TW201533848A - 封裝體與其雷射標記方法 - Google Patents

封裝體與其雷射標記方法 Download PDF

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Publication number
TW201533848A
TW201533848A TW103145546A TW103145546A TW201533848A TW 201533848 A TW201533848 A TW 201533848A TW 103145546 A TW103145546 A TW 103145546A TW 103145546 A TW103145546 A TW 103145546A TW 201533848 A TW201533848 A TW 201533848A
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Taiwan
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package
dielectric layer
metal pad
group
redistribution lines
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TW103145546A
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English (en)
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TWI533406B (zh
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Hsien-Wei Chen
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Taiwan Semiconductor Mfg Co Ltd
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Abstract

一種封裝體包含裝置晶粒、於裝置晶粒下之第一群重分佈線、於裝置晶粒上之第二群重分佈線、以及與第二群重分佈線位於相同金屬層之金屬墊。一雷射標誌於一介電層中，且於金屬墊上。雷射標誌與金屬墊重疊。

Description

封裝體之雷射標誌
本發明是有關於一種封裝體。
在積體電路之封裝體中具有多種封裝方法與結構。舉例而言，在一傳統疊層封裝體(Package-on-Package,PoP)製程中，一上封裝體被接合至一下封裝體。上封裝體與下封裝體可皆具有被封裝於其內的裝置晶粒。採取疊層封裝體製程，封裝體之積集度可增加。
在一現有之疊層封裝體製程中，下封裝體首先被形成，其包含被接合至一封裝基板的一裝置晶粒。一模塑料被模製於封裝基板上，其中裝置晶粒被模製於模塑料中。封裝基板更包含形成於其上的焊球，其中焊球與裝置晶粒位於封裝基板的同一側。焊球用於將上封裝體連接至下封裝體。
根據本揭露的一些實施方式，一種封裝體包含一裝置晶粒、於裝置晶粒下之第一群重分佈線、於裝置晶粒上之第二群重分佈線、以及與第二群重分佈線位於相同金屬 層之金屬墊。一雷射標誌於一介電層中，且置於金屬墊上。雷射標誌與金屬墊重疊。
根據本揭露的可替代之實施方式，一第一封裝體包含至少一第一介電層、於至少一第一介電層中之一第一群重分佈線、於第一群重分佈線上且與第一群重分佈線電性耦合的一裝置晶粒、將裝置晶粒模製於內之一模材、穿透模材之一貫穿結構、於裝置晶粒上之至少一第二介電層、以及於至少一第二介電層中之一第二群重分佈線。第二群重分佈線藉由貫穿結構而電性耦合至第一群重分佈線。第一封裝體更包含於至少一第二介電層中的金屬層、於至少一第二介電層上的第三介電層、以及自第三介電層之一上表面延伸至金屬層之一上表面的一雷射標誌。第二封裝體於第一封裝體上方，其中第二封裝體接合至第一封裝體。
根據本揭露的其他可替代之實施方式，一種方法包含執行一雷射標記於一封裝體上。封裝體包含至少一第一介電層、於至少一第一介電層中之第一群重分佈線、於第一群重分佈線上方且電性耦合第一群重分佈線之裝置晶粒、將裝置晶粒模製於內之模材、穿透模材之貫穿結構、於裝置晶粒上方之至少一第二介電層、於至少一第二介電層中之第二群重分佈線，其中第二群重分佈線藉由貫穿結構電性耦合至第一群重分佈線、於至少一第二介電層中之金屬墊。封裝體更包含於至少一第二介電層上之第三介電層。雷射標記形成一雷射標誌於第三介電層中，且部分之金屬墊暴露於雷射標誌。
上述之實施方式中，雷射標誌可用作辨認產品、製程程序、或任何其他被用作追蹤該封裝體的資訊。藉由形成金屬墊，可保護封裝體之裝置晶粒與重分佈線免於由雷射標記所造成的破壞。因金屬墊可與封裝體之重分佈線於同一時間形成，本揭露之實施方式不產生額外的製造成本。
100、200‧‧‧封裝體
102、204‧‧‧裝置晶粒
110‧‧‧晶粒接觸膜
104‧‧‧積體電路裝置
106‧‧‧金屬柱/墊
108‧‧‧半導體基板
108A‧‧‧背表面
112、116‧‧‧重分佈線
114、118、118’‧‧‧介電層
120‧‧‧模材
120A‧‧‧下表面
120B‧‧‧上表面
122‧‧‧貫穿結構
124‧‧‧電性連接器、金屬墊
126‧‧‧焊接區
128、116’‧‧‧金屬墊
130‧‧‧密封環
132、132’‧‧‧雷射標誌
134‧‧‧雷射光束
136‧‧‧開口
138‧‧‧焊球
140‧‧‧底部填材
202‧‧‧封裝基板
L1‧‧‧長度
W1、W2‧‧‧寬度
從以下結合所附圖式所做的詳細描述，可對本揭露之態樣有更佳的了解。需注意的是，根據業界實務的標準做法，各種特徵不是按比例繪製。實際上，為了清楚討論起見，各種特徵的尺寸可任意放大或縮小。
第1圖至第5圖繪示根據一些實施方式之封裝體於形成時中間階段的剖面圖。
第6圖繪示根據一些實施方式之封裝體的上視圖，其中一雷射標誌與一對應之金屬墊形成以與封裝體中之一裝置晶粒重疊。
第7圖繪示根據一些實施方式之封裝體的上視圖，其中一雷射標誌與一對應之金屬墊與封裝體之裝置晶粒錯位。
以下的揭露提供了許多不同實施方式或範例，以實施所提供之標的之不同特徵。以下所描述之構件與安排的特定範例係用以簡化本揭露。當然這些僅為範例，並非用以做為限制。舉例而言，於描述中，第一特徵形成於第二特 徵上方或上，可能包含第一特徵與第二特徵以直接接觸的方式形成的實施方式，亦可能包含額外特徵可能形成在第一特徵與第二特徵之間的實施方式，如此第一特徵與第二特徵可能不會直接接觸。此外，本揭露可能會在各範例中重複參考數字及/或文字。這樣的重複係基於簡化與清楚之目的，以其本身而言並非用以指定所討論之各實施方式及/或配置之間的關係。
另外，在此說明中可能會使用空間相對用語，例如「下方(underlying)」、「下方(below)」、「較低(lower)」、「上方(overlying)」、「較高(upper)」等等，以方便說明如圖式所繪示之一元件或一特徵與另一(另一些)元件或特徵之關係。除了在圖中所繪示之方向外，這些空間相對用詞意欲含括元件在使用或操作中的不同方位。設備可能以不同方式定位(旋轉90度或在其他方位上)，因此可利用同樣的方式來解釋在此所使用之空間相對描述符號。
根據多種示例性之實施方式，一種封裝體與於封裝體中形成雷射標誌的方法被提供。多種實施方式被討論。所有之多種觀點與說明性實施方式中，相似的參考數字被用以標示相似之元件。
第1圖繪示封裝體100之剖面圖。在一些實施方式中，封裝體100包含裝置晶粒102，且裝置晶粒102之前側面向下方且接合至重分佈線(Redistribution Lines,RDLs)112。在可替代的實施方式中，封裝體100包含多於一個裝置晶粒。裝置晶粒102可包含半導體基板108，與積 體電路裝置104(例如主動裝置，其例如包含電晶體)於半導體基板108之前表面(面向下方之表面)。裝置晶粒102可包含一邏輯晶粒例如為一中央處理單元(Central Processing Unit,CPU)晶粒、一圖形處理單元(Graphic Processing Unit,GPU)晶粒、一行動應用(Mobile Application)晶粒等。
裝置晶粒102被模製於模材120中，其環繞裝置晶粒102。模材120可為一模塑料、一模製填充底材、一樹脂等。模材120之下表面120A可與裝置晶粒102之底端同水平。模材120之上表面120B可與半導體基板108之背表面108A同水平或高於半導體基板108之背表面108A。在一些實施方式中，半導體基板108之背表面108A與晶粒接觸膜110重疊，其為一種將裝置晶粒102貼合至重疊之介電層118的介電膜。裝置晶粒102更包含接觸且接合至重分佈線112的金屬柱/墊106(其可例如包含銅柱)。
封裝體100可包含於裝置晶粒102下的底側的重分佈線112與於裝置晶粒102上的頂側的重分佈線116。底側的重分佈線112形成於介電層114中，頂側的重分佈線116形成於介電層118中。重分佈線112與116可由銅、鋁、鎳、鈦、其合金或其疊層所形成。在一些實施方式中，介電層114與118由有機材，例如為聚合物，其可更包含聚苯噁唑(polybenzoxazole,PBO)、苯并環丁烯(benzocyclobutene,BCB)、聚亞醯胺(polyimide)等所形成。在可替代的實施方式中，介電層114與118由無機材， 例如氧化矽、氮化矽、氮氧化矽等所形成。
貫穿結構122被形成以穿透模材120。在一些實施方式中，貫穿結構122具有與模材120之上表面120B同水平之上表面，以及與模材120之下表面120A同水平之下表面。貫穿結構122將底側的重分佈線112電性連接至頂側的重分佈線116。貫穿結構122亦可與底側的重分佈線112以及頂側的重分佈線116物理性接觸。
電性連接器124，其可由非焊接金屬材料所形成，形成於封裝體100的下表面。在一些實施方式中，電性連接器124包含球下冶金屬(Under-Bump Metallurgies)或金屬墊。在可替代的實施方式中，電性連接器124包含金屬柱，例如為銅柱。在本文中，電性連接器124被稱為金屬墊124，雖然它們可具有其他形式。根據一些實施方式，金屬墊124包含銅、鋁、鈦、鎳、鈀、金或其之複數層。在一些實施方式中，如第1圖所繪示，金屬墊124之下表面與下介電層114之下表面同水平。在可替代的實施方式中，金屬墊124之下表面延伸至下介電層114之下表面下方。在一些實施方式中，焊接區126接觸金屬墊124之下表面。
金屬墊128形成於形成重分佈線116之一之金屬層中。在一些實施方式中，金屬墊128係電性浮動。在可替代的實施方式中，金屬墊128係電性連接至其他導電特徵，例如重分佈線116與/或貫穿結構122。舉例而言，金屬墊128可連接至電性接地。當於同一金屬層之對應重分佈線116被形成時，金屬墊128同時被形成。
在一些示例性的實施方式中，密封環130被形成以環繞金屬墊128，其中示例性之密封環130可於第6圖與第7圖中發現。如第1圖所示，密封環130與金屬墊128係由同一金屬層形成。在一些實施方式中，密封環130係電性浮動，且可被介電材完整包覆。在可替代的實施方式中，密封環130係電性耦合至其他導電特徵，例如重分佈線116與/或貫穿結構122。當金屬墊128形成時，密封環130同時被形成。在可替代的實施方式中，不形成密封環去環繞金屬墊128。
根據一些實施方式，金屬墊128與密封環130之下表面高於晶粒接觸膜110的上表面與模材120的上表面120B。其中一層的介電層118被形成於金屬墊128與密封環130底下，且該介電層118之上表面接觸金屬墊128與密封環130之下表面。在金屬墊128與密封環130上存在一附加層，其為該介電層118，並被標示為118’。
請參照第2圖。一雷射標記被執行以於介電層118’中形成雷射標誌132，其中雷射標誌132包含形成於介電層118’中之溝槽。利用雷射光束134執行雷射標記，其燒蝕並移除部分之介電層118’。被燒蝕之部分介電層118’與金屬墊128重疊。金屬墊128作為一保護層，其中雷射光束134無法穿透金屬墊128。因此，金屬墊128具有防止雷射光束134到達下方之(若有的話)裝置晶粒102與下方之重分佈線116的功能。在雷射標記後，一些部分之金屬墊128透過形成雷射標誌132之溝槽而被暴露。雷射標誌132可包含 字母、數字、圖片或任何其他可當作認證用途之符號。舉例而言，第6圖與第7圖繪示一些示例性的雷射標誌134，其包含字母與數字。雷射標誌132可用作辨認產品、製程程序、或任何其他被用作追蹤該封裝體100的資訊。
第3圖繪示移除一些部分之介電層118以暴露出金屬墊116’，其可為部分之重分佈線116。如此一來，開口136被形成於介電層118’中。開口136的形成可利用雷射燒蝕來達成。或者，當介電層118’係為光敏材料，例如聚苯噁唑或聚亞醯胺，所形成時，開口136的形成可利用曝光接著顯影法來達成。
第4圖繪示焊球138的形成。在一些實施方式中，執行一置球步驟以將焊球放入開口136(第3圖)中，接著再以回焊製程以回焊焊球。在可替代的實施方式中，開口136中沒有焊球。反而，焊錫位於如第5圖之封裝體200中。
第5圖繪示封裝體200與封裝體100之接合。在一些實施方式中，封裝體200包含封裝基板202與接合至封裝基板202之裝置晶粒204。裝置晶粒204與封裝基板202之結合可藉由引線接合、覆晶接合或諸如此法以達成。如第4圖所示之焊球138被回焊以將封裝體200接合至封裝體100。在一些實施方式中，在接合封裝體200後，底部填材140被填充於封裝體100與封裝體200之間的間隙。在這些實施方式中，雷射標誌132(第4圖)之溝槽也被底部填材140所填滿。因此，於雷射標誌132之溝槽的部分底部填材140被稱為雷射標誌132’。雷射標誌132’可自介電層118’之上 表面延伸至金屬墊128之上表面。更進一步的，雷射標誌132’可物理性接觸金屬墊128之上表面。
如第5圖所示之封裝體中，金屬墊128可被包含介電層118與底部填材140之介電材料所完整包圍與接觸。在可替代的實施方式中，封裝體100與封裝體200之間的間隙不被底部填材所填充，而雷射標誌132保持為空氣間隙。在這些實施方式中，部分之金屬墊128可藉由雷射標誌132而被暴露至空氣。
第6圖繪示根據一些實施方式之封裝體100的上視圖。如第6圖所示，雷射標誌132被形成以與金屬墊128重疊，其中所有之雷射標誌132都形成於金屬墊128或者其他金屬墊上。密封環130形成在一些實施方式中，且形成一環以環繞金屬墊128。在一些示例性的實施方式中，金屬墊128之長度L1與寬度W1大於大約2公分，以容許足夠的空間以形成雷射標誌132。形成密封環130以避免雷射標記時產生的熱傳播至其他區域。
在雷射標記時，熱被產生，且可能會破壞包含重分佈線與介電層之結構。為了減少或至少消除由熱產生的損壞，密封環130可具有較大的寬度W2，舉例而言，大於大約20微米以提供低熱阻，使得密封環130過熱的部分可快速散熱至密封環130的其他部分。在可替代的實施方式中，沒有密封環130被形成。
在如第6圖的實施方式中，貫穿結構122可形成於靠近封裝體100的邊緣處，雖然貫穿結構122亦可形成於 封裝體100的其他地方。在一些實施方式中，貫穿結構122可與環繞金屬墊128之環相對齊。
在第6圖中，金屬墊128與雷射標誌132被直接形成且重疊於晶粒102上。在可替代的實施方式中，如第7圖所示，其亦繪示封裝體100的上視圖，金屬墊128與雷射標誌132不對齊於裝置晶粒102。當沒有足夠空間以放置金屬墊128時可使用此實施方式。
本揭露之實施方式具有一些有利的特徵。藉由形成金屬墊，可保護封裝體之裝置晶粒與重分佈線免於由雷射標記所造成的破壞。因金屬墊可與封裝體之重分佈線於同一時間形成，本揭露之實施方式不產生額外的製造成本。
根據本揭露的一些實施方式，一種封裝體包含一裝置晶粒、於裝置晶粒下之第一群重分佈線、於裝置晶粒上之第二群重分佈線、以及與第二群重分佈線位於相同金屬層之金屬墊。一雷射標誌於一介電層中，且置於金屬墊上。雷射標誌與金屬墊重疊。
根據本揭露的可替代之實施方式，一第一封裝體包含至少一第一介電層、於至少一第一介電層中之一第一群重分佈線、於第一群重分佈線上且與第一群重分佈線電性耦合的一裝置晶粒、將裝置晶粒模製於內之一模材、穿透模材之一貫穿結構、於裝置晶粒上之至少一第二介電層、以及於至少一第二介電層中之一第二群重分佈線。第二群重分佈線藉由貫穿結構而電性耦合至第一群重分佈線。第一封裝體更包含於至少一第二介電層中的金屬層、於至少一第二介電 層上的第三介電層、以及自第三介電層之一上表面延伸至金屬層之一上表面的一雷射標誌。第二封裝體於第一封裝體上方，其中第二封裝體接合至第一封裝體。
根據本揭露的其他可替代之實施方式，一種方法包含執行一雷射標記於一封裝體上。封裝體包含至少一第一介電層、於至少一第一介電層中之第一群重分佈線、於第一群重分佈線上方且電性耦合第一群重分佈線之裝置晶粒、將裝置晶粒模製於內之模材、穿透模材之貫穿結構、於裝置晶粒上方之至少一第二介電層、於至少一第二介電層中之第二群重分佈線，其中第二群重分佈線藉由貫穿結構電性耦合至第一群重分佈線、於至少一第二介電層中之金屬墊。封裝體更包含於至少一第二介電層上之第三介電層。雷射標記形成一雷射標誌於第三介電層中，且部分之金屬墊暴露於雷射標誌。
上述已概述數個實施方式的特徵，因此熟習此技藝者可更了解本揭露之態樣。熟悉此技藝者應了解到，其可輕易地利用本揭露做為基礎，來設計或潤飾其他製程與結構，以實現與在此所介紹之實施方式相同之目的及/或達到相同的優點。熟悉此技藝者也應了解到，這類對等架構並未脫離本揭露之精神和範圍，且熟悉此技藝者可在不脫離本揭露之精神和範圍下，進行各種之更動、取代與潤飾。
100‧‧‧封裝體
102‧‧‧裝置晶粒
108A‧‧‧背表面
112、116‧‧‧重分佈線
114、118、118’‧‧‧介電層
120‧‧‧模材
120A‧‧‧下表面
122‧‧‧貫穿結構
124‧‧‧電性連接器、金屬墊
126‧‧‧焊接區
116’、128‧‧‧金屬墊
130‧‧‧密封環
132‧‧‧雷射標誌
138‧‧‧焊球

Claims (20)

  1. 一種封裝體，包含：一第一封裝體，包含：一裝置晶粒；一第一群重分佈線，於該裝置晶粒下；一第二群重分佈線，於該裝置晶粒上；一金屬墊，與該第二群重分佈線位於同一金屬層；以及一雷射標誌，於一介電層中，其中該介電層置於該金屬墊上，且其中該雷射標誌與該金屬墊重疊。
  2. 如請求項1所述之封裝體，其中該雷射標誌包含一字母、一數字、或一字母與一數字的一組合。
  3. 如請求項1所述之封裝體，其中該雷射標誌包含形成於該介電層中之複數個溝槽，且其中該封裝體更包含：一第二封裝體，於該第一封裝體上方；一焊接區，將該第一封裝體接合至該第二封裝體；以及一底部填材，於該第一封裝體與該第二封裝體之間的一間隙中，其中置於該介電層之該些溝槽之一部分之該底部填材形成該雷射標誌。
  4. 如請求項1所述之封裝體，其中該雷射標 誌自該介電層之一上表面延伸至該金屬墊之一上表面，且該雷射標誌物理性接觸該金屬墊。
  5. 如請求項1所述之封裝體，其中該介電層包含一聚合物。
  6. 如請求項1所述之封裝體，其中該金屬墊與該雷射標誌皆重疊該裝置晶粒。
  7. 如請求項1所述之封裝體，其中該第一封裝體更包含：一模材，將該裝置晶粒模製於其內；以及一貫穿結構，穿透該模材，其中該貫穿結構電性連接一之該第一群重分佈線至一之該第二群重分佈線。
  8. 一種封裝體，包含：一第一封裝體，包含：至少一第一介電層；一第一群重分佈線，於該至少一第一介電層中；一裝置晶粒，於該第一群重分佈線上方且電性耦合該第一群重分佈線；一模材，將該裝置晶粒模製於其內；一貫穿結構，穿透該模材；至少一第二介電層，於該裝置晶粒上方；一第二群重分佈線，於該至少一第二介電層中， 其中該第二群重分佈線藉由該貫穿結構電性耦合至該第一群重分佈線；一金屬墊，於該至少一第二介電層中；一第三介電層，於該至少一第二介電層上；以及一雷射標誌，自該第三介電層之一上表面延伸至該金屬墊之一上表面；以及一第二封裝體，於該第一封裝體上方，其中該第二封裝體接合至該第一封裝體。
  9. 如請求項8所述之封裝體，更包含：一底部填材，於該第一封裝體與該第二封裝體之間的一間隙中，其中該雷射標誌包含一部分之該底部填材。
  10. 如請求項9所述之封裝體，其中該底部填材物理性接觸該金屬墊之該上表面。
  11. 如請求項8所述之封裝體，其中該金屬墊係電性浮動，且其中該金屬墊係被介電材完整包覆。
  12. 如請求項8所述之封裝體，更包含一晶粒接觸膜，於該裝置晶粒上，其中該晶粒接觸膜包含與該模材之一上表面同水平之一上表面。
  13. 如請求項12所述之封裝體，其中該金屬墊與該晶粒接觸膜重疊，且其中該金屬墊藉由一之該至少 一第二介電層而與該晶粒接觸膜隔離。
  14. 如請求項8所述之封裝體，更包含一密封環環繞該金屬墊，其中該密封環與該金屬墊位於同一金屬層，且其中該密封環係電性浮動。
  15. 一種方法，包含：執行一雷射標記於一第一封裝體上，其中該第一封裝體包含：至少一第一介電層；一第一群重分佈線，於該至少一第一介電層中；一裝置晶粒，於該第一群重分佈線上方且電性耦合該第一群重分佈線；一模材，將該裝置晶粒模製於其內；一貫穿結構，穿透該模材；至少一第二介電層，於該裝置晶粒上方；一第二群重分佈線，於該至少一第二介電層中，其中該第二群重分佈線藉由該貫穿結構電性耦合至該第一群重分佈線；一金屬墊，於該至少一第二介電層中；以及一第三介電層，於該至少一第二介電層上，其中該雷射標記形成一雷射標誌於該第三介電層中，且部分之該金屬墊暴露於該雷射標誌。
  16. 如請求項15所述之方法，更包含： 形成複數個開口於該第三介電層中，以暴露出複數個金屬墊；放置複數個焊球於該第三介電層中之該些開口中；以及執行一回焊於該些焊球上，以連接該些焊球與該些金屬墊。
  17. 如請求項15所述之方法，更包含：接合一第二封裝體至該第一封裝體；以及填充一底部填材於該第一封裝體與該第二封裝體之間之一間隙，其中該底部填材置於該雷射標誌中。
  18. 如請求項17所述之方法，其中該底部填材係物理性接觸該金屬墊。
  19. 如請求項15所述之方法，其中該金屬墊阻擋用於該雷射標記之一雷射光束。
  20. 如請求項15所述之方法，其中該金屬墊係被一密封環環繞，且該金屬墊與該密封環同時被形成。
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