 | 2023-12-19 | Nagase Chemtex Corporation | Manufacturing method of mounting structure, and sheet therefor |
Also Published As
Publication number | Publication date |
---|---|
US20170117874A1 (en) | 2017-04-27 |
JPWO2015151514A1 (ja) | 2017-04-13 |
EP3128545A1 (en) | 2017-02-08 |
CR20160441A (es) | 2016-12-01 |
CN106170854A (zh) | 2016-11-30 |
KR20160140744A (ko) | 2016-12-07 |
EP3128545A4 (en) | 2018-02-28 |
WO2015151514A1 (ja) | 2015-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW201601260A (zh) | 具有中空部之電路構件及安裝構造體、以及安裝構造體之製造方法 | |
KR101995141B1 (ko) | 배선 기판, 반도체 장치 및 반도체 장치의 제조 방법 | |
JP5042297B2 (ja) | 半導体装置の製造方法 | |
JP4093186B2 (ja) | 半導体装置の製造方法 | |
US20140225271A1 (en) | Panelized packaging with transferred dielectric | |
US9936583B2 (en) | Wiring board and mounting structure using the same | |
KR20140140042A (ko) | 반도체 장치의 제조 방법 및 반도체 장치의 제조 장치 | |
US9374889B2 (en) | Interposer and electronic component package | |
CN111466021B (zh) | 安装结构体的制造方法 | |
WO2012133839A1 (ja) | 機能素子内蔵基板、これを備えた電子機器及び機能素子内蔵基板の製造方法 | |
US20140120291A1 (en) | Laminated base material, substrate using laminated base material, and method of manufacturing substrate | |
JP6459019B2 (ja) | 封止用積層シートおよびその製造方法ならびに封止用積層シートを用いて封止された実装構造体およびその製造方法 | |
JP2009272512A (ja) | 半導体装置の製造方法 | |
JP2013004823A (ja) | 半導体装置の製造方法 | |
TW201923916A (zh) | 安裝結構體之製造方法及使用於其之片材 | |
TW201921603A (zh) | 安裝結構體之製造方法及使用於其之片材 | |
JP2016048768A (ja) | 配線板及び半導体装置の製造方法 | |
JP5081267B2 (ja) | 回路部品内蔵モジュールおよび回路部品内蔵モジュールの製造方法 | |
JP6355013B2 (ja) | 中空部を有する実装構造体およびその製造方法 | |
JP5256681B2 (ja) | 半導体装置、半導体装置用プリント配線板及び銅張積層板 | |
JP5897956B2 (ja) | 部品内蔵基板および実装構造体 | |
JP2018009065A (ja) | エポキシ樹脂組成物、プリプレグ、金属張積層板及びプリント配線板 | |
JP5292848B2 (ja) | 部品内蔵基板及びその製造方法 | |
JP2016111275A (ja) | 配線基板及びラミネート装置 | |
JP5105030B2 (ja) | 基板、半導体装置および基板の製造方法 |