JP6999769B2 - Film forming equipment, control method, and manufacturing method of electronic devices - Google Patents

Film forming equipment, control method, and manufacturing method of electronic devices Download PDF

Info

Publication number
JP6999769B2
JP6999769B2 JP2020163136A JP2020163136A JP6999769B2 JP 6999769 B2 JP6999769 B2 JP 6999769B2 JP 2020163136 A JP2020163136 A JP 2020163136A JP 2020163136 A JP2020163136 A JP 2020163136A JP 6999769 B2 JP6999769 B2 JP 6999769B2
Authority
JP
Japan
Prior art keywords
substrate
mask
pressing force
film forming
holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020163136A
Other languages
Japanese (ja)
Other versions
JP2021008668A (en
Inventor
博 石井
智之 佐藤
健太郎 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Tokki Corp
Original Assignee
Canon Tokki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Tokki Corp filed Critical Canon Tokki Corp
Publication of JP2021008668A publication Critical patent/JP2021008668A/en
Application granted granted Critical
Publication of JP6999769B2 publication Critical patent/JP6999769B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185Joining of semiconductor bodies for junction formation
    • H01L21/187Joining of semiconductor bodies for junction formation by direct bonding
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682Mask-wafer alignment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)

Description

本発明は、成膜装置、制御方法、及び電子デバイスの製造方法に関するものである。 The present invention relates to a film forming apparatus, a control method, and a method for manufacturing an electronic device.

近年、基板の大型化・薄型化が進んでおり、基板の自重による撓みの影響が大きくなっている。また、成膜領域を基板中央部に設ける関係上、基板を挟持できるのは基板の外周部に限られている。 In recent years, the size and thickness of the substrate have been increasing, and the influence of the bending due to the weight of the substrate is increasing. Further, since the film formation region is provided in the central portion of the substrate, the substrate can be sandwiched only in the outer peripheral portion of the substrate.

そのため、基板の外周部を基板保持体に支持させ、基板の外周部(例えば一対の対向辺部)を基板保持体に挟持した状態で基板をマスクに載置すると、外周部を挟持された基板は、基板の自重で撓んだ中央部とマスクとが接触した際に自由な動きが妨げられ、基板に歪みが生じる。 Therefore, when the outer peripheral portion of the substrate is supported by the substrate holder and the substrate is placed on the mask with the outer peripheral portion (for example, a pair of opposite sides) of the substrate sandwiched between the substrate holders, the outer peripheral portion is sandwiched between the substrates. When the mask comes into contact with the central portion bent by the weight of the substrate, the free movement is hindered and the substrate is distorted.

この歪みにより、マスクと基板との間に隙間が生じ、マスクと基板との密着性が低下することで、膜ボケ等の原因となる。 Due to this distortion, a gap is created between the mask and the substrate, and the adhesion between the mask and the substrate is lowered, which causes film blurring and the like.

そこで、例えば、基板等が大型化しても基板とマスクとを良好に密着させるため、特許文献1に開示されるような技術が提案されているが、更なる改善が要望されている。 Therefore, for example, in order to make the substrate and the mask adhere well even if the size of the substrate or the like is increased, a technique as disclosed in Patent Document 1 has been proposed, but further improvement is desired.

特開2009-277655号公報Japanese Unexamined Patent Publication No. 2009-277655

そこで、基板をマスク上に載置する際、基板がマスクに対して自由に動けるように解放状態で載置することが考えられるが、この場合、基板毎の撓みの影響などにより、最初にマスクに接触する位置にばらつきが生じる。 Therefore, when mounting the substrate on the mask, it is conceivable to mount the substrate in an open state so that the substrate can move freely with respect to the mask. In this case, the mask is first placed due to the influence of bending of each substrate. There is a variation in the position of contact with.

例えば、図1に示したように、基板Aの撓みが略中心位置の場合(A)と、中心より右側にずれている場合(B)とでは、基板AをマスクB上に載置した際、基板Aの位置が(A)に比べて(B)では左側寄りにずれてしまう。図1中、符号Cは基板保持体である。 For example, as shown in FIG. 1, when the deflection of the substrate A is substantially at the center position (A) and when it is deviated to the right from the center (B), when the substrate A is placed on the mask B. , The position of the substrate A shifts to the left side in (B) as compared with (A). In FIG. 1, reference numeral C is a substrate holder.

即ち、基板が最初にマスクに接触する位置によって、マスク上に基板を載置する際に基板の位置がずれるため、基板のマスク上でのずれ方に再現性がなく、マスク上の意図した位置に基板を載置することは困難である。 That is, the position of the substrate shifts when the substrate is placed on the mask depending on the position where the substrate first contacts the mask, so that the displacement of the substrate on the mask is not reproducible and the intended position on the mask. It is difficult to place the substrate on the surface.

本発明は、上述のような現状に鑑みなされたもので、基板とマスクとを良好に密着させることができるのは勿論、基板を安定して移動でき、且つ、マスク上に載置する際の基板の位置ずれを防止できる成膜装置、制御方法、及び電子デバイスの製造方法を提供するものである。 The present invention has been made in view of the above-mentioned current situation, and it is possible to make the substrate and the mask adhere to each other in good contact with each other, and the substrate can be stably moved and placed on the mask. It provides a film forming apparatus capable of preventing a displacement of a substrate, a control method, and a method for manufacturing an electronic device.

上記課題を解決するために以下の手段を採用した。 The following means were adopted to solve the above problems.

すなわち、本発明は、基板を下方から支持する基板支持具と、基板を前記基板支持具に押圧する押圧具とによって基板の外周部を挟持する基板保持体と
マスクを保持するマスク保持体と、
前記基板支持具を前記マスク保持体に対して昇降させる昇降手段と、
基板を前記押圧具により第1の押圧力で前記基板支持具に押圧した状態で該基板とマスクとのアライメントを行うアライメント機構と、を備える成膜装置において、
前記基板を前記押圧具により前記第1の押圧力よりも弱く、かつ、基板の挟持位置が移動可能な程度の第2の押圧力で前記基板支持具に押圧した状態で、前記昇降手段によって前記基板支持具に支持された該基板を前記マスク保持体に保持されたマスクに接触させてマスクの上に載置することを特徴とする。
That is, the present invention comprises a substrate support that supports the substrate from below, and a substrate holder that sandwiches the outer peripheral portion of the substrate by a pressing tool that presses the substrate against the substrate support.
A mask holder that holds the mask, and a mask holder
Elevating means for raising and lowering the substrate support with respect to the mask holder, and
In a film forming apparatus provided with an alignment mechanism for aligning a substrate with a mask while the substrate is pressed against the substrate support by the pressing tool with the first pressing force.
The substrate is pressed against the substrate support by the pressing tool with a second pressing force that is weaker than the first pressing force and the holding position of the substrate can be moved by the elevating means. The substrate supported by the substrate support is brought into contact with the mask held by the mask holder and placed on the mask .

以上説明したように、本発明によれば、基板とマスクとを良好に密着させることができるのは勿論、基板を安定して移動でき、且つ、マスク上に載置する際の基板の位置ずれを防止できる。 As described above, according to the present invention, not only the substrate and the mask can be brought into close contact with each other, but also the substrate can be stably moved, and the position of the substrate is displaced when the substrate is placed on the mask. Can be prevented.

従来例の概略説明図である。It is a schematic explanatory drawing of the conventional example. 本実施例1の概略説明断面図である。It is schematic explanatory sectional drawing of this Example 1. FIG. 本実施例1の工程概略説明図である。It is a process schematic explanatory drawing of this Example 1. FIG. 本実施例1の工程概略説明図である。It is a process schematic explanatory drawing of this Example 1. FIG. 本実施例1の工程概略説明図である。It is a process schematic explanatory drawing of this Example 1. FIG. 本実施例1の工程概略説明図である。It is a process schematic explanatory drawing of this Example 1. FIG. 本実施例1の要部の概略説明斜視図である。It is a schematic explanatory perspective view of the main part of this Example 1. 本実施例2の電子デバイスの製造装置の構成の一部を模式的に示す上視図である。It is an upper view which shows a part of the structure of the manufacturing apparatus of the electronic device of this Example 2 schematically. 本実施例2の成膜装置の構成を模式的に示す断面図である。It is sectional drawing which shows typically the structure of the film forming apparatus of this Example 2. 本実施例2の基板保持ユニットの斜視図である。It is a perspective view of the substrate holding unit of this Example 2. 本実施例2の有機EL装置の概略図である。It is a schematic diagram of the organic EL apparatus of this Example 2.

以下に図面を参照して、この発明を実施するための形態を、実施例に基づいて例示的に詳しく説明する。ただし、この実施例に記載されている構成部品の寸法、材質、形状、その相対配置などは、特に特定的な記載がない限りは、この発明の範囲をそれらのみに限定する趣旨のものではない。 Hereinafter, embodiments for carrying out the present invention will be described in detail exemplary with reference to the drawings. However, the dimensions, materials, shapes, relative arrangements, etc. of the components described in this embodiment are not intended to limit the scope of the present invention to those alone unless otherwise specified. ..

(実施形態)
本実施形態においては、押圧具8が基板1に当接し且つ基板保持体3に対して位置ずれが可能な程度の押圧力で基板1の外周部を仮挟持した状態で基板1を下降させてマスク2に接触させ、更に下降させてマスク2上に基板1を載置する。その後、押圧具8の押圧力を基板保持体3に対して位置ずれが生じない程度のより強い押圧力として基板1を本挟持する。
(Embodiment)
In the present embodiment, the pressing tool 8 is in contact with the substrate 1 and the substrate 1 is lowered while the outer peripheral portion of the substrate 1 is temporarily sandwiched by a pressing force capable of shifting the position with respect to the substrate holding body 3. The substrate 1 is placed on the mask 2 by bringing it into contact with the mask 2 and further lowering it. After that, the substrate 1 is sandwiched by the pressing force of the pressing tool 8 as a stronger pressing force so as not to cause a positional deviation with respect to the substrate holding body 3.

この際、少なくとも接触開始時には、マスク2との接触に伴う基板1の基板保持体3に対する位置ずれは許容されるから、基板1が自重で撓んでいるために基板1中央部がマスク2と先行接触することにより生じる変形が阻害されず基板1の外方への伸展は許容されることになる。更に、基板1は基板保持体3に対して完全に自由な状態ではなく、押圧具と基板保持体3とに挟まれて仮固定されるから、基板1をマスク2に載置した際に基板1の全体がマスク2に対して大きく位置ずれてしまうことは防止される。 At this time, at least at the start of contact, the displacement of the substrate 1 with respect to the substrate holder 3 due to the contact with the mask 2 is allowed. Therefore, since the substrate 1 is bent by its own weight, the central portion of the substrate 1 precedes the mask 2. Deformation caused by contact is not hindered, and outward extension of the substrate 1 is allowed. Further, since the substrate 1 is not completely free with respect to the substrate holder 3 and is temporarily fixed by being sandwiched between the pressing tool and the substrate holder 3, the substrate 1 is placed on the mask 2 when the substrate 1 is placed on the mask 2. It is possible to prevent the entire 1 from being largely displaced with respect to the mask 2.

従って、位置ずれを生じさせることなくマスク2上に基板1を載置することができ、良好にアライメントを行うことができる。また、基板1を歪みなくマスク2と密着させた状態で本挟持することができる。よって、基板載置工程後のアライメント工程及び蒸着工程を良好に行うことが可能となる。 Therefore, the substrate 1 can be placed on the mask 2 without causing misalignment, and good alignment can be performed. Further, the substrate 1 can be held in close contact with the mask 2 without distortion. Therefore, it is possible to satisfactorily perform the alignment step and the vapor deposition step after the substrate mounting step.

また、基板保持体3に対して押圧具8により基板1の外周部を押圧することで、基板1の周辺が押され、下側に撓んでいる基板1の中央部分が、てこの原理により押し上げられる。これにより、基板1の撓み量が減少し、基板1の中央部分がマスク2に接触した後、基板1がマスク2に載置されるまでの下降距離が減るため、基板1をマスク2に載置した際の基板1のずれ量が小さくなる。 Further, by pressing the outer peripheral portion of the substrate 1 against the substrate holder 3 with the pressing tool 8, the periphery of the substrate 1 is pushed, and the central portion of the substrate 1 bent downward is pushed up by the principle of the lever. Be done. As a result, the amount of bending of the substrate 1 is reduced, and the descending distance until the substrate 1 is placed on the mask 2 after the central portion of the substrate 1 comes into contact with the mask 2 is reduced, so that the substrate 1 is mounted on the mask 2. The amount of displacement of the substrate 1 when placed is small.

以下、本発明の実施例について図面に基づいて説明する。 Hereinafter, examples of the present invention will be described with reference to the drawings.

(実施例1)
本実施例は、図2に図示したように、真空チャンバ10内に、基板1とマスク2とを配置して蒸発源13等から成る成膜機構を用いて成膜を行う成膜装置に本発明を適用した例である。この成膜装置には、蒸発源13から射出された蒸発粒子の蒸発レートをモニタする膜厚モニタ、真空チャンバ10外に設けたモニタした蒸発粒子の量を膜厚に換算する膜厚計、換算された膜厚が所望の膜厚になるように成膜材料の蒸発レートを制御するために蒸発源13を加熱するヒータ用電源等が設けられる。この成膜装置は、例えば、有機エレクトロルミネッセンス表示装置のための表示パネルの製造に用いられる。
(Example 1)
As shown in FIG. 2, this embodiment is for a film forming apparatus in which a substrate 1 and a mask 2 are arranged in a vacuum chamber 10 and a film forming mechanism including an evaporation source 13 or the like is used to form a film. This is an example to which the invention is applied. This film forming apparatus includes a film thickness monitor that monitors the evaporation rate of the evaporated particles ejected from the evaporation source 13, a film thickness meter that converts the amount of the monitored evaporated particles provided outside the vacuum chamber 10 into a film thickness, and a conversion. A heater power supply or the like for heating the evaporation source 13 is provided in order to control the evaporation rate of the film-forming material so that the film thickness is a desired film thickness. This film forming apparatus is used, for example, in manufacturing a display panel for an organic electroluminescence display apparatus.

具体的には、真空チャンバ10内には、基板1を保持する基板保持体3と、載置体としてのマスク2を保持するマスク保持体4と、基板保持体3を移動させて基板1をマスク保持体4に保持されたマスク2上に載置するための載置手段としての基板移動機構6とが設けられている。 Specifically, the substrate holder 3 for holding the substrate 1, the mask holder 4 for holding the mask 2 as a mounting body, and the substrate holder 3 are moved into the vacuum chamber 10 to move the substrate 1. A substrate moving mechanism 6 is provided as a mounting means for mounting on the mask 2 held by the mask holder 4.

また、基板保持体3には、保持された基板1を基板保持体3に押し当てる押圧具8と、この押圧具8による押圧力を変更する挟力制御機構としての押圧力制御機構5とが設けられている。 Further, the substrate holder 3 includes a pressing tool 8 that presses the held substrate 1 against the substrate holding body 3, and a pressing force control mechanism 5 as a pinching force control mechanism that changes the pressing force by the pressing member 8. It is provided.

基板移動機構6は、真空チャンバ10の壁面に取り付けられる固定部と、真空チャンバ10の壁面に対して接離移動するように固定部に進退自在に設けられた移動部とから成る進退移動機構と、前後左右移動機構(図示省略)とで構成されている。基板保持体3は、前記進退移動機構の移動部の先端部に設けられている。 The substrate moving mechanism 6 is an advancing / retreating moving mechanism including a fixed portion attached to the wall surface of the vacuum chamber 10 and a moving portion provided on the fixed portion so as to move in contact with and away from the wall surface of the vacuum chamber 10. , Front / rear / left / right movement mechanism (not shown). The substrate holder 3 is provided at the tip of the moving portion of the advancing / retreating moving mechanism.

従って、基板移動機構6により基板保持体3に保持された基板1はマスク2に対して接離移動及び前後左右移動する。 Therefore, the substrate 1 held by the substrate holder 3 by the substrate moving mechanism 6 moves in contact with the mask 2 and moves back and forth and left and right.

基板保持体3には、基板1の下面外周部と接触する支持具7、及び、基板1の上面側に設けられる押圧具8が設けられている。これら支持具7と押圧具8とにより、基板1が挟持される。なお、支持具7と押圧具8と押圧力制御機構5とにより、基板1の周縁を挟持するための挟持手段を構成する。 The substrate holder 3 is provided with a support 7 that comes into contact with the outer peripheral portion of the lower surface of the substrate 1 and a pressing tool 8 provided on the upper surface side of the substrate 1. The substrate 1 is sandwiched between the support 7 and the press 8. The support 7, the pressing tool 8, and the pressing pressure control mechanism 5 constitute a holding means for holding the peripheral edge of the substrate 1.

具体的には、基板保持体3は、胴部の左右に袖部が垂設されており、袖部の先端から内方に突出するように支持具7が設けられている。また、この支持具7に夫々対向するように押圧具8が挿通する挿通孔が設けられたガイド部9が設けられている。なお、基板保持体3の胴部にしてガイド部9の挿通孔と対向する位置にも押圧具8が挿通する挿通孔が設けられている。また、図2中、符号11はベローズである。 Specifically, in the substrate holder 3, sleeves are vertically provided on the left and right sides of the body, and a support 7 is provided so as to project inward from the tip of the sleeve. Further, a guide portion 9 provided with an insertion hole through which the pressing tool 8 is inserted so as to face the support tool 7 is provided. It should be noted that an insertion hole through which the pressing tool 8 is inserted is also provided at a position facing the insertion hole of the guide portion 9 in the body portion of the substrate holder 3. Further, in FIG. 2, reference numeral 11 is a bellows.

押圧具8は、基板1に当接する先端部と押圧力制御機構5に連結される基端部とから成り、基部9から突出して先端部で基板1を支持具7に押し付けることで基板1を挟持するように構成されている。この支持具7及び押圧具8(挟持機構)により、押圧具8を基板1に押し付けた挟持状態と、基板1から押圧具8を退避させて基板1を解放した状態とに
適宜切り替えることが可能となる。
The pressing tool 8 is composed of a tip portion that abuts on the substrate 1 and a base end portion that is connected to the pressing force control mechanism 5. The substrate 1 is pressed against the support tool 7 by protruding from the base portion 9 and pressing the substrate 1 against the support tool 7 at the tip portion. It is configured to be pinched. With the support 7 and the pressing tool 8 (pinching mechanism), it is possible to appropriately switch between a holding state in which the pressing tool 8 is pressed against the substrate 1 and a state in which the pressing tool 8 is retracted from the substrate 1 and the substrate 1 is released. Will be.

また、押圧力制御機構5は、真空チャンバ10の壁面の外側に設けられた固定部と、この固定部に進退自在に設けられた移動部とで構成されている。この進退移動により真空チャンバ10の壁面に対して接離移動する移動部の先端に、押圧具8の基端部が連結されており、押圧具制御機構5の移動部の進退度合いにより押圧具8の先端部による基板1の押圧力を調整することができる。押圧具8の先端部は、基板1の外方への伸展を許容し易いよう、金属材料にフッ素コーティングを施した構成としている。なお、押圧具8の先端部は基板1を傷つけないようにゴム製等、適宜な弾性部材で構成しても良い。 Further, the pressing force control mechanism 5 is composed of a fixed portion provided on the outside of the wall surface of the vacuum chamber 10 and a moving portion provided on the fixed portion so as to be able to move forward and backward. The base end portion of the pressing tool 8 is connected to the tip of the moving portion that moves in contact with and away from the wall surface of the vacuum chamber 10 due to this advancing / retreating movement, and the pressing tool 8 depends on the degree of advancing / retreating of the moving portion of the pressing tool control mechanism 5. The pressing force of the substrate 1 by the tip of the substrate 1 can be adjusted. The tip of the pressing tool 8 has a structure in which a metal material is coated with fluorine so that the substrate 1 can be easily extended to the outside. The tip of the pressing tool 8 may be made of an appropriate elastic member such as rubber so as not to damage the substrate 1.

押圧力制御機構5は、押圧力を段階的に調整できるように構成しても良いし、連続的に調整できるように構成しても良い。本実施例の押圧力制御機構5は一般的な電動シリンダであり、押圧力を連続的に調整できるように構成している。 The pressing force control mechanism 5 may be configured so that the pressing force can be adjusted stepwise or continuously. The pressing force control mechanism 5 of this embodiment is a general electric cylinder, and is configured so that the pressing force can be continuously adjusted.

本実施例において押圧力制御機構5は、少なくとも基板1とマスク2との接触開始時は、このマスク2との接触に伴う基板保持体3上での基板1の位置ずれを許容する仮挟持用の押圧力としている。つまり、押圧力制御機構5は、前記接触開始時においては、支持具7とび押圧具8によって、基板1を挟持しながらも、その挟持位置が移動可能な挟力となるように制御している。なお、「挟持位置が移動可能な挟力」は、後述する載置工程におけるマスク2から基板1への加力によって、挟持位置が移動可能な挟力である。そして、押圧力制御機構5は、基板1をマスク2上に載置した後は、基板保持体3上での基板1の位置ずれを阻止するため前記接触開始時より強い本挟持用の押圧力とするように制御している。つまり、押圧力制御機構5は、基板1をマスク2に載置した後は、支持具7とび押圧具8によって、基板1の挟持位置が固定可能な挟力となるように制御している。 In the present embodiment, the pressing force control mechanism 5 is for temporary holding that allows the displacement of the substrate 1 on the substrate holder 3 due to the contact with the mask 2 at least at the start of contact between the substrate 1 and the mask 2. It is the pressing pressure of. That is, at the start of the contact, the pressing force control mechanism 5 controls the support tool 7 and the pressing tool 8 so that the holding position of the substrate 1 can be moved while holding the substrate 1. .. The "pinching force at which the pinching position can be moved" is a pinching force at which the pinching position can be moved by the force applied from the mask 2 to the substrate 1 in the mounting step described later. Then, after the substrate 1 is placed on the mask 2, the pressing force control mechanism 5 prevents the substrate 1 from being displaced on the substrate holding body 3, so that the pressing force for holding the substrate is stronger than at the start of the contact. It is controlled to be. That is, after the substrate 1 is placed on the mask 2, the pressing force control mechanism 5 controls the holding position of the substrate 1 to be a pinching force that can be fixed by the support 7 and the pressing tool 8.

仮挟持用の押圧力は、少なくとも、支持具7と押圧具8との間隔が基板1の厚みと同程度となり基板1の外周部が基板保持体3と押圧具8とに係止する程度であれば良い。具体的には、本実施例においては、基板1の外周部を押圧することで、基板1の周辺が押され、下側に撓んでいる基板1の中央部分が、てこの原理により多少押し上げられる程度の押圧力に設定している。 The pressing force for temporary holding is such that the distance between the support 7 and the press 8 is at least about the same as the thickness of the substrate 1, and the outer peripheral portion of the substrate 1 is locked to the substrate holder 3 and the press 8. All you need is. Specifically, in this embodiment, by pressing the outer peripheral portion of the substrate 1, the periphery of the substrate 1 is pushed, and the central portion of the substrate 1 bent downward is slightly pushed up by the principle of the lever. The pressing force is set to a certain degree.

また、本挟持用の押圧力は、基板1がマスク2に対して位置ずれしないように強固に挟持した一般的な挟持状態と同程度であれば良い。 Further, the pressing force for this pinching may be about the same as the general pinching state in which the substrate 1 is firmly pinched so as not to be displaced with respect to the mask 2.

また、基板移動機構6は、押圧力制御機構5が前記接触開始時より強い押圧力に変更した後、基板1とマスク2とのアライメントを行うために基板保持体3を移動させるように構成されている。即ち、本挟持した状態を維持して基板載置工程後のアライメント工程等を行うようにしている。なお、アライメントは、基板1とマスク2の相対位置を調整するものである。 Further, the substrate moving mechanism 6 is configured to move the substrate holding body 3 in order to align the substrate 1 and the mask 2 after the pressing force control mechanism 5 changes the pressing force to be stronger than that at the start of the contact. ing. That is, the alignment process and the like after the substrate mounting process are performed while maintaining the pinched state. The alignment adjusts the relative positions of the substrate 1 and the mask 2.

支持具7及び押圧具8(挟持機構)は、基板1の複数の辺部に当接するように複数設けられている。本実施例では、支持具7及び押圧具8は対向する一対の辺部に当接するように一対設けられている。本実施例では挟持機構に対応して押圧力制御機構5も一対設けられている。 A plurality of supports 7 and pressing tools 8 (pinching mechanisms) are provided so as to abut on a plurality of side portions of the substrate 1. In this embodiment, the support 7 and the press 8 are provided in pairs so as to abut on the pair of opposite side portions. In this embodiment, a pair of pushing pressure control mechanisms 5 are also provided corresponding to the holding mechanism.

また、本実施例では、図7に図示したように、基板1の1つの辺部に対して当該辺部の長手方向略全体に当接するように前記一対の支持具7及び押圧具8が夫々構成されている。なお、実施例2に示すように、1つの辺部に対して複数の支持具7及び押圧具8を設けて1つの辺部を多数点で支持及び挟持する構成としても良い。また、基板1の角部を複数箇所挟持する構成としても良い。 Further, in the present embodiment, as shown in FIG. 7, the pair of supports 7 and the pressing tool 8 each contact one side portion of the substrate 1 with respect to substantially the entire longitudinal direction of the side portion. It is configured. As shown in the second embodiment, a plurality of supporters 7 and pressing tools 8 may be provided for one side portion to support and sandwich one side portion at a large number of points. Further, the configuration may be such that the corner portions of the substrate 1 are sandwiched at a plurality of locations.

以上の構成の基板移動機構6及び挟持機構を用い、外周部が挟持機構により仮挟持された基板1をマスク2上に載置した後、外周部を本挟持する。 Using the substrate moving mechanism 6 and the sandwiching mechanism having the above configuration, the substrate 1 whose outer peripheral portion is temporarily sandwiched by the sandwiching mechanism is placed on the mask 2, and then the outer peripheral portion is actually sandwiched.

即ち、基板移動機構6により、外周部が仮挟持されている基板1とマスク2との相対距離を近づけ、少なくとも基板1とマスク2との接触時には仮挟持状態とし、基板1の全体がマスク2に接触して載置が終了した後、基板1の外周部を本挟持する。 That is, the substrate moving mechanism 6 brings the relative distance between the substrate 1 and the mask 2 whose outer peripheral portion is temporarily sandwiched close to each other, and at least when the substrate 1 and the mask 2 come into contact with each other, the mask 2 is temporarily sandwiched. After the placement is completed in contact with the substrate 1, the outer peripheral portion of the substrate 1 is actually sandwiched.

具体的には、図3~図6に示したように、例えば、真空チャンバ10外部の基板搬送機構から搬送された基板1を真空チャンバ10内に搬入して基板保持体3で受け取り(図3)、その後、基板1を仮挟持する(挟持工程)。続いて、基板1をマスク2に載置するための下降開始時点(図4)、マスク2との接触開始から載置途中時点(図5)及び基板1のマスク2への載置完了時点まで(載置工程)は仮挟持を維持しておき、その後、少なくとも後の工程であるアライメント工程の前に、本挟持する(図6)。図6中、符号12はアライメント用カメラである。 Specifically, as shown in FIGS. 3 to 6, for example, the substrate 1 conveyed from the substrate transfer mechanism outside the vacuum chamber 10 is carried into the vacuum chamber 10 and received by the substrate holder 3 (FIG. 3). ), Then the substrate 1 is temporarily sandwiched (pinching step). Subsequently, from the start of lowering for mounting the substrate 1 on the mask 2 (FIG. 4), from the start of contact with the mask 2 to the intermediate mounting time (FIG. 5), and to the completion of mounting the substrate 1 on the mask 2. In the (placement step), the temporary pinching is maintained, and then the main pinching is performed at least before the alignment step which is a later step (FIG. 6). In FIG. 6, reference numeral 12 is an alignment camera.

これにより、マスク2との接触面積を増加させながら基板1が下降していく際、仮挟持状態で基板1がマスク2と接触することで、挟持機構により基板1の変形が阻害されず、基板1が外方に伸展していく際に、基板1をマスク2に良好に沿わせることができ、基板1を歪みなくマスク2と密着させた状態で重ね合わせることが可能となる。従って、安定的に基板1を搬送しつつ、マスク2との接触時の変形を防止して膜ボケを良好に防止できることになる。 As a result, when the substrate 1 descends while increasing the contact area with the mask 2, the substrate 1 comes into contact with the mask 2 in the temporarily sandwiched state, so that the deformation of the substrate 1 is not hindered by the sandwiching mechanism, and the substrate 1 is not hindered. When 1 extends outward, the substrate 1 can be well aligned with the mask 2, and the substrate 1 can be overlapped with the mask 2 in close contact with the mask 2 without distortion. Therefore, while stably transporting the substrate 1, deformation at the time of contact with the mask 2 can be prevented and film blurring can be satisfactorily prevented.

更に、仮挟持状態では基板1は基板保持体3に対して完全に自由な状態ではなく、押圧具8と基板保持体3とに挟まれて仮固定されるから、基板1をマスク2に載置した際に基板1の全体がマスク2に対して大きく位置ずれてしまうことが防止される。 Further, in the temporarily sandwiched state, the substrate 1 is not completely free with respect to the substrate holder 3, but is sandwiched between the pressing tool 8 and the substrate holder 3 and temporarily fixed, so that the substrate 1 is placed on the mask 2. It is possible to prevent the entire substrate 1 from being largely displaced with respect to the mask 2 when placed.

(実施例2)
以下、成膜装置に適用した場合の更なる具体的な例(実施例2)について説明する。ただし、以下の実施例は本発明の好ましい構成を例示的に示すものにすぎず、本発明の範囲をそれらの構成に限定されない。また、以下の説明における、装置のハードウェア構成及びソフトウェア構成、処理フロー、製造条件、寸法、材質、形状などは、特に特定的な記載がないかぎりは、本発明の範囲をそれらのみに限定する趣旨のものではない。
(Example 2)
Hereinafter, a further specific example (Example 2) when applied to a film forming apparatus will be described. However, the following examples merely illustrate preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. Further, unless otherwise specified, the hardware configuration and software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. of the apparatus in the following description are limited to those of the present invention. It is not the purpose.

本発明は、基板上に薄膜を形成する成膜装置及びその制御方法に関し、特に、基板の高精度な搬送および位置調整のための技術に関する。本発明は、平行平板の基板の表面に真空蒸着により所望のパターンの薄膜(材料層)を形成する装置に好ましく適用できる。基板の材料としては、ガラス、樹脂、金属などの任意の材料を選択でき、また、蒸着材料としても、有機材料、無機材料(金属、金属酸化物など)などの任意の材料を選択できる。本発明の技術は、具体的には、有機電子デバイス(例えば、有機EL表示装置、薄膜太陽電池)、光学部材などの製造装置に適用可能である。なかでも、有機EL表示装置の製造装置は、基板の大型化あるいは表示パネルの高精細化により基板の搬送精度及び基板とマスクのアライメント精度のさらなる向上が要求されているため、本発明の好ましい適用例の一つである。 The present invention relates to a film forming apparatus for forming a thin film on a substrate and a control method thereof, and more particularly to a technique for highly accurate transfer and position adjustment of the substrate. INDUSTRIAL APPLICABILITY The present invention can be preferably applied to an apparatus for forming a thin film (material layer) having a desired pattern on the surface of a parallel plate substrate by vacuum vapor deposition. As the substrate material, any material such as glass, resin, and metal can be selected, and as the vapor deposition material, any material such as an organic material and an inorganic material (metal, metal oxide, etc.) can be selected. Specifically, the technique of the present invention can be applied to a manufacturing apparatus such as an organic electronic device (for example, an organic EL display device, a thin film solar cell), an optical member, and the like. In particular, the organic EL display device manufacturing apparatus is required to further improve the transfer accuracy of the substrate and the alignment accuracy of the substrate and the mask by increasing the size of the substrate or increasing the definition of the display panel. Therefore, the preferred application of the present invention is made. This is one of the examples.

<製造装置及び製造プロセス>
図8は、電子デバイスの製造装置の構成の一部を模式的に示す上視図である。図8の製造装置は、例えば、スマートフォン用の有機EL表示装置の表示パネルの製造に用いられる。スマートフォン用の表示パネルの場合、例えば約1800MM×約1500MM、厚み約0.5MMのサイズの基板に有機ELの成膜を行った後、該基板をダイシングして複
数の小サイズのパネルが作製される。
<Manufacturing equipment and manufacturing process>
FIG. 8 is an upper view schematically showing a part of the configuration of the electronic device manufacturing apparatus. The manufacturing apparatus of FIG. 8 is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone. In the case of a display panel for a smartphone, for example, after forming an organic EL film on a substrate having a size of about 1800 MM × about 1500 MM and a thickness of about 0.5 MM, the substrate is diced to produce a plurality of small-sized panels. To.

電子デバイスの製造装置は、一般に、図8に示すように、複数の成膜室111、112と、搬送室110とを有する。搬送室110内には、基板1を保持し搬送する搬送ロボット119が設けられている。搬送ロボット119は、例えば、多関節アームに、基板1を保持するロボットハンドが取り付けられた構造をもつロボットであり、各成膜室への基板1の搬入/搬出を行う。 An electronic device manufacturing apparatus generally has a plurality of film forming chambers 111 and 112 and a transport chamber 110, as shown in FIG. A transfer robot 119 that holds and conveys the substrate 1 is provided in the transfer chamber 110. The transfer robot 119 is, for example, a robot having a structure in which a robot hand for holding the substrate 1 is attached to an articulated arm, and carries in / out the substrate 1 to each film forming chamber.

各成膜室111、112にはそれぞれ成膜装置(蒸着装置ともよぶ)が設けられている。搬送ロボット119との基板1の受け渡し、基板1とマスクの相対位置の調整(アライメント)、マスク上への基板1の固定、成膜(蒸着)などの一連の成膜プロセスは、成膜装置によって自動で行われる。各成膜室の成膜装置は、蒸着源の違いやマスクの違いなど細かい点で相違する部分はあるものの、基本的な構成(特に基板の搬送やアライメントに関わる構成)はほぼ共通している。以下、各成膜室の成膜装置の共通構成について説明する。 Each of the film forming chambers 111 and 112 is provided with a film forming apparatus (also referred to as a vapor deposition apparatus). A series of film forming processes such as transfer of the substrate 1 to and from the transfer robot 119, adjustment of the relative position between the substrate 1 and the mask (alignment), fixing of the substrate 1 on the mask, and film formation (deposited film) are performed by the film forming apparatus. It is done automatically. Although the film forming equipment in each film forming chamber differs in small points such as the difference in the vapor deposition source and the difference in the mask, the basic configurations (particularly the configurations related to the transfer and alignment of the substrate) are almost the same. .. Hereinafter, a common configuration of the film forming apparatus in each film forming chamber will be described.

<成膜装置>
図9は、成膜装置の構成を模式的に示す断面図である。以下の説明においては、鉛直方向をZ方向とするXYZ直交座標系を用いる。成膜時に基板は水平面(XY平面)と平行となるよう固定されるものとし、このときの基板の短手方向(短辺に平行な方向)をX方向、長手方向(長辺に平行な方向)をY方向とする。またZ軸まわりの回転角をΘで表す。
<Film formation device>
FIG. 9 is a cross-sectional view schematically showing the configuration of the film forming apparatus. In the following description, an XYZ Cartesian coordinate system with the vertical direction as the Z direction is used. The substrate is fixed so as to be parallel to the horizontal plane (XY plane) at the time of film formation, and the lateral direction (direction parallel to the short side) of the substrate at this time is the X direction and the longitudinal direction (direction parallel to the long side). ) Is in the Y direction. The angle of rotation around the Z axis is represented by Θ.

成膜装置は、真空チャンバ200を有する。真空チャンバ200の内部は、真空雰囲気か、窒素ガスなどの不活性ガス雰囲気に維持されている。真空チャンバ200の内部には、概略、基板保持ユニット210と、マスク220と、マスク台221と、冷却板230と、蒸着源240が設けられる。 The film forming apparatus has a vacuum chamber 200. The inside of the vacuum chamber 200 is maintained in a vacuum atmosphere or an atmosphere of an inert gas such as nitrogen gas. Inside the vacuum chamber 200, a substrate holding unit 210, a mask 220, a mask stand 221, a cooling plate 230, and a vapor deposition source 240 are roughly provided.

基板保持ユニット210は、搬送ロボット119から受け取った基板1を保持・搬送する手段であり、基板ホルダとも呼ばれる。この基板保持ユニット210は、上記実施例1における基板保持体3に相当する。マスク220は、基板1上に形成する薄膜パターンに対応する開口パターンをもつメタルマスクであり、枠状のマスク台221の上に固定されている。なお、マスク台221は、上記実施例1におけるマスク保持体4に相当する。 The board holding unit 210 is a means for holding and transporting the board 1 received from the transfer robot 119, and is also called a board holder. The substrate holding unit 210 corresponds to the substrate holding body 3 in the first embodiment. The mask 220 is a metal mask having an opening pattern corresponding to the thin film pattern formed on the substrate 1, and is fixed on the frame-shaped mask base 221. The mask stand 221 corresponds to the mask holder 4 in the first embodiment.

成膜時にはマスク220の上に基板1が載置される。したがってマスク220は基板1を載置する載置体としての役割も担う。冷却板230は、成膜時に基板1(のマスク220とは反対側の面)に密着し、基板1の温度上昇を抑えることで有機材料の変質や劣化を抑制する部材である。冷却板230がマグネット板を兼ねていてもよい。マグネット板とは、磁力によってマスク220を引き付けることで、成膜時の基板1とマスク220の密着性を高める部材である。蒸着源240は、蒸着材料、ヒータ、シャッタ、蒸発源の駆動機構、蒸発レートモニタなどから構成される(いずれも不図示)。 At the time of film formation, the substrate 1 is placed on the mask 220. Therefore, the mask 220 also serves as a mounting body on which the substrate 1 is mounted. The cooling plate 230 is a member that adheres to the substrate 1 (the surface opposite to the mask 220) during film formation and suppresses the temperature rise of the substrate 1 to suppress deterioration or deterioration of the organic material. The cooling plate 230 may also serve as a magnet plate. The magnet plate is a member that enhances the adhesion between the substrate 1 and the mask 220 at the time of film formation by attracting the mask 220 by a magnetic force. The thin-film deposition source 240 includes a thin-film deposition material, a heater, a shutter, a drive mechanism for the evaporation source, an evaporation rate monitor, and the like (all not shown).

真空チャンバ200の上(外側)には、基板Zアクチュエータ250、クランプZアクチュエータ251、冷却板Zアクチュエータ252、Xアクチュエータ(不図示)、Yアクチュエータ(不図示)、Θアクチュエータ(不図示)が設けられている。これらのアクチュエータは、例えば、モータとボールねじ、モータとリニアガイドなどで構成される。基板Zアクチュエータ250は、基板保持ユニット210の全体を昇降(Z方向移動)させるための駆動手段である。この基板Zアクチュエータ250は、上記実施例1における基板移動機構6に相当する。クランプZアクチュエータ251は、基板保持ユニット210の挟持機構(後述)を開閉させるための駆動手段である。このクランプZアクチュエー
タ251は、上記実施例1における押圧力制御機構5に相当する。
A substrate Z actuator 250, a clamp Z actuator 251 and a cooling plate Z actuator 252, an X actuator (not shown), a Y actuator (not shown), and an Θ actuator (not shown) are provided on the vacuum chamber 200 (outside). ing. These actuators are composed of, for example, a motor and a ball screw, a motor and a linear guide, and the like. The substrate Z actuator 250 is a driving means for raising and lowering (moving in the Z direction) the entire substrate holding unit 210. The substrate Z actuator 250 corresponds to the substrate moving mechanism 6 in the first embodiment. The clamp Z actuator 251 is a driving means for opening and closing the holding mechanism (described later) of the substrate holding unit 210. The clamp Z actuator 251 corresponds to the pressing force control mechanism 5 in the first embodiment.

冷却板Zアクチュエータ252は、冷却板230を昇降させるための駆動手段である。Xアクチュエータ、Yアクチュエータ、Θアクチュエータ(以下まとめて「XYΘアクチュエータ」と呼ぶ)は基板1のアライメントのための駆動手段である。XYΘアクチュエータは、基板保持ユニット210及び冷却板230の全体を、X方向移動、Y方向移動、Θ回転させる。なお、本実施例では、マスク220を固定した状態で基板1のX,Y,Θを調整する構成としたが、マスク220の位置を調整し、又は、基板1とマスク220の両者の位置を調整することで、基板1とマスク220のアライメントを行ってもよい。 The cooling plate Z actuator 252 is a driving means for raising and lowering the cooling plate 230. The X actuator, Y actuator, and Θ actuator (hereinafter collectively referred to as “XY Θ actuator”) are driving means for alignment of the substrate 1. The XYΘ actuator moves the entire substrate holding unit 210 and the cooling plate 230 in the X direction, moves in the Y direction, and rotates by Θ. In this embodiment, the X, Y, and Θ of the substrate 1 are adjusted with the mask 220 fixed, but the position of the mask 220 is adjusted or the positions of both the substrate 1 and the mask 220 are adjusted. By adjusting, the substrate 1 and the mask 220 may be aligned.

真空チャンバ200の上(外側)には、基板1及びマスク220のアライメントのために、基板1及びマスク220それぞれの位置を測定するカメラ260、261が設けられている。カメラ260、261は、真空チャンバ200に設けられた窓を通して、基板1とマスク220を撮影する。その画像から基板1上のアライメントマーク及びマスク220上のアライメントマークを認識することで、各々のXY位置やXY面内での相対ズレを計測することができる。短時間で高精度なアライメントを実現するために、大まかに位置合わせを行う第1の位置調整工程である第1アライメント(「ラフアライメント」とも称す)と、高精度に位置合わせを行う第2の位置調整工程である第2アライメント(「ファインアライメント」とも称す)の2段階のアライメントを実施することが好ましい。その場合、低解像だが広視野の第1アライメント用のカメラ260と狭視野だが高解像の第2アライメント用のカメラ261の2種類のカメラを用いるとよい。本実施例では、基板1及びマスク220それぞれについて、対向する一対の辺の2箇所に付されたアライメントマークを2台の第1アライメント用のカメラ260で測定し、基板1及びマスク220の4隅に付されたアライメントマークを4台の第2アライメント用のカメラ261で測定する。なお、第1アライメントと第2アライメントがなされる場合、第1アライメントがなされた後に、マスク220に基板1が載置され(載置工程)、その後、第2アライメントがなされる。 On the upper side (outside) of the vacuum chamber 200, cameras 260 and 261 for measuring the positions of the substrate 1 and the mask 220 are provided for alignment of the substrate 1 and the mask 220. The cameras 260 and 261 photograph the substrate 1 and the mask 220 through a window provided in the vacuum chamber 200. By recognizing the alignment mark on the substrate 1 and the alignment mark on the mask 220 from the image, it is possible to measure each XY position and the relative deviation in the XY plane. In order to achieve high-precision alignment in a short time, the first alignment (also called "rough alignment"), which is the first position adjustment process for rough alignment, and the second alignment for high-precision alignment are performed. It is preferable to carry out two-step alignment of the second alignment (also referred to as "fine alignment") which is a position adjustment step. In that case, it is preferable to use two types of cameras, a low-resolution but wide-field first alignment camera 260 and a narrow-field but high-resolution second alignment camera 261. In this embodiment, the alignment marks attached to the two opposite sides of the substrate 1 and the mask 220 are measured by two cameras 260 for the first alignment, and the four corners of the substrate 1 and the mask 220 are measured. The alignment mark attached to is measured by four cameras 261 for the second alignment. When the first alignment and the second alignment are performed, the substrate 1 is placed on the mask 220 after the first alignment is performed (mounting step), and then the second alignment is performed.

成膜装置は、制御部270を有する。制御部270は、基板Zアクチュエータ250、クランプZアクチュエータ251、冷却板Zアクチュエータ252、XYΘアクチュエータ、及びカメラ260、261の制御の他、基板1の搬送及びアライメント、蒸着源の制御、成膜の制御などの機能を有する。制御部270は、例えば、プロセッサ、メモリ、ストレージ、I/Oなどを有するコンピュータにより構成可能である。この場合、制御部270の機能は、メモリ又はストレージに記憶されたプログラムをプロセッサが実行することにより実現される。コンピュータとしては、汎用のパーソナルコンピュータを用いてもよいし、組込型のコンピュータ又はPLC(PROGRAMMABLE LOGIC CONTROLLER)を用いてもよい。あるいは、制御部270の機能の一部又は全部をASICやFPGAのような回路で構成してもよい。なお、成膜装置ごとに制御部270が設けられていてもよいし、1つの制御部270が複数の成膜装置を制御してもよい。 The film forming apparatus has a control unit 270. The control unit 270 controls the substrate Z actuator 250, the clamp Z actuator 251, the cooling plate Z actuator 252, the XYΘ actuator, and the cameras 260 and 261, as well as the transfer and alignment of the substrate 1, the control of the vapor deposition source, and the control of film formation. It has functions such as. The control unit 270 can be configured by, for example, a computer having a processor, memory, storage, I / O, and the like. In this case, the function of the control unit 270 is realized by the processor executing the program stored in the memory or the storage. As the computer, a general-purpose personal computer may be used, or a built-in computer or a PLC (PROGRAMMABLE LOGIC CONTROLLER) may be used. Alternatively, a part or all of the functions of the control unit 270 may be configured by a circuit such as an ASIC or FPGA. A control unit 270 may be provided for each film forming apparatus, or one control unit 270 may control a plurality of film forming apparatus.

なお、基板1の保持・搬送及びアライメントに関わる構成部分(基板保持ユニット210、基板Zアクチュエータ250、クランプZアクチュエータ251、XYΘアクチュエータ、カメラ260、261、制御部270など)は、「基板載置装置」、「基板挟持装置」、「基板搬送装置」などとも呼ばれる。 The components (board holding unit 210, board Z actuator 250, clamp Z actuator 251, XYΘ actuator, cameras 260, 261, control unit 270, etc.) related to the holding / transporting and alignment of the board 1 are "board mounting devices". , "Board holding device", "board transfer device" and the like.

<基板保持ユニット>
図10を参照して基板保持ユニット210の構成を説明する。図10は基板保持ユニット210の斜視図である。
<Board holding unit>
The configuration of the substrate holding unit 210 will be described with reference to FIG. FIG. 10 is a perspective view of the substrate holding unit 210.

基板保持ユニット210は、挟持機構によって基板1の周縁部を挟持することにより、
基板1を保持・搬送する手段である。具体的には、基板保持ユニット210は、基板1の4辺それぞれを下から支持する複数の支持具300が設けられた支持枠体301と、各支持具300との間で基板1を挟み込む複数の押圧具302が設けられたクランプ部材303とを有する。一対の支持具300と押圧具302とで1つの挟持機構が構成される。図10の例では、基板1の短辺に沿って3つの支持具300が配置され、長辺に沿って6つの挟持機構(支持具300と押圧具302のペア)が配置されており、長辺2辺を挟持する構成となっている。ただし挟持機構の構成は図10の例に限られず、処理対象となる基板のサイズや形状あるいは成膜条件などに合わせて、挟持機構の数や配置を適宜変更してもよい。なお、支持具300は「受け爪」又は「フィンガ」とも呼ばれ、押圧具302は「クランプ」とも呼ばれる。
The substrate holding unit 210 sandwiches the peripheral edge portion of the substrate 1 by the sandwiching mechanism.
It is a means for holding and transporting the substrate 1. Specifically, the substrate holding unit 210 is a plurality of supporting frames 301 provided with a plurality of supports 300 for supporting each of the four sides of the substrate 1 from below, and a plurality of the substrate holding units 210 sandwiching the substrate 1 between the supports 300. It has a clamp member 303 provided with a pressing tool 302 of the above. A pair of supports 300 and a pressing member 302 form one holding mechanism. In the example of FIG. 10, three supports 300 are arranged along the short side of the substrate 1, and six holding mechanisms (a pair of the support 300 and the pressing tool 302) are arranged along the long side, and the length is long. It is configured to sandwich two sides. However, the configuration of the pinching mechanism is not limited to the example of FIG. 10, and the number and arrangement of the pinching mechanisms may be appropriately changed according to the size and shape of the substrate to be processed, the film forming conditions, and the like. The support 300 is also referred to as a "claw" or "finger", and the press 302 is also referred to as a "clamp".

搬送ロボット119から基板保持ユニット210への基板1の受け渡しは例えば次のように行われる。まず、クランプZアクチュエータ251によりクランプ部材303を上昇させ、押圧具302を支持具300から離間させることで、挟持機構を解放状態にする。搬送ロボット119によって支持具300と押圧具302の間に基板1を導入した後、クランプZアクチュエータ251によってクランプ部材303を下降させ、押圧具302を所定の押圧力で支持具300に押し当てる。これにより、押圧具302と支持具300の間で基板1が挟持される。この状態で基板Zアクチュエータ250により基板保持ユニット210を駆動することで、基板1を昇降(Z方向移動)させることができる。なお、クランプZアクチュエータ251は基板保持ユニット210と共に上昇/下降するため、基板保持ユニット210が昇降しても挟持機構の状態は変化しない。 The transfer of the substrate 1 from the transfer robot 119 to the substrate holding unit 210 is performed, for example, as follows. First, the clamp member 303 is raised by the clamp Z actuator 251 to separate the pressing tool 302 from the support tool 300, so that the holding mechanism is released. After the substrate 1 is introduced between the support tool 300 and the pressing tool 302 by the transfer robot 119, the clamp member 303 is lowered by the clamp Z actuator 251 and the pressing tool 302 is pressed against the support tool 300 with a predetermined pressing force. As a result, the substrate 1 is sandwiched between the pressing tool 302 and the supporting tool 300. By driving the substrate holding unit 210 by the substrate Z actuator 250 in this state, the substrate 1 can be moved up and down (moved in the Z direction). Since the clamp Z actuator 251 moves up / down together with the board holding unit 210, the state of the holding mechanism does not change even if the board holding unit 210 moves up and down.

ここで、基板保持ユニット210が基板1を受け取ってから、基板1をマスク220に載置させるまでのクランプZアクチュエータ251と基板Zアクチュエータ250による動作(載置工程)については、実施例1の場合と同様である。すなわち、本実施例においても、基板Zアクチュエータ250により基板保持ユニット210を下降させる過程において、少なくとも基板1とマスク220との接触開始時には、クランプZアクチュエータ251による押圧力は、仮挟持用の押圧力となっている。つまり、基板1とマスク220との接触に伴う基板保持ユニット210上での基板1の位置ずれが許容されている。そして、基板Zアクチュエータ250により基板保持ユニット210が更に下降し、基板1がマスク220上に載置された後においては、クランプZアクチュエータ251による押圧力は、本挟持用の押圧力となっている。つまり、上記の接触開始時よりも強い本挟持用の押圧力とすることで、基板保持ユニット210上での基板1の位置ずれが阻止されている。押圧力等の詳細については、実施例1で説明した通りであるので、その説明は省略する。以上により、本実施例においても、上記実施例1の場合と同様の効果が得られることは言うまでもない。 Here, the operation (mounting step) by the clamp Z actuator 251 and the board Z actuator 250 from the time when the board holding unit 210 receives the board 1 to the time when the board 1 is mounted on the mask 220 is the case of the first embodiment. Is similar to. That is, also in this embodiment, in the process of lowering the substrate holding unit 210 by the substrate Z actuator 250, at least at the start of contact between the substrate 1 and the mask 220, the pressing force by the clamp Z actuator 251 is the pressing force for temporary holding. It has become. That is, the displacement of the substrate 1 on the substrate holding unit 210 due to the contact between the substrate 1 and the mask 220 is allowed. Then, after the substrate holding unit 210 is further lowered by the substrate Z actuator 250 and the substrate 1 is placed on the mask 220, the pressing force by the clamp Z actuator 251 is the pressing force for main holding. .. That is, the displacement of the substrate 1 on the substrate holding unit 210 is prevented by setting the pressing force for main holding, which is stronger than that at the start of the contact. Since the details of the pressing force and the like are as described in the first embodiment, the description thereof will be omitted. From the above, it goes without saying that the same effect as in the case of the above-mentioned Example 1 can be obtained in this Example as well.

<アライメント>
本実施例においては、第1アライメントがなされた後に、基板1がマスク220に載置されて、クランプZアクチュエータ251による押圧力が、本挟持用の押圧力となった後に、第2アライメントがなされる。なお、図10中の符号101は、基板1の4隅に付された第2アライメント用のアライメントマークを示し、符号102は、基板1の短辺中央に付された第1アライメント用のアライメントマークを示している。
<Alignment>
In this embodiment, after the first alignment is performed, the substrate 1 is placed on the mask 220, and the pressing force by the clamp Z actuator 251 becomes the pressing force for main holding, and then the second alignment is performed. To. Reference numeral 101 in FIG. 10 indicates an alignment mark for the second alignment attached to the four corners of the substrate 1, and reference numeral 102 indicates an alignment mark for the first alignment attached to the center of the short side of the substrate 1. Is shown.

各アライメントを行う際においては、XYΘアクチュエータによって、基板1がマスク220と摺動しないように、基板1をマスク220から少し離れた状態で、基板1の位置調整がなされる。まず、2台の第1アライメント用のカメラ260を用いて、2か所の第1アライメント用のマーク102とマスク220に付された2箇所の第1アライメント用のマーク(不図示)がいずれも一致するように基板1の位置調整が行われる。その後、一旦、基板1がマスク220に載置される(載置工程)。この載置工程後に、上記の通り、
本挟持用の押圧力により基板1と基板保持ユニット210が挟持され、再び、基板1がマスク200から少し離される。そして、4台の第2アライメント用のカメラ260を用いて、4か所の第2アライメント用のマーク101とマスク220に付された4箇所の第2アライメント用のマーク(不図示)がいずれも一致するように基板1の位置調整が行われる。その後、再び、基板1はマスク220に載置される。以上のアライメントにより、基板1がマスク220に対して精度良く位置決めされた状態で密着した状態となる。なお、上記の載置工程に関しては、第2アライメント後に、基板1をマスク220に載置する場合にも適用可能である。
In each alignment, the XYΘ actuator adjusts the position of the substrate 1 with the substrate 1 slightly separated from the mask 220 so that the substrate 1 does not slide with the mask 220. First, using two cameras for first alignment 260, two marks 102 for first alignment and two marks for first alignment (not shown) attached to the mask 220 are both. The position of the substrate 1 is adjusted so as to match. After that, the substrate 1 is once mounted on the mask 220 (mounting step). After this placement process, as described above,
The substrate 1 and the substrate holding unit 210 are sandwiched by the pressing force for this pinching, and the substrate 1 is slightly separated from the mask 200 again. Then, using the four cameras 260 for the second alignment, the four marks 101 for the second alignment and the four marks for the second alignment (not shown) attached to the mask 220 are all. The position of the substrate 1 is adjusted so as to match. After that, the substrate 1 is placed on the mask 220 again. By the above alignment, the substrate 1 is in close contact with the mask 220 in a state of being accurately positioned. The above mounting step can also be applied to the case where the substrate 1 is mounted on the mask 220 after the second alignment.

<電子デバイスの製造方法の実施例>
次に、本実施例に係る成膜装置を用いた電子デバイスの製造方法の一例を説明する。以下、電子デバイスの例として有機EL表示装置の構成及び製造方法を例示する。
<Example of manufacturing method of electronic device>
Next, an example of a method for manufacturing an electronic device using the film forming apparatus according to this embodiment will be described. Hereinafter, the configuration and manufacturing method of the organic EL display device will be illustrated as an example of the electronic device.

まず、製造する有機EL表示装置について説明する。図11(A)は有機EL表示装置60の全体図、図11(B)は1画素の断面構造を表している。 First, the organic EL display device to be manufactured will be described. FIG. 11A shows an overall view of the organic EL display device 60, and FIG. 11B shows a cross-sectional structure of one pixel.

図11(A)に示すように、有機EL表示装置60の表示領域61には、発光素子を複数備える画素62がマトリクス状に複数配置されている。詳細は後で説明するが、発光素子のそれぞれは、一対の電極に挟まれた有機層を備えた構造を有している。なお、ここでいう画素とは、表示領域61において所望の色の表示を可能とする最小単位を指している。本実施例にかかる有機EL表示装置の場合、互いに異なる発光を示す第1発光素子62R、第2発光素子62G、第3発光素子62Bの組合せにより画素62が構成されている。画素62は、赤色発光素子と緑色発光素子と青色発光素子の組合せで構成されることが多いが、黄色発光素子とシアン発光素子と白色発光素子の組み合わせでもよく、少なくとも1色以上であれば特に制限されるものではない。 As shown in FIG. 11A, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix in the display area 61 of the organic EL display device 60. Although the details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The pixel referred to here refers to the smallest unit capable of displaying a desired color in the display area 61. In the case of the organic EL display device according to this embodiment, the pixel 62 is composed of a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B, which emit light different from each other. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element, and is particularly limited to at least one color. It is not limited.

図11(B)は、図11(A)のA-B線における部分断面模式図である。画素62は、基板63上に、第1電極(陽極)64と、正孔輸送層65と、発光層66R,66G,66Bのいずれかと、電子輸送層67と、第2電極(陰極)68と、を備える有機EL素子を有している。これらのうち、正孔輸送層65、発光層66R,66G,66B、電子輸送層67が有機層に当たる。また、本実施形態では、発光層66Rは赤色を発する有機EL層、発光層66Gは緑色を発する有機EL層、発光層66Bは青色を発する有機EL層である。発光層66R,66G,66Bは、それぞれ赤色、緑色、青色を発する発光素子(有機EL素子と記述する場合もある)に対応するパターンに形成されている。また、第1電極64は、発光素子ごとに分離して形成されている。正孔輸送層65と電子輸送層67と第2電極68は、複数の発光素子62R,62G,62Bと共通で形成されていてもよいし、発光素子毎に形成されていてもよい。なお、第1電極64と第2電極68とが異物によってショートするのを防ぐために、第1電極64間に絶縁層69が設けられている。さらに、有機EL層は水分や酸素によって劣化するため、水分や酸素から有機EL素子を保護するための保護層70が設けられている。 11 (B) is a schematic partial cross-sectional view taken along the line AB of FIG. 11 (A). The pixel 62 has a first electrode (anode) 64, a hole transport layer 65, one of the light emitting layers 66R, 66G, 66B, an electron transport layer 67, and a second electrode (cathode) 68 on the substrate 63. It has an organic EL element comprising. Of these, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to the organic layer. Further, in the present embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. The light emitting layers 66R, 66G, and 66B are formed in a pattern corresponding to a light emitting element (sometimes referred to as an organic EL element) that emits red, green, and blue, respectively. Further, the first electrode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the second electrode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the first electrodes 64 in order to prevent the first electrode 64 and the second electrode 68 from being short-circuited by foreign matter. Further, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

有機EL層を発光素子単位に形成するためには、マスクを介して成膜する方法が用いられる。近年、表示装置の高精細化が進んでおり、有機EL層の形成には開口の幅が数十ΜMのマスクが用いられる。このようなマスクを用いた成膜の場合、マスクが成膜中に蒸発源から受熱して熱変形するとマスクと基板との位置がずれてしまい、基板上に形成される薄膜のパターンが所望の位置からずれて形成されてしまう。そこで、これら有機EL層の成膜には本発明にかかる成膜装置(真空蒸着装置)が好適に用いられる。 In order to form the organic EL layer in units of light emitting elements, a method of forming a film through a mask is used. In recent years, the definition of display devices has been increasing, and a mask having an opening width of several tens of μM is used to form an organic EL layer. In the case of film formation using such a mask, if the mask receives heat from an evaporation source during film formation and is thermally deformed, the positions of the mask and the substrate are displaced, and a pattern of a thin film formed on the substrate is desired. It will be formed out of position. Therefore, the film forming apparatus (vacuum vapor deposition apparatus) according to the present invention is preferably used for the film formation of these organic EL layers.

次に、有機EL表示装置の製造方法の例について具体的に説明する。 Next, an example of a method for manufacturing an organic EL display device will be specifically described.

まず、有機EL表示装置を駆動するための回路(不図示)および第1電極64が形成された基板63を準備する。 First, a circuit (not shown) for driving the organic EL display device and a substrate 63 on which the first electrode 64 is formed are prepared.

第1電極64が形成された基板63の上にアクリル樹脂をスピンコートで形成し、アクリル樹脂をリソグラフィ法により、第1電極64が形成された部分に開口が形成されるようにパターニングし絶縁層69を形成する。この開口部が、発光素子が実際に発光する発光領域に相当する。 Acrylic resin is formed by spin coating on the substrate 63 on which the first electrode 64 is formed, and the acrylic resin is patterned by a lithography method so that an opening is formed in the portion where the first electrode 64 is formed to form an insulating layer. Form 69. This opening corresponds to a light emitting region where the light emitting element actually emits light.

絶縁層69がパターニングされた基板63を第1の成膜装置に搬入し、基板保持ユニットにて基板を保持し、正孔輸送層65を、表示領域の第1電極64の上に共通する層として成膜する。正孔輸送層65は真空蒸着により成膜される。実際には正孔輸送層65は表示領域61よりも大きなサイズに形成されるため、高精細なマスクは不要である。 The substrate 63 in which the insulating layer 69 is patterned is carried into the first film forming apparatus, the substrate is held by the substrate holding unit, and the hole transport layer 65 is a common layer on the first electrode 64 in the display region. To form a film. The hole transport layer 65 is formed by vacuum vapor deposition. In reality, the hole transport layer 65 is formed in a size larger than that of the display region 61, so that a high-definition mask is unnecessary.

次に、正孔輸送層65までが形成された基板63を第2の成膜装置に搬入し、基板保持ユニットにて保持する。基板とマスクとのアライメントを行い、基板をマスクの上に載置し、基板63の赤色を発する素子を配置する部分に、赤色を発する発光層66Rを成膜する。本例によれば、マスクと基板とを良好に重ね合わせることができ、高精度な成膜を行うことができる。 Next, the substrate 63 on which the hole transport layer 65 is formed is carried into the second film forming apparatus and held by the substrate holding unit. The substrate and the mask are aligned, the substrate is placed on the mask, and the light emitting layer 66R that emits red is formed on the portion of the substrate 63 where the element that emits red is arranged. According to this example, the mask and the substrate can be satisfactorily overlapped with each other, and high-precision film formation can be performed.

発光層66Rの成膜と同様に、第3の成膜装置により緑色を発する発光層66Gを成膜し、さらに第4の成膜装置により青色を発する発光層66Bを成膜する。発光層66R、66G、66Bの成膜が完了した後、第5の成膜装置により表示領域61の全体に電子輸送層67を成膜する。電子輸送層67は、3色の発光層66R、66G、66Bに共通の層として形成される。 Similar to the film formation of the light emitting layer 66R, the light emitting layer 66G that emits green is formed by the third film forming apparatus, and the light emitting layer 66B that emits blue is further formed by the fourth film forming apparatus. After the film formation of the light emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed on the entire display region 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the light emitting layers 66R, 66G, and 66B of three colors.

電子輸送層67までが形成された基板をスパッタリング装置に移動し、第2電極68を成膜し、その後プラズマCVD装置に移動して保護層70を成膜して、有機EL表示装置60が完成する。 The substrate on which the electron transport layer 67 is formed is moved to a sputtering device to form a second electrode 68, and then moved to a plasma CVD device to form a protective layer 70 to complete the organic EL display device 60. do.

絶縁層69がパターニングされた基板63を成膜装置に搬入してから保護層70の成膜が完了するまでは、水分や酸素を含む雰囲気にさらしてしまうと、有機EL材料からなる発光層が水分や酸素によって劣化してしまうおそれがある。従って、本例において、成膜装置間の基板の搬入搬出は、真空雰囲気または不活性ガス雰囲気の下で行われる。 From the time when the substrate 63 in which the insulating layer 69 is patterned is carried into the film forming apparatus until the film formation of the protective layer 70 is completed, when the substrate 63 is exposed to an atmosphere containing moisture or oxygen, a light emitting layer made of an organic EL material is formed. It may be deteriorated by moisture and oxygen. Therefore, in this example, the loading and unloading of the substrate between the film forming apparatus is performed in a vacuum atmosphere or an inert gas atmosphere.

このようにして得られた有機EL表示装置は、発光素子ごとに発光層が精度よく形成される。従って、上記製造方法を用いれば、発光層の位置ずれに起因する有機EL表示装置の不良の発生を抑制することができる。 In the organic EL display device thus obtained, a light emitting layer is accurately formed for each light emitting element. Therefore, if the above manufacturing method is used, it is possible to suppress the occurrence of defects in the organic EL display device due to the misalignment of the light emitting layer.

1 基板
2,220 マスク
3 基板保持体
4 マスク保持体
5 押圧力制御機構
6 基板移動機構
7,300 支持具
8,302 押圧具
210 基板保持ユニット(基板保持体に相当)
221 マスク台(マスク保持体に相当)
250 基板Zアクチュエータ(基板移動機構に相当)
251 クランプZアクチュエータ(押圧力制御機構に相当)
1 Board 2,220 Mask 3 Board holder 4 Mask holder 5 Pushing pressure control mechanism 6 Board moving mechanism 7,300 Supporter 8,302 Presser 210 Board holding unit (equivalent to board holder)
221 Mask stand (equivalent to mask holder)
250 Board Z actuator (equivalent to board movement mechanism)
251 Clamp Z actuator (equivalent to push pressure control mechanism)

Claims (15)

基板を下方から支持する基板支持具と、基板を前記基板支持具に押圧する押圧具とによって基板の外周部を挟持する基板保持体と
マスクを保持するマスク保持体と、
前記基板支持具を前記マスク保持体に対して昇降させる昇降手段と、
基板を前記押圧具により第1の押圧力で前記基板支持具に押圧した状態で該基板とマスクとのアライメントを行うアライメント機構と、を備える成膜装置において、
前記基板を前記押圧具により前記第1の押圧力よりも弱く、かつ、基板の挟持位置が移動可能な程度の第2の押圧力で前記基板支持具に押圧した状態で、前記昇降手段によって前記基板支持具に支持された該基板を前記マスク保持体に保持されたマスクに接触させてマスクの上に載置することを特徴とする成膜装置。
A substrate support that supports the substrate from below, and a substrate holder that sandwiches the outer peripheral portion of the substrate by a pressing tool that presses the substrate against the substrate support.
A mask holder that holds the mask, and a mask holder
Elevating means for raising and lowering the substrate support with respect to the mask holder, and
In a film forming apparatus provided with an alignment mechanism for aligning a substrate with a mask while the substrate is pressed against the substrate support by the pressing tool with the first pressing force.
The substrate is pressed against the substrate support by the pressing tool with a second pressing force that is weaker than the first pressing force and the holding position of the substrate can be moved by the elevating means. A film forming apparatus characterized in that the substrate supported by the substrate support is brought into contact with a mask held by the mask holder and placed on the mask .
記押圧具により前記第1の押圧力で前記基板を前記基板支持具に押し当てた状態で前記基板保持体を移動させて前記基板と前記マスクとのアライメントを行った後に、成膜を行うことを特徴とする請求項1に記載の成膜装置。 The substrate holder is moved while the substrate is pressed against the substrate support by the pressing tool with the first pressing force to align the substrate with the mask, and then film formation is performed. The film forming apparatus according to claim 1. 前記アライメントは、前記基板と前記マスクとを離間させた状態で、前記基板と前記マスクとの相対位置を調整することを特徴とする請求項1または2に記載の成膜装置。 The film forming apparatus according to claim 1 or 2, wherein the alignment adjusts a relative position between the substrate and the mask while the substrate and the mask are separated from each other. 前記押圧具による押圧力を変更する押圧力制御機構を備え、
前記押圧力制御機構によって前記押圧具による押圧力が前記第2の押圧力から前記第1の押圧力に変更された後に、前記基板保持体が移動されて前記アライメントが行われることを特徴とする請求項3に記載の成膜装置。
It is equipped with a pressing force control mechanism that changes the pressing force by the pressing tool.
The substrate holder is moved to perform the alignment after the pressing force by the pressing tool is changed from the second pressing force to the first pressing force by the pressing force control mechanism. The film forming apparatus according to claim 3.
前記押圧力制御機構は、押圧力を段階的に調整できるように構成されていることを特徴とする請求項4に記載の成膜装置。 The film forming apparatus according to claim 4, wherein the pressing force control mechanism is configured so that the pressing force can be adjusted stepwise. 前記押圧力制御機構は、押圧力を連続的に調整できるように構成されていることを特徴とする請求項4に記載の成膜装置。 The film forming apparatus according to claim 4, wherein the pressing force control mechanism is configured so that the pressing force can be continuously adjusted. 基板を下方から支持する基板支持具と、基板を前記基板支持具に押圧する押圧具とによって基板の外周部を挟持する基板保持体と
マスクを保持するマスク保持体と、
前記基板支持具を前記マスク保持体に対して昇降させる昇降手段と、を備える成膜装置における制御方法において、
基板を前記押圧具により第1の押圧力で前記基板支持具に押圧した状態で該基板とマスクとのアライメントを行うアライメント工程と、
前記基板を前記押圧具により前記第1の押圧力よりも弱く、かつ、基板の挟持位置が移動可能な程度の第2の押圧力で前記基板支持具に押圧した状態で、前記昇降手段によって前記基板支持具に支持された該基板を前記マスク保持体に保持されたマスクに接触させてマスクの上に載置する接触工程と、
を備えることを特徴とする制御方法。
A substrate support that supports the substrate from below, and a substrate holder that sandwiches the outer peripheral portion of the substrate by a pressing tool that presses the substrate against the substrate support.
A mask holder that holds the mask, and a mask holder
In a control method in a film forming apparatus including a means for raising and lowering the substrate support with respect to the mask holder.
An alignment step of aligning the substrate with the mask while the substrate is pressed against the substrate support by the pressing tool with the first pressing force.
The substrate is pressed against the substrate support by the pressing tool with a second pressing force that is weaker than the first pressing force and the holding position of the substrate can be moved by the elevating means. A contact step in which the substrate supported by the substrate support is brought into contact with the mask held by the mask holder and placed on the mask .
A control method characterized by comprising.
前記接触工程の後に、前記基板を前記マスクから離間させてから前記アライメント工程を行わせることを特徴とする請求項7に記載の制御方法。 The control method according to claim 7, wherein after the contact step, the substrate is separated from the mask and then the alignment step is performed. 前記アライメント工程の後に、前記基板に成膜を行う成膜工程を備えることを特徴とする請求項8に記載の制御方法。 The control method according to claim 8, further comprising a film forming step of forming a film on the substrate after the alignment step. 基板を下方から支持する基板支持具と、基板を前記基板支持具に押圧する押圧具とによって基板の外周部を挟持する基板保持体と
マスクを保持するマスク保持体と、
前記基板支持具を前記マスク保持体に対して昇降させる昇降手段と、を備える成膜装置によって、基板上に成膜される電子デバイスの製造方法であって、
基板を前記押圧具により第1の押圧力で前記基板支持具に押圧した状態で該基板とマスクとのアライメントを行うアライメント工程と、
前記基板を前記押圧具により前記第1の押圧力よりも弱く、かつ、基板の挟持位置が移動可能な程度の第2の押圧力で前記基板支持具に押圧した状態で、前記昇降手段によって前記基板支持具に支持された該基板を前記マスク保持体に保持されたマスクに接触させてマスクの上に載置する接触工程と、
を備えることを特徴とする電子デバイスの製造方法。
A substrate support that supports the substrate from below, and a substrate holder that sandwiches the outer peripheral portion of the substrate by a pressing tool that presses the substrate against the substrate support.
A mask holder that holds the mask, and a mask holder
A method for manufacturing an electronic device to be formed on a substrate by a film forming apparatus provided with an elevating means for raising and lowering the substrate support with respect to the mask holder.
An alignment step of aligning the substrate with the mask while the substrate is pressed against the substrate support by the pressing tool with the first pressing force.
The substrate is pressed against the substrate support by the pressing tool with a second pressing force that is weaker than the first pressing force and the holding position of the substrate can be moved by the elevating means. A contact step in which the substrate supported by the substrate support is brought into contact with the mask held by the mask holder and placed on the mask .
A method of manufacturing an electronic device, which comprises.
前記成膜装置によって、基板上に金属膜が成膜されることを特徴とする請求項10に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 10, wherein a metal film is formed on a substrate by the film forming apparatus. 前記成膜装置によって、基板上に有機膜が成膜されることを特徴とする請求項10に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 10, wherein an organic film is formed on a substrate by the film forming apparatus. 前記電子デバイスが、有機EL表示装置の表示パネルであることを特徴とする請求項10ないし12のいずれか1項に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to any one of claims 10 to 12, wherein the electronic device is a display panel of an organic EL display device. 前記接触工程の後に、前記基板を前記マスクから離間させてから前記アライメント工程を行わせることを特徴とする請求項10ないし13のいずれか1項に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to any one of claims 10 to 13, wherein after the contact step, the substrate is separated from the mask and then the alignment step is performed. 前記アライメント工程の後に、前記基板に成膜を行う成膜工程を備えることを特徴とする請求項14に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 14, further comprising a film forming step of forming a film on the substrate after the alignment step.
JP2020163136A 2016-06-24 2020-09-29 Film forming equipment, control method, and manufacturing method of electronic devices Active JP6999769B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016125835 2016-06-24
JP2016125835 2016-06-24

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2017101232A Division JP6876520B2 (en) 2016-06-24 2017-05-22 Substrate sandwiching method, substrate sandwiching device, film forming method, film forming device, and electronic device manufacturing method, substrate mounting method, alignment method, substrate mounting device

Publications (2)

Publication Number Publication Date
JP2021008668A JP2021008668A (en) 2021-01-28
JP6999769B2 true JP6999769B2 (en) 2022-01-19

Family

ID=60945911

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2017101232A Active JP6876520B2 (en) 2016-06-24 2017-05-22 Substrate sandwiching method, substrate sandwiching device, film forming method, film forming device, and electronic device manufacturing method, substrate mounting method, alignment method, substrate mounting device
JP2020163136A Active JP6999769B2 (en) 2016-06-24 2020-09-29 Film forming equipment, control method, and manufacturing method of electronic devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2017101232A Active JP6876520B2 (en) 2016-06-24 2017-05-22 Substrate sandwiching method, substrate sandwiching device, film forming method, film forming device, and electronic device manufacturing method, substrate mounting method, alignment method, substrate mounting device

Country Status (3)

Country Link
JP (2) JP6876520B2 (en)
KR (1) KR101901066B1 (en)
CN (2) CN113802106B (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108203812B (en) * 2018-01-25 2020-02-07 京东方科技集团股份有限公司 Substrate fixing carrier, evaporation equipment and evaporation method
KR101941404B1 (en) * 2018-04-18 2019-01-22 캐논 톡키 가부시키가이샤 Plate-to-be-treated storage apparatus, plate-to-be-treated storage method and deposition method using the same
KR102355418B1 (en) * 2018-04-26 2022-01-24 캐논 톡키 가부시키가이샤 Substrate conveying system, method and apparatus for manufacturing electronic devices
KR20190124610A (en) * 2018-04-26 2019-11-05 캐논 톡키 가부시키가이샤 Substrate conveying system, method and apparatus for manufacturing electronic devices
KR101979149B1 (en) * 2018-04-27 2019-05-15 캐논 톡키 가부시키가이샤 Alignment method, deposition method using the same and electronic device
KR102150450B1 (en) * 2018-05-11 2020-09-01 주식회사 선익시스템 Vacuum chamber capable of emergency escape and apparatus for deposition having the same
KR102550586B1 (en) * 2018-10-31 2023-06-30 캐논 톡키 가부시키가이샤 Adsorption and alignment method, adsorption system, film forming method, film forming apparatus, and manufacturing method of electronic device
KR102017626B1 (en) * 2018-11-27 2019-09-03 캐논 톡키 가부시키가이샤 Film formation apparatus, film formation method and manufacturing method of electronic device
JP7170524B2 (en) * 2018-12-14 2022-11-14 キヤノントッキ株式会社 Substrate mounting method, film forming method, film forming apparatus, organic EL panel manufacturing system
JP7194006B2 (en) * 2018-12-18 2022-12-21 キヤノントッキ株式会社 Substrate mounting method, film forming method, film forming apparatus, and organic EL panel manufacturing system
KR102578750B1 (en) * 2018-12-27 2023-09-13 캐논 톡키 가부시키가이샤 Alignment system, film formation apparatus, film formation method, and manufacturing method of electronic device
KR102133900B1 (en) * 2018-12-27 2020-07-15 캐논 톡키 가부시키가이샤 Alignment system, film formation apparatus, film formation method, and manufacturing method of electronic device
KR101999304B1 (en) * 2019-01-18 2019-07-12 주식회사 뉴비전네트웍스 Image processing system for correcting a distorted picture and update information
CN113226771B (en) * 2019-01-24 2023-09-08 Agc株式会社 Substrate holding device, substrate holding method, and curved screen printing device provided with substrate holding device
KR20200104969A (en) * 2019-02-27 2020-09-07 캐논 톡키 가부시키가이샤 Alignment apparatus, film forming apparatus, alignment method, film forming method and manufacturing method of electronic device
JP2022525767A (en) 2019-03-15 2022-05-19 アプライド マテリアルズ インコーポレイテッド Sedimentary masks and methods of manufacturing and using sedimentary masks
JP7292948B2 (en) * 2019-04-24 2023-06-19 キヤノン株式会社 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
WO2020242611A1 (en) 2019-05-24 2020-12-03 Applied Materials, Inc. System and method for aligning a mask with a substrate
US11189516B2 (en) 2019-05-24 2021-11-30 Applied Materials, Inc. Method for mask and substrate alignment
WO2020251696A1 (en) 2019-06-10 2020-12-17 Applied Materials, Inc. Processing system for forming layers
US10916464B1 (en) 2019-07-26 2021-02-09 Applied Materials, Inc. Method of pre aligning carrier, wafer and carrier-wafer combination for throughput efficiency
WO2021025052A1 (en) * 2019-08-07 2021-02-11 株式会社カネカ Large-size thin-film deposition substrate and method for manufacturing same, segmented thin-film deposition substrate and method for manufacturing same, and production management method and production management system for segmented thin-film deposition substrate
KR102323256B1 (en) 2019-09-19 2021-11-08 엘지전자 주식회사 Self assembly device for semiconductor light emitting device
WO2021054548A1 (en) 2019-09-19 2021-03-25 Lg Electronics Inc. Substrate chuck for self-assembling semiconductor light-emitting diodes
KR102387811B1 (en) * 2019-09-27 2022-04-18 엘지전자 주식회사 Substrate chuck for self assembly of semiconductor light emitting device
CN110512184B (en) * 2019-09-29 2021-10-22 京东方科技集团股份有限公司 Substrate clamping device and evaporation equipment
JP7202329B2 (en) * 2020-05-11 2023-01-11 キヤノントッキ株式会社 Alignment Apparatus, Film Forming Apparatus, Alignment Method, Electronic Device Manufacturing Method, Program and Storage Medium
JP2022007540A (en) * 2020-06-26 2022-01-13 キヤノントッキ株式会社 Alignment device, film deposition apparatus, alignment method, electronic device manufacturing method, program and storage medium
JP2022083681A (en) * 2020-11-25 2022-06-06 キヤノントッキ株式会社 Alignment device, film formation device, alignment method, film formation method, and manufacturing method of electronic device
CN113328010A (en) * 2021-05-28 2021-08-31 安徽华晟新能源科技有限公司 Preparation method of solar cell

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005087969A1 (en) 2004-03-11 2005-09-22 Ulvac, Inc. Alignment equipment and film forming equipment
JP2011222683A (en) 2010-04-08 2011-11-04 Yaskawa Electric Corp Gripper

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003019988A1 (en) * 2001-08-24 2003-03-06 Dai Nippon Printing Co., Ltd. Multi-face forming mask device for vacuum deposition
JP2005158571A (en) * 2003-11-27 2005-06-16 Seiko Epson Corp Method of manufacturing organic electroluminescent panel, manufacturing apparatus of organic electroluminescent panel, and organic electroluminescent panel
JP4609757B2 (en) * 2005-02-23 2011-01-12 三井造船株式会社 Substrate mounting method in film forming apparatus
KR20070046375A (en) * 2005-10-31 2007-05-03 주성엔지니어링(주) Apparatus for aligning substrate and mask, and method of aligning using the same
JP4773834B2 (en) * 2006-02-03 2011-09-14 キヤノン株式会社 Mask film forming method and mask film forming apparatus
JP4726814B2 (en) * 2007-01-16 2011-07-20 株式会社日立ハイテクノロジーズ Substrate positioning device and positioning method
KR100914527B1 (en) * 2007-09-18 2009-09-02 세메스 주식회사 Apparatus for preventing subside of substrate and method thereof
JP5297046B2 (en) * 2008-01-16 2013-09-25 キヤノントッキ株式会社 Deposition equipment
JP5238393B2 (en) * 2008-07-31 2013-07-17 キヤノン株式会社 Film forming apparatus and film forming method using the same
KR101569796B1 (en) * 2009-06-23 2015-11-20 주성엔지니어링(주) Apparatus for aligning a substrate apparatus for processing a substrate therewith and method for aligning a substrate
JP2011106017A (en) * 2009-11-20 2011-06-02 Canon Inc Pressing device, film-forming apparatus provided with the same, and film-forming method
KR101725993B1 (en) * 2009-12-22 2017-04-11 엘지디스플레이 주식회사 Method for fabricating liquid crystal display device
KR101748842B1 (en) * 2010-08-24 2017-06-20 삼성디스플레이 주식회사 An organic light emitting display device and the manufacturing method thereof
KR101512560B1 (en) * 2012-08-31 2015-04-15 가부시키가이샤 스크린 홀딩스 Substrate processing apparatus
KR101479943B1 (en) * 2013-10-29 2015-01-12 주식회사 에스에프에이 The System and Method to Align Substrate and Mask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005087969A1 (en) 2004-03-11 2005-09-22 Ulvac, Inc. Alignment equipment and film forming equipment
JP2011222683A (en) 2010-04-08 2011-11-04 Yaskawa Electric Corp Gripper

Also Published As

Publication number Publication date
KR101901066B1 (en) 2018-09-20
CN113802106A (en) 2021-12-17
JP2021008668A (en) 2021-01-28
KR20180001472A (en) 2018-01-04
JP6876520B2 (en) 2021-05-26
CN113802106B (en) 2023-09-12
CN107541711A (en) 2018-01-05
JP2018003151A (en) 2018-01-11

Similar Documents

Publication Publication Date Title
JP6999769B2 (en) Film forming equipment, control method, and manufacturing method of electronic devices
KR102241187B1 (en) Substrate supporting apparatus, substrate mounting apparatus, film formation apparatus, substrate supporting method, film formation method, and manufacturing method of electronic device
JP6351918B2 (en) Substrate mounting method, film forming method, and electronic device manufacturing method
JP6393802B1 (en) Substrate placing apparatus, substrate placing method, film forming apparatus, film forming method, alignment apparatus, alignment method, and electronic device manufacturing method
JP6448067B2 (en) Substrate mounting method, substrate mounting mechanism, film forming method, film forming apparatus, and electronic device manufacturing method
CN108677158B (en) Substrate transfer mechanism, substrate mounting mechanism, film forming apparatus and method thereof
JP7244401B2 (en) Alignment apparatus, film formation apparatus, alignment method, film formation method, and electronic device manufacturing method
JP7296303B2 (en) Alignment system, deposition apparatus, deposition method, electronic device manufacturing method, and alignment apparatus
KR102128888B1 (en) Film forming apparatus, film forming method and manufacturing method of electronic device
JP6821641B2 (en) Substrate mounting equipment, film forming equipment, substrate mounting method, film forming method, and manufacturing method of electronic devices
JP7438865B2 (en) Alignment equipment, film forming equipment, alignment method, electronic device manufacturing method, program and storage medium
JP2022083681A (en) Alignment device, film formation device, alignment method, film formation method, and manufacturing method of electronic device
JP2021073373A (en) Substrate mounting method, substrate holding device, and method for producing electronic device
KR20210028626A (en) Alignment apparatus, film forming apparatus, alignment method, film forming method and manufacturing method of electronic device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200929

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20211019

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211126

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20211207

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20211222

R150 Certificate of patent or registration of utility model

Ref document number: 6999769

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150