WO2020005251A1

WO2020005251A1 - Swing apparatus, method for processing a substrate, swing module for receiving a substrate from a transfer chamber, and vacuum processing system

Info

Publication number: WO2020005251A1
Application number: PCT/US2018/040004
Authority: WO
Inventors: Kyung-Tae Kim; Lokesha REDDY; Sasikumar SHANMUGAM; Aki HOSOKAWA
Original assignee: Applied Materials, Inc.
Priority date: 2018-06-28
Filing date: 2018-06-28
Publication date: 2020-01-02
Also published as: CN112313784A; KR102444086B1; KR20210013643A

Abstract

A swing apparatus for moving a substrate relative to one or more deposition sources having a longitudinal axis is described. The swing apparatus includes a support body for holding the substrate; a rotation mechanism coupled to the support body for moving the substrate by an angle around a rotational axis to vary the substrate orientation from a transfer or horizontal orientation to a processing or vertical orientation at a processing area; and a linear motion mechanism coupled to the support body for translating the substrate relative to the longitudinal axis of the deposition source, when the substrate is in the processing orientation.

Description

SWING APPARATUS, M ETHOD FOR PROCESSING 4 SUBSTRATE, SWI G MODULE FOR RECEIVI NG A SUBSTRATE FROM A TR ANSFER CHAMBER,

AN D VACU U M PROCESSING SYSTEM

FIELD

[0001] Embodiments of the present disclosure relate to swin apparatuses and modules for moving a substrate relative to one or more deposition sources. Further, the embodiments of the present disclosure relate to methods for processing a substrate and to vacuum processing systems.

B CKG OUND

[0002] Several methods are known for depositing a materia! on a substrate. For example, substrates may be coated by using an evaporation process, a physical vapor deposition (;PVO) process, such as a sputering process, a spraying process, etc,, or a chemical vapor deposition (CVD) process. The process can be performed in. a processing chamber of a deposition apparatus where the substrate to be coated is located, A deposition material is provided in the processing chamber. The sputter deposition process can be used to deposit a material layer on the substrate, for example a layer of insulating material. This involves ejecting material from a target onto a. substrate. The target material to be deposited on the substate is bombarded with inn* generated in a l sma egion o dislodge atoms of the target material :from a surface of the target. The dislodged atoms con form the material layer on the substrate, In a reactive sputter de osition process.; the dislodged atoms can react with a gas in the plasma region, for example nitrogen or oxygen, to for so oxide, a nitride or an oxynitride of the target material on the substrate. Further, other processes like etching, structuring, annealing, or the like can be conducted In processing chambers.

|00031 For example, coating processes may be considered for large area substrates, e.g. in display manufacturing technology. Coated substrates can be used in several applications and in several technical fields. For Instance, applications may include insulating anels,

I microelectronics, such as semiconductor devices, substrates with thin film transistors (TFTs), color filters, or the like.

[0004] The_· tendency towards larger substrates with more complex and thinner coatings results m larger process modules. Vertical process modules connected in. series may have some drawbacks due to the footprint, redundancy and costs. For coating of large area substrates, the glass can be aligned with a mask to avoi Coating on the glass edge and/or on the back side and to seal the process mom from a glass handle area. Clamps hold the substrate on the edges of the substrate daring the process. This may lead to issues with particles and uniformity due to glass mask alignments (shadowing effect), and side deposition on the clamps. Further, the deposition of particles generated in the processing chamber outside the target substrate on components of the process modules, for example on moving mechanical elements, could negatively affect the performance and therefore the reliability of said elements.

[OOΌ5] in view of the above, there h a need for apparatuses, modules, methods and systems, which can provide for an improved uniformity of the deposited layer as well as for a. reduction of particle generation in or close to the processing chamber,

SUMMARY

[000b] A swing apparatus, a method for processing a substrate, swing module for receiving a substrate from a transfer chamber, and vacuum processing system are· provided. Further f atures, details, aspects and modifications can be derived from the dependent claims, the specification arid the drawings.

{0007] According to one embodiment, a swing apparatus for moving a substrate relative to one or more deposition sources having a longitudinal axis k provided, The swing apparatus includes a support body for holding the substrate; a rotation mechanism coupled to the support body for moving the substrate by an angle around a rotational axis to: vary the substrate orientation from a transfer or horizon al orientation to a processing or vertical orientation at a processing area; and a linear motion mechanism coupled to the suppor body for translating the substrate relative to the longitudinal axis of the deposition source when the substrate is in the processing orientation. [0008] According to another embodiment, a method for processing_: a substrate is provided. The method includes holding the substrate on a support body; moving the substrate relative to a depo ition source for processing the substrate having a longitudinal axis, the movement of the substrate being carried out by an angle around a rotational axis to vary the substrate orientation fro a transfer or horizontal orientation to a processing or vertical orientation by a rotation mechanism coupled to the support body; processing a surface of the substrate with the deposition source; and translating the substrate relative to the longitudinal axis of the deposition source, when the substrate is in the processing orientation by a linear motion mechanism coupled to the support body.

[0009] According to another embodiments, a swing module for receiving a substrate from a transfer chamber of a vacuum processing system and for positioning said substrate in a processing area of a processing chamber of the- vacuum processing system is provided. The swing module include a vacuum chamber, a support body for holding the substrate within the vacuum chamber; a rotation mechanism coupled to the support body for moving foe substrate by an angle around a rotational axis to vary the substrate orientation from a tra fer or horizontal orientation to a processing or vertical orientation; and a linear motion mechanism coupled to foe support body for translating the substrate sideways in relation to the longitudinal axis of foe deposition source when the substra e is in foe processing orientation.

[0010] According to another embodiment, a vacuum processing system for processing a substrate is provided. The system includes at least a processing chamber including a deposition source with a longitudinal axis for processing the substrate; at least a swing module, operartveiy coupled to the processing chamber, for positioning the substrate in a r cessing area of the processing chamber; and a transfer chamber operatively coupled to the swing module, for moving the: substrate to the swing module. The swing_. odule includes a vacuum chamber; a support body for holding the substrate within the vacuum chamber; a rotation mechanism coupled to the support body for moving the substrate by an angle «round a relational axis to vary the substrate orientation front a transfer or horizontal orientation to a processing or vertical orientations and a linear motion mechanism coupled to the support body for translating the substrate side-ways in relation to the longitudinal axis of fee deposition source, when the substrate is in the processing orientation_:.

BRIEF DES RIPTION OF THE DRAWINGS

[001 1 ] So that the manner tn which the above recited features of fee present disclosure can be understood in detail* a more particular description of the disclosure, briefly summarised above, ay be bad by reference to embodiments. The accompanying drawings relate to embodiments of the disclosure and e e described In the fallowing;

FIG, 1 shows a schematic view of a swing apparatus for moving a substrate relative to a deposition source:

FIG- 2A shows a schematic upper view of the swing apparatus of FIG. 1 ^>

FIG, 28 shows a schematic rear view of the s wing apparatus of FIG, 1 ;

FIG. 2€ shows an exploded schematic view of the swing apparatus;

PIG, 3 shows a schematic view of a swing module including a swing apparatus;

FIG, 4 shows a schematic side view of a vacuum processing system;

FIG, 5 shows a schematic upper view of a vacuum processing system; and

FIG, 6 shows a Hove diagram of a method for processing a substrate.

IϊETAII» 0ESCRf O OF EMBODIMENTS

[0012] Reference will now be made ip detail to the various embodiments of Ale disclosure, one or more exa les of winch are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to same components. Only the differences with respect to Individual embodiments are described. Each example is provided by way of explanation of the disclosure and is not meant as a limitation of the disclosure, farther, features illustrated or described as part of one embodiment can be used on, or in conjunction with, other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations,

[0013] Unless specified otherwise, the description of a past or aspect in one embodiment applies to a corresponding part or aspect in another embodiment as well,

[0014] The embodimentsdescribed herein can be utilized for inspecting large area coated substrates, e.g., for manufe ured displays. The substrates or substrate receiving areas for which She apparatuses and methods described herein are configured can be large area substrates having a size of e.g. I o or above for example, a large area substrate or carrier can be GEN 4.5, which corresponds to about 0.67 of substrates (0.73x0.92m),. GEM 5, which corresponds to about 1.4 nf substrates (1.1 m 1.3 m), GEN 7.5, which corresponds to about 4.29 nr substrates (1.95 m x 2.2 ns), GEM S.,5, which corresponds to about 5.7nf substrafes (2.2 tn x 2,5 ), or even GEM 10, which corresponds to about ^"8.7 m* substrates (2.85 m x 3.05 m). Even larger generations such as GEN 1 1 and GEM 12 ari corresponding subshafe areas cast similarly be implemented. For example, for OLED display manufacturing, half sizes of the above mentioned substrate generations, including GEM 6, can be coated by evaporation of an apparatus for evaporating material. The half sixes of the substrate generates may result from some processes running on a full substrate size and subsequent processes running on half of a substrate previously processed,

[0015] The term “substrate” as used herein ay particularly embrace substantiallyinflexible substrates, e.g., a wafer, slices of transparent crystal such as sapphire or the like, or a glass plate, JHd ever, the present disclosure is not limited thereto and the term “substrate” may embrace flexible substrates such as a web or a fell. According to embodiments, which eah bd combined with any other embodiments described herein, the substrate can l& matfe from any material suitable for material deposition. For instance, the substrate can be ade frous a material selected from the group consisting of glass, such as sodadime glass o borasi!ieafe glass, metal, polymer, ceramic, compound materials, carbon fiber material, mica or any other material or combination of material capable of being coated by a deposition process. For example a thickness of foe substrate in a direction perpendicular to the math surface of the substrate can be within a range g»m 0.1 mm to 1,8 mm, such as 0.7 mm, 0.5 mm, or 0.3 mm. In some embodiments, the thickness of the substrate may be SO pm or more. The thickness of the substrate can be 900 m«» or less.

[0016] FIG. 1 shows a schematic side view of a swing apparatus 10 according to an embodiment of the present disclosure. The swing apparatus SO is used for moving a substrate 20 relative to a deposition source 30. The deposition source 30 has a longitudinal axis 31 and is intended for processing the substrate 20, in particular for processing one surface of the substrate 20, he. the front surface. According to some embodiments, one or more vertically oriented sputer sources may be provided. According to some embodiments of the present disclosure, which can be combined with other embodiments described herein, a deposition source may be a line source. For example, one or more rotatable sputter cathodes can be provided. A rotatable sputter cathode may have a cylindrical target, such as a target of the material to be deposited. Two or more sputer cathodes may form an army. An array of rotational cathodes may generate a ripple for the coated material layer,

[0017] The swing apparatus 30 includes a support body 40 for holding the substrate 20. For example, the back surface of the substrate 20, opposite to the front surface, treated by the deposition source 30, is in contact with the support body 40. The swing apparatus 10 further includes a rotation mechanism 42 coupled to the support body 40 for moving the substrate 20 by an angle 12 around a rotational axis 44 from a transfer or horizontal orientation I to a processing or vertical orientation il at a processing area, in addition, the swing apparatus Id includes a linear motion mechanism 46 coupled to the support body 40 for translating the substrate 20 sideways relative to the longitudinal axis 31 of the deposition source 30, when the substrate 20 is n the processing orientation 11 (better described in FIG. 2A and 2B). 0018] The movement of the support body 40 can be described by a rotation around a joint 43 arranged at the rotation mechanism 42, wherein the joint 43 forms an axis 44 of rotation. The movement of the support body 40 cats also be understood as a folding up or a flap up movement. The. dashed contours 10' in FIG. i show the support body 40 being moved around the angle 12, e.g, about 90 degrees, from a transfer or horizontal orientation I to a processing or vertical orientation it. With the term“transfer orientation'^* is intended to describe an orientation, wherein the front surface of substrate 20 is directed upwards so that the substrate 20 ears easily be transferred to or from an ther chamber With the term “processing orientation” is intended to describe an orientation, wherein the front surface of the substrata 2.0 faces the deposition source 30 so that target material can be deposited on the substrate 20. The arrows 32 in PIG. 1 show the direction of the ejected material or ions from the source.

[0019] The substrate 20 is moved by angle 12, e.g. by a rotation about an axis 44, into a processing area 72. The movement of the substrate 20 by an angle 12 into a processin area 7 can be described as including an angular displacement In embodiments, the movement of the substrate 20 by an angle 12 can include a translation motion. For example, the axis of rotation can he offset to an edge of the substrate providing fee a translational movement during movement: of the substrate fey the angle, The axis of rotation may additionally be displaced, m particular towards the processing area 72 A support body 40 configured to move the substrate 20 by an angle 12 cars be understood as a rotatable mounted support body 40 configured at least to relate or swing aa nd an axis 44, e.g. around a joint 43 to change the orientation of the substrate surface being attached to the support body 40.

[0020] According to embodiments, which can be combined with other embodiments described herein, the support body 40 is configured to move the substrate 20 from a non- vertical orientation I to a non-horizontal orientation II. A non-vertical orientation I can be understood particularly when referring to the substrate 20 orientation, to allow for a deviation from the horizontal direction or orientation of s-7- 20 degrees or below, e.g. */- 10 degrees below. Likewise, a non-horizpntal orientation 11 can be understood: to allow for a deviation fro the vertical direction or orientation of +/- 20 degrees or below, e.g. 4/- 10 degrees below, A deviation from a vertical orientation II of a substrate support might result in a more stable substrate orientation, e,g. during a substrate processing, in particular during layer deposition process. Furthermore, it can be benefiei&l to have a deviation of a: hori¾00ial orientation i of the sub trate to i ellitato the transport and/or the alignment of the substrate 20 in particular before moving ^:the substrate 20 in a processing area 72.

[0021] FIG. 2A and 2S show the swing apparatus of FIG. I according to an upper view and a rear view, respectively. It Is noted that the support body 40 and therefore the substrate 20 can be translated sideways relative to the deposition source 30 and specificallyrelative to the longitudinal axis 31 of said deposition source 30, The double arrows 14 of the figures indicate that the support body 40 can translate on the right side and on the left side of the deposition source 30. The sideways translation is carried out when the substrate 20 is in the processing orientation II, is. when the front surface of the substrate 20 faces the deposition source 30. in particular, the movement is made possible by the actuation of the linear motion mechanis 46 that is coupled to the support body 40 and is located below the rotation mechanism 42, 0022] The sideways movement of the substrate 20 relative to the deposition source 30 allows for an improved uniformity of the deposited layer, For example, a ripple of a deposition source array may be removed by the movement of the substrate in a direction perpendicular to the axes of the deposition sources, e,g, line sources. This may be confirmed by several .measurement techniques, like microwave hotoconductivity decay measurements (uPCD) or X-ray methods- For example, the pPCD can he an indicator fo single layer uniformity tuning.

[0023] The movement of t he substrate 20 by an angie 12 into a processing area 72 can be described as a substantially angular displacement In embodiments, the movement of the substrate 20 by an angle 12 can hays a portion of & translation motion, Whh reference to FIG, L the support body 40 can be moved b a translation movement aligned with a horizontal direction and b an angle 12 about an axis of rotation towards the processing area 72, In other words, the support body 40 is configured to move the substrate 20 in a horizontal linear direction perpendicular to the iongitudfoal axis 31 of the deposition source 30 during the movement from foe transfer orientation I to the processing orientation II snd vice versa, and providing a linear offset 48 between the- edge of the substrate 20 facing to the processing area 72 and the longitudinal axis 31 Of the deposition -spares 31b

[0024] As shown In FIG, 1 and FIG. 2B, the rotation mechanism 42 is located above the linear motion mechanism 46, In particular, the rotation mechanism. 42 is supported by the linear motion mechanism 46, This leads lo the advantage of positioning the moving_: parts of the mechanical rotational and translational mechanisms is a more compact and limited area of the swi g apparatus 10-

[0025] According to embodiments, which can he combined with any other embodiments described herein, foe swing appa atus 10 includes a protection unit 50 for reducing particles produced by the deposition source 30 within the processing area. The protection unit SO can be a single element protecting, he, screening off, the moving parts of the rotation mechanism 42 and/or of the linear motion mechanism 46 or can he a combination of two or more elements, each protecting a different part of these moving parts in this way, particle generation in or close to the processing area 72 is reduced or entering of generated particles in the processing area can be reduced,

[0026] For example, the protection unit 50 can include at least a bellows element. The rotation mechanism 42 can include at least a rotating shaft 47 boated Inside said bellows element. The bellows can have the form of rod tubes or flexible tubes enveloping and covering the rotating shaft 47 of the rotation mechanism 42.

[0027] According to embodiments, which can be combined with my other embodiments described herein, the protection unit 50 can include at least a farther or second bellows element and the linear motion mechanism 46 can include linear guides 49 located inside said further or second bellows element The linear guides 49, schematically shown for example in FIG. 3, serve to provide the tmnsialieoai movements of the substrate 20 sideways ta relation to the deposition source 30. In this way, the one or more bellows can have the form of rod tabes or flexible tubes enveloping and covering the linear guides 49 of the linear motion mechanism 4(1. The bellows can cover and therefore protect other parts of the linear motion mechanism 46, such as linear actuators coupled to the linear guides 49, .Due to the fact that the ration mechanism 42 is supported by the linear motion mechanism 46, a single bellows element can be configured to p otect both the rotating shall 47 sard the linea guides 49, Alternatively, two separated bellows can be used to protect the rotating shaft 47 of the rotatioh mechanism 42 end the li near guides 49 of the linear motion mechanism 46.

[0028] According to embodiments, a support body 40 can be understood as an a rangement configured to hold a substrate 20. For instance, the support body 40 can be a rigid body, such a a frame or a plate. In particular, the support body 40 can be configured to support a surlitee of a substrate 20, such as the back surface of a substrate 20.

(0029} According to embodiments, which can be combined with any other embodiments: described herein, the support body 40 Includes a susceptor for heating the substrate 20, In particular, the support body 40 can include a heated plate in direct contact with the substrate 20, i.e. the back surface of the substrate 20. The heating can occur during the deposition process of the target material in the processing area 72

[00301 In the present disclosure, clamping elements can be understood as a holding arrangement configured to provide a fixing force for attaching the substrate 20 described therein, in particular, the substrate 20 can be held to the -support body 40 through clamps at the edges ,

[00311 FIG. 2C describes the swing apparatus iO showing components in an exploded view. For example, the rotation mechanism 42 includes at least two spline shaft connection elements 421 ami at least two rotation motors 422 in order to move the substrate 20 (i.e. the support body 40) by an angle from the horizontal to the vertical orientation. The swing apparatus 10 includes two tubular bellows 52 that symmetrically cover the left and the right part of the rotating shaft 47 of the rotation mechanism 42. Below the rotating shaft 47 is located the linear motion mechanism 46 with linear guides 49, which can additionally be covered by the bellows 52. The swing apparatus can further melude a vetttosl frame 22 located at the processing area 72. When the support body 40 is rotated and is held in the vertical orientation, the substrate 20 is positioned at the processing area 72 and is ready for the deposition process,

[0032] According to embodiments, before the substrate 20 is arranged on the support body 40, the substrate 20 can be aligned with the support body 40. The alignment can be for example earned out by s transport frame, wherein the transport frame transports the substrate 20 being in a ftbrisuntai orientation above the support body 49, A pin array can be provided to position the substrate 2b on the support body 4(3 in an aligned or centered manner. The substrate 20 ca also be aligned by simple pushers before: the substrate 2Q is put on the support body 40 and attached by the clamps.

[0033] Afer a!igmneni, the substrate 20 can he attached or clamped on the support body 40, for example in a horizontal orientation. The support body 40 cast subsequently be ositione in a vertical direction. Doe Rs the gravity forces upon change of orientation, a- substrate 20 may undergo sagging. According to some embodiments of the present disclosure, which can be combined with other embodiments described herein, a ps at the edges may be provided to allow for a combination of reduced sagging and easy release of the substrate 20 from the support body 40 after processing

[0034] In the present disclosure, as regards the rotation mechanism 42, at least an actuator is provided for moving the support body 40 amuad an axis 44. The actuator can be understood as a rotation motor or an extendable cylinder, for example, a hydraulic, pneumatic, mechanical or electric driven cylinder configured to move a support body 40 aroand an axis 44 in front of the processing station. An actuator can also be understood as a linear actuator with a rack and pinion system. An axis, in particular an axis of rotation can be configured as a pivot, a swivel, swing or a rotating joint. The axis may include an actuator, for example having a motor and a gear. The axis can be directly driven. A -motor and/or a gear can be provided. An actuator can be self-driven or a rotatable mounted rod. The actuator can be fixed to the support body 40 and/or the axis, 0035] In the present disclosure, as regards the linear motion mechanism 46, at least an actuator is provided for translating the support body 40, and therefore the substrate 20, sideways in relation to the longitudinal axis 3 Ϊ of the deposition source 30. For example, the actuator can he understood as a linear actuator with a rack an pinion system. The actuator can be a rod-style actuator that can either be fluid owered, such as hydraulic of pneumatic, or electric powered, by a lead screw or bail screw. Alternatively, the actuator can be a. rodless actuator that can either be fluid powered or electric powered via a lead screw, hall screw, belt or linear motor. Both styles of actuators find application in guided systems- The guide- elements can be profited rail, round mil or other .rolling or sliding systems.

[0036] FIGS, 3 and 4 describe a swing module 60 lor receiving a substrate 20 from a transfer chamber 80 of a vacuum processing system nd forpositioning said substrate 20 in o processing area 22 of & prttoessmg chamber 20 of toe vacuum processing system, The swing module 60 includes a vacuum chamber 62 and a support body 40 for holding the substrate 20 locate within the vacuum chamber 62. A rotation mechanism 42, coupled to the support body 40, is used .for moving the substrate 20 by an angle 12 around a mtafinnai axis 44 from a transfer or horizontal orientation Mo ¾ processing or vertical orientation 1.1 PIG. 3 shows the substrate in the transfer orientation I, A linear motion mechanism. 46, Coupled to the support body 40, is used for translating the substrate 20 sideways relative: to p the longitudinal axis 31 of the deposition source 30, when the substrate 20 Is in the processing orientation II. In order to carry out the translational movement of the substrate as mentioned above, the linear motion mechanism 46 is provided with a linear actuator coupled to linear guides 49, which are located below the rotation mechanism 42. Furthermore, a protection unit $0 is provided for protecting both the rotation mechanism 42 and the linear motion mechanism 46 from the particles generated by the deposition source 30.

[0037] FIG. 4, shows an exemplary vacuum processing system 90 including at least a processing chamber 70, at least a swing module 60 operatively coupled to the processing chamber 70 for positioning the substrate 20 in a processing area 72 of the processing chamber 78 and at .least a transfer chamber SO operatively coupled to the swing module 60, for moving the substrate 20 to the Swing module 60. in particular, the swin module 60 includes a vacuum chamber 62 and a support body 40 for holding the substrate 20 within the vacuum chamber 62, Further, the swing module 60 includes a rotation mechanism 42 coupled to the support body 40 for moving the substrate 20 by an angle 12 around a rotational axis 44 from a transfer or horizontal orientation I to a processing or vertical orientation II. Furthermore, the swing module 60 includes a linear motion mechanism 46 coupled to the support body 40 for translating the substrate 20 sideways In relation to the longitudinal axis 31 of the deposition source 30, when the substrate 20 is in the p oces ing orientation P.

[0038] The vacuum chamber 62 of the swing module 69 as well as the transfer chamber 80 can be provided with stands 64. The swing module 60 can Include Or cart be eonneetedo the processing chamber 76 lhatean be provided with support pillars 74

[0039] According to embodiments, which can be combined with ether embodiments described herein, as illustrated in FIG, 5_S the vacuum p ocessing; system 90 can include a vacuum transfer chamber 80 wherein ore than one, in particular two or more swing modules 60A, 60B, 68G, and 60D are arranged adjacent to the vacuum transfer chamber 80. A substrate 30 (shown with dashed lines in the figure) is transferred to the vacuum transfer chamber SO e.g, through a load chamber or load module 92. The vacuum transfer chamber SO can mo ve the substrate 20 to a Vacuum chamber of a first swing module 60A, The vacuum processing system 90 can include a support chamber arranged on the vacuum transfe chamber 80 to perform specific additional functions like storage of substrates of the like. Further, more then one load lock chamber may be provided. For example, one load lock chamber may be provided for loading of substrates into the transfer chamber and one load lock chamber may be provided for unloading substrates from the transfer chamber.

[0040] The substrate 20 can be arranged or attached on the support body 40 by clamps in the vacuum chamber of the first swing module 60A. The support: body 40 moves the substrate 20 by an angle 12 from a non-vertical orienlarioo 1 to a non-hor ontal orientation it In a processing area of the processing chamber 70A in front of a mask (not show) as described therein. After the processing of the substrate 20 in the processing area of the processing chamber ?0A, the substrate 20 is moved out of the processing area in a now vertical orientation I into the vacuum chamber of the first swing module 60A. The substrate 20 :is moved out of the vacuum chamber of the swing module 60A back to the transfer chamber 80. After obtaining the substrate 20 from the vacuum chamber of the swing module 60A, the transfer chamber 80 can move the substrate 20 to a further swing module 60B orfiOC or 00D with further processing chambers ?0B_* ?0G, 700, respectively.

£0041 | According to embodiments, the movement of the substrate 20 fro a swing module 60A to a further swing module 60B, 60C, 60D can be understood as a lateral movement of the substrate 20, wherein the substrate 20 is move while being in s no»- vertical orientation 1 The transfer chamber 80 can be configured to rotate die substrate 20 e,g, t enable an alignment of the substrate 20 before moving the substrate 20 to a process chamber. The substrate 20 can be moved by the transfer chamber 80 from the vacuu chamber of a first swing module 60A to any other vacuum chamber of the swing m dule 60S , 60€, 60 arranged on the transfer chamber SO in an undetermined equence.

[0042] According to embodiments, the vacuum processing system 90 can include- more than one load module 92, transfer c amber S0, s ing module 60 or processing chamber 70,

[0043] A load module 92 can be understood as a module capable for an intake or an acceptance of a substrate 20 and/or for outtake or removal of a substrate. The load module 92 or load lock chamber can be a chamber with an opening at one side being configured to receive a substrate 20. The load module 92 can be connected to a transporting device being configured to transport a substrate 20 to the load module 92. For example, & load module 92 can fee understood as an air lock for transferring a substrate 20 to a chamber with low pressure, in particular to a chamber with vacuum pressure. According to embodiments, the load module is connected to a transfer chamber SO.

[0044] A transfer chamber SO can be understood as a chamber with vacuum pressure connected to other substrate processing modules, chambers or devices (fee. swing modules 60, toad modules 92), The transfer chamber 80 can he configured to move a substrate 20 to other modules or devices connected to the transfer chamber 80 for feather substrate processing

[0045] According to embodiments, more than one swing module 60 is arranged at: the transfer chamber SO, In particular at the outer wail of the transfer chamber 80, The transfer chamber 80 can form a transporting path configuration between the s wing modules 60.

[0046] The transfer chamber 80 can he understood as a transporting path configuration, wherein several swing modules 60 A, 608, 60C, and 601> and corresponding processing chambers 70A, 70B, 70C, and ?0D are arranged at the lateral areas of the transporting pash configuration. Each swing module or processing chamber can be connected to the transporting path configuration for example by an opening or by an air-lock.

[0047] According to embodiments, the vacuum processing system 90 can include more than one swing modules 60 and processing chambers 70 arranged next to each other. In a first swing module 60A, an actuator moves a support body 40 around an. axis 44 Info a processing area 72A of a first processing chamber 70A as described herein. For further processing, the substrate 20 can be moved to further swing modules 60B_» 6Q€, 6017 and processing chambers 768. 70C, ?0P, wherein the substrate 20 is moved in a non-vertical orientation I from one swing module 60 to another swing module 60.

[0040] According to embodiments, the transfer chamber 80 can. have a polygon-shaped, ie, can be polygonal, or circular design, A polygon-design can for example include a triangu!um-shaped, a square-shaped, a pentagon-shaped or hexagon-shaped design, A swing module 60 can be arranged cm one edge or on more edges or on each edge of the polygon-shaped designs of the t&nsfer chamber SO. When more than one swing module 60 is provided, the transfer chamber 80 can be arranged in the middle or in the centeriof the swing modules. The arrangement of the transfer chamber 80 in the center or in the middle of the swing modules 60 enables a cluster-like design of a vacuum processing system 90, More than one swing modules 60 and corresponding processing chambers 70 can be arranged on the transfer chamber 80, wherein each module/chamber has the same distance from a center point of the transfer chamber 80, It is further possible to arrange storage modules for substrates or any other substrate support modules at one or more edges of the polygon-shaped design transfer chamber 80.

[0049] According to embodiments, it is possible to connect two or more cluster-like vacuum processing systems 90 as described herein and enable substrate transporting and further substrate processing between the two or more vacuum processing systems 90.

[0050] According to embodiments, the transfer chamber 80 is configured to transfer the substrate 20 being attached to the support body 40 to the swing module 60. The substrate 2(5 being attached cars be understood as the substrate is kept attached and/or is held by the clamps on the support body 40 while transported within the swing module 60 in the processing area 72. The movement of the substrate 20 can be understood as a displacement in a horizontal direction. The displacement can be carried out by a guiding system with rollers or the like. Keeping the substrate 20 attached to the support body 40 has the advantage that farther attaching and detaching operations of the substrate 20 with the clamps of the support body 40 can be avoided when the substrate 20 enters a swing module 60 and approaches the processing area and/or enters the transfer chamber 80 again after processing. Keeping the substrate 20 attached to the support body 40 cart accelerate the substrate processing process.

[0051 ] According to embodiments, which may be combined with other embodiments described herein, the processing chamber 70 includes one or more deposition source 30 having a longitudinal axis 31. For example, an array of 4 or more linear deposition sources, such as rotational spotter cathodes, may be provided.

[0052) Further a processing chamber may also include an implantation source, such a.s a vertical linear implantation source The term“linear” for example, for deposition sources or implantation sources, can be understood m the sense that the source has a major dimension and a minor dimension defining an emission area of the psrtictes or ions (e.g., a substantially rectangular area), wherein the minor dimension is less than t e major dimension. For example, the minor dimension can he less than 10%, specifically less than 5% and om specifically less than 1% of the major dimension. The major dimension can extend substantially vertically. In. other words_* the at least one linear source can be a vertical linear source. According to some embodiments, a beam width of the particles or ions provided by the at least one linear source, e.g., the emission area, can be in a range of between 1 mm to 300 mm, specifically in a range of between 10 mm to 100 mm, and more specifically less than $0 mm, The beam width can be defined perpendicular to the linear extension of the at least one linear source.

[0053] Generally, in embodiments, the linear source being an on snare» may be configured for a pretreairoent, a cleaning process for the surface of the substrate 20, m son implantation into the substrate 20 or into a layer which was previously deposited on the substrate 20, or a deposition of a layer on the substrate 20. in embodiments, the linear source ros be configured for a cleaning or a pre- treatment of a substrate 20, which may for example include the removal of TiO,

[0054] Qeneraiiy, a width of the processing chamber 70 in a dimension parallel to the substrate can be significantly greater than the width of the substrate 20 in a horizontal direction perpendicular to the substrate, it is understood that a processing chamber 70 with a deposition source 30 and & large width can be employed in other configurations, as well* for example in an apparatus having two or more such processing_: chambers with deposition sources 30. An extended width of the processing ehamber 70 allows- o move the substrate 20 along the deposition source 30 while enabling that any section of the substrate surface is effected by the beam 32 oFthe deposition source 30 during: the -process,

[0055] The eposidofi source 30 cap hc configured as a sputter source or as a PLD source (pulsed laser deposition), in Poised l se deposition (PLD), a h-powem pulsed laser beam is focused inside the vacuu chamber to strike a target of the material that is to be deposited. Tbd material is ablated or va rized from the target,- and the resulting plasma plumb deposits as a thin film on the substrate 20. For sputter deposition, typically a magnetron sputtering source may be provided, for example having a cylindrical target with permanent roagttets provided ithin the target Cylinder. [0056] With exemplary reference to PIG. 6, embodiments of the: method 100 lor processing a substrate 20 me provided. The method i 00 includes holding 102 the substrate 20 on a support body 40 of & swing apparatus 10, mewing 104 the substrate 20 relative to a deposition scarce 30 for processing fee substrate 20 having a longitudinal axis 31 by ah angle 12 amend a rotational axis 44 from a transfer or .horizontal orientation I to a processing or vertical orientation 0 by means of a rotation mechanism 42 coupled to the support body 40 and treating or processing 106 fee surface of fee substrate 20 by a beam from the deposition source 30. In addition, the method 100 includes translating 108 the substrafe 20 sideways in relation to fee longitudinal axis 31 of the deposition source 30, when the substrate 20 is in fee processing orientation 11 by meads of a linear motion mechanism 46 coupled to fee support body 40.

[00571: Furthermore, the method includes moving the substrate 20 in a horizontal linear direction perpendicular to the longitudihal axis 31 of the deposition source 30 during the movement from the transfer orientation 1 to the processing orientation II and vice versa, iO()58] The embodiments according to fee .present disclosure have several advantages including the possibility to improve the uniformity of the deposited layer- Furthermore, the emhodiaieafe according to the present disclosure have the advantage of reducing particle generation In or close to the processing chamber-

[0059] While the foregoing is directed to embodiments of the disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by fee claims that follow.

Claims

1. A swing apparatus (10) for moving a substrate (20) relative to one or more deposition sources (30) hav g a longitudinal axis (3 ! ), the swing apparatus (10) comprising: a support body (40) for holding the substrate (20); a rotation mechanism (42) couple to the support body (40) for moving the substrate (20) by an angle (12) around a rotational axis (44) to vary the substrate orientation from a transfer or horizontal orientation (I) to a pm-cessing or vertical orientation (H) at a processing area (72); and a linear motion mechanism (46) coupled to the support body (46) for translating the substrate (20) relative to the longitudinal axis (31 ) of the deposition source (30), when the substrate (20) is in the processing orientation (H)_<

2. The swing apparatus ( i 0) of claim 1, wherein the support body (40) is cots figured to move the substrate (20) in a horiaoniai linear direction perpendicular to the longitudinal axis (31) of the deposition source (30) during the movement from the transfer orientation (Ϊ) to the processing orieniafion (II) and vies versa, uu-J providing a linear offset (48) between an edge of substrate (20) adjacent to the processing area (72) and the longitudinal avis (3 i ) of the deposition source (30),

3, The swing apparatus (10) of any of claims i or 2_» wherein the rotation mechanism (42) is supported by the linear motion mechanism (46),

4. The swing apparatus (10) of any one of the proeedipg claims, further comprising:

i d a protection unit (50) for deposition sou e reducing particles In the processing area.

5, The swing apparatus ( 10) of claim 4, wherein the protection u it (SO) comprises at least a first bellows element (52) and the rotation mechanism (42) comprises at least a rotating: shaft (4?) located inside said first bello ws element (52).

(i. The swing apparatus accordin to claim 5, wherein the linear motion mechanism Is provided inside ie first bellows element. »

7, The swing apparatus (10) of claim 4 or 5. wherein the protection unit (50) comprises at .least a second bellows element and the linear motion mechanism (46) comprises linear guides (49) located inside said second bellows element.

8. The swing apparatus (10) of any one of the preceding claims, wherein the support body (40) comprises a susceptor for heating the substrate (20).

9, The swing apparatus (10) of arty one of the preceding claims, herein the rotation mechanism (42) comprises at least two spline shaft connection elements (421) and at least two rotation_: motors (422).

10. The s wing apparatus (10) of any one of the preceding claims, wherein the substrate (20) is held to she support body (40) by elamp¾

11. A method ( 100) for processing a substrate (20), comprising: holding (102) the substrate (20) on a support body {40); moving (104) the substrate (20) relative to a deposition source (30) tor processing the substrate (20) haying a longitudinal axis (31), the movement of the substrate (2b) being carried out by an angle (12) around a rotational axis (44) to vary the substrate orientation fro a transfer or horizontal orientation (!) to a processing or vertical orientation (P) by a rotation mechanism (42) coupled to the support body (40); processing { 1Ό6) a surface of the substrate (20) with the deposition source (30); and translating (H38) the substrate (20) relative to the longitudinal axis (31) of the deposition source (30), when the substrate (20) is in the processing orientation til_.) by a linear motion mechanism (46) coupled to the support body (40).

12. The method (100) of clai 1 1 _s further comprising: moving the substrate (20) in a horizontal linear direction perpendicular So the longitudinal axis (31) of the deposition source (30) during the movement from the transfer orien tation (I) to the processing orientation (II) sod vice versa.

13, A swing module (60) for receiving s substrate (20) from a transfer chamber (80) of a vacuum processing system and for positioning said substrate (20) in a processing area (72) of a processing: Chamber (70) of the vacuum processing system, the swing module (60) comprising; a vacuum chamber (62), a support body (40) for holding the substrate (20) within the vacuum chamber (62); fetation mechanism (42) coupled to the support body (40) Ibr mpvipg the substrate (20) by an angle (12) around a rotational axis (44) to vary the substrate orientation from a transfer or horizontal orientation (i) to a processing or vertical orientation (II); and a linear motion mechanism (46) coupled to the support body (40) for translating the substrate (20) sideways in relation to the longitudinal axis (31) of the deposition source (30)* when the substrate (20) is in the processing orientation (11),

14, A vacuu processing system (90) for processing & substrate (20), the system (90) comprising: at least a processing: chamber (70) including & deposition source (30) with a longitudinal axis (3 !) for processing the substrate (20); at least a swing module (d0)_s operatively coupled to the processing chamber (70), for positioning the substrate (20) In a processing area (72) of the processing chamber (70); and a transfer chamber (80) operatively coupled to the swing module 0 0), for moving the substrate (20) to the swing module (60)* said swing module (60) comprising: a vacuum chamber (62); a support body (40) for holding the substrate (2⁽5) within the vacuum chamber

(62); a rotation mechanism (42) coupled to (he support body (40) .for moving the substrate (20) by an angle (12) around a rotational axis (44) to vary the substrate orientation from a transfer or horizontal orientation (*) .to a processing -or vertical orientation (H); an s linear motion mechanism (46) coupled to the support body (40) for transhbiug: the substrate (20) sideways in relation to the longitudinal ax is (31 ) of the deposition source (36), when the substrate (20) is in foe processing orientation (11),

15. The system (96) of clai 14, further comprising at least a load lock chamber (92) coupled to the transfer chamber (SO),

1<5. The system (90) of any one of claims 14 or 15, wherein the transfer chamber (SO) has a polygonal or circular shape and is coupled to two or more swing modules (70),

37, The s stem (90) of any one of claims 14 to 16, wherein the deposition source (30) is a vertical linear deposition source or wherein the system further comprises a vertical linear implantation source.