TW201430965A - 倒裝晶片構件之樹脂密封方法 - Google Patents
倒裝晶片構件之樹脂密封方法 Download PDFInfo
- Publication number
- TW201430965A TW201430965A TW102116502A TW102116502A TW201430965A TW 201430965 A TW201430965 A TW 201430965A TW 102116502 A TW102116502 A TW 102116502A TW 102116502 A TW102116502 A TW 102116502A TW 201430965 A TW201430965 A TW 201430965A
- Authority
- TW
- Taiwan
- Prior art keywords
- resin
- temperature
- flip chip
- sealing method
- hot plate
- Prior art date
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 71
- 239000011347 resin Substances 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000007789 sealing Methods 0.000 title claims abstract description 22
- 229910000679 solder Inorganic materials 0.000 claims abstract description 76
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- 239000003822 epoxy resin Substances 0.000 claims description 23
- 229920000647 polyepoxide Polymers 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 20
- 230000008018 melting Effects 0.000 claims description 18
- 238000002844 melting Methods 0.000 claims description 18
- 229920005992 thermoplastic resin Polymers 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 229920002803 thermoplastic polyurethane Polymers 0.000 claims description 3
- 229920001187 thermosetting polymer Polymers 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 2
- 238000005476 soldering Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 10
- 239000000463 material Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 150000004060 quinone imines Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013011313A JP2014143316A (ja) | 2013-01-24 | 2013-01-24 | フリップチップ部品の樹脂封止方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201430965A true TW201430965A (zh) | 2014-08-01 |
Family
ID=51424389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102116502A TW201430965A (zh) | 2013-01-24 | 2013-05-09 | 倒裝晶片構件之樹脂密封方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2014143316A (ko) |
KR (1) | KR20140095406A (ko) |
TW (1) | TW201430965A (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10134662B2 (en) * | 2014-09-19 | 2018-11-20 | Sony Corporation | Mounting substrate and method of manufacturing the same |
JP2017045891A (ja) * | 2015-08-27 | 2017-03-02 | 日立化成株式会社 | 半導体装置及びそれを製造する方法 |
KR102064584B1 (ko) | 2015-10-29 | 2020-01-10 | 히타치가세이가부시끼가이샤 | 반도체용 접착제, 반도체 장치 및 그것을 제조하는 방법 |
WO2017195517A1 (ja) | 2016-05-09 | 2017-11-16 | 日立化成株式会社 | 半導体装置の製造方法 |
-
2013
- 2013-01-24 JP JP2013011313A patent/JP2014143316A/ja active Pending
- 2013-05-09 TW TW102116502A patent/TW201430965A/zh unknown
- 2013-05-24 KR KR1020130058910A patent/KR20140095406A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR20140095406A (ko) | 2014-08-01 |
JP2014143316A (ja) | 2014-08-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101388753B1 (ko) | Flip 칩 패키징 내에 몰딩된 언더필을 위한 장치 및 방법 | |
US8377745B2 (en) | Method of forming a semiconductor device | |
JP2023165871A (ja) | 電子部品装置の製造方法及び電子部品装置 | |
TW201426928A (zh) | 具有在封裝間之電絕緣材料之層疊封裝(PoP) | |
JPH10144733A (ja) | 半導体装置及びその製造方法 | |
JP2012028484A (ja) | モジュールと、その製造方法 | |
JP2011171540A (ja) | モジュールの製造方法 | |
TW201430965A (zh) | 倒裝晶片構件之樹脂密封方法 | |
JP5830847B2 (ja) | 半導体装置の製造方法及び接合方法 | |
TWI711506B (zh) | 焊接接合方法以及焊接接合裝置 | |
US7687314B2 (en) | Electronic apparatus manufacturing method | |
TW201620083A (zh) | 積層型半導體封裝體的製造裝置 | |
TWI478257B (zh) | 封裝結構及封裝製程 | |
TW201705311A (zh) | 晶片封裝基板、晶片封裝結構及其製作方法 | |
JP2008192725A (ja) | 半導体装置及びその製造方法並びに半導体装置の製造装置 | |
JP4752717B2 (ja) | モジュールの製造方法 | |
JP2008028075A (ja) | モジュールの製造方法と、それにより製造したモジュール | |
JP4024458B2 (ja) | 半導体装置の実装方法および半導体装置実装体の製造方法 | |
JP2004063524A (ja) | 実装装置及びその実装方法若しくはプリント配線基板 | |
JP2000058597A (ja) | 電子部品実装方法 | |
JP2001053109A (ja) | 半導体装置およびその製造方法 | |
TWI656582B (zh) | Semiconductor device mounting method and mounting device | |
JP2016051837A (ja) | 半導体装置の製造方法 | |
US9583366B2 (en) | Thermally-enhanced provision of underfill to electronic devices using a stencil | |
JP2001085471A (ja) | 電子部品の実装方法 |