TW201335971A - 奈米壓印模具用基底、奈米壓印模具及其製造方法 - Google Patents
奈米壓印模具用基底、奈米壓印模具及其製造方法 Download PDFInfo
- Publication number
- TW201335971A TW201335971A TW102102526A TW102102526A TW201335971A TW 201335971 A TW201335971 A TW 201335971A TW 102102526 A TW102102526 A TW 102102526A TW 102102526 A TW102102526 A TW 102102526A TW 201335971 A TW201335971 A TW 201335971A
- Authority
- TW
- Taiwan
- Prior art keywords
- mask layer
- hard mask
- substrate
- glass substrate
- film
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 79
- 239000000758 substrate Substances 0.000 claims abstract description 139
- 239000011521 glass Substances 0.000 claims abstract description 92
- 239000011651 chromium Substances 0.000 claims abstract description 69
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 35
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 18
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims description 87
- 239000007789 gas Substances 0.000 claims description 79
- 238000001312 dry etching Methods 0.000 claims description 29
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 24
- 229910052731 fluorine Inorganic materials 0.000 claims description 24
- 239000011737 fluorine Substances 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 239000000460 chlorine Substances 0.000 claims description 17
- 229910052786 argon Inorganic materials 0.000 claims description 16
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 14
- 229910052801 chlorine Inorganic materials 0.000 claims description 14
- 238000004544 sputter deposition Methods 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 135
- 239000013078 crystal Substances 0.000 description 25
- 230000003746 surface roughness Effects 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 21
- 229910010413 TiO 2 Inorganic materials 0.000 description 19
- 229910004298 SiO 2 Inorganic materials 0.000 description 17
- 239000000203 mixture Substances 0.000 description 15
- 238000001755 magnetron sputter deposition Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 10
- 229910052734 helium Inorganic materials 0.000 description 9
- 239000001307 helium Substances 0.000 description 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 8
- 238000012546 transfer Methods 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000426 electronic spectroscopy Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/002—Component parts, details or accessories; Auxiliary operations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
- B29C33/3842—Manufacturing moulds, e.g. shaping the mould surface by machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
- B29C33/424—Moulding surfaces provided with means for marking or patterning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/225—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4414—Electrochemical vapour deposition [EVD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/28—Other inorganic materials
- C03C2217/281—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
- C03C2218/33—Partly or completely removing a coating by etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electrochemistry (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012010975 | 2012-01-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201335971A true TW201335971A (zh) | 2013-09-01 |
| TWI562197B TWI562197B (enExample) | 2016-12-11 |
Family
ID=48873352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102102526A TW201335971A (zh) | 2012-01-23 | 2013-01-23 | 奈米壓印模具用基底、奈米壓印模具及其製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20140335215A1 (enExample) |
| JP (1) | JPWO2013111631A1 (enExample) |
| KR (1) | KR20140117429A (enExample) |
| TW (1) | TW201335971A (enExample) |
| WO (1) | WO2013111631A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6232820B2 (ja) * | 2013-08-06 | 2017-11-22 | 大日本印刷株式会社 | ナノインプリントリソグラフィ用のテンプレートの欠陥修正方法、検査方法および製造方法 |
| CN103579421A (zh) * | 2013-11-07 | 2014-02-12 | 无锡英普林纳米科技有限公司 | 一种大面积图案化蓝宝石衬底的制备方法 |
| US10156786B2 (en) * | 2015-09-30 | 2018-12-18 | Thomas E. Seidel | Method and structure for nanoimprint lithography masks using optical film coatings |
| TWI646389B (zh) | 2017-09-12 | 2019-01-01 | 友達光電股份有限公司 | 壓印模具以及壓印模具製造方法 |
| US10777728B2 (en) * | 2019-01-18 | 2020-09-15 | Microsoft Technology Licensing, Llc | Fabrication of a quantum device |
| US10978632B2 (en) | 2019-01-18 | 2021-04-13 | Microsoft Technology Licensing, Llc | Fabrication of a device |
| KR20220024004A (ko) * | 2019-06-27 | 2022-03-03 | 호야 가부시키가이샤 | 박막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 |
| JP2019201224A (ja) * | 2019-08-19 | 2019-11-21 | 大日本印刷株式会社 | インプリントモールド用基材及びインプリントモールド |
| US11745453B2 (en) * | 2020-03-05 | 2023-09-05 | Continental Autonomous Mobility US, LLC | Method of making and using a reusable mold for fabrication of optical elements |
| US11520228B2 (en) * | 2020-09-03 | 2022-12-06 | International Business Machines Corporation | Mass fabrication-compatible processing of semiconductor metasurfaces |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10198023A (ja) * | 1997-01-09 | 1998-07-31 | Nec Corp | Ｘ線露光マスク及びその製造方法 |
| TWI224078B (en) * | 2003-12-09 | 2004-11-21 | Ind Tech Res Inst | Manufacture method and structure for impression mold insert |
| JP4619043B2 (ja) * | 2004-06-02 | 2011-01-26 | Ｈｏｙａ株式会社 | 位相シフトマスクの製造方法及びテンプレートの製造方法 |
| JP5000112B2 (ja) * | 2005-09-09 | 2012-08-15 | 東京応化工業株式会社 | ナノインプリントリソグラフィによるパターン形成方法 |
| JP4509050B2 (ja) * | 2006-03-10 | 2010-07-21 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
| JP4465405B2 (ja) * | 2008-02-27 | 2010-05-19 | Ｈｏｙａ株式会社 | フォトマスクブランクおよびフォトマスク並びにこれらの製造方法 |
| JP2009206339A (ja) * | 2008-02-28 | 2009-09-10 | Hoya Corp | インプリントモールド用マスクブランク及びインプリントモールドの製造方法 |
| JP5221168B2 (ja) * | 2008-02-28 | 2013-06-26 | Ｈｏｙａ株式会社 | インプリントモールド用マスクブランク及びインプリントモールドの製造方法 |
| JP5615488B2 (ja) * | 2008-06-30 | 2014-10-29 | Hoya株式会社 | 位相シフトマスクの製造方法 |
| WO2010038444A1 (ja) * | 2008-09-30 | 2010-04-08 | Hoya株式会社 | フォトマスクブランク、フォトマスク及びその製造方法 |
| JP5281362B2 (ja) * | 2008-10-31 | 2013-09-04 | Ｈｏｙａ株式会社 | フォトマスクブランク、フォトマスク及びその製造方法 |
| JP5363856B2 (ja) * | 2009-03-30 | 2013-12-11 | 富士フイルム株式会社 | パターン形成方法 |
| TWI553399B (zh) * | 2009-07-16 | 2016-10-11 | Hoya Corp | Mask base and transfer mask |
| JP5299139B2 (ja) * | 2009-07-22 | 2013-09-25 | 大日本印刷株式会社 | ナノインプリント用モールドの製造方法 |
| JP5606028B2 (ja) * | 2009-09-11 | 2014-10-15 | Ｈｏｙａ株式会社 | フォトマスクブランクおよびフォトマスクの製造方法 |
| KR101772993B1 (ko) * | 2010-02-05 | 2017-08-31 | 캐논 나노테크놀로지즈 인코퍼레이티드 | 고 콘트라스트 정렬 마크를 갖는 주형 |
| JP5599213B2 (ja) * | 2010-03-30 | 2014-10-01 | Ｈｏｙａ株式会社 | モールドの製造方法 |
| JP2011222834A (ja) * | 2010-04-12 | 2011-11-04 | Hoya Corp | ベーク処理装置、レジストパターン形成方法、フォトマスクの製造方法、及び、ナノインプリント用モールドの製造方法 |
| KR101691157B1 (ko) * | 2010-12-15 | 2017-01-02 | 삼성전자주식회사 | 나노임프린트용 스탬프 제조방법 |
-
2013
- 2013-01-11 KR KR1020147020510A patent/KR20140117429A/ko not_active Withdrawn
- 2013-01-11 JP JP2013555219A patent/JPWO2013111631A1/ja not_active Withdrawn
- 2013-01-11 WO PCT/JP2013/050488 patent/WO2013111631A1/ja not_active Ceased
- 2013-01-23 TW TW102102526A patent/TW201335971A/zh not_active IP Right Cessation
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2014
- 2014-07-23 US US14/338,825 patent/US20140335215A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20140335215A1 (en) | 2014-11-13 |
| JPWO2013111631A1 (ja) | 2015-05-11 |
| KR20140117429A (ko) | 2014-10-07 |
| WO2013111631A1 (ja) | 2013-08-01 |
| TWI562197B (enExample) | 2016-12-11 |
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