TW201408409A - 用於在基板上分配無焊劑焊料的方法和設備 - Google Patents
用於在基板上分配無焊劑焊料的方法和設備 Download PDFInfo
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Abstract
用於在基板上分配無焊劑焊料的方法和設備,設備包括具有衝壓部(5)的分配頭(2),能將超音波施加到衝壓部(5)。藉由下列步驟分配焊料:A)將分配頭(2)移動至下一個基板場所上方;B)使該衝壓部(5)下降直至衝壓部(5)的工作面(11)接觸基板場所或位於基板場所上方的預定高度處;C)藉由下列步驟分配焊料:C1)使焊絲(8)前進直至焊絲(8)接觸基板場所,其方式使得焊絲(8)的尖端接觸位於衝壓部(5)的凹部(12)內的基板場所;C2)使焊絲(8)進一步前進以熔化預定量的焊料;和C3)縮回該焊絲(8);D)移動分配頭(2)以在基板場所上散佈焊料,並且同時對衝壓部(5)施加超音波;和E)提升衝壓部(5)。
Description
本發明涉及用於在基板上分配無焊劑焊料的方法和設備。
這種焊接方法通常但並不唯一地用於將半導體晶片安裝在稱之為引線框架的金屬基板上。與利用粘合劑進行安裝相比,功率半導體器件通常主要利用軟焊料與基板相連接,基板通常由銅組成,以便確保半導體晶片的熱損失透過焊接接頭更有效地散發。尤其是在功率密度增加的情況下,對焊接接頭的同質性的要求較高,即,要求焊料層在整個晶片區域上有限定的厚度、均勻的分佈和理想的浸濕以及完全沒有氣泡和焊接接頭的純度。另一方面,焊料必須不能橫向地滲出焊接間隙,並且不能緊接於半導體晶片散佈,這就再次要求對焊料部分的精確定量和定位。
在安裝半導體晶片的領域中,在實際使用中廣泛應用的一種方法是,將焊絲的端部接觸已經被加熱至焊料熔化溫度以上的基板,以便熔化一部分焊絲。由於其簡便且靈活,這種方法一般非常適於大量生產。然而,所
獲得的近似圓形的浸濕表面並不理想地適於矩形或方形的半導體晶片。此外,借助從美國專利US6,056,184獲知的一種落料模(punching die),可將沉積在基板上的焊料部分製成一種適於矩形半導體晶片的平坦形狀。還獲知的是,用寫頭(writing head)沿著特定路徑移動焊接金屬絲的端部,使得受熱的基板持續熔化焊料。焊料軌跡從而沉積在基板上。
從US5,878,939獲知一種方法,其中可將液態焊料注射進形成在成型模和基板之間的空腔中。
這些已知的方法具有幾個缺點。或者所沉積焊料的形狀為圓形,或者必須為每個矩形制出特定的落料模。這樣的落料模包括側壁,該側壁將佔據基板的一部分。因此,焊料不能被施加到晶片島的邊緣,該晶片島容納半導體晶片。另外,基板必須被加熱到焊料的熔化溫度之上,並且所沉積的焊料從施加開始直到沉積到半導體晶片上必須保持在液態。另外的缺點是,必須定期地清洗與液態焊料相接觸的部位,為此目的就必須中斷生產。
從美國專利US4,577,398和美國專利US4,709,849中獲知一種方法,在該方法中預製由焊接金屬製成的扁平預成型坯(所謂的“焊料預成型坯”),這種坯的尺寸適用於半導體晶片。焊料預成形坯隨後會被放置在基板上並且被基板熔化,以便形成具有所需尺寸的焊接層。由於對焊料預成型坯的必要預製以及額外的安裝操作,這種方法相對昂貴並且不靈活。
從US2009-145950獲知藉由焊料分配器的寫頭引導焊絲的方法和設備,當施加焊料時,將焊絲與受熱的基
板相接觸,使得焊料在焊絲的端部處熔化,並且寫頭沿著平行於基板的表面的預定路徑移動。焊料分配器以這種方式在基板上寫出焊料軌跡。這種方法中的缺點是,基板僅能被不充分地浸濕,而未預先清洗。
本發明的目的是開發不再表現出上述缺點的用於對基板施加無焊劑焊料的方法和設備。
根據本發明的用於將無焊劑焊料分配到基板的基板場所上的方法使用包括分配頭的分配設備,該分配頭包括衝壓部、超音波頭以及絲饋送部,超音波頭被構造成將超音波施加到衝壓部。該衝壓部具有工作面,該工作面具有對衝壓部的側表面開放的凹部。該絲饋送部在相對於基板的表面傾斜一角度的情況下饋送焊絲。該方法包括下列步驟:A)將分配頭移動至在焊料將被分配到的下一個基板場所的上方的預定位置;B)將衝壓部下降直至B1)衝壓部的工作面接觸基板場所,或B2)衝壓部的工作面位於該基板場所上方的預定高度處,或B3)衝壓部的工作面接觸基板場所,並且將衝壓部提升至基板場所上方的預定高度,其中,在B2和B3中所提及的高度被以如下方式設定,所述方式使得衝壓部的工作面在稍後的下列步驟D中被焊料潤濕,
C)藉由下列步驟將無焊劑焊料分配到基板場所:C1)使焊絲以如下方式前進直至焊絲接觸基板場所,所述方式使得該焊絲的尖端接觸位於衝壓部的凹部內的基板場所;C2)使焊絲進一步前進,以便熔化預定量的焊料;以及C3)縮回焊絲;D)沿著預定路徑移動分配頭以便在基板場所上分配焊料,並且同時對衝壓部施加超音波;以及E)提升衝壓部,其中在步驟C3之後執行步驟D,或者在步驟C2期間步驟D已經開始。
該方法較佳地係進一步包括:透過噴嘴饋送焊絲,並且主動地冷卻噴嘴。
根據本發明,用於將無焊劑焊料分配到基板的基板場所上的設備包括:分配頭,該分配頭在兩個水準方向上可移動,並且,可選擇地,該分配頭在豎直方向上可移動,該分配頭包括超音波頭;衝壓部,該衝壓部具有工作面,該工作面具有朝該衝壓部的側表面開放的凹部,其中該衝壓部能夠固定在該超音波頭上;絲饋送部,該絲饋送部具有噴嘴,該噴嘴具有縱向鑽孔,透過該縱向鑽孔能夠引導焊絲,其中該絲饋
送部的延伸穿過該噴嘴的該縱向鑽孔的縱向軸線在該衝壓部的該側表面處進入到該凹部中,並且在該工作面的由該凹部界定的部分內入射在該基板上;以及冷卻器件,該冷卻器件被構造成將該衝壓部的工作溫度保持在預定溫度。
該設備較佳地係進一步包括用於冷卻該絲饋送部的該噴嘴的另一個冷卻器件。
該設備較佳地係進一步包括固定在該分配頭上的驅動器,該驅動器被構造成使該超音波頭與該衝壓部一起在該豎直方向上上下移動。
較佳地,該衝壓部的該凹部塗有難以被無焊劑焊料潤濕的材料。
1‧‧‧基板
2‧‧‧分配頭
3‧‧‧支撐體
4‧‧‧超音波頭
5‧‧‧沖壓部
6‧‧‧絲饋送部
7‧‧‧噴嘴
8‧‧‧焊絲
9‧‧‧驅動輥
10‧‧‧反壓輥
11‧‧‧工作面
12‧‧‧凹部
13‧‧‧側表面
14‧‧‧縱向軸線
15‧‧‧冷卻器件
16‧‧‧冷卻器件
17‧‧‧驅動器
18‧‧‧基板場所
19‧‧‧路徑
20‧‧‧邊緣
合併到該說明書中並且構成該說明書的一部分的附圖示出了本發明的一個或更多個實施例,並且與詳細描述一起用於解釋本發明的原理和實施。附圖不按比例。在附圖中:圖1示意性地示出用於在基板上焊接半導體晶片的機器的分配站的分配頭的側視圖。
圖2示出衝壓部。
圖3示出衝壓部在基板場所上所覆蓋的路徑。
圖1示意性地示出對於理解本發明所需的用於在基板上焊接半導體晶片的機器的分配站的那些部分的側視圖。該分配站包括用於將無焊劑焊料施加到基
板1的各個基板場所上的設備。基板1靠在可加熱的支撐體3上。該設備包括分配頭2,該分配頭在以x和y指定的兩個水準方向上可移動,並且,可選擇地,能夠在以z指定的豎直方向上提升和降低分配頭2。分配頭2包括超音波頭4和絲饋送部6,在該超音波頭4上可移除地固定衝壓部5。超音波頭4被構造成將超音波較佳地在z方向上行進的縱向超音波波施加到衝壓部5,即它們的振盪方向被取向成垂直於支撐體3。超音波波的頻率較佳地在從40kHz到200kHz的範圍內,通常近似為60kHz。利用超音波處理基板1提高了在預期有焊料的表面上的局部潤濕能力,並且因此減少不期望的焊料的流過,這在技術俗語中被稱為“焊料流跡(solder bleed out)”。
絲饋送部6包括:噴嘴7,該噴嘴7例如是由陶瓷製成的毛細管,具有縱向鑽孔,透過該鑽孔引導焊絲8;和驅動裝置,以便使焊絲8前進和縮回。驅動裝置包括例如:由馬達驅動的驅動輥9;和反壓輥10,焊絲8被引導透過驅動輥9與反壓輥10之間。焊絲8通常被纏繞到輥上,該輥以固定方式被佈置在分配站上,或者該輥被佈置在分配頭2上。
衝壓部5具有面向基板1的工作面11,該工作面11用來散佈焊料。衝壓部5設有凹部12,凹部12從衝壓部5的面向絲饋送部6的側表面13通向工作面11,並且因此打開進入工作面11。噴嘴7相對於豎直方向成預定角度α傾斜地對準,並且以如下方式
佈置噴嘴7,所述方式使得:延伸穿過噴嘴7的縱向鑽孔的絲饋送部6的縱向軸線14在衝壓部5的側表面13處進入到凹部12,並且在工作面11的由凹部12界定的部分內入射在基板1上。
圖2以立體圖顯示出放置在基板1上的衝壓部5。在圖2中能夠清楚地看到,焊絲8在衝壓部5的凹部12內入射在基板1上,並且由於基板1的溫度高於焊料的熔化溫度,所以焊絲8的端部熔化。由於分配頭2的衝壓部5形成有凹部12和焊絲8的傾斜饋送,所以焊絲8的尖端接觸在分配頭2的凹部12內的基板場所。焊絲8不接觸衝壓部5:因此焊料的熔化的發生歸因於與熱基板1相接觸而非歸因於與衝壓部5相接觸。因此,正如在圖2中能夠清楚地看到,衝壓部5的凹部12表現為朝絲饋送部6開放且朝工作面11開放的空腔。該空腔在面向基板1的一側在三邊上被界定,並且該空腔僅朝絲饋送部6開放。
衝壓部5或至少其工作面11較佳地由諸如黃銅或青銅的銅合金或由具有高比例的銀和低比例的銅的銀銅合金組成,無焊劑焊料可很好地潤濕這種工作面。衝壓部5的由凹部12界定的表面能夠塗有難以被焊料潤濕的材料。例如,鉻是諸如此類的材料。這防止焊料附著到凹部12的內側,焊料附著到凹部12的內側會導致所輸送的焊料量不總是相等的結果。衝壓部5的外側也可塗有這種材料。
分配頭2較佳地具有第一冷卻器件15(圖
1),該冷卻器件確保:在噴嘴7內的焊絲8的溫度低於焊料的熔化溫度,並且焊絲8維持能夠由驅動裝置推進或縮回的充分剛性。
支撐體3的溫度並且因此基板1的溫度也高於焊料的熔化溫度。該設備的主要部分另外突出到幾乎封閉的腔室(爐)中,在該腔室中,通常N2H2氣氛佔優勢,以減少在基板上形成的氧化物。
無焊劑焊料的熔化溫度通常在300℃至320℃的範圍內。支撐體3被加熱到高於此溫度的溫度,通常為360-380℃。因此,在熔爐中,360-380℃的溫度也同樣相對快速地佔優勢。這些值是示例,它們在具體情況下可能會偏離這些值。
因此,分配頭2較佳地具有第二冷卻器件16(圖1),該第二冷卻器件16用於將衝壓部5的溫度保持在預定的溫度視窗內的目的。因此,冷卻器件16被構造成將衝壓部5的溫度調節至預定的工作溫度。工作溫度是在焊料的熔化溫度的範圍內,通常在處理視窗內,該工作溫度從低於熔化溫度幾開氏度一直延伸到高於焊料的熔化溫度的幾開氏度。實驗表明,太低的工作溫度具有焊料集中在衝壓部的工作面上的結果,焊料有時會從衝壓部5掉落,而太高的工作溫度會導致衝壓部5的腐蝕。冷卻器件16被用來使來自衝壓部5的熱量消散的目的,使得衝壓部5的工作溫度保持在預定的溫度視窗內,在該預定的溫度視窗內,這些效應不會發生或至少大大減少。
冷卻器件16能夠包含集成加熱器,該加熱器一方面被用於在安裝過程開始之前將衝壓部5加熱至工作溫度的目的,並且另一方面被用於與冷卻器件16一起將衝壓部5的溫度調節至期望的工作溫度的目的。
由於分配頭2因各種不同的部件具有相當高的品質並且因此具有相對大的慣性,所以將驅動器17附接在分配頭2上是有利的,這允許超音波頭4與衝壓部5一起在豎直方向上即在z方向上上下移動。音圈檢測器例如被設置用於檢測在衝壓部5降低時衝壓部5與基板1相接觸的時間點。
根據本發明的用於將無焊劑焊料施加到基板1的基板場所上的方法包括下列步驟,基於此目的,使用上述分配設備:A)將分配頭2移動至在焊料將被分配到的下一個基板場所的上方的預定位置;B)使衝壓部5下降直至B1)衝壓部5的工作面11接觸基板場所,B2)衝壓部5的工作面11位於基板場所上方的預定高度處,或B3)衝壓部5的工作面11接觸基板場所,並且將衝壓部5提升到基板場所上方的預定高度,其中在B2和B3中提及的高度被以如下方式設定,所述方式使得該衝壓部5的工作面11在稍後的下列步驟D中被焊料潤濕;
C)透過下列步驟將無焊劑焊料分配到基板場所:C1)使焊絲8以如下方式前進直至焊絲8接觸基板場所,所述方式使得焊絲8的尖端接觸在衝壓部5的凹部12內的基板場所;C2)使焊絲8進一步前進,以便熔化預定量的焊料;以及C3)縮回焊絲8;D)沿著預定路徑移動分配頭以便在基板場所上分配焊料,並且同時對衝壓部5施加超音波;以及E)提升衝壓部5,其中在步驟C3之後執行步驟D,或者在步驟C2期間步驟D已經開始。
如果步驟C2和D同時進行,則這意味著驅動裝置使焊絲8連續地前進,並且使焊料從其端部連續地熔化。能夠以如下方式設計該預定路徑,所述方式使得衝壓部5部分地突出超過基板場所的邊緣。以這種方式,焊料能夠完全覆蓋基板場所。將超音波施加到衝壓部5使得焊料在基板場所上被充分潤濕。為了防止焊料噴射到遠處,有利地,在基板場所的中心開始施加焊料,使得焊料在那裡被充分潤濕而不再流走。
根據預定的輪廓改變超音波的強度和頻率是可能的,具體地,能夠施加單個或多個超音波脈衝(超音波爆發)。
由於焊絲8具有非常好的導熱性,所以當焊絲8在步驟C中與基板1接觸時,焊絲8總會吸
收熱以使焊料部分沉積,由此絲饋送部6的噴嘴7和/或另外的部件升溫。因此,如果必要,噴嘴7由冷卻器件15主動地冷卻,使得焊絲8的溫度保持在其熔化溫度以下,並且焊絲8保持能夠藉由驅動器從噴嘴7被推出以及縮回到噴嘴7中而不出現問題的充分的剛度。
在許多應用中,半導體晶片被安裝在基板場所18上,該基板場所的尺寸近似等於半導體晶片的尺寸。基板通常是所謂的引線框架。基板場所18經薄腹板(未示出)連接到引線框架的框架。因此,焊料部分通常必須覆蓋整個基板場所18。為了實現該目的,使衝壓部5沿著路徑19移動是有利的,該路徑19至少部分地沿著基板場所18的邊緣20引導,並且以如下方式確定路徑19,所述方式使得:衝壓部5的工作面11突出超過邊緣20,並且因此仍然僅部分地接觸基板18。圖3圖示出了該過程。路徑19的其中衝壓部5的工作面11突出超過邊緣20的那些部分由實線箭頭示出,路徑19的其餘部分由虛線箭頭示出。路徑19開始於基板場所18的中心或接近基板場所18的中心,並且隨後首先沿著位於基板場所18的內部的路徑段逐步向外引導,直至它最後沿著基板場所18的邊緣20引導。換言之,路徑19從內側引導至外側。由於在這樣的路徑19的情況下,所以首先使用超音波對基板場所18的位於內部的區域進行處理,焊料充分潤濕在那些區域中,使得作為結果,無任何焊料從基板場所18向遠處噴射。路徑19在此僅作為示例示出,它也可由其它路
徑段組成。在該示例中,衝壓部5的工作面11的輪廓是正方形,然而,它也可以是矩形或圓形或具有任何任意的其它形狀。在某些應用的情況下,在路徑19的起點處使衝壓部5在與具有凹部12的側表面13相反的方向上移動是有利的。儘管如此,由於毛細管效應,熔融焊料仍被散佈。
雖然已經示出並且描述了本發明的實施例和應用,但是,對本領域的技術人員來說明顯的是,在不脫離本文的發明概念的情況下,使比以上描述的更多的變型具有本公開的有益效果是可能的。因此,除所附權利要求和它們的等同物的精神之外,本發明將不受限制。
1‧‧‧基板
2‧‧‧分配頭
3‧‧‧支撐體
4‧‧‧超音波頭
5‧‧‧沖壓部
6‧‧‧絲饋送部
7‧‧‧噴嘴
8‧‧‧焊絲
9‧‧‧驅動輥
10‧‧‧反壓輥
11‧‧‧工作面
12‧‧‧凹部
13‧‧‧側表面
14‧‧‧縱向軸線
15‧‧‧冷卻器件
16‧‧‧冷卻器件
17‧‧‧驅動器
Claims (8)
- 一種用於借助於分配設備將無焊劑焊料分配到基板(1)的基板場所上的方法,該分配設備包括分配頭(2),該分配頭(2)包括衝壓部(5)、超音波頭(4)以及絲饋送部(6),該超音波頭(4)被構造成將超音波施加到該衝壓部(5),其中該衝壓部(5)具有工作面(11),該工作面(11)具有對該衝壓部(5)的側表面(13)開放的凹部(12),並且其中該絲饋送部(6)在相對於該基板(1)的表面傾斜一角度的情況下饋送焊絲(8),所述方法包括下列步驟:A)將該分配頭(2)移動至在焊料將被分配到的下一個基板場所的上方的預定位置;B)使該衝壓部(5)下降直至B1)該衝壓部(5)的該工作面(11)接觸該基板場所,或B2)該衝壓部(5)的該工作面(11)位於該基板場所上方的預定高度處,或B3)該衝壓部(5)的該工作面(11)接觸該基板場所,並且將該衝壓部(5)提升到該基板場所上方的預定高度,其中在B2和B3中所提及的高度被以如下方式設定,所述方式使得該衝壓部(5)的該工作面(11)在稍後的下列步驟D中被焊料潤濕;C)透過下列步驟將無焊劑焊料分配到該基板場所:C1)使該焊絲(8)以如下方式前進直至該焊絲(8)接觸該基板場所,所述方式使得該焊絲(8)的尖端接觸位於該衝壓部(5)的該凹部(12)內的該基板場所;C2)使焊絲(8)進一步前進,以便熔化預定量的焊料, 以及C3)縮回該焊絲(8);D)沿著預定路徑(19)移動該分配頭(2)以便在該基板場所上分配該焊料,並且同時對該衝壓部(5)施加超音波;以及E)提升該衝壓部(5),其中在步驟C3之後執行步驟D,或者在步驟C2期間該步驟D已經開始。
- 如申請專利範圍第1項所述的方法,進一步包括:透過噴嘴(7)饋送該焊絲(8),並且主動地冷卻該噴嘴(7)。
- 如申請專利範圍第1或2項所述的方法,其中該路徑(19)的起點被定位成接近該基板場所的中心,並且其中該路徑(19)從該基板場所的內側行進至外側。
- 如申請專利範圍第1至3項中任一項所述的方法,其中該衝壓部(5)的該凹部(12)塗有難以被無焊劑焊料潤濕的材料。
- 一種用於將無焊劑焊料分配到基板(1)的基板場所上的設備,包括:分配頭(2),該分配頭(2)在兩個水準方向上可移動,並且,可選地,該分配頭(2)在豎直方向上可移動,該分配頭(2)包括超音波頭(4);衝壓部(5),該衝壓部(5)具有工作面(11),該工作面(11)具有朝該衝壓部(5)的側表面(13)開放的凹部(12),其中該衝壓部(5)能夠固定在該超音波頭(4)上; 絲饋送部(6),該絲饋送部(6)具有噴嘴(7),該噴嘴(7)具有縱向鑽孔,透過該縱向鑽孔能夠引導焊絲,其中該絲饋送部(6)的延伸穿過該噴嘴(7)的該縱向鑽孔的縱向軸線(14)在該衝壓部(5)的該側表面(13)處進入到該凹部(12)中,並且在該工作面(11)的由該凹部(12)界定的部分內入射在該基板(1)上;以及冷卻器件(16),該冷卻器件(16)被構造成將該衝壓部(5)的工作溫度保持在預定溫度。
- 如申請專利範圍第5項所述的設備,進一步包括用於冷卻該絲饋送部(6)的該噴嘴(7)的另一個冷卻器件(15)。
- 如申請專利範圍第5或6項所述的設備,進一步包括固定在該分配頭(2)上的驅動器(17),該驅動器(17)被構造成使該超音波頭(4)與該衝壓部(5)一起在該豎直方向上上下移動。
- 如申請專利範圍第5至7中任一項所述的設備,其中該衝壓部(5)的該凹部(12)塗有難以被無焊劑焊料潤濕的材料。
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CH01044/12A CH706712A1 (de) | 2012-07-05 | 2012-07-05 | Verfahren und Vorrichtung zum Auftragen von Lot auf ein Substrat. |
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US (2) | US9339885B2 (zh) |
JP (1) | JP6150205B2 (zh) |
KR (1) | KR102136896B1 (zh) |
CN (1) | CN103521871B (zh) |
CH (2) | CH706712A1 (zh) |
DE (1) | DE102013105931A1 (zh) |
FR (1) | FR2992879B1 (zh) |
IT (1) | ITAN20130119A1 (zh) |
MX (1) | MX362114B (zh) |
MY (1) | MY175176A (zh) |
TW (1) | TWI561324B (zh) |
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DE102014109934A1 (de) * | 2014-07-15 | 2016-01-21 | Pac Tech - Packaging Technologies Gmbh | Vorrichtung zur vereinzelten Applikation von Verbindungsmaterialdepots |
CN108326390B (zh) * | 2017-01-17 | 2021-03-23 | 白光株式会社 | 熔融控制装置及计算机可读存储介质 |
DE102019103140A1 (de) * | 2019-02-08 | 2020-08-13 | Jenoptik Optical Systems Gmbh | Verfahren zum Löten eines oder mehrerer Bauteile |
CN110190001B (zh) * | 2019-06-05 | 2020-11-03 | 扬州扬杰电子科技股份有限公司 | 一种轴向二极管的加工工艺 |
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-
2012
- 2012-07-05 CH CH01044/12A patent/CH706712A1/de not_active Application Discontinuation
-
2013
- 2013-05-29 CH CH01025/13A patent/CH706738B1/de not_active IP Right Cessation
- 2013-06-05 FR FR1355167A patent/FR2992879B1/fr not_active Expired - Fee Related
- 2013-06-07 DE DE102013105931.7A patent/DE102013105931A1/de active Pending
- 2013-06-12 US US13/916,079 patent/US9339885B2/en not_active Expired - Fee Related
- 2013-06-17 TW TW102121334A patent/TWI561324B/zh active
- 2013-06-17 MY MYPI2013002241A patent/MY175176A/en unknown
- 2013-06-21 JP JP2013130895A patent/JP6150205B2/ja active Active
- 2013-06-28 CN CN201310269081.0A patent/CN103521871B/zh active Active
- 2013-07-01 IT IT000119A patent/ITAN20130119A1/it unknown
- 2013-07-02 KR KR1020130076889A patent/KR102136896B1/ko active IP Right Grant
- 2013-07-05 MX MX2013007925A patent/MX362114B/es active IP Right Grant
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2016
- 2016-05-16 US US15/156,197 patent/US20160256949A1/en not_active Abandoned
Also Published As
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JP2014014868A (ja) | 2014-01-30 |
MX362114B (es) | 2019-01-07 |
CH706738A2 (de) | 2014-01-15 |
JP6150205B2 (ja) | 2017-06-21 |
DE102013105931A1 (de) | 2014-01-09 |
FR2992879B1 (fr) | 2016-12-16 |
US9339885B2 (en) | 2016-05-17 |
CH706712A1 (de) | 2014-01-15 |
MX2013007925A (es) | 2014-01-17 |
ITAN20130119A1 (it) | 2014-01-06 |
US20160256949A1 (en) | 2016-09-08 |
CN103521871A (zh) | 2014-01-22 |
KR20140005784A (ko) | 2014-01-15 |
CH706738B1 (de) | 2017-05-15 |
CN103521871B (zh) | 2016-12-28 |
MY175176A (en) | 2020-06-12 |
FR2992879A1 (fr) | 2014-01-10 |
KR102136896B1 (ko) | 2020-07-23 |
TWI561324B (en) | 2016-12-11 |
US20140008421A1 (en) | 2014-01-09 |
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