JP2001230217A - Equipment and method for treating substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a wiring film in which voids, etc., are hardly formed and which has high adhesion and superior electric characteristics. SOLUTION: Substrates W are carried in a cleaning unit 11 from cartridges CA accommodated in carried-in/out chambers 15 and 16, and contaminants adsorbed to the surfaces of the substrates W are desorpted by heating the substrates W. Then the substrates W are transferred to a sputter film forming unit 12, and thin TaN barrier films are formed on the substrates W by sputtering an electrode composed of a Ta film material in a nitrogen atmosphere. After forming the barrier films, the substrates W are transferred to an ion plating unit 13, a Cu film material is vaporized by utilizing a plasma beam and, at the same time, a thin Cu seed film is formed on the barrier films by ionizing the Cu vapor. After the substrates W are subjected to the necessary treatment in the units 11-13, the substrates W are temporarily carried in the carrying-in/out chambers 15 and 16 by means of a transporter 10 and successively housed in the cartridges CA.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a substrate processing apparatus and method for performing processing such as film formation for wiring on a substrate.

[0002]

2. Description of the Related Art As a method for forming a Cu wiring on a semiconductor device or the like, first, a substrate having an insulating film pattern formed on a semiconductor wafer is prepared, and a sputter film forming method or a CVD method is formed on the substrate. There is known a method of forming a thin barrier film of TaN, further forming a thin Cu seed layer on the barrier film without breaking vacuum, and using the Cu seed layer as a cathode to fill the grooves and holes of the insulating film pattern by electroplating. Have been.

[0003]

The performance of the Cu wiring thus formed is determined by the film quality of the Cu seed layer. For example, C formed by sputtering
The u seed layer has a low step coverage on the side wall, and the Cu seed layer formed by CVD has many impurities, so that it cannot be said that void generation and adhesion are sufficient. Such a tendency becomes conspicuous in a narrow groove or a small-diameter hole, which hinders miniaturization of wiring due to shrinkage of a device.

Therefore, an object of the present invention is to form a wiring film in which voids and the like are hardly formed and adhesion is good.

[0005]

In order to solve the above-mentioned problems, a substrate processing apparatus according to the present invention supplies a first film forming unit for forming a barrier layer for wiring on a substrate by a dry process, and a plasma beam. A first film forming unit comprising: a plasma source; a hearth having a material evaporation source capable of accommodating a film material of a wiring seed layer and guiding a plasma beam; and holding means for holding the substrate facing the hearth. And a second film-forming unit for forming a wiring seed layer on the barrier layer formed in step (a).

In this case, since the seed layer for wiring is formed by the ion-plating type second film-forming unit having the above-described structure, the material vapor emitted from the heated material evaporation source can be ionized with the plasma beam while being excellently ionized. A seed layer having electrical and mechanical properties can be obtained. That is, a seed layer having high orientation and high adhesive force can be easily formed by the cleaning effect of the substrate surface by the self-bias voltage. In addition, the plasma beam is mainly incident on the hearth and the substrate is not exposed to high-density plasma, and Cu ions and Ar ions emitted from the material evaporation source and excited in the plasma have relatively low energy. Therefore, defects such as plasma damage are not easily formed in the barrier layer on the substrate surface. Further, the seed layer can be formed in a clean environment with relatively low pressure and few impurities. In other words, the seed layer obtained by the above substrate processing apparatus not only uniformly covers the grooves and holes formed on the substrate and in the insulating film pattern underlying the barrier layer, but also has high conductivity and adhesion. And contamination by impurities is small.

[0007] Such a seed layer is used as a cathode for electrolytic plating in the subsequent step of forming a wiring body layer to fill the grooves and holes formed in the underlying insulating film pattern. At this time, since the seed layer has good conductivity and adhesion and acts as an electrode uniformly formed on the barrier layer, without forming voids and the like,
A wiring body layer having a high adhesive force can be formed.

In a preferred aspect of the substrate processing apparatus, the first film forming unit forms the barrier layer by a sputtering film forming method. In this case, a barrier layer having good adhesion can be formed by a dry process.

In a preferred aspect of the substrate processing apparatus, the first film forming unit forms the barrier layer by a CVD method. In this case, a conformal barrier layer can be formed by a dry process.

In a preferred aspect of the substrate processing apparatus, the first film forming unit forms the barrier layer by an ion plating method. In this case, a barrier layer having relatively good film quality can be formed by a dry process without providing a special cleaning step as a former stage.

In a preferred aspect of the substrate processing apparatus, the first and second film forming units perform the film forming in the first and second film forming units.
A preliminary chamber for accommodating a cartridge for accommodating a plurality of substrates, which is performed in a film forming chamber, a first film forming chamber, a second film forming chamber,
And a transfer device that has a transfer chamber that can communicate with the spare chamber and transfers a substrate housed in any one of the first film formation chamber, the second film formation chamber, and the spare chamber to another chamber. And further comprising:

In this case, as a cluster type substrate processing apparatus, formation of a barrier layer and formation of a seed layer can be continuously and efficiently performed, and contamination of contaminants can be minimized.

In a preferred aspect of the substrate processing apparatus, the second film forming unit has at least one of a magnet and a coil arranged annularly around the hearth and controls a magnetic field above and close to the hearth. Wherein the plasma source is a pressure gradient type plasma gun utilizing DC arc discharge.

In this case, the seed layer having a more uniform thickness can be formed by correcting the plasma beam incident on the hearth with the cusp-shaped magnetic field by the magnetic field control member.

In a preferred aspect of the substrate processing apparatus, the apparatus further comprises a cleaning unit for cleaning a surface of the substrate before forming the barrier layer.

When a barrier layer is formed by a sputtering film forming method or a CVD method, the self-surface cleaning effect as described above cannot be expected. Therefore, by cleaning the surface of the substrate in advance, contamination of impurities is small and good adhesion is obtained. A barrier layer can be obtained. In addition,
In the cleaning unit, the substrate surface is purified by heating the substrate with a heater or an infrared lamp, or by sputtering the substrate surface.

In a preferred aspect of the substrate processing apparatus, the substrate processing apparatus further includes a transfer device for transferring the substrate, which has been cleaned by the cleaning unit, to the first film forming unit while maintaining the airtightness.

In this case, the substrate after cleaning can be transported to the first film-forming unit by using the transporting device while avoiding contamination, and the characteristics of the barrier layer can be kept good.

Further, in the substrate processing method of the present invention, a first film forming step of forming a wiring barrier layer on a substrate by a dry process, and supplying a plasma beam toward a material evaporation source disposed as an anode A second film forming step of evaporating the film material of the wiring seed layer accommodated in the material evaporation source and attaching the seed layer to the barrier layer on the substrate surface.

In this case, since the wiring seed layer is formed by the ion-plating type second film forming step using the plasma beam, the material vapor emitted from the heated material evaporation source is activated by the plasma beam. In addition, a seed layer having good electrical and mechanical characteristics can be formed. In the ion plating type film forming step, a good seed film can be obtained by using, for example, a pressure gradient type plasma gun utilizing DC arc discharge.

In a preferred embodiment of the above substrate processing method, a barrier layer is formed by one of a sputtering film forming method and a CVD method in the first film forming step, and the surface of the substrate before forming the barrier layer is cleaned. The method further includes a pretreatment step.

In this case, a sputtering film forming method or a CVD method
By preliminarily cleaning the surface of the substrate before forming the barrier layer by the method, a barrier layer with less contamination of impurities and good adhesion can be obtained.

In a preferred embodiment of the above substrate processing method, a barrier layer is formed by an ion plating method in the first film forming step.

In this case, a barrier layer having relatively good characteristics can be formed by a dry process without providing a special cleaning step as a preceding step. As an ion plating method, a good barrier film can be obtained by using, for example, a pressure gradient type plasma gun utilizing DC arc discharge.

In a preferred aspect of the substrate processing method, a predetermined bias voltage is positively applied to the substrate at a predetermined timing in the second film forming step.

In this case, a seed layer having good step coverage can be formed on the side walls of the grooves and holes formed in the substrate.

[0027]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS [First Embodiment] Hereinafter, a substrate processing apparatus and method according to a first embodiment of the present invention will be described with reference to the drawings.

FIG. 1 is a plan view showing the overall structure of the substrate processing apparatus according to the first embodiment. This substrate processing apparatus is a cluster tool type semiconductor processing apparatus that collectively performs a series of processing steps on a substrate such as a semiconductor wafer, and includes a transfer apparatus 1 as a plurality of processing units for performing predetermined processing on a substrate W.
A pair of cleaning units 11 each performing surface cleaning of the substrate W centered on 0, and a sputter film forming unit 12 which is a first film forming unit for forming a barrier layer on the substrate W using a sputtering film forming method. And an ion plating unit 13 as a second film forming unit for forming a seed layer on the substrate W by using an ion plating method, and two carry-in / out chambers 15 and 16.

In the center of the transfer chamber constituting the transfer device 10, a transfer vacuum robot 26 as an articulated transfer means is provided.
Is arranged. The transfer vacuum robot 26 includes an arm 26a that can expand and contract and can rotate around a vertical axis perpendicular to the paper surface, and a hand 26b that is fixed to a tip of the arm 26a and supports the substrate W. The hand 26b supporting the substrate W is sent to the arm 26a, and can move the substrate W into and out of the processing units 11 to 13 and the loading / unloading chambers 15 and 16.

The cleaning unit 11 is for cleaning the substrate W as a pretreatment, and although not shown, a heating plate for supporting and heating the substrate W, a chamber for accommodating the substrate W together with the heating plate,
A vacuum pump or the like for sucking a vacuum around the substrate W is provided.
The cleaning unit 11 is not limited to one that performs heat treatment. For example, a cleaning device that sputters the surface of the substrate W with ion particles such as argon can be used. Further, a cleaning device that removes adsorbed substances on the surface of the substrate W by lamp annealing using an infrared lamp can be used.

As will be described in detail later, the sputter film forming unit 12 forms a film by sputtering a target electrode made of a film material to cause a film material emitted from the target electrode to adhere to the substrate W. is there.

As will be described in detail later, the ion plating unit 13 supplies a plasma beam toward the material evaporation source to evaporate the film material of the material evaporation source, and ionizes the evaporated material in the plasma beam. The film is formed while being adhered onto the substrate W while being formed.

The loading / unloading chambers 15 and 16 are used for exchanging the substrate W with the outside of the substrate processing apparatus. Each of the loading / unloading chambers 15 and 16 has a cartridge stage on which a cartridge CA accommodating a plurality of substrates W can be placed. There is provided a spare chamber for accommodating the cartridge stage, and a stage driving device for moving the cartridge stage up and down.

The transfer device 10 and each processing unit 11
13 are connected to each other via a gate valve 24 capable of maintaining vacuum tightness, and the transfer device 10 and each of the loading / unloading chambers 15 and 16 are also transferred via a gate valve 25 capable of maintaining vacuum tightness. It is openably and closably connected to the device 10. Thereby, each processing unit 11 to 13 and each loading / unloading room 15,
The substrate W can be delivered to and from the substrate 16 without breaking the vacuum.

Hereinafter, an outline of the operation of the substrate processing apparatus shown in FIG. 1 will be described with reference to FIG. A desired insulating film pattern IP made of SiO ₂ on a semiconductor wafer S in advance
Are prepared (see FIG. 2A). The insulating film pattern IP has, for example, a trench TR having a submicron width. Next, these substrates W are stored in the cartridge CA. The cartridge CA is once carried into one of the carry-in / out chambers 15 and 16, and a separately prepared empty cartridge CA is carried into the other of the carry-in / out rooms 15 and 16. Next, the inside of both the loading / unloading chambers 15 and 16 is depressurized. Then, the substrates W in the cartridges CA arranged in the carry-in / out chambers 15 and 16 are taken into the inside of the carrier device 10 one by one by the carrier vacuum robot 26 provided in the carrier device 10. Are sequentially conveyed inside. In these processing units 11 to 13, necessary cleaning and film formation proceed in a desired procedure.

The specific processing procedure in the processing units 11 to 13 will be described first.
The substrate W is carried out to the cleaning unit 11 from the cartridges CA stored in the cartridges 5 and 16, where the substrate W is heated to remove the contaminants adsorbed on the surface of the substrate W. In addition,
When the priority is given to the throughput, the two cleaning units 11 perform parallel processing, and the next processing unit 12,
13 can be matched with the processing time.

Next, the substrate W is
Is transferred, and a TaN barrier film BF is thinly formed on the substrate W by sputtering a target electrode made of a film material Ta in a nitrogen atmosphere (see FIG. 2B). The thickness of the barrier film BF is about 250 ° at the top of the trench TR, about 50 ° at the side wall of the trench TR, and about 100 ° at the bottom of the trench TR.

Next, the ion plating unit 13
Substrate W is transported to the film material C using a plasma beam.
u is evaporated and the Cu vapor is ionized to form a Cu seed film SF on the substrate W and on the barrier film BF.
Is formed thinly (see FIG. 2C). The thickness of the seed film SF is about 2000 ° at the top of the trench TR under no bias, about 300 to 500 ° at the side wall of the trench TR, and about 2000 ° at the bottom of the trench TR. That is,
The seed film SF thus obtained has a sufficient thickness on the side wall of the trench TR, and is a bottom-up film in which the bottom of the trench TR is further thickened. Therefore, a seed film SF having good characteristics as an electrode for plating can be formed in the trench TR. Note that it is also possible to make only the upper part of the trench TR thin by applying a bias. In this case, it is possible to form a seed film SF having good side coverage and more excellent characteristics as an electrode for plating.

The substrate W which has been subjected to the necessary processing in the processing units 11 to 13 is once transferred through the transfer device 10 to the transfer chamber 1.
5 and 16 and sequentially stored in empty cartridges CA. The cartridge CA containing the processed substrate W in the carry-in / out chambers 15 and 16 is carried out of the substrate processing apparatus at an appropriate timing.

Next, on the seed film SF formed by the substrate processing apparatus shown in FIG. 1, wet copper plating is performed using the seed film SF as a low resistance electrode, and a thick Cu film is formed on the seed film SF.
A plating film PF is formed (see FIG. 2D). Thereby, the trench TR of the insulating film pattern IP is buried in a void-free and well-adhered manner over a wide range from a small width to a large width.

Next, an upper Cu plating film PF on the substrate W,
The barrier film BF and the seed film SF are formed by CMP (chemico
-mechanical polishing) to complete the Cu wiring formation (see FIG. 2E).

FIG. 3 is a view for explaining a specific structure of the sputter deposition unit 12 shown in FIG.

The sputter film forming unit 12 includes a film forming chamber 31 having a sealed structure capable of maintaining vacuum airtightness. A first supply port 31a is provided above the film forming chamber 31. Ar gas for sputtering is supplied at a desired supply amount to the first supply port 31a, and Ar gas necessary for sputtering is introduced into the film forming chamber 31. Below the first supply port 31a, there is provided a second supply port 31b for supplying a desired amount of a gas N ₂ gas as a constituent material of the barrier film BF into the film forming chamber 31. Further, an exhaust port 31c is formed below the film forming chamber 31 in order to discard unnecessary gas and the like in the film forming chamber 31 and maintain the inside vacuum level.

A barrier film BF is provided above the inside of the film forming chamber 31.
Target electrode 3 made of Ta as a film material
2 are arranged. The application of the voltage to the target electrode 32 is controlled by a DC power supply 39a.

A holder 33 for supporting the substrate W facing the target electrode 32 is disposed below the inside of the film forming chamber 31. The holder 33 has a built-in heater 33a, and can heat the substrate W at a required timing to set a desired temperature. In addition, this holder 33 includes:
An elevating mechanism 3 including pins and the like for elevating the substrate W on the holder 33 when the substrate W is carried in and out of the film forming chamber 31.
3b is also built in. The operations of the heater 33a and the elevating mechanism 33b are controlled by the driving device 37. Further, an appropriate potential is supplied to the substrate W on the holder 33 via the holder 33 (an electrode that contacts the surface of the substrate W if necessary). The potential supplied to the substrate W is controlled by the power supply device 36. Note that the substrate W, that is, the holder 33, is electrically insulated from the film forming chamber 31.

An RF coil 34 for forming a magnetic field to which high-frequency power is supplied is disposed above the film forming chamber 31 and on the inner periphery thereof. The magnetic field from the RF coil 34 improves the plasma density in the film forming chamber 31. The power supply to the RF coil 34 is controlled by the RF power supply 39b.

The formation of the barrier film by the apparatus shown in FIG. 3 is performed on the substrate W in a state where the film-forming surface is directed upward and the bias potential is adjusted to a desired value. Describing a specific film formation, first, the substrate W after the surface cleaning is carried into the film formation chamber 31 through the carry-in entrance 31h, and is placed on the holder 33. Next, a negative DC voltage (minus) is applied to the target electrode 32 while supplying appropriate amounts of Ar gas and N ₂ gas from the first and second supply ports 31a and 31b, respectively. As a result, the Ar ions in the film forming chamber 31 are accelerated to an appropriate speed and strike the target electrode 32, so that sputtered Ta particles fly out of the target electrode 32.
At the same time, a high-frequency current is supplied to the coil 34 to form an electromagnetic field that fluctuates at a high frequency below the target electrode 32. Thereby, ionization is promoted and a high-density plasma P is formed. The directivity of the ions of Ta or N having passed through the high-density plasma P is increased by the bias voltage applied to the substrate W, and is incident on the substrate W on the holder 33. As a result, a TaN barrier film is formed on the substrate W.

FIG. 4 is a view for explaining a specific structure of the ion plating unit 13 shown in FIG. In addition,
In this ion plating unit 13, unlike the case of the sputter deposition unit 12, the deposition is performed on the substrate W with the deposition surface facing down.

The ion plating unit 13 is provided with an upper substrate transfer chamber 4 provided for transferring and reversing the substrate W.
0 and a film forming chamber 41 for actually performing film formation.
The substrate transfer chamber 40 and the film forming chamber 41 have a structure capable of maintaining vacuum airtightness by integrating them. That is, in this airtight container, the upper side is a delivery space S1 for receiving and reversing the substrate W, and the lower side is a processing space S2 for forming a film on the surface of the substrate W.

The substrate delivery chamber 40 has a vacuum delivery space S 1.
A substrate handling device 51 for performing the reversal while holding the substrate W therein is provided. The substrate handling device 51 includes:
Substrate W supported on one side by pivoting around a horizontal axis at the end
And a supporting member 53 that rotates together with the supporting member. The support member 53 includes a driving device 54 controlled by a control device 56.
1 between the transfer position where the substrate W transferred by the transfer vacuum robot 26 in FIG. 1 is received at the transfer space S1 side and the processing position where the substrate W is opposed to the processing space S2. To rotate. As described above, when the support member 53 moves from the delivery position to the processing position, the support member 53 is turned over and the opening AP that connects the delivery space S1 and the processing space S2 is closed. When the support member 53 faces the processing space S2 during film formation, the temperature and the potential of the surface of the substrate W supported on the lower surface can be adjusted.

Below the processing space S2 of the film forming chamber 41, a hearth 61a, which is a source and an anode having a concave portion for accommodating the evaporation material, is arranged in an annular shape around the hearth 61a. In addition to the anode member 61 including the annular auxiliary anode 61b, an annular magnet 62 is disposed as a magnetic field control member immediately below the annular auxiliary anode 61b. The annular magnet 62 is composed of a permanent magnet and an electromagnet, and controls the magnetic field above and around the hearth 61a to maintain the uniformity of the plasma beam guided to the hearth 61a. The operation of the anode member 61 and the annular magnet 62 is controlled by the power supply device 6.
7.

On one side surface of the lower side wall of the film forming chamber 41, a plasma gun 6 serving as a plasma source is provided so as to face the processing space S2.
3 are provided. This plasma gun 63 is a pressure gradient type plasma gun using a DC arc discharge disclosed in Japanese Patent Application Laid-Open No. Hei 8-232060, etc., and has a molybdenum outer cylinder and a tantalum made by introducing a carrier gas such as Ar. A gun body 63a formed by fixing one end of a double cylinder consisting of an inner pipe with a disk-shaped cathode and disposing a LaB ₆ disk at the other end, and an electrode for extracting a plasma beam emitted from the gun body 63a An annular electromagnetic pole portion 63b having a role of converging a plasma beam as well as a cylindrical portion 63c connecting the electromagnetic pole portion 63b to the film forming chamber 41 is provided. In addition, the plasma gun 63
Applies a plasma beam around the cylindrical portion 63c to the film forming chamber 41.
It has an annular steering coil 63d for guiding the inside. The operation of the plasma gun 63 is controlled by the gun driving device 68.

On the left and above the plasma gun 63, an exhaust system 65 for maintaining the processing space S2 of the film forming chamber 41 and the delivery space S1 of the substrate delivery chamber 40 at an appropriate degree of vacuum is provided. The exhaust system 65 includes an exhaust chamber 65a having a gate valve (not shown) between the film forming chamber 41 and a cryopump 65b and a molecular turbo pump 6 for high vacuum exhaust.
5c.

The Cu seed film formation by the apparatus shown in FIG. 4 will be specifically described. The substrate W transferred by the transfer vacuum robot 26 with the surface to be processed facing upward is placed in the opening 4.
The substrate is carried into the delivery space S1 in the substrate delivery chamber 40 via the support member 53, and is placed and fixed on a support member 53 provided in the substrate handling device 51. When the support member 53 receives the substrate W, the support member 53 is at the delivery position on the opening 40a side. However, the support member 53 is driven by the driving device 54 to be turned over, so that the substrate W is turned downward and the film formation surface is turned down. Is moved to a processing position facing the processing space S2. The support member 53 moved to the processing position closes the adjacent processing space S2, that is, the opening AP. The upper surface (back surface) of the substrate W arranged with the film formation surface facing downward is in uniform contact with the support member 53, and the temperature of the substrate W during film formation is appropriately adjusted. Further, an electrode is provided on the support member 53, and the potential of the substrate W during film formation is appropriately adjusted.

The formation of the Cu seed film by ion plating is performed on the substrate W in such a state that the film formation surface is directed downward and the temperature and potential are adjusted to a desired value. Describing a specific film formation, Cu, which is an evaporating substance, is heated and melted in the recess of the hearth 61a. In this state, the state is switched from the standby state in which the plasma beam PB from the plasma gun 63 is incident on the annular auxiliary anode 61b to the film formation state in which the plasma beam PB is incident on the hearth 61a. Thus, a metal film is formed and grown on the lower surface of the substrate W, that is, the surface to be processed. When the film formed on the surface to be processed of the substrate W has a predetermined thickness, the plasma beam is switched to a standby state in which the plasma beam is incident on the annular auxiliary anode 61b.
Thus, the process of forming a thin film on the surface of the substrate W to be processed is completed. By using the plasma gun 63 of the present embodiment, a strong plasma beam can be continuously and stably supplied, and a high-quality film can be quickly formed on the substrate W. Further, since a cusp magnetic field is formed above the hearth 61a by the annular magnet 62 and the plasma beam incident on the hearth 61a is corrected, a film having a more uniform thickness is formed on the substrate W. At this time, the substrate W
By applying a bias voltage for adjusting the surface potential of the substrate, a Cu seed film having good bottom-up side step coverage can be formed in the trench TR (see FIG. 2C) formed in the substrate W.

The ion plating unit 13
The ion plating utilizing the method has a surface cleaning effect by self-bias for removing contaminants attached to the surface of the underlying TaN barrier film at the start of the formation of the Cu seed film. This surface cleaning is performed by partially diffusing the plasma beam PB from the plasma gun 63 toward the support member 53 side, so that even if the substrate W is not positively applied with a voltage, the substrate W will be in the vicinity of the surface.
This utilizes the fact that a self-bias voltage of about 0 V is formed. Due to this self-bias, the surface of the substrate W is sputter-cleaned weakly mainly by Ar ions. At this time, a bias voltage can be positively applied according to contamination on the substrate surface. By utilizing such a surface cleaning effect, it is possible to form a Cu seed film having good adhesion to the underlying TaN barrier film and having a high (111) orientation. Further, in the ion plating unit 13, the plasma beam PB was mainly incident on the hearth 61a and the substrate W was not exposed to the high-density plasma, and was emitted from the hearth 61a and passed through the plasma to be ionized. Since Cu ions and Ar ions have relatively low energy, defects such as plasma damage are not easily formed in the TaN barrier film on the surface of the substrate W. Further, unlike the CVD or the like, the Cu seed film can be formed in an environment having a relatively low pressure and a small amount of impurities.
It is possible to prevent impurities from being mixed into the u seed film.

The Cu seed film obtained as described above is uniformly (with good side step coverage) irrespective of the presence or absence of irregularities (grooves TR and the like) of the underlying insulating film pattern IP and TaN barrier film. In addition, it has high conductivity and adhesion, and is less contaminated by impurities. That is, this C
If the u seed film is used as a low-resistance electrode film when forming a Cu plating film PF using an electrolytic plating method, which is a subsequent step, it is possible to bury an extremely fine trench TR or the like in a void-free manner. The adhesion of the plating film PF can be improved.

Next, the support member 53 is turned over, and the substrate W is moved from the processing space S2 to the delivery space S1. Then, the lock of the substrate W is released, and the substrate W is transferred from the support member 53 to the transfer vacuum robot 26 of FIG.

FIG. 5 is an enlarged side view showing the structure of the support member 53. As shown in FIG. The support member 53 temporarily supports a disk-shaped support plate 53a that supports the substrate W from the back surface during film formation and an operation position where the substrate W transferred from the transfer device 10 projects from the upper surface of the support plate 53a. And a ring-shaped holding member 53c that urges the periphery of the substrate W transferred to the support plate 53a along with the lowering of the support pins 53b toward the support plate 53a to hold it. Have.

The support plate 53a is connected to a hinge 53d that supports the support plate 53a so as to be rotatable around a horizontal axis HA.
Cooling water or the like is supplied to the support plate 53a through a pipe (not shown) provided in the hinge 53d, and a heater is also built in. The support plate 53a is in contact with the back surface of the substrate W passed from the support pins 53b and adjusts the temperature of the substrate W as appropriate.

Each of the support pins 53b can be reciprocated as appropriate between an operating position shown in the drawing protruding from the upper surface of the support plate 53a and a retracted position retracted from the upper surface of the support plate 53a. When the support member 53 is at the delivery position as indicated by the solid line, the support pins 53b move to the operation position and temporarily support the substrate W transferred by the transfer vacuum robot 26. Hand 26b of transfer vacuum robot 26
Is retracted, the support pins 53b move down to the retreat position, and the supported substrate W is placed on the support surface SS of the support plate 53a.

The holding member 53c is connected to the support pins 53f via a pair of columns 53f and a connecting member 53g extending in the horizontal direction.
b. That is, the holding member 53c and the support pin 53b are interlocked, and when the support pin 53b projects and is in the operating position, the holding member 53c is in a retracted position and the fixing of the substrate W to the support plate 53a is released. . On the other hand, when the support pin 53b is retracted and is in the retracted position, the operating position of the holding member 53c is set, and the substrate W is
Fixed to In addition, a slide guide for relatively smoothly moving the connecting member 53g in a direction perpendicular to the support surface SS is provided between the connecting member 53g and the support plate 53a.

A bellows 53i whose internal pressure can be adjusted is sandwiched between the back surface of the support plate 53a and the support 53h provided on the connecting member 53g, and both ends are fixed. As a result, if the air pressure supplied to the bellows 53i is adjusted,
The support pin 53b can be moved to an operation position or a retreat position at an arbitrary timing. For example, bellows 53i
When the internal pressure is increased to some extent, the bellows 53i is relatively extended, so that the support pin 53b can be moved to the retracted position and the holding member 53c can be biased to be moved to the operating position. On the other hand, when the pressure inside the bellows 53i is reduced to some extent, the support plate 53a by the holding member 53c is used.
The fixing of the substrate W to the support pin 53b can be released, and the support pin 53b can be fixed to the operating position. However, as it is, there is a possibility that the support pin 53b does not rise to the operating position due to the weight of the holding member 53c or the like.
And the holding member 53 forcibly releasing the fixing of the substrate W
c is to be increased. Thus, a certain gap can be formed between the holding member 53c and the support plate 53a, and the substrate W can be inserted below the holding member 53c and placed on each support pin 53b safely and securely. it can. The cylinder device 55 is disposed outside the substrate delivery chamber 40 and has a rod 5 extending from the cylinder 55d.
5a is able to advance and retreat into the substrate transfer chamber 40 while being sealed by the bellows 55b. The tip of the rod 55a, which moves up and down by an appropriate amount at a necessary timing, contacts the lower surface of the support 53h and adjusts it to an appropriate height position. At this time, the support plate 53a is locked and does not rotate.

[Second Embodiment] Hereinafter, a substrate processing apparatus and method according to a second embodiment of the present invention will be described. Note that the substrate processing apparatus according to the second embodiment is a modification of the apparatus according to the first embodiment, and the same portions are denoted by the same reference numerals, and redundant description will be omitted.

FIG. 6 is a plan view showing the entire structure of the substrate processing apparatus according to the second embodiment. This substrate processing apparatus is also a cluster tool type semiconductor processing apparatus that collectively performs a series of processing steps on a substrate such as a semiconductor wafer.
A pair of ion plating units 13 and 11, which are first and second film forming units for forming a seed layer on the substrate W using ion plating, centered on 0.
3 and two loading / unloading rooms 15 and 16. That is,
Another ion plating unit 113 is added instead of the sputter deposition unit 12 of the apparatus of the first embodiment,
The cleaning unit 11 unnecessary as a pretreatment for the ion plating units 13 and 113 is omitted. Here, a pair of ion plating units 1
The structures of 3 and 113 are shown in FIG. 4, and both have the same structure. However, the hearth 61a of the ion plating unit 113 has Ta as a material of the barrier layer.
Is housed.

The operation of the substrate processing apparatus shown in FIG. 6 will be described. A plurality of substrates W on which a desired insulating film pattern IP made of SiO ₂ is formed in advance on a semiconductor wafer S are prepared, and these substrates W are stored in a cartridge CA.

The cartridge CA is once loaded in the loading / unloading chamber 1.
The empty cartridge CA that is carried into one of the transfer chambers 5 and 16 and separately prepared is also carried into the other of the transfer chambers 15 and 16. Next, the inside of both the loading / unloading chambers 15 and 16 is depressurized.

Next, the substrate W is transferred from the cartridge CA housed in one of the carry-in / out chambers 15 and 16 to the ion plating unit 113, and the film material Ta is evaporated using a plasma beam in a nitrogen atmosphere. This Ta vapor is ionized to form a thin TaN barrier film BF on the substrate W (see FIG. 2B of the first embodiment).

Next, the ion plating unit 13
Substrate W is transported to the film material C using a plasma beam.
u is evaporated and the Cu vapor is ionized to form a Cu seed film SF on the substrate W and on the barrier film BF.
Is formed thin (see FIG. 2C of the first embodiment).

Both ion plating units 13, 1
The substrate W after the necessary processing in 13 is transferred to the transfer device 10
Are carried into the carry-in / out rooms 15 and 16 once, and are sequentially stored in the cartridge CA. The cartridge CA containing the processed substrate W in the carry-in / out chambers 15 and 16 is carried out of the substrate processing apparatus at an appropriate timing.

[Third Embodiment] Hereinafter, a substrate processing apparatus and method according to a third embodiment of the present invention will be described. Note that the substrate processing apparatus of the third embodiment is a modification of the apparatus of the first embodiment, and uses a CVD method instead of the sputter deposition unit 12 (see FIG. 1) of the apparatus of the first embodiment. A CVD unit for forming a barrier layer is incorporated.

FIG. 7 is a view showing the structure of a CVD unit 212 for forming a barrier film used in this embodiment. The CVD unit 212 includes a film forming chamber 8 having a closed structure.
It is composed of 1. Above the film forming chamber 81, a shower head 82 for supplying a reaction gas serving as a constituent material of the barrier film BF to a desired temperature and supplying the reaction gas to the inside of the film forming chamber 81 is provided. The shower head 82 is connected via a pipe 83 to a reaction gas source (not shown) and a flow rate control mechanism for adjusting the supply amount of the reaction gas from the source.
In the pipe 83, a connection portion with the shower head 82
The reaction gas is wrapped in a coil 84 for applying a high frequency, and the reaction gas is turned into plasma and supplied to the shower head 82. The power supply to the coil 84 is controlled by a power supply device 86.

A holder 85 for supporting the substrate W facing the shower head 82 is disposed below the inside of the film forming chamber 41. The holder 85 has a built-in heater 85a, and can heat the substrate W at a required timing to set a desired temperature. Also, this holder 85 has
An elevating mechanism 8 including pins and the like for elevating the substrate W on the holder 85 when the substrate W is carried in and out of the film forming chamber 81.
5b is also built in. The operations of the heater 85a and the elevating mechanism 85b are controlled by the driving device 87.

The film formation of the barrier film by the apparatus shown in FIG. 7 is performed on the substrate W with the film formation surface facing upward. Describing a specific film formation, first, the substrate W after the surface cleaning is carried into the film formation chamber 81 via the carry-in port 81h,
It is placed on the holder 85. Next, an appropriate high-frequency current is supplied to the coil 84 while supplying an appropriate amount of Ta-based organic gas and nitrogen gas from the pipe 83. Thereby, the gas passing through the pipe 83 is decomposed and turned into plasma. The plasma gas PG is uniformly supplied downward through the shower head 82. The ions and active atoms in the gas PG are incident on the substrate W on the holder 85, and a barrier film made of TaN is deposited on the surface of the substrate W.

The overall processing using the substrate processing apparatus according to the third embodiment is the same as that shown in FIG. 2, and a description thereof will be omitted.

Although the present invention has been described with reference to the embodiment, the present invention is not limited to the above embodiment.
For example, in the above embodiment, the sputter deposition unit 12
Although the case where TaN is formed as a barrier film by the ion plating unit 113 or the like has been described, other materials may be used by changing the material of the target electrode 32 of the sputtering film forming unit 12 or the gas introduced into the film forming chamber 31. For example, a barrier film made of Ta, TiN or the like can be formed.

In the above description, the case where Cu is formed as a seed film by the ion plating unit 13 has been described. However, by changing the evaporation metal accommodated in the hearth 61a of the ion plating unit 13, the other A seed film made of a material such as Al, Ag, Au, Pt or the like can also be formed.

The sputtering film forming unit 12 and the CVD
The specific film forming method adopted in the unit 212 is not limited to the one disclosed in the above embodiment, but may be an apparatus for performing a sputter film forming method or a CVD method incorporating various ideas and improvements.

[0079]

As is clear from the above description, according to the substrate processing apparatus of the present invention, since the wiring seed layer is formed by the ion-plating type second film forming unit having the above-described structure, the substrate is heated. Good electrical, while ionizing the material vapor emitted from the material evaporation source by the plasma beam,
A seed layer having mechanical properties can be formed.

Further, according to the substrate processing method of the present invention, the seed layer for wiring is formed by the second film forming step of the ion plating type using the plasma beam.
A seed layer having good electrical and mechanical properties can be formed while activating a material vapor emitted from a heated material evaporation source with a plasma beam.

[Brief description of the drawings]

FIG. 1 is a plan view illustrating a structure of a substrate processing apparatus according to a first embodiment.

FIGS. 2A to 2E are diagrams illustrating a method for forming a wiring using the apparatus of FIG. 1;

FIG. 3 is a view for explaining the structure of a sputter film forming unit constituting the apparatus of FIG. 1;

FIG. 4 is a view for explaining the structure of an ion plating unit constituting the apparatus of FIG. 1;

FIG. 5 is a partially enlarged view illustrating the structure of a reversing mechanism provided in the ion plating unit of FIG. 4;

FIG. 6 is a plan view illustrating a structure of a substrate processing apparatus according to a second embodiment.

FIG. 7 is a diagram illustrating C incorporated in a substrate processing apparatus according to a third embodiment.
It is a figure explaining the structure of a VD unit.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Conveying apparatus 11 Cleaning unit 11-13 Processing unit 12 Sputter film forming unit 13,113 Ion plating unit 15,16 Carry-in / out chamber 26 Transport vacuum robot 31 Film-forming room 32 Target electrode 33 Holder 34 Coil 40 Substrate delivery room 41 Construction Film chamber 43 Plasma gun 51 Substrate handling device 53 Support member 61 Anode member 61a Hearth 61b Annular auxiliary anode 62 Annular magnet 63 Plasma gun 81 Film formation chamber 82 Shower head 84 Coil 85 Holder 212 CVD unit BF Barrier film CA cartridge IP Insulating film pattern P plasma PB plasma beam PF plating film SF seed film TR groove W substrate

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/3205 H01L 21/88 MF term (Reference) 4K029 AA06 BA08 BA58 BB02 BC03 BD01 CA03 CA06 DD06 FA04 KA01 4K030 AA11 AA18 BA17 BA38 BB12 CA04 DA03 FA04 GA12 HA03 LA15 4M104 BB04 BB32 DD36 DD39 DD42 DD52 FF18 HH08 HH13 5F033 HH11 HH32 MM01 MM12 MM13 PP16 PP20 PP27 PP33 QQ48 XX02 XX13

Claims (12)

[Claims] 1. A first film forming unit for forming a wiring barrier layer on a substrate by a dry process, a plasma source for supplying a plasma beam, and a material evaporation source capable of containing a film material for a wiring seed layer Having a hearth for guiding the plasma beam, and holding means for holding a substrate facing the hearth, and forming a wiring seed layer on the barrier layer formed by the first film forming unit. A substrate processing apparatus including a second film forming unit. 2. The substrate processing apparatus according to claim 1, wherein the first film forming unit forms the barrier layer by a sputtering film forming method. 3. The method according to claim 1, wherein the first film forming unit forms the barrier layer by a CVD method.
The substrate processing apparatus according to any one of the preceding claims. 4. The substrate processing apparatus according to claim 1, wherein the first film forming unit forms the barrier layer by an ion plating method. 5. The first and second film forming units perform film formation in first and second film forming chambers, respectively, and include a spare chamber for accommodating a cartridge for accommodating a plurality of substrates, and the first film forming chamber. A transfer chamber that can communicate with the film chamber, the second film formation chamber, and the preparatory chamber, and a transfer chamber in any one of the first film formation chamber, the second film formation chamber, and the preparatory chamber; 5. The substrate processing apparatus according to claim 1, further comprising: a transfer device configured to transfer the accommodated substrate into another chamber. 6. The second film forming unit further includes a magnetic field control member having at least one of a magnet and a coil arranged in an annular shape around the hearth and controlling a magnetic field above and close to the hearth. The plasma source is D
The substrate processing apparatus according to any one of claims 1 to 5, wherein the substrate processing apparatus is a pressure gradient plasma gun using C arc discharge. 7. The substrate processing apparatus according to claim 1, further comprising a cleaning unit for cleaning a surface of the substrate before forming the barrier layer. 8. The substrate processing apparatus according to claim 1, further comprising a transfer device that transfers the substrate, which has been cleaned by the cleaning unit, to the first film forming unit while maintaining airtightness. apparatus. 9. A first film forming step for forming a barrier layer for wiring on a substrate by a dry process, and supplying a plasma beam toward a material evaporation source arranged as an anode, thereby supplying the material evaporation source to the material evaporation source. A second film forming step of evaporating the film material of the accommodated wiring seed layer and attaching the seed layer on the barrier layer on the substrate surface;
A substrate processing method comprising: 10. A pre-processing step of forming the barrier layer by one of a sputtering film forming method and a CVD method in the first film forming step, and cleaning a surface of the substrate before forming the barrier layer. The substrate processing method according to claim 9, further comprising: 11. The substrate processing method according to claim 9, wherein, in the first film forming step, the barrier layer is formed by an ion plating method. 12. The substrate processing method according to claim 9, wherein a predetermined bias voltage is positively applied to the substrate at a predetermined timing in the second film forming step.