CN103521871B - 用于在基板上分配无焊剂焊料的方法和设备 - Google Patents
用于在基板上分配无焊剂焊料的方法和设备 Download PDFInfo
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Abstract
用于在基板上分配无焊剂焊料的方法和设备,设备包括具有冲压部(5)的分配头(2),能将超声施加到冲压部(5)。通过下列步骤分配焊料:A)将分配头(2)移动至下一个基板场所上方;B)使所述冲压部(5)下降直至冲压部(5)的工作面(11)接触基板场所或位于基板场所上方的预定高度处;C)通过下列步骤分配焊料:C1)使焊丝(8)前进直至焊丝(8)接触基板场所,其方式使得焊丝(8)的尖端接触位于冲压部(5)的凹部(12)内的基板场所;C2)使焊丝(8)进一步前进以熔化预定量的焊料;和C3)缩回所述焊丝(8);D)移动分配头(2)以在基板场所上散布焊料,并且同时对冲压部(5)施加超声;和E)提升冲压部(5)。
Description
技术领域
本发明涉及用于在基板上分配无焊剂焊料的方法和设备。
背景技术
这种焊接方法通常但并不唯一地用于将半导体芯片安装在称之为引线框架的金属基板上。与利用粘合剂进行安装相比,功率半导体器件通常主要利用软焊料与基板相连接,基板通常由铜组成,以便确保半导体芯片的热损失通过焊接接头更有效地散发。尤其是在功率密度增加的情况下,对焊接接头的同质性的要求较高,即,要求焊料层在整个芯片区域上有限定的厚度、均匀的分布和理想的浸湿以及完全没有气泡和焊接接头的纯度。另一方面,焊料必须不能横向地渗出焊接间隙,并且不能紧接于半导体芯片散布,这就再次要求对焊料部分的精确定量和定位。
在安装半导体芯片的领域中,在实际使用中广泛应用的一种方法是,将焊丝的端部接触已经被加热至焊料熔化温度以上的基板,以便熔化一部分焊丝。由于其简便且灵活,这种方法一般非常适于大量生产。然而,所获得的近似圆形的浸湿表面并不理想地适于矩形或方形的半导体芯片。此外,借助从美国专利US6,056,184获知的一种落料模(punchingdie),可将沉积在基板上的焊料部分制成一种适于矩形半导体芯片的平坦形状。还获知的是,用写头(writing head)沿着特定路径移动焊接金属丝的端部,使得受热的基板持续熔化焊料。焊料轨迹从而沉积在基板上。
从US5,878,939获知一种方法,其中可将液态焊料注射进形成在成型模和基板之间的空腔中。
这些已知的方法具有几个缺点。或者所沉积焊料的形状为圆形,或者必须为每个矩形制出特定的落料模。这样的落料模包括侧壁,所述侧壁将占据基板的一部分。因此,焊料不能被施加到芯片岛的边缘,所述芯片岛容纳半导体芯片。另外,基板必须被加热到焊料的熔化温度之上,并且所沉积的焊料从施加开始直到沉积到半导体芯片上必须保持在液态。另外的缺点是,必须定期地清洗与液态焊料相接触的部位,为此目的就必须中断生产。
从美国专利US4,577,398和美国专利US4,709,849中获知一种方法,在该方法中预制由焊接金属制成的扁平预成型坯(所谓的“焊料预成型坯”),这种坯的尺寸适用于半导体芯片。焊料预成形坯随后会被放置在基板上并且被基板熔化,以便形成具有所需尺寸的焊接层。由于对焊料预成型坯的必要预制以及额外的安装操作,这种方法相对昂贵并且不灵活。
从US2009145950获知通过焊料分配器的写头引导焊丝的方法和设备,当施加焊料时,将焊丝与受热的基板相接触,使得焊料在焊丝的端部处熔化,并且写头沿着平行于基板的表面的预定路径移动。焊料分配器以这种方式在基板上写出焊料轨迹。这种方法中的缺点是,基板仅能被不充分地浸湿,而未预先清洗。
发明内容
本发明的目的是开发不再表现出上述缺点的用于对基板施加无焊剂焊料的方法和设备。
根据本发明的用于将无焊剂焊料分配到基板的基板场所上的方法使用包括分配头的分配设备,该分配头包括冲压部、超声头以及丝馈送部,超声头被构造成将超声施加到冲压部。该冲压部具有工作面,该工作面具有对冲压部的侧表面开放的凹部。该丝馈送部在相对于基板的表面倾斜一角度的情况下馈送焊丝。该方法包括下列步骤:
A)将分配头移动至在焊料将被分配到的下一个基板场所的上方的预定位置;
B)将冲压部下降直至
B1)冲压部的工作面接触基板场所,或
B2)冲压部的工作面位于所述基板场所上方的预定高度处,或
B3)冲压部的工作面接触基板场所,并且将冲压部提升至基板场所上方的预定高度,
其中,在B2和B3中所提及的高度被以如下方式设定,所述方式使得冲压部的工作面在稍后的下列步骤D中被焊料润湿,
C)通过下列步骤将无焊剂焊料分配到基板场所:
C1)使焊丝以如下方式前进直至焊丝接触基板场所,所述方式使得所述焊丝的尖端接触位于冲压部的凹部内的基板场所;
C2)使焊丝进一步前进,以便熔化预定量的焊料;以及
C3)缩回焊丝;
D)沿着预定路径移动分配头以便在基板场所上分配焊料,并且同时对冲压部施加超声;以及
E)提升冲压部,其中
在步骤C3之后执行步骤D,或者在步骤C2期间步骤D已经开始。
该方法优选地进一步包括:通过喷嘴馈送焊丝,并且主动地冷却喷嘴。
根据本发明,用于将无焊剂焊料分配到基板的基板场所上的设备包括:
分配头,所述分配头在两个水平方向上可移动,并且,可选地,所述分配头在竖直方向上可移动,所述分配头包括
超声头;
冲压部,所述冲压部具有工作面,所述工作面具有朝所述冲压部的侧表面开放的凹部,其中所述冲压部能够固定在所述超声头上;
丝馈送部,所述丝馈送部具有喷嘴,所述喷嘴具有纵向钻孔,通过所述纵向钻孔能够引导焊丝,其中所述丝馈送部的延伸穿过所述喷嘴的所述纵向钻孔的纵向轴线在所述冲压部的所述侧表面处进入到所述凹部中,并且在所述工作面的由所述凹部界定的部分内入射在所述基板上;以及
冷却器件,所述冷却器件被构造成将所述冲压部的工作温度保持在预定温度。
该设备优选地进一步包括用于冷却所述丝馈送部的所述喷嘴的另一个冷却器件。
该设备优选地进一步包括固定在所述分配头上的驱动器,所述驱动器被构造成使所述超声头与所述冲压部一起在所述竖直方向上上下移动。
优选地,所述冲压部的所述凹部涂有难以被无焊剂焊料润湿的材料。
附图说明
合并到该说明书中并且构成该说明书的一部分的附图示出了本发明的一个或更多个实施例,并且与详细描述一起用于解释本发明的原理和实施。附图不按比例。在附图中:
图1示意性地示出用于在基板上焊接半导体芯片的机器的分配站的分配头的侧视图,
图2示出冲压部,并且
图3示出冲压部在基板场所上所覆盖的路径。
具体实施方式
图1示意性地示出对于理解本发明所需的用于在基板上焊接半导体芯片的机器的分配站的那些部分的侧视图。该分配站包括用于将无焊剂焊料施加到基板1的各个基板场所上的设备。基板1靠在可加热的支撑体3上。该设备包括分配头2,该分配头在以x和y指定的两个水平方向上可移动,并且,可选地,能够在以z指定的竖直方向上提升和降低分配头2。分配头2包括超声头4和丝馈送部6,在该超声头4上可移除地固定冲压部5。超声头4被构造成将超声优选地在z方向上行进的纵向超声波施加到冲压部5,即它们的振荡方向被取向成垂直于支撑体3。超声波的频率优选地在从40kHz到200kHz的范围内,通常近似为60kHz。利用超声处理基板1提高了在预期有焊料的表面上的局部润湿能力,并且因此减少不期望的焊料的流过,这在技术俗语中被称为“焊料流迹”。
丝馈送部6包括:喷嘴7,该喷嘴7例如是由陶瓷制成的毛细管,具有纵向钻孔,通过该钻孔引导焊丝8;和驱动装置,以便使焊丝8前进和缩回。驱动装置包括例如:由马达驱动的驱动辊9;和反压辊10,焊丝8被引导通过驱动辊9与反压辊10之间。焊丝8通常被缠绕到辊上,该辊以固定方式被布置在分配站上,或者该辊被布置在分配头2上。
冲压部5具有面向基板1的工作面11,该工作面11用来散布焊料。冲压部5设有凹部12,凹部12从冲压部5的面向丝馈送部6的侧表面13通向工作面11,并且因此打开进入工作面11。喷嘴7相对于竖直方向成预定角度α倾斜地对准,并且以如下方式布置喷嘴7,所述方式使得:延伸穿过喷嘴7的纵向钻孔的丝馈送部6的纵向轴线14在冲压部5的侧表面13处进入到凹部12,并且在工作面11的由凹部12界定的部分内入射在基板1上。
图2以透视图示出放置在基板1上的冲压部5。在图2中能够清楚地看到,焊丝8在冲压部5的凹部12内入射在基板1上,并且由于基板1的温度高于焊料的熔化温度,所以焊丝8的端部熔化。由于分配头2的冲压部5形成有凹部12和焊丝8的倾斜馈送,所以焊丝8的尖端接触在分配头2的凹部12内的基板场所。焊丝8不接触冲压部5:因此焊料的熔化的发生归因于与热基板1相接触而非归因于与冲压部5相接触。因此,正如在图2中能够清楚地看到,冲压部5的凹部12表现为朝丝馈送部6开放且朝工作面11开放的空腔。该空腔在面向基板1的一侧在三边上被界定,并且该空腔仅朝丝馈送部6开放。
冲压部5或至少其工作面11优选地由诸如黄铜或青铜的铜合金或由具有高比例的银和低比例的铜的银铜合金组成,无焊剂焊料可很好地润湿这种工作面。冲压部5的由凹部12界定的表面能够涂有难以被焊料润湿的材料。例如,铬是诸如此类的材料。这防止焊料附着到凹部12的内侧,焊料附着到凹部12的内侧会导致所输送的焊料量不总是相等的结果。冲压部5的外侧也可涂有这种材料。
分配头2优选地具有第一冷却器件15(图1),该冷却器件确保:在喷嘴7内的焊丝8的温度低于焊料的熔化温度,并且焊丝8维持能够由驱动装置推进或缩回的充分刚性。
支撑体3的温度并且因此基板1的温度也高于焊料的熔化温度。该设备的主要部分另外突出到几乎封闭的腔室(炉)中,在该腔室中,通常N2H2气氛占优势,以减少在基板上形成的氧化物。
无焊剂焊料的熔化温度通常在300℃至320℃的范围内。支撑体3被加热到高于此温度的温度,通常为360-380℃。因此,在熔炉中,360-380℃的温度也同样相对快速地占优势。这些值是示例,它们在具体情况下可能会偏离这些值。
因此,分配头2优选地具有第二冷却器件16(图1),该第二冷却器件16用于将冲压部5的温度保持在预定的温度窗口内的目的。因此,冷却器件16被构造成将冲压部5的温度调节至预定的工作温度。工作温度是在焊料的熔化温度的范围内,通常在处理窗口内,所述工作温度从低于熔化温度几开氏度一直延伸到高于焊料的熔化温度的几开氏度。实验表明,太低的工作温度具有焊料集中在冲压部的工作面上的结果,焊料有时会从冲压部5掉落,而太高的工作温度会导致冲压部5的腐蚀。冷却器件16被用来使来自冲压部5的热量消散的目的,使得冲压部5的工作温度保持在预定的温度窗口内,在所述预定的温度窗口内,这些效应不会发生或至少大大减少。
冷却器件16能够包含集成加热器,该加热器一方面被用于在安装过程开始之前将冲压部5加热至工作温度的目的,并且另一方面被用于与冷却器件16一起将冲压部5的温度调节至期望的工作温度的目的。
由于分配头2因各种不同的部件具有相当高的质量并且因此具有相对大的惯性,所以将驱动器17附接在分配头2上是有利的,这允许超声头4与冲压部5一起在竖直方向上即在z方向上上下移动。音圈检测器例如被设置用于检测在冲压部5降低时冲压部5与基板1相接触的时间点。
根据本发明的用于将无焊剂焊料施加到基板1的基板场所上的方法包括下列步骤,基于此目的,使用上述分配设备:
A)将分配头2移动至在焊料将被分配到的下一个基板场所的上方的预定位置;
B)使冲压部5下降直至
B1)冲压部5的工作面11接触基板场所,或
B2)冲压部5的工作面11位于基板场所上方的预定高度处,或
B3)冲压部5的工作面11接触基板场所,并且将冲压部5提升到基板场所上方的预定高度,
其中在B2和B3中提及的高度被以如下方式设定,所述方式使得所述冲压部5的工作面11在稍后的下列步骤D中被焊料润湿;
C)通过下列步骤将无焊剂焊料分配到基板场所:
C1)使焊丝8以如下方式前进直至焊丝8接触基板场所,所述方式使得焊丝8的尖端接触在冲压部5的凹部12内的基板场所;
C2)使焊丝8进一步前进,以便熔化预定量的焊料;以及
C3)缩回焊丝8;
D)沿着预定路径移动分配头以便在基板场所上分配焊料,并且同时对冲压部5施加超声;以及
E)提升冲压部5,其中
在步骤C3之后执行步骤D,或者在步骤C2期间步骤D已经开始。
如果步骤C2和D同时进行,则这意味着驱动装置使焊丝8连续地前进,并且使焊料从其端部连续地熔化。能够以如下方式设计所述预定路径,所述方式使得冲压部5部分地突出超过基板场所的边缘。以这种方式,焊料能够完全覆盖基板场所。将超声施加到冲压部5使得焊料在基板场所上被充分润湿。为了防止焊料喷射到远处,有利地,在基板场所的中心开始施加焊料,使得焊料在那里被充分润湿而不再流走。
根据预定的轮廓改变超声波的强度和频率是可能的,具体地,能够施加单个或多个超声脉冲(超声爆发)。
由于焊丝8具有非常好的导热性,所以当焊丝8在步骤C中与基板1接触时,焊丝8总会吸收热以使焊料部分沉积,由此丝馈送部6的喷嘴7和/或另外的部件升温。因此,如果必要,喷嘴7由冷却器件15主动地冷却,使得焊丝8的温度保持在其熔化温度以下,并且焊丝8保持能够通过驱动器从喷嘴7被推出以及缩回到喷嘴7中而不出现问题的充分的刚度。
在许多应用中,半导体芯片被安装在基板场所18上,该基板场所的尺寸近似等于半导体芯片的尺寸。基板通常是所谓的引线框架。基板场所18经薄腹板(未示出)连接到引线框架的框架。因此,焊料部分通常必须覆盖整个基板场所18。为了实现该目的,使冲压部5沿着路径19移动是有利的,该路径19至少部分地沿着基板场所18的边缘20引导,并且以如下方式确定路径19,所述方式使得:冲压部5的工作面11突出超过边缘20,并且因此仍然仅部分地接触基板18。图3图示出了该过程。路径19的其中冲压部5的工作面11突出超过边缘20的那些部分由实线箭头示出,路径19的其余部分由虚线箭头示出。路径19开始于基板场所18的中心或接近基板场所18的中心,并且随后首先沿着位于基板场所18的内部的路径段逐步向外引导,直至它最后沿着基板场所18的边缘20引导。换言之,路径19从内侧引导至外侧。由于在这样的路径19的情况下,所以首先使用超声对基板场所18的位于内部的区域进行处理,焊料充分润湿在那些区域中,使得作为结果,无任何焊料从基板场所18向远处喷射。路径19在此仅作为示例示出,它也可由其它路径段组成。在该示例中,冲压部5的工作面11的轮廓是正方形,然而,它也可以是矩形或圆形或具有任何任意的其它形状。在某些应用的情况下,在路径19的起点处使冲压部5在与具有凹部12的侧表面13相反的方向上移动是有利的。尽管如此,由于毛细管效应,熔融焊料仍被散布。
虽然已经示出并且描述了本发明的实施例和应用,但是,对本领域的技术人员来说明显的是,在不脱离本文的发明概念的情况下,使比以上描述的更多的变型具有本公开的有益效果是可能的。因此,除所附权利要求和它们的等同物的精神之外,本发明将不受限制。
Claims (14)
1.一种借助于分配设备将无焊剂焊料分配到基板(1)的基板场所上的方法,所述分配设备包括分配头(2),所述分配头(2)包括冲压部(5)、超声头(4)以及丝馈送部(6),所述超声头(4)被构造成将超声施加到所述冲压部(5),其中所述冲压部(5)具有工作面(11),所述工作面(11)具有对所述冲压部(5)的侧表面(13)开放的凹部(12),其中所述丝馈送部(6)在相对于所述基板(1)的表面倾斜一角度的情况下馈送焊丝(8),并且其中可加热的支撑体(3)将所述基板(1)加热到在所述焊料的熔化温度之上的温度,所述方法包括下列步骤:
A)将所述分配头(2)移动至在焊料将被分配到的下一个基板场所的上方的预定位置;
B)使所述冲压部(5)下降直至
B1)所述冲压部(5)的所述工作面(11)接触所述基板场所,或
B2)所述冲压部(5)的所述工作面(11)位于所述基板场所上方的预定高度处,或
B3)所述冲压部(5)的所述工作面(11)接触所述基板场所,并且将所述冲压部(5)提升到所述基板场所上方的预定高度,
其中在B2和B3中所提及的高度被以如下方式设定,所述方式使得所述冲压部(5)的所述工作面(11)在稍后的下列步骤D中被焊料润湿;
C)通过下列步骤将无焊剂焊料分配到所述基板场所:
C1)使所述焊丝(8)以如下方式前进直至所述焊丝(8)接触所述基板场所,所述方式使得所述焊丝(8)的尖端接触位于所述冲压部(5)的所述凹部(12)内的所述基板场所;
C2)使焊丝(8)进一步前进,以便熔化预定量的焊料,以及
C3)缩回所述焊丝(8);
D)沿着预定路径(19)移动所述分配头(2)以便在所述基板场所上分配所述焊料,并且同时对所述冲压部(5)施加超声;以及
E)提升所述冲压部(5),其中
在步骤C3之后执行步骤D,或者在步骤C2期间所述步骤D已经开始。
2.根据权利要求1所述的方法,进一步包括:通过喷嘴(7)馈送所述焊丝(8),并且主动地冷却所述喷嘴(7)。
3.根据权利要求1所述的方法,其中所述路径(19)的起点被定位成接近所述基板场所的中心,并且其中所述路径(19)从所述基板场所的内侧行进至外侧。
4.根据权利要求2所述的方法,其中所述路径(19)的起点被定位成接近所述基板场所的中心,并且其中所述路径(19)从所述基板场所的内侧行进至外侧。
5.根据权利要求1至4中的任一项所述的方法,其中所述冲压部(5)的所述凹部(12)涂有难以被无焊剂焊料润湿的材料。
6.一种用于将无焊剂焊料分配到基板(1)的基板场所上的设备,包括:
可加热的支撑体(3),用于将所述基板(1)加热到在所述焊料的熔化温度之上的温度;和
分配头(2),所述分配头(2)在两个水平方向上可移动,所述分配头(2)包括
超声头(4);
冲压部(5),所述冲压部(5)具有工作面(11),所述工作面(11)具有朝所述冲压部(5)的侧表面(13)开放的凹部(12),其中所述冲压部(5)能够固定在所述超声头(4)上;
丝馈送部(6),所述丝馈送部(6)具有喷嘴(7),所述喷嘴(7)具有纵向钻孔,通过所述纵向钻孔能够引导焊丝,其中所述丝馈送部(6)的延伸穿过所述喷嘴(7)的所述纵向钻孔的纵向轴线(14)在所述冲压部(5)的所述侧表面(13)处进入到所述凹部(12)中,并且在所述工作面(11)的由所述凹部(12)界定的部分内入射在所述基板(1)上,使得所述焊丝在所述冲压部(5)的所述凹部(12)内入射在所述基板(1)上;以及
冷却器件(16),所述冷却器件(16)被构造成将所述冲压部(5)的工作温度保持在预定温度。
7.根据权利要求6所述的设备,进一步包括
用于冷却所述丝馈送部(6)的所述喷嘴(7)的另一个冷却器件(15)。
8.根据权利要求6所述的设备,进一步包括
固定在所述分配头(2)上的驱动器(17),所述驱动器(17)被构造成使所述超声头(4)与所述冲压部(5)一起在所述竖直方向上上下移动。
9.根据权利要求7所述的设备,进一步包括
固定在所述分配头(2)上的驱动器(17),所述驱动器(17)被构造成使所述超声头(4)与所述冲压部(5)一起在所述竖直方向上上下移动。
10.根据权利要求6所述的设备,其中所述分配头(2)另外在竖直方向上可移动。
11.根据权利要求7所述的设备,其中所述分配头(2)另外在竖直方向上可移动。
12.根据权利要求8所述的设备,其中所述分配头(2)另外在竖直方向上可移动。
13.根据权利要求9所述的设备,其中所述分配头(2)另外在竖直方向上可移动。
14.根据权利要求6至13中的任一项所述的设备,其中所述冲压部(5)的所述凹部(12)涂有难以被无焊剂焊料润湿的材料。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH01044/12A CH706712A1 (de) | 2012-07-05 | 2012-07-05 | Verfahren und Vorrichtung zum Auftragen von Lot auf ein Substrat. |
CH01044/12 | 2012-07-05 |
Publications (2)
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CN103521871A CN103521871A (zh) | 2014-01-22 |
CN103521871B true CN103521871B (zh) | 2016-12-28 |
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CN201310269081.0A Active CN103521871B (zh) | 2012-07-05 | 2013-06-28 | 用于在基板上分配无焊剂焊料的方法和设备 |
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US (2) | US9339885B2 (zh) |
JP (1) | JP6150205B2 (zh) |
KR (1) | KR102136896B1 (zh) |
CN (1) | CN103521871B (zh) |
CH (2) | CH706712A1 (zh) |
DE (1) | DE102013105931A1 (zh) |
FR (1) | FR2992879B1 (zh) |
IT (1) | ITAN20130119A1 (zh) |
MX (1) | MX362114B (zh) |
MY (1) | MY175176A (zh) |
TW (1) | TWI561324B (zh) |
Families Citing this family (4)
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DE102014109934A1 (de) * | 2014-07-15 | 2016-01-21 | Pac Tech - Packaging Technologies Gmbh | Vorrichtung zur vereinzelten Applikation von Verbindungsmaterialdepots |
CN108326390B (zh) * | 2017-01-17 | 2021-03-23 | 白光株式会社 | 熔融控制装置及计算机可读存储介质 |
DE102019103140A1 (de) * | 2019-02-08 | 2020-08-13 | Jenoptik Optical Systems Gmbh | Verfahren zum Löten eines oder mehrerer Bauteile |
CN110190001B (zh) * | 2019-06-05 | 2020-11-03 | 扬州扬杰电子科技股份有限公司 | 一种轴向二极管的加工工艺 |
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- 2012-07-05 CH CH01044/12A patent/CH706712A1/de not_active Application Discontinuation
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2013
- 2013-05-29 CH CH01025/13A patent/CH706738B1/de not_active IP Right Cessation
- 2013-06-05 FR FR1355167A patent/FR2992879B1/fr not_active Expired - Fee Related
- 2013-06-07 DE DE102013105931.7A patent/DE102013105931A1/de active Pending
- 2013-06-12 US US13/916,079 patent/US9339885B2/en not_active Expired - Fee Related
- 2013-06-17 TW TW102121334A patent/TWI561324B/zh active
- 2013-06-17 MY MYPI2013002241A patent/MY175176A/en unknown
- 2013-06-21 JP JP2013130895A patent/JP6150205B2/ja active Active
- 2013-06-28 CN CN201310269081.0A patent/CN103521871B/zh active Active
- 2013-07-01 IT IT000119A patent/ITAN20130119A1/it unknown
- 2013-07-02 KR KR1020130076889A patent/KR102136896B1/ko active IP Right Grant
- 2013-07-05 MX MX2013007925A patent/MX362114B/es active IP Right Grant
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2016
- 2016-05-16 US US15/156,197 patent/US20160256949A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
---|---|
JP2014014868A (ja) | 2014-01-30 |
MX362114B (es) | 2019-01-07 |
CH706738A2 (de) | 2014-01-15 |
JP6150205B2 (ja) | 2017-06-21 |
DE102013105931A1 (de) | 2014-01-09 |
FR2992879B1 (fr) | 2016-12-16 |
US9339885B2 (en) | 2016-05-17 |
CH706712A1 (de) | 2014-01-15 |
MX2013007925A (es) | 2014-01-17 |
ITAN20130119A1 (it) | 2014-01-06 |
US20160256949A1 (en) | 2016-09-08 |
CN103521871A (zh) | 2014-01-22 |
KR20140005784A (ko) | 2014-01-15 |
CH706738B1 (de) | 2017-05-15 |
MY175176A (en) | 2020-06-12 |
FR2992879A1 (fr) | 2014-01-10 |
KR102136896B1 (ko) | 2020-07-23 |
TWI561324B (en) | 2016-12-11 |
TW201408409A (zh) | 2014-03-01 |
US20140008421A1 (en) | 2014-01-09 |
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