TW201510001A - 發光二極體之封裝材料 - Google Patents

發光二極體之封裝材料 Download PDF

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Publication number
TW201510001A
TW201510001A TW103124717A TW103124717A TW201510001A TW 201510001 A TW201510001 A TW 201510001A TW 103124717 A TW103124717 A TW 103124717A TW 103124717 A TW103124717 A TW 103124717A TW 201510001 A TW201510001 A TW 201510001A
Authority
TW
Taiwan
Prior art keywords
organopolyazane
encapsulating material
led
alkyl
group
Prior art date
Application number
TW103124717A
Other languages
English (en)
Chinese (zh)
Inventor
拉爾夫 葛洛坦慕勒
羅莎琳 卡路那南丹
北文雄
赫姆特 蘭玆
迪特 瓦格納
Original Assignee
Ａｚ電子材料德國股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ａｚ電子材料德國股份有限公司 filed Critical Ａｚ電子材料德國股份有限公司
Publication of TW201510001A publication Critical patent/TW201510001A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H10W74/476—Organic materials comprising silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J3/00—Processes of treating or compounding macromolecular substances
    • C08J3/24—Crosslinking, e.g. vulcanising, of macromolecules
    • C08J3/241—Preventing premature crosslinking by physical separation of components, e.g. encapsulation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J3/00—Processes of treating or compounding macromolecular substances
    • C08J3/24—Crosslinking, e.g. vulcanising, of macromolecules
    • C08J3/247—Heating methods
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/16—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/62—Nitrogen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2383/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
    • C08J2383/16—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Analytical Chemistry (AREA)
  • Silicon Polymers (AREA)
  • Led Device Packages (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
TW103124717A 2013-07-19 2014-07-18 發光二極體之封裝材料 TW201510001A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13177289 2013-07-19
EP14157208 2014-02-28

Publications (1)

Publication Number Publication Date
TW201510001A true TW201510001A (zh) 2015-03-16

Family

ID=51205398

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103124717A TW201510001A (zh) 2013-07-19 2014-07-18 發光二極體之封裝材料

Country Status (8)

Country Link
US (1) US9991182B2 (enExample)
EP (1) EP3022249A1 (enExample)
JP (1) JP2016529354A (enExample)
KR (1) KR20160035581A (enExample)
CN (1) CN105392825A (enExample)
SG (2) SG10201800517XA (enExample)
TW (1) TW201510001A (enExample)
WO (1) WO2015007778A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI737610B (zh) * 2015-05-20 2021-09-01 美商納諾光子公司 用於改進發光二極體之效率的程序

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WO2017182390A1 (de) 2016-04-18 2017-10-26 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines optoelektronischen bauelements und optoelektronisches bauelement
EP3485520B1 (en) 2016-07-18 2022-01-26 Merck Patent GmbH Formulation for an led encapsulation material
EP3484950B1 (en) 2016-07-18 2021-09-15 Merck Patent GmbH Formulation for led encapsulation material
KR101947113B1 (ko) * 2016-08-15 2019-02-12 주식회사 에스제이하이테크 투명 엘이디 디스플레이 패널 및 이를 이용한 디지털 사이니지 시스템
CN110139912A (zh) 2016-12-20 2019-08-16 默克专利股份有限公司 光学介质和光学器件
EP3645660B1 (en) * 2017-06-30 2022-09-14 Merck Patent GmbH Wavelength converting component
WO2019025392A1 (en) 2017-08-03 2019-02-07 Merck Patent Gmbh QUANTUM PERFORMANCE RECOVERY
JP7119332B2 (ja) * 2017-10-18 2022-08-17 信越化学工業株式会社 ポリシラザン化合物を用いた撥水処理剤および撥水処理方法
JP7064585B2 (ja) * 2017-10-31 2022-05-10 ダウ グローバル テクノロジーズ エルエルシー 太陽光発電封止材フィルムのためのポリオレフィン組成物
US11724963B2 (en) 2019-05-01 2023-08-15 Corning Incorporated Pharmaceutical packages with coatings comprising polysilazane
CN112420893B (zh) * 2020-10-28 2021-11-16 吉安市木林森半导体材料有限公司 一种使用硅氮烷进行封装的紫外led灯珠及其制备方法
CN112420892B (zh) * 2020-10-28 2021-11-16 吉安市木林森半导体材料有限公司 一种使用硅氮烷进行粘结的紫外led灯珠及其制备方法

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KR102016348B1 (ko) * 2013-02-28 2019-08-30 주식회사 동진쎄미켐 광학소자 봉지용 수지 조성물

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI737610B (zh) * 2015-05-20 2021-09-01 美商納諾光子公司 用於改進發光二極體之效率的程序

Also Published As

Publication number Publication date
KR20160035581A (ko) 2016-03-31
US20160172552A1 (en) 2016-06-16
SG10201800517XA (en) 2018-02-27
WO2015007778A1 (en) 2015-01-22
JP2016529354A (ja) 2016-09-23
EP3022249A1 (en) 2016-05-25
SG11201600363XA (en) 2016-02-26
CN105392825A (zh) 2016-03-09
US9991182B2 (en) 2018-06-05

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