TW201336140A - Organic el device manufacturing apparatus, film forming apparatus - Google Patents
Organic el device manufacturing apparatus, film forming apparatus Download PDFInfo
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- TW201336140A TW201336140A TW102116051A TW102116051A TW201336140A TW 201336140 A TW201336140 A TW 201336140A TW 102116051 A TW102116051 A TW 102116051A TW 102116051 A TW102116051 A TW 102116051A TW 201336140 A TW201336140 A TW 201336140A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 308
- 239000000463 material Substances 0.000 claims abstract description 23
- 238000007740 vapor deposition Methods 0.000 claims description 90
- 238000005401 electroluminescence Methods 0.000 claims description 43
- 238000012937 correction Methods 0.000 claims description 39
- 238000003825 pressing Methods 0.000 claims description 28
- 238000005452 bending Methods 0.000 claims description 16
- 238000001704 evaporation Methods 0.000 claims description 12
- 230000008020 evaporation Effects 0.000 claims description 10
- 238000007738 vacuum evaporation Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 2
- 230000000630 rising effect Effects 0.000 claims description 2
- 230000000295 complement effect Effects 0.000 claims 1
- 230000008016 vaporization Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 44
- 239000000428 dust Substances 0.000 abstract description 10
- 238000012423 maintenance Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract 4
- 230000001419 dependent effect Effects 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 48
- 238000012545 processing Methods 0.000 description 32
- 230000007246 mechanism Effects 0.000 description 31
- 230000005540 biological transmission Effects 0.000 description 22
- 238000007789 sealing Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 12
- 238000013459 approach Methods 0.000 description 11
- 238000012546 transfer Methods 0.000 description 11
- 238000001816 cooling Methods 0.000 description 8
- 239000000498 cooling water Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000003462 Bender reaction Methods 0.000 description 1
- 0 CC(C)**CN(C)C Chemical compound CC(C)**CN(C)C 0.000 description 1
- LETYIFNDQBJGPJ-UHFFFAOYSA-N CCC1(C)CCCC1 Chemical compound CCC1(C)CCCC1 LETYIFNDQBJGPJ-UHFFFAOYSA-N 0.000 description 1
- CUHFDRWBFKKJMG-UHFFFAOYSA-N CCCC(CC1)C2(CCC(C)C)C1C2CC Chemical compound CCCC(CC1)C2(CCC(C)C)C1C2CC CUHFDRWBFKKJMG-UHFFFAOYSA-N 0.000 description 1
- HICYLMKNNFKEMK-UHFFFAOYSA-N CCCC1(C)CCCC1 Chemical compound CCCC1(C)CCCC1 HICYLMKNNFKEMK-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- 239000011248 coating agent Substances 0.000 description 1
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- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- 239000000314 lubricant Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- -1 wiring Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
本發明係有關有機電激發光製造裝置、成膜裝置及此等之成膜方法、液晶顯示基板製造裝置以及校準裝置及校準方法,特別是關於適合於大型基板之校準的有機電激發光製造裝置以及成膜裝置及液晶顯示基板製造裝置。 The present invention relates to an organic electroluminescence manufacturing apparatus, a film forming apparatus, a film forming method therefor, a liquid crystal display substrate manufacturing apparatus, a calibration apparatus, and a calibration method, and more particularly to an organic electroluminescence manufacturing apparatus suitable for calibration of a large substrate. And a film forming apparatus and a liquid crystal display substrate manufacturing apparatus.
作為製造有機電激發光裝置之有力的方法,有著真空蒸鍍法。在真空蒸鍍中,必須要有基板與光罩之校準。年年處理基板的大型化之浪潮,G6世代的基板尺寸係成為1500mm×1800mm。当基板尺寸乃作為大型化時,當然光罩也大型化,其尺寸亦到達至2000mm×2000mm程度。特別是使用鋼製的光罩時,在有機電激發光裝置係其重量亦成為300kg。在以往中,將基板及光罩做成水平,實施校準(位置調整)。另外,經由大型化,校準亦變為嚴格,其要求為高。作為關於如此之校準的以往技術,係有下述之專利文獻1、2。另外,關於校準的補正,係於專利文獻2揭示有:在經由水平之校準中,加進校準檢測量與實際之補正量的差而進行校準之方法。 As a powerful method for manufacturing an organic electroluminescent device, there is a vacuum evaporation method. In vacuum evaporation, calibration of the substrate and the mask must be performed. The wave of large-scale processing of substrates is handled every year, and the substrate size of the G6 generation is 1500 mm × 1800 mm. When the size of the substrate is increased, the size of the mask is also increased, and the size thereof is also about 2000 mm × 2000 mm. In particular, when a steel photomask is used, the weight of the organic electroluminescence device is also 300 kg. In the past, the substrate and the mask were horizontally leveled, and calibration (position adjustment) was performed. In addition, the calibration has become stricter through the enlargement, and the demand is high. As a prior art regarding such calibration, Patent Documents 1 and 2 listed below are available. Further, regarding the correction of the calibration, Patent Document 2 discloses a method of performing calibration by adding a difference between the calibration detection amount and the actual correction amount in the horizontal calibration.
[專利文獻1]日本特開2006-302896號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-302896
[專利文獻2]日本特開2008-004358號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2008-004358
但將揭示於專利文獻1之基板與光罩作為橫向進行校準之方法,係如圖14所示,基板及光罩係經由其薄度與本身重量而有大彎曲。其彎曲如為一樣,則考慮此而製作光罩即可,但當然中心越大,而基板尺寸越大時,製作係變為困難。另外,一般而言,在其中心點的彎曲量係將基板的彎曲作為d1,將光罩的彎曲作為d2時,成為d1>d2。當基板彎曲大時,基板蒸鍍面乃與光罩接觸,於校準時,在前工程產生接觸傷於蒸鍍之有機膜之故,有必要於校準時,加大間隔基板與光罩。但間隔為視野深度以上而進行較準時,精確度則變差,而有成為不良品之課題。特別是在顯示裝置用基板中,無法得到高精彩的畫面者。 However, the method of calibrating the substrate and the photomask of Patent Document 1 as a lateral direction is disclosed. As shown in FIG. 14, the substrate and the photomask are greatly curved by their thinness and their own weight. If the curvature is the same, it is sufficient to prepare the photomask in consideration of this, but of course, the center is larger, and when the substrate size is larger, the production system becomes difficult. In addition, generally, the amount of bending at the center point is d1 > d2 when the curvature of the substrate is d1 and the curvature of the mask is d2. When the substrate is bent, the vapor deposition surface of the substrate is in contact with the photomask. During the calibration, the organic film which is in contact with the vapor deposition is generated in the prior art, and it is necessary to enlarge the spacer substrate and the mask during the calibration. However, when the interval is equal to or greater than the depth of field of view, the accuracy is deteriorated, and there is a problem that it becomes a defective product. In particular, in a substrate for a display device, a person who is not able to obtain a high-quality screen cannot be obtained.
為了應付其課題,有著將基板與光罩做成略垂直而蒸鍍之方法。由作為垂直者,可大幅度地減少經由基板或陰蔽罩之自重的彎曲。 In order to cope with the problem, there is a method in which a substrate and a photomask are formed to be slightly vertical and vapor-deposited. By being a vertical person, the bending of the self weight through the substrate or the shadow mask can be greatly reduced.
但陰蔽罩係其光罩部乃薄度20~50μm,於其製造時,如圖11所示,光罩全體乃從中心朝周圍產生彎曲,在光罩部端部中,其影響為大。圖11乃誇張描繪其狀態的圖,其中,了解到於基板與陰蔽罩之間做成有數十μm之間隙,其間隙乃引起蒸鍍模糊,而有無法高精確度地進行蒸 鍍之課題。 However, in the case of the mask, the thickness of the mask portion is 20 to 50 μm. When it is manufactured, as shown in Fig. 11, the entire mask is bent from the center toward the periphery, and the effect is large in the end portion of the mask portion. . Fig. 11 is a diagram exaggeratingly depicting the state in which it is understood that a gap of several tens of μm is formed between the substrate and the shadow mask, and the gap causes vapor deposition blurring, and steaming cannot be performed with high precision. Plating problem.
另外,記載於專利文獻1之以往方法係如圖15所示,為了防止蒸鍍材料附著於校準標記,於與蒸鍍側相反側,使用接受從垂直或斜方進行照明的光源和其反射而配置攝影機之所謂反射型光學系統,檢測校準標記,進行校準。在以往之有機電激發光製造裝置中,如圖3之圈出圖所示,將設置於鋼製之光罩的四角形之凹部與設置於透明基板上之金屬部,作為校準標記,做成金屬部呈來到四角形的中心地進行校準。但反射型光學系統係有著以下的問題,有著無法精確度佳進行校準的課題。(1)光罩表面係因做成鏡面而引起光暈等之故,無法提昇照明強度而降低時,而無法檢測出金屬部。(2)在校準時,呈不傷及基板表面地,有必要於與光罩之間設置0.5mm程度之間隙,但反射型光學系統係視野深度為小而像變為模糊。 In addition, as shown in FIG. 15, the conventional method described in Patent Document 1 uses a light source that receives illumination from vertical or oblique directions and reflects on the opposite side of the vapor deposition side in order to prevent the vapor deposition material from adhering to the alignment mark. The so-called reflective optical system of the camera is configured to detect calibration marks and perform calibration. In the conventional organic electroluminescence manufacturing apparatus, as shown in the circled diagram of FIG. 3, the rectangular portion provided in the steel mask and the metal portion provided on the transparent substrate are used as calibration marks to form a metal. The part is calibrated to the center of the quadrangle. However, the reflective optical system has the following problems, and there is a problem that calibration cannot be performed accurately. (1) When the surface of the mask is caused by a mirror surface, it is caused by halation or the like, and when the illumination intensity cannot be increased and lowered, the metal portion cannot be detected. (2) At the time of calibration, it is necessary to provide a gap of about 0.5 mm between the mask and the substrate, but the depth of the field of view of the reflective optical system is small and the image becomes blurred.
接著,在揭示於專利文獻1之方法中,為將校準基板與光罩之機構全體作為真空內之設置之故,有著產生有伴隨驅動部等之移動的粉塵及熱,或來自對於驅動部等之配線的氣體、來自潤滑劑之氣體、來自構件表面之氣體乃降低真空度之可能性。對於第1之真空內的粉塵係其粉塵乃附著於基板或光罩而引起蒸鍍不佳,第2的發熱係助長光罩的熱膨脹而使蒸鍍尺寸變化,並且第3的空氣係降低真空度之故,同時有著降低產率,即生產性的問題。 Next, in the method disclosed in Patent Document 1, in order to provide the entire structure of the calibration substrate and the photomask as vacuum, there is dust or heat generated by the movement of the driving portion or the like, or from the driving unit or the like. The gas of the wiring, the gas from the lubricant, and the gas from the surface of the member reduce the possibility of vacuum. In the dust in the first vacuum, the dust adheres to the substrate or the mask, causing poor vapor deposition, and the second heat generation promotes thermal expansion of the mask to change the vapor deposition size, and the third air system reduces the vacuum. At the same time, there is a problem of reducing productivity, that is, productivity.
另外,為將校準基板與光罩之機構全體作為真空內之設置之故,一旦在驅動部等產生故障時,維修上需要時間 ,而有裝置之稼動率下降之問題。 In addition, in order to set the entire mechanism of the calibration substrate and the photomask as a vacuum, it takes time to repair when a failure occurs in the drive unit or the like. And there is a problem of the decline in the rate of utilization of the device.
隨之,本發明之第1目的係提供可降低基板或光罩的彎曲,高精確地進行蒸鍍之有機電激發光製造裝置及成膜裝置以及液晶顯示基板製造裝置者。 A first object of the present invention is to provide an organic electroluminescence light-producing apparatus, a film-forming apparatus, and a liquid crystal display board manufacturing apparatus which can reduce the curvature of a substrate or a reticle and perform vapor deposition with high precision.
另外,本發明之第2目的係提供可降低陰蔽罩的彎曲影響,高精確地進行蒸鍍之有機電激發光製造裝置、成膜裝置以及此等之成膜方法。 Further, a second object of the present invention is to provide an organic electroluminescence light-producing apparatus, a film-forming apparatus, and a film forming method which can reduce the influence of the bending of the shadow mask and perform vapor deposition with high precision.
更且,本發明之第3目的係提供可精確度佳進行校準之校準裝置及校準方法。 Furthermore, a third object of the present invention is to provide a calibration apparatus and a calibration method that can be accurately calibrated.
另外,本發明之第4目的係提供使用上述校準裝置或校準方法,可高精確度地進行蒸鍍之有機電激發光製造裝置及成膜裝置。 Further, a fourth object of the present invention is to provide an organic electroluminescence light-producing apparatus and a film-forming apparatus which can perform vapor deposition with high precision using the above-described calibration apparatus or calibration method.
更且,本發明之第5目的係提供由配置驅動部等於大氣側者,降低真空內之粉塵或氣體的產生,生產性高之有機電激發光製造裝置及成膜裝置。 Furthermore, a fifth object of the present invention is to provide an organic electroluminescence light-producing device and a film-forming apparatus which are capable of reducing the generation of dust or gas in a vacuum by arranging the drive unit to be equal to the atmosphere side.
另外,本發明之第6目的係提供由配置驅動部等於大氣側者,提昇維護性,稼動率高之有機電激發光製造裝置及成膜裝置。 Further, a sixth object of the present invention is to provide an organic electroluminescence light-producing device and a film-forming device which have a high degree of maintenance and a high utilization rate by arranging the drive unit to be equal to the atmosphere side.
為了達成上述任一之目的,其第1特徵乃具有:將基板保持成立起之姿勢的基板保持手段,和將陰蔽罩保持垂下之姿勢的陰蔽罩垂下手段,和攝影設置於前述基板與陰蔽罩之校準標記的校準光學手段,和在前述垂下姿勢之狀 態,驅動前述陰蔽罩之校準驅動手段,和依據前述校準光學手段的結果,控制前述校準驅動手段之控制手段。 In order to achieve the above-described object, the first feature includes a substrate holding means for holding the substrate in a standing position, and a female cover hanging means for holding the female cover down; and imaging is provided on the substrate and The calibration optical means of the calibration mark of the shadow mask, and the shape of the hanging posture described above And a control driving means for driving the aforementioned shadow mask, and controlling the control means of the calibration driving means according to the result of the calibration optical means.
另外,為了達成上述任一之目的,其第2特徵乃加上於第1特徵,前述陰蔽罩垂下手段係於前述陰蔽罩或保持前述陰蔽罩之校準基底,具有可旋轉地支持前述陰蔽罩之複數之旋轉支持部,前述校準驅動手段係具有前述複數之旋轉支持部之中驅動至少一處之主動旋轉支持部的主動驅動手段,前述有機電激發光製造裝置係更具有將前述主動旋轉支持部以外之其他旋轉支持部的傳動旋轉支持部,隨著前述主動旋轉支持部的動作之校準傳動手段。 Further, in order to achieve the above object, the second feature is added to the first feature, and the female cover hanging means is rotatably supported by the shade cover or the calibration base holding the shadow cover. a plurality of rotation support portions of the shadow mask, wherein the calibration driving means includes an active driving means for driving at least one of the plurality of rotation support portions, and the organic electroluminescence manufacturing device further includes The transmission rotation support portion of the other rotation support portion other than the active rotation support portion is calibrated with the operation of the active rotation support portion.
更且,為了達成上述任一之目的,其第3特徵乃加上於第2特徵,將前述主動旋轉支持部,設置於前述陰蔽罩或保持前述陰蔽罩之校準基底之上部、兩端側之二處者。 Further, in order to achieve the above object, the third feature is added to the second feature, and the active rotation support portion is provided on the upper portion and both ends of the shadow mask or the calibration substrate holding the shadow mask. The second side of the side.
另外,為了達成上述任一之目的,其第4特徵乃加上於第2特徵,前述校準驅動手段係具有:具備獨立驅動前述二處於上下方向之上下驅動手段,和將前述二處之中,一處驅動於左右方向之左右驅動手段的前述主動驅動手段,和前述其他一處係對於前述左右方向而言傳動之左右傳動手段者。 Further, in order to achieve the above-described object, the fourth feature is added to the second feature, and the calibration driving means includes: a driving means for independently driving the two in the up-and-down direction, and two of the two. The above-described active driving means for driving the right and left driving means in the left-right direction, and the other one of the above-mentioned ones for the left and right direction of the transmission.
另外,為了達成上述任一之目的,其第5特徵乃加上於第1乃至第4特徵,前述校準驅動手段及/或校準傳動手段係設置於前述真空室之外者。 Further, in order to achieve the above object, the fifth feature is added to the first to fourth features, and the calibration driving means and/or the calibration transmission means are provided outside the vacuum chamber.
更且,為了達成上述任一之目的,其第6特徵乃加上於第1乃至第5特徵,將前述校準驅動手段設置於前述陰 蔽罩之上部側,將前述校準傳動手段設置於前述陰蔽罩之下部側者。 Furthermore, in order to achieve the above object, the sixth feature is added to the first to fifth features, and the calibration driving means is provided to the yin The upper side of the mask is provided on the lower side of the shadow mask.
另外,為了達成上述任一之目的,其第7特徵乃加上於第1乃至第6特徵,前述基板保持手段係具有將前述基板,從水平狀態立起之手段者。 In addition, in order to achieve the above-described object, the seventh feature is added to the first to sixth features, and the substrate holding means has a means for raising the substrate from a horizontal state.
另外,為了達成上述任一之目的,其第8特徵乃加上於第1乃至第6特徵,前述基板保持手段係具有在將前述基板立起的狀態,接近或緊密於陰蔽罩之手段者。 In addition, in order to achieve the above object, the eighth feature is added to the first to sixth features, and the substrate holding means has a means of bringing the substrate up and close to or close to the shadow mask. .
更且,為了達成上述任一之目的,其第9特徵乃針對在具有在真空室內進行基板與陰蔽罩之校準的校準手段,和將蒸發源內之蒸鍍材料,蒸鍍於基板之真空蒸鍍室的成膜裝置,具有:載置前述基板,保持成立起姿勢之基板保持器,和呈面對於前述立起姿勢之前述基板地,保持前述陰蔽罩之陰蔽罩保持手段,和減低經由前述陰蔽罩之彎曲的影響之補正手段者。 Furthermore, in order to achieve the above object, the ninth feature is directed to a calibration method having a calibration of the substrate and the shadow mask in the vacuum chamber, and a vacuum evaporation of the vapor deposition material in the evaporation source on the substrate. The film forming apparatus of the vapor deposition chamber includes: a substrate holder that holds the substrate, holds the upright posture, and a shade cover holding means that holds the shadow mask in the substrate in the rising posture; and The means for correcting the influence of the bending through the aforementioned shadow mask is reduced.
另外,為了達成上述任一之目的,其第10特徵乃加上於第9特徵,前述補正手段係具有按壓保持前述基板之基板保持器,或前述陰蔽罩之按壓手段者。 In addition, in order to achieve the above-described object, the tenth feature is added to the ninth feature, and the correction means includes a substrate holder that presses and holds the substrate, or a pressing means of the shadow mask.
更且,為了達成上述任一之目的,其第11特徵乃加上於第10特徵,前述補正手段係具有測定前述基板保持器與前述陰蔽罩間之距離的測定手段,依據前述測定手段之結果,或依據預先所訂定之補正量,控制前述按壓手段者。 Furthermore, in order to achieve the above object, the eleventh feature is added to the tenth feature, and the correction means has a measuring means for measuring a distance between the substrate holder and the shadow mask, and is based on the measuring means. As a result, the above-described pressing means is controlled based on the amount of correction prescribed in advance.
另外,為了達成上述任一之目的,其第12特徵乃加 上於第11特徵,前述按壓手段乃按壓前述基板保持器之按壓位置係前述基板的端部蒸鍍部之外側周圍者,或者前述按壓手段乃按壓前述陰蔽罩之按壓位置係對應於前述基板的端部蒸鍍部之外側周圍之位置者。 In addition, in order to achieve any of the above purposes, its 12th feature is added In the eleventh aspect, the pressing means presses the pressing position of the substrate holder to be around the outer side of the end portion vapor deposition portion of the substrate, or the pressing means presses the pressing position of the female cover to correspond to the substrate The position around the outer side of the end vapor deposition section.
更且,為了達成上述任一之目的,其第13特徵乃加上於第12特徵,前述按壓位置係設置於前述基板保持器或前述陰蔽罩之四角附近的四處者。 Further, in order to achieve the above object, the thirteenth feature is added to the twelfth feature, and the pressing position is provided at four places in the vicinity of the four corners of the substrate holder or the shadow mask.
另外,為了達成上述任一之目的,其第14特徵乃針對在真空室內進行基板與陰蔽罩之校準,將蒸鍍材料蒸鍍於前述基板之成膜方法,具有補正前述陰蔽罩所具有之彎曲的補正工程者。 In addition, in order to achieve the above object, the fourteenth feature is a method for forming a film by depositing a vapor deposition material on the substrate by aligning the substrate and the shadow mask in a vacuum chamber, and correcting the shadow mask. The correction of the bending of the engineer.
更且,為了達成上述任一之目的,其第15特徵乃加上於第14特徵,前述補正工程乃於按壓保持基板之基板保持器或前述陰蔽罩之情況所進行之工程者。 Furthermore, in order to achieve the above object, the fifteenth feature is added to the fourteenth feature, and the correction is performed by a substrate holder or a shadow mask that holds the substrate.
另外,為了達成上述任一之目的,其第16特徵乃加上於第14特徵,前述補正工程乃於進行校準之前,或者進行校準之後加以實施者。 Further, in order to achieve the above object, the sixteenth feature is added to the fourteenth feature, and the correction process is performed before or after calibration.
更且,為了達成上述任一之目的,其第17特徵乃加上於第14乃至第16任一之特徵,具有於進行校準之後,將前述基板全體緊密於陰蔽罩之工程者。 Further, in order to achieve the above object, the seventeenth feature is the feature of any one of the fourteenth to sixteenth, and that the substrate is tightly attached to the shadow mask after the calibration.
另外,為了達成上述任一之目的,其第18特徵乃加上於第10特徵,前述補正工程乃具有設置於中空罩體,將一端開放於前述中空罩體而另一端開放於大氣之中空的連接部,於前述補正手段,藉由前述連接部而敷設必要之 配線者。 Further, in order to achieve the above object, the eighteenth feature is added to the tenth feature, and the correction project is provided in a hollow cover, and one end is opened to the hollow cover and the other end is open to the atmosphere. The connecting portion is required to be laid by the connecting portion in the above-mentioned correcting means Wiring person.
更且,為了達成上述第1之目的,其第19特徵乃加上於第9特徵,具有將前述基板保持手段與前述補正手段,從水平的狀態做成立起之狀態的基板旋轉手段者。 Furthermore, in order to achieve the above-described first object, the ninth feature is added to the ninth feature, and the substrate holding means and the correction means are formed in a state in which the horizontal state is established.
另外,為了達成上述任一之目的,其第20特徵乃加上於第19特徵,前述基板旋轉手段係旋轉前述連接部之手段者。 Further, in order to achieve the above object, the twentieth feature is added to the nineteenth feature, and the substrate rotating means is a means for rotating the connecting portion.
更且,為了達成上述任一之目的,其第21特徵乃陰蔽罩係具有校準用之貫通孔,校準部係具備:具有從前述貫通孔之一端側射入光的光源與攝影前述另一端之攝影手段的校準光學系統,和依據前述攝影手段的輸出,進行校準之控制部者。 Further, in order to achieve the above object, the twenty-first feature is that the shadow mask has a through hole for calibration, and the calibration portion includes a light source that emits light from one end side of the through hole and the other end of the photographing The calibration optical system of the photographing means and the control unit that performs calibration based on the output of the photographing means.
另外,為了達成上述任一之目的,其第22特徵乃加上於前述第21特徵,前述貫通孔乃於前述陰蔽罩之前後貫通的孔,前述校準光學系統係具有前述至少於對於前述基板的處理時,遮蔽對於前述貫通孔之處理材的附著之遮蔽手段者。 Further, in order to achieve the above object, the twenty-second feature is the twenty-first feature, wherein the through hole is a hole that penetrates before and after the shadow mask, and the calibration optical system has the aforementioned at least for the substrate At the time of the treatment, the shielding means for shielding the adhesion to the processing material of the through hole is shielded.
另外,為了達成上述任一之目的,其第23特徵乃加上於前述第22特徵,前述校準光學系統係具有將前述遮蔽手段,在處理時係移動至處理位置,在校準時係移動至校準位置之遮蔽移動手段者。 Further, in order to achieve the above object, the twenty-third feature is the twenty-second feature, wherein the calibration optical system has the shielding means moved to a processing position during processing, and moves to calibration during calibration. The position of the shadow moving means.
另外,為了達成上述任一之目的,其第24特徵乃加上於前述第21特徵,前述貫通孔之一端乃校準用之開口部,於另一端的開口部,連接或插入光纖,將前述光纖的 另一端連接於光源或攝影手段者。 Further, in order to achieve the above object, the twenty-fourth feature is the twenty-first feature, wherein one end of the through hole is an opening for calibration, and an optical fiber is connected or inserted at an opening of the other end, and the optical fiber is used of The other end is connected to a light source or a photographic means.
更且,為了達成上述任一之目的,其第25特徵乃加上於前述第22特徵,前述貫通孔之一端乃校準用之開口部,前述貫通孔係具有L字部者。 Further, in order to achieve the above object, the twenty-fifth feature is the twenty-second feature, wherein one end of the through hole is an opening for calibration, and the through hole has an L-shaped portion.
另外,為了達成上述任一之目的,其第26特徵乃具有:具備照射光至設置於基板及陰蔽罩之校準標記的光源,和攝影前述校準標記的攝影手段之校準光學系統;前述校準光學系統係具有前述光源或前述攝影手段之中至少一方乃隨著前述基板或前述陰蔽罩之校準動作而移動之追隨手段者。 Further, in order to achieve the above object, the twenty-sixth feature includes: a light source including a light source that emits light to a calibration mark provided on the substrate and the shadow mask; and a calibration optical system that photographs the calibration mark; the calibration optical The system has a follow-up means in which at least one of the light source or the photographing means moves in accordance with the alignment operation of the substrate or the shadow mask.
更且,為了達成上述任一之目的,其第27特徵乃加上於前述第26特徵,前述追隨手段乃連結於驅動前述校準動作之驅動部的移動之手段者。 Furthermore, in order to achieve the above object, the twenty-seventh feature is added to the twenty-sixth feature, and the following means is connected to a means for driving the driving of the calibration operation.
另外,為了達成上述任一之目的,其第28特徵乃具有:具備照射光至設置於基板及陰蔽罩之校準標記的光源,和攝影前述校準標記的攝影手段之校準光學系統;各自對應設置複數前述校準標記,對於各校準標記而言,設置複數前述校準光學系統,依據前述複數之攝影手段的輸出,將前述基板的中心位置校準成基準者。 Further, in order to achieve the above object, the twenty-eighth feature includes: a light source provided with a light source for irradiating light to a calibration mark provided on the substrate and the shadow mask; and a calibration optical system for photographing means for photographing the calibration mark; The plurality of calibration marks are provided, and for each of the calibration marks, a plurality of the calibration optical systems are provided, and the center position of the substrate is calibrated to a reference based on the output of the plurality of imaging means.
更且,為了達成上述任一之目的,其第29特徵乃加上於前述第28特徵,前述複數乃4個,將前述校準,設置於前述基板及前述陰蔽罩之四角附近者。 Further, in order to achieve the above object, the twenty-ninth feature is added to the twenty-eighth feature, and the plural number is four, and the calibration is provided in the vicinity of the four corners of the substrate and the shadow mask.
另外,為了達成上述任一之目的,其第30特徵乃加上於前述第21~29特徵,加以立起設置前述校準前述基板 及陰蔽罩者。 Further, in order to achieve the above object, the 30th feature is added to the above-described 21st to 29th features, and the calibration of the substrate is performed And the shade cover.
更且,為了達成上述任一之目的,其第31特徵乃加上於前述第21~30特徵,前述校準係在真空室內進行,具有將蒸發源內的蒸鍍材料對於基板進行蒸鍍處理之真空蒸鍍室者。 Furthermore, in order to achieve the above object, the thirty-first feature is added to the above-mentioned 21st to 30th features, and the calibration is performed in a vacuum chamber, and the vapor deposition material in the evaporation source is vapor-deposited on the substrate. Vacuum evaporation chamber.
另外,為了達成上述任一之目的,其第32特徵乃加上於前述第31特徵,具有前述校準光學系統之中,至少將前述攝影手段,從前述真空室的上部之大氣側內藏於突出之凹部,對於前述凹前端係設有光學視窗者。 Further, in order to achieve the above-described object, the thirty-third feature is the above-described thirty-third feature, and that the imaging device includes at least the imaging means from the atmosphere side of the upper portion of the vacuum chamber. The recessed portion is provided with an optical window for the concave front end.
更且,為了達成上述任一之目的,其第33特徵乃加上於前述第31特徵,前述遮蔽移動手段係具有設置於大氣側之驅動手段,和藉由真空密封手段而連結前述驅動手段與前述遮蔽手段之連結手段者。 Furthermore, in order to achieve the above object, the thirty-third feature is the 31st feature, wherein the shielding movement means has a driving means provided on the atmosphere side, and the driving means is coupled to the driving means by a vacuum sealing means. The means for connecting the aforementioned shielding means.
另外,為了達成上述任一之目的,其第34特徵乃加上於前述第31特徵,具有:為了進行前述校準而驅動前述陰蔽罩之驅動手段,和連接前述陰蔽罩或保持前述陰蔽罩之校準基底與前述驅動手段之校準軸;前述驅動手段係設置於大氣側,前述校準軸係藉由真空密封手段而動作者。 Further, in order to achieve the above object, the thirty-first feature is the same as the above-mentioned thirty-first feature, comprising: driving means for driving the female cover for performing the calibration, and connecting the female cover or holding the shadow The calibration substrate of the cover and the calibration axis of the driving means; the driving means is disposed on the atmosphere side, and the calibration axis is activated by a vacuum sealing means.
於最後,為了達成上述任一之目的,其第35特徵乃加上於前述第11至14特徵,作為前述蒸鍍材料而使用有機電激發光材料者。 Finally, in order to achieve the above object, the 35th feature is added to the above-described 11th to 14th features, and an organic electroluminescent material is used as the vapor deposition material.
如根據本發明,可提供可降低基板或光罩之彎曲,高精確度地蒸鍍之有機電激發光製造裝置或成膜裝置,或者液晶顯示基板製造裝置者。 According to the present invention, it is possible to provide an organic electroluminescence light-producing device or a film-forming device or a liquid crystal display substrate-manufacturing device which can reduce the curvature of a substrate or a reticle, and which is highly vapor-deposited.
另外,如根據本發明,可提供可降低陰蔽罩之彎曲的影響,高精確度地蒸鍍之有機電激發光製造裝置、成膜裝置以及此等製造方法及成膜方法者。 Further, according to the present invention, it is possible to provide an organic electroluminescence light-producing apparatus, a film-forming apparatus, and a manufacturing method and a film-forming method which can reduce the influence of the curvature of the shadow mask, and which are vapor-deposited with high precision.
更且,如根據本發明,可提供可精確度佳進行校準之校準裝置及校準方法者。 Moreover, according to the present invention, it is possible to provide a calibration apparatus and a calibration method which can be accurately calibrated.
另外,如根據本發明,可提供使用前述校準裝置或校準方法,可高精確度地蒸鍍之有機電激發光製造裝置及成膜裝置者。 Further, according to the present invention, it is possible to provide an organic electroluminescence light-producing device and a film-forming device which can be vapor-deposited with high precision using the above-described calibration device or calibration method.
更且,如根據本發明,可提供由配置驅動部等於大氣側者,降低真空內的粉塵或氣體的產生,生產性高之有機電激發光製造裝置或成膜裝置者。 Further, according to the present invention, it is possible to provide an organic electroluminescence light-generating device or a film-forming device which is capable of reducing the generation of dust or gas in a vacuum by the arrangement of the drive unit and the atmosphere side.
另外,如根據本發明,可提供由配置驅動部等於大氣側者,提昇維護性,稼動率高之有機電激發光製造裝置或成膜裝置者。 Further, according to the present invention, it is possible to provide an organic electroluminescence light-producing device or a film-forming device which has a high degree of maintenance and a high rate of productivity by arranging the drive unit to be equal to the atmosphere side.
使用圖面說明發明之第1實施形態。有機電激發光製造裝置係不只單形成發光材料層(電激發光層),以電極夾持之構造,而於陽極之上方,將電洞植入層或輸送層,於陰極之上方,將電子植入層或輸送層等,形成各種材料作為薄膜所成之多層構造,以及洗淨基板。圖1乃顯示其 製造裝置之一例的圖。 The first embodiment of the invention will be described using the drawings. The organic electroluminescence excitation manufacturing device not only forms a luminescent material layer (electroluminescence layer), but also has an electrode clamping structure, and above the anode, a hole is implanted into the layer or the transport layer, and the electron is placed above the cathode. The implant layer or the transport layer or the like forms a multilayer structure in which various materials are formed as a film, and the substrate is cleaned. Figure 1 shows it A diagram of an example of a manufacturing device.
在本實施形態之有機電激發光製造裝置100係大致由輸入處理對象之基板6之負載群組3、處理前述基板6之4個的群組(A~D)、各群組間或群組與負載群組3,或者與接下來之工程(封閉工程)之間之所設置之6個遞送室4所構成。在本實施形態中,將基板的蒸鍍面做成上面而輸送,進行蒸鍍時,將基板立起進行蒸鍍。 In the organic electroluminescence light-producing apparatus 100 of the present embodiment, the load group 3 of the substrate 6 to be processed is processed, and the group (A to D) of the substrate 6 is processed, and each group or group is processed. It is composed of six delivery rooms 4 arranged between the load group 3 and the next engineering (closed project). In the present embodiment, the vapor deposition surface of the substrate is transported on the upper surface, and when vapor deposition is performed, the substrate is lifted up and vapor-deposited.
負載群組3係由為了於前後維持真空而具有閘閥10之負載室31,和從前述負載室31接受基板6(以下單稱基板),進行旋轉將基板6輸入至遞送室4a之輸送機械手臂5R所成。各負載室31及各遞送室4係於前後具有閘閥10,控制該閘閥10之開關而維持真空的同時,於負載群組3或者接下來的群組等,遞送基板。 The load group 3 is a transfer robot 31 having a gate valve 10 for maintaining a vacuum before and after, and a transfer robot that receives the substrate 6 (hereinafter referred to as a substrate) from the load chamber 31 and rotates to input the substrate 6 to the delivery chamber 4a. 5R made. Each of the load chambers 31 and the respective delivery chambers 4 has a gate valve 10 in front and rear, and the switch of the gate valve 10 is controlled to maintain a vacuum, and the substrate is delivered to the load group 3 or the next group or the like.
各群組(A~D)係擁有:具有一台之輸送機械手臂5之輸送室2,和從輸送機械手臂5接受基板,在進行特定處理之圖面上,配置於上下之2個處理室1(第1添加字a~d係顯示群組,第2添加字u,d係顯示上側下側)。對於輸送室2與處理室1之間係設置有閘閥10。 Each group (A to D) has a transfer chamber 2 having one transport robot arm 5, and a substrate that receives the substrate from the transport robot 5, and is disposed on the upper and lower processing chambers on the plane for performing specific processing. 1 (The first added word a to d is the display group, the second added word u, and the d is the upper side of the upper side). A gate valve 10 is provided between the transfer chamber 2 and the processing chamber 1.
圖2係顯示輸送室2與處理室1之構成的概要。處理室1之構成係根據處理內容而有所差異,但舉例說明以真空蒸鍍發光材料,形成電激發光層之真空蒸鍍室1bu。圖3乃此時輸送室2b與真空蒸鍍室1bu之構成的模式圖與動作說明圖。在圖2之輸送機械手臂5係可將全體移動於上下(參照圖3之箭頭59),具有可旋轉於左右之連結 構造之支架57,對於其前端係於上下二段具有2支基板運送用之梳狀柄部58。1支柄部的情況係為了將基板交付至接下來之工程的旋轉動作、為了從先前的工程接受基板的旋轉動作、以及隨著此等之閘閥的開閉動作乃於輸出入處理之間而為必要,但經由做成上下二段之時,維持著輸入於單側之柄部的基板,以未保持基板側之柄部,從真空蒸鍍室進行基板的輸出動作之後,可連續進行輸入動作者。 2 is a view showing the outline of the configuration of the transfer chamber 2 and the processing chamber 1. The configuration of the processing chamber 1 differs depending on the processing contents, but a vacuum vapor deposition chamber 1bu in which an electroluminescent layer is formed by vacuum-evaporating a luminescent material is exemplified. Fig. 3 is a schematic view and an operation explanatory view showing a configuration of the transfer chamber 2b and the vacuum vapor deposition chamber 1bu at this time. In the transport robot 5 of Fig. 2, the whole body can be moved up and down (see arrow 59 in Fig. 3), and has a link that can be rotated to the left and right. The holder 57 of the structure has two comb-shaped handles 58 for transporting the substrate in the upper and lower stages. The case of one handle is to transfer the substrate to the rotation of the next project, in order to The rotation operation of the substrate is performed, and the opening and closing operation of the gate valve is required between the input and the process. However, when the upper and lower stages are formed, the substrate input to the one-side handle is maintained. After the output operation of the substrate is performed from the vacuum evaporation chamber without holding the shank on the substrate side, the input actor can be continuously input.
作為2柄部或作為1支柄部係經由所要求之生產能力而決定。在以後的說明中,為了將說明作為簡單,以1支柄部進行說明。 The two handles or one handle are determined by the required production capacity. In the following description, in order to simplify the description, one handle portion will be described.
另一方面,真空蒸鍍室1bu係大致由使發光材料蒸發,蒸鍍於基板6之蒸鍍部7,和進行基板6與陰蔽罩之位置調整,蒸鍍於基板6之必要部分之校準部8,和以及進行輸送機械手臂5與基板之遞送,將基板6移動至蒸鍍部7之處理遞送部9所成。校準部8與處理遞送部9係設置有右側R線路與左側L線路之2系統。 On the other hand, the vacuum vapor deposition chamber 1bu is roughly etched by evaporating the luminescent material, vapor-deposited on the vapor deposition portion 7 of the substrate 6, and adjusting the position of the substrate 6 and the shadow mask to be vapor-deposited on the necessary portion of the substrate 6. The portion 8, and the delivery of the transport robot 5 and the substrate, are moved to the process delivery portion 9 of the vapor deposition portion 7. The calibration unit 8 and the processing delivery unit 9 are provided with two systems of a right R line and a left L line.
因此,在本實施形態之處理的基本思考方法係於進行一方之線路(例如R線路)蒸鍍之間,在另一方之L線路中,進行基板的輸出入,進行基板6與陰蔽罩81之校準,結束進行蒸鍍之準備者。經由交互進行此處理之時,可未蒸鍍於基板而減少多餘昇華之時間。 Therefore, the basic method of the processing in the present embodiment is to perform vapor deposition between one line (for example, R line), and to perform input and output of the substrate in the other L line, and to perform the substrate 6 and the shadow mask 81. The calibration is completed, and the preparer who performs the vapor deposition is finished. When this process is performed by interaction, the time for excess sublimation can be reduced without vapor deposition on the substrate.
首先,第1,說明本發明之第1特徵之校準部8的實施形態。在本實施形態中,如圖4所示,將基板6與陰蔽 罩大概豎立成垂直而進行。另外,為了進行校準之機構部係盡可能,設置於真空蒸鍍室1之外側的大氣側,具體而言係設置於真空蒸鍍室1之上部壁1T上,或者下部壁1Y下。另外,必須設置於真空蒸鍍室1bu內之構成,係從大氣部設置凸部而設置於其中。 First, an embodiment of the aligning unit 8 according to the first feature of the present invention will be described. In this embodiment, as shown in FIG. 4, the substrate 6 and the shadow are shielded. The cover is erected vertically. Further, the mechanism for calibrating is provided on the atmosphere side outside the vacuum vapor deposition chamber 1 as much as possible, specifically, on the upper wall 1T of the vacuum deposition chamber 1, or under the lower wall 1Y. In addition, it is necessary to provide a configuration in the vacuum vapor deposition chamber 1bu, and a convex portion is provided from the atmosphere portion and provided therein.
在本實施形態中,校準時係固定基板6,移動陰蔽罩81,呈可蒸鍍於基板6之必要部分地進行位置調整。 In the present embodiment, during the calibration, the substrate 6 is fixed, the shadow mask 81 is moved, and the position is adjusted by being necessary to be vapor-deposited on the substrate 6.
以下,對於校準部8之機構與其動作加以說明。 Hereinafter, the mechanism of the calibration unit 8 and its operation will be described.
校準部8係由陰蔽罩81、固定陰蔽罩81之校準基底82、保持校準基底82,規定校準基底82,即在陰蔽罩81之XZ平面的姿勢之校準驅動部83、從下支持校準基底82,與校準驅動部83進行協調而規定陰蔽罩81之姿勢的校準傳動部84、檢測設置於基板6與前述陰蔽罩81之後述的校準標記之校準光學系統85、處理校準標記之影像,求得校準量,控制校準驅動部83之控制裝置60(參照圖8)所成。 The aligning portion 8 is provided with a squeegee 81, a calibrating base 82 for fixing the hood 81, a calibrating substrate 82, and a calibrating substrate 82, that is, a calibrating driving portion 83 in the XZ plane of the hood 81, and supporting from below. The calibration substrate 82, the calibration transmission portion 84 that coordinates the posture of the shadow mask 81 in coordination with the calibration driving portion 83, the calibration optical system 85 that detects the calibration marks provided on the substrate 6 and the aforementioned shadow mask 81, and the processing calibration mark The image is obtained by obtaining the calibration amount and controlling the control device 60 (see FIG. 8) of the calibration drive unit 83.
首先,圖5顯示陰蔽罩81。陰蔽罩81係由光罩81M與框體81F所成,例如對於G6之基板尺寸1500mm×1800mm而言之尺寸,係成為2000mm×2000mm程度,其重量亦成為300Kg。對於光罩81M係有為了規定蒸鍍位置的窗。例如在形成發光成紅(R)的蒸鍍膜時,係於對應於R的部份有窗。此窗的尺寸係根據顏色有所差異,但平均為寬度為30μm、高度為150μm程度。光罩81M之厚度乃50μm程度、往後有成為更薄之傾向。另一方面,對 於光罩81M,係於精密校準標記81m為4處,粗校準標記81mr為2處,計6處,設置有校準標記81m。對應於此,對於基板,亦於精密校準標記6ms為4處,粗校準標記6mr為2處之計6處,設置有校準標記6m。 First, FIG. 5 shows a shadow mask 81. The shadow mask 81 is formed by the mask 81M and the frame 81F. For example, the size of the substrate of the G6 is 1500 mm × 1800 mm, and the size is about 2000 mm × 2000 mm, and the weight is also 300 kg. The mask 81M has a window for defining a vapor deposition position. For example, when a vapor deposited film which emits red (R) is formed, there is a window corresponding to the portion corresponding to R. The size of this window varies depending on the color, but the average width is 30 μm and the height is 150 μm. The thickness of the photomask 81M is about 50 μm, and tends to be thinner in the future. On the other hand, right In the mask 81M, the precision alignment mark 81m is four, and the coarse calibration mark 81mr is two, and six points are provided, and the calibration mark 81m is provided. Corresponding to this, the substrate is also provided with four calibration marks 6ms and six coarse calibration marks 6mr at two places, and a calibration mark 6m is provided.
校準基底82係具有保持陰蔽罩81之上部及下部的保持部82u、82d,陰蔽罩81之背側係呈可蒸鍍於基板6地成為有如回字狀之空洞。另外,校準基底82係經由接近在其四角,於上部2處81a、81b,設置於其2處各下方之81c、81d之計4處的旋轉支持部,可旋轉地加以支持。 The calibration substrate 82 has holding portions 82u and 82d that hold the upper and lower portions of the shadow mask 81. The back side of the shadow mask 81 is a cavity that can be vapor-deposited on the substrate 6 and has a shape like a letter. Further, the calibration base 82 is rotatably supported by a rotation support portion which is disposed at four corners 81a and 81b at the upper portions 2, 81a, 81b, and at the lower portions 81c and 81d of the two places.
接著,對於規定陰蔽罩81之姿勢的校準驅動部83與校準傳動部84加以說明。首先,說明4個旋轉支持部的動作,並說明4個旋轉支持部隨著驅動或旋轉支持部的動作之校準驅動部83與校準傳動部84之構成與動作。 Next, the calibration drive unit 83 and the calibration transmission unit 84 that define the posture of the shadow mask 81 will be described. First, the operation of the four rotation support portions will be described, and the configuration and operation of the calibration drive unit 83 and the calibration transmission unit 84 in accordance with the operation of the drive or rotation support unit by the four rotation support portions will be described.
前述4個旋轉支持部之中,將旋轉支持部81a主動(主動地進行驅動)於Z方向,將旋轉支持部81b主動於Z方向及X方向時,藉由校準基底82,旋轉支持部81a係傳動於X方向,旋轉支持部81c、81d係將經由前述主動之複合作用的旋轉支持部81a作為支點,進行傳動旋轉。 Among the four rotation support portions, the rotation support portion 81a is actively (actively driven) in the Z direction, and when the rotation support portion 81b is activated in the Z direction and the X direction, the rotation support portion 81a is calibrated by the base 82. In the X direction, the rotation support portions 81c and 81d perform transmission rotation by using the rotation support portion 81a of the active combined action as a fulcrum.
連結各旋轉支持部與後述之驅動部或傳動部之作用點的校準軸83a、84a係未經由栓槽83s、84s而傾斜,垂直於Z方向且/或平行移動於X方向。因此,各旋轉支持部係對於校準基底82而言,可旋轉地加以安裝。隨之,前述旋轉支持部81c、81d之傳動旋轉係成為分解成X方向 及Z方向之動作。 The alignment shafts 83a and 84a that connect the respective rotation support portions and the action points of the drive unit or the transmission unit to be described later are not inclined via the pin grooves 83s and 84s, and are perpendicular to the Z direction and/or parallel to the X direction. Therefore, each of the rotation support portions is rotatably attached to the calibration base 82. Accordingly, the transmission rotation of the rotation support portions 81c and 81d is decomposed into the X direction. And the action in the Z direction.
即,在本實施形態中,經由旋轉支持部81a、81b之Z方向的移動,進行Z位置之補正,另外經由兩者的差,進行旋轉補正,更且經由旋轉支持部81b之X方向的移動,進行X位置補正。另外,旋轉支持部81a、81b之兩者間的距離為長的情況,對於同樣Z方向的動作而言,有著可精確度佳地進行旋轉補正之優點。 In other words, in the present embodiment, the Z position is corrected by the movement of the rotation support portions 81a and 81b in the Z direction, and the rotation correction is performed via the difference between the two, and the movement in the X direction via the rotation support portion 81b. , X position correction. Further, the distance between the rotation support portions 81a and 81b is long, and the rotation in the same Z direction has an advantage that the rotation can be accurately corrected.
驅動上述之旋轉支持部81a、81b之陰蔽罩驅動部83係由設置於真空蒸鍍室1bu之上壁部1T(亦參照圖2)上的大氣中,具有移動旋轉指示部81a於Z方向之Z驅動部83Z的左驅動部83L,和具有將旋轉支持部81b,與左驅動部83L同樣地移動於Z方向之Z驅動部83Z,與將前述Z驅動部全體移動於X方向(圖Z之左右方向)之X驅動部83X的右驅動部83R所成。左右驅動部83L、83R之Z驅動部係基本上為相同構成之故,附上相同符號,且省略一部分符號。以下,符號之附加方式,省略方式係在機構部上亦為相同。 The shade cover driving unit 83 that drives the above-described rotation support portions 81a and 81b is provided in the atmosphere on the upper wall portion 1T (see also FIG. 2) of the vacuum vapor deposition chamber 1bu, and has a movement rotation instruction portion 81a in the Z direction. The left drive unit 83L of the Z drive unit 83Z has a Z drive unit 83Z that moves the rotation support unit 81b in the Z direction in the same manner as the left drive unit 83L, and moves the entire Z drive unit in the X direction (FIG. Z). In the left-right direction, the right drive unit 83R of the X drive unit 83X is formed. The Z drive units of the left and right drive units 83L and 83R have substantially the same configuration, and the same reference numerals are attached thereto, and a part of the symbols are omitted. Hereinafter, the manner in which the symbols are added and the omitted modes are the same in the mechanism portion.
將左驅動部83L舉例說明Z驅動部83Z。Z驅動部83Z係加以固定於如前述,在軌道83r上傳動於X方向之Z驅動部固定板83k,經由Z方向驅動馬達83zm,藉由滾動螺旋83n、推拔83t,移動連結棒83j於Z方向。校準軸83a係經由在其上部連結之連結棒83j,移動於Z方向。推拔83t係利用校準基底82等之重力,為了防止前述Z方向之空轉而設置之構成,其結果,遲滯性消失而有及早 到達目標值之效果。另外,各校準軸83a,係藉由固定一端於設置於真空蒸鍍室1bu之上部壁1T的密封部(未圖示)之伸縮管83v而進行動作。 The Z drive unit 83Z will be described by exemplifying the left drive unit 83L. The Z driving unit 83Z is fixed to the Z driving unit fixing plate 83k that is driven in the X direction on the rail 83r as described above, and drives the motor 83zm via the Z direction, and the moving screw 83n is pushed and pulled 83t to move the connecting rod 83j to the Z. direction. The calibration shaft 83a is moved in the Z direction via a connecting rod 83j connected at its upper portion. The push 83t system uses the gravity of the calibration substrate 82 or the like, and is configured to prevent the idling in the Z direction. As a result, the hysteresis disappears and there is an early The effect of reaching the target value. Further, each of the calibration shafts 83a is operated by a telescopic tube 83v having a sealing portion (not shown) provided at one end portion 1T of the vacuum vapor deposition chamber 1bu.
右驅動部83R係更加上於前述Z驅動部83Z,具有固定於真空蒸鍍室1bu之上部壁1T,將搭載Z驅動部83Z之Z驅動部固定板83k,沿著X軸軌道83r上而進行驅動之X驅動部83X。X驅動部83X的驅動方法係將X方向驅動馬達83xm之旋轉力,藉由滾動螺旋83n等,基板上與Z驅動部83Z相同,但其驅動力係需要將校準基底82,藉由旋轉驅動及校準基底而移動其他之驅動部或傳動部的動力。右驅動部83R之校準軸83a係因亦移動於X方向之故,其伸縮管83v亦具有對於X方向而言之自由度,在伸縮的同時,於左右具有柔軟性。 The right driving unit 83R is further provided on the Z-drive unit 83Z, and has a wall portion 1T fixed to the vacuum vapor deposition chamber 1bu, and the Z-drive portion fixing plate 83k on which the Z-drive portion 83Z is mounted is mounted along the X-axis rail 83r. The X drive unit 83X is driven. The driving method of the X driving unit 83X is to rotate the driving force of the motor 83xm in the X direction, and the substrate is the same as the Z driving unit 83Z by the rolling screw 83n or the like. However, the driving force is required to rotate the driving substrate 82 by the rotation and Calibrate the substrate to move the power of the other drive or transmission. Since the calibration shaft 83a of the right driving portion 83R is also moved in the X direction, the telescopic tube 83v also has a degree of freedom in the X direction, and has flexibility in the right and left while stretching.
校準傳動部84係具有呈可對應於旋轉支持部81c、81d之前述的傳動旋轉地,將各校準軸84a移動於Z方向、X方向之左右的傳動部84L、84R。傳動部係亦可於中心部設置1處,但在本實施形態中,為了安定進行動作而設置2處。兩傳動部係基本上,於左右線對稱具有同一構造之故,作為代表加以說明84R。校準軸84a係與固定一端於設置於真空蒸鍍室1bu之下部壁1Y的密封部84c之伸縮管83v同樣地,藉由密封處理室1bu之真空的伸縮管84v、栓槽84s,加以固定於X軸傳動板84k。因此,X方向之傳動係移動在敷設於固定校準傳動部84之校準支持部固定台84b的軌道84r而進行,Z方向之被動係經由前 述栓槽84s而進行。 The calibration transmission portion 84 has transmission portions 84L and 84R that move the respective calibration shafts 84a to the left and right in the Z direction and the X direction in accordance with the above-described transmission rotation of the rotation support portions 81c and 81d. The transmission unit may be provided at one center portion. However, in the present embodiment, two positions are provided for the operation in stability. The two transmission portions are basically the same structure in the left and right line symmetry, and 84R is explained as a representative. Similarly to the bellows 83v in which the fixed end is fixed to the sealing portion 84c of the wall portion 1Y of the vacuum vapor deposition chamber 1bu, the calibration shaft 84a is fixed to the bellows 84v and the bolt groove 84s which seal the vacuum of the processing chamber 1bu. X-axis drive plate 84k. Therefore, the drive train in the X direction is moved on the rail 84r of the calibration support portion fixing base 84b of the fixed calibration transmission portion 84, and the passive direction in the Z direction is passed. The pinning groove 84s is performed.
在前述之校準部的實施形態中,經由將4處之旋轉支持部81之中設置2處於真空蒸鍍室上部之旋轉支持部,主動於Z方向,另外將其中1處主動(主動地驅動)於X方向之時,實施陰蔽罩之校準。除此之外,可舉出各種驅動方法。例如,於上部3處,設置旋轉支持部,旋轉中央之旋轉支持部,由左右之旋轉支持部而主動或傳動於Z方向與X方向進行校準。於下部,至少設置1處之傳動部。或者與上述實施形態同樣地,設置2處上部旋轉支持部,於其1處進行旋轉,集中Z方向及X方向之主動,其他係亦有作為傳動之方法。另外,在上述實施形態中,基本上,將上部作為主動,將下部作為傳動,但亦可將此作為相反。 In the embodiment of the aligning unit described above, one of the four rotating support portions 81 is placed in the upper portion of the vacuum vapor deposition chamber, and the one is actively activated (actively driven) in the Z direction. In the X direction, the calibration of the shadow mask is performed. In addition to this, various driving methods can be cited. For example, at the upper portion 3, a rotation support portion is provided, and the rotation support portion at the center is rotated, and the left and right rotation support portions are actively or calibrated in the Z direction and the X direction. In the lower part, at least one transmission portion is provided. Alternatively, as in the above-described embodiment, two upper rotation support portions are provided, and one of them is rotated to concentrate the Z direction and the X direction, and other systems are also used as the transmission method. Further, in the above-described embodiment, basically, the upper portion is taken as the active and the lower portion is used as the transmission, but this may be reversed.
在前述校準部8的實施形態中,將校準驅動部83、校準傳動部84、校準光學系統85,設置於真空蒸鍍室1bu之上部或下部之大氣側,但亦可設置於真空蒸鍍室1bu之側壁的大氣側。當然,亦可分散於上部、下部及側壁部。 In the embodiment of the calibration unit 8, the calibration drive unit 83, the calibration transmission unit 84, and the calibration optical system 85 are provided on the air side of the upper portion or the lower portion of the vacuum deposition chamber 1bu, but may be provided in the vacuum evaporation chamber. The atmospheric side of the side wall of 1bu. Of course, it can also be dispersed in the upper part, the lower part and the side wall part.
接著,說明本發明之第2特徵的校準光學系統85之一實施形態。本實施形態之校準光學系統係呈可獨立攝影前述之各校準標記地,由對於4個精密校準標記81ms而言之4個精密校準光學系統85s,和對於2個粗校準標記81mr而言之2個粗校準光學系統85r之計6個光學系統所構成。 Next, an embodiment of the calibration optical system 85 according to the second feature of the present invention will be described. The calibration optical system of the present embodiment is capable of independently photographing each of the aforementioned calibration marks, from four precision calibration optical systems 85s for four precision calibration marks 81ms, and for two coarse calibration marks 81mr. The two coarse calibration optical systems 85r are composed of six optical systems.
於圖6顯示6個校準光學系統之基本構成。光學系統之基本構成係設置夾持陰蔽罩81,於校準基底82側,具有光學視窗85ws於前端,固定於真空蒸鍍室1bu之上部1T,藉由光學視窗85w而照射的光源85k與固定於後述之遮斷支架85as之光源側反射鏡85km,於基板6側,設置安裝於從攝影機收納筒85t之支架85a的攝影機側反射鏡85cm,及收納於攝影機收納筒85t之攝影手段之攝影機85c,具有所謂透過型之構成。攝影機收納筒85t、支架85a等係呈未成為基板乃成為垂直姿勢時之軌道K的阻礙地,至以虛線所示之支架85a位置,可經由伸縮管85v等而移動。 The basic configuration of the six calibration optical systems is shown in FIG. The basic structure of the optical system is provided with a nip mask 81, on the side of the calibration substrate 82, having an optical window 85ws at the front end, fixed to the upper portion 1T of the vacuum evaporation chamber 1bu, and a light source 85k and fixed by the optical window 85w. A light source side mirror 85 km of the blocking bracket 85 as described later is provided, and a camera side mirror 85 cm attached to the holder 85 a of the camera housing tube 85 t and a camera 85 c mounted in the camera storage unit 85 t are provided on the substrate 6 side. It has a so-called transmissive structure. The camera housing tube 85t, the holder 85a, and the like are not obstructed by the rail K when the substrate is in the vertical posture, and can be moved to the position of the holder 85a indicated by a broken line via the extension tube 85v or the like.
因為透過型之故,呈光可通過地,於光罩81M設置4角形之貫通孔的校準標記81m,更且對於框體81F亦設置圓筒狀之貫通孔81k。另一方面,基板6之校準標記6m係比較於在光透過性之基板的上方,作為金屬性之四角形的陰蔽罩之校準標記81m,為相當小的標記。 Because of the transmission type, the alignment mark 81m of the through-hole of the rectangular shape is provided in the mask 81M, and the cylindrical through-hole 81k is also provided in the frame 81F. On the other hand, the alignment mark 6m of the substrate 6 is a relatively small mark as a calibration mark 81m which is a metallic quadrangular shadow mask above the light-transmitting substrate.
當設置貫通孔81k時,在蒸鍍時蒸鍍材料則進入貫通孔,蒸鍍於校準標記上之故,從接下來的工程無法進行校準。為了防止此,對於在蒸鍍時,作為蒸鍍材料呈不會進入至貫通孔81k地進行遮蔽。在本實施形態中,於校準時設置光源側反射鏡之支架乃於蒸鍍時係對於蒸鍍遮斷有效的範圍之故,作為將其支架作為可移動,且對於蒸鍍時係具有遮蔽貫通孔81k構造之遮蔽型支架85as。遮蔽型支架85as係經由對於設置於大氣側的驅動馬達(未圖示),驅 動成上下之連結棒85b進行伸縮,將其一端,藉由固定於密封部85s之伸縮管85v加以驅動。圖6所示之虛線乃顯示遮蔽狀態,實線乃顯示校準狀態。 When the through hole 81k is provided, the vapor deposition material enters the through hole at the time of vapor deposition, and is vapor-deposited on the calibration mark, so that calibration cannot be performed from the next process. In order to prevent this, it is shielded as a vapor deposition material from entering the through hole 81k at the time of vapor deposition. In the present embodiment, the holder for providing the light source side mirror during the calibration is effective in the vapor deposition interruption during vapor deposition, and the holder is made movable, and the vapor deposition is shielded. A shield bracket 85as constructed of a hole 81k. The shielding bracket 85as is driven by a driving motor (not shown) provided on the atmosphere side. The upper and lower connecting rods 85b are expanded and contracted, and one end thereof is driven by a telescopic tube 85v fixed to the sealing portion 85s. The dotted line shown in Fig. 6 shows the occlusion state, and the solid line shows the calibration state.
於圖7顯示其他的實施形態。如圖7(a)所示,陰蔽罩之框體81F的厚度乃如充分,於框體81F設置L字形之貫通孔81k,將光源85k,與光源側反射鏡85km同時內藏亦可。此情況,框體81F本身乃達成遮蔽體之作用之故,無需遮蔽型之支架。 Another embodiment is shown in FIG. As shown in Fig. 7 (a), the thickness of the frame 81F of the shadow mask is sufficient, and the L-shaped through hole 81k is provided in the frame 81F, and the light source 85k and the light source side mirror 85 km may be simultaneously accommodated. In this case, the frame body 81F itself functions as a shielding body, and a shield type bracket is not required.
另外,如圖7(b)所示,於校準時,光源側反射鏡85km乃未遮斷蒸鍍範圍之情況,係可於校準基底82,將遮蔽型支架做成固定,可經常做成遮蔽狀態者。 Further, as shown in FIG. 7(b), at the time of calibration, the light source side mirror 85 km does not interrupt the vapor deposition range, and the shield base can be fixed to the calibration base 82, and can be often shielded. State.
另外,如圖7(b)所示,在攝影機側,加長攝影機收納筒85t,內藏光源側反射鏡85km亦可。 Further, as shown in FIG. 7(b), the camera housing tube 85t is lengthened on the camera side, and the light source side mirror 85 km may be incorporated.
更且,如圖7(c)所示,於光源側開口部,在遮蔽光纖85f之一端的狀態進行固定,將另一端連接於設置於大氣側的光源85k。在本實施形態中,可將發熱體之光源,以簡單的構造設置於大氣側,無需設置特別的遮蔽體。 Further, as shown in FIG. 7(c), the light source side opening portion is fixed in a state in which one end of the optical fiber 85f is shielded, and the other end is connected to the light source 85k provided on the atmosphere side. In the present embodiment, the light source of the heat generating body can be installed on the atmosphere side with a simple structure, and it is not necessary to provide a special shielding body.
更且,在其他的目的,設置於真空蒸鍍室1bu之構造物乃在蒸鍍時,如達成遮蔽體之作用,無需設置新的遮蔽體。 Further, for other purposes, when the structure provided in the vacuum deposition chamber 1bu is vapor-deposited, it is not necessary to provide a new shielding body as long as the shielding body is achieved.
另一方面,攝影機收納筒85t係做成如圖4所示,具有從真空蒸鍍室1bu之上部1T突出之構造,於前端設置光學視窗85w,將攝影機85c維持於大氣側之同時,可攝影校準標記6m、81m(符號係參照圖6)。 On the other hand, as shown in FIG. 4, the camera housing tube 85t has a structure that protrudes from the upper portion 1T of the vacuum vapor deposition chamber 1bu, and an optical window 85w is provided at the distal end to hold the camera 85c on the atmospheric side while being photographable. Calibration marks 6m, 81m (see Figure 6 for symbols).
另外,於蒸鍍面側設置光源,但改變位置而設置攝影機亦可。 Further, a light source is provided on the vapor deposition surface side, but a camera may be provided to change the position.
精密校準光學系統85s與粗校準光學系統85r之構成上的不同係前者為了高精確地進行校準,具有縮小視野,以高解析攝影校準之高倍率透鏡85h的點。伴隨於此,圖3所示之基板及陰蔽罩的校準標記6m、81m的尺寸乃不同。視野係精密校準之情況,與粗校準做比較,小1位數以上,最終可進行μm等級之校準。 The difference between the precision calibration optical system 85s and the coarse calibration optical system 85r is that the former has a narrow field of view and a high magnification lens 85h that is calibrated with high resolution photography for high precision calibration. Along with this, the dimensions of the alignment marks 6m and 81m of the substrate and the shadow mask shown in FIG. 3 are different. The field of view is precisely calibrated. Compared with the coarse calibration, it is less than one digit, and finally it can be calibrated in μm.
隨之,精密校準時係呈不離開視野地配合陰蔽罩81之校準81m的移動,精密校準光學系統85s亦有跟隨移動之必要。將各固定攝影機85c與光源85k之固定板85p、85ps,連接Z驅動部固定板83k或X軸傳動板84k而進行跟隨。另外,對於粗校準光學系統85r,係呈於初期的安裝時,可進行位置調整地,設置攝影機位置調整平台85d。 Accordingly, during the precision calibration, the movement of the alignment 81m of the shadow mask 81 is performed without leaving the field of view, and the precision calibration optical system 85s also has to follow the movement. The fixed cameras 85c and the fixed plates 85p and 85ps of the light source 85k are connected to the Z drive unit fixing plate 83k or the X-axis drive plate 84k to follow. Further, the rough calibration optical system 85r is provided with a camera position adjustment platform 85d at the time of initial installation and position adjustment.
在前述實施形態中,使用6個校準光學形態,經由校準之要求精確度,係無需設置粗校準光學系統,更且對於精密校準光學系統,亦無需4個,而包含粗.精密,最低如有2個即可。 In the foregoing embodiment, six calibration optical forms are used, and the required accuracy is not required to be set, and there is no need to provide a coarse calibration optical system, and for the precision calibration optical system, four are not required, and the thickness is included. Precision, the minimum is 2.
接著,說明於本發明之第3特徵的校準實施前,將基板立起,在校準結束後,將基板6接近於陰蔽罩之機構之一實施形態。圖3所示之處理遞送部9係具有:作為未與輸送機械手臂5之梳狀手部58干擾,可遞送基板6之梳狀手部91,和於前述梳狀手部91上,固定載置某基板6 ,將其基板6旋轉而立起之基板旋轉手段93,與更加地,接近於校準部8之基板接近手段93G所成之基板旋轉接近手段93A。作為前述固定之手段,係考慮為真空中的情況,由靜電吸付或機械性夾鉗等構成,設置於至少將基板立起時之上部側94u。 Next, an embodiment in which the substrate is raised and the substrate 6 is brought close to the shadow mask after the calibration is completed will be described before the calibration of the third feature of the present invention. The process delivery unit 9 shown in Fig. 3 has a comb-like hand 91 that can deliver the substrate 6 without interfering with the comb-like hand 58 of the transport robot 5, and is fixed on the comb-shaped hand 91. Place a substrate 6 The substrate rotating means 93 for rotating the substrate 6 and the substrate rotating approach means 93A formed by the substrate approach means 93G close to the aligning portion 8 are further provided. The means for fixing is a vacuum suction or a mechanical clamp, and is provided on the upper side 94u when the substrate is raised at least.
圖8係詳細顯示基板旋轉接近手段93A,並且,顯示作為呈未有來自配線之被覆材等之排氣的問題,或由配線疲勞產生損傷之流體洩漏之虞等之真空內配線.配管機構之適用圖。 Fig. 8 is a view showing the substrate rotation approach means 93A in detail, and shows a vacuum inner wiring which is a problem of exhaust gas which is not provided with a wiring material such as wiring, or a fluid leakage which is damaged by wiring fatigue. Applicable diagram of the piping mechanism.
首先,說明基板旋轉接近手段93A之基板旋轉手段93。基板旋轉手段93係由載置基板6之載置台93d,和蒸鍍時冷卻基板6之冷卻套93j,和將基板6、載置台93d及冷卻套93j,成為一體旋轉之基板旋轉驅動部93b、可旋轉地支持冷卻套93j等之旋轉支持台93k加以構成。對於冷卻套93j係敷設有冷卻水管43、44。另外,基板旋轉驅動部93b係具有設置於大氣側之旋轉用馬達93sm,和經由旋轉用馬達93sm,藉由齒輪93h1、93h2而旋轉於箭頭A的方向之中空的第1連桿41,和於第1連桿41,呈具有與第1連桿之中空部連續之中空部地加以固定,沿著前述冷卻套93j的側面部加以設置之第2連桿42。然而,第1連桿係於設置於真空蒸鍍室1bu之側壁的密封部93s,介入存在有固定一端之伸縮管93v,經由旋轉支持台93k,可旋轉地加以支持。然而,旋轉用馬達93sm係由設置於大氣側之控制裝置60加以控制。 First, the substrate rotation means 93 of the substrate rotation approach means 93A will be described. The substrate rotating means 93 is a mounting table 93d on which the substrate 6 is placed, a cooling jacket 93j for cooling the substrate 6 during vapor deposition, and a substrate rotation driving portion 93b for integrally rotating the substrate 6, the mounting table 93d, and the cooling jacket 93j. The rotation support table 93k such as the cooling jacket 93j is rotatably supported. Cooling water pipes 43, 44 are applied to the cooling jacket 93j. Further, the substrate rotation driving unit 93b includes a rotation motor 93sm provided on the atmosphere side, and a first link 41 that is hollow in the direction of the arrow A via the rotation motor 93sm by the gears 93h1, 93h2, and The first link 41 is fixed to the hollow portion continuous with the hollow portion of the first link, and is provided along the side surface portion of the cooling jacket 93j. However, the first link is attached to the seal portion 93s provided on the side wall of the vacuum vapor deposition chamber 1bu, and the extension tube 93v having the fixed end is interposed, and is rotatably supported via the rotation support table 93k. However, the rotation motor 93sm is controlled by the control device 60 provided on the atmospheric side.
在上述中,經由支持唯由圖3所示之固定手段94之中,設置於基板上部之固定手段94u所立起之基板6之時,基板6係經由自重而消解彎曲。在消解其彎曲之後,由設置於基板下部的固定手段94d,固定全體亦可。另外,當垂直地立起基板6時,因於基板6與載置台93d之間,亦有產生微小間隙之可能性之故,例如1度程度,多少傾斜安定載置之同時,可確實地消除此等彎曲者。 In the above, when the substrate 6 which is provided by the fixing means 94u on the upper portion of the substrate is supported by the fixing means 94 shown in FIG. 3, the substrate 6 is bent and bent by its own weight. After the bending is digested, the fixing means 94d provided on the lower portion of the substrate may be fixed. Further, when the substrate 6 is vertically erected, there is a possibility that a slight gap is generated between the substrate 6 and the mounting table 93d. For example, the degree of tilting is stable at the same time as 1 degree, and can be surely eliminated. These benders.
在本實施形態中,將基板蒸鍍面做成上面而進行輸送之故,如將基板6立起,可直接進行校準。 In the present embodiment, the substrate vapor deposition surface is formed as an upper surface and transported. If the substrate 6 is raised, the calibration can be performed directly.
接著,對於基板接近手段93G加以說明。基板接近手段93G(基板接近驅動部93g)係具有固定基板旋轉驅動部93b,於箭頭B方向,移動在軌道93r上之旋轉驅動部載置台93t、將旋轉驅動部載置台93t,藉由滾動螺旋93n而驅動之接近用馬達93dm。由將如此之機構,經由控制裝置60而進行控制者,將基板6接近於陰蔽罩81,如有必要可加以緊密。 Next, the substrate approach means 93G will be described. The substrate approaching means 93G (substrate approaching drive unit 93g) has a fixed substrate rotation drive unit 93b, a rotation drive unit mounting table 93t that moves on the rail 93r in the direction of the arrow B, and a rotation drive unit mounting table 93t. 93n is driven by the proximity motor 93dm. By controlling such a mechanism via the control device 60, the substrate 6 is brought close to the shadow mask 81, and if necessary, it can be tight.
如根據上述實施形態,在蒸鍍時可消解基板之彎曲。另外,保持基板與陰蔽罩不會接觸之距離,可進行校準,之後由將基板接近或緊密於陰蔽罩者,可降低在蒸鍍之模糊,成為可進行高精確度之蒸鍍。 According to the above embodiment, the bending of the substrate can be eliminated at the time of vapor deposition. In addition, the distance between the substrate and the shadow mask can be kept, and the substrate can be calibrated. Then, when the substrate is brought close to or close to the shadow mask, the blurring of the vapor deposition can be reduced, and the vapor deposition can be performed with high precision.
更且,基板旋轉接近手段93A係具有作為呈未有來自配線之被覆材之排氣的問題,或由配線疲勞產生損傷之流體洩漏之虞等之真空內配線.配管機構。真空內配線.配管機構40係由上述第1連桿41及第2連桿42加以構成 ,對於其中空部,係為了流動冷卻水於冷卻套93j,配設有供給用43與回收用44之冷卻水配管。各連桿係由具有耐銹強,相當強度之金屬,例如不鏽鋼、鋁加以構成,第1連桿41之中空部的旋轉用馬達93sm側係開放於大氣。前述2支冷卻水配管係一般由具有在大氣中所使用之柔軟性的材料而構成,或由金屬性而構成,呈在連桿內未具有可撓部地,配管成由第1連桿41及第2連桿42所形成之形態的L字狀,可撓部係設置於大氣側。如使用後者,更可構成疲勞傷害少之配管。另外,萬一冷卻水從冷卻水配管43、44洩漏,亦可排水於大氣側地,將在前述真空蒸鍍室1bu之側壁的連接部,作為較在冷卻套93j的連接部為低。 Further, the substrate rotation approach means 93A has a problem of a vacuum inner wiring which is a problem of exhaust gas which is not provided with a wiring material, or a fluid which is damaged by wiring fatigue. Piping mechanism. Wiring within the vacuum. The piping mechanism 40 is configured by the first link 41 and the second link 42 described above. In the hollow portion, a cooling water pipe for the supply 43 and the recovery 44 is disposed in order to flow the cooling water to the cooling jacket 93j. Each of the links is made of a metal having a strong rust resistance and a relatively high strength, for example, stainless steel or aluminum, and the rotating motor 93sm side of the hollow portion of the first link 41 is opened to the atmosphere. The two cooling water piping systems are generally composed of a material having flexibility used in the atmosphere, or are made of a metallic material, and have no flexible portion in the connecting rod, and the piping is formed by the first link 41. The L-shaped shape of the second link 42 is formed, and the flexible portion is provided on the air side. If the latter is used, it can constitute a pipe with less fatigue damage. In addition, if the cooling water leaks from the cooling water pipes 43, 44, it may be drained to the atmosphere side, and the connection portion of the side wall of the vacuum vapor deposition chamber 1bu may be lower than the connection portion of the cooling jacket 93j.
如根據本實施形態之真空內配線.配管機構40,於將一端開放於大氣,將多端連接於移動部之連桿機構的中空部,設置配管,前述連桿機構之旋轉部係加以真空密封,從真空側完全地遮斷之故,萬一即使有從冷卻水配管漏水,亦不會漏水至真空側,另外,無需將連桿機構之中空部做成真空。更且,因將連桿機構,由不鏽鋼或鋁所構成之故,排氣之產生亦少。另外,真空內配線.配管機構乃構成基板旋轉驅動部之一部分之故,作為全體而可做成簡單之構成。在前述的例中,有敷設配管於連桿的例,但即使將信號線配線於連桿內,亦可提供不會招致從信號線產生的排氣於真空內的構成。隨之,可保持高真空,進行信賴性高的蒸鍍之處理者。 Such as the vacuum inner wiring according to the embodiment. The piping mechanism 40 is open to the atmosphere at one end, and is connected to the hollow portion of the link mechanism of the moving portion at a plurality of ends, and a pipe is provided. The rotating portion of the link mechanism is vacuum-sealed and completely blocked from the vacuum side. In the event that water leaks from the cooling water pipe, it does not leak to the vacuum side, and it is not necessary to make the hollow portion of the link mechanism vacuum. Further, since the link mechanism is made of stainless steel or aluminum, the generation of exhaust gas is small. In addition, wiring inside the vacuum. The piping mechanism constitutes a part of the substrate rotation driving unit, and can be configured as a simple unit as a whole. In the above-described example, there is an example in which the piping is laid on the connecting rod. However, even if the signal line is wired in the connecting rod, it is possible to provide a configuration in which the exhaust gas generated from the signal line is not generated in the vacuum. Accordingly, it is possible to maintain a high vacuum and perform a highly reliable vapor deposition process.
接著,將在具有上述之校準部8、校準光學系統85S及基板旋轉接近手段93A之真空蒸鍍室之處理動作,以校準動作為主體進行說明。 Next, the processing operation of the vacuum vapor deposition chamber having the calibration unit 8, the calibration optical system 85S, and the substrate rotation approach means 93A described above will be mainly described with reference to the calibration operation.
以下,顯示基板在輸入至真空蒸鍍室1bu之後的處理流程圖。(1)首先,將輸入至圖3所示之R線路的基板6之上部,固定於基板載置台,之後大概立起成垂直而消解彎曲。(2)由從基板6相距一定距離之狀態,經由粗校準標記而實施粗校準,檢測在粗校準之位置偏移,求取粗補正量。(2)依據其粗補正量,在圖4所示之ZX平面,移動陰蔽罩81而進行粗位置調整。(3)由保持一定的距離,以精密校準標記,實施精密校準,檢測在精密校準之位置偏移,求取精密補正量。(4)依據其精密補正量,在圖4所示之ZX平面,移動陰蔽罩81而進行精密位置調整。(5)緊密基板6與陰蔽罩81。(6)檢測(3)的校準結果(位置偏移)。(7)位置偏移量如為容許範圍,等待圖3所示之L線路之基板之蒸鍍結束。(8)如L線路的蒸鍍結束之後,移動蒸發源71於R線路而進行蒸鍍。(9)在(7)中,位置偏移量如為容許範圍外,暫時將兩者分離,為了進行精密校準而返回至(3)。 Hereinafter, a flow chart of the process after the substrate is input to the vacuum evaporation chamber 1bu is shown. (1) First, the upper portion of the substrate 6 that is input to the R line shown in FIG. 3 is fixed to the substrate stage, and then it is erected vertically to be bent and bent. (2) The rough calibration is performed by the coarse calibration mark from the state in which the substrate 6 is separated by a certain distance, and the position at the coarse calibration is detected to be offset, and the coarse correction amount is obtained. (2) The coarse position adjustment is performed by moving the shadow mask 81 on the ZX plane shown in Fig. 4 in accordance with the rough correction amount. (3) By maintaining a certain distance, precise calibration marks are used to perform precision calibration, and the position of the precision calibration is offset to obtain a precise correction amount. (4) According to the precision correction amount, the shadow mask 81 is moved in the ZX plane shown in Fig. 4 to perform precise position adjustment. (5) The compact substrate 6 and the shadow mask 81. (6) Detect the calibration result (position offset) of (3). (7) If the positional shift amount is an allowable range, the vapor deposition of the substrate of the L line shown in Fig. 3 is waited for. (8) After the vapor deposition of the L line is completed, the evaporation source 71 is moved on the R line to perform vapor deposition. (9) In (7), if the positional shift amount is outside the allowable range, the two are temporarily separated, and the process returns to (3) for precise calibration.
在上述中,粗校準的位置調整係由2台之攝影機85c進行攝影,設置於基板6,如圖3之導引圖所示,攝影陰蔽罩81與基板6之校準標記81mr、6mr,將2個校準的中間點,根本地位置調整成基準者。另一方面,精密校準係於基板的四角附近,設置4個校準標記,將基板的中心 點補正成基準。理論上,對於以2個根本決定之情況而言,4個乃資訊過多。此係經由4角的資訊,四角的偏移乃呈成為最小地,經由將基板的中心點決定成中心之時,基板6與陰蔽罩81之偏移變小,作為製品為了取得大的可有效利用之面積。如粗校準地,將上部中點做成基準時,下部側的偏移變大,作為製品可利用之面積變少。 In the above, the position adjustment of the coarse calibration is performed by two cameras 85c, and is disposed on the substrate 6. As shown in the guide diagram of FIG. 3, the calibration marks 81mr and 6mr of the photographic mask 81 and the substrate 6 will be The middle point of the two calibrations is fundamentally adjusted to the baseline. On the other hand, precision calibration is placed near the four corners of the substrate, and four calibration marks are placed to center the substrate. Point correction is the benchmark. In theory, for the case of two fundamental decisions, four are too much information. This is based on the information of the four corners, and the offset of the four corners is minimized. When the center point of the substrate is determined to be centered, the offset between the substrate 6 and the shadow mask 81 is reduced, and the product can be made large in order to obtain a large size. The area of effective use. When the upper midpoint is made into a reference as in the rough calibration, the offset on the lower side becomes large, and the area available as a product becomes small.
如根據以上說明之本實施形態,可提供由將基板及陰蔽罩做成垂直或大概垂直之狀態,可進行校準之有機電激發光製造裝置。其結果,可提供可排除經由基板或陰蔽罩之自重的彎曲之影響,可消解位置偏移,或經由無法接近基板與陰蔽罩之膜模糊,進而可高精確地蒸鍍,可製造高精彩之基板的有機電激發光製造裝置。 According to the embodiment described above, it is possible to provide an organic electroluminescence light-producing device which can be calibrated by making the substrate and the shadow mask vertical or substantially vertical. As a result, it is possible to eliminate the influence of the bending of the self-weight via the substrate or the shadow mask, to eliminate the positional deviation, or to blur the film through the inaccessible substrate and the shadow mask, thereby enabling high-precision evaporation and high fabrication. An organic electroluminescence manufacturing device for a wonderful substrate.
另外,如根據本實施形態,在對於校準必要之機構,由設置驅動裝置於大氣中者,抑制粉塵或氣體的產生,進而可降低經由粉塵或氣體的蒸鍍不佳,可提供生產性高的有機電激發光製造裝置。 Further, according to the present embodiment, in the mechanism necessary for the calibration, the generation of the driving device in the atmosphere suppresses the generation of dust or gas, and further reduces the vapor deposition by dust or gas, thereby providing high productivity. Organic electroluminescence excitation device.
更且,如根據本實施形態,在對於校準必要之機構,由設置驅動裝置或發熱的機構,或者許多的校準光學系統構成要素於大氣中者,可提供維護性佳,稼働率高之有機電激發光製造裝置。 Further, according to the present embodiment, in the mechanism necessary for the calibration, a mechanism for providing a driving device or a heat generating device or a plurality of components for calibrating the optical system in the atmosphere can provide an organic electric device having excellent maintainability and high yield. Excitation light manufacturing device.
另外,可提供由實施將基板作為中心之校準者,作為製品,可進行有效面積高的蒸鍍,即產率高,即生產性高之有機電激發光製造裝置。 In addition, it is possible to provide a calibrator having a substrate as a center, and as a product, it is possible to carry out vapor deposition with high effective area, that is, an organic electroluminescence manufacturing apparatus having high yield, that is, high productivity.
更且,如根據以上實施形態,可提供由將校準標記作 為透過型者,可確實檢測基板與陰蔽罩之信賴性高之有機電激發光製造裝置。 Moreover, as according to the above embodiment, it may be provided by For the transmissive type, it is possible to reliably detect an organic electroluminescence light-emitting device having high reliability of the substrate and the shadow mask.
至今所說明之實施形態係將基板6與陰蔽罩81立起進行校準,之後保持立起狀態,進行蒸鍍的實施例。未必需要由立起之狀態進行蒸鍍,而經由附加將陰蔽罩遞送至基板側的機構之時,保持校準之狀態,暫時做成水平,之後進行蒸鍍亦可。例如,其第1之方法係經由圖8所示之基板旋轉手段93,再次做成水平,從上部進行蒸鍍的方法。 The embodiment described so far is an embodiment in which the substrate 6 and the shadow mask 81 are erected and calibrated, and then held upright and vapor-deposited. It is not necessary to carry out vapor deposition from the standing state, and when the mechanism for delivering the shadow mask to the substrate side is added, the state of the calibration is maintained, and the level is temporarily set, and then vapor deposition may be performed. For example, the first method is a method of performing vapor deposition from the upper portion via the substrate rotating means 93 shown in FIG.
作為第2之方法,圖3所示之2個處理線路之中,一方作為校準專用線路(例如R線路),將另一方的線路(L線路)作為蒸鍍專用線路之方法。在R線路進行校準之後,經由傳送機械手臂5而移動至L線路。之後,由設置於L線路之基板旋轉手段93進行180度旋轉,從下進行蒸鍍之方法。在本方法中,多少需要處理時間,但亦可於校準專用線路之兩側,由設置蒸鍍專用線路,交互進行處理者。 As a second method, one of the two processing lines shown in FIG. 3 is used as a calibration dedicated line (for example, an R line), and the other line (L line) is used as a dedicated line for vapor deposition. After the R line is calibrated, it is moved to the L line via the transfer robot 5. Thereafter, the substrate rotating means 93 provided on the L line is rotated by 180 degrees to perform vapor deposition from below. In this method, how much processing time is required, but it is also possible to perform processing on the sides of the calibration dedicated line by setting a dedicated evaporation line.
在做成上述之水平進行蒸鍍之實施形態,亦可得到與由立起狀態進行蒸鍍之實施形態同樣之效果。 In the embodiment in which the vapor deposition is performed at the above-described level, the same effects as those of the embodiment in which the vapor deposition is performed in the standing state can be obtained.
在以上說明之實施形態中,說明過將基板做成水平輸送至處理遞送部之情況,但垂直地輸送基板,之後實施校準亦可。 In the embodiment described above, the case where the substrate is horizontally transported to the process delivery unit has been described. However, the substrate may be transported vertically, and then calibration may be performed.
更且,如根據本實施形態,可提供在對於校準需要之機構中,將無法設置於真空中之驅動裝置,可設置於大氣 中之有機電激發光製造裝置。 Furthermore, according to the present embodiment, it is possible to provide a driving device that cannot be installed in a vacuum in a mechanism required for calibration, and can be installed in the atmosphere. Medium organic electroluminescence excitation device.
更且,上述校準機構係亦可適用於在大氣中所進行之液晶顯示裝置等之校準。 Furthermore, the above calibration mechanism can also be applied to calibration of a liquid crystal display device or the like performed in the atmosphere.
另外,可提供由實施將基板作為中心之校準者,作為製品,可進行有效面積高的蒸鍍,即產率高,即生產性高之有機電激發光製造裝置。 In addition, it is possible to provide a calibrator having a substrate as a center, and as a product, it is possible to carry out vapor deposition with high effective area, that is, an organic electroluminescence manufacturing apparatus having high yield, that is, high productivity.
更且,如根據以上實施形態,可提供由將校準標記作為透過型者,可確實檢測基板與陰蔽罩之信賴性高之有機電激發光製造裝置。 Further, according to the above embodiment, it is possible to provide an organic electroluminescence light-producing device which can reliably detect the reliability of the substrate and the shadow mask by using the calibration mark as the transmission type.
至今所說明之實施形態係將基板6與陰蔽罩81立起進行校準,之後保持立起狀態,進行蒸鍍的實施例。未必需要由立起之狀態進行蒸鍍,而經由附加將陰蔽罩遞送至基板側的機構之時,保持校準之狀態,暫時做成水平,之後進行蒸鍍亦可。例如,其第1之方法係經由圖8所示之基板旋轉手段93,再次做成水平,從上部進行蒸鍍的方法。 The embodiment described so far is an embodiment in which the substrate 6 and the shadow mask 81 are erected and calibrated, and then held upright and vapor-deposited. It is not necessary to carry out vapor deposition from the standing state, and when the mechanism for delivering the shadow mask to the substrate side is added, the state of the calibration is maintained, and the level is temporarily set, and then vapor deposition may be performed. For example, the first method is a method of performing vapor deposition from the upper portion via the substrate rotating means 93 shown in FIG.
作為第2之方法,圖3所示之2個處理線路之中,一方作為校準專用線路(例如R線路),將另一方的線路(L線路)作為蒸鍍專用線路之方法。在R線路進行校準之後,經由傳送機械手臂5而移動至L線路。之後,由設置於L線路之基板旋轉手段93進行180度旋轉,從下進行蒸鍍之方法。在本方法中,多少需要處理時間,但亦可於校準專用線路之兩側,由設置蒸鍍專用線路,交互進行處理者。 As a second method, one of the two processing lines shown in FIG. 3 is used as a calibration dedicated line (for example, an R line), and the other line (L line) is used as a dedicated line for vapor deposition. After the R line is calibrated, it is moved to the L line via the transfer robot 5. Thereafter, the substrate rotating means 93 provided on the L line is rotated by 180 degrees to perform vapor deposition from below. In this method, how much processing time is required, but it is also possible to perform processing on the sides of the calibration dedicated line by setting a dedicated evaporation line.
在做成上述之水平進行蒸鍍之實施形態,亦可得到與由立起狀態進行蒸鍍之實施形態同樣之效果。 In the embodiment in which the vapor deposition is performed at the above-described level, the same effects as those of the embodiment in which the vapor deposition is performed in the standing state can be obtained.
在以上說明之實施形態中,說明過將基板做成水平輸送至處理遞送部之情況,但垂直地輸送基板,之後實施校準亦可。 In the embodiment described above, the case where the substrate is horizontally transported to the process delivery unit has been described. However, the substrate may be transported vertically, and then calibration may be performed.
在以上說明之實施形態中,雖在立起的狀態進行校準,但將校準標記作為透過型者、伴隨於此而為了進行蒸鍍,具有遮蔽構造者、設置校準光學系統於大氣側者、另外,其校準光學系統乃跟隨陰蔽罩或基板之校準動作者、設置4個校準,將基板的中心位置,位置調整成基準者等,係亦可適用於做成水平進行校準之方法或構造。 In the above-described embodiment, the alignment is performed in a state of being erected, but the calibration mark is used as a transmissive type, and in order to perform vapor deposition, the shielding structure is provided, the calibration optical system is installed on the atmosphere side, and The calibration optical system is a method or structure for performing calibration by following the calibration of the mask or the substrate, setting four calibrations, and adjusting the center position and position of the substrate to the reference.
接著,說明具有補正本發明之第4特徵的陰蔽罩之彎曲的基板端部緊密手段之一實施形態。圖9係顯示輸入基板至前述之真空蒸鍍室1bu之後的處理流程圖,更且顯示加上補正陰蔽罩之彎曲的處理之處理流程圖。在本實施形態中,如圖9所示,即使基板尺寸為大,基板與陰蔽罩間的間隙乃數μm前後呈可蒸鍍地,首先,(1)將基板輸入至處理遞送部9,之後,(2)將前述基板立起成略垂直,接著,(3)將基板6,從陰蔽罩81接近至相距一定的距離,例如0.5mm之位置,(4)補正與經由陰蔽罩之彎曲的基板之間隙,(5)由此狀態進行校準。校準結束後,(6)緊密基板6與陰蔽罩81,(7)將蒸鍍材料蒸鍍於基板。 Next, an embodiment of a substrate end tightness method for correcting the bending of the shadow mask according to the fourth feature of the present invention will be described. Fig. 9 is a flow chart showing the processing after the input substrate is applied to the vacuum evaporation chamber 1bu described above, and further shows a processing flow of the process of correcting the bending of the shadow mask. In the present embodiment, as shown in FIG. 9, even if the substrate size is large, the gap between the substrate and the shadow mask is vapor-depositable several microseconds. First, (1) the substrate is input to the processing and delivery unit 9, Then, (2) the substrate is raised to be slightly vertical, and then (3) the substrate 6 is approached from the shadow mask 81 to a certain distance, for example, 0.5 mm, (4) corrected and passed through the shadow mask. The gap between the curved substrates, (5) is calibrated in this state. After the calibration is completed, (6) the compact substrate 6 and the shadow mask 81, and (7) the vapor deposition material is vapor-deposited on the substrate.
蒸鍍結束後,(8)將基板6,從陰蔽罩81相距一定 的距離,(9)解除(4)的補正,(10)將基板及其他做成水平,(11)從處理遞送部9輸出基板。 After the vapor deposition is completed, (8) the substrate 6 is separated from the shadow mask 81 by a certain distance. The distance is (9) the correction of (4) is released, (10) the substrate and the other are leveled, and (11) the substrate is output from the processing delivery unit 9.
在上述步驟中,於(5)的校準前,實施步驟(4),但亦可於校準後或步驟(6)之後實施,另外,於(8)之後實施步驟(9),但亦可於(8)之前實施。 In the above steps, step (4) is performed before the calibration of (5), but may be performed after the calibration or after the step (6), and after the step (9), the step (9) may be performed. (8) Previous implementation.
因此,依序說明上述本實施形態之步驟之中,實現(2)~(6)及(8)~(10)步驟之構成及動作。圖10係顯示上述步驟之中,實現(2)(10)之基板旋轉手段93、實現(3)(6)(8)之基板接近手段93G、及實現(4)(9)之基板端部緊密手段94之圖3所示之處理遞送部9的圖,並且,顯示適用消解來自配線之被覆材的排氣問題之真空內配線機構的圖。 Therefore, the steps and operations of the steps (2) to (6) and (8) to (10) are realized in the steps of the above-described embodiment. Fig. 10 is a view showing the substrate rotating means 93 for realizing (2) and (10), the substrate approaching means 93G for realizing (3) (6) and (8), and the substrate end portion of the realization (4) (9) among the above steps. A diagram of the processing delivery unit 9 shown in FIG. 3 of the close means 94 is shown, and a diagram showing a vacuum internal wiring mechanism for applying an exhaust problem of the coating material from the wiring is shown.
首先,使用圖10,說明實現(2)(10)之基板旋轉手段93。基板旋轉手段93係將載置、保持輸入至處理遞送部9之基板6的基板保持器91、基板6及後述之基板端部緊密手段94,在成為一體實施校準前,立起成略垂直,在校準結束後,係具有返回成水平狀態之機能。作為前述固定之手段係考慮為真空中之情況,由靜電吸付或機械性夾鉗等而構成。 First, the substrate rotating means 93 for realizing (2) (10) will be described using FIG. The substrate rotating means 93 is a substrate holder 91 that mounts and holds the substrate 6 that is input to the processing and delivery unit 9, the substrate 6, and a substrate end closer means 94, which will be described later, and is vertically vertical before being integrally calibrated. After the calibration is completed, it has the function of returning to a horizontal state. The means for fixing as described above is considered to be in the case of vacuum, and is constituted by electrostatic absorption or mechanical clamp or the like.
在圖10中,基板旋轉手段93係大致由旋轉為旋轉對象之基板6、基板端部緊密手段94及基板保持器等之旋轉部之真空內配線連桿機構92L、和將前述旋轉物,於箭頭A的方向,藉由前述機構,進行旋轉驅動之基板旋轉驅動部93b所成。 In FIG. 10, the substrate rotating means 93 is a vacuum inner wiring link mechanism 92L which is substantially rotated by the substrate 6 to be rotated, the substrate end tight means 94, and the rotating portion of the substrate holder, and the rotating object. The direction of the arrow A is formed by the substrate rotation driving unit 93b that is rotationally driven by the above mechanism.
真空內配線連桿機構93L係由第1連桿93L1與第2連桿93L2,及將此等從真空側隔離,將此內部維持成大氣環境之密封部93S所成。前述第1連桿93L1係將一端支持於旋轉支持台93k,將另一端,呈於後述之基板端部緊密手段94,具有中空部地加以連接。前述第2連桿93L2係對於前述基板端部緊密手段94而言,設置於與前述第1連桿93L1相反側,將一端,與第1連桿93L1同樣,呈具有中空部地加以連接於前述基板端部緊密手段94,將另一端,加以連接於設置於圖1所示之間隔部11的支持部11A。前述密封部93S係由將一端,連接於前述基板端部緊密手段之連接部,將另一端,連接於各真空蒸鍍室1bu之側壁,和支持部11A之第1密封部93S1,和第2密封部93S2所成。各密封部93S1、93S2係具有連結各兩端之伸縮管93Sv1、93Sv2,另外,各密封部93S1、93S2之基板端部緊密手段94側的連接部係可旋轉地支持第1連桿93L1與第2連桿93L2。 The vacuum inner wiring link mechanism 93L is formed by the first link 93L1 and the second link 93L2, and the sealing portion 93S which is isolated from the vacuum side and maintained in the atmosphere. The first link 93L1 has one end supported by the rotation support table 93k, and the other end is connected to the substrate end tight means 94, which will be described later, and has a hollow portion. The second link 93L2 is provided on the side opposite to the first link 93L1, and the one end is connected to the first link 93L1 in the same manner as the first link 93L1. The substrate end tight means 94 connects the other end to the support portion 11A provided in the spacer 11 shown in Fig. 1 . The sealing portion 93S has a connecting portion that connects one end to the substrate end portion close means, and the other end is connected to the side wall of each vacuum vapor deposition chamber 1bu, and the first sealing portion 93S1 of the support portion 11A, and the second portion. The sealing portion 93S2 is formed. Each of the sealing portions 93S1 and 93S2 has a telescopic tube 93Sv1 and 93Sv2 that connect the respective ends, and the connection portion on the side of the substrate end portion close means 94 of each of the sealing portions 93S1 and 93S2 rotatably supports the first link 93L1 and the first portion. 2 link 93L2.
在上述實施形態中,為了將配線94f敷設於連桿內,而將連桿內做成中空,但密封部93S係因呈包含各連桿地加以構成之故,於連桿與真空密封部之間,敷設配線亦可。此情況係未必需要將連桿做成中空。 In the above embodiment, in order to lay the wiring 94f in the connecting rod, the inside of the connecting rod is made hollow, but the sealing portion 93S is configured to include the respective links, and is connected to the connecting rod and the vacuum sealing portion. Between, it is also possible to lay wiring. In this case, it is not necessary to make the connecting rod hollow.
另一方面,基板旋轉驅動部93b係具有設置於大氣側之旋轉用馬達93sm,和由旋轉用馬達93sm,將旋轉傳達至前述第1連桿93L1之齒輪93h1、93h2,和支持第1連桿L1之一端的旋轉支持台93k。然而,旋轉用馬達93sm 係由設置於大氣側之控制裝置60加以控制。 On the other hand, the substrate rotation driving unit 93b includes a rotation motor 93sm provided on the atmosphere side, and a rotation motor 93sm that transmits rotation to the gears 93h1 and 93h2 of the first link 93L1, and supports the first link. A rotation support table 93k at one end of L1. However, the motor for rotation 93sm It is controlled by a control device 60 provided on the atmosphere side.
另外,圖10乃真空蒸鍍室1bu之R線路之故,將圖1所示之間隔部11作為面對象中心,於L線路亦配置有同一構造。隨之,R線路之第1連桿93L1、基板端部緊密手段94、第2連桿93L2及L線路之第1連桿93L1、基板端部緊密手段94、第2連桿93L2之中空部係成為藉由設置於間隔部11之支持部11A而由大氣連結之構造。第2連桿93L2係未必需要為中空,但如後述,第2連桿93L2係有必要在間隔部11之中空部,移動至圖10所示之B方向之故,有可能在移動部出現粉塵,形成支持部11A之中空部之一部分,作為連結於大氣之構造。 In addition, FIG. 10 is the R line of the vacuum vapor deposition chamber 1bu, and the spacer 11 shown in FIG. 1 is the center of the surface object, and the same structure is also disposed on the L line. Accordingly, the first link 93L1 of the R line, the substrate end closer means 94, the first link 93L1 of the second link 93L2 and the L line, the substrate end closer means 94, and the hollow portion of the second link 93L2 The structure is connected by the atmosphere by the support portion 11A provided in the partition portion 11. The second link 93L2 is not necessarily required to be hollow. However, as will be described later, the second link 93L2 needs to move to the B direction shown in FIG. 10 in the hollow portion of the partition portion 11, and dust may appear in the moving portion. A part of the hollow portion of the support portion 11A is formed as a structure connected to the atmosphere.
在上述中,因將基板6立起成垂直時,於基板6與基板保持器91之間,亦有可能產生微小的間隙之故,例如1度程度,多少傾斜安定載置之同時,經由基板的自重,可確實地消解基板的彎曲。在本實施形態中,將基板蒸鍍面做成上面而進行輸送之故,如將基板6立起,可直接進行前述之校準。 In the above, when the substrate 6 is erected vertically, a slight gap may occur between the substrate 6 and the substrate holder 91. For example, the degree of tilting is stably placed at a distance of 1 degree, and the substrate is passed through the substrate. Its own weight can reliably eliminate the bending of the substrate. In the present embodiment, the substrate vapor deposition surface is formed as an upper surface and transported. If the substrate 6 is raised, the above calibration can be directly performed.
第2,對於達成步驟(5)之校準的構成與動作,既已使用圖4說明過之故,在此省略說明。 Secondly, the configuration and operation of the calibration for achieving the step (5) have been described using FIG. 4, and the description thereof is omitted here.
接著,對於緊密(3)(6)(8)之基板6與陰蔽罩81的基板接近手段93G之構成及動作,使用圖10加以說明。基板接近手段93G係經由將基板旋轉手段93全體朝箭頭B方向前後移動之時,將基板6,首先至陰蔽罩81為止接近一定距離,之後加以緊密,蒸鍍後返回至原來的 位置之手段。因此,基板接近手段93G(基板接近驅動部93g)係具有載置基板旋轉手段93之旋轉驅動部載置台93t、和旋轉驅動部載置台93t之運行用的軌道93r、和藉由滾動螺旋93n而驅動旋轉驅動部載置台93t之接近用馬達93m。對於間隔部11之中空部,亦有隨動於旋轉驅動部載置台93t之動作,將基板旋轉手段93的第2連桿93L2移動至B方向之軌道(未圖示)。雖說是軌道,其稼働長度係頂多2mm程度。由經由控制裝置60而控制如此之機構者,可將基板6接近、緊密及脫離於陰蔽罩81者。 Next, the configuration and operation of the substrate approaching means 93G of the substrate (6) (6) and (8) and the substrate cover 86 of the shadow mask 81 will be described with reference to FIG. When the substrate approach means 93G moves back and forth in the direction of the arrow B in the entire direction of the arrow B, the substrate 6 is first brought to a certain distance from the shadow mask 81, and then compacted, vapor-deposited, and returned to the original state. The means of location. Therefore, the substrate approaching means 93G (the substrate approaching drive unit 93g) includes the rotary drive unit mounting table 93t on which the substrate rotating means 93 is placed, the track 93r for operating the rotary drive unit mounting table 93t, and the rolling spiral 93n. The proximity motor 93m of the rotary drive unit mounting table 93t is driven. In the hollow portion of the partition portion 11, the second link 93L2 of the substrate rotating means 93 is moved to the track (not shown) in the B direction in accordance with the operation of the rotation driving portion mounting table 93t. Although it is a track, its length is about 2mm. By controlling such a mechanism via the control device 60, the substrate 6 can be brought close to, tightly, and detached from the shadow mask 81.
如根據上述實施形態,在蒸鍍時可消解基板之彎曲。另外,保持基板與陰蔽罩未接觸距離,例如0.5mm前後同時,可進行校準,之後,由將基板緊密於陰蔽罩者,可降低在蒸鍍中之模糊,成為可進行高精確度之蒸鍍。 According to the above embodiment, the bending of the substrate can be eliminated at the time of vapor deposition. In addition, the substrate and the shadow mask are not in contact with each other, for example, 0.5 mm before and after, and the calibration can be performed. Thereafter, the substrate is tightly attached to the shadow mask, and the blur in the vapor deposition can be reduced, so that high precision can be achieved. Evaporation.
最後,使用圖10,說明實現更加緊密與經由(4)(9)之陰蔽罩的彎曲之基板的間隙之基板端部緊密手段94。即使經由基板接近手段93G而將基板6緊密於陰蔽罩81,如圖11所示,經由陰蔽罩81之具有的彎曲,在基板端部中,於蒸鍍範圍與陰蔽罩81,亦產生數十μm的間隙。因此,在本實施形態中,測定基板保持器91與陰蔽罩間的距離,按壓基板保持器91之上述端部蒸鍍範圍之外側周圍,補正基板6與陰蔽罩81間的間隙,將基板6沿著陰蔽罩81加以緊密。 Finally, using FIG. 10, a substrate end tight means 94 for achieving a tighter gap with the curved substrate via the shadow mask of (4) (9) will be described. Even if the substrate 6 is tightly attached to the shadow mask 81 via the substrate approaching means 93G, as shown in FIG. 11, the curvature of the shadow mask 81 is used, and in the end portion of the substrate, the vapor deposition range and the shadow mask 81 are also A gap of several tens of μm is generated. Therefore, in the present embodiment, the distance between the substrate holder 91 and the shadow mask is measured, and the periphery of the outer surface of the end portion of the substrate holder 91 is pressed, and the gap between the substrate 6 and the shadow mask 81 is corrected. The substrate 6 is tightly packed along the shadow mask 81.
於圖10顯示實現此之基板端部緊密手段94的實施形 態。基板端部緊密手段94係於罩體94H的內部,為了補正陰蔽罩之彎曲而沿著基板,於上部2處,下部2處,設置計4處之補正手段94A~94D。在計4處之補正手段94A~94D中,將上部2處上部的彎曲,將下部2處下部的彎曲,將右部2處右部的彎曲,並且將左部2處左部的彎曲,各自進行補正。 Figure 10 shows an embodiment of the substrate end compacting means 94 for achieving this. state. The substrate end tightness means 94 is attached to the inside of the cover 94H, and correction means 94A to 94D at the upper portion 2 and the lower portion 2 are provided along the substrate in order to correct the bending of the female cover. In the correction means 94A to 94D of the fourth place, the upper portion is bent at the upper portion, the lower portion of the lower portion 2 is bent, the right portion 2 is bent at the right portion, and the left portion 2 is bent at the left portion. Make corrections.
圖11乃顯示補正手段94A~94D之一實施形態的構成圖,作為代表而顯示94A。各手段構成均為相同之故,各構成要素的附加字(A~D)係省略。補正手段94A係由測定前述距離之測定感應部94K,和按壓基板保持器91之按壓機構部94P,和以及密封真空之密封部94S所成。密封部94S係由罩體94H,和設置於基板保持器91之密封94s1、94s2,和連結此等之密封用伸縮管94sv所成。感應部94K係由測定至陰蔽罩81為止之距離的雷射距離計94kr,和為了確保光路而設置於基板保持器91之光路坑94kh及光學視窗94kw所成。另一方面,按壓機構部(按壓手段)94P係由基板保持器之按壓部94pp、於其按壓部,其前端可回動地安裝之按壓棒94pb、將其按壓棒移動至前後之滾動螺旋94pn、螺帽94pt、驅動螺帽導件94pg及滾動螺旋之伺服馬達94pm所成。 Fig. 11 is a view showing a configuration of an embodiment of the correction means 94A to 94D, and shows 94A as a representative. The configuration of each means is the same, and the additional words (A to D) of the respective constituent elements are omitted. The correction means 94A is formed by the measurement sensing unit 94K that measures the distance, the pressing mechanism portion 94P that presses the substrate holder 91, and the sealing portion 94S that seals the vacuum. The sealing portion 94S is formed by a cover 94H, seals 94s1 and 94s2 provided in the substrate holder 91, and a sealing telescopic tube 94sv connected thereto. The sensing unit 94K is formed by a laser distance meter 94kr that measures the distance from the shadow mask 81 and an optical path pit 94kh and an optical window 94kw that are provided in the substrate holder 91 in order to secure the optical path. On the other hand, the pressing mechanism portion (pressing means) 94P is a pressing portion 94pp of the substrate holder, and a pressing rod 94pb that is rotatably attached to the front end of the pressing portion, and a pressing screw 94p that moves the pressing rod to the front and rear. , the nut 94pt, the drive nut guide 94pg and the rolling screw servo motor 94pm.
控制裝置60係依據來自雷射距離計94kr的檢測結果,按壓基板保持器91,將基板6沿著陰蔽罩81。作為目標間隙係例如作為10μm以下。未成為目標間隙以下時,取4個間隙的平均而進行補正。 The control device 60 presses the substrate holder 91 in accordance with the detection result from the laser distance meter 94kr, and the substrate 6 is placed along the shadow mask 81. The target gap is, for example, 10 μm or less. When it is not below the target gap, the average of the four gaps is taken and corrected.
如根據上述實施形態之基板端部緊密手段,可高精確地將基板沿著陰蔽罩所具有的彎曲,其結果,在基板端部中,未有膜模糊而可高精確地進行蒸鍍。 According to the substrate end portion fastening means of the above embodiment, the substrate can be bent with high precision along the shadow mask, and as a result, vapor deposition can be performed with high precision without blurring the film at the end portion of the substrate.
在上述實施形態中,在4處補正陰蔽罩之彎曲,但例如上部的彎曲乃比較於目標間隙而為小時,於上部中央,設置一處即可。 In the above-described embodiment, the curvature of the shadow mask is corrected at four places. For example, the curvature of the upper portion is smaller than the target gap, and one portion may be provided at the center of the upper portion.
另外,在上述實施形態中,將基板端部緊密手段94與基板保持器91作為一體化,但例如基板端部緊密手段之感應部,如個別計測基板保持器與陰蔽罩之距離時,經由此等的差,可測定基板與陰蔽罩間之距離之故,未必需要作為一體化。此情況,例如對於立起成略垂之基板保持器91,將基板端部緊密手段94,於基板的上部具有旋轉軸,從上部進行旋轉,沿著基板保持器91進行端部緊密補正亦可。 Further, in the above-described embodiment, the substrate end portion fastening means 94 and the substrate holder 91 are integrated. However, for example, when the sensing portion of the substrate end portion close means is measured by the distance between the substrate holder and the shadow mask, Such a difference can measure the distance between the substrate and the shadow mask, and does not necessarily need to be integrated. In this case, for example, the substrate holder 91 that is erected slightly, the substrate end portion fastening means 94 has a rotation axis on the upper portion of the substrate, and is rotated from the upper portion, and the end portion can be closely corrected along the substrate holder 91. .
更且,在上述實施形態中,將補正量由感應器測定基板保持器與陰蔽罩之距離,但對於許多之陰蔽罩而言預先測定前述距離,依據其統計的處理之距離,作為補正量亦可。 Further, in the above-described embodiment, the distance between the substrate holder and the shadow mask is measured by the sensor from the amount of correction. However, the distance is measured in advance for many of the shadow masks, and the correction is based on the statistical processing distance. The amount is also OK.
在以上的實施形態,亦可得到與詳細說明之實施形態同樣的效果。 In the above embodiment, the same effects as those of the embodiment described in detail can be obtained.
另外,在圖10所示之實施形態中,罩體94H內部係如在基板旋轉手段93時所說明地,藉由第1連桿93L1而加以開放於大氣側。其結果,伴隨著按壓,馬達等之粉塵係排出大氣,未對於真空蒸鍍帶來不良影響。另外,因實 現將對於馬達之驅動線及來自感應部之信號線94f,藉由罩體94H與第1連桿93L1而連接於控制裝置之真空內配線機構之故,未有經由來自配線之被覆材的排氣而產生真空度下降之問題。更且,將前述罩體94H或前述連桿,由耐銹強,具有相當強度之金屬,例如不鏽鋼,鋁而構成之故,亦未有排氣之產生。 Further, in the embodiment shown in FIG. 10, the inside of the cover 94H is opened to the atmosphere side by the first link 93L1 as explained in the case of the substrate rotating means 93. As a result, dust such as a motor is discharged to the atmosphere with the pressing, and this does not adversely affect the vacuum deposition. In addition, due to Now, the driving line of the motor and the signal line 94f from the sensing unit are connected to the vacuum internal wiring mechanism of the control device by the cover 94H and the first link 93L1, and there is no row passing through the wiring material from the wiring. Gas causes a problem of a decrease in vacuum. Further, the cover 94H or the link is made of a metal having a strong rust resistance and having a relatively high strength, such as stainless steel or aluminum, and no exhaust gas is generated.
隨之,如根據本實施形態,可保持高真空,可進行信賴性高的蒸鍍處理。 As a result, according to the present embodiment, a high vacuum can be maintained, and a highly reliable vapor deposition process can be performed.
以上說明之實施形態的基板端部緊密手段,係將基板沿著陰蔽罩,但相反地亦可將陰蔽罩沿著基板。 The substrate end portion fastening means according to the embodiment described above is such that the substrate is placed along the shadow mask, but conversely the shadow mask may be along the substrate.
圖12係顯示在基板端部緊密手段之第2實施形態的校準部8的圖,圖13係顯示按壓陰蔽罩81的四角之補正手段的圖。在圖12、圖13中,達成與第1實施形態相同機能的構成,係附上相同的符號。 Fig. 12 is a view showing the aligning portion 8 of the second embodiment of the substrate end closer means, and Fig. 13 is a view showing the means for correcting the four corners of the squeegee cover 81. In Figs. 12 and 13, the same functions as those of the first embodiment are obtained, and the same reference numerals are attached.
在圖12中,L字狀的補正手段罩體94H係具有設置於陰蔽罩之4角(94A、94D係未圖示)將一端,在按壓陰蔽罩處,具有密封真空之圖13所示之密封部94S,將另一端連接於大氣側之構造。 In Fig. 12, the L-shaped correction means cover 94H has one end provided at four corners (94A, 94D, not shown) of the shadow mask, and has a sealed vacuum at the position where the vacuum cover is pressed. The sealing portion 94S is shown, and the other end is connected to the atmosphere side.
4個補正手段係基本上,具有相同構造之故,將上側的補正手段為例進行說明。在圖13中,與圖11相異處,係於陰蔽罩設置光路坑94kh與光學視窗94kw的點,雷射距離計94kr係測定至基板保持器91為止之距離的點,和密封部94S係設置於補正手段罩體94H與陰蔽罩之間的點。對於其他的點,基本上係與圖11相同。 The four correction means basically have the same structure, and the correction means on the upper side will be described as an example. In Fig. 13, the difference from Fig. 11 is the point at which the shadow mask is provided with the optical path pit 94kh and the optical window 94kw, the laser distance meter 94kr is the point at which the distance to the substrate holder 91 is measured, and the sealing portion 94S. It is provided at a point between the correction means cover 94H and the shadow cover. For other points, basically the same as FIG.
在本第2實施形態中,亦與第1實施形態相同,可保持高真空,可進行信賴性高的蒸鍍的處理。 In the second embodiment, as in the first embodiment, a high vacuum can be maintained, and a highly reliable vapor deposition process can be performed.
另外,在上述說明中,以例說明過有機電激發光裝置,但亦可適用於與有機電激發光裝置相同背景之進行蒸鍍處理的成膜裝置及成膜方法。 Further, in the above description, the organic electroluminescence device has been described by way of example, but it is also applicable to a film formation device and a film formation method which perform vapor deposition treatment in the same background as the organic electroluminescence device.
另外,在上述說明中,以例說明過有機電激發光裝置,但亦可適用於與有機電激發光裝置相同背景之進行蒸鍍處理的成膜裝置及成膜方法。 Further, in the above description, the organic electroluminescence device has been described by way of example, but it is also applicable to a film formation device and a film formation method which perform vapor deposition treatment in the same background as the organic electroluminescence device.
更且,上述校準機構係亦可適用於在大氣中所進行之液晶顯示裝置等之校準。 Furthermore, the above calibration mechanism can also be applied to calibration of a liquid crystal display device or the like performed in the atmosphere.
1‧‧‧處理室 1‧‧‧Processing room
1bu‧‧‧真空蒸鍍室 1bu‧‧‧vacuum evaporation chamber
2‧‧‧輸送室 2‧‧‧Transport room
3‧‧‧負載群組 3‧‧‧Load group
6‧‧‧基板 6‧‧‧Substrate
6m‧‧‧基板的校準標記 6m‧‧‧ substrate calibration mark
7‧‧‧蒸鍍部 7‧‧‧Decanting Department
8‧‧‧校準部 8‧‧‧ Calibration Department
9‧‧‧處理遞送部 9‧‧‧Processing and Delivery Department
60‧‧‧控制裝置 60‧‧‧Control device
71‧‧‧蒸發源 71‧‧‧ evaporation source
81‧‧‧陰蔽罩 81‧‧‧ Shadow cover
81a~d‧‧‧旋轉支持部 81a~d‧‧‧Rotation Support
81m‧‧‧陰蔽罩之校準標記 Calibration mark for 81m‧‧‧ shadow mask
81k‧‧‧設置於陰蔽罩框體之貫通孔 81k‧‧‧through hole in the cover of the shadow mask
82‧‧‧校準基底 82‧‧‧ Calibration substrate
83‧‧‧校準驅動部 83‧‧‧Calibration drive department
83Z‧‧‧Z軸驅動部 83Z‧‧‧Z-axis drive unit
83X‧‧‧X軸驅動部 83X‧‧‧X-axis drive unit
84‧‧‧校準傳動部 84‧‧‧ Calibration drive
85‧‧‧校準光學系統 85‧‧‧ Calibration optical system
85as‧‧‧遮蔽型支架 85as‧‧‧Shaping bracket
85c‧‧‧攝影機 85c‧‧‧ camera
85cm‧‧‧攝影機側反射鏡 85cm‧‧‧ camera side mirror
85k‧‧‧光源 85k‧‧‧Light source
85km‧‧‧光源側反射鏡 85km‧‧‧Light source side mirror
85r‧‧‧粗校準光學系統 85r‧‧‧ coarse calibration optical system
91‧‧‧基板保持器 91‧‧‧Substrate holder
93‧‧‧基板旋轉手段 93‧‧‧Substrate rotation means
93b‧‧‧基板旋轉驅動部 93b‧‧‧Substrate rotary drive unit
93A‧‧‧基板旋轉接近手段 93A‧‧‧Substrate rotation approach
93G‧‧‧基板接近手段(93g:基板接近驅動部) 93G‧‧‧Substrate approach (93g: substrate close to the drive)
94‧‧‧基板端部緊密手段 94‧‧‧ Closer means of the end of the substrate
94A~94D‧‧‧補正手段 94A~94D‧‧‧Remedy means
94H‧‧‧補正手段罩體 94H‧‧‧Revision means cover
94K‧‧‧測定感應部 94K‧‧‧Measurement Department
94P‧‧‧按壓機構部 94P‧‧‧ Pressing Mechanism Department
94S‧‧‧補正手段密封部 94S‧‧‧Revision means seal
100‧‧‧有機電激發光裝置之製造裝置 100‧‧‧Manufacturing device for organic electroluminescent device
A~D‧‧‧群組 A~D‧‧‧ group
圖1乃顯示本發明之實施形態之有機電激發光製造裝置的圖。 Fig. 1 is a view showing an apparatus for producing an organic electroluminescence light according to an embodiment of the present invention.
圖2乃顯示本發明之實施形態之輸送室2與處理室1之構成的概要圖。 Fig. 2 is a schematic view showing the configuration of the transfer chamber 2 and the processing chamber 1 according to the embodiment of the present invention.
圖3乃顯示本發明之實施形態之輸送室與處理室之構成的模式圖與動作說明圖。 Fig. 3 is a schematic view and an operation explanatory view showing a configuration of a transfer chamber and a processing chamber according to an embodiment of the present invention.
圖4乃顯示本發明之實施形態的校準部之構成圖。 Fig. 4 is a view showing the configuration of a aligning unit according to an embodiment of the present invention.
圖5乃顯示本發明之實施形態的陰蔽罩的圖。 Fig. 5 is a view showing a shadow mask according to an embodiment of the present invention.
圖6乃顯示本發明之實施形態的校準光學系統之基本構成圖。 Fig. 6 is a view showing the basic configuration of a calibration optical system according to an embodiment of the present invention.
圖7乃顯示本發明之其他實施形態的校準光學系統之基本構成圖。 Fig. 7 is a view showing the basic configuration of a calibration optical system according to another embodiment of the present invention.
圖8乃顯示本發明之實施形態的基板旋轉接近手段之構成圖。 Fig. 8 is a view showing the configuration of a substrate rotation approach means according to an embodiment of the present invention.
圖9乃顯示加上補正本發明之實施形態的陰蔽罩之彎曲的補正手段之處理的動作流程圖。 Fig. 9 is a flow chart showing the operation of a process for correcting the bending of the shadow mask of the embodiment of the present invention.
圖10乃顯示本發明之實施形態的基板旋轉手段、基板緊密手段及基板端部緊密手段的圖。 Fig. 10 is a view showing a substrate rotating means, a substrate tight means, and a substrate end tight means according to an embodiment of the present invention.
圖11乃顯示本發明之實施形態的補正手段之第1實施形態圖。 Fig. 11 is a view showing a first embodiment of a correction means according to an embodiment of the present invention.
圖12乃顯示具有本發明之實施形態的補正手段之第2實施形態的校準部的圖。 Fig. 12 is a view showing a calibration unit according to a second embodiment of the correction means according to the embodiment of the present invention.
圖13乃顯示本發明之實施形態的補正手段之第2實施形態圖。 Fig. 13 is a view showing a second embodiment of the correcting means according to the embodiment of the present invention.
圖14乃說明以往技術(水平校準)之課題的圖。 Fig. 14 is a view for explaining the problem of the prior art (horizontal calibration).
圖15乃說明以往技術(經由反射型光學系統之校準)之課題的圖。 Fig. 15 is a view for explaining the problem of the prior art (calibration via a reflective optical system).
1T‧‧‧上部壁 1T‧‧‧ upper wall
1Y‧‧‧下部壁 1Y‧‧‧ lower wall
60‧‧‧控制裝置 60‧‧‧Control device
81‧‧‧陰蔽罩 81‧‧‧ Shadow cover
81a~d‧‧‧旋轉支持部 81a~d‧‧‧Rotation Support
82‧‧‧校準基底 82‧‧‧ Calibration substrate
83‧‧‧校準驅動部 83‧‧‧Calibration drive department
83L‧‧‧左驅動部 83L‧‧‧Left Drive
83R‧‧‧右驅動部 83R‧‧‧Right Drive
83X‧‧‧X軸驅動部 83X‧‧‧X-axis drive unit
83Z‧‧‧Z軸驅動部 83Z‧‧‧Z-axis drive unit
83a、84a‧‧‧校準軸 83a, 84a‧‧‧ calibration axis
83j‧‧‧連結棒 83j‧‧‧Links
83n‧‧‧滾動螺旋 83n‧‧‧ rolling spiral
83v‧‧‧伸縮管 83v‧‧‧ telescopic tube
83s、84s‧‧‧栓槽 83s, 84s‧‧‧
83k‧‧‧Z驅動部固定板 83k‧‧‧Z drive fixing plate
83r‧‧‧軌道 83r‧‧ track
83t‧‧‧推拔 83t‧‧‧ push
83zm‧‧‧Z方向驅動馬達 83zm‧‧‧Z direction drive motor
83xm‧‧‧X方向驅動馬達 83xm‧‧‧X direction drive motor
84‧‧‧校準傳動部 84‧‧‧ Calibration drive
84b‧‧‧支持部固定台 84b‧‧‧Support Department Station
84c‧‧‧密封部 84c‧‧‧ Sealing Department
84k‧‧‧X軸傳動板 84k‧‧‧X-axis drive plate
84r‧‧‧軌道 84r‧‧‧ Track
85d‧‧‧攝影機位置調整平台 85d‧‧‧Camera Position Adjustment Platform
85r‧‧‧粗校準光學系統 85r‧‧‧ coarse calibration optical system
85s‧‧‧精密校準光學系統 85s‧‧‧Precision calibration optical system
85p‧‧‧固定板 85p‧‧‧ fixed plate
Claims (12)
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JP2008317969A JP5167103B2 (en) | 2008-12-15 | 2008-12-15 | Deposition equipment |
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JP2009007220A JP5074429B2 (en) | 2009-01-16 | 2009-01-16 | Deposition equipment |
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