CN113328010A - Preparation method of solar cell - Google Patents
Preparation method of solar cell Download PDFInfo
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- CN113328010A CN113328010A CN202110594930.4A CN202110594930A CN113328010A CN 113328010 A CN113328010 A CN 113328010A CN 202110594930 A CN202110594930 A CN 202110594930A CN 113328010 A CN113328010 A CN 113328010A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 167
- 239000004065 semiconductor Substances 0.000 claims abstract description 97
- 238000005520 cutting process Methods 0.000 claims abstract description 95
- 238000000034 method Methods 0.000 claims abstract description 77
- 238000003698 laser cutting Methods 0.000 claims description 51
- 238000000576 coating method Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 8
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 239000007888 film coating Substances 0.000 abstract description 4
- 238000009501 film coating Methods 0.000 abstract description 4
- 238000007665 sagging Methods 0.000 description 6
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a preparation method of a solar cell, which comprises the steps of providing a shading strip; providing a substrate device, wherein the substrate device comprises a device area and a scribing area, and the substrate device comprises a semiconductor substrate layer and a first doped semiconductor layer positioned on one side of the semiconductor substrate layer; placing the substrate device above the shading strips, wherein the shading strips contact the first doped semiconductor layer of the scribing region, and the surface of the first doped semiconductor layer of the device region is exposed; forming a first transparent conductive film on the surface of the first doped semiconductor layer in the device region by using the shading strip as a mask through a film coating process; after the first transparent conductive film is formed, scribing the substrate device along the scribing region; the width of the shielding strip is larger than the cutting width of the substrate device in the step of scribing the substrate device along the scribing region. The method improves the photoelectric conversion efficiency of the solar cell.
Description
Technical Field
The invention relates to the technical field of solar cell manufacturing, in particular to a preparation method of a solar cell.
Background
The side length of the solar cell silicon wafer is 125mm, 156mm, 158.75mm, 166mm, 180mm and 182mm, and the maximum size is 210 mm. With the increase of the size of the solar cell, the current of the solar cell is increased, the series connection loss after the current mismatch is correspondingly increased, in order to reduce the electric loss of the large-size solar cell, the large-size solar cell adopts a half-cutting design before series connection, and for a 210mm cell with a larger area, a three-cutting design is further adopted to reduce the packaging loss of the solar cell.
The slicing method of the solar cell provided by the prior art generally adopts the laser cutting and splitting process, and the transparent conductive films (TCO) on the two sides of the heterojunction cell (HJT) are both provided with the transparent conductive films (TCO), so that after the laser pre-cutting and splitting, the transparent conductive films on the two sides of the heterojunction cell are damaged and easily conducted, the performance of the sliced heterojunction cell is affected, and the slicing method needs to be improved.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the problem of the prior art that the conversion efficiency of the solar cell is reduced after the solar cell is sliced, so as to provide a method for manufacturing a solar cell.
The invention provides a preparation method of a solar cell, which comprises the following steps: providing a sunshade strip; providing a substrate device comprising a device region and a scribe region, the substrate device comprising: the semiconductor substrate layer and the first doped semiconductor layer are positioned on one side of the semiconductor substrate layer; placing the substrate device over the standoff bars, the standoff bars contacting the first doped semiconductor layer of the scribe area, a surface of the first doped semiconductor layer of the device area being exposed; forming a first transparent conductive film on the surface of the first doped semiconductor layer in the device region by using the shading strip as a mask through a coating process; after the first transparent conductive film is formed, scribing the substrate device along the scribing region; the width of the shielding strip is larger than the cutting width of the substrate device in the step of scribing the substrate device along the scribing region.
Optionally, the coating process includes a reactive plasma deposition process or a magnetron sputtering coating process, and a coating source used in the coating process is located on a side of the support bar away from the substrate device.
Optionally, the width of the shading strip is 0.8 mm-2 mm.
Optionally, the thickness of the shading strip is 0.4 mm-3 mm.
Optionally, the length of the sunshade strip is 100 mm-250 mm.
Optionally, the material of the shade strip includes stainless steel, carbon fiber, aluminum, titanium alloy, or graphite.
Optionally, the support frame further includes a support frame body, and a hollow opening penetrating through the support frame body is formed in the support frame body; the covering bar is fixedly connected with the side wall of the bracket body and is positioned in the hollow opening; the preparation method of the solar cell further comprises the following steps: providing a carrier plate, wherein the carrier plate is provided with an opening penetrating through the carrier plate; inserting the bracket into the opening, wherein the side wall of the bracket body is opposite to the side wall of the opening; the step of placing the substrate device over the blanking bar comprises: and placing the substrate device in the hollow-out opening and enabling the substrate device to be positioned above the covering strip.
Optionally, after the bracket is inserted into the opening, the substrate device is placed in the hollow and is located above the shading strip.
Optionally, the stent body includes an annular first extension portion, an annular second extension portion, and an annular middle stent portion; the middle support part is positioned between the first extension part and the second extension part, the top end of the middle support part is connected with the first extension part, the bottom end of the middle support part is connected with the second extension part, the inner diameter of the first extension part is larger than that of the second extension part, and two ends of the shielding strip are fixedly connected with the side wall of the second extension part; the step of inserting the stent into the opening comprises: the second extending part and the middle bracket part are embedded into the opening, and the first extending part is positioned on the surface of part of the carrier plate at the side part of the opening.
Optionally, the width of the hollow opening surrounded by the middle support part is 100 mm-250 mm, and the length of the hollow opening surrounded by the middle support part is 100 mm-250 mm.
Optionally, the method further includes: providing a carrier plate, wherein the carrier plate is provided with an opening penetrating through the carrier plate, the covering strip is positioned in the opening, and two ends of the covering strip are fixedly connected with the side wall of the carrier plate; the step of placing the substrate device over the blanking bar comprises: the substrate device is placed in the opening with the substrate device over the blanking bars.
Optionally, the number of the covering strips is a plurality, the covering strips are distributed at intervals, and the arrangement direction of the covering strips is parallel to the supporting surface of the covering strips.
Optionally, the substrate device further includes: the second doped semiconductor layer is positioned on the other side of the semiconductor substrate layer, and the conductivity type of the second doped semiconductor layer is opposite to that of the first doped semiconductor layer; before dicing the substrate device along the dicing area, the method for manufacturing a solar cell further comprises: and forming a second transparent conductive film on one side of the second doped semiconductor layer, which faces away from the semiconductor substrate layer.
Optionally, the step of dicing the substrate device along the dicing area includes: defining cutting lines on the scribing area, wherein the cutting lines comprise a first cutting line, a second cutting line and a third cutting line, and the first cutting line and the third cutting line are respectively positioned at two sides of the second cutting line in the extending direction of the second cutting line; cutting a portion of the thickness of the substrate device along the first cut line by a first laser cutting process; cutting a partial thickness of the substrate device along the third cutting line by a third laser cutting process; and cutting part of the substrate device along the second cutting line by a second laser cutting process, wherein the cutting depth along the second cutting line is less than that along the first cutting line and that along the third cutting line.
Optionally, the length of the first cutting line is 0.2mm to 0.8mm, and the length of the third cutting line is 0.2mm to 0.8 mm.
Optionally, the substrate device is diced from a side of the first transparent conductive film facing away from the semiconductor substrate layer.
Optionally, the laser wavelength used in the second laser cutting process is greater than the laser wavelength used in the first laser cutting process and greater than the laser wavelength used in the third laser cutting process.
Optionally, the cutting depth of the first laser cutting process extends into at least a partial thickness of the semiconductor substrate layer; the cutting depth of the third laser cutting process extends into at least a partial thickness of the semiconductor substrate layer.
Optionally, the conductivity type of the first doped semiconductor layer is opposite to the conductivity type of the semiconductor substrate layer; and scribing the substrate device from the side of the first transparent conductive film, which faces away from the semiconductor substrate layer.
The technical scheme of the invention has the following beneficial effects:
1. according to the preparation method of the solar cell, before scribing is carried out on the substrate device along the scribing region, the shielding bar is adopted to shield the first doped semiconductor layer of the scribing region, the first transparent conductive film cannot be formed in the region shielded by the shielding bar, and the first transparent conductive films on adjacent device regions are mutually isolated. Because the width of the shielding strip is larger than the cutting width of the substrate device in the step of scribing the substrate device along the scribing region, a certain distance is reserved between the scribing position when the substrate device is scribed along the scribing region and the edge of the first transparent conductive film, so that the first transparent conductive film can be prevented from being acted in the process of scribing the substrate device along the scribing region, and the material of the first transparent conductive film is prevented from being conducted with a film layer in the substrate device. Secondly, the substrate device is arranged above the shading strip, the shading strip is in contact with the first doped semiconductor layer of the scribing area, the surface of the first doped semiconductor layer of the device area is exposed, and in the process of forming the first transparent conductive film, the shading strip supports the substrate device due to the fact that the substrate device is in close contact with the shading strip under the action of self gravity, the sagging degree of the substrate device in the film coating process is reduced, and deformation allowance of the substrate device caused by sagging can be not considered in the supporting area of the support body for the substrate device. Therefore, the photoelectric conversion efficiency of the solar cell is improved.
2. Furthermore, the width of the shielding strip is 0.8 mm-2.0 mm, and the design enables the first transparent conductive film to form a partition area in the area shielded by the shielding strip, so that after the substrate device is scribed along the scribing area, the distance from the edge of the cutting surface to the edge of the nearest first transparent conductive film is more than 0.5mm, and effective electrical isolation between the first transparent conductive film and the semiconductor substrate layer is ensured. And cutting under the condition that the central line of the second laser cutting process is strictly coincident with the central line of the shielding strip, wherein the minimum distance from the edge of the cutting line to the edge of the first transparent conductive film is at least 0.5 mm. And the region of the portion not covered by the first transparent conductive film is covered with the first doped semiconductor layer.
3. Furthermore, the number of the shading strips in the support is a plurality of, the shading strips are distributed at intervals, the slicing scheme can be reasonably designed according to the size of the solar cell, the number and the positions of the shading strips are reasonably arranged, a plurality of scribing areas are defined in the process of forming the first transparent conductive film at one time, and the slicing efficiency of the solar cell is improved.
4. Further, the conductivity type of the first doped semiconductor layer is opposite to that of the semiconductor substrate layer; in order to improve the capability of the solar cell to receive photons, the side of the first transparent conductive film facing away from the semiconductor substrate layer is arranged as the back side of the solar cell. And scribing the substrate device from the side of the first transparent conductive film, which is back to the semiconductor substrate layer, so that the damage to the front side of the solar cell is small, and the photoelectric conversion efficiency of the solar cell is high.
5. Further, the step of scribing the substrate device along the scribing region comprises a first laser cutting process, a second laser cutting process and a third laser cutting process, after the first laser cutting process and the third laser cutting process are carried out, an auxiliary scribing notch is formed in the substrate device, then the substrate device is cut through the second laser cutting process, and the substrate device is cracked along the auxiliary scribing notch under the action of thermal stress; the center line of the cutting position of the second laser cutting process is required to be strictly coincided with the center line of the shielding strip during laser cutting, and the cutting depth of the second laser cutting process is smaller than that of the first laser cutting process and smaller than that of the third laser cutting process, so that the area of a laser cutting surface is reduced, the area occupied by a fracture surface is increased, the defects on the surface of the fracture surface are fewer than those on the laser cutting surface, and the photoelectric conversion efficiency of the solar cell piece is further improved.
The preparation method of the solar cell is particularly suitable for slicing the heterojunction cell, can better avoid conduction caused by damage of transparent conductive films on two sides of the heterojunction cell, and further avoids performance reduction of the heterojunction cell caused by cutting.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing a solar cell according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a carrier according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a bracket according to an embodiment of the present invention;
FIG. 4 is a schematic view of a bracket inserted into an opening according to an embodiment of the present invention;
fig. 5 is a schematic structural view of a substrate device disposed over a standoff bar according to an embodiment of the present invention;
FIG. 6 is a schematic view of a cutting line provided in accordance with an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a solar cell semi-finished product according to an embodiment of the present invention;
fig. 8 is a schematic structural view of a shielding strip located in an opening of a carrier according to another embodiment of the present invention;
in the drawings, wherein:
1-a carrier plate, 1 a-an opening, 2-a support body, 201-a first extension part, 202-a second extension part, 203-a middle support part, 2 a-a hollow, 3-a shielding bar, 4-a substrate device, 401-a semiconductor substrate layer, 402-a second intrinsic semiconductor layer, 403-a second doped semiconductor layer, 404-a second transparent conductive film, 405-a first intrinsic semiconductor layer, 406-a first doped semiconductor layer, 407-a first transparent conductive film, 5-a cutting line, 501-a first cutting line, 502-a second cutting line, 503-a third cutting line.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
An embodiment of the present invention provides a method for manufacturing a solar cell, please refer to fig. 1, which includes the following steps:
s1: providing a sunshade strip;
s2: providing a substrate device comprising a device region and a scribe region, the substrate device comprising: a semiconductor substrate layer and a first doped semiconductor layer located on one side of the semiconductor substrate layer (it is noted that the step S1 and the step S2 are not in sequence);
s3: placing the substrate device over the standoff bars, the standoff bars contacting the first doped semiconductor layer of the scribe area, a surface of the first doped semiconductor layer of the device area being exposed;
s4: forming a first transparent conductive film on the surface of the first doped semiconductor layer in the device region by using the shading strip as a mask through a coating process;
s5: after the first transparent conductive film is formed, scribing the substrate device along the scribing region; the width of the shielding strip is larger than the cutting width of the substrate device in the step of scribing the substrate device along the scribing region.
Referring to fig. 2, the method for manufacturing a solar cell further includes: a carrier plate 1 is provided, said carrier plate 1 having an opening 1a through said carrier plate 1.
Referring to fig. 3, the supporting strip 3 is a part of a bracket, the bracket further includes a bracket body 2, and the bracket body 2 has a hollow opening 2a penetrating through the bracket body 2; the shielding strip 3 is fixedly connected with the side wall of the bracket body 2 and is positioned in the hollow opening 2 a.
The material of the stent body 2 comprises stainless steel.
In this embodiment, the number of the shielding bars 3 in the support is one, in other embodiments, the number of the shielding bars 3 in the support is a plurality of, a plurality of the shielding bars 3 are distributed at intervals, and a plurality of the arrangement directions of the shielding bars 3 are parallel to the supporting surfaces of the shielding bars 3, so that the slicing scheme can be reasonably designed according to the size of the solar cell, the number and the positions of the shielding bars are reasonably set, a plurality of slicing areas are defined in the process of forming the first transparent conductive film at one time, and the slicing efficiency of the solar cell is improved.
Specifically, the thickness of the sunshade strip 3 is 0.4mm to 3mm, for example, 0.4mm, 1mm, 2mm, 2.5mm, or 3 mm.
Specifically, the width of the shade strip 3 is 0.8mm to 2mm, for example, 0.8mm, 1.0mm, 1.2mm, 1.4mm, 1.6mm, 1.8mm, 2.0 mm. Due to the design, the first transparent conductive film forms a partition area in the area shielded by the shielding strip, and the distance from the edge of the cutting surface of the solar cell to the nearest edge of the first transparent conductive film is more than 0.5mm after the substrate device is scribed along the scribing area, so that the first transparent conductive film and the semiconductor substrate layer are effectively electrically isolated. And cutting under the condition that the central line of the second laser cutting process is strictly coincident with the central line of the shielding strip, wherein the minimum distance from the edge of the cutting line to the edge of the first transparent conductive film is at least 0.5 mm. And the region of the portion not covered by the first transparent conductive film is covered with the first doped semiconductor layer.
Specifically, the length of the sunshade strip 3 is 100mm to 250mm, for example, 100mm, 150mm, 158mm, 200mm, 210mm, or 250 mm.
The material of the shade strip 3 includes stainless steel, carbon fiber, aluminum, titanium alloy, graphite, or other alloys and hard materials, such as a composite of stainless steel and carbon fiber.
The respective sunshade strips 3 are parallel to each other. The spacing between the centers of adjacent shutter strips 3 is designed according to the spacing between the centers of the scribe areas of the substrate devices.
Referring to fig. 4, the stent body 2 includes a first annular extension portion 201, a second annular extension portion 202 and an intermediate annular stent portion 203; the middle support part 203 is located between the first extension part 201 and the second extension part 202, the top end of the middle support part 203 is connected with the first extension part 201, the bottom end of the middle support part 203 is connected with the second extension part 202, the inner diameter of the first extension part 201 is larger than the inner diameter of the second extension part 202, specifically, the end part of the first extension part 201 facing the hollow-out opening 2a is connected with one end of the middle support part 203, the end part of the second extension part 202 facing away from the hollow-out opening 2a is connected with the other end of the middle support part 203, and two ends of the shielding strip 3 are fixedly connected with the side wall of the second extension part 202.
It should be noted that the first extension portion 201 surrounds the hollow-out opening 2a, the second extension portion 202 surrounds the hollow-out opening 2a, the middle support portion 203 surrounds the hollow-out opening 2a, a substrate device is suitable for being placed in the hollow-out opening 2a, and the shapes of the first extension portion 201, the second extension portion 202 and the middle support portion 203 are adapted to the shape of the substrate device, for example, the first extension portion 201 is a closed square ring structure, the second extension portion 202 is a closed square ring structure, and the middle support portion 203 is a closed square ring structure.
In the present embodiment, the width of the hollow portion 2a surrounded by the intermediate bracket portion 203 is 100mm to 250mm, for example, 100mm, 150mm, 158mm, 200mm, 210mm, or 250 mm. The length of the hollow-out opening surrounded by the middle support part 203 is 100mm to 250mm, for example, 100mm, 150mm, 158mm, 200mm, 210mm or 250 mm. Preferably, the inner diameter of the middle support part 203 is slightly larger than the width of the substrate device, which is beneficial to the taking and placing of the substrate device.
With continued reference to fig. 4, the bracket is inserted into the opening 1a, and the side wall of the bracket body 2 is disposed opposite to the side wall of the opening 1 a.
The step of inserting the holder into the opening 1a includes: the second extension 202 and the middle bracket 203 are inserted into the opening 1a, and the first extension 201 is located on a portion of the surface of the carrier plate 1 at the side of the opening 1 a.
Referring to fig. 5, the step of disposing the substrate device 4 above the blanking bar 3 includes: the substrate device 4 is placed in the hollowed-out opening 2a and the substrate device 4 is positioned above the shading strip 3.
Specifically, after the bracket is inserted into the opening 1a, the substrate device 4 is placed in the hollow-out 2a, and the substrate device 4 is located above the shielding bar 3, where it should be noted that the height of the top surface of the shielding bar 3 is the same as that of the top surface of the second extension portion 202, and the edge of the substrate device 4 is also placed on the top surface of the second extension portion 202.
The coating process comprises a reactive plasma deposition process (RPD) or a magnetron sputtering coating Process (PVD), and a coating source adopted by the coating process is positioned on one side of the covering strip 3, which is far away from the substrate device 4; a first transparent conductive film 407 is formed on the lower surface of the substrate device 4 by means of a lower plating film.
Because the shielding strip 3 plays a role in supporting and shielding the substrate device 4, on one hand, the sagging degree of the substrate device 4 in the film coating process is weakened, so that the deformation allowance of the substrate device 4 caused by sagging can be not considered in the supporting area of the support body 2 on the substrate device 4; on the other hand, the first transparent conductive film 407 naturally forms a blocking area in the area blocked by the blocking strip, so that after the substrate device is diced along the dicing area, the distance from the edge of the cutting surface to the edge of the nearest first transparent conductive film is more than 0.5mm, and effective electrical isolation between the first transparent conductive film and the semiconductor substrate layer is ensured.
In another embodiment, referring to fig. 8, the carrier board 1 has an opening 1a penetrating through the carrier board 1, the shielding strip 3 is located in the opening 1a, and two ends of the shielding strip 3 are fixedly connected to the side wall of the carrier board 1. The number of the shading strips 3 in the opening 1a is a plurality, the shading strips 3 are distributed at intervals, and the arrangement direction of the shading strips 3 is parallel to the supporting surface of the shading strips 3. The step of placing the substrate device over the blanking bar 3 comprises: the substrate device is placed in the opening 1a with the substrate device positioned above the shutter strips 3. The dimension and material of the sunshade strip 3 refer to the above description and are not described in detail.
Referring to fig. 6, the step of scribing the substrate device 4 along the scribe area includes: a cutting line 5 is defined on the scribe area, the cutting line 5 includes a first cutting line 501, a second cutting line 502 and a third cutting line 503, and the first cutting line 501 and the third cutting line 503 are respectively located on two sides of the second cutting line 502 in the extending direction of the second cutting line 502.
A partial thickness of the substrate device 4 is cut along the first cutting line 501 by a first laser cutting process.
A partial thickness of the substrate device 4 is cut along the third cutting line 503 by a third laser cutting process.
A partial thickness of the substrate device 4 is cut along the second cutting line 502 by a second laser cutting process, the cutting depth along the second cutting line 502 being smaller than the cutting depth along the first cutting line 501 and the cutting depth along the third cutting line 503, respectively.
The step of scribing the substrate device 4 along the scribing region comprises a first laser cutting process, a second laser cutting process and a third laser cutting process, after the first laser cutting process and the third laser cutting process are carried out, an auxiliary slicing notch is formed in the substrate device 4, then the substrate device 4 is cut through the second laser cutting process, the substrate device 4 is cracked along the auxiliary slicing notch under the action of thermal stress, and as the cutting depth of the second laser cutting process is smaller than that of the first laser cutting process and smaller than that of the third laser cutting process, the area of a laser cutting surface is reduced, the area occupied by a fracture surface is increased, and the defects on the surface of the fracture surface are fewer than those on the laser cutting surface, so that the photoelectric conversion efficiency of the solar cell is further improved.
In the present embodiment, the length of the first cutting line 501 is 0.2mm to 0.8mm, for example, 0.2mm, 0.4mm, 0.6mm, or 0.8mm, and the length of the third cutting line 503 is 0.2mm to 0.8mm, for example, 0.2mm, 0.4mm, 0.6mm, or 0.8 mm.
Referring to fig. 7, in the present embodiment, the substrate device 4 includes: the semiconductor substrate layer 401, the first intrinsic semiconductor layer 405 located on one side of the semiconductor substrate layer 401, the first doped semiconductor layer 406 located on one side of the first intrinsic semiconductor layer 405 facing away from the semiconductor substrate layer 401, the first transparent conductive film 407 located on one side of the first doped semiconductor layer 406 facing away from the first intrinsic semiconductor layer 405, the second intrinsic semiconductor layer 402 located on one side of the semiconductor substrate layer 401 facing away from the first intrinsic semiconductor layer 405, the second doped semiconductor layer 403 located on one side of the second intrinsic semiconductor layer 402 facing away from the semiconductor substrate layer 401, and the second transparent conductive film 404 located on one side of the second doped semiconductor layer 403 facing away from the second intrinsic semiconductor layer 402.
In one embodiment, the semiconductor substrate layer 401 comprises an N-type silicon substrate and the first doped semiconductor layer 406 comprises a P-type semiconductor layer. The second doped semiconductor layer 403 includes an N-type semiconductor layer.
Preferably, the substrate device 4 is diced from the side of the first transparent conductive film 407 facing away from the semiconductor substrate layer 401.
In this embodiment, the laser wavelength used in the second laser cutting process is greater than the laser wavelength used in the first laser cutting process and greater than the laser wavelength used in the third laser cutting process.
The cutting depth of the first laser cutting process extends into at least a partial thickness of the semiconductor substrate layer 401; the cutting depth of the third laser cutting process extends at least partially into the semiconductor substrate layer 401.
In the step of scribing the substrate device 4 along the scribing region, the cutting width of the substrate device 4 is smaller than the width of the shielding bar 3, so that the laser beam when scribing the substrate device 4 along the scribing region has a certain distance (at least greater than 0.5mm) from the edge of the first transparent conductive film 407, and thus the first transparent conductive film 407 is not easily conducted with other cut film layers.
The conductivity type of the second doped semiconductor layer 403 is opposite to the conductivity type of the first doped semiconductor layer 406; in order to improve the ability of the solar cell to receive photons, the side of the first transparent conductive film 407 facing away from the semiconductor substrate layer 401 is provided as the back side of the solar cell. The substrate device 4 is diced from the side of the first transparent conductive film 407 opposite to the semiconductor substrate layer 401, so that the damage to the front surface of the solar cell is small, and the photoelectric conversion efficiency of the solar cell is high.
Before dicing the substrate device 4 along the dicing area, the method for manufacturing a solar cell further comprises: a second transparent conductive film 404 is formed on a side of the second doped semiconductor layer 403 facing away from the semiconductor substrate layer 401.
In the method for manufacturing a solar cell according to this embodiment, before scribing the substrate device 4 along the scribe region, the shielding bar is used to shield the first doped semiconductor layer in the scribe region, and the first transparent conductive film is not formed in the region shielded by the shielding bar, so that the first transparent conductive films 407 on adjacent device regions are isolated from each other. Because the width of the shielding strip is greater than the cutting width of the substrate device in the step of scribing the substrate device along the scribing region, a certain distance is reserved between the scribing position when the substrate device is scribed along the scribing region and the edge of the first transparent conductive film, so that the first transparent conductive film 407 is prevented from acting in the process of scribing the substrate device 4 along the scribing region, the material of the first transparent conductive film 407 is prevented from being conducted with the film layer in the substrate device 4, and the photoelectric conversion efficiency of the solar cell is improved. The first transparent conductive film 407 naturally forms a blocking area at the blocking position of the blocking strip, so as to ensure that the distance between the edge of the middle cutting section and the nearest edge of the first transparent conductive film after slicing is greater than 0.5mm, thereby ensuring effective electrical isolation between the first transparent conductive film and the substrate. Secondly, the substrate device 4 is arranged above the shading strip 3, the shading strip 3 is in contact with the first doped semiconductor layer 406 of the scribing region and exposes the first doped semiconductor layer 406 of the device region, and in the process of forming the first transparent conductive film 407, because the substrate device 4 is in close contact with the shading strip 3 under the action of self gravity, the shading strip supports the substrate device, the sagging degree of the substrate device in the film coating process is reduced, and the deformation allowance of the substrate device caused by sagging can be not considered in the supporting area of the support body for the substrate device. Through experimental data acquisition and analysis, the photoelectric conversion efficiency of the solar cell is improved.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A preparation method of a solar cell is characterized by comprising the following steps:
providing a sunshade strip;
providing a substrate device comprising a device region and a scribe region, the substrate device comprising: the semiconductor substrate layer and the first doped semiconductor layer are positioned on one side of the semiconductor substrate layer;
placing the substrate device over the standoff bars, the standoff bars contacting the first doped semiconductor layer of the scribe area, a surface of the first doped semiconductor layer of the device area being exposed;
forming a first transparent conductive film on the surface of the first doped semiconductor layer in the device region by using the shading strip as a mask through a coating process;
after the first transparent conductive film is formed, scribing the substrate device along the scribing region;
the width of the shielding strip is larger than the cutting width of the substrate device in the step of scribing the substrate device along the scribing region.
2. The method of claim 1, wherein the coating process comprises a reactive plasma deposition process or a magnetron sputtering coating process, and the coating process uses a coating source located on a side of the support strip facing away from the substrate device.
3. The method for manufacturing a solar cell according to claim 1, wherein the width of the louver strips is 0.8mm to 2 mm;
preferably, the thickness of the covering strip is 0.4 mm-3 mm;
preferably, the length of the shading strip is 100 mm-250 mm;
preferably, the material of the shade strip includes stainless steel, carbon fiber, aluminum, titanium alloy, or graphite.
4. The method for manufacturing a solar cell according to claim 1, wherein the shading strip is a part of a bracket, the bracket further comprises a bracket body, and the bracket body is provided with a hollow-out opening penetrating through the bracket body; the covering bar is fixedly connected with the side wall of the bracket body and is positioned in the hollow opening;
the preparation method of the solar cell further comprises the following steps: providing a carrier plate, wherein the carrier plate is provided with an opening penetrating through the carrier plate; inserting the bracket into the opening, wherein the side wall of the bracket body is opposite to the side wall of the opening;
the step of placing the substrate device over the blanking bar comprises: placing the substrate device in the hollowed-out opening and enabling the substrate device to be located above the covering strip;
preferably, after the bracket is inserted into the opening, the substrate device is placed in the hollow and is located above the shading strip.
5. The method according to claim 4, wherein the frame body comprises a first annular extension portion, a second annular extension portion, and an intermediate annular frame portion; the middle support part is positioned between the first extension part and the second extension part, the top end of the middle support part is connected with the first extension part, the bottom end of the middle support part is connected with the second extension part, the inner diameter of the first extension part is larger than that of the second extension part, and two ends of the shielding strip are fixedly connected with the side wall of the second extension part;
the step of inserting the stent into the opening comprises: embedding the second extension part and the middle bracket part into the opening, wherein the first extension part is positioned on the surface of part of the carrier plate at the side part of the opening;
preferably, the width of the hollow-out opening surrounded by the middle support part is 100 mm-250 mm, and the length of the hollow-out opening surrounded by the middle support part is 100 mm-250 mm.
6. The method for manufacturing a solar cell according to claim 1, further comprising:
providing a carrier plate, wherein the carrier plate is provided with an opening penetrating through the carrier plate, the covering strip is positioned in the opening, and two ends of the covering strip are fixedly connected with the side wall of the carrier plate;
the step of placing the substrate device over the blanking bar comprises: the substrate device is placed in the opening with the substrate device over the blanking bars.
7. The method according to claim 1, wherein the number of the light shielding bars is several, the light shielding bars are distributed at intervals, and the arrangement direction of the light shielding bars is parallel to the supporting surface of the light shielding bars.
8. The method of any of claims 1-7, wherein the substrate device further comprises: the second doped semiconductor layer is positioned on the other side of the semiconductor substrate layer, and the conductivity type of the second doped semiconductor layer is opposite to that of the first doped semiconductor layer;
before dicing the substrate device along the dicing area, the method for manufacturing a solar cell further comprises: and forming a second transparent conductive film on one side of the second doped semiconductor layer, which faces away from the semiconductor substrate layer.
9. The method of any of claims 1-7, wherein the step of dicing the substrate device along the scribe area comprises:
defining cutting lines on the scribing area, wherein the cutting lines comprise a first cutting line, a second cutting line and a third cutting line, and the first cutting line and the third cutting line are respectively positioned at two sides of the second cutting line in the extending direction of the second cutting line;
cutting a portion of the thickness of the substrate device along the first cut line by a first laser cutting process;
cutting a partial thickness of the substrate device along the third cutting line by a third laser cutting process;
cutting a partial thickness of the substrate device along the second cutting line by a second laser cutting process, the cutting depth along the second cutting line being less than the cutting depth along the first cutting line and the cutting depth along the third cutting line, respectively;
preferably, the length of the first cutting line is 0.2 mm-0.8 mm, and the length of the third cutting line is 0.2 mm-0.8 mm;
preferably, the laser wavelength adopted by the second laser cutting process is greater than the laser wavelength adopted by the first laser cutting process and greater than the laser wavelength adopted by the third laser cutting process;
preferably, the cutting depth of the first laser cutting process extends into at least a partial thickness of the semiconductor substrate layer; the cutting depth of the third laser cutting process extends into at least a partial thickness of the semiconductor substrate layer.
10. The method for manufacturing a solar cell according to any one of claims 1 to 7, wherein the conductivity type of the first doped semiconductor layer is opposite to the conductivity type of the semiconductor substrate layer; and scribing the substrate device from the side of the first transparent conductive film, which faces away from the semiconductor substrate layer.
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| Publication number | Priority date | Publication date | Assignee | Title |
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