TW201412907A - Cmp用研磨液、儲存液及研磨方法 - Google Patents
Cmp用研磨液、儲存液及研磨方法 Download PDFInfo
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- TW201412907A TW201412907A TW102124227A TW102124227A TW201412907A TW 201412907 A TW201412907 A TW 201412907A TW 102124227 A TW102124227 A TW 102124227A TW 102124227 A TW102124227 A TW 102124227A TW 201412907 A TW201412907 A TW 201412907A
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- Prior art keywords
- polishing
- cmp
- cerium oxide
- polishing liquid
- metal
- Prior art date
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- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- DHCDFWKWKRSZHF-UHFFFAOYSA-N sulfurothioic S-acid Chemical compound OS(O)(=O)=S DHCDFWKWKRSZHF-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- YIBXWXOYFGZLRU-UHFFFAOYSA-N syringic aldehyde Natural products CC12CCC(C3(CCC(=O)C(C)(C)C3CC=3)C)C=3C1(C)CCC2C1COC(C)(C)C(O)C(O)C1 YIBXWXOYFGZLRU-UHFFFAOYSA-N 0.000 description 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 description 1
- 150000003536 tetrazoles Chemical group 0.000 description 1
- QERYCTSHXKAMIS-UHFFFAOYSA-N thiophene-2-carboxylic acid Chemical compound OC(=O)C1=CC=CS1 QERYCTSHXKAMIS-UHFFFAOYSA-N 0.000 description 1
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical class SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 1
- 229940006280 thiosulfate ion Drugs 0.000 description 1
- DHCDFWKWKRSZHF-UHFFFAOYSA-L thiosulfate(2-) Chemical compound [O-]S([S-])(=O)=O DHCDFWKWKRSZHF-UHFFFAOYSA-L 0.000 description 1
- ODBLHEXUDAPZAU-UHFFFAOYSA-N threo-D-isocitric acid Natural products OC(=O)C(O)C(C(O)=O)CC(O)=O ODBLHEXUDAPZAU-UHFFFAOYSA-N 0.000 description 1
- UIERETOOQGIECD-ONEGZZNKSA-N tiglic acid Chemical compound C\C=C(/C)C(O)=O UIERETOOQGIECD-ONEGZZNKSA-N 0.000 description 1
- UAXOELSVPTZZQG-UHFFFAOYSA-N tiglic acid Natural products CC(C)=C(C)C(O)=O UAXOELSVPTZZQG-UHFFFAOYSA-N 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- FGMPLJWBKKVCDB-UHFFFAOYSA-N trans-L-hydroxy-proline Natural products ON1CCCC1C(O)=O FGMPLJWBKKVCDB-UHFFFAOYSA-N 0.000 description 1
- GTZCVFVGUGFEME-UHFFFAOYSA-N trans-aconitic acid Natural products OC(=O)CC(C(O)=O)=CC(O)=O GTZCVFVGUGFEME-UHFFFAOYSA-N 0.000 description 1
- FLNRHACWTVIBQS-UHFFFAOYSA-N triphenyl(prop-2-enyl)phosphanium Chemical class C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CC=C)C1=CC=CC=C1 FLNRHACWTVIBQS-UHFFFAOYSA-N 0.000 description 1
- PXIMQGSMXJFQOF-UHFFFAOYSA-N triphenyl(propan-2-yl)phosphanium Chemical class C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(C(C)C)C1=CC=CC=C1 PXIMQGSMXJFQOF-UHFFFAOYSA-N 0.000 description 1
- MSXNDXIAUQJHNS-UHFFFAOYSA-N triphenyl(propyl)phosphanium Chemical class C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCC)C1=CC=CC=C1 MSXNDXIAUQJHNS-UHFFFAOYSA-N 0.000 description 1
- HXWNEEZPMZTSBJ-UHFFFAOYSA-N triphenyl(tetradecyl)phosphanium Chemical class C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCCCCCCCCCCCCC)C1=CC=CC=C1 HXWNEEZPMZTSBJ-UHFFFAOYSA-N 0.000 description 1
- UNXRWKVEANCORM-UHFFFAOYSA-N triphosphoric acid Chemical compound OP(O)(=O)OP(O)(=O)OP(O)(O)=O UNXRWKVEANCORM-UHFFFAOYSA-N 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
- WQEVDHBJGNOKKO-UHFFFAOYSA-K vanadic acid Chemical compound O[V](O)(O)=O WQEVDHBJGNOKKO-UHFFFAOYSA-K 0.000 description 1
- WKOLLVMJNQIZCI-UHFFFAOYSA-N vanillic acid Chemical compound COC1=CC(C(O)=O)=CC=C1O WKOLLVMJNQIZCI-UHFFFAOYSA-N 0.000 description 1
- TUUBOHWZSQXCSW-UHFFFAOYSA-N vanillic acid Natural products COC1=CC(O)=CC(C(O)=O)=C1 TUUBOHWZSQXCSW-UHFFFAOYSA-N 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012152543 | 2012-07-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201412907A true TW201412907A (zh) | 2014-04-01 |
Family
ID=49881822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102124227A TW201412907A (zh) | 2012-07-06 | 2013-07-05 | Cmp用研磨液、儲存液及研磨方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2014007063A1 (ja) |
| TW (1) | TW201412907A (ja) |
| WO (1) | WO2014007063A1 (ja) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10283373B2 (en) | 2014-07-09 | 2019-05-07 | Hitachi Chemical Company, Ltd. | CMP polishing liquid and polishing method |
| TWI701322B (zh) * | 2015-09-30 | 2020-08-11 | 日商福吉米股份有限公司 | 研磨用組成物 |
| TWI795521B (zh) * | 2018-02-05 | 2023-03-11 | 日商Ｊｓｒ股份有限公司 | 化學機械研磨用組成物及研磨方法 |
| TWI811046B (zh) * | 2018-03-28 | 2023-08-01 | 美商富士軟片平面解決方案有限責任公司 | 釕材之化學機械研磨組成物 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015189965A (ja) * | 2014-03-31 | 2015-11-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP2017122134A (ja) * | 2014-05-22 | 2017-07-13 | 日立化成株式会社 | 金属膜用研磨液及びそれを用いた研磨方法 |
| JP6564638B2 (ja) * | 2015-07-15 | 2019-08-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物、磁気ディスク基板製造方法および磁気ディスク基板 |
| EP3334794B1 (en) * | 2015-08-12 | 2020-02-19 | Basf Se | Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt comprising substrates |
| JP6656867B2 (ja) * | 2015-09-30 | 2020-03-04 | 株式会社フジミインコーポレーテッド | 磁気ディスク基板用研磨組成物、磁気ディスク基板の製造方法および磁気ディスク基板 |
| US9528030B1 (en) * | 2015-10-21 | 2016-12-27 | Cabot Microelectronics Corporation | Cobalt inhibitor combination for improved dishing |
| WO2019189610A1 (ja) * | 2018-03-30 | 2019-10-03 | 日揮触媒化成株式会社 | シリカ粒子分散液、研磨組成物及びシリカ粒子分散液の製造方法 |
| JP7435739B2 (ja) * | 2020-11-17 | 2024-02-21 | 株式会社レゾナック | 研磨剤、複数液式研磨剤及び研磨方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007227670A (ja) * | 2006-02-23 | 2007-09-06 | Fujifilm Corp | 化学的機械的研磨方法 |
| US9129907B2 (en) * | 2006-09-08 | 2015-09-08 | Cabot Microelectronics Corporation | Onium-containing CMP compositions and methods of use thereof |
| JP5493526B2 (ja) * | 2009-07-14 | 2014-05-14 | 日立化成株式会社 | Ｃｍｐ用研磨液及び研磨方法 |
| KR101330956B1 (ko) * | 2009-08-19 | 2013-11-18 | 히타치가세이가부시끼가이샤 | Ｃｍｐ 연마액 및 연마 방법 |
-
2013
- 2013-06-19 JP JP2014523666A patent/JPWO2014007063A1/ja active Pending
- 2013-06-19 WO PCT/JP2013/066862 patent/WO2014007063A1/ja active Application Filing
- 2013-07-05 TW TW102124227A patent/TW201412907A/zh unknown
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10283373B2 (en) | 2014-07-09 | 2019-05-07 | Hitachi Chemical Company, Ltd. | CMP polishing liquid and polishing method |
| TWI723710B (zh) * | 2014-07-09 | 2021-04-01 | 日商昭和電工材料股份有限公司 | Cmp用研磨液及研磨方法 |
| TWI701322B (zh) * | 2015-09-30 | 2020-08-11 | 日商福吉米股份有限公司 | 研磨用組成物 |
| TWI795521B (zh) * | 2018-02-05 | 2023-03-11 | 日商Ｊｓｒ股份有限公司 | 化學機械研磨用組成物及研磨方法 |
| TWI811046B (zh) * | 2018-03-28 | 2023-08-01 | 美商富士軟片平面解決方案有限責任公司 | 釕材之化學機械研磨組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2014007063A1 (ja) | 2016-06-02 |
| WO2014007063A1 (ja) | 2014-01-09 |
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