TW201347891A - 包覆焊料之球體及其製造方法 - Google Patents

包覆焊料之球體及其製造方法 Download PDF

Info

Publication number
TW201347891A
TW201347891A TW102110059A TW102110059A TW201347891A TW 201347891 A TW201347891 A TW 201347891A TW 102110059 A TW102110059 A TW 102110059A TW 102110059 A TW102110059 A TW 102110059A TW 201347891 A TW201347891 A TW 201347891A
Authority
TW
Taiwan
Prior art keywords
solder
plating
solder layer
core
mass
Prior art date
Application number
TW102110059A
Other languages
English (en)
Other versions
TWI531437B (zh
Inventor
Ken Asada
Junko Nishimura
Original Assignee
Neomax Materials Co Ltd
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Neomax Materials Co Ltd, Hitachi Metals Ltd filed Critical Neomax Materials Co Ltd
Publication of TW201347891A publication Critical patent/TW201347891A/zh
Application granted granted Critical
Publication of TWI531437B publication Critical patent/TWI531437B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/17—Metallic particles coated with metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/264—Bi as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C12/00—Alloys based on antimony or bismuth
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/16—Apparatus for electrolytic coating of small objects in bulk
    • C25D17/22—Apparatus for electrolytic coating of small objects in bulk having open containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/11334—Manufacturing methods by local deposition of the material of the bump connector in solid form using preformed bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/1316—Iron [Fe] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/1319—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13575—Plural coating layers
    • H01L2224/1358—Plural coating layers being stacked
    • H01L2224/13582—Two-layer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13611—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13613—Bismuth [Bi] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/81815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/36—Material effects
    • H01L2924/365—Metallurgical effects
    • H01L2924/3651—Formation of intermetallics
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/041—Solder preforms in the shape of solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3478—Applying solder preforms; Transferring prefabricated solder patterns

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

本發明之實施方式的包覆焊料之球體(10A)，具有球體狀之核心(11)、及以包覆核心(11)之方式形成之焊料層(12)，焊料層(12)，含有Sn及Bi，Bi含有率為45質量%以上、65質量%以下，而且，Bi含有率，於內側較高，於外側較低。其他包覆焊料之球體(10B)，於核心(11)與焊料層(12)之間，更具有Ni電鍍層(13)。

Description

包覆焊料之球體及其製造方法
本發明係與使用於半導體封裝之輸出入端子的包覆焊料之球體及其製造方法相關。
包覆焊料之球體，主要係用以連結電氣．電子機器之零件。具體而言，包覆焊料之球體，例如，使用於在零件周圍具有導線端子之QFP(Quard Flat Package，四方扁平封裝)、相對較小型之可多銷化的BGA(Ball Grid Array，球柵陣列)及CSP(Chip Size Package，晶片尺寸封裝)等之半導體封裝的輸出入端子。包覆焊料之球體的構成，例如，係於直徑為50μm~1.5mm程度之由金屬或樹脂所形成之微小球表面，配設含有鉛(Pb)的焊料層。
近年來，含鉛之焊料，為了對應環境問題，往往被置換成無鉛焊料(無Pb焊料)。例如，專利文獻1及專利文獻2記載著，具有不含鉛之錫-銀(Sn-Ag)系焊料層的包覆焊料之球體。然而，錫-銀系之焊料層，有融點較高(例如，220℃)的問題。
其次，專利文獻3揭示著，具有錫-鉍(Sn-Bi)二元系之焊料層的包覆焊料之球體。依據專利文獻3的話，藉由錫-鉍之二元系之焊料層的Bi之含有率，於最內周為15.0質量%~22.0質量%，於最外周為29.0質量%~44.0 質量%，可以使焊料層之融點降至140℃為止。
【先前技術文献】 【專利文獻】
【專利文獻1】日本特開2004-114123號公報
【專利文獻2】日本特開2004-128262號公報
【專利文獻3】日本特開2007-46087號公報
然而，依據本發明者之檢討的話，專利文獻3所記載之技術有下述問題。
由第7圖所示之錫-鉍之二元系之狀態圖可以理解，即使Bi含有率較低之組成，140℃即可出現液相。然而，為了使專利文獻3所記載之組成範圍的焊料層完全成為熔融狀態(液相)，必須加熱至超過200℃之溫度，所以，專利文獻3之實施例，應係以220℃實施重熔。此外，專利文獻3所記載之組成範圍，因為含有較多固液共存狀態之組成，不加熱至超過200℃之溫度的話，熔融狀態不安定，固化後之焊料層的構造容易不均一。亦即，將專利文獻3記載之包覆焊料之球體以160℃以下之溫度進行重熔的話，固化後之焊料層的構造不均一，結果，有機械特性之誤差較大的問題。而且，如專利文獻3之記載所示，為了使焊料層之外側有較高之Bi濃度，必須一邊實施電鍍，一邊對電鍍液補充Bi，而難以管理電鍍液中之Bi濃度。
本發明，有鑑於該課題，其目的在提供可在160℃以下之溫度下實施重熔之包覆焊料之球體及其製造方法。
本發明之實施方式的包覆焊料之球體，係具有球體狀之核心、及以包 覆該核心之方式形成之焊料層，該焊料層含有Sn及Bi，Bi含有率為45質量%以上、65質量%以下，而且，Bi含有率，於內側較高，於外側較低。該焊料層，實質上，係以只含有Sn及Bi之二元系合金來形成。此處，「實質上，只含有Sn及Bi」係指，只要至未得到本發明效果之程度為止並對融點沒有影響，可以含有其他元素。
其一實施方式，昇溫速度為10℃/分鐘所檢測之DSC曲線的融化結束溫度為160℃以下。此時，開始融化溫度以135℃以上為佳。
其一實施方式，該包覆焊料之球體，於該核心與該焊料層之間，更具有Ni電鍍層。此時，該核心以由銅來形成為佳。
本發明之實施方式的包覆焊料之球體之製造方法，係其中任一所記載的包覆焊料之球體之製造方法，包含：準備球體狀之核心的製程；及在以垂直軸為中心進行旋轉之電鍍槽內的電鍍液中，以電鍍法對該核心形成焊料層的製程。
依據本發明之實施方式的話，提供具有可以160℃以下之溫度實施重熔之焊料層的包覆焊料之球體及其製造方法。
1‧‧‧旋轉軸
3‧‧‧陽極
4‧‧‧電鍍液
5‧‧‧被電鍍物
6‧‧‧上蓋
7‧‧‧電鍍槽
7a‧‧‧底部
7b‧‧‧傾斜部
7c‧‧‧第1圓筒部
7d‧‧‧第2圓筒部
8‧‧‧圓筒構件
100‧‧‧高速旋轉電鍍裝置
10A、10B‧‧‧包覆之球體
11‧‧‧核心
12‧‧‧焊料層
13‧‧‧電鍍層(Ni電鍍層)
第1(a)及(b)圖係本發明之實施方式的包覆焊料之球體10A及10B的示意剖面圖。
第2圖係利用於本發明之實施方式的包覆焊料之球體的製作之高速旋轉電鍍裝置100的構造示意圖。
第3(a)、(b)、及(c)圖係本發明之實施方式的實施例之包覆焊料之各球體A、B、及C的DSC曲線圖。
第4(a)及(b)圖係比較例之包覆焊料之各球體D及E的DSC曲線圖。
第5(a)及(b)圖係包覆焊料之球體A之剖面SEM像(組成像)圖。
第6圖係以旋轉滾筒法所製作之包覆焊料之球體的剖面SEM像(組成像)圖。
第7圖係錫-鉍之二元系的狀態圖。
【實施本發明之最佳形態】
以下，參照圖式，針對本發明之實施方式的包覆焊料之球體及其製造方法進行說明。
第1(a)及(b)圖，係本發明之實施方式的包覆焊料之球體10A及10B的示意剖面圖。
第1(a)圖所示之包覆焊料之球體10A，具有：球體狀(球狀)之核心11；及以包覆核心11之方式形成的焊料層12。焊料層12，含有Sn及Bi，Bi含有率為45質量%以上、65質量%以下，而且，Bi含有率，於內側較高，於外側較低。焊料層12，實質上，係以只含有Sn及Bi之二元系合金來形成。核心11，係由金屬或樹脂所形成。金屬，例如，係銅(Cu)、含銅之合金、或不鏽鋼(SUS)。核心11之直徑，例如，為50μm以上、1.5mm以下。
第1(b)圖所示之包覆焊料之球體10B，於核心11之表面，更具有電鍍層13，於電鍍層13之上有焊料層12，此點與包覆焊料之球體10A不同。電鍍層13，例如，係鎳(Ni)電鍍層。電鍍層13之厚度，例如，為0.1μm以上、4μm以下。例如，將於由銅(Cu)所形成之核心11直接形成有焊料層12的包覆焊料之球體10A進行重熔的話，則在核心11與焊料層12之界面，產生Cu6Sn5之金屬間化合物，而降低下落衝撃性。藉由設置電鍍層13，可以防止該金屬間化合物的產生。
實質上只含有Sn及Bi之二元系合金，Bi含有率為45質量%以上、65 質量%以下之組成，接近共晶組成(Bi含有率為58質量%，參照第7圖)，固液共存狀態之溫度範圍為較狹窄之139℃以上、160℃以下。因此，因為不但可以160℃以下之溫度實施重熔，也可得到均一、安定之熔融狀態，故可提高固化後(接合後)之焊料層之構造的均一性，縮小機械特性的誤差。具有本發明之實施方式之包覆焊料之球體10A及10B的焊料層12，以昇溫速度為10℃/分鐘所檢測之DSC曲線的融化結束溫度為160℃以下、開始融化溫度為135℃以上為佳。
Bi含有率為內側(核心11側)較高、外側較低之Bi濃度分佈，可以容易形成。電鍍液中，相對於Sn藉由陽極之熔解而隨時對電鍍液中進行補給，Bi在電鍍初期進行添加後，未進行補充的話，隨著電鍍的進行，電鍍液中之Sn之存在比率增大(Bi之存在比率降低)。所以，本發明之實施方式的包覆焊料之球體10A及10B，相較於專利文獻3所記載之包覆焊料之球體，於容易製造上大為有利。
本發明之實施方式的包覆焊料之球體之製造方法，係用以製造該包覆焊料之球體的方法，以包含：準備球體狀之核心的製程；及在以垂直軸(鉛直軸)為中心進行旋轉之電鍍槽內的電鍍液中，以電鍍法對核心形成焊料層的製程；為佳。
以垂直軸為中心旋轉電鍍槽來執行電鍍的製程，例如，可以利用第2圖所示之高速旋轉電鍍裝置100來實施。
高速旋轉電鍍裝置100，具有支撐於垂直延伸之旋轉軸1而可水平旋轉的圓筒狀之電鍍槽7。電鍍槽7，具有：圓盤狀之底部7a；以擴張底部7a之方式連結於底部7a之傾斜部7b；連結於傾斜部7b，具有陰極之第1圓筒部7c；以及連結於第1圓筒部7c，內徑小於第1圓筒部7c之第2圓筒部7d。電鍍槽7之上面，由底部7a與平行平板狀之上蓋6所覆蓋，連結於第2圓筒部7d。旋轉軸1，例如，係馬達之軸，支撐著電鍍槽底部7a，而且，使電鍍槽7旋轉。當然，也可以為可以進行正旋轉及逆旋轉之雙方的方式(例 如，最大旋轉數1000rpm)。
電鍍裝置100，於電鍍槽7之第1圓筒部7c，配設有陰極。被電鍍物5接觸陰極時，對被電鍍物5進行通電，來形成電鍍層。配設於第1圓筒部7c之陰極，例如，可以使用鈦、黃銅、不鏽鋼、銅等。
上蓋6，於其中央部，具有供陽極3伸入電鍍槽7內之開口部。此處，陽極3係使用錫(Sn)。電鍍裝置100，具有未圖示之直流電源，用以對第1圓筒部7c之陰極、與陽極3之間施加電壓。施加電壓，以使施加電流值或電壓保持一定之方式來控制。此外，也可以使電流密度保持一定之方式來控制，只是操作會較為煩雜。
上蓋6之開口部，由圓筒構件8所環繞。圓筒構件8，係在電鍍槽7之高速旋轉時或反轉時，防止電鍍液4的飛散。
此外，上蓋6，係在電鍍槽7之高速旋轉時，抑制電鍍槽7之中心部之電鍍液面的變動。因此，因為可以防止陽極3之整體或大部分曝露在電鍍液4下，故可以均一膜厚來形成良好外觀的電鍍層。
此外，電鍍槽7，因為於內周部具有傾斜部7b，承受到離心力的被電鍍物5沿著傾斜部7b向上。藉此，可以防止被電鍍物5積存於電鍍槽7之底部，而容易使被電鍍物5接觸第1圓筒部7c之陰極。此外，因為於第1圓筒部7c之上，具有內徑小於第1圓筒部7c之第2圓筒部7d，可使被電鍍物5有效率地接觸第1圓筒部7c之陰極。傾斜部7b之傾斜角α為大於0°、90°以下，可以對應被電鍍物5之量及電鍍槽7之旋轉速度等來進行適度地設定。例如，α為45°。此外，第2圓筒部7d之內徑，以與傾斜部7b之最小內徑相同之程度為佳。
其次，以複數實驗結果之例示，來對本發明之實施方式的包覆焊料之球體10A及其製造方法進行詳細說明。
以下之實驗例中，係使用第2圖所示之高速旋轉電鍍裝置100，來製作具有焊料層12之包覆焊料之球體10A。此處，電鍍裝置100之電鍍槽7的外周為180mm，旋轉速度為350rpm。電鍍液4，可以使用甲磺酸系之電鍍液(例如，大和化成研究所市販物)。電鍍液，含有甲磺酸Sn、甲磺酸Bi、甲磺酸、及界面活性劑。可以使用其他如專利文獻3所記載之電鍍液等公知的電鍍液。各濃度係對應所形成之焊料層12的組成來進行調整。此外，電鍍開始後，不追加甲磺酸Bi，並以使施加電流保持一定之方式來調整電壓，以內側較高、外側較低之Bi含有率來形成焊料層。核心11，係使用直徑為560μm之銅球。焊料層12之厚度為約20μm。
第3(a)、(b)、及(c)圖，係分別圖示著本發明之實施方式的實施例之包覆焊料之球體A、B、及C的DSC曲線。包覆焊料之球體A，係具有含53質量%之Bi的Sn-Bi二元系焊料層，包覆焊料之球體B，係具有含45質量%之Bi的Sn-Bi二元系焊料層，包覆焊料之球體C，係具有含65質量%之Bi的Sn-Bi二元系焊料層。第4(a)及(b)圖，係圖示著比較例之包覆焊料之球體D及E的DSC曲線。包覆焊料之球體D，係具有含18質量%之Bi的Sn-Bi二元系焊料層，包覆焊料之球體E，係具有含79質量%之Bi的Sn-Bi二元系焊料層。
DSC之檢測，係使用SII科技公司製之示差掃描型熱量計DSC6220。試料，係使用40mg之包覆焊料之球體、鋁製之鍋。昇溫速度為10℃/分鐘、檢測溫度範圍為100℃~250℃，取樣間隔為0.2秒。載體氣體使用氬。
如第3(a)圖所示，Bi含有率為53質量%之包覆焊料之球體A的DSC曲線，開始融化溫度(融解開始溫度)為137.4℃，融化結束溫度(融解結束溫度)為144.8℃。如此，因為焊料層12之組成接近共晶組成(Bi為58質量%)，融解峰部較陡峭，以160℃以下之溫度可進行充分之重熔，並得到均質的焊料層12。
此外，如第3(b)圖所示，Bi含有率為45質量%之包覆焊料之球體B的DSC曲線，開始融化溫度為136.9℃，融化結束溫度為153.3℃。如此，即使Bi含有率為45質量%，融解峰部也較為陡峭，以160℃以下之溫度可進行充分之重熔，並得到均質的焊料層12。
而且，如第3圖(c)所示，Bi含有率為65質量%之包覆焊料之球體C的DSC曲線，開始融化溫度為136.9℃，融化結束溫度為159.8℃。如此，即使Bi含有率為65質量%，融解峰部也較為陡峭，以160℃以下之溫度可進行充分之重熔，並得到均質的焊料層12。
另一方面，如第4(a)圖所示，Bi含有率為18質量%之包覆焊料之球體D的DSC曲線，開始融化溫度為138.0℃，十分偏低，然而，融化結束溫度為超過160℃的185.2℃。此外，如第4(b)圖所示，Bi含有率為79質量%之包覆焊料之球體E的DSC曲線，開始融化溫度為136.9℃，十分偏低，然而，融化結束溫度為遠超過160℃的195.8℃。如此，大幅偏離共晶組成的話，焊料層在160℃以下之溫度完全無法融解，此外，固化後之構造也容易不均一。
因此，為了可以在160℃以下之溫度進行重熔並得到均質的焊料層12，Bi含有率以45質量%以上為佳。另一方面，Bi含有率以65質量%以下為佳，而且，因為Bi含有量較少則融點愈低，故Bi含有率為58質量%以下(Bi含有率比共晶組成更低)更佳。參照第7圖之狀態圖，與Bi含有率為45質量%之合金相同融點的Bi含有率，超過65質量%，然而，Bi含有率過大的話，會發生焊料之接合強度的誤差變大等問題。其應係因為Bi含有率超過共晶組成的話，Bi之熔融狀態呈現不安定，而使焊料層12熔融固化後的構造呈現不均一。尤其是，Bi含有率超過65質量%的話，機械特性之誤差變大。
第5(a)及(b)圖，係該包覆焊料之球體A之剖面的SEM組成像。第5(a)圖係第5(b)圖之放大圖。第6圖，係以專利文獻3所記載之旋轉滾筒法所 製作之包覆焊料之球體的剖面SEM像(組成像)。
由第5(a)、(b)圖與第6圖之比較可以得知，採用滾筒電鍍法的話，於焊料層內形成有「空隙」，相對於此(第6圖)，藉由使用高速旋轉電鍍裝置，可以得到沒有「空隙」之緻密的焊料層12(第5(a)及(b)圖)。
此外，第5(a)及(b)圖中，由內側分佈著較多較明亮之點，可以得知，比Sn為重之元素的Bi含有率，於內側(核心側)較高。一般而言，SEM之組成像的觀察時，輕元素較暗，重元素較亮。
如此，利用高速旋轉電鍍裝置的話，可以容易製造具有緻密焊料層之實施例的包覆焊料之球體。
【產業上可利用性】
本發明之包覆焊料之球體及其製造方法，適合使用於應用在半導體封裝之輸出入端子。
1‧‧‧旋轉軸
3‧‧‧陽極
4‧‧‧電鍍液
5‧‧‧被電鍍物
6‧‧‧上蓋
7‧‧‧電鍍槽
7a‧‧‧底部
7b‧‧‧傾斜部
7c‧‧‧第1圓筒部
7d‧‧‧第2圓筒部
8‧‧‧圓筒構件
100‧‧‧高速旋轉電鍍裝置

Claims (4)

  1. 一種包覆焊料之球體，其特徵為具有：球體狀之核心；及焊料層，以包覆該核心之方式來形成；且該焊料層，含有Sn及Bi，Bi含有率為45質量%以上、65質量%以下，且Bi含有率，於內側較高、於外側較低。
  2. 如申請專利範圍第1項所記載之包覆焊料之球體，其中：昇溫速度為10℃/分鐘所檢測之DSC曲線的融化結束溫度為160℃以下。
  3. 如申請專利範圍第1或2項所記載之包覆焊料之球體，其中於該核心與該焊料層之間，更具有Ni電鍍層。
  4. 一種包覆焊料之球體之製造方法，係申請專利範圍第1至3項之其中任一項所記載之包覆焊料之球體的製造方法，其特徵為包含：準備球體狀之核心之製程；及在以垂直軸為中心進行旋轉之電鍍槽內的電鍍液中，以電鍍法對該核心形成焊料層之製程。
TW102110059A 2012-03-23 2013-03-21 包覆焊料之球體及其製造方法 TWI531437B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012066940 2012-03-23

Publications (2)

Publication Number Publication Date
TW201347891A true TW201347891A (zh) 2013-12-01
TWI531437B TWI531437B (zh) 2016-05-01

Family

ID=49222625

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102110059A TWI531437B (zh) 2012-03-23 2013-03-21 包覆焊料之球體及其製造方法

Country Status (5)

Country Link
JP (1) JP5367924B1 (zh)
KR (1) KR101461125B1 (zh)
CN (1) CN103703168B (zh)
TW (1) TWI531437B (zh)
WO (1) WO2013141166A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI648416B (zh) * 2016-12-07 2019-01-21 日商千住金屬工業股份有限公司 核材料和半導體封裝以及形成凸塊電極的方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9351407B1 (en) 2015-01-08 2016-05-24 Freescale Semiconductor, Inc. Method for forming multilayer device having solder filled via connection
CN105345304B (zh) * 2015-12-02 2017-07-25 华北水利水电大学 一种过饱和钎料及其制备方法
JP6587099B2 (ja) * 2015-12-15 2019-10-09 三菱マテリアル株式会社 ハンダ粉末及びその製造方法並びにこの粉末を用いたハンダ用ペーストの調製方法
WO2018056313A1 (ja) * 2016-09-21 2018-03-29 新日鉄住金マテリアルズ株式会社 複層金属ボール
CN106825981B (zh) * 2017-01-12 2019-05-24 江苏兴达钢帘线股份有限公司 用于太阳能电池的导电焊丝的制备方法
WO2018189901A1 (ja) * 2017-04-14 2018-10-18 Ykk株式会社 めっき材及びその製造方法
CN107541702A (zh) * 2017-09-08 2018-01-05 张家港创博金属科技有限公司 一种高效为核球镀层的方法与装置
JP6376266B1 (ja) * 2017-10-24 2018-08-22 千住金属工業株式会社 核材料およびはんだ継手およびバンプ電極の形成方法
CN107877030B (zh) * 2017-11-07 2020-01-14 深圳市汉尔信电子科技有限公司 一种纳米锡铋复合焊膏及制备方法
CN108176850B (zh) * 2017-12-28 2019-12-10 北京康普锡威科技有限公司 一种离心雾化锡包铜复合粉末的制备方法
JP7442268B2 (ja) 2019-03-26 2024-03-04 日本製鉄株式会社 地下躯体構造
JP6761199B1 (ja) 2019-10-25 2020-09-23 千住金属工業株式会社 核材料、電子部品及びバンプ電極の形成方法
JP6892621B1 (ja) 2020-09-10 2021-06-23 千住金属工業株式会社 核材料、電子部品及びバンプ電極の形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3360250B2 (ja) * 1998-03-05 2002-12-24 株式会社アライドマテリアル 複合マイクロボールとその製造方法と製造装置
KR100431090B1 (ko) * 2001-06-20 2004-05-12 정재필 저융점 도금층을 이용한 무연솔더
JP3924552B2 (ja) * 2003-06-16 2007-06-06 シャープ株式会社 導電性ボールおよびそれを用いた電子部品の外部電極形成方法
JP2007046087A (ja) * 2005-08-09 2007-02-22 Millenium Gate Technology Co Ltd 金属ボール
CN101323056B (zh) * 2007-06-13 2012-11-28 富士康(昆山)电脑接插件有限公司 锡球及使用该锡球的电连接器
CN101869982A (zh) * 2010-06-26 2010-10-27 上海交通大学 核壳型铝锡铋无铅焊料及其制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI648416B (zh) * 2016-12-07 2019-01-21 日商千住金屬工業股份有限公司 核材料和半導體封裝以及形成凸塊電極的方法

Also Published As

Publication number Publication date
CN103703168A (zh) 2014-04-02
CN103703168B (zh) 2015-04-08
KR101461125B1 (ko) 2014-11-13
JP5367924B1 (ja) 2013-12-11
WO2013141166A1 (ja) 2013-09-26
JPWO2013141166A1 (ja) 2015-08-03
KR20130133097A (ko) 2013-12-05
TWI531437B (zh) 2016-05-01

Similar Documents

Publication Publication Date Title
TWI531437B (zh) 包覆焊料之球體及其製造方法
US10888957B2 (en) Soldering material
JP6217836B1 (ja) 核材料および半導体パッケージおよびバンプ電極の形成方法
JPH11124682A (ja) 微小プラスチック球へのめっき方法
JP2007081141A (ja) Ｃｕコアボールとその製造方法
WO2006017327A2 (en) Electrocodeposition of lead free tin alloys
JP2010040691A (ja) 鉛フリーバンプ形成方法
JP7091405B2 (ja) Ｓｎ－Ｂｉ－Ｉｎ系低融点接合部材および、その製造方法、ならびに半導体電子回路およびその実装方法
Gupte et al. Effect of solder paste volume and reflow parameters on solder paste wicking and joint shear strength of Ni–Au-coated Cu spheres
Jung et al. Characteristics of Sn–Cu solder bump formed by electroplating for flip chip
CN109693054B (zh) 芯材料和钎焊接头和凸块电极的形成方法
US9050654B2 (en) Method of manufacturing composite ball for electronic parts
JP6226233B2 (ja) 有芯構造はんだバンプ及びその製造方法
JP2007046087A (ja) 金属ボール
CN113767469B (zh) 芯材料、电子部件和凸点电极的形成方法
JP7091406B2 (ja) Ｓｎ－Ｂｉ－Ｉｎ系低融点接合部材、微小部材および半導体電子回路、バンプの製造方法ならびに半導体電子回路の実装方法
US20220395935A1 (en) Sn-bi-in-based low melting-point joining member, production method therefor, semiconductor electronic circuit, and mounting method therefor
JP2009088431A (ja) バンプ形成用ペースト、及びバンプ構造体
El Amrani et al. Investigation of a low-cost sequential plating based process for pb-free bumping
WO2022050185A1 (ja) 低融点接合部材およびその製造方法ならびに半導体電子回路およびその実装方法
JP7080867B2 (ja) Ｓｎ－Ｂｉ－Ｉｎ系低融点接合部材、微小部材および半導体電子回路、バンプの製造方法ならびに半導体電子回路の実装方法
Wang et al. Preparation of Sn–Ag–In solder bumps by electroplating of Sn–Ag and Indium in sequence and the effect of Indium addition on microstructure and shear strength
JP2002299381A (ja) はんだめっきボールおよびそれを用いた半導体接続構造の製造方法
KR101196972B1 (ko) 전자부품용 복합 볼의 제조방법
Yin et al. Development of micro-alloying method for Cu pillar solder bump by solid liquid interaction

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees