TW201346003A - 接著片及半導體裝置的製造方法 - Google Patents

接著片及半導體裝置的製造方法 Download PDF

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Publication number
TW201346003A
TW201346003A TW102108050A TW102108050A TW201346003A TW 201346003 A TW201346003 A TW 201346003A TW 102108050 A TW102108050 A TW 102108050A TW 102108050 A TW102108050 A TW 102108050A TW 201346003 A TW201346003 A TW 201346003A
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Taiwan
Prior art keywords
adhesive layer
mass
adhesive
softening point
semiconductor device
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TW102108050A
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English (en)
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TWI485225B (zh
Inventor
Megumi Kodama
Takahiro Tokuyasu
Tetsurou Iwakura
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Hitachi Chemical Co Ltd
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Publication of TW201346003A publication Critical patent/TW201346003A/zh
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Publication of TWI485225B publication Critical patent/TWI485225B/zh

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    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
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Abstract

本發明的接著片包括樹脂組成物，所述樹脂組成物包含：(A)高分子量成分、(B1)軟化點不足50℃的熱硬化性成分、(B2)軟化點為50℃以上且100℃以下的熱硬化性成分、以及(C)軟化點為100℃以下的苯酚樹脂，該接著片以100質量%的該樹脂組成物為基準，含有11質量%~22質量%的上述(A)高分子量成分、10質量%~20質量%的上述(B1)軟化點不足50℃的熱硬化性成分、10質量%~20質量%的上述(B2)軟化點為50℃以上且100℃以下的熱硬化性成分、以及15質量%~30質量%的上述(C)軟化點為100℃以下的苯酚樹脂。

Description

接著片及半導體裝置的製造方法
本發明是有關於一種接著片及使用了接著片且包括帶有接著劑層的半導體晶片的半導體裝置的製造方法。
近年來，將可擕式電話、可擕式音頻設備用的記憶體密封晶片(Memory Package Chip)多段積層得到的堆疊多晶片密封(Multi Chip Package，MCP)日益普及。而且，隨著圖像處理技術及可擕式電話等的多功能化，上述密封的高集成化、高密度化及薄型化得到發展。作為用於製造上述半導體裝置的膜，例如可以列舉專利文獻1~5中記載的接著片。
先前技術文獻
專利文獻
專利文獻1：日本專利特開2001-279197號公報
專利文獻2：日本專利特開2002-222913號公報
專利文獻3：日本專利第3913481號公報
專利文獻4：日本專利特開2002-220576號公報
專利文獻5：日本專利特開2004-072009號公報
近年來，隨著半導體晶圓的膜化及配線的微細化等的進步，對可以實現具高可靠性的半導體裝置的接著膜的開發要求日益提高。特別是要求低黏性(tack)以提高拾取(pick-up)製程時的操作性、或者要求低黏度以確保在進行晶片黏著(die attach)製程時接著劑對基板或半導體晶片之凹凸部或引線的埋入性。
然而，當使用低黏度的接著膜製造半導體裝置時，為了抑制引線接合(wire bonding)時的起泡，必需進行對接著劑加熱的後硬化(after cure)製程。使用了低黏度的接著膜的半導體裝置通常可以按照下述方法來製造。首先，在半導體晶圓上貼附接著片，之後進行切割而使半導體晶圓單體化。接著，將所得的半導體晶片自接著片剝離(拾取製程)，並經由接著劑壓著在基板等上(晶片黏著(Die Attach)製程)。接著，進行上述的後硬化(膜硬化(film cure)製程)後，藉由引線接合將半導體晶片連接於基板上。進而，視需要反覆進行如下製程：經由接著劑一邊接著半導體晶片一邊進行積層，並且藉由引線接合將半導體晶片連接於基板上。藉此，半導體晶片被多段積層。然後，完全結束藉由引線接合進行連接的製程後，對半導體晶片進行樹脂密封。
但是，對於上述專利文獻1~5中所記載的接著膜而言，僅以晶片黏著製程在低溫、低負荷下的壓著安裝，難以將接著劑充分埋入基板或半導體晶片或引線中。而且，由於是低黏度的膜，所以產生膜的黏著力強而黏性高，從而在拾取製程中無法拾取的問題，或者為了抑制起泡而必需反覆進行膜硬化製程，從而製程時間需要非常長的問題。
本發明是為了解決上述問題而成，其目的在於提供一種接著片，該接著片能夠一邊提高生產效率，一邊實現埋入性及拾取性良好且具備高可靠性的半導體裝置。
為了解決上述課題，本發明的一觀點的接著片的特徵在於：包括樹脂組成物，所述樹脂組成物包含：(A)高分子量成分、(B1)軟化點不足50℃的熱硬化性成分、(B2)軟化點為50℃以上且100℃以下的熱硬化性成分、以及(C)軟化點為100℃以下的苯酚樹脂，該接著片中，以100質量%的該樹脂組成物為基準，含有11質量%~22質量%的(A)高分子量成分、10質量%~20質量%的(B1)軟化點不足50℃的熱硬化性成分、10質量%~20質量%的(B2)軟化點為50℃以上且100℃以下的熱硬化性成分、以及15質量%~30質量%的(C)軟化點為100℃以下的苯酚樹脂(phenol resin)。
本發明的一觀點的接著片，藉由特定出接著劑組成物中所含的(A)、(B1)、(B2)及(C)成分以及其含量，可以使這些成分相輔相成，而降低黏性強度或80℃下的熔融黏度。因此，可以提供良好的拾取性或晶片接合(die bonding)性，並且可以提高所得的半導體裝置的可靠性。此外，若使用該接著片製造半導體裝置，則即使在縮短了後硬化時間的情況下，也可以抑制引線接合時的起泡。因此，藉由本發明的一觀點的接著片，可以一邊提高生產效率，一邊提供具備高可靠性的半導體裝置。
此外，本發明的一觀點的接著片即使接著劑層在80℃下的熔融黏度為300Pa．s~3000Pa．s亦可。此時，在晶片接合製程中，可以對形成於基板等的表面的凹凸之凹部充分良好地填充接著劑。因此，可提高基板與半導體晶片之間的接著性，並且可進一步提高半導體裝置的可靠性。
本發明的一觀點的半導體裝置的製造方法是包括使用了上述接著片的帶有接著劑層的半導體晶片的半導體裝置的製造方法，其特徵在於：將帶有接著劑層的半導體晶片壓著在電路基板上後，對接著劑層進行在110℃~125℃下且0.5小時~1小時的加熱的膜硬化製程；以及將帶有接著劑層的半導體晶片與電路基板經由接合引線而在230℃以下電性連接的引線接合製程。
根據上述製造方法，與使用習知的接著片的情況相比，後硬化時間短，並且可提高半導體裝置的生產效率。
根據本發明，可以提供一種接著片，該接著片可以一邊提高生產效率，一邊實現埋入性及拾取性良好且具備高可靠性的半導體裝置。
1‧‧‧接著片
2、8‧‧‧基材
4、40‧‧‧接著劑層
10‧‧‧黏著層
12‧‧‧切割片
14‧‧‧支撐構件
14a‧‧‧支撐構件的表面
18‧‧‧帶有接著劑層的半導體元件
41‧‧‧接著劑
70、90‧‧‧基板
74、84、94、104‧‧‧電路圖案
76‧‧‧端子
78、88、98‧‧‧引線
80‧‧‧密封材料
100、200、400‧‧‧半導體裝置
300‧‧‧評價用基板
W‧‧‧半導體晶圓
Wa、Waa、Wb、Wbb‧‧‧半導體元件
Ws‧‧‧半導體晶圓的主面
圖1是第1實施方式所涉及的接著片的概略剖面圖。
圖2是表示第1實施方式所涉及的半導體裝置的製造方法中的一製程的剖面圖。
圖3是表示圖2的後續製程的剖面圖。
圖4是表示圖3的後續製程的剖面圖。
圖5是本實施方式所涉及的半導體裝置的概略剖面圖。
圖6是本實施方式所涉及的其他半導體裝置的概略剖面圖。
圖7是本實施方式所涉及的其他半導體裝置的概略剖面圖。
以下，一邊參照圖示一邊對實施方式進行詳細說明。然而，在下述說明中，對相同或相當部分賦予相同符號，並省略重複的說明。此外，只要沒有特別說明，則上下左右等位置關係是根據圖面所示的位置關係。而且，圖面的尺寸比例並不限於圖示比例。
<接著片>
圖1是第1實施方式所涉及的接著片的概略剖面圖。如圖1所示，接著片1具有於基材2上積層有接著劑層4的構成。如下所述，設想接著片1在製造半導體裝置時，在積層製程中，貼附在半導體晶圓的電路面的背面。
接著劑層4的80℃下的熔融黏度為300Pa．s~3000Pa．s，較佳為500Pa．s~2900Pa．s，更佳為1000Pa．s~2800Pa．s，進一步較佳為1000Pa．s~2000Pa．s，最佳為1000Pa．s~1500Pa．s。熔融黏度例如可以使用旋轉式黏彈性測定裝置來測定。
接著劑層4的黏性強度在30℃下較佳為0~1000gf，更佳為0~500gf。黏性強度是利用探針(probe)法測定所得的值。具體而言，黏性強度是使用雙面膠帶將接著片的接著劑層張貼在平行的玻璃板上，並自接著片剝離基材膜。然後，將其放在30℃的 熱板上，並以下述條件將探針按壓在接著劑層的表面，並且測定從接著劑層拉離探針時的強度所得的值。此外，黏性強度是在試驗速度：5mm/分鐘、初期荷重(初載)：100gf/cm2、加壓時間：1.0秒的條件下測定出。
若接著劑層4的黏性強度超過500gf，則所得的接著劑層的室溫下的表面黏著性變高，操作性有變差的傾向。
接著劑層4的厚度較佳為5μm~150μm，更佳為20μm~60μm。若該厚度不足5μm，則存在著應力緩和效果或接著性變得不足的傾向；若該厚度超過150μm，則不夠經濟。
接著劑層4包括樹脂組成物，所述樹脂組成物包含：(A)高分子量成分、(B1)軟化點不足50℃的熱硬化性成分、(B2)軟化點為50℃以上且100℃以下的熱硬化性成分、以及(C)軟化點為100℃以下的苯酚樹脂。以下，對樹脂組成物之各成分的具體例及各成分的含量進行敘述。
(A)高分子量成分
(A)高分子量成分(以下僅記作「(A)成分」。)是具有交聯性官能基的成分，例如可以列舉：具有交聯性官能基的聚醯亞胺樹脂、(甲基)丙烯酸系共聚物、胺基甲酸樹脂、聚苯醚(polyphenylene ether)樹脂、聚醚醯亞胺(polyetherimide)樹脂、苯氧樹脂、改質聚苯醚樹脂等，其中，較佳為具有交聯性官能基的(甲基)丙烯酸系共聚物。這些(A)成分可以單獨使用一種，也可以兩種以上組合使用。上述交聯性官能基可以存在於聚合物鏈中，也可以 存在於聚合物鏈末端。作為交聯性官能基的具體例子，可以列舉：環氧基、醇性羥基、酚性羥基、羧基等，其中，較佳為環氧基，可藉由使用(甲基)丙烯酸縮水甘油酯等含環氧基的單體將交聯性官能基導入至聚合物鏈。
作為(A)成分，較佳為含環氧基的(甲基)丙烯酸系共聚物，例如可以列舉：含環氧基的(甲基)丙烯酸酯共聚物、含環氧基的丙烯酸系橡膠等，更佳為含環氧基的(甲基)丙烯酸酯共聚物。丙烯酸系橡膠是以丙烯酸酯作為主要成分的橡膠，例如包含丙烯酸丁酯或丙烯酸乙酯和丙烯腈的共聚物等的橡膠。對聚合方法沒有特別限定，可以採用珠狀聚合(pearl polymerization)、溶液聚合等。
(A)成分的玻璃轉變溫度較佳為-50℃~50℃，更佳為-30℃~20℃。若高分子量成分的玻璃轉變溫度為-50℃以上，則成形為片狀膜(sheet film)後的黏性變低，因此操作性提高。而且，若高分子量成分的玻璃轉變溫度為50℃以下，則可以確保流動性。
對(A)成分的重量平均分子量(以下記作「Mw」。)沒有特別限定，但較佳為5萬~120萬，更佳為10萬~120萬，進一步較佳為30萬~90萬。若(A)成分的Mw為5萬以上，則成膜性變得良好；反之，若(A)成分的Mw為120萬以內，則流動性提高。此外，Mw是藉由凝膠滲透層析儀(gel permeation chromatography，GPC)進行測定，並使用根據標準聚苯乙烯的校準曲線進行換算而得到的值，泵使用株式會社日立製作所製、產 品名：L-6000，柱使用將日立化成工業株式會社製、產品名：Gelpack GL-R440、Gelpack GL-R450以及Gelpack GL-R400M(各自為10.7mm(直徑)×300mm)依序連接而成的柱，溶離液使用四氫呋喃(以下記作「THF」。)，對於將120mg試樣溶解於5ml的THF中所得到的樣品，可以1.75mL/分鐘的流速進行測定。
以100質量%的樹脂組成物為基準，(A)成分的含量為11質量%~12質量%。此外，以100質量%的樹脂組成物為基準，(A)成分的含量較佳為13質量%~20質量%，更佳為15質量%~18質量%，進一步較佳為15質量%~17質量%。
(B)熱硬化性成分
(B)熱硬化性成分可以較佳地使用在150℃以上反應而高分子量化的環氧樹脂，將(B1)軟化點不足50℃的熱硬化性成分(以下僅記作「(B1)成分」。)和(B2)軟化點為50℃以上且100℃以下的熱硬化性成分(以下僅記作「(B2)成分」。)混合使用。
環氧樹脂只要是硬化而具有接著作用的樹脂，則沒有特別限定。可以使用：雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂等二官能環氧樹脂；苯酚酚醛清漆型環氧樹脂或甲酚酚醛清漆型環氧樹脂等酚醛清漆型環氧樹脂等。此外，還可以使用多官能環氧樹脂、縮水甘油胺型環氧樹脂、含雜環的環氧樹脂或脂環式環氧樹脂等通常已知的環氧樹脂。
作為(B1)成分，例如可以較佳地使用酚醛清漆型環氧樹脂。作為(B2)成分，例如可以較佳地使用雙酚F型環氧樹脂。
以100質量%的樹脂組成物為基準，(B1)成分的含量為10質量%~20質量%。
以100質量%的樹脂組成物為基準，(B2)成分的含量為10質量%~20質量%。
(C)軟化點為100℃以下的苯酚樹脂
(C)軟化點為100℃以下的苯酚樹脂(以下僅記作「(C)成分」。)作為硬化劑而發揮作用。藉由將軟化點設為100℃以下，可以降低接著劑組成物的熔融黏度，而提高對基板或半導體晶片之凹凸部或引線的埋入性。此外，軟化點較佳為50℃~100℃。若使用的苯酚樹脂的軟化點低於50℃，則存在室溫下的作業性降低的傾向。
此外，作為(C)成分，較佳為使用如下樹脂：投入至85℃、85%RH的恒溫恒濕槽中48小時後的吸水率為2質量%以下，使用熱重量分析儀(TGA)測定出的350℃下的加熱質量減少率(升溫速率：5℃/分鐘，環境氣體：氮)不足5質量%的苯酚樹脂。
在本實施方式中，可以適合用作硬化劑的苯酚樹脂還可以市售品的形式獲取。例如，可以列舉：三井化學(株)製的商品名「MIREX XLC-系列」及「MIREX XL-系列」、大日本油墨化學工業(株)製的商品名「Phenolite LF-4871」。其中，就可將硬化時的交聯密度控制得較低的觀點而言，較佳為具有較低的軟化點的「MIREX XLC-系列」(軟化點為70℃)。此外，在本發明中， 作為環氧樹脂硬化劑的苯酚樹脂也包括在硬化劑中。
以100質量%的樹脂組成物為基準，(C)成分的含量為15質量%~30質量%。
(D)填料
對(D)填料沒有特別限定，較佳為無機填料，例如可以使用：氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鋁、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁鬚晶、氮化硼、結晶性氧化矽及非晶質氧化矽。上述填料可以單獨使用一種或是將兩種以上混合使用，特別是若沒有問題則可以不添加。以100質量%的樹脂組成物為基準，(D)填料的含量較佳為0~0.15質量%。
就導熱性提高的觀點而言，較佳為使用氧化鋁、氮化鋁、氮化硼、結晶性氧化矽及非晶質氧化矽。此外，就溶液濃度的調整以及觸變(thixotropic)性的賦予的觀點而言，較佳為使用氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、結晶性氧化矽及非晶質氧化矽。此外，就切割性提高的觀點而言，較佳為使用氧化鋁或氧化矽。
(D)填料的平均粒徑較佳為0.005μm~2.0μm。若平均粒徑小於0.005μm或超過2.0μm，則存在接著片的接著性降低的可能性。為了得到良好的成膜性和高接著力，(D)填料的平均粒徑更佳為0.005μm~1.5μm，進一步較佳為0.005μm~1.0μm。
此外，有關本實施方式的接著片1，藉由更包含(E)硬化促進劑或(F)偶合劑(coupling agent)，而成為接著性及連接 可靠性更加優異者。
(E)硬化促進劑
(E)硬化促進劑並沒有特別限定，例如可以列舉：1,8-二氮雜雙環[5.4.0]十一烯-7、1,5-二氮雜雙環[4.3.0]壬烯-5、5,6-二丁基胺基-1,8-二氮雜雙環[5.4.0]十一烯-7等環脒化合物以及對這些化合物加成馬來酸酐、1,4-苯醌、2,5-甲苯醌、1,4-萘醌、2,3-二甲基苯醌、2,6-二甲基苯醌、2,3-二甲氧基-5-甲基-1,4-苯醌、2,3-二甲氧基-1,4-苯醌、苯基-1,4-苯醌等醌化合物、重氮苯基甲烷、苯酚樹脂等具有π鍵的化合物而形成的具有分子內分極的化合物；苄基二甲基胺、三乙醇胺、二甲基胺基乙醇、三(二甲基胺基甲基)苯酚等三級胺類以及這些的衍生物；1-氰基乙基-2-苯基咪唑、2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、2-十七烷基咪唑等咪唑類以及這些的衍生物；三丁基膦、甲基二苯基膦、三苯基膦、三(4-甲基苯基)膦、二苯基膦、苯基膦等有機膦類以及對這些膦類加成馬來酸酐、上述醌化合物、重氮苯基甲烷、苯酚樹脂等具有π鍵的化合物而形成的具有分子內分極的磷化合物；四苯基鏻四苯基硼酸鹽、四苯基鏻乙基三苯基硼酸鹽、四丁基鏻四丁基硼酸鹽等四取代鏻．四取代硼酸鹽、2-乙基-4-甲基咪唑．四苯基硼酸鹽、N-甲基嗎啉．四苯基硼酸鹽等四苯基硼鹽以及這些的衍生物。這些硬化促進劑可以單獨使用一種或是將兩種以上組合使用。其中，作為硬化促進劑，較佳為包含咪唑類。以100質量%的樹脂組成物為基準，(E)硬化促進劑的含量較佳為28質量%~38質量%。
(F)偶合劑
藉由含有(F)偶合劑，可以提高樹脂組成物中的異種材料間的界面結合。作為偶合劑，可以列舉：矽烷系偶合劑、鈦酸酯系偶合劑、鋁系偶合劑，其中，較佳為矽烷系偶合劑。
作為矽烷系偶合劑的具體例，可以列舉：乙烯基三氯矽烷、乙烯基三乙氧基矽烷、乙烯基三(β-甲氧基乙氧基)矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、β-(3,4-環氧基環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二甲氧基矽烷、乙烯基三乙醯氧基矽烷、γ-巰基丙基三甲氧基矽烷、γ-胺基丙基三甲氧基矽烷、γ-胺基丙基甲基二甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、γ-胺基丙基甲基二乙氧基矽烷、γ-苯胺基丙基三甲氧基矽烷、γ-苯胺基丙基三乙氧基矽烷、γ-(N,N-二甲基)胺基丙基三甲氧基矽烷、γ-(N,N-二乙基)胺基丙基三甲氧基矽烷、γ-(N,N-二丁基)胺基丙基三甲氧基矽烷、γ-(N-甲基)苯胺基丙基三甲氧基矽烷、γ-(N-乙基)苯胺基丙基三甲氧基矽烷、γ-(N,N-二甲基)胺基丙基三乙氧基矽烷、γ-(N,N-二乙基)胺基丙基三乙氧基矽烷、γ-(N,N-二丁基)胺基丙基三乙氧基矽烷、γ-(N-甲基)苯胺基丙基三乙氧基矽烷、γ-(N-乙基)苯胺基丙基三乙氧基矽烷、γ-(N,N-二甲基)胺基丙基甲基二甲氧基矽烷、γ-(N,N-二乙基)胺基丙基甲基二甲氧基矽烷、γ-(N,N-二丁基)胺基丙基甲基二甲氧基矽烷、γ-(N-甲基)苯胺基丙基甲基二甲氧基矽烷、γ-(N-乙基)苯胺基丙基甲基二甲氧基矽烷、N-(三 甲氧基甲矽烷基丙基)乙二胺、N-(二甲氧基甲基甲矽烷基異丙基)乙二胺、甲基三甲氧基矽烷、二甲基二甲氧基矽烷、甲基三乙氧基矽烷、γ-氯丙基三甲氧基矽烷、六甲基二矽烷、乙烯基三甲氧基矽烷、γ-巰基丙基甲基二甲氧基矽烷等。
接著，對有關本實施方式的接著片1的製造方法進行說明。首先，製備包括樹脂組成物的清漆(varnish)。清漆是藉由將構成樹脂組成物的各成分分別在有機溶劑中進行混合、混練而製備。上述混合、混練可適宜組合普通的攪拌機、擂潰機、三輥研磨機、球磨機等分散機來進行。
用於製備清漆的有機溶劑只要能夠均勻地溶解、混練或分散構成樹脂組成物的成分即可，並無限制，可以使用先前公知的有機溶劑。作為上述溶劑，例如可以列舉：二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯烷酮等醯胺系溶劑；丙酮、甲基乙基酮、環己酮等酮系溶劑；甲苯、二甲苯等烴系溶劑。就乾燥速度快、價格便宜的觀點而言，較佳為使用甲基乙基酮、環己酮。
有機溶劑較佳為在以所形成的樹脂組成物中的殘留揮發成分以總質量基準計成為0~1.0質量%的範圍中使用，由於擔心接著劑層4的起泡等引起的可靠性的降低，較佳為，以總質量基準計成為0~0.8質量%的範圍中使用。
接著，將在上述得到的各清漆分別均勻塗佈於基材膜上，形成清漆層。基材膜並無特別限定，例如可以使用聚酯膜、聚丙烯膜、聚對苯二甲酸乙二酯膜、聚醯亞胺膜、聚醚醯亞胺膜、 聚醚萘二甲酸膜、甲基戊烯膜等。對這些基材膜視需要亦可進行底漆(primer)塗佈、UV處理、電暈放電處理、研磨處理、蝕刻處理等表面處理。基材膜的厚度並無特別限定，可根據接著劑層4的厚度或接著片1的用途而適當選擇。
藉由塗佈各清漆並進行加熱乾燥，而得到包含第1接著劑層4a、第2接著劑層4b的各片材。此外，在接著劑層乾燥後去除基材膜，可以形成只由各接著劑層構成的接著片。對加熱乾燥的條件沒有特別限定，只要所使用的有機溶劑充分揮散即可，但通常在60~200℃下加熱0.1~90分鐘。經由上述製程，可以製作接著片1。
<半導體裝置的製造方法>
接下來，對使用上述接著片1製造半導體裝置的方法進行說明。圖2之(a)~圖2之(c)、圖3之(a)~圖3之(c)以及圖4之(a)~圖4之(c)是表示本實施方式所涉及的半導體裝置的製造方法中的一製程的製程剖面圖。
首先，如圖2之(a)及圖2之(b)所示，一邊對接著片1進行加熱加壓，一邊將其經由接著劑層4貼附在半導體晶圓W的主面Ws上(積層製程)。此外，半導體晶圓W的電路面是與主面S的相反側的面。貼附接著片1後，如圖2之(c)所示，剝離去除基材2。剝離去除基材2後，如圖3之(a)及圖3之(b)所示，在設置於半導體晶圓W的主面Ws上的接著劑層4上，經由黏著層10貼附切割片12，所述切割片12具有依序積層有基材 8和紫外線硬化型或壓敏型的黏著層10的構成。貼附切割片12後，如圖3之(c)所示，切割半導體晶圓W和接著劑層4。此時，可以連同黏著層10一起切割，也可以連同基材8一起切割至其途中。
切割後，如圖4之(a)所示，藉由對黏著層10照射紫外線(當為壓敏型時則不需要)，使黏著層10硬化，使接著劑層4與黏著層10之間的接著力降低。如圖4之(b)所示，從接著劑層4上剝離去除黏著層10和基材8，得到帶有接著劑層的半導體元件18(拾取製程)。帶有接著劑層的半導體元件18具有半導體元件Wa和接著劑層40。此外，半導體元件Wa是分割半導體晶圓W而得到的，接著劑層40是分別分割接著劑層4而得到的。得到帶有接著劑層的半導體元件18後，如圖4之(c)所示，藉由熱壓著將帶有接著劑層的半導體元件18經由接著劑層40接著於半導體元件搭載用的支撐構件14上(晶片黏著製程)。
於支撐構件14上搭載半導體元件Wa後，於110~125℃下對接著劑層40進行0.5~1小時的加熱(膜硬化製程)。接著，將半導體元件Wa和支撐構件14藉由引線接合在230℃下電性連接。此時，將半導體元件Wa、接著劑層40及支撐構件14例如在170℃下加熱15分鐘左右(引線接合製程)。此處，當多段積層半導體元件18時，重複進行上述製程。
即，再次藉由熱壓著將帶有接著劑層的半導體元件18經由接著劑層40接著於半導體元件Wa上。藉此，可以將多個半導 體元件Wa搭載於支撐構件14上。之後，反覆進行膜硬化、引線接合。如此一來，越是形成為多段，越是必須每次夾雜後硬化時間，因此當後硬化時間長時，生產效率大幅降低。
而且，雖然於支撐構件14的表面14a上形成樹脂密封材料，但也可以在與支撐構件14之表面14a相反側的面上形成樹脂密封材料。
藉由經過上述製程，可以使用接著片1製造半導體裝置。
本實施方式所涉及的接著片1藉由特定出接著劑組成物中所含的(A)、(B1)、(B2)及(C)成分以及其含量，可以使這些成分相輔相成，降低黏性強度或80℃下的熔融黏度。因此，可以提供良好的拾取性或晶片接合性，並且可以提高所得的半導體裝置的可靠性。此外，若使用本實施方式所涉及的接著片1製造半導體裝置，則即使在縮短了後硬化時間的情況下，也可以抑制引線接合時的起泡。因此，藉由使用本發明所涉及的接著片，可以一邊提高生產效率，一邊提供具備高可靠性的半導體裝置。
本實施方式所涉及的接著片1中，接著劑層在80℃下的熔融黏度為300Pa．s~3000Pa．s。此時，在晶片接合製程中，可以對形成於基板等的表面的凹凸之凹部充分良好地填充接著劑。因此，可以提高基板與半導體晶片之間的接著性，並可以進一步提高半導體裝置的可靠性。
使用了本實施方式所涉及的接著片1且包括帶有接著劑層的半導體晶片的半導體裝置的製造方法的特徵在於包括：將帶 有接著劑層的半導體晶片18壓著在支撐構件14上，之後在110℃~125℃下對接著劑層40進行0.5小時~1小時的加熱的膜硬化製程；以及將帶有接著劑層的半導體晶片與支撐構件14經由接合引線而在230℃以下電性連接的引線接合製程。根據該製造方法，與使用了習知的接著片的情況相比，後硬化時間短，從而可以提高半導體裝置的生產效率。
<半導體裝置>
接下來，對藉由上述半導體裝置的製造方法所製造的半導體裝置100進行說明。圖5是本實施方式所涉及的半導體裝置的概略剖面圖。圖5所示的半導體裝置100具備：半導體元件搭載用的支撐構件14、以及設在支撐構件14上的多個(例如兩個)半導體元件Wa。支撐構件14與半導體元件Wa經由接著劑層40接著著。此外，半導體元件Wa、Wa彼此之間也經由接著劑層40接著著。支撐構件14包括形成有電路圖案74及端子76的基板70。該電路圖案74與半導體元件Wa藉由金引線等引線78分別電連接著。而且，樹脂製的密封材料80設置在支撐構件14的表面14a上，藉此將半導體元件Wa、接著劑層4、電路圖案74及引線78密封。此外，密封材料80還可以設置在與支撐構件14之表面14a相反側的面上。
半導體裝置100是藉由上述之本實施方式所涉及的半導體裝置的製造方法，並使用接著片1製造而成。因此，對起因於形成於支撐構件14之表面14a上的電路圖案74的凹凸之凹部充 分良好地填充有接著劑層4。因此，可以提高半導體裝置100的可靠性。
以上，對實施方式進行了詳細說明，但本發明並不受上述實施方式的限定。
例如，在上述實施方式中，可以使用不具備基材2、8的接著片1。即，接著片可以設為包括第1接著劑層4a及第1接著劑層4b的片，也可以是包括第1接著劑層4a、第1接著劑層4b以及黏著層10組成的片，亦可設為包括單層的黏接著劑層的片。
使用本實施方式所涉及的接著片1所製造的半導體裝置並不限於半導體裝置100。圖6是另一實施方式所涉及的半導體裝置的概略剖面圖。圖6所示的半導體裝置200具備：半導體元件搭載用的支撐構件14、設在支撐構件14上的半導體元件Waa、經由接著劑層40與半導體元件Waa接著的半導體元件Wa。支撐構件14與半導體元件Waa經由接著劑41接著著。作為接著劑41，只要是由能夠將半導體元件Waa與支撐構件14接著的物質構成即可。支撐構件14包括形成有電路圖案84、電路圖案94的基板90。電路圖案84與半導體元件Waa藉由金引線等引線88電連接著，半導體元件Waa及引線78藉由接著劑層40密封著。
在半導體裝置200中，對起因於引線88及電路圖案84的凹凸之凹部充分良好地埋入有接著劑層40。此外，藉由接著劑層40可以防止半導體元件Wa與引線88接觸。藉此，可以提高半導體裝置的可靠性。此外，在半導體裝置200中，藉由接著劑層 40可以將半導體元件Waa與引線88一次性密封。
此外，作為使用本實施方式所涉及的接著片1所製造的半導體裝置，還可以列舉以下所示的半導體裝置400。圖7之(b)所示的半導體裝置400是於評價用基板30上壓著有經個片化的晶片(第二段的半導體元件Wb+接著劑層40)的裝置，而且是按照以下步驟所製造。首先，在70℃下將上述接著片1的接著劑層40(厚度為60μm)貼在厚度為50μm的半導體晶圓(尺寸：8英寸)上。接下來，將這些切割成7.5mm見方，從而得到接著有接著劑層40的半導體元件(晶片)Wb(參照圖7之(a))。
然後，如圖7之(a)所示，在120℃、0.10MPa、1秒鐘的條件下將經個片化的半導體元件Wb的接著劑層40壓著在評價用基板300上，藉此得到半導體裝置400。此外，在圖7所示的評價用基板300中，第一段的半導體元件Wbb藉由接著劑41與支撐構件14接著。支撐構件14包括形成有電路圖案104的基板90。作為接著劑41，只要由可以將半導體元件Wbb與支撐構件14接著的物質構成即可。例如可以使用日立化成工業(株)製的膜狀接著劑FH-900-20。此外，半導體元件Wbb上連接有引線98。引線98連接在相對的兩邊，例如在各邊上以225μm的間隔配置有32根。
以下，藉由實施例來詳細說明本發明，但本發明並不受這些實施例的限定。
<接著片的製作>
在實施例1、實施例2及比較例1~3中，使用表1所示的成分，按照以下步驟製備包括接著劑組成物的清漆。首先，調配(B1)成分、(B2)成分及(D)填料後，加入環己酮進行攪拌，接著加入(A)成分、(E)硬化促進劑及(F)偶合劑，並攪拌至各成分達到均勻為止，藉此得到接著劑組成物的清漆。
(A)高分子量成分(A)
丙烯酸系橡膠：長瀨精細化工(Nagase chemteX)株式會社製商品名，商品名「HTR-860P-3」，重量平均分子量為80萬，玻璃轉變溫度：-13℃
(B)熱硬化性成分(B1)
甲酚酚醛清漆型環氧樹脂：東都化成株式會社(株)製，商品名「YDCN-700-10」，環氧當量：210
(B)熱硬化性成分(B2)
雙酚F型環氧樹脂：DIC株式會社，商品名「EXA-830CRP」，環氧當量：159
(C)軟化點為100℃以下的苯酚樹脂(硬化劑)
苯酚樹脂：三井化學株式會社(株)製，商品名「MIREX XLC-LL」，軟化點：75℃，羥基當量：175
苯酚樹脂：大日本油墨化學工業(株)製，商品名「Phenolite LF-4871」，軟化點：130℃，羥基當量：118
(D)填料
氧化矽填料：Adomatex株式會社製，商品名「SC2050-HLG」，平 均粒徑為0.500μm
(E)硬化促進劑
1-氰基乙基-2-苯基咪唑Curezol：四國化成工業株式會社(株)製，商品名「2PZ-CN」
(F)偶合劑
γ-巰基丙基三甲氧基矽烷：日本UNIKA株式會社製，商品名「NUC A-189」
γ-脲基丙基三乙氧基矽烷：日本UNIKA株式會社製，商品名「NUC A-1160」
接著，將上述清漆塗佈於基材膜上、即厚38μm的經脫模處理的聚對苯二甲酸乙二酯膜上，於140℃下在基材膜上加熱乾燥5分鐘，製作接著片(厚40μm)。
<接著片的評價>
以如下方式評價在實施例1、實施例2及比較例1~3所製作的接著片的特性。
(1)熔融黏度的測定
使用旋轉式黏彈性測定裝置(TA INSTRUMENT JAPAN株式會社(株)，ARES-RDA)測定實施例1、實施例2及比較例1~3的接著片的接著劑層的熔融黏度。具體步驟如下所示。首先，從接著片1上剝離基材膜2，之後將接著劑層4在70℃下多枚層壓而貼合，以使膜厚達到100μm以上，並沖出成直徑為8mm的圓形。用兩片同樣為8mm的治具夾住所製作的圓形膜，從而製作樣品，並進行了測定(以測定條件：頻率：1Hz、測定開始溫度：35℃、測定結束溫度：150℃、升溫速度：5℃/分鐘的測定條件下進行測定，讀取80℃的值)。將結果示於表2。
(2)引線埋入性
於表面塗布有Al的150μm厚的半導體晶圓的背面貼附FH-900-25(日立化成工業製)，並使用切割機(DISCO製DFD-6361)將其切割成7.5mm×7.5mm。使用可撓式晶片接合機((株)Lunesass東日本Semiconductor製DB730SP)在150℃/0.04MPa/1秒鐘下進行熱壓著。使用引線接合機((株)新川製UTC-230BI)形成柱凸塊(Stud Bump)，使用彈性體貼附機((株)Lunesass東日本Semiconductor製，商品名「ES-10」)，在r.t./3.2kgf(50g/凸塊)/3秒下使凸塊調平(leveling)。使用引線接合機進行接合，製成引線埋入性評價用基板。在70℃下於100μm厚的半導體晶圓上積層接著片1，並使用切割機切割成7.5mm×7.5mm。接著，使用可撓式晶片接合機在120℃/0.1MPa/1秒下進行熱壓著，而製作評價用樣品。使用真空蒸鍍機((株)真空device製VE2030)對上述評價 用樣品進行碳蒸鍍。使用環境控制型掃描電子顯微鏡((株)飛利浦製，商品名「LC30」)，從傾斜15°的角度觀察引線埋入部分，並評價埋入性。埋入性良好的樣品判斷為「○」，埋入性差的樣品判斷為「×」。測定結果示於表2。
(3)接著強度的測定
利用下述方法測定接著劑層的模具剪切(die shear)強度(接著強度)。首先，在70℃下將接著片的接著劑層貼附在厚度為400μm的半導體晶圓上。接下來，將這些切割成5mm見方，而得到帶有接著劑層的半導體晶片。在120℃/0.1MPa/5秒的條件下將經個片化的帶有接著劑層的半導體晶片的接著劑層側熱壓著在引線框架(大日本印刷(株)製，商品名「42alloy LF810TR」)上。接下來，在烘箱中進行110℃/1小時+170℃/3小時的階段式硬化，以使晶片接合膜完全硬化。使用萬能接合測試機(Dage公司製，4000系列)，在6.7MPa/秒、250℃的溫度條件下測定模具剪切強度，將其作為接著強度。測定結果如表2所示。
(4)絕緣可靠性試驗(HAST：highly Accelerated Storage Test)使用壓著機在100℃、壓力為2kgf、貼附時間為10秒的條件下將切出的膜(5mm×12mm)貼在電蝕試驗用基板(蝕刻ESPANEX上的銅箔所形成的梳形圖案(未鍍金，線長30μm，間隔70μm))上。將其在170℃下硬化5小時而成者作為樣品。硬化後，將樣品放在加速壽命試驗裝置(HIRAYAMA製，商品名+「PL-422R8」，條件：130℃/85%/100小時)中，測定絕緣電阻。 作為評價方法，在20小時以內變成106Ω以下的樣品記作「×」，在50小時以上且100小時以內變成106Ω以下的樣品記作「△」，保持106Ω以上100小時以上的樣品記作「○」，測定結果示於表2。
(5)黏性強度力的測定試驗
利用探針法測定實施例1、實施例2及比較例1~3的接著劑層片的黏性強度，具體而言，首先，使用雙面膠帶將接著片的接著劑層張貼在平行的玻璃板上。接著，自接著片剝離基材膜，並放置在30℃的熱板上，並且在下述條件下將探針按壓在接著劑層的表面，測定自接著劑層拉離探針時的強度作為黏性強度。測定結果示於表2。
試驗速度：5mm/分鐘
加壓時間：1.0秒
初期荷重(初載)：200gf
(6)起泡試驗
首先，在70℃下將接著片積層在厚度為100μm的半導體晶圓上，並小片化成10mm×10mm。將帶有該經小片化的接著片的晶片在120℃/0.1MPa/1秒的條件下壓著在厚度為625μm的半導體晶圓上，在110℃下進行1小時的熱硬化後，在200℃下在熱板上施加與引線接合熱相當的熱達10分鐘。之後，使用超聲波探查裝置(SAT)(日立建機(株)製，商品名「HYE-FOCUS」)評價是否起泡。將沒有起泡的樣品記作「○」，將發現起泡的樣品記作「×」。將如上述般進行了測定的結果示於表2。
根據本發明，可以提供如下接著片：能夠一邊提高生產效率，一邊實現埋入性及拾取性良好且具有高可靠性的半導體裝置。
1‧‧‧接著片
2‧‧‧基材
4‧‧‧接著劑層

Claims (3)

  1. 一種接著片，其特徵在於：包括樹脂組成物，所述樹脂組成物包含：(A)高分子量成分、(B1)軟化點不足50℃的熱硬化性成分、(B2)軟化點為50℃以上且100℃以下的熱硬化性成分、以及(C)軟化點為100℃以下的苯酚樹脂，該接著片以100質量%的該樹脂組成物為基準，含有11質量%~22質量%的上述(A)高分子量成分、10質量%~20質量%的上述(B1)軟化點不足50℃的熱硬化性成分、10質量%~20質量%的上述(B2)軟化點為50℃以上且100℃以下的熱硬化性成分、以及15質量%~30質量%的上述(C)軟化點為100℃以下的苯酚樹脂。
  2. 如申請專利範圍第1項所述的接著片，其在80℃下的熔融黏度為300Pa．s~3000Pa．s。
  3. 一種半導體裝置的製造方法，其特徵在於：其是使用了如申請專利範圍第1項或第2項所述的接著片且包括帶有接著劑層的半導體晶片的半導體裝置的製造方法，其中包括：膜硬化製程，將上述帶有接著劑層的半導體晶片壓著在電路基板上，之後在110℃~125℃下對上述接著劑層進行0.5小時~1小時的加熱；以及引線接合製程，將上述帶有接著劑層的半導體晶片與電路基板經由接合引線而在230℃以下電性連接。
TW102108050A 2012-03-08 2013-03-07 接著片及半導體裝置的製造方法 TWI485225B (zh)

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