CN104169383A - 粘接片材及半导体装置的制造方法 - Google Patents

粘接片材及半导体装置的制造方法 Download PDF

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Publication number
CN104169383A
CN104169383A CN201380012784.3A CN201380012784A CN104169383A CN 104169383 A CN104169383 A CN 104169383A CN 201380012784 A CN201380012784 A CN 201380012784A CN 104169383 A CN104169383 A CN 104169383A
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Prior art keywords
bond layer
adhesive sheet
semiconductor device
softening temperature
quality
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CN201380012784.3A
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CN104169383B (zh
Inventor
小玉惠
德安孝宽
岩仓哲郎
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Lishennoco Co ltd
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Hitachi Chemical Co Ltd
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Priority to CN201610329897.1A priority Critical patent/CN106024654B/zh
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Abstract

本发明的粘接片材由包含(A)高分子量成分、(B1)软化点低于50℃的热固化性成分、(B2)软化点为50℃以上且100℃以下的热固化性成分、和(C)软化点为100℃以下的酚醛树脂的树脂组合物形成，并且以该树脂组合物100质量％为基准，含有11～22质量％的上述(A)高分子量成分、10～20质量％的上述(B1)软化点低于50℃的热固化性成分、10～20质量％的上述(B2)软化点为50℃以上且100℃以下的热固化性成分、15～30质量％的上述(C)软化点为100℃以下的酚醛树脂。

Description

粘接片材及半导体装置的制造方法
技术领域
本发明涉及粘接片材及由使用了粘接片材的带粘接剂层的半导体芯片构成的半导体装置的制造方法。
背景技术
近年来，将手机、便携音频设备用的存储器封装芯片以多级层叠而成的堆栈式MCP(Multi Chip Package，多芯片封装)正在普及。并且，伴随着图像处理技术及手机等的多功能化，这种封装的高集成化、高密度化及薄型化不断发展。作为用于制造那样的半导体装置的薄膜，可列举出例如专利文献1～5中记载的粘接片材。
现有技术文献
专利文献
专利文献1：日本特开2001-279197号公报
专利文献2：日本特开2002-222913号公报
专利文献3：日本专利第3913481号公报
专利文献4：日本特开2002-220576号公报
专利文献5：日本特开2004-072009号公报
发明内容
发明所要解决的课题
近年来，随着半导体晶片的薄膜化及布线的微细化等的发展，能够实现具备高可靠性的半导体装置那样的粘接薄膜的开发要求增高。特别是为了提高拾取工序时的操作性要求为低粘性，为了在芯片粘接工序时确保粘接剂向基板或半导体芯片的凹凸部、引线中的埋入性要求为低粘度。
可是，当使用低粘度的粘接薄膜来制造半导体装置时，为了抑制引线接合时的发泡而对粘接剂施加热的后固化工序成为必须。使用了低粘度的粘接薄膜的半导体装置一般可以通过以下那样的方法来进行制造。首先，在半导体晶片上贴附粘接片材后，进行切割而将半导体晶片单片化。接着，将所得到的半导体芯片从粘接片材剥离(拾取工序)并介由粘接剂压接到基板等上(芯片粘接工序)。接着，进行上述的后固化(薄膜固化工序)，然后将半导体芯片通过引线接合连接到基板上。进而根据需要反复进行边介由粘接剂粘接半导体芯片边进行层叠并将半导体芯片通过引线接合连接到基板上的工序。由此半导体芯片被多级层叠。并且，在将通过引线接合进行连接的工序全部结束后，将半导体芯片进行树脂密封。
然而，就上述专利文献1～5中记载的粘接薄膜而言，仅通过芯片粘接工序的低温/低载荷下的压接安装难以将粘接剂充分埋入到基板或半导体芯片、引线中。此外，由于为低粘度的薄膜，所以产生薄膜的粘合力强且为高粘性而无法利用拾取工序拾取这样的问题、为了抑制发泡必须反复进行薄膜固化工序而工序时间非常长这样的问题。
本发明是为了解决上述课题而完成的，目的在于提供可提高生产效率、并且埋入性及拾取性良好、能够实现具备高可靠性的半导体装置的粘接片材。
用于解决课题的方法
为了解决上述课题，本发明的一个方面的粘接片材的特征在于，其由包含(A)高分子量成分、(B1)软化点低于50℃的热固化性成分、(B2)软化点为50℃以上且100℃以下的热固化性成分、和(C)软化点为100℃以下的酚醛树脂的树脂组合物形成，并且以该树脂组合物100质量％为基准，含有11～22质量％的(A)高分子量成分、10～20质量％的(B1)软化点低于50℃的热固化性成分、10～20质量％的(B2)软化点为50℃以上且100℃以下的热固化性成分、15～30质量％的(C)软化点为100℃以下的酚醛树脂。
本发明的一个方面的粘接片材通过特别规定粘接剂组合物中所包含的(A)、(B1)、(B2)及(C)成分和/或其含量，从而能够使这些成分彼此相辅相成地降低粘性强度和/或80℃下的熔融粘度。因而，能够赋予良好的拾取性、芯片接合性，能够提高所得到的半导体装置的可靠性。此外，若使用该粘接片材来制造半导体装置，则即使在缩短后固化时间的情况下，也能够抑制引线接合时的发泡。因而，根据本发明的一个方面的粘接片材，能够提高生产效率，同时提供具备高可靠性的半导体装置。
此外，本发明的一个方面的粘接片材的粘接剂层在80℃下的熔融粘度也可以为300～3000Pa·s。这种情况下，在芯片接合工序中，对在基板等的表面形成的凹凸的凹部能够充分良好地填充粘接剂。因而，能够提高基板与半导体芯片之间的粘接性，能够进一步提高半导体装置的可靠性。
本发明的一个方面的半导体装置的制造方法的特征在于，其是由使用了上述粘接片材的带粘接剂层的半导体芯片构成的半导体装置的制造方法，其具备以下工序：将带粘接剂层的半导体芯片压接到电路基板上，然后对粘接剂层进行110～125℃、0.5～1小时的加热的薄膜固化工序；和将带粘接剂层的半导体芯片与电路基板介由接合线在230℃以下进行电连接的引线接合工序。
根据上述制造方法，与使用以往的粘接片材时相比后固化时间短，能够提高半导体装置的生产效率。
发明效果
根据本发明，能够提供可提高生产效率、并且埋入性及拾取性良好、能够实现具备高可靠性的半导体装置的粘接片材。
附图说明
图1是第1实施方式的粘接片材的概略剖面图。
图2是表示第1实施方式的半导体装置的制造方法中的一个工序的剖面图。
图3是表示后续于图2的工序的剖面图。
图4是表示后续于图3的工序的剖面图。
图5是本实施方式的半导体装置的概略剖面图。
图6是本实施方式的其它半导体装置的概略剖面图。
图7是本实施方式的其它半导体装置的概略剖面图。
具体实施方式
以下，边参照附图边对实施方式进行详细说明。另外，在以下的说明中，对相同或相当部分使用相同符号并省略重复的说明。此外，上下左右等位置关系只要没有特别说明，就基于附图所示的位置关系。此外，附图的尺寸比率并不限于图示的比率。
<粘接片材>
图1是第1实施方式的粘接片材的概略剖面图。如图1中所示的那样，粘接片材1具有在基材2上层叠了粘接剂层4的构成。如后述那样，设想粘接片材1在制造半导体装置时，在层压工序中，贴附在半导体晶片的电路面的背面。
粘接剂层4在80℃下的熔融粘度为300～3000Pa·s，优选为500～2900Pa·s，更优选为1000～2800Pa·s，进一步优选为1000～2000Pa·s，最优选为1000～1500Pa·s。熔融粘度例如可以使用旋转式粘弹性测定装置进行测定。
粘接剂层4的粘性强度在30℃下优选为0～1000gf，更优选为0～500gf。将粘性强度设为通过探针法测定的值。具体而言，将粘接片材的粘接剂层用双面胶带粘贴到平行的玻璃板上，将基材薄膜从粘接片材上剥离。然后，放置到30℃的热板上，将探针在下述条件下对粘接剂层的表面进行按压，测定将探针从粘接剂层拉离时的强度，将其值作为粘性强度。另外，粘性强度在测试速度：5mm/分钟、初始载荷(前负荷)：100gf/cm2、加压时间：1.0秒的条件下进行测定。
若粘接剂层4的粘性强度超过500gf，则存在所得到的粘接剂层的室温下的表面的粘合性变高、处理性变差的倾向。
粘接剂层4的厚度优选为5～150μm，更优选为20～60μm。若该厚度低于5μm，则存在应力缓和效果、粘接性变得不足的倾向，若超过150μm则变得不经济。
粘接剂层4由包含(A)高分子量成分、(B1)软化点低于50℃的热固化性成分、(B2)软化点为50℃以上且100℃以下的热固化性成分和(C)软化点为100℃以下的酚醛树脂的树脂组合物形成。以下，对树脂组合物的各成分的具体例子及各成分的含量进行叙述。
(A)高分子量成分
作为(A)高分子量成分(以下简记为“(A)成分”)，是具有交联性官能团的物质，例如可列举出具有交联性官能团的聚酰亚胺树脂、(甲基)丙烯酸共聚物、聚氨酯树脂聚苯醚树脂、聚醚酰亚胺树脂、苯氧树脂、改性聚苯醚树脂等，它们中，优选具有交联性官能团的(甲基)丙烯酸共聚物。这些(A)成分可以单独使用1种，也可以将2种以上组合使用。上述交联性官能团可以在聚合物链中具有，也可以在聚合物链末端具有。作为交联性官能团的具体例子，可列举出环氧基、醇性羟基、酚性羟基、羧基等，它们中，优选环氧基，可以通过使用(甲基)丙烯酸缩水甘油酯等含有环氧基的单体而导入到聚合物链中。
作为(A)成分，优选为含有环氧基的(甲基)丙烯酸共聚物，例如可列举出含有环氧基的(甲基)丙烯酸酯共聚物、含有环氧基的丙烯酸橡胶等，更优选含有环氧基的(甲基)丙烯酸酯共聚物。丙烯酸橡胶是以丙烯酸酯作为主要成分的物质，例如为由丙烯酸丁酯或丙烯酸乙酯与丙烯腈的共聚物等形成的橡胶。聚合方法没有特别限制，可以使用珠状聚合、溶液聚合等。
(A)成分的玻璃化转变温度优选为－50～50℃，更优选为－30～20℃。若高分子量成分的玻璃化转变温度为－50℃以上，则由于成形为片材薄膜后的粘性变低，所以处理性提高。另外，若高分子量成分的玻璃化转变温度为50℃以下，则能够确保流动性。
(A)成分的重均分子量(以下记为“Mw”)没有特别限定，但优选为5万～120万，更优选为10万～120万，进一步优选为30万～90万。若(A)成分的Mw为5万以上，则成膜性变得良好，相反若(A)成分的Mw为120万以内，则流动性提高。另外，Mw是通过凝胶渗透色谱法(GPC)进行测定，并使用基于标准聚苯乙烯的标准曲线换算而得到的值，作为泵使用株式会社日立制作所制的制品名：L-6000，作为柱使用将日立化成工业株式会社制的制品名：Gelpack GL-R440、Gelpack GL-R450及GelpackGL-R400M(各10.7mm(直径)×300mm)依次连接而成的柱，作为洗脱液使用四氢呋喃(以下称为“THF”)，对于将试样120mg溶解到THF：5ml中而得到的样品，可以以1.75mL/分钟的流速进行测定。
以树脂组合物100质量％为基准，(A)成分的含量为11～22质量％。另外，以树脂组合物100质量％为基准，(A)成分的含量优选为13～20质量％，更优选为15～18质量％，进一步优选为15～17质量％。
(B)热固化性成分
(B)热固化性成分可以优选使用在150℃以上进行反应而高分子量化的环氧树脂，将(B1)软化点低于50℃的热固化性成分(以下简记为“(B1)成分”)与(B2)软化点为50℃以上且100℃以下的热固化性成分(以下简记为“(B2)成分”)混合使用。
环氧树脂只要是固化后具有粘接作用的环氧树脂就没有特别限定。可以使用双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂等双官能环氧树脂、苯酚酚醛清漆型环氧树脂、甲酚酚醛清漆型环氧树脂等酚醛清漆型环氧树脂等。另外，还可以适用多官能环氧树脂、缩水甘油胺型环氧树脂、含杂环的环氧树脂或脂环式环氧树脂等通常所知的环氧树脂。
作为(B1)成分，例如可以优选使用酚醛清漆型环氧树脂。作为(B2)成分，例如可以优选使用双酚F型环氧树脂。
以树脂组合物100质量％为基准，(B1)成分的含量为10～20质量％。
以树脂组合物100质量％为基准，(B2)成分的含量为10～20质量％。
(C)软化点为100℃以下的酚醛树脂
(C)软化点为100℃以下的酚醛树脂(以下简记为“(C)成分”)作为固化剂发挥功能。通过使软化点为100℃以下，能够使粘接剂组合物的熔融粘度降低，提高向基板或半导体芯片的凹凸部、引线中的埋入性。此外，软化点优选为50～100℃。若所使用的酚醛树脂的软化点变得低于50℃，则存在室温下的操作性降低的倾向。
此外，作为(C)成分，优选使用在85℃、85％RH的恒温恒湿槽中投入48小时后的吸水率为2质量％以下、且用热重量分析计(TGA)测定的350℃下的加热质量减少率(升温速度：5℃/分钟，气氛：氮)低于5质量％的酚醛树脂。
本实施方式中可适宜作为固化剂使用的酚醛树脂也可以以市售品形式获得。例如可列举出三井化学株式会社制的商品名“MILEX XLC-系列”及“MILEX XL-系列”、大日本油墨化学工业株式会社制的商品名“PHENOLITE LF-4871”。其中，从能够更低地控制固化时的交联密度的方面出发，具有更低的软化点的“MILEX XLC-LL”(软化点为70℃)是适合的。另外，本发明中，作为环氧树脂固化剂的酚醛树脂也包括在固化剂内。
以树脂组合物100质量％为基准，(C)成分的含量为15～30质量％。
(D)填料
作为(D)填料，没有特别限制，优选无机填料，例如可以使用氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、氮化铝、硼酸铝晶须、氮化硼、结晶性二氧化硅及非晶性二氧化硅。它们可以单独使用1种或将2种以上混合使用，若没有特别问题则也可以不添加。以树脂组合物100质量％为基准，(D)填料的含量优选为0～0.15质量％。
从提高导热性的观点出发，优选使用氧化铝、氮化铝、氮化硼、结晶性二氧化硅或非晶性二氧化硅。此外，从熔融粘度的调整、触变性的赋予的角度出发，优选使用氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、结晶性二氧化硅或非晶性二氧化硅。此外，从提高切割性的观点出发，优选使用氧化铝或二氧化硅。
(D)填料的平均粒径优选为0.005～2.0μm。若平均粒径低于0.005μm或超过2.0μm则有可能粘接片材的粘接性降低。为了得到良好的成膜性和高的粘接力，(D)填料的平均粒径更优选为0.005～1.5μm，进一步优选为0.005～1.0μm。
此外，本实施方式的粘接片材1通过进一步包含(E)固化促进剂或(F)偶联剂，使粘接性及连接可靠性变得更优异。
(E)固化促进剂
作为(E)固化促进剂，没有特别限制，例如可列举出1,8-二氮杂双环[5.4.0]十一碳烯-7、1,5-二氮杂双环[4.3.0]壬烯-5、5,6-二丁基氨基-1,8-二氮杂双环[5.4.0]十一碳烯-7等环脒化合物及在这些化合物上加成马来酸酐、1,4-苯醌、2,5-甲苯醌、1,4-萘醌、2,3-二甲基苯醌、2,6-二甲基苯醌、2,3-二甲氧基-5-甲基-1,4-苯醌、2,3-二甲氧基-1,4-苯醌、苯基-1,4-苯醌等醌化合物、重氮苯基甲烷、酚醛树脂等具有π键的化合物而成的具有分子内极化的化合物、苄基二甲基胺、三乙醇胺、二甲基氨基乙醇、三(二甲基氨基甲基)苯酚等叔胺类及它们的衍生物、1-氰基乙基-2-苯基咪唑、2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、2-十七烷基咪唑等咪唑类及它们的衍生物、三丁基膦、甲基二苯基膦、三苯基膦、三(4-甲基苯基)膦、二苯基膦、苯基膦等有机膦类及在这些膦类上加成马来酸酐、上述醌化合物、重氮苯基甲烷、酚醛树脂等具有π键的化合物而成的具有分子内极化的磷化合物、四苯基鏻四苯基硼酸盐、四苯基鏻乙基三苯基硼酸盐、四丁基鏻四丁基硼酸盐等四取代鏻·四取代硼酸盐、2-乙基-4-甲基咪唑·四苯基硼酸盐、N-甲基吗啉·四苯基硼酸盐等四苯基硼盐及它们的衍生物。这些固化促进剂可以单独使用1种或将2种以上组合使用。它们中，作为固化促进剂，优选包含咪唑类。以树脂组合物100质量％为基准，(E)固化促进剂的含量优选为28～38质量％。
(F)偶联剂
通过含有(F)偶联剂，能够提高树脂组合物中的异种材料间的界面结合。作为偶联剂，可列举出硅烷系偶联剂、钛酸酯系偶联剂、铝系偶联剂，它们中，优选硅烷系偶联剂。
作为硅烷系偶联剂的具体例子，可列举出乙烯基三氯硅烷、乙烯基三乙氧基硅烷、乙烯基三(β-甲氧基乙氧基)硅烷、γ-甲基丙烯酰氧基丙基三甲氧基硅烷、β-(3,4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二甲氧基硅烷、乙烯基三乙酰氧基硅烷、γ-巯基丙基三甲氧基硅烷、γ-氨基丙基三甲氧基硅烷、γ-氨基丙基甲基二甲氧基硅烷、γ-氨基丙基三乙氧基硅烷、γ-氨基丙基甲基二乙氧基硅烷、γ-苯胺基丙基三甲氧基硅烷、γ-苯胺基丙基三乙氧基硅烷、γ-(N,N-二甲基)氨基丙基三甲氧基硅烷、γ-(N,N-二乙基)氨基丙基三甲氧基硅烷、γ-(N,N-二丁基)氨基丙基三甲氧基硅烷、γ-(N-甲基)苯胺基丙基三甲氧基硅烷、γ-(N-乙基)苯胺基丙基三甲氧基硅烷、γ-(N,N-二甲基)氨基丙基三乙氧基硅烷、γ-(N,N-二乙基)氨基丙基三乙氧基硅烷、γ-(N,N-二丁基)氨基丙基三乙氧基硅烷、γ-(N-甲基)苯胺基丙基三乙氧基硅烷、γ-(N-乙基)苯胺基丙基三乙氧基硅烷、γ-(N,N-二甲基)氨基丙基甲基二甲氧基硅烷、γ-(N,N-二乙基)氨基丙基甲基二甲氧基硅烷、γ-(N,N-二丁基)氨基丙基甲基二甲氧基硅烷、γ-(N-甲基)苯胺基丙基甲基二甲氧基硅烷、γ-(N-乙基)苯胺基丙基甲基二甲氧基硅烷、N-(三甲氧基甲硅烷基丙基)乙二胺、N-(二甲氧基甲基甲硅烷基异丙基)乙二胺、甲基三甲氧基硅烷、二甲基二甲氧基硅烷、甲基三乙氧基硅烷、γ-氯丙基三甲氧基硅烷、六甲基二硅烷、乙烯基三甲氧基硅烷、γ-巯基丙基甲基二甲氧基硅烷等。
接着，对本实施方式的粘接片材1的制造方法进行说明。首先，制备由树脂组合物构成的清漆。清漆通过将构成树脂组合物的各成分分别在有机溶剂中混合、混炼来制备。上述混合、混炼可以将通常的搅拌机、研磨机(Raikai mixer)、三辊混炼机、球磨机等分散机适当组合来进行。
用于制备清漆的有机溶剂只要是能够将构成树脂组合物的成分均匀地溶解、混炼或分散的有机溶剂就没有限制，可以使用以往公知的有机溶剂。作为这样的溶剂，例如可列举出二甲基甲酰胺、二甲基乙酰胺、N-甲基吡咯烷酮等酰胺系溶剂；丙酮、甲乙酮、环己酮等酮系溶剂；甲苯、二甲苯等烃系溶剂。从干燥速度快、价格便宜的角度出发，优选使用甲乙酮、环己酮。
有机溶剂优选在所形成的树脂组合物中的残存挥发成分以总质量基准计达到0～1.0质量％那样的范围内使用，从对因粘接剂层4的发泡等而导致的可靠性降低的担心出发，优选在以总质量基准计达到0～0.8质量％的范围内使用。
接着，将如上得到的各清漆分别均匀地涂抹到基材薄膜上，形成清漆的层。作为基材薄膜，没有特别限制，例如可使用聚酯薄膜、聚丙烯薄膜、聚对苯二甲酸乙二醇酯薄膜、聚酰亚胺薄膜、聚醚酰亚胺薄膜、聚醚萘二甲酸酯薄膜、甲基戊烯薄膜等。对于这些基材薄膜，还可以根据需要进行底漆涂布、UV处理、电晕放电处理、研磨处理、蚀刻处理等表面处理。基材薄膜的厚度没有特别限制，可根据粘接剂层4的厚度或粘接片材1的用途而适当选择。
通过涂抹各清漆并进行加热干燥，得到由第1粘接剂层4a、第2粘接剂层4b构成的各片材。另外，也可以在粘接剂层的干燥后除去基材薄膜，制成仅由各粘接剂层构成的粘接片材。加热干燥的条件只要是所使用的有机溶剂充分挥散的条件就没有特别限制，通常在60～200℃下加热0.1～90分钟来进行。经由以上的工序，可以制造粘接片材1。
<半导体装置的制造方法>
接着，对使用上述粘接片材1来制造半导体装置的方法进行说明。图2(a)～图2(c)、图3(a)～图3(c)及图4(a)～图4(c)是表示本实施方式的半导体装置的制造方法中的一个工序的工序剖面图。
首先，如图2(a)及图2(b)中所示的那样，在半导体晶片W的主表面Ws上，介由粘接剂层4边加压加热边贴附粘接片材1(层压工序)。另外，半导体晶片W的电路面为与主表面Ws相反一侧的面。贴附粘接片材1后，如图2(c)中所示的那样，将基材2剥离除去。将基材2剥离除去后，如图3(a)及图3(b)中所示的那样，在设置于半导体晶片W的主表面Ws上的粘接剂层4上，介由粘合层10贴附具有依次层叠有基材8和紫外线固化型或感压型的粘合层10的构成的切割片材12。贴附切割片材12后，如图3(c)中所示的那样，对半导体晶片W及粘接剂层4进行切割。此时，也可以将粘合层10一起切割，还可以连同基材8一起切割到中途。
在切割后，如图4(a)中所示的那样，通过对粘合层10照射紫外线(在感压型的情况下不需要)而使粘合层10固化，从而使粘接剂层4与粘合层10之间的粘接力降低。如图4(b)中所示的那样，将粘合层10及基材8从粘接剂层4上剥离除去，得到带粘接剂层的半导体元件18(拾取工序)。带粘接剂层的半导体元件18具有半导体元件Wa和粘接剂层40。另外，半导体元件Wa是将半导体晶片W进行分割而得到的，粘接剂层40是将粘接剂层4分别分割而得到的。得到带粘接剂层的半导体元件18后，如图4(c)中所示的那样，将带粘接剂层的半导体元件18通过热压接介由粘接剂层40粘接到半导体元件搭载用的支撑部件14上(芯片粘接工序)。
将半导体元件Wa搭载到支撑部件14上后，对粘接剂层40进行110～125℃、0.5～1小时的加热(薄膜固化工序)。
接着，将半导体元件Wa与支撑部件14通过引线接合在230℃以下进行电连接。此时，半导体元件Wa、粘接剂层40及支撑部件14例如在170℃下被加热15分钟左右(引线接合工序)。其中，在多级地层叠半导体元件18的情况下将上述工序反复进行。
即，再次将带粘接剂层的半导体元件18通过热压接介由粘接剂层40粘接到半导体元件Wa上。由此，能够将多个半导体元件Wa搭载到支撑部件14上。之后，反复进行薄膜固化、引线接合。这样，越变得多级，则越变得必须每次夹入后固化时间，所以在后固化时间长的情况下生产率大幅降低。
此外，在支撑部件14的表面14a上形成树脂密封材料，但也可以在支撑部件14的与表面14a相反一侧的面上形成树脂密封材料。
通过经由以上的工序，能够使用粘接片材1来制造半导体装置。
本实施方式的粘接片材1通过特别规定粘接剂组合物中所包含的(A)、(B1)、(B2)及(C)成分和/或其含量，从而能够使这些成分彼此相辅相成地能够降低粘性强度和/或80℃下的熔融粘度。因而，能够赋予良好的拾取性、芯片接合性，能够提高所得到的半导体装置的可靠性。此外，若使用本实施方式的粘接片材1来制造半导体装置，则即使在缩短后固化时间的情况下，也能够抑制引线接合时的发泡。因而，根据本发明的粘接片材，能够提供提高生产效率并且具备高可靠性的半导体装置。
本实施方式的粘接片材1的粘接剂层在80℃下的熔融粘度为300～3000Pa·s。这种情况下，在芯片接合工序中，对在基板等的表面形成的凹凸的凹部能够充分良好地填充粘接剂。因而，能够提高基板与半导体芯片之间的粘接性，能够进一步提高半导体装置的可靠性。
由使用了本实施方式的粘接片材1的带粘接剂层的半导体芯片构成的半导体装置的制造方法的特征在于，其具备以下工序：将带粘接剂层的半导体芯片18压接到支撑部件14上后，对粘接剂层40进行110～125℃、0.5～1小时的加热的薄膜固化工序；和将带粘接剂层的半导体芯片与支撑部件14介由接合线在230℃以下进行电连接的引线接合工序。根据该制造方法，与使用以往的粘接片材时相比后固化时间短，能够提高半导体装置的生产效率。
<半导体装置>
接着，对通过上述的半导体装置的制造方法制造的半导体装置100进行说明。图5是本实施方式的半导体装置的概略剖面图。图5中所示的半导体装置100具备半导体元件搭载用的支撑部件14、和设置在支撑部件14上的多个(例如2个)半导体元件Wa。支撑部件14与半导体元件Wa介由粘接剂层40而粘接。另外，半导体元件Wa、Wa彼此也介由粘接剂层40而粘接。支撑部件14由形成有电路图案74及端子76的基板70构成。该电路图案74与半导体元件Wa利用金线等引线78而分别电连接。并且，通过将例如树脂制的密封材料80设置在支撑部件14的表面14a上，从而将半导体元件Wa、粘接剂层4、电路图案74及引线78密封。另外，密封材料80也可以设置在支撑部件14的与表面14a相反一侧的面上。
半导体装置100是通过上述的本实施方式的半导体装置的制造方法使用粘接片材1而制造的。因此，对因在支撑部件14的表面14a形成的电路图案74所产生的凹凸的凹部，粘接剂层4可充分良好地填充。因此，能够提高半导体装置100的可靠性。
以上，对实施方式进行了详细说明，但本发明并不限于上述实施方式。
例如，在上述实施方式中，也可以使用不具备基材2、8的粘接片材1。即，粘接片材可以是由第1粘接剂层4a及第1粘接剂层4b构成的片材，也可以是由第1粘接剂层4a及第1粘接剂层4b与粘合层10构成的片材，还可以是由单层的粘接剂层构成的片材。
使用本实施方式的粘接片材1制造的半导体装置并不限于半导体装置100。图6是另一实施方式的半导体装置的概略剖面图。图6中所示的半导体装置200具备半导体元件搭载用的支撑部件14、设置在支撑部件14上的半导体元件Waa和与半导体元件Waa介由粘接剂层40而粘接的半导体元件Wa。支撑部件14与半导体元件Waa介由粘接剂41而粘接。作为粘接剂41，只要是由能够将半导体元件Waa与支撑部件14粘接的物质构成即可。支撑部件14由形成有电路图案84、94的基板90构成。电路图案84与半导体元件Waa利用金线等引线88而电连接，半导体元件Waa及引线88通过粘接剂层40而密封。
在半导体装置200中，对因引线88及电路图案84所产生的凹凸的凹部，粘接剂层40可充分良好地埋入。此外，通过粘接剂层40能够防止半导体元件Wa与引线88接触。由此，能够提高半导体装置的可靠性。另外，在半导体装置200中，通过粘接剂层40能够将半导体元件Waa及引线88一并进行密封。
另外，作为使用本实施方式的粘接片材1而制造的半导体装置，还可列举出以下所示的半导体装置400。图7(b)中所示的半导体装置400是在评价用基板300上压接了经单片化的芯片(第二级的半导体元件Wb+粘接剂层40)的装置，通过以下的步骤来制造。首先，将上述粘接片材1的粘接剂层40(厚度为60μm)在70℃下贴附到厚度为50μm的半导体晶片(尺寸：8英寸)上。接着，将它们切割成7.5mm见方，得到粘接有粘接剂层40的半导体元件(芯片)Wb(参照图7(a))。
然后，如图7(a)中所示的那样，通过将经单片化的半导体元件Wb的粘接剂层40在120℃、0.10MPa、1秒钟的条件下压接到评价用基板300上，从而得到半导体装置400。其中，在图7中所示的评价用基板300中，第一级的半导体元件Wbb利用粘接剂41而粘接到支撑部件14上。支撑部件14由形成有电路图案104的基板90构成。作为粘接剂41，只要是由能够将半导体元件Wbb与支撑部件14粘接的物质构成即可。例如可以使用日立化成工业株式会社制的薄膜状粘接剂FH-900-20。其中，在半导体元件Wbb上连接着引线98。引线98连接于相对的2边，例如，在各边以225μm间隔逐个地配置32根。
实施例
以下，通过实施例对本发明更详细地进行说明，但本发明并不限于这些实施例。
<粘接片材的制作>
在实施例1、2及比较例1～3中，使用表1中所示的成分，通过以下的步骤制备由粘接剂组合物构成的清漆。首先，配合(B1)成分及(B2)成分、(D)填料，然后加入环己酮进行搅拌，接着加入(A)成分、(E)固化促进剂及(F)偶联剂并将各成分搅拌至变得均匀为止，由此得到粘接剂组合物的清漆。
(A)高分子量成分(A)
丙烯酸橡胶：Nagase Chemtex株式会社制商品名、商品名“HTR-860P-3”、重均分子量为80万、玻璃化转变温度：－13℃
(B)热固化性成分(B1)
甲酚酚醛清漆型环氧树脂：东都化成株式会社(株)制、商品名“YDCN-700-10”、环氧当量：210
(B)热固化性成分(B2)
双酚F型环氧树脂：DIC株式会社、商品名“EXA-830CRP”、环氧当量：159
(C)软化点为100℃以下的酚醛树脂(固化剂)
酚醛树脂：三井化学株式会社(株)制、商品名“MILEX XLC-LL”、软化点：75℃、羟基当量为175
酚醛树脂：大日本油墨化学工业株式会社制、商品名“PHENOLITELF-4871”、软化点：130℃、羟基当量为118
(D)填料
二氧化硅填料：Admatechs株式会社制、商品名“SC2050-HLG”、平均粒径为0.500μm
(E)固化促进剂
1-氰基乙基-2-苯基咪唑Curezol：四国化成工业株式会社(株)制、商品名“2PZ-CN”
(F)偶联剂
γ-巯基丙基三甲氧基硅烷：日本Unicar株式会社制、商品名“NUCA-189”
γ-脲基丙基三乙氧基硅烷：日本Unicar株式会社制、商品名“NUCA-1160”
表1
接着，将上述清漆涂布到作为基材薄膜的厚度为38μm的经脱模处理的聚对苯二甲酸乙二醇酯薄膜上，在基材薄膜上在140℃下加热干燥5分钟，制作了粘接片材(厚度为40μm)。
<粘接片材的评价>
如以下那样评价实施例1、2及比较例1～3中制作的粘接片材的特性。
(1)熔融粘度的测定
实施例1、2及比较例1～3的粘接片材的粘接剂层的熔融粘度使用旋转式粘弹性测定装置(TA Instruments Japan株式会社制、ARES-RDA)进行测定。以下示出具体的步骤。首先，将基材薄膜2从粘接片材1剥离后，将粘接剂层4在70℃下多张层压而粘贴在一起，使其膜厚达到100μm以上，冲裁成直径为8mm的圆形。将所制作的圆形的薄膜用2个同样8mm的夹具夹住，制作了样品，进行测定(在测定条件：频率：1Hz、测定起始温度：35℃、测定结束温度：150℃、升温速度为5℃/分钟的测定条件下进行测定，读取80℃的值)。将结果示于表2中。
(2)引线埋入性
在表面涂敷有Al的150μm厚的半导体晶片背面贴附FH-900-25(日立化成工业制)，使用切割机(DISCO制DFD-6361)切割成7.5mm×7.5mm。利用柔性芯片接合机(flexible die bonder)(Renesas Eastern JapanSemiconductor,Inc.制DB730SP)以150℃/0.04MPa/1秒进行热压接。利用引线接合机(株式会社新川制UTC-230BI)形成柱形凸点，使用弹性体贴附机(Renesas Eastern Japan Semiconductor,Inc.制、商品名“ES-10”)，以r.t./3.2kgf(50g/凸点)/3秒将凸点整平。利用引线接合机进行接合，制成引线埋入性评价用基板。在100μm厚的半导体晶片上在70℃下层压粘接片材1，使用切割机切割成7.5mm×7.5mm。接着，用柔性芯片接合机在120℃/0.1MPa/1秒的条件下进行热压接，制成评价样品。使用真空蒸镀机(Vacuum Device Inc.制VE2030)，对上述评价样品实施碳蒸镀。使用环境控制型扫描电子显微镜(株式会社Philips制、商品名“LC30”)，从倾斜15°的角度观察引线埋入部，进行埋入性评价。将埋入性良好的情况判断为“○”，将差的情况判断为“×”。将测定的结果示于表2中。
(3)粘接强度的测定
通过下述的方法测定粘接剂层的芯片抗切强度(粘接强度)。首先，将粘接片材的粘接剂层在70℃下贴附到厚度为400μm的半导体晶片上。接着，将它们切割成5mm见方，得到带粘接剂层的半导体芯片。将单片化的带粘接剂层的半导体芯片的粘接剂层侧在120℃/0.1MPa/5s的条件下热压接到引线框(大日本印刷株式会社制、商品名“Alloy 42 LF810TR”)上。接着，在烘箱中进行110℃/1小时+170℃/3小时的阶段固化，使芯片接合薄膜完全固化。使用万能接合强度试验机(Dage公司制、系列4000)，在6.7MPa/秒、250℃的温度条件下测定芯片抗切强度，将其作为粘接强度。将测定的结果示于表2中。
(4)绝缘可靠性试验(HAST：Highly Accelerated Storage Test)
在电蚀试验用基板(对ESPANEX上的铜箔进行蚀刻，形成的叉指形图案(无镀金、线宽为30μm、间隔为70μm)上，用压接机贴附(100℃、压力为2kgf、贴附时间为10秒)切出的薄膜(5mm×12mm)。将其在170℃下固化5小时后作为样品。将固化后样品设置到加速寿命试验装置(HIRAYAMA制、商品名+“PL-422R8”、条件：130℃/85％/100小时)中，测定绝缘电阻。作为评价方法，将在20小时以内变成106Ω以下的样品评价为“×”，将在50小时以上且100小时以内变成106Ω以下的样品评价为“△”，将在100小时以上保持106Ω以上的样品评价为“○”。将测定的结果示于表2中。
(5)粘性强度力的测定试验
通过探针法测定实施例1、2及比较例1～3的粘接剂层片材的粘性强度。具体而言，首先，将粘接片材的粘接剂层用双面胶带粘贴到平行的玻璃板上。接着，将基材薄膜从粘接片材上剥离，放置到30℃的热板上，将探针在下述条件下对粘接剂层的表面进行按压，测定将探针从粘接剂层拉离时的强度作为粘性强度。将测定的结果示于表2中。
测试速度：5mm/分钟
加压时间：1.0秒
初始载荷(前负荷)：200gf
(6)发泡试验
首先，将粘接片材在70℃下层压到厚度为100um半导体晶片上，小片化成10mm×10mm。将该经小片化的带粘接片材的芯片在120℃/0.1MPa/1秒的条件下压接到厚度为625um的半导体晶片上，在110℃下进行1小时热固化后，在200℃下在热板上施加10分钟相当于引线接合的热。然后，使用超声波探查装置(SAT)(日立建机株式会社制、商品名“HYE-FOCUS”)评价有无发泡。将没有发泡的情况评价为“○”，将见到发泡的情况评价为“×”。将如上所述测定的结果示于表2中。
表2
产业上的可利用性
根据本发明，能够提供可提高生产效率、并且埋入性及拾取性良好、能够实现具备高可靠性的半导体装置的粘接片材。
符号说明
1      粘接片材               2、8    基材
4、40  粘接剂层               W       半导体晶片
Ws     半导体晶片的主表面     Wa      半导体元件
10     粘合层                 12      切割片材
14     支撑部件               14a     支撑部件的表面
18     带粘接剂层的半导体元件 70      基板
74、84、94、104    电路图案   76      端子
78、88、98         引线       80      密封材料
100、200、400      半导体装置

Claims (3)

1.一种粘接片材，其特征在于，其由包含(A)高分子量成分、(B1)软化点低于50℃的热固化性成分、(B2)软化点为50℃以上且100℃以下的热固化性成分、和(C)软化点为100℃以下的酚醛树脂的树脂组合物形成，并且以该树脂组合物100质量％为基准，含有11～22质量％的所述(A)高分子量成分、10～20质量％的所述(B1)软化点低于50℃的热固化性成分、10～20质量％的所述(B2)软化点为50℃以上且100℃以下的热固化性成分、15～30质量％的所述(C)软化点为100℃以下的酚醛树脂。
2.根据权利要求1所述的粘接片材，其特征在于，80℃下的熔融粘度为300～3000Pa·s。
3.一种半导体装置的制造方法，其特征在于，其是由使用了权利要求1或2所述的粘接片材的带粘接剂层的半导体芯片构成的半导体装置的制造方法，其具备以下工序：
薄膜固化工序：将所述带粘接剂层的半导体芯片压接到电路基板上，然后对所述粘接剂层进行110～125℃、0.5～1小时的加热；和
引线接合工序：将所述带粘接剂层的半导体芯片与电路基板介由接合线在230℃以下进行电连接。
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