WO2009119871A1 - 有機光電変換素子 - Google Patents
有機光電変換素子 Download PDFInfo
- Publication number
- WO2009119871A1 WO2009119871A1 PCT/JP2009/056425 JP2009056425W WO2009119871A1 WO 2009119871 A1 WO2009119871 A1 WO 2009119871A1 JP 2009056425 W JP2009056425 W JP 2009056425W WO 2009119871 A1 WO2009119871 A1 WO 2009119871A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photoelectric conversion
- anode
- functional layer
- layer
- active layer
- Prior art date
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- XKBGEWXEAPTVCK-UHFFFAOYSA-M methyltrioctylammonium chloride Chemical compound [Cl-].CCCCCCCC[N+](C)(CCCCCCCC)CCCCCCCC XKBGEWXEAPTVCK-UHFFFAOYSA-M 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 125000001792 phenanthrenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 150000004684 trihydrates Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
- H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present invention relates to an organic photoelectric conversion element.
- organic photoelectric conversion elements using light energy organic solar cells, photosensors
- organic photoelectric conversion elements including a functional layer having various functions between the active layer and the electrode are being studied.
- an organic photoelectric conversion element including a functional layer an anode and the functional layer are adjacent to each other, and the functional layer is made of poly (3,4-ethylenedioxythiophene) (PEDOT) and poly (4-1styrenesulfone).
- PEDOT poly (3,4-ethylenedioxythiophene)
- poly (4-1styrenesulfone poly (4-1styrenesulfone.
- a solar cell which is a layer formed using a strongly acidic solution containing (acid) (PSS) is known.
- An object of the present invention is to provide an organic photoelectric conversion element having high photoelectric conversion efficiency.
- the present invention has an anode, a cathode, an active layer, and a functional layer, the anode contains a metal, and the anode Provided is an organic photoelectric conversion element which is adjacent to the functional layer, and wherein the functional layer is formed using a solution having a pH of 5 to 9.
- the organic photoelectric conversion device of the present invention has an anode, a cathode, an active layer, and a functional layer, the anode contains a metal, the anode and the functional layer are adjacent to each other, and a solution having a pH of 5 to 9 is used. Used to form the functional layer.
- the functional layer is preferably adjacent to the active layer on the surface opposite to the surface adjacent to the anode.
- the functional layer of the organic photoelectric conversion element of the present invention is preferably made of a polymer compound, more preferably high conductivity and / or a polymer compound.
- the conductivity of the conductive high polymeric compound is 1 0- 5 ⁇ 1 0 5 SZ cm at normal conductivity, preferably 1 0- 3 ⁇ 1 0 4 SZ cm.
- the solution used for forming the functional layer is a solution containing a material constituting the functional layer and a solvent, and the solution has a pH in the range of 5-9. From the viewpoint of increasing the photoelectric conversion efficiency of the organic photoelectric conversion element, the pH is preferably 6-8.
- the solvent include water and alcohol.
- the alcohol include methanol, ethanol, isopropanol, butanol, ethylene glycol, propylene glycol, butoxyethanol, methoxybutanol and the like.
- the solution may contain two or more of these solvents.
- Examples of the material constituting the functional layer include a high molecular compound containing a thiopheneyl group, a high molecular compound containing an aniline diyl group, and a high molecular compound containing a pentyl diyl group.
- These polymer compounds may have an acid group such as a sulfonic acid group.
- Examples thereof include poly (thiophene) and poly (aline) having an acid group such as a sulfonic acid group as a substituent. ) Is given.
- the poly (thiophene), poly (a-line) may further have a substituent. Examples thereof include a halogen atom, an alkyl group having 1 to 20 carbon atoms, and 1 to 20 carbon atoms.
- the solution includes a dispersion system such as emulsion (emulsion) or suspension (suspension).
- the pH of the solution is measured using a pH test paper.
- the functional layer has the following functions: a function of increasing the hole injection efficiency into the anode, a function of preventing the injection of electrons from the active layer, a function of increasing the hole transport ability, and flatness when depositing the anode Functions to protect the active layer from erosion of the solvent when the anode is produced by a coating method, a function to reflect light incident from the cathode, and a function to suppress degradation of the active layer.
- the anode which the organic photoelectric conversion element of this invention has contains a metal.
- the anode may contain a metal oxide and a metal halide, but when the weight of the metal is 100, the sum of the weight of the metal oxide and the weight of the metal halide is It is preferable that it is 10 or less, and it is more preferable that the anode consists essentially of metal.
- metals include lithium, beryllium, sodium, magnesium, aluminum, potassium, chanoleum, scandium, titanium, vanadium, chromium, Manganese, iron, cobalt, nickel, copper, zinc, gallium, germanium, rubidium, strontium, yttrium, zirconium, niobium, molypden, ruthenium, rhodium, palladium, silver, force donium, indium, tin, thymon, cesium, Examples include barium, lanthanum, hafnium, tantanore, tungsten, rhenium, osmium, iridium, platinum, gold, mercury, thallium, lead, bismuth, and lantern.
- An alloy of these metals, graphite, or an intercalation compound between these metals and graphite can also be used.
- metals aluminum elm, magnesium, titanium, chromium, iron, nickel, copper, zinc, gallium, zirconium, molybdenum, silver, indium, and tin are preferable, and aluminum is more preferable from the viewpoint of manufacturing cost.
- An organic photoelectric conversion element comprising: a second active layer containing a compound; and a functional layer provided adjacent to the anode between the anode and the second active layer;
- an organic photoelectric conversion element having a functional layer provided;
- an organic photoelectric conversion element having a functional layer provided adjacent to the organic photoelectric conversion element, wherein the electron-accepting compound is a fullerene derivative
- the fullerene derivative and the electron donating property are obtained.
- the proportion of the fullerene derivative in the active layer containing the compound is preferably 10 to 100 parts by weight with respect to 100 parts by weight of the electron donating compound, More preferred are parts by weight.
- As the organic photoelectric conversion element 2 or 3 is preferable, and 3 is more preferable from the viewpoint of including many heterojunction interfaces.
- an additional layer may be provided. Examples of the additional layer include a charge transport layer that transports holes or electrons, and a buffer layer. The buffer layer is provided, for example, between the cathode and the active layer.
- the electron-accepting compound suitably used for the organic photoelectric conversion element has a higher H OMO energy of the electron-accepting compound than that of the electron-donating compound, and the L UMO energy of the electron-accepting compound provides an electron donation. It is higher than the L UMO energy of a sex compound.
- the organic photoelectric conversion element of the present invention is usually formed on a substrate.
- This substrate may be any substrate that does not change when the electrode is formed and the organic layer is formed.
- the material for the substrate include glass, plastic, polymer film, and silicon.
- the opposite electrode ie, the electrode farther away from the substrate
- the cathode material is preferably transparent or translucent.
- the cathode material include a conductive metal oxide film and a translucent metal thin film.
- Specific examples of cathode materials include indium oxide, zinc oxide, tin oxide, and composite materials such as tin, tin, oxide (ITO), indium, zinc oxide, etc.
- Electrode production methods include vacuum deposition, sputtering, ion plating, and plating. Etc.
- a metal electrode can be produced by forming a translucent metal thin film by a coating method using a metal ink, a metal paste, a low melting point metal, or the like.
- an electron donating compound and an electron accepting compound described later can be used, respectively.
- a material used for the buffer layer as an additional layer when the buffer layer is provided between the negative electrode and the active layer, for example, alkali metal such as lithium fluoride, halide of alkaline earth metal, etc. Fine particles of inorganic semiconductors such as oxides and titanium oxides can be used.
- the electron donating compound may be a low molecular compound or a high molecular compound.
- Examples of the low molecular weight compound include phthalocyanine, metal phthalocyanine, vorphyrin, metalloporphyrin, oligothiophene, tetracene, pentacene, rubrene and the like.
- Examples of polymer compounds include polyvinylcarbazole and Derivatives thereof, polysilanes and derivatives thereof, polycyclohexane derivatives having aromatic amines in the side chain or main chain, polyayurin and derivatives thereof, polythiophene and derivatives thereof, polypyrrole and derivatives thereof, polyphenylene-biylene and derivatives thereof, And polyphenylene vinylene and derivatives thereof, and polyfluorene and derivatives thereof.
- the electron accepting compound may be a low molecular compound or a high molecular compound.
- low molecular weight compounds include oxadiazole derivatives, anthraquinodimethane and its derivatives, benzoquinone and its derivatives, naphthoquinone and its derivatives, anthraquinone and its derivatives, tetracyananthraquinodimethane and its derivatives, fluorenone derivatives, Diphenyldisyanoethylene and its derivatives, diphenoquinone derivatives, metal complexes of 8-hydroxyquinoline and its derivatives, polyquinoline and its derivatives, polyquinoxaline and its derivatives, polyfluorene and its derivatives, C 6 .
- polymer compound examples include polybulur rubazole and derivatives thereof, polysilane and derivatives thereof, polysiloxane derivatives having aromatic amines in the side chain or main chain, polyarine and derivatives thereof, polythiophene and derivatives thereof, Polypyrrole and its derivatives, Polyphenylene vinylene and its derivatives, Polyethylene vinylene and its derivatives, Polyfluorene and its derivatives, and the like.
- fullerene and its derivatives are preferable.
- fullerenes include fullerenes such as c 60 and C 70 N carbon nanotubes, and derivatives thereof.
- fullerene derivatives include the following.
- the active layer of the organic photoelectric conversion element of the present invention preferably contains a polymer compound, and may contain one polymer compound alone or two or more in combination. In order to improve the charge transport property of the active layer, the active layer may further contain an electroenhancing compound and / or an electron accepting compound.
- the active layer preferably contains a conjugated polymer compound and a fullerene derivative.
- the conjugated polymer compound include a polymer compound having a fluorenediyl group and a polymer compound having a thiopheneyl group.
- the organic thin film has a thickness of usually 1 nm to: 100 ⁇ m, preferably 2 n n! ⁇ 10 00 nm, more preferably 5 nm to 500 nm, and even more preferably 20 nm to 200 nm.
- Examples of the method for producing the functional layer include a method by film formation from the solution.
- the method for producing an organic thin film used for the active layer include a method of forming a film from a composition containing a solvent, a conjugated polymer compound, and a fullerene derivative.
- the same method as described in the method for producing the functional layer can be used.
- solvents used to form an active layer from a solution include hydrocarbons such as toluene, xylene, mesitylene, tetralin, decalin, bicyclohexyl, ⁇ -butylbenzene, s-butylbesen, and t_butylbenzene.
- Solvents such as carbon tetrachloride, chlorophonolem, dichloromethane, dichloro: r tan, chlorobutane, promobutane, black mouth pentane, bromo pentane, throat hexane, bromo hexane, chloro mouth hexane, promo mouth hexane, etc.
- Halogenated saturated hydrocarbon solvents such as chlorobenzene, dichlorobenzene and trichlorobenzene, and ether solvents such as tetrahydrofuran and tetrahydropyran.
- the organic photoelectric conversion element of the present invention irradiates light such as sunlight from a transparent or translucent electrode By doing so, a photovoltaic force is generated between the electrodes, and it can be operated as an organic thin film solar cell.
- Example 1 By irradiating light from a transparent or translucent electrode with a voltage applied between the electrodes, a photocurrent flows and can be operated as an organic photosensor. It can also be used as an organic image sensor by integrating multiple organic light sensors.
- the polystyrene-equivalent number average molecular weight and weight average data of the polymer were determined using GPC (PL-GPC 2000) manufactured by GPC Laboratory.
- the polymer was dissolved in o-dichlorobenzene to a concentration of about 1% by weight.
- As the mobile phase of GPC. -Dichloromethane was used and flowed at a measurement temperature of 140 ° C at a flow rate of 1 mLZ.
- As the column a column in which three PLGEL 10 ⁇ m M I XED-B (PL Laboratory) were connected in series was used.
- dichlorobis (triphenylphosphine) palladium (II) 0.02 g
- the temperature was raised to 105 ° C.
- 42.2 ml of a 2 mol / L sodium carbonate aqueous solution was added dropwise with stirring.
- the reaction was allowed to proceed for 5 hours, and phenylboronic acid (2.6 g) and 1.8 ml of toluene were added, followed by stirring at 105 ° C for 16 hours.
- 700 ml of toluene and 200 ml of 7.5% aqueous solution of sodium diethyldicarbamate trihydrate were added thereto, followed by stirring at 85 ° C for 3 hours.
- the aqueous layer is removed from the reaction solution to obtain an organic layer, which is then washed twice with 30 ° C ion-exchanged water at 30 ° C, once with 300 ml of 3% acetic acid at 60 ° C, and further at 60 ° C for ion exchange. Washed 3 times with 300 ml of water.
- the organic layer was passed through a column filled with celite, alumina, and silica, and the column was washed with 800 ml of hot toluene.
- the resulting solution was concentrated to 700 ml, poured into 2 L of methanol and reprecipitated to obtain a polymer.
- the polymer was recovered by filtration and washed with 500 ml of methanol, acetone, methanol.
- polymer 1 a pentacene fluorene copolymer represented by the following formula (hereinafter referred to as “polymer 1”) was obtained.
- the number average molecular weight in terms of polystyrene of the polymer 1 was 5.4 ⁇ 10 0, and the weight average molecular weight was 1.1 ⁇ 10 5 .
- the composition 1 was applied by spin coating to a glass substrate on which an ITO film having a thickness of 150 ⁇ was applied as a cathode by a sputtering method to obtain an active layer (film thickness of about 100 nm) of an organic thin film solar cell. Thereafter, a HIL 691 solution (product name: Plexcore HI L691 manufactured by Plextronics) was applied by spin coating to obtain a hole transport layer (film thickness of about 50 nm) as a functional layer. When the pH of the HIL 691 solution was measured with a pH test paper (trade name “UN IV Universal”, model number “07011030” manufactured by Advantech Toyo Co., Ltd.), the pH was 7.
- a 1 was deposited as an anode by a vacuum deposition apparatus so that the thickness was 100 nm.
- the degree of vacuum in vapor deposition were all 1 ⁇ 9 X 10- 3 P a.
- One side of the functional layer is adjacent to the anode, and the other side is adjacent to the “active” 1 to raw layer.
- the shape of the obtained organic thin film solar cell was a regular square of 2 mm ⁇ 2 mm.
- the photoelectric conversion efficiency of the obtained organic thin-film solar cell is irradiated with constant light using a solar simulator (trade name 0TENT0-SUNII: AMI.5G filter, irradiance 100 mW / cm 2 , manufactured by Spectrometer Co., Ltd.). And the voltage was measured. The photoelectric conversion efficiency was 1.3%.
- a solar simulator trade name 0TENT0-SUNII: AMI.5G filter, irradiance 100 mW / cm 2 , manufactured by Spectrometer Co., Ltd.
- Li F was vapor-deposited to a thickness of 4 nm by a vacuum evaporation machine on a glass substrate with a 150 nm thick ITO film as a cathode by sputtering. Thereafter, the composition 1 was applied onto the substrate by spin coating to obtain an active layer (film thickness of about 100 nm) of the organic thin film solar cell. Thereafter, a HIL 691 solution (P 1 extronics, product name: P 1 excore HIL 691) was applied by spin coating to obtain a hole transport layer (film thickness of about 50 nm) as a functional layer. Thereafter, drying was performed at room temperature in a vacuum for 60 minutes.
- a 1 was deposited as an anode by a vacuum deposition machine so as to have a thickness of 100 nm.
- the degree of vacuum at the time of vapor deposition was all 1 to 9 X 10 0 3 Pa.
- One side of the functional layer is adjacent to the anode and the other side is adjacent to the active layer.
- the shape of the obtained organic thin film solar cell was a regular square of 2 mm ⁇ 2 mm.
- the organic thin-film solar cells obtained were irradiated with constant light using a solar simulator (trade name 0TENT0-SUNII: AMI.5G filter, irradiance lOOmff m 2 , manufactured by Spectrometer Co., Ltd.). The generated current and voltage were measured. The photoelectric conversion efficiency was 2.0%.
- a solution obtained by diluting titayusol (PASOL HPW-1 OR, manufactured by Catalytic Chemical Industry Co., Ltd.) with water four times by spin coating is applied to a glass substrate with an ITO film with a thickness of 15 Onm as the cathode by sputtering. As a result, an electron transport layer (film thickness of about 20 nm) was obtained. Thereafter, the composition 1 was applied by spin coating to obtain an active layer (film thickness: about 100 nm). Thereafter, an HI L 691 solution (manufactured by P1ex tronics, trade name P1ex col HI HI 691) was applied by spin coating to obtain a hole transport layer (film thickness of about 11 O nm) as a functional layer.
- P1ex tronics trade name P1ex col HI HI 691
- a 1 was deposited as an anode by a vacuum deposition apparatus so that the thickness was 100 nm.
- the degree of vacuum in vapor deposition, all with 1 to 9 X 10 - was 3 P a.
- One side of the functional layer is adjacent to the anode and the other side is adjacent to the active layer.
- the shape of the obtained organic thin film solar cell is 2mmX2mm positive It was a rectangle.
- Photoelectric conversion efficiency of the organic thin-film solar cells obtained is generated by irradiating with constant light using a solar simulator (trade name 0TENT0-SUNII: AMI. 5 G filter, irradiance 100 mW / cm 2 ). The voltage was measured. The photoelectric conversion efficiency was 2.4%.
- a solar simulator trade name 0TENT0-SUNII: AMI. 5 G filter, irradiance 100 mW / cm 2 . The voltage was measured. The photoelectric conversion efficiency was 2.4%.
- the composition 1 was applied by spin coating to a glass substrate with a 150 nm-thick ITO film as a cathode by sputtering to obtain an active layer (film thickness of about 100 nm) of an organic thin-film solar cell .
- an OC 1200 solution (P1 extronics, trade name Plexcore OC 1200, purchased from Sigma Aldrich) was applied by spin coating to obtain a hole transport layer (film thickness of about 50 nm) as a functional layer. It was.
- a pH test paper trade name “UN IV Universal”, model number “0701 1030” manufactured by Adpantech Toyo Co., Ltd.
- A1 was vapor-deposited as an anode with a vacuum vapor deposition machine so that thickness might be set to 100 nm.
- the degree of vacuum at the time of deposition was 1 to 9 ⁇ 10 3 Pa.
- One side of the functional layer is adjacent to the anode and the other side is adjacent to the active layer.
- the shape of the obtained organic thin-film solar cell was a regular square of 2 mm ⁇ 2 mm.
- Photoelectric conversion efficiency of the obtained organic thin-film solar cells is generated by irradiating with constant light using a solar simulator (trade name 0TENT0-SUNII: AMI.5 G filter, irradiance lOOmW m 2 ). Current and voltage were measured. The photoelectric conversion efficiency was 1.1%.
- Plexcore OC 1200 is a solution of 2% ethylene glycol monobutyl ether / water, 3: 2, in the following Su / Rehon ⁇ ⁇ polythiophene.
- a solution obtained by diluting titayusol (Catalytic Chemical Industry Co., Ltd. PASOL HPW-10R) with water four times by spin coating is applied to a glass substrate with a 150 nm-thick ITO film as a cathode by sputtering. As a result, an electron transport layer (film thickness of about 20 nm) was obtained. Thereafter, the composition 1 was applied by spin coating to obtain an active layer (film thickness: about 100 nm). After that, OC 1200 solution (P1 extronics, trade name Plexcore OC 1200, purchased from Sigma Aldrich) was applied by spin coating to obtain a hole transport layer (film thickness of about 50 nm) as a functional layer. .
- a 1 was deposited as an anode by a vacuum deposition apparatus so that the thickness was 100 nm.
- the degree of vacuum during the deposition was all l-9 X l (T 3 Pa.
- One side of the functional layer was adjacent to the anode and the other side was active.
- the shape of the obtained organic thin film solar cell was a regular square of 2 mm ⁇ 2 mm.
- the photoelectric conversion efficiency of the obtained organic thin-film solar cell is measured by using a solar simulator (trade name: 0TENT0-SUNII: AMI.5G filter, irradiance: 100 mW / cm 2 ) to generate a certain amount of light. Was measured. The photoelectric conversion efficiency was 2.7%. Comparative Example 1
- a 1 was deposited as an anode by a vacuum deposition machine so as to have a thickness of 100 nm.
- the degree of vacuum at the time of vapor deposition was 1 to 9 ⁇ 10 3 Pa.
- the shape of the obtained organic thin-film solar cell was a regular square of 2 mm ⁇ 2 mm.
- Photoelectric conversion efficiency of the obtained organic thin-film solar cell is generated by irradiating constant light using a solar simulator (product name: 0TENT0-SUNII: AMI.5G filter, irradiance: lOOmW m 2 , manufactured by Spectrometer) Current and voltage were measured. The photoelectric conversion efficiency was 0.0%. Comparative Example 2
- Li F was vapor-deposited to a thickness of 4 nm by a vacuum vapor deposition machine on a glass substrate with a 15 Onm thick ITO film as a cathode by sputtering. Thereafter, the composition 1 was applied onto the substrate by spin coating to obtain an active layer (film thickness of about 100 nm) of the organic thin film solar cell. Then, PEDOT: PSS solution (trade name: C LEV I OS AI 4083 N Eichi 'made by Starck Co., Ltd.) was more applied to spin coating to obtain a functional layer (with a thickness of about 5 O nm). Thereafter, drying was performed in vacuum at room temperature for 60 minutes.
- a 1 was deposited as an anode by a vacuum deposition machine so as to have a thickness of 100 nm.
- the degree of vacuum in vapor deposition was filed in every 1 ⁇ 9 X 10- 3 P a.
- the shape of the obtained organic thin film solar cell was a regular square of 2 mm ⁇ 2 mm.
- the photoelectric conversion efficiency of the obtained organic thin-film solar cell is irradiated with constant light using a solar simulator (product name: 0TENT0-SUNII: AMI.5G filter, irradiance lOOmW m 2 , manufactured by Spectrometer Co., Ltd.). And the voltage was measured.
- the photoelectric conversion efficiency was 0.0% Comparative Example 3
- a glass substrate with a 150 nm ITO film attached as a cathode by sputtering is spin-coated with a solution obtained by diluting titania sol (PASOL HPW-1 OR, manufactured by Catalytic Hihi Kogyo Co., Ltd.) 4 times with water. This was applied to obtain an electron transport layer (film thickness of about 20 nm). Thereafter, the composition 1 was applied by spin coating to obtain an active layer (film thickness: about 100 nm). Thereafter, a PEDOT: PSS solution (trade name: CLEV IOSAI 4083, manufactured by Hichi Starck Co., Ltd.) was applied by spin coating to obtain a functional layer (film thickness of about 50 nm).
- PASOL HPW-1 OR manufactured by Catalytic Hihi Kogyo Co., Ltd.
- a 1 was deposited as an anode by a vacuum deposition machine so that the thickness was lOOnm.
- the degree of vacuum at the time of vapor deposition was all 1-9 X 1 Or 3 Pa.
- the shape of the obtained organic thin-film solar cell was a regular square of 2 mm ⁇ 2 mm.
- the photoelectric conversion efficiency of the obtained organic thin-film solar cell is measured by using a solar simulator (trade name: 0TENT0-SUNII: AMI.5G filter, irradiance: lOOmW m 2 ) to generate a certain amount of light. Was measured. The photoelectric conversion efficiency was 0.0%.
- a solar simulator trade name: 0TENT0-SUNII: AMI.5G filter, irradiance: lOOmW m 2
- the organic photoelectric conversion element of the present invention exhibits high photoelectric conversion efficiency, the present invention is extremely useful industrially.
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Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09724867A EP2259357A4 (en) | 2008-03-25 | 2009-03-24 | ORGANIC PHOTOELECTRIC CONVERSION ELEMENT |
CN200980110177.4A CN101978525A (zh) | 2008-03-25 | 2009-03-24 | 有机光电转换元件 |
US12/933,613 US20110005598A1 (en) | 2008-03-25 | 2009-03-24 | Organic photoelectric conversion element |
US13/611,307 US20130005072A1 (en) | 2008-03-25 | 2012-09-12 | Process for producing an organic photoelectric conversion element |
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JP2008077979 | 2008-03-25 | ||
JP2008-077979 | 2008-03-25 | ||
JP2008133905 | 2008-05-22 | ||
JP2008-133905 | 2008-05-22 | ||
JP2009-022371 | 2009-02-03 | ||
JP2009022371 | 2009-02-03 |
Related Child Applications (1)
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US13/611,307 Continuation US20130005072A1 (en) | 2008-03-25 | 2012-09-12 | Process for producing an organic photoelectric conversion element |
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WO2009119871A1 true WO2009119871A1 (ja) | 2009-10-01 |
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PCT/JP2009/056425 WO2009119871A1 (ja) | 2008-03-25 | 2009-03-24 | 有機光電変換素子 |
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US (2) | US20110005598A1 (ja) |
EP (1) | EP2259357A4 (ja) |
JP (1) | JP2010206146A (ja) |
KR (1) | KR20110008187A (ja) |
CN (1) | CN101978525A (ja) |
WO (1) | WO2009119871A1 (ja) |
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JP2016167555A (ja) * | 2015-03-10 | 2016-09-15 | 株式会社東芝 | 光電変換素子および太陽電池 |
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CN103460426A (zh) * | 2011-03-29 | 2013-12-18 | 住友化学株式会社 | 有机光电转换元件的制造方法 |
JP2015532524A (ja) * | 2012-09-28 | 2015-11-09 | オーシャンズ キング ライティング サイエンスアンドテクノロジー カンパニー リミテッド | ポリマー太陽電池及びその製造方法 |
JP5688442B2 (ja) * | 2012-11-09 | 2015-03-25 | 積水化学工業株式会社 | 太陽電池 |
US9225023B2 (en) | 2013-10-04 | 2015-12-29 | Toyota Motor Engineering & Manufacturing North America, Inc. | Fullerenes as high capacity cathode materials for a rechargeable magnesium battery |
CN107210371A (zh) * | 2015-01-22 | 2017-09-26 | 住友化学株式会社 | 光电转换元件及其制造方法 |
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KR20110008187A (ko) | 2011-01-26 |
US20110005598A1 (en) | 2011-01-13 |
EP2259357A4 (en) | 2012-02-01 |
EP2259357A1 (en) | 2010-12-08 |
CN101978525A (zh) | 2011-02-16 |
US20130005072A1 (en) | 2013-01-03 |
JP2010206146A (ja) | 2010-09-16 |
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