TW201330050A - 基板處理裝置 - Google Patents
基板處理裝置 Download PDFInfo
- Publication number
- TW201330050A TW201330050A TW101132339A TW101132339A TW201330050A TW 201330050 A TW201330050 A TW 201330050A TW 101132339 A TW101132339 A TW 101132339A TW 101132339 A TW101132339 A TW 101132339A TW 201330050 A TW201330050 A TW 201330050A
- Authority
- TW
- Taiwan
- Prior art keywords
- discharge
- inflow
- processing apparatus
- support
- substrate processing
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 238000001816 cooling Methods 0.000 claims abstract description 33
- 239000000112 cooling gas Substances 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229920003002 synthetic resin Polymers 0.000 claims description 3
- 239000000057 synthetic resin Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- -1 polytetrafluoroethylene Polymers 0.000 claims description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 2
- 238000012423 maintenance Methods 0.000 abstract description 4
- 230000008439 repair process Effects 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110091425A KR101275496B1 (ko) | 2011-09-08 | 2011-09-08 | 기판 처리 장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201330050A true TW201330050A (zh) | 2013-07-16 |
Family
ID=47832697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101132339A TW201330050A (zh) | 2011-09-08 | 2012-09-05 | 基板處理裝置 |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR101275496B1 (ko) |
| CN (1) | CN103782367B (ko) |
| TW (1) | TW201330050A (ko) |
| WO (1) | WO2013036018A2 (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101512330B1 (ko) * | 2013-06-11 | 2015-04-15 | 주식회사 테라세미콘 | 기판처리장치 |
| KR102401742B1 (ko) * | 2015-09-17 | 2022-05-25 | 주성엔지니어링(주) | 활성가스라인의 온도조절이 가능한 챔버세정장치 |
| KR102423268B1 (ko) * | 2018-02-20 | 2022-07-21 | 주식회사 원익아이피에스 | 기판처리 장치 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06244095A (ja) * | 1993-02-12 | 1994-09-02 | Dainippon Screen Mfg Co Ltd | 基板冷却装置 |
| JP3912208B2 (ja) * | 2002-02-28 | 2007-05-09 | 東京エレクトロン株式会社 | 熱処理装置 |
| KR100716456B1 (ko) * | 2004-12-29 | 2007-05-10 | 주식회사 에이디피엔지니어링 | 플라즈마 처리장치 |
| JP4878830B2 (ja) * | 2005-12-12 | 2012-02-15 | 株式会社日立国際電気 | 基板処理装置 |
| JP5015847B2 (ja) * | 2008-04-07 | 2012-08-29 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法、プログラムならびに記録媒体 |
| KR101094279B1 (ko) * | 2009-11-06 | 2011-12-19 | 삼성모바일디스플레이주식회사 | 가열 수단 및 이를 포함하는 기판 가공 장치 |
-
2011
- 2011-09-08 KR KR1020110091425A patent/KR101275496B1/ko active IP Right Grant
-
2012
- 2012-09-04 CN CN201280043147.8A patent/CN103782367B/zh active Active
- 2012-09-04 WO PCT/KR2012/007080 patent/WO2013036018A2/ko active Application Filing
- 2012-09-05 TW TW101132339A patent/TW201330050A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR101275496B1 (ko) | 2013-06-17 |
| KR20130027902A (ko) | 2013-03-18 |
| CN103782367B (zh) | 2017-02-08 |
| CN103782367A (zh) | 2014-05-07 |
| WO2013036018A2 (ko) | 2013-03-14 |
| WO2013036018A3 (ko) | 2013-05-02 |
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