CN104769737A - 太阳能电池 - Google Patents
太阳能电池 Download PDFInfo
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- CN104769737A CN104769737A CN201380057547.9A CN201380057547A CN104769737A CN 104769737 A CN104769737 A CN 104769737A CN 201380057547 A CN201380057547 A CN 201380057547A CN 104769737 A CN104769737 A CN 104769737A
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- photoelectric conversion
- solar cell
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- 239000004065 semiconductor Substances 0.000 claims abstract description 69
- 238000006243 chemical reaction Methods 0.000 claims abstract description 56
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 29
- 230000005540 biological transmission Effects 0.000 claims description 26
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 17
- 230000000737 periodic effect Effects 0.000 claims description 12
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 12
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 11
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 9
- 229920000547 conjugated polymer Polymers 0.000 claims description 8
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 5
- 125000003387 indolinyl group Chemical group N1(CCC2=CC=CC=C12)* 0.000 claims description 4
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims description 3
- 150000004032 porphyrins Chemical group 0.000 claims description 3
- APQXWKHOGQFGTB-UHFFFAOYSA-N 1-ethenyl-9h-carbazole Chemical group C12=CC=CC=C2NC2=C1C=CC=C2C=C APQXWKHOGQFGTB-UHFFFAOYSA-N 0.000 claims description 2
- 125000002490 anilino group Chemical group [H]N(*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 claims description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 2
- 125000000168 pyrrolyl group Chemical group 0.000 claims description 2
- 230000005525 hole transport Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 14
- -1 aluminum-copper-lithium Chemical compound 0.000 description 13
- 230000000873 masking effect Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 239000002131 composite material Substances 0.000 description 8
- 229940007424 antimony trisulfide Drugs 0.000 description 6
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical group [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- 229920000144 PEDOT:PSS Polymers 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical compound C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 2
- MHIITNFQDPFSES-UHFFFAOYSA-N 25,26,27,28-tetrazahexacyclo[16.6.1.13,6.18,11.113,16.019,24]octacosa-1(25),2,4,6,8(27),9,11,13,15,17,19,21,23-tridecaene Chemical group N1C(C=C2C3=CC=CC=C3C(C=C3NC(=C4)C=C3)=N2)=CC=C1C=C1C=CC4=N1 MHIITNFQDPFSES-UHFFFAOYSA-N 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 125000004051 hexyl group Chemical class [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- YIUHGBNJJRTMIE-UHFFFAOYSA-N 1,4-dithiophen-2-yl-2,5-dihydropyrrolo[3,4-c]pyrrole-3,6-dione Chemical compound C=12C(=O)NC(C=3SC=CC=3)=C2C(=O)NC=1C1=CC=CS1 YIUHGBNJJRTMIE-UHFFFAOYSA-N 0.000 description 1
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000733 Li alloy Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000574 NaK Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- NSIKFNOYIGGILA-UHFFFAOYSA-N [Na].[Na].[K] Chemical compound [Na].[Na].[K] NSIKFNOYIGGILA-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- NNLOHLDVJGPUFR-UHFFFAOYSA-L calcium;3,4,5,6-tetrahydroxy-2-oxohexanoate Chemical compound [Ca+2].OCC(O)C(O)C(O)C(=O)C([O-])=O.OCC(O)C(O)C(O)C(=O)C([O-])=O NNLOHLDVJGPUFR-UHFFFAOYSA-L 0.000 description 1
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000005582 pentacene group Chemical group 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- NBFBORAIBRIYGM-UHFFFAOYSA-N pyrrolo[3,2-b]pyrrole-5,6-dione;thiophene Chemical compound C=1C=CSC=1.C1=CN=C2C(=O)C(=O)N=C21 NBFBORAIBRIYGM-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- VJYJJHQEVLEOFL-UHFFFAOYSA-N thieno[3,2-b]thiophene Chemical compound S1C=CC2=C1C=CS2 VJYJJHQEVLEOFL-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/126—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one sulfur atom in the ring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/381—Metal complexes comprising a group IIB metal element, e.g. comprising cadmium, mercury or zinc
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
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Abstract
本发明的目的在于,提供光电转换效率高、且耐久性优异的太阳能电池。本发明是一种太阳能电池,其至少具有阴极、阳极、在所述阴极与所述阳极之间配置的光电转换层、以及在所述光电转换层与所述阳极之间配置的空穴传输层,所述空穴传输层含有具有羧基且具有共轭结构的有机半导体。
Description
技术领域
本发明涉及光电转换效率高且耐久性优异的太阳能电池。
背景技术
一直以来,在不断开发层叠了多种包含半导体的层、且在该层叠体的两侧设置有电极的光电转换元件。另外,还研究了使用将多种半导体混合、复合化而得的复合膜来代替这种层叠体。在这种光电转换元件中,各半导体作为P型半导体或N型半导体而发挥作用,通过光激发而在P型半导体或N型半导体中生成光载流子(电子-空穴对),电子在N型半导体中移动,空穴在P型半导体中移动,由此产生电场。
现在,多数的已实用化的光电转换元件为使用硅等无机半导体而制造的无机太阳能电池。但是,无机太阳能电池的制造耗费成本且难以大型化,而且利用范围受限,因此使用有机半导体代替无机半导体而制造的有机太阳能电池(例如专利文献1、2)受到注目。
在有机太阳能电池中,大多在含有N型半导体及P型半导体的光电转换层、与阳极之间设置空穴传输层。
现在,作为空穴传输层的材料,在大多数的情况下,使用的是聚乙烯二氧噻吩:聚苯乙烯磺酸(PEDOT:PSS)(例如专利文献3)。但是,PEDOT:PSS为水溶性,因此存在制膜性差的问题。另外,PEDOT:PSS为强酸性,因此也成为有机太阳能电池劣化的原因。
另外,还研究了使用金属氧化物等无机物作为空穴传输层的材料,但在这种情况下,虽然可获得某种程度的耐久性,但存在光电转换效率降低的问题。
现有技术文献
专利文献
专利文献1:日本特开2006-344794号公报
专利文献2:日本专利第4120362号公报
专利文献3:日本特开2006-237283号公报
发明内容
发明要解决的课题
本发明的目的在于,提供一种光电转换效率高且耐久性优异的太阳能电池。
用于解决课题的方法
本发明为一种太阳能电池,其特征在于,至少具有阴极、阳极、在所述阴极与所述阳极之间配置的光电转换层、以及在所述光电转换层与所述阳极之间配置的空穴传输层,所述空穴传输层含有具有羧基且具有共轭结构的有机半导体。
以下,对本发明进行详述。
本发明人发现,在至少具有阴极、阳极、在所述阴极与所述阳极之间配置的光电转换层、以及在所述光电转换层与所述阳极之间配置的空穴传输层的太阳能电池中,通过使空穴传输层含有具有羧基且具有共轭结构的有机半导体,从而能够维持高光电转换效率且能够提高耐久性,至此完成了本发明。
本发明的太阳能电池至少具有阴极、阳极、在所述阴极与所述阳极之间配置的光电转换层、以及在所述光电转换层与所述阳极之间配置的空穴传输层。
上述阴极的材料没有特别限定,可以使用以往公知的材料,例如可举出钠、钠-钾合金、锂、镁、铝、镁-银混合物、镁-铟混合物、铝-锂合金、Al/Al2O3混合物、Al/LiF混合物、SnO2、FTO、AZO、IZO、GZO、ITO等。这些材料可以单独使用,也可以并用2种以上。
上述阳极的材料没有特别限定,可以使用以往公知的材料,例如可举出金等金属、CuI、ITO(铟锡氧化物)、SnO2、AZO、IZO、GZO等导电性透明材料、导电性透明聚合物等。这些材料可以单独使用,也可以并用2种以上。
上述空穴传输层含有具有羧基且具有共轭结构的有机半导体。这种空穴传输层可以通过涂敷而稳定且简便地制膜。
具有羧基且具有共轭结构的有机半导体能够溶解于有机溶剂,制膜性优异,因此,通过使用这种有机半导体,从而可使本发明的太阳能电池的光电转换效率变高,耐久性也优异。另外,具有羧基且具有共轭结构的有机半导体为弱酸性,因此不易使太阳能电池劣化。因此,本发明的太阳能电池的耐久性进一步变高。
上述具有羧基且具有共轭结构的有机半导体没有特别限定,例如优选具有羧基且具有选自噻吩骨架、对亚苯基亚乙烯基骨架、乙烯基咔唑骨架、苯胺骨架、乙炔骨架、吡咯骨架、苝骨架、芴骨架、吲哚啉骨架、螺二芴骨架、酞菁骨架及卟啉骨架中的一种以上的骨架。另外,也可以是它们的衍生物等的骨架。其中,优选为选自噻吩骨架、对亚苯基亚乙烯基骨架、吲哚啉骨架及酞菁骨架中的一种以上的骨架,噻吩骨架因具有硫元素而更为优选。
作为上述噻吩骨架,更具体而言,例如可举出烷基噻吩、苯并噻吩、乙烯二氧噻吩、噻吩并噻吩等。其中,烷基噻吩因侧链而在有机溶剂中的溶解性提高,制膜性提高,因此优选。
另外,因共轭长度伸长会使载流子迁移率变高,因此上述具有羧基且具有共轭结构的有机半导体优选为共轭聚合物。在上述具有羧基且具有共轭结构的有机半导体为共轭聚合物的情况下,重均分子量没有特别限定,但优选的下限为1万,优选的上限为100万。若上述重均分子量超过100万,则有时上述具有羧基且具有共轭结构的有机半导体在有机溶剂中的溶解性降低,制膜性降低。
在上述具有羧基且具有噻吩骨架的有机半导体中,作为市售品,例如可举出P3CT(Rieke metals公司制,具有羧基且具有噻吩骨架的共轭聚合物,具有下述式(1)所表示的构成单元)等。
式(1)中,n表示整数。
上述具有羧基且具有吲哚啉骨架的有机半导体中,作为市售品,例如可举出D-149(sigma-aldrich公司制,具有下述式(2)所表示的结构)等。
作为上述具有羧基且具有对亚苯基亚乙烯基骨架的有机半导体,例如可举出导入了羧基的对亚苯基亚乙烯衍生物(paraphenylene vinylenederivative)(具有下述式(3)所表示的构成单元)等。
式(3)中,n表示整数。
作为上述具有羧基且具有酞菁骨架的有机半导体,例如可举出导入了羧基的酞菁衍生物(具有下述式(4)所表示的结构)等。
上述空穴传输层的厚度的优选的下限为1nm,优选的上限为2000nm。若上述厚度为1nm以上,则变得能够充分地封阻电子。若上述厚度为2000nm以下,则不易成为空穴传输时的阻力,能够防止光电转换效率的降低。上述空穴传输层的厚度的更优选的下限为3nm,更优选的上限为1000nm,进一步优选的下限为5nm,进一步优选的上限为500nm。
上述光电转换层只要含有N型半导体及P型半导体,就没有特别限定,但从太阳能电池的光电转换效率及耐久性变高的观点考虑,优选为包含含有元素周期表15族元素的硫化物的层(以下,也称为硫化物层)、和含有有机半导体的层(以下,也称为有机半导体层)的层。
在这种光电转换层中,推测上述硫化物层主要作为N型半导体来发挥作用,上述有机半导体层主要作为P型半导体来发挥作用,但上述硫化物层也可以部分地作为P型半导体来发挥作用,上述有机半导体层也可以部分地作为N型半导体来发挥作用。另外,这种光电转换层可以为包含上述硫化物层和上述有机半导体层的层叠体,也可以为将上述硫化物层和上述有机半导体层混合、复合化而得的复合膜,但复合膜因能够使有机半导体的电荷分离效率提高而更为优选。
需要说明的是,在上述光电转换层中,主要作为N型半导体来发挥作用的半导体除了上述元素周期表15族元素的硫化物之外,例如还可以举出元素周期表15族元素以外的元素的硫化物(例如硫化镉)、有机半导体(例如富勒烯衍生物)等。
上述元素周期表15族元素的硫化物优选为硫化锑、硫化铋,更优选为硫化锑。硫化锑与有机半导体的能级的适合性良好,并且,与以往的氧化锌、氧化钛等相比对可见光的吸收较大。因此,通过使上述元素周期表15族元素的硫化物为硫化锑,从而太阳能电池的光电转换效率变高。这些元素周期表15族元素的硫化物可以单独使用,也可以并用2种以上。
上述元素周期表15族元素的硫化物也可以为在同一分子中含有元素周期表15族元素中的2种以上元素的复合硫化物。
对于上述硫化物层而言,只要在不阻碍本发明的效果的范围内,就可以在上述元素周期表15族元素的硫化物的基础上还含有其他的元素。上述其他的元素没有特别限定,但优选属于元素周期表的第4周期、第5周期及第6周期的元素,具体而言,例如可举出铟、镓、锡、镉、铜、锌、铝、镍、银、钛、钒、铌、钼、钽、铁、钴等。这些其他的元素可以单独使用,也可以并用2种以上。其中,从电子的迁移率变高的观点考虑,优选为铟、镓、锡、镉、锌、铜。
上述其他的元素的含量在上述硫化物层中的优选的上限为50重量%。若上述含量为50重量%以下,则不会对硫化物层与有机半导体的适合性带来不良影响,光电转换效率不易发生降低。
上述硫化物层优选为结晶性半导体。通过使上述硫化物层为结晶性半导体,从而电子的迁移率变高,光电转换效率变高。
需要说明的是,结晶性半导体是指通过X射线衍射测定等进行测定而能够检测到散射峰的半导体。
另外,作为上述硫化物层的结晶性的指标,也可以使用结晶度。上述硫化物层的结晶度的优选的下限为30%。若上述结晶度为30%以上,则电子的迁移率进一步变高,光电转换进一步提高。上述结晶度的更优选的下限为50%,进一步优选的下限为70%。
需要说明的是,结晶度能够如下求得:将通过X射线衍射测定等而检测到结晶质来源的散射峰、和非晶质部来源的光晕(halo)利用拟合进行分离,求出各自的强度积分,算出整体中的结晶质部分的比。
作为提高上述硫化物层的结晶度的方法,例如可举出:对硫化物层进行热退火、激光或闪光灯等强度强的光的照射、准分子光照射、等离子体照射等的方法。其中,从能够降低上述元素周期表15族元素的硫化物的氧化的观点考虑,优选进行强度较强的光的照射、等离子体照射等的方法。
上述有机半导体没有特别限定,例如,可举出聚(3-烷基噻吩)等具有噻吩骨架的化合物等。另外,例如也可以举出具有聚对亚苯基亚乙烯基骨架、聚乙烯基咔唑骨架、聚苯胺骨架、聚乙炔骨架、螺二芴骨架等的导电性高分子等。此外,例如还可以举出具有酞菁骨架、萘酞菁骨架、并五苯骨架、苯并卟啉骨架等卟啉骨架等的化合物。其中,从耐久性比较高的方面考虑,优选具有噻吩骨架、酞菁骨架、萘酞菁骨架、苯并卟啉骨架的化合物。
上述有机半导体也可以为上述这种空穴传输层所包含的具有羧基且具有共轭结构的有机半导体。即,上述具有羧基且具有共轭结构的有机半导体也能够兼作上述空穴传输层、和在上述光电转换层中主要作为P型半导体来发挥作用的半导体。
从能够吸收长波长区域的光的方面考虑,上述有机半导体也优选为供体-受体型。其中,更优选为具有噻吩骨架的供体-受体型的化合物,在具有噻吩骨架的供体-受体型的化合物中,从光吸收波长的观点考虑,特别优选噻吩-二酮吡咯并吡咯聚合物。
在上述光电转换层为层叠体的情况下,上述硫化物层的厚度的优选的下限为5nm、优选的上限为5000nm。若上述厚度为5nm以上,则变得能够充分地吸收光,光电转换效率进一步提高。若上述厚度为5000nm以下,则抑制无法电荷分离的区域的产生,有助于光电转换效率的提高。上述硫化物层的厚度的更优选的下限为10nm,更优选的上限为1000nm,进一步优选的下限为20nm,进一步优选的上限为500nm。
在上述光电转换层为层叠体的情况下,上述有机半导体层的厚度的优选下限为5nm,优选上限为1000nm。若上述厚度为5nm以上,则变得能够充分地吸收光,光电转换效率进一步提高。若上述厚度为1000nm以下,则抑制无法电荷分离的区域的产生,有助于光电转换效率的提高。上述有机半导体层的厚度的更优选的下限为10nm,更优选的上限为500nm,进一步优选的下限为20nm,进一步优选的上限为200nm。
另外,在上述光电转换层为复合膜的情况下,硫化物层与有机半导体层的比率非常重要。硫化物层与有机半导体层的比率优选为1∶9~9∶1(体积比)。若上述比率偏离上述范围,则有时空穴或电子无法到达电极,因此有时导致光电转换效率的降低。上述比率更优选为2∶8~8∶2(体积比)。
上述复合膜的厚度的优选的下限为30nm、优选的上限为3000nm。若上述厚度为30nm以上,则变得能够充分地吸收光,光电转换效率进一步提高。若上述为3000nm以下,则电荷变得易于到达电极,有助于光电转换效率的提高。上述复合膜的厚度的优选的下限为40nm,更优选的上限为1000nm,进一步优选的下限为50nm,进一步优选的上限为500nm。
本发明的太阳能电池在上述阴极与上述光电转换层之间还可以具有电子传输层。
上述电子传输层的材料没有特别限定,例如,可举出N型导电性高分子、N型低分子有机半导体、N型金属氧化物、N型金属硫化物、卤化碱金属、碱金属、表面活性剂等,具体而言,例如可举出含氰基的聚亚苯基亚乙烯、含硼聚合物、浴铜灵、4,7-二苯基-1,10-菲绕啉、羟基喹啉铝、噁二唑化合物、苯并咪唑化合物、萘四羧酸化合物、苝衍生物、氧化膦化合物、硫化膦化合物、含氟基的酞菁、氧化钛、氧化锌、氧化铟、氧化锡、氧化镓、硫化锡、硫化铟、硫化锌等。
上述电子传输层的厚度的优选的下限为1nm,优选的上限为200nm。若上述厚度为1nm以上,则变得能够充分地封阻空穴。若上述厚度为200nm以下,则不易成为电子输送时的阻力,能够防止光电转换效率的降低。上述电子传输层的厚度的更优选的下限为3nm,更优选的上限为150nm,进一步优选的下限为5nm,进一步优选的上限为100nm。
制造本发明的太阳能电池的方法没有特别限定,例如可以举出:在基板上形成了电极(阳极)后,通过涂敷等在该电极(阳极)的表面上将空穴传输层制膜,然后,通过旋涂法等印刷法、真空蒸镀法等在该空穴传输层的表面上将光电转换层制膜,然后,根据需要在该光电转换层的表面上将电子传输层制膜,然后,在该电子传输层的表面上形成电极(阴极)的方法等。另外,在基板上形成了电极(阴极)后,可以依次形成电子传输层、光电转换层、空穴传输层、电极(阳极)。
发明效果
根据本发明,能够提供光电转换效率高且耐久性优异的太阳能电池。
具体实施方式
以下,列举实施例对本发明作更详细的说明,但本发明并不仅限于这些实施例。
(实施例1)
在作为透明电极(阴极)的ITO膜的表面上,通过旋涂法将TiO2层制膜而作为电子传输层。接下来,在TiO2层的表面上,通过蒸镀法层叠硫化锑,在所得的由硫化锑形成的层的表面上,通过旋涂法涂布P3HT(Merck公司制,具有在3位具有己基的噻吩骨架的共轭聚合物,具有下述式(5)所表示的构成单元,重均分子量77500)以使膜厚达到10~20nm左右,形成光电转换层。接着,在光电转换层的表面上涂布P3CT(Riekemetals公司制,具有羧基且具有噻吩骨架的共轭聚合物,具有上述式(1)所表示的构成单元,重均分子量20000)以使膜厚达到15nm左右,形成空穴传输层。然后,在空穴传输层的表面上通过蒸镀法层叠金而作为金属电极(阳极),得到太阳能电池。
式(5)中,n表示整数。
(实施例2~9、比较例1~10)
作为空穴传输层的材料、光电转换层的材料而使用表1、2所示的材料,除此以外,与实施例1同样地操作,得到太阳能电池。需要说明的是,以下示出实施例及比较例中使用的材料。
(1)具有羧基且具有共轭结构的有机半导体
·P3CT(Rieke metals公司制,具有羧基且具有噻吩骨架的共轭聚合物,具有上述式(1)所表示的构成单元,重均分子量20000)
·D-149(具有上述式(2)所表示的结构,sigma-aldrich公司制的5-[[4-[4-(2,2-二苯基乙烯基)苯基]-1,2,3-3a,4,8b-六氢环戊二烯并[b]吲哚-7-基]亚甲基]-2-(3-乙基-4-氧代-2-硫代-5-噻唑烷)(5-[[4-[4-(2,2-Diphenylethenyl)phenyl]-1,2,3-3a,4,8b-hexahydrocyclopent[b]indol-7-yl]methylene]-2-(3-ethyl-4-oxo-2-thioxo-5-thiazolid))
·对亚苯基亚乙烯衍生物(具有上述式(3)所表示的构成单元的导入了羧基的对亚苯基亚乙烯衍生物,重均分子量50000)
·酞菁衍生物(具有上述式(4)所表示的结构的导入了羧基的酞菁衍生物)
(2)其他
·P3HT(Merck公司制,具有在3位具有己基的噻吩骨架的共轭聚合物,具有上述式(5)所表示的构成单元,重均分子量77500)
·D-149衍生物(通过水解使D-149的羧基成为酯基而得的产物)
·PEDOT:PSS(聚乙烯二氧噻吩:聚苯乙烯磺酸)
·PE(聚乙烯)
·α-6T(具有下述式(6)所表示的结构的α-六噻吩)
·DPP(具有下述式(7)所表示的结构的3,6-二(2-噻吩基)-2,5-二氢吡咯并[3,4-c]吡咯-1,4-二酮(3,6-Di(2-thienyl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione))
·MK-2(具有下述式(8)所表示的结构的综研化学公司制的有机半导体)
·PCBM(具有下述式(9)所表示的结构的sigma-aldrich公司制的富勒烯衍生物)
<评价>
在实施例及比较例中得到的太阳能电池中,进行以下的评价。将结果示于表1、2。
(1)空穴传输层的制膜性
关于在光电转换层的表面上形成空穴传输层时的制膜性,按照下述的基准进行了评价。
○:无可见程度的不均,得到了均匀的膜
×:发现可见程度的不均,未得到均匀的膜
(2)光电转换效率的测定、及耐久性评价
使用太阳能电池特性评价系统CEP-015(分光计器公司制),测定AM1.5(100mW/cm2)的模拟太阳光照射下的太阳能电池的电流密度电压特性。将实施例1中得到的太阳能电池的电流密度电压特性设为1而进行标准化。
另外,未对太阳能电池进行玻璃密封,测定在温度60℃、湿度30%的条件下经过72小时后的电流密度电压特性,将72小时经过后相对于72小时经过前的电流密度电压特性的值作为耐久性来评价。
(3)综合评价
按照下述的基准进行评价。
○:空穴传输层的制膜性为○,且,光电转换效率为0.8以上,且耐久性为0.6以上
×:空穴传输层的制膜性为×,或者,光电转换效率小于0.8,或者耐久性小于0.6
[表1]
[表2]
产业上的可利用性
根据本发明,能够提供光电转换效率高且耐久性优异的太阳能电池。
Claims (5)
1.一种太阳能电池,其特征在于,
至少具有阴极、阳极、在所述阴极与所述阳极之间配置的光电转换层、以及在所述光电转换层与所述阳极之间配置的空穴传输层,
所述空穴传输层含有具有羧基且具有共轭结构的有机半导体。
2.根据权利要求1所述的太阳能电池,其特征在于,
具有羧基且具有共轭结构的有机半导体为共轭聚合物,且重均分子量为1万~100万。
3.根据权利要求1或2所述的太阳能电池,其特征在于,
具有羧基且具有共轭结构的有机半导体具有选自噻吩骨架、对亚苯基亚乙烯基骨架、乙烯基咔唑骨架、苯胺骨架、乙炔骨架、吡咯骨架、苝骨架、芴骨架、吲哚啉骨架、螺二芴骨架、酞菁骨架及卟啉骨架中的一种以上的骨架。
4.根据权利要求1~3中任一项所述的太阳能电池,其特征在于,
光电转换层包含含有元素周期表15族元素的硫化物的层、和含有有机半导体的层。
5.根据权利要求1~4中任一项所述的太阳能电池,其特征在于,在阴极与光电转换层之间还具有电子传输层。
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