TW201427128A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- TW201427128A TW201427128A TW102140666A TW102140666A TW201427128A TW 201427128 A TW201427128 A TW 201427128A TW 102140666 A TW102140666 A TW 102140666A TW 102140666 A TW102140666 A TW 102140666A TW 201427128 A TW201427128 A TW 201427128A
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- photoelectric conversion
- layer
- solar cell
- organic semiconductor
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- 239000004065 semiconductor Substances 0.000 claims abstract description 69
- 238000006243 chemical reaction Methods 0.000 claims abstract description 58
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 30
- 230000005525 hole transport Effects 0.000 claims abstract description 28
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 27
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 15
- 230000000737 periodic effect Effects 0.000 claims description 12
- 229910052696 pnictogen Inorganic materials 0.000 claims description 9
- 235000000177 Indigofera tinctoria Nutrition 0.000 claims description 8
- 229920000547 conjugated polymer Polymers 0.000 claims description 8
- 229940097275 indigo Drugs 0.000 claims description 8
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 claims description 8
- 150000004032 porphyrins Chemical group 0.000 claims description 7
- 125000005577 anthracene group Chemical group 0.000 claims description 4
- ICPSWZFVWAPUKF-UHFFFAOYSA-N 1,1'-spirobi[fluorene] Chemical group C1=CC=C2C=C3C4(C=5C(C6=CC=CC=C6C=5)=CC=C4)C=CC=C3C2=C1 ICPSWZFVWAPUKF-UHFFFAOYSA-N 0.000 claims description 3
- APQXWKHOGQFGTB-UHFFFAOYSA-N 1-ethenyl-9h-carbazole Chemical group C12=CC=CC=C2NC2=C1C=CC=C2C=C APQXWKHOGQFGTB-UHFFFAOYSA-N 0.000 claims description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 2
- 125000002490 anilino group Chemical group [H]N(*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 claims description 2
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 claims description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 2
- 125000000168 pyrrolyl group Chemical group 0.000 claims description 2
- 239000000463 material Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 8
- -1 polyparaphenylenevinylene skeleton Polymers 0.000 description 8
- 239000002131 composite material Substances 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- DUDJJJCZFBPZKW-UHFFFAOYSA-N [Ru]=S Chemical compound [Ru]=S DUDJJJCZFBPZKW-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 229920000144 PEDOT:PSS Polymers 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical group C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical compound C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 2
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 2
- MHIITNFQDPFSES-UHFFFAOYSA-N 25,26,27,28-tetrazahexacyclo[16.6.1.13,6.18,11.113,16.019,24]octacosa-1(25),2,4,6,8(27),9,11,13,15,17,19,21,23-tridecaene Chemical group N1C(C=C2C3=CC=CC=C3C(C=C3NC(=C4)C=C3)=N2)=CC=C1C=C1C=CC4=N1 MHIITNFQDPFSES-UHFFFAOYSA-N 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- HQHBAGKIEAOSNM-UHFFFAOYSA-N naphtholphthalein Chemical group C1=CC=C2C(C3(C4=CC=CC=C4C(=O)O3)C3=CC=C(C4=CC=CC=C43)O)=CC=C(O)C2=C1 HQHBAGKIEAOSNM-UHFFFAOYSA-N 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 2
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- YIUHGBNJJRTMIE-UHFFFAOYSA-N 1,4-dithiophen-2-yl-2,5-dihydropyrrolo[3,4-c]pyrrole-3,6-dione Chemical compound C=12C(=O)NC(C=3SC=CC=3)=C2C(=O)NC=1C1=CC=CS1 YIUHGBNJJRTMIE-UHFFFAOYSA-N 0.000 description 1
- YMMGRPLNZPTZBS-UHFFFAOYSA-N 2,3-dihydrothieno[2,3-b][1,4]dioxine Chemical compound O1CCOC2=C1C=CS2 YMMGRPLNZPTZBS-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000799 K alloy Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910001508 alkali metal halide Inorganic materials 0.000 description 1
- 150000008045 alkali metal halides Chemical class 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- YTYSNXOWNOTGMY-UHFFFAOYSA-N lanthanum(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[La+3].[La+3] YTYSNXOWNOTGMY-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- ZEGFMFQPWDMMEP-UHFFFAOYSA-N strontium;sulfide Chemical group [S-2].[Sr+2] ZEGFMFQPWDMMEP-UHFFFAOYSA-N 0.000 description 1
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- VJYJJHQEVLEOFL-UHFFFAOYSA-N thieno[3,2-b]thiophene Chemical compound S1C=CC2=C1C=CS2 VJYJJHQEVLEOFL-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/126—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one sulfur atom in the ring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/381—Metal complexes comprising a group IIB metal element, e.g. comprising cadmium, mercury or zinc
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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Abstract
本發明之目的在於提供一種光電轉換效率較高、耐久性優異之太陽電池。本發明之太陽電池至少具有陰極、陽極、配置於上述陰極與上述陽極間的光電轉換層、及配置於上述光電轉換層與上述陽極間的電洞傳輸層,上述電洞傳輸層含有具有羧基且具有共軛結構之有機半導體。
Description
本發明係關於一種光電轉換效率較高、耐久性優異之太陽電池。
自先前以來,開發有將複數種由半導體構成之層積層、並於該積層體之兩側設置有電極的光電轉換元件。又,亦研究使用將複數種半導體混合並複合化而成的複合膜代替如上所述之積層體。此種光電轉換元件中,各半導體作為P型半導體或N型半導體而發揮作用,藉由光激發而於P型半導體或N型半導體中產生光載子(電子-電洞對),電子於N型半導體中遷移,電洞於P型半導體中遷移,藉此產生電場。
目前,大部分經實用化之光電轉換元件為使用矽等無機半導體而製造之無機太陽電池。然而,無機太陽電池之製造耗費成本且大型化較為困難,利用範圍受限制,因此,使用有機半導體代替無機半導體所製造之有機太陽電池(例如,專利文獻1、2)受到關注。
有機太陽電池中,大多於含有N型半導體及P型半導體之光電轉換層、與陽極之間設置電洞傳輸層。
目前,作為電洞傳輸層之材料,大部分情況使用聚二氧乙基噻吩:聚苯乙烯磺酸(PEDOT:PSS)(例如,專利文獻3)。然而,PEDOT:PSS為水溶性,因此存在製膜性差之問題。又,PEDOT:PSS酸性強,因此亦成為
有機太陽電池劣化之原因。
又,亦對使用金屬氧化物等無機物作為電洞傳輸層之材料的情況進行研究,但該情形時,存在雖可獲得某種程度之耐久性但光電轉換效率降低的問題。
專利文獻1:日本特開2006-344794號公報
專利文獻2:日本專利第4120362號公報
專利文獻3:日本特開2006-237283號公報
本發明之目的在於提供一種光電轉換效率高、耐久性優異之太陽電池。
本發明之太陽電池其特徵在於:至少具有陰極、陽極、配置於上述陰極與上述陽極間的光電轉換層、及配置於上述光電轉換層與上述陽極間的電洞傳輸層,上述電洞傳輸層含有具有羧基且具有共軛結構的有機半導體。
以下,對本發明進行詳細敍述。
本發明人發現,於至少具有陰極、陽極、配置於上述陰極與上述陽極間的光電轉換層、及配置於上述光電轉換層與上述陽極間的電洞傳輸層的太陽電池中,藉由使電洞傳輸層含有具有羧基且具有共軛結構之有機半導體,可維持高光電轉換效率且提高耐久性,從而完成本發明。
本發明之太陽電池至少具有陰極、陽極、配置於上述陰極與上述陽極間的光電轉換層、及配置於上述光電轉換層與上述陽極間的電洞傳輸層。
上述陰極之材料並無特別限定,可使用習知之公知材料,例如可列舉:鈉、鈉-鉀合金、鋰、鎂、鋁、鎂-銀混合物、鎂-銦混合物、鋁-鋰合
金、Al/Al2O3混合物、Al/LiF混合物、SnO2、FTO、AZO、IZO、GZO、ITO等。該等材料可單獨使用,亦可併用2種以上。
上述陽極之材料並無特別限定,可使用習知之公知材料,例如可列舉:金等金屬、CuI、ITO(銦錫氧化物)、SnO2、AZO、IZO、GZO等導電性透明材料、導電性透明聚合物等。該等材料可單獨使用,亦可併用2種以上。
上述電洞傳輸層含有具有羧基且具有共軛結構之有機半導體。上述電洞傳輸層係藉由塗敷而穩定地且簡便地製膜。
具有羧基且具有共軛結構之有機半導體可溶解於有機溶劑,製膜性優異,因此藉由使用此種有機半導體,本發明之太陽電池光電轉換效率變高,且耐久性亦優異。又,具有羧基且具有共軛結構之有機半導體為弱酸性,因此不易使太陽電池劣化。故,本發明之太陽電池耐久性進一步提高。
上述具有羧基且具有共軛結構之有機半導體並無特別限定,例如,較佳為具有羧基且具有選自由噻吩骨架、對苯伸乙烯(paraphenylene vinylene)骨架、乙烯咔唑骨架、苯胺骨架、乙炔骨架、吡咯骨架、苝骨架、茀骨架、吲哚啉骨架、螺二茀(spirobifluorene)骨架、酞青骨架及卟啉骨架所組成之群中之一種以上骨架。又,亦可為其等之衍生物等之骨架。其中,較佳為選自由噻吩骨架、對苯伸乙烯骨架、吲哚啉骨架及酞青骨架所組成之群中之一種以上骨架,噻吩骨架由於具有硫元素故而更佳。
作為上述噻吩骨架,更具體而言,例如可列舉:烷基噻吩、苯并噻吩、伸乙二氧基噻吩、噻吩并噻吩(thienothiophene)等。其中,烷基噻吩由於側鏈而對有機溶劑之溶解性提高、製膜性提高,故而較佳。
又,因共軛長度延長而載子遷移率變高,因此上述具有羧基且具有共軛結構之有機半導體較佳為共軛聚合物。於上述具有羧基且具有共軛結構之有機半導體為共軛聚合物之情形時,重量平均分子量並無特別限定,較佳之下限為1萬且較佳之上限為100萬。若上述重量平均分子量超
過100萬,則有上述具有羧基且具有共軛結構之有機半導體對有機溶劑之溶解性降低、製膜性降低之情形。
上述具有羧基且具有噻吩骨架之有機半導體中,作為市售品,例如可列舉P3CT(Rieke metals公司製造,具有羧基且具有噻吩骨架之共軛聚合物,具有下述式(1)所表示之結構單元)等。
式(1)中,n表示整數。
上述具有羧基且具有吲哚啉骨架之有機半導體中,作為市售品,例如可列舉D-149(sigma-aldrich公司製造,具有下述式(2)所表示之結構)等。
作為上述具有羧基且具有對苯伸乙烯骨架之有機半導體,例如可列舉導入有羧基之對苯伸乙烯衍生物(具有下述式(3)所表示之結構單元)等。
式(3)中,n表示整數。
作為上述具有羧基且具有酞青骨架之有機半導體,例如可列舉導入有羧基之酞青衍生物(具有下述式(4)所表示之結構)等。
上述電洞傳輸層之厚度之較佳下限為1nm,較佳上限為2000nm。若上述厚度為1nm以上,則可充分地阻擋電子。若上述厚度為2000nm以下,則難以變成電洞傳輸時之阻力而可防止光電轉換效率降低。上述電洞傳輸層之厚度之更佳下限為3nm,更佳上限為1000nm,進而較佳之下限為5nm,進而較佳之上限為500nm。
上述光電轉換層只要含有N型半導體及P型半導體,則並無特別限定,由太陽電池之光電轉換效率及耐久性變高的觀點而言,較佳為具備含有週期表第15族元素之硫化物的層(以下亦稱為硫化物層)、與含有有機半導體之層(以下亦稱為有機半導體層)的層。
推測於此種光電轉換層中,上述硫化物層主要作為N型半導體而發揮作用,上述有機半導體層主要作為P型半導體而發揮作用,上述硫化物層亦可部分性地作為P型半導體而發揮作用,上述有機半導體層亦可部分性地作為N型半導體而發揮作用。又,此種光電轉換層可為含有上述硫化物層與上述有機半導體層之積層體,亦可為將上述硫化物層與上述有機半導體層混合並複合化而成的複合膜,但複合膜可使有機半導體之電荷分離效率提高,因此更佳。
再者,上述光電轉換層中主要作為N型半導體而發揮作用之半導體除了上述週期表第15族元素之硫化物以外,例如亦可列舉週期表第15族元素以外之元素的硫化物(例如,硫化鎘)、有機半導體(例如,富勒烯衍生物)等。
上述週期表15族元素之硫化物較佳為硫化銻、硫化鉍,更佳為硫化銻。硫化銻與有機半導體之能階之配合性較佳,且與習知之氧化鋅、氧化鈦等相比對可見光之吸收更大。因此,藉由上述週期表第15族元素之硫化物為硫化銻,太陽電池之光電轉換效率變高。該等週期表第15族元素之硫化物可單獨使用,亦可併用2種以上。
上述週期表第15族元素之硫化物亦可為於同一分子中含有2種以上週期表第15族元素之元素的複合硫化物。
關於上述硫化物層,只要於不妨礙本發明之效果之範圍內,則除了上述週期表第15族元素之硫化物以外亦可含有其他元素。上述其他元素並無特別限定,較佳為屬於週期表第4週期、第5週期及第6週期之元素,具體而言,例如可列舉:銦、鎵、錫、鎘、銅、鋅、鋁、鎳、銀、鈦、釩、鈮、鉬、鉭、鐵、鈷等。該等其他元素可單獨使用,亦可併用2種以上。其中,就電子之遷移率變高而言,較佳為銦、鎵、錫、鎘、鋅、銅。
上述其他元素之含量,於上述硫化物層中較佳上限為50重量%。若上述含量為50重量%以下,則不會對硫化物層與有機半導體之配合性造成不良影響,不易生成光電轉換效率之降低。
上述硫化物層較佳為結晶性半導體。藉由上述硫化物層為結晶性半導體,而電子之遷移率變高,光電轉換效率變高。
再者,所謂結晶性半導體,係指利用X射線繞射測定等進行測定而可檢測出散射波峰的半導體。
又,作為上述硫化物層之結晶性之指標,亦可使用結晶化度。上述硫化物層之結晶化度之較佳下限為30%。若上述結晶化度為30%以上,則電子之遷移率變得更高,光電轉換進一步提高。上述結晶化度之更佳下限為50%,進而較佳之下限為70%。
再者,結晶化度可藉由如下方式而求出:藉由擬合將利用X射線繞射測定等而檢測出之源自結晶質之散射波峰、與源自非晶質部之暈圈分離,求出各自之強度積分,並算出結晶質部分於總體中之比。
作為提高上述硫化物層之結晶化度之方法,例如可列舉對硫化物層進行熱退火、雷射或閃光燈等強度較強之光之照射、準分子光照射、電漿照射等方法。其中,由可降低上述週期表第15族元素之硫化物之氧化而言,較佳為進行強度較強之光之照射、電漿照射等的方法。
上述有機半導體並無特別限定,例如可列舉聚(3-烷基噻吩)等具有噻吩骨架之化合物等。又,例如亦可列舉具有聚對苯伸乙烯骨架、聚乙烯咔唑骨架、聚苯胺骨架、聚乙炔骨架、螺二茀骨架等之導電性高分子等。進而,例如亦可列舉具有酞青骨架、萘酚菁骨架、稠五苯骨架、苯并卟啉骨架等卟啉骨架等之化合物。其中,由於耐久性相對較高,故而較佳為具有噻吩骨架、酞青骨架、萘酚菁骨架、苯并卟啉骨架之化合物。
上述有機半導體亦可為如上所述於電洞傳輸層所含有之具有羧基且具
有共軛結構之有機半導體。即,上述具有羧基且具有共軛結構之有機半導體可兼作上述電洞傳輸層、及於上述光電轉換層中主要作為P型半導體而發揮作用之半導體。
上述有機半導體,就可吸收長波長區域之光而言,較佳為施體-受體型。其中,更佳為具有噻吩骨架之施體-受體型化合物,於具有噻吩骨架之施體-受體型化合物中,就光吸收波長之觀點而言,尤佳為噻吩-二酮基吡咯并吡咯聚合物。
於上述光電轉換層為積層體之情形時,上述硫化物層之厚度之較佳下限為5nm,較佳上限為5000nm。若上述厚度為5nm以上,則可充分地吸收光,使光電轉換效率進一步提高。若上述厚度為5000nm以下,則抑制無法電荷分離之區域之產生,而使光電轉換效率提高。上述硫化物層之厚度之更佳下限為10nm,更佳上限為1000nm,進而較佳之下限為20nm,進而較佳之上限為500nm。
於上述光電轉換層為積層體之情形時,上述有機半導體層之厚度之較佳下限為5nm,較佳上限為1000nm。若上述厚度為5nm以上,則可充分地吸收光,而使光電轉換效率進一步提高。若上述厚度為1000nm以下,則抑制無法電荷分離之區域之產生,而使光電轉換效率提高。上述有機半導體層之厚度之更佳下限為10nm,更佳上限為500nm,進而較佳之下限為20nm,進而較佳之上限為200nm。
又,於上述光電轉換層為複合膜之情形時,硫化物層與有機半導體層之比率非常重要。硫化物層與有機半導體層之比率較佳為1:9~9:1(體積比)。若上述比率偏離上述範圍,則有時電洞或電子無法到達電極,因此有時導致光電轉換效率降低。上述比率更佳為2:8~8:2(體積比)。
上述複合膜之厚度之較佳下限為30nm,較佳上限為3000
nm。若上述厚度為30nm以上,則可充分地吸收光,而使光電轉換效率進一步提高。若上述厚度為3000nm以下,則電荷容易到達電極,而使光電轉換效率提高。上述複合膜之厚度之更佳下限為40nm,更佳上限為1000nm,進而較佳之下限為50nm,進而較佳之上限為500nm。
本發明之太陽電池進而亦可於上述陰極與上述光電轉換層間具有電子傳輸層。
上述電子傳輸層之材料並無特別限定,例如可列舉:N型導電性高分子、N型低分子有機半導體、N型金屬氧化物、N型金屬硫化物、鹵化鹼金屬、鹼金屬、界面活性劑等,具體而言,例如可列舉:含氰基之聚苯乙炔、含硼之聚合物、2,9-二甲基-4,7-二苯基-1,10-菲咯啉(Bathocuproine)、4,7-二苯基-1,10-鄰二氮雜菲、羥基喹啉基鋁、二唑化合物、苯并咪唑化合物、萘四羧酸化合物、苝衍生物、氧化膦化合物、硫化膦化合物、含氟基之酞青、氧化鈦、氧化鋅、氧化銦、氧化錫、氧化鎵、硫化錫、硫化銦、硫化鋅等。
上述電子傳輸層之厚度之較佳下限為1nm,較佳上限為200nm。若上述厚度為1nm以上,則可充分地阻擋電洞。若上述厚度為200nm以下,則難以形成電子傳輸時之阻力,而可防止光電轉換效率之降低。上述電子傳輸層之厚度之更佳下限為3nm,更佳上限為150nm,進而較佳之下限為5nm,進而較佳之上限為100nm。
製造本發明之太陽電池之方法並無特別限定,例如可列舉如下方法等:在基板上形成電極(陽極)後,於該電極(陽極)之表面上藉由塗敷等而將電洞傳輸層製膜,繼而,於該電洞傳輸層之表面上藉由旋轉塗佈法等印刷法、真空蒸鍍法等將光電轉換層製膜,繼而,根據需要於該光電轉換層之表面上將電子傳輸層製膜,進而於該電子傳輸層之表面上形成電極(陰極)。又,亦可於在基板上形成電極(陰極)後,依序形成電子
傳輸層、光電轉換層、電洞傳輸層、電極(陽極)。
根據本發明,可提供光電轉換效率高、耐久性優異之太陽電池。
以下,列舉實施例更為詳細地說明本發明,但本發明並不僅限於該等實施例。
(實施例1)
於作為透明電極(陰極)之ITO膜之表面上,利用旋轉塗佈法將TiO2層製膜而作為電子傳輸層。繼而,於TiO2層之表面上利用蒸鍍法積層硫化銻,並於所獲得之由硫化銻構成之層之表面上,利用旋轉塗佈法以膜厚成為10~20nm左右之方式塗佈P3HT(Merck公司製造、具有3位上具有己基之噻吩骨架之共軛聚合物、具有下述式(5)所表示之結構單元、重量平均分子量77500),而形成光電轉換層。繼而,於光電轉換層之表面上以成為膜厚15nm左右之方式塗佈P3CT(Rieke metals公司製造、具有羧基且具有噻吩骨架之共軛聚合物、具有上述式(1)所表示之結構單元、重量平均分子量20000),而形成電洞傳輸層。進而,於電洞傳輸層之表面上利用蒸鍍法積層金作為金屬電極(陽極),而獲得太陽電池。
式(5)中,n表示整數。
(實施例2~9、比較例1~10)
使用表1、2中所示者作為電洞傳輸層之材料、光電轉換層之材料,除此以外,以與實施例1同樣之方式獲得太陽電池。再者,將實施例及比較例中使用之材料示於以下。
(1)具有羧基且具有共軛結構之有機半導體
.P3CT(Rieke metals公司製造、具有羧基且具有噻吩骨架之共軛聚合物、具有上述式(1)所表示之結構單元、重量平均分子量20000)
.D-149(具有上述式(2)所表示之結構、sigma-aldrich公司製造之5-[[4-[4-(2,2-二苯基乙烯基)苯基]-1,2,3-3a,4,8b-六氫環戊烯并[b]吲哚-7-基]亞甲基]-2-(3-乙基-4-氧代-2-硫酮基-5-噻唑))
.對苯伸乙烯衍生物(具有上述式(3)所表示之結構單元之導入有羧基的對苯伸乙烯衍生物、重量平均分子量50000)
.酞青衍生物(具有上述式(4)所表示之結構之導入有羧基的酞青衍生物)
(2)其他
.P3HT(Merck公司製造、具有於3位具有己基之噻吩骨架之共軛聚合物、具有上述式(5)所表示之結構單元、重量平均分子量77500)
.D-149衍生物(藉由水解使D-149之羧基變成酯基而成者)
.PEDOT:PSS(聚伸乙二氧基噻吩:聚苯乙烯磺酸)
.PE(聚乙烯)
.α-6T(具有下述式(6)所表示之結構之α-六噻吩)
.DPP(具有下述式(7)所表示之結構之3,6-雙(2-噻吩基)-2,5-二氫吡咯并[3,4-c]吡咯-1,4-二酮)
.MK-2(具有下述式(8)所表示之結構之綜研化學公司製造之有機半導體)
.PCBM(具有下述式(9)所表示之結構之sigma-aldrich公司製造之富勒烯衍生物)
〈評價〉
對實施例及比較例中所獲得之太陽電池進行以下評價。將結果示於表1、2。
(1)電洞傳輸層之製膜性
對在光電轉換層之表面上形成電洞傳輸層時的製膜性,按下述基準進行評價。
○:可見程度內並無不均,獲得均勻之膜
×:可見程度內可見不均,未獲得均勻之膜
(2)光電轉換效率之測定、及耐久性評價
使用太陽電池特性評價系統CEP-015(分光計器公司製造),測定AM1.5(100mW/cm2)之擬似太陽光照射下之太陽電池的電流密度電壓特性。將實施例1中所獲得之太陽電池之電流密度電壓特性設為1而作為標準。
又,不對太陽電池進行玻璃密封,並於溫度60℃、濕度30%之條件下經過72小時後,測定此時之電流密度電壓特性,並將經過72小時後之電流密度電壓特性相對於經過72小時前之值作為耐久性而進行評價。
(3)綜合評價
按下述基準進行評價。
○:電洞傳輸層之製膜性為○,且光電轉換效率為0.8以上,且耐久性
為0.6以上
×:電洞傳輸層之製膜性為×,或光電轉換效率未達0.8,或耐久性未達0.6
[產業上之可利用性]
根據本發明,可提供光電轉換效率高、耐久性優異之太陽電池。
Claims (5)
- 一種太陽電池,至少具有陰極、陽極、配置於該陰極與該陽極間的光電轉換層、及配置於該光電轉換層與該陽極間的電洞傳輸層,該電洞傳輸層含有具有羧基且具有共軛結構之有機半導體。
- 如申請專利範圍第1項之太陽電池,其中,具有羧基且具有共軛結構之有機半導體為共軛聚合物,重量平均分子量為1萬~100萬。
- 如申請專利範圍第1或2項之太陽電池,其中,具有羧基且具有共軛結構之有機半導體具有選自由噻吩骨架、對苯伸乙烯(paraphenylene vinylene)骨架、乙烯咔唑骨架、苯胺骨架、乙炔骨架、吡咯骨架、苝骨架、茀骨架、吲哚啉骨架、螺二茀(spirobifluorene)骨架、酞青骨架及卟啉骨架組成之群中之一種以上骨架。
- 如申請專利範圍第1、2或3項之太陽電池,其中,光電轉換層具備含有週期表第15族元素之硫化物的層、及含有有機半導體的層。
- 如申請專利範圍第1、2、3或4項之太陽電池,其中,進一步於陰極與光電轉換層間具有電子傳輸層。
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