玖、發明說明： 【發明所屬之技術領域】 別是 =鑽:材料來製作模仁以增加心ΐ命其;: 效地降低奈米壓印製程之成本與時間。 I有 【先前技術】 ★隨著半導體製程進入奈米世代，傳統黃光微影製程所 而之波長已面臨其物理極限而受到極大的關，因此尋找 成本低廉且以及s量產能力的钱技術遂絲各界研究的 重點’其中奈米壓印技術挾其線寬低、成本低、量產 能力高等特性，被認定最有機會成為下—世代支微影技 術，相關之技術發展與專利申請也正快速地累積當中。 不米壓印微影(Nano-Imprint Lithography, NIL)技術應 用於半導體製私之》監騰始於Stephen Chou教授於1996年所 發表的兩篇論文，其所應用的原理與印章刻製十分類似。 請參考圖一 A至圖一 C，其係為標準將奈米壓印微影技術 應用於半導體製程中之示意圖。首先，先以微影蝕刻(例如 光罩技術、電子束餘刻、聚焦離子束蝕刻等)技術將所要轉 印的圖案製作於模仁11上，使模仁表面形成一凹凸排列之 特疋圖案’再將阻劑(Resist)材料12，如PMMA(Polymethyl methacrylate)等塗佈於元件基板13上。接著施以適當之溫 度與壓力，將模仁11以其具有圖案之表面壓印於阻劑材料 1224078 =上’則模仁丨丨上之_遂可轉印至阻赌料上。以 代，統微影製程的好處是’模仁的製作可利用電子束 加壓印製的流程亦可加速製程速率；此外， =複使用，比起-般傳統光罩之生命週期要長， 大1降低生產成本。 ❿ 2 ’模仁的製作屬於超精密技術，以電子核刻技術 進仃勢將耗費大量的時間與成本，而壓印過程中與不同材 料接觸甚至是碰撞之結果難免造賴㈣磨損，若模仁抗 磨性太差而造成需要製作大量模仁來替換磨損的模仁，則 必將造成整個奈米壓印微影應用上的限制。此外，壯壓 印於阻劑材料後而取出時，若模仁本身材料與該阻劑材料 之表面作用力過大，則將造成模仁沾附過多的阻劑材料， ^ 了造成產品尺寸的不穩定外，處理模仁表面的雜質亦將 化費額外的時間與成本。因此，如何製作抗磨性佳且脫模 容易的模仁便為各家研究的重點所在。 、 2001 年 IEEE 之 Microprocesses and Nanotechnology Conference 中，日本 〇Saka Prefecture University 研究團隊提 出了將石英和鎳塗佈於矽表面之模仁。此外，Τ〇Κγ〇 University of Science 的 Υ· Tokano 亦提出以藍寶石(Sapphire) 作為模仁材料的解決方案。而請參考圖二，其係為石英、 藍寶石、矽以及鑽石材料之各項物理特性之比較，明顯地， 鑽石無論是在硬度、張力、熱傳導與熱膨脹係數上幾乎均 優於其他幾種材料。因此，本發明遂利用鑽石材料作為模 6 t之主要部分，即可達到高抗磨性與魏雛之目的，此 配合減之製程更可_節錢本並提高生產效能之 【發明内容】 本發明之主要目的係提供一種壓印用模仁之製程方法 與結構’其係_鑽石材料作為模仁_之主體， 磨耗性佳與容易脫模之功效。 本發明之又-目的係提供一種壓印用模仁之製程方法 與結構，其係彻侧物對光阻與伽材料之㈣選擇比 不同的特性’可直接對鑽石表面進行_彳製程，以達減少 模仁製造程序並降低生產成本之功效。 為達上述之目的，本發明一種壓印用模仁之結構係包 括有-基板及-鑽;5類薄騎，此鑽石類_層係形成於 基板上方’ JL該鑽石類薄膜層之表面係具有凹凸排列之一 特定圖案。 為達上述之目的，本發明一種壓印用模仁之製程方 法，其步驟係包括有： (a) 提供一基板； (b) 於該基板上方形成一鑽石類薄膜層； (c) 於該鑽石薄膜層上方形成一能量束光阻薄膜層； (Φ利用一能量束微影系統，於該能量束光阻薄膜層上形成 具有特定圖案之一光阻遮罩； (e)於該鑽石類薄膜層表面無該光阻遮罩覆蓋之區域，利用 一钱刻方式向下形成特定深度之凹槽； (0f亥光娜鮮去除，職鑽石_縣之表面遂可形 之ίί特定排列之凹凸圖形’其係可作為屋印技術所需 【實施方式】 段：3出1交佳實施例以詳細說明本發明 往失^ 一達成功效以及本發明的其他技術特徵。 之製ί 圖三D ’其係為本發明—_印用模仁 f方摘最佳實補。如騎示，首 31，此基板31可依昭夺乎’、'、 土板 而有不同的㈣、SiT\ p所_之不同領域 二擇，例如石夕晶圓、石英、藍寶石、鶴、 類薄膜層可^料於絲3丨上林成一鑽石 DLC)物質/、二錢石及類物仏―0η， DIX)物f等’而卿成之方式則可 0 則，在奈米級之半導二度為原 他方式所形成之鑽石類薄膜層32此二=;， :節太/製造:責的材料使用量 待鑽石類薄膜層32形成 :::r_33,其係用來作== 所一較佳者’此能量束 1224078 KRS-XE阻劑，並於其中摻雜適量之二氧化矽。圖四係為於 KRS-XE阻劑中摻入不同比例之二氧化矽後與鑽石材料蝕 刻速率的比較表，其原始資料係出自於期刊Micr〇electr〇nic Engineering 63 (2002) 39M03。明顯地，當二氧化石夕摻入 KRS-XE阻劑之比例超過15%之後，蝕刻物質對其蝕刻率相 較於鑽石材料將可明顯變小，其為可應用於本發明中 之特性。 接著利用一能量束微影系統4對能量束光阻薄膜層 進行顯影程序’其中該能量束微料統4所使用之能量束可 以為電子束、雷射、聚鱗子束科，·发明 、 Explanation of the invention: [Technical field to which the invention belongs] Other = Diamond: Material to make mold kernels to increase heart fatness; Effectively reduce the cost and time of nano-imprinting process. I have [previous technology] ★ As the semiconductor process enters the nano-generation, the wavelength of the traditional yellow light lithography process has faced its physical limit and has been greatly affected. Therefore, it is necessary to find a low-cost and high-volume production technology. The focus of research from all walks of life, among which nano-imprint technology, with its low line width, low cost, and high production capacity, has been identified as the best opportunity to become the next-generation branch lithography technology, and related technology development and patent applications are also fast. Land accumulation. The application of Nano-Imprint Lithography (NIL) technology to the production of semiconductors is based on two papers published by Professor Stephen Chou in 1996. The principles applied are very similar to those of stamp making . Please refer to FIG. 1A to FIG. 1C, which are schematic diagrams of applying nano-imprint lithography technology to a semiconductor process as a standard. First, the pattern to be transferred is made on the mold core 11 by lithographic etching (such as photomask technology, electron beam etching, focused ion beam etching, etc.) technology, so that the surface of the mold core forms a special pattern with irregularities. 'Resist material 12 such as PMMA (Polymethyl methacrylate) is coated on the element substrate 13. Then, with appropriate temperature and pressure, the mold core 11 is embossed on the resist material with its patterned surface 1224078 = on ‘then the mold core 丨 丨 _ can then be transferred to the anti-gambling material. In generations, the advantage of the uniform lithography process is that the production of the mold core can be accelerated by the electron beam printing process, and the process rate can be accelerated; In addition, the reuse is longer than the life cycle of the traditional photomask. Big 1 reduces production costs. ❿ 2 'The production of mold core belongs to ultra-precision technology. It will take a lot of time and cost to advance with electronic engraving technology. The contact with different materials or even the impact of embossing will inevitably result in wear and tear. The wear resistance of the kernel is too poor and it is necessary to make a large number of mold kernels to replace the worn mold kernels, which will inevitably cause the limitation of the entire nanoimprint lithography application. In addition, if the material of the mold kernel itself and the surface of the resist material are excessively imprinted after being imprinted on the resist material, excessive mold material will be attached to the mold kernel, which may cause product size to vary. In addition to stability, processing the impurities on the surface of the mold kernel will also cost extra time and cost. Therefore, how to make a mold with good abrasion resistance and easy demolding is the focus of various researches. In 2001, at the IEEE Microprocesses and Nanotechnology Conference, a Japanese research team at Japan ’s Saka Prefecture University proposed a mold that coated quartz and nickel on a silicon surface. In addition, Υ · Tokano of TOKOKY University of Science also proposed a solution using Sapphire as the mold core material. Please refer to Figure 2. It is a comparison of the physical properties of quartz, sapphire, silicon and diamond materials. Obviously, diamonds are almost better than other materials in terms of hardness, tension, thermal conductivity and thermal expansion coefficient. Therefore, the present invention then uses the diamond material as the main part of the mold 6 t, which can achieve the purpose of high abrasion resistance and Wei Chu. This combination can reduce the production process _ saving money and improving production efficiency [Inventive Content] The main purpose is to provide a manufacturing method and structure of the mold core for embossing. Its system _ diamond material as the main body of the mold core _ has good abrasion resistance and easy mold release. Another object of the present invention is to provide a manufacturing method and structure of a mold core for imprinting, which is based on the characteristics of different selection ratios of the photoresist and the photoresist on the photoresist and can be directly processed on the diamond surface to achieve The effect of reducing the mold manufacturing process and reducing the production cost. In order to achieve the above-mentioned object, the structure of a mold core for imprinting according to the present invention includes -substrate and -drill; 5 types of thin rides, and this diamond-like layer is formed above the substrate. JL The surface of the diamond-like film layer has A specific pattern of embossing. In order to achieve the above object, a method for manufacturing a mold core for imprinting according to the present invention includes the steps of: (a) providing a substrate; (b) forming a diamond-like thin film layer on the substrate; (c) forming the diamond on the substrate; An energy beam photoresist film layer is formed above the film layer; (Φ utilizes an energy beam lithography system to form a photoresist mask with a specific pattern on the energy beam photoresist film layer; (e) on the diamond film There is no area covered by the photoresist mask on the surface of the layer, and a groove of a certain depth is formed downward using a coin engraving method; (0f Haiguangna is removed, and the surface of the diamond _ county can be shaped into a specific array of bumps. 'It can be used as a house printing technology. [Embodiment] Paragraph: 3 out 1 good examples to explain in detail the loss of the present invention ^ to achieve the effect and other technical features of the present invention. This is the present invention—the best practical supplement for the printed mold core f. For example, the first 31, this substrate 31 can be different depending on the ',', soil plate, SiT \ p_ Choice of different fields, such as Shi Xi wafer, quartz, sapphire, crane, thin The layer can be expected from the silk 3 丨 Shanglin Chengyi Diamond DLC) Substance /, Dichanite and similar objects 仏 -0η, DIX) Object f, etc. ', and the method of Chengcheng can be 0, in the nanometer semi-conductor Diamond-like thin film layer 32 formed twice by the original method =======, ====================================================================================================================================================================================================================================================================== == A better one is this energy beam 1224078 KRS-XE resist, which is doped with an appropriate amount of silicon dioxide. Figure 4 is a comparison table of the etching rate of diamond materials with different proportions of silicon dioxide added to the KRS-XE resist. The original data is from the journal Micrólectronic Engineering 63 (2002) 39M03. Obviously, when the proportion of the KRS-XE resist added to the stone dioxide exceeds 15%, the etching rate of the etching substance will be significantly smaller than that of the diamond material, which is a characteristic applicable to the present invention. Next, an energy beam lithography system 4 is used to perform the development process on the energy beam photoresist film layer. ′ The energy beam used in the energy beam micromaterial system 4 can be an electron beam, a laser, or a polyfamily beam family, ·
案之尺寸可輕易達到奈米等級，使得本發明之J 膜^ 貫祕。#顯影步驟完錢，該能量束光阻薄 、曰逐可喊具有特㈣案之—植料33丨。再利用乾 =之方式5 ’例如反應性離子_法收_丨〇n段The size of the case can easily reach the nano level, which makes the J film of the present invention ^ secretive. #Developing step is finished, the energy beam has a thin photoresistance, and it can be called to have a special case—plant material 33 丨. Reuse dry = way 5 ’such as reactive ions_ 法 收 _ 丨 〇n paragraph
層32表面的圖案化製程，由於鑽石 岁丨^哲l面覆蓋具有特雜狀光阻鮮33卜利用敍 mr捕與光_懸_祕差魏大之特 深度之^槽32^遮If1覆蓋之區域將可輕易被钱刻成適當 擋姓刻物ΐ之^^#光阻料331f蓋之區酬可有效阻 表面上m二钱效果。如此一來即可在鑽石類薄膜層32 331移除後，mg且遮罩331之圖案。最後將光阻遮罩 的鑽石材料模仁。于1表面具有一特定排列之凹凸圖形322 本毛明所製造之模仁除了可應奈米壓印技術外， 9 似之_製程中。傳統利用電子束微影 母體加工形成表面圖案之方式不但耗時且 力’而本發鄕配能量賴影與她 :其f流程’利用能量束微影方式實現奈 位’再用魏财狀速則形成 :=值責的能量束微職使用率，使其更具^ A總之，以上所述者，僅為本發明之較佳實施例而已當 不J以之限定本發騎實施之細。大驗本發明申請i ，扼圍所作之均等變化與修飾’皆應仍屬於本發明專利涵 盍之範_’歸f審查委㈣鑑，並聽准，是所至禱。 【圓示簡單說明】 一本發明之前述與其他目的、特徵及優點，在配合下列 說明及所附圖示後，將可獲得更好的理解。 圖一 A至圖一 C為將奈米壓印微影技術應用於半導體製 程中之示意圖。 圖一係為石英、藍寶石、矽以及鑽石材料之各項物理 特性之比較表。 =圖二A至圖二D為本發明一種壓印用模仁之製程方法的 最佳實施例示意圖。 圖四為KRS-XE阻劑中摻入不同比例之二氧化矽後與 鑽石材料蝕刻速率的比較表。 1224078 圖號說明： 11- 模仁 12- 可撓性材料 13- 元件基板 31 -基板 32- 鑽石類薄膜層 321- 凹槽 322- 特定排列之圖形 33- 能量束光阻薄膜層 331-光阻遮罩 4- 能量束微影系統 5- 乾蝕刻方式The patterning process on the surface of layer 32. Because the diamond is covered, the surface is covered with a special hybrid photoresist. Using the mr trap and light _ suspension _ secret difference Wei Dazhi's special depth ^ slot 32 ^ covers the area covered by If1. It can be easily carved by money into a proper block engraving ^^ # photoresist material 331f cover can effectively block the effect of money on the surface. In this way, after the diamond-like thin film layer 32 331 is removed, the pattern of mg and mask 331 can be masked. Finally, the diamond mask of the photoresist mask is used. There is a specific arrangement of concave-convex patterns on the 1 surface. 322 The mold core made by Mao Ming is compatible with nano-imprint technology, and it is similar to that in the manufacturing process. The traditional method of using electron beam lithography to process the surface pattern is not only time-consuming and forceful, but the hair is matched with energy Lai Ying and her: the f process is to use the energy beam lithography to achieve the Nai position, and then it is formed by Wei Caishui : = Responsibility of the energy beam micro duty utilization rate, making it more ^ A In short, the above is only a preferred embodiment of the present invention and should not be used to limit the details of the implementation of the hair riding. Examining the application of the present invention i, the equal changes and modifications made around it should all still belong to the scope of the patent concept of the present invention, which belongs to the review committee and is accurate. [Circumscription Brief Description] The foregoing and other objects, features, and advantages of the present invention will be better understood after cooperating with the following description and accompanying drawings. Figures A through C show the application of nano-imprint lithography to semiconductor processes. Figure 1 is a comparison table of the physical properties of quartz, sapphire, silicon and diamond materials. Figures 2A to 2D are schematic diagrams of the preferred embodiment of a method for manufacturing a mold core for imprinting according to the present invention. Figure 4 is a comparison table of the etch rate of diamond materials with different proportions of silicon dioxide in the KRS-XE resist. 1224078 Description of drawing number: 11- Mould 12- Flexible material 13- Element substrate 31-Substrate 32-Diamond film layer 321-Groove 322-Specific arrangement pattern 33-Energy beam photoresist film layer 331-Photoresist Mask 4- Energy Beam Lithography System 5- Dry Etching