TW201330050A - Apparatus for processing substrate - Google Patents
Apparatus for processing substrate Download PDFInfo
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- TW201330050A TW201330050A TW101132339A TW101132339A TW201330050A TW 201330050 A TW201330050 A TW 201330050A TW 101132339 A TW101132339 A TW 101132339A TW 101132339 A TW101132339 A TW 101132339A TW 201330050 A TW201330050 A TW 201330050A
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- processing apparatus
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- substrate processing
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- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 238000001816 cooling Methods 0.000 claims abstract description 33
- 239000000112 cooling gas Substances 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229920003002 synthetic resin Polymers 0.000 claims description 3
- 239000000057 synthetic resin Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- -1 polytetrafluoroethylene Polymers 0.000 claims description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 2
- 238000012423 maintenance Methods 0.000 abstract description 4
- 230000008439 repair process Effects 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
本發明係有關一種在形成腔室的本體外側設置冷卻手段之基板處理裝置。 The present invention relates to a substrate processing apparatus in which a cooling means is provided outside a body forming a chamber.
基板處理裝置係用於平面顯示器的製造時，大致區分為蒸鍍(Vapor Deposition)裝置及退火(Annealing)裝置。 When the substrate processing apparatus is used for the manufacture of a flat panel display, it is roughly classified into a vapor deposition apparatus and an annealing apparatus.
蒸鍍裝置係為形成構成平面顯示器的核心構成之透明傳導層、絕緣層、金屬層或矽層之裝置，有像是LPCVD(Low Pressure Chemical Vapor Deposition；低壓化學氣相沈積)或PECVD(Plasma Enhanced Chemical Vapor Deposition；電漿輔助化學氣相沈積)等的化學氣相蒸鍍裝置、及濺鍍(Sputtering)等的物理氣相蒸鍍裝置。 The vapor deposition device is a device for forming a transparent conductive layer, an insulating layer, a metal layer or a germanium layer which constitutes a core of a flat panel display, such as LPCVD (Low Pressure Chemical Vapor Deposition) or PECVD (Plasma Enhanced). Chemical Vapor Deposition; chemical vapor deposition apparatus such as plasma assisted chemical vapor deposition, and physical vapor deposition apparatus such as sputtering.
再者，退火裝置係為在基板蒸鍍膜後，提升被蒸鍍的膜特性之裝置，其係為使被蒸鍍的膜結晶化或相變化之熱處理裝置。 Further, the annealing device is a device for elevating the film characteristics of the vapor deposited film after vapor deposition of the substrate, and is a heat treatment device for crystallizing or phase changing the vapor deposited film.
一般而言，熱處理裝置係有將1塊基板進行熱處理之葉片式(Single Substrate Type)、及將複數塊基板進行熱處理之批次式(Batch Type)。葉片式基板處理裝置係有構成簡單之優點，但是也有生產性低下之缺點，因此在大量生產方面大多使用批次式基板處理裝置。 In general, the heat treatment apparatus includes a single substrate type in which one substrate is heat-treated, and a batch type in which a plurality of substrates are heat-treated. The vane type substrate processing apparatus has the advantage of being simple in structure, but it also has the disadvantage of low productivity. Therefore, a lot of substrate processing apparatuses are often used in mass production.
基板處理裝置之基板的處理空間，也就是腔室係包 含：形成有內部之本體；設置在前述本體內部，支撐基板之托架；設置在前述本體內部，產生前述基板的處理所必要的熱能之複數個加熱器；用以將熱處理過的基板冷卻，在冷卻氣體流入前述本體內部後再排出之冷卻手段等。 The processing space of the substrate of the substrate processing apparatus, that is, the chamber package The invention comprises: a body formed with an inner portion; a bracket disposed inside the body to support the substrate; a plurality of heaters disposed inside the body to generate thermal energy necessary for processing of the substrate; and a substrate for heat treating the substrate Cooling means, a cooling means for discharging the cooling gas after flowing into the inside of the body, and the like.
如前述之習知的基板處理裝置係將前述冷卻手段設置在前述本體的內部。 The substrate processing apparatus as described above has the cooling means disposed inside the body.
如此一來，有難以在前述本體設置前述冷卻手段，並且難以維修設置在前述本體之前述冷卻手段之缺點。 As a result, it is difficult to provide the above-described cooling means in the main body, and it is difficult to repair the above-described cooling means provided in the main body.
本發明係為了解決前述所示之習知技術問題予以開發出來者，其目的係為提供一種將冷卻基板之冷卻手段設置在本體外側，而使設置簡單化，維修簡單之基板處理裝置。 The present invention has been developed in order to solve the above-mentioned conventional technical problems, and an object thereof is to provide a substrate processing apparatus which is provided with a cooling means for cooling a substrate on the outside of the main body, and which is simple in installation and simple in maintenance.
為了達成前述目的之關於本發明之基板處理裝置，其係包含：本體，係在內部形成處理基板的空間，也就是腔室；加熱器，位於前述本體內部，並且產生前述基板的處理所必要的熱能；及冷卻手段，設置在前述本體外面，並且將用以使處理過的前述基板冷卻之冷卻氣體流入前述本體內部後，排出到前述本體外部。 A substrate processing apparatus according to the present invention for achieving the above object, comprising: a body, a space in which a processing substrate is formed inside, that is, a chamber; a heater located inside the body and necessary for processing the substrate The heat energy and the cooling means are disposed outside the body, and the cooling gas for cooling the processed substrate is introduced into the body and discharged to the outside of the body.
關於本發明之基板處理裝置係將處理過的基板進行強制冷卻之冷卻手段支撐設置在形成腔室之本體的外面。因 此，可易於將冷卻手段設置於本體，達到維修容易之效果。 In the substrate processing apparatus of the present invention, the cooling means for forcibly cooling the processed substrate is supported on the outside of the body forming the chamber. because Therefore, the cooling means can be easily disposed on the body, and the maintenance is easy.
圖1係為關於本發明之一實施形態之基板處理裝置的立體圖。 Fig. 1 is a perspective view of a substrate processing apparatus according to an embodiment of the present invention.
圖2係為圖1所示之冷卻手段的立體圖。 Figure 2 is a perspective view of the cooling means shown in Figure 1.
圖3係為圖2所示之冷卻手段的主要部份擴大圖。 Fig. 3 is an enlarged view of a main part of the cooling means shown in Fig. 2.
後述之關於本發明的詳細說明係參照以能夠實施本發明之特定的實施形態為例示的添附圖面。此等實施形態係以同業者能夠實施本發明的方式充分詳細說明。本發明之多種實施形態雖然相互不同，但是可以理解的是並不需要相互排他。例如，在此所記載之特定形狀、特定構造及特性係與一實施形態相關聯，並且在不脫離本發明的精神及範圍下，可以藉由其他實施形態予以實現。又，各個被揭示之實施形態內的個別構成要素的位置或配置係在不脫離本發明的精神及範圍下，可以理解為能夠進行變更。因此，後述之詳細說明並沒有限定的意味，本發明的範圍若是可以適當說明的話，連同與其等申請專利範圍所主張者均等之所有範圍只利用添附的申請專利範圍予以限定。圖面所示之實施形態的長度、面積、厚度及形態係為了方便說明也會有誇張表現的情形。 The detailed description of the present invention will be described with reference to the accompanying drawings, which are exemplified by the specific embodiments of the invention. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. While the various embodiments of the invention are different from each other, it will be understood that it is not necessary to mutually exclusive. For example, the specific shapes, the specific structures, and the characteristics described herein may be associated with an embodiment, and may be implemented by other embodiments without departing from the spirit and scope of the invention. It is to be understood that the position and arrangement of the individual components in the disclosed embodiments can be changed without departing from the spirit and scope of the invention. Therefore, the scope of the present invention is defined by the scope of the appended claims, and the scope of the present invention is defined by the scope of the appended claims. The length, area, thickness, and morphology of the embodiment shown in the drawings are exaggerated for convenience of explanation.
以下，參照添附圖面詳細說明關於本發明之一實施形態之基板處理裝置。 Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
所謂基板處理，其係包含：加熱及冷卻基板之工程；用以在基板上蒸鍍規定的膜之所有工程；及用以將被蒸鍍在基板上的膜進行退火、結晶化或相變化之所有熱處理工程。再者，基板的材質係沒有特別限制，能夠以玻璃、塑膠、聚合物、矽晶圓或不鏽鋼板等材質而形成。 The substrate processing includes: heating and cooling the substrate; all processes for vapor deposition of a predetermined film on the substrate; and annealing, crystallization, or phase change of the film evaporated on the substrate. All heat treatment works. Further, the material of the substrate is not particularly limited, and it can be formed of a material such as glass, plastic, polymer, germanium wafer or stainless steel plate.
圖1係為關於本發明之一實施形態之基板處理裝置的立體圖。 Fig. 1 is a perspective view of a substrate processing apparatus according to an embodiment of the present invention.
如圖示，關於本實施形態之基板處理裝置係包含構成外觀之約略直六面體形狀的本體110。本體110內部係形成處理基板50的空間，也就是腔室111，腔室111係設計為密閉的空間。本體110係不只是直六面體形狀，可以根據基板50的形狀而形成為多種形狀。 As shown in the figure, the substrate processing apparatus according to the present embodiment includes a main body 110 which is approximately a straight hexahedron shape constituting an appearance. The inside of the body 110 forms a space for processing the substrate 50, that is, the chamber 111, and the chamber 111 is designed as a sealed space. The body 110 is not limited to a straight hexahedron shape, and may be formed in various shapes depending on the shape of the substrate 50.
在本體110的前面係形成開放部，前述開放部係利用設置在本體110前面的門扉113進行開關。在打開門扉113而使腔室111與外部連通的狀態下，利用機器臂(未圖示)等支撐搭載支撐有基板50之托架120並將基板50裝載到腔室111。再者，在關閉門扉113而使腔室111成為密閉的狀態下，進行基板50處理。 An open portion is formed in front of the body 110, and the open portion is opened and closed by a sill 113 provided in front of the body 110. In a state where the threshold 113 is opened and the chamber 111 is communicated with the outside, the bracket 120 on which the substrate 50 is supported is supported by a robot arm (not shown) or the like, and the substrate 50 is loaded into the chamber 111. Further, the substrate 50 is processed while the threshold 113 is closed and the chamber 111 is sealed.
本體110的內部係設置複數個支架130。於支架130在上下具有間隔地支撐設置托架120，於托架120搭載支撐基板50。再者，在托架120與托架120之間的部位中係設置產生處理基板50所必要的熱能之複數個加熱器(未圖示)。 A plurality of brackets 130 are disposed inside the body 110. The bracket 130 is supported by the bracket 130 at intervals therebetween, and the support substrate 50 is mounted on the bracket 120. Further, a plurality of heaters (not shown) that generate thermal energy necessary for processing the substrate 50 are provided in a portion between the bracket 120 and the bracket 120.
裝載到腔室111並處理過的基板50係由於為高溫狀態，若是沒將其冷卻到規定溫度的話，無法從腔室111進行 卸載。然而，若是要將基板50自然冷卻到規定溫度的話，由於會耗費長時間，因此將基板50強制冷卻到規定溫度。 The substrate 50 loaded in the chamber 111 and processed is in a high temperature state, and cannot be cooled from the chamber 111 if it is not cooled to a predetermined temperature. Uninstall. However, if the substrate 50 is naturally cooled to a predetermined temperature, the substrate 50 is forcibly cooled to a predetermined temperature because it takes a long time.
在關於本實施形態之基板處理裝置中係設置將處理過的基板50強制冷卻之冷卻手段。 In the substrate processing apparatus of the present embodiment, a cooling means for forcibly cooling the processed substrate 50 is provided.
參照圖1~圖3說明此部份。圖2係為圖1所示之冷卻手段的立體圖，圖3係為圖2所示之冷卻手段的主要部份擴大圖。 This section will be described with reference to Figs. Fig. 2 is a perspective view of the cooling means shown in Fig. 1, and Fig. 3 is an enlarged view of a main part of the cooling means shown in Fig. 2.
如圖示，在本體110的左側面中係複數形成有呈行列狀之複數個第1支撐孔115，在右側面中係形成有分別與第1支撐孔115對向地形成，且呈行列狀之複數個第2支撐孔117。 As shown in the figure, a plurality of first support holes 115 are formed in a plurality of rows on the left side surface of the main body 110, and are formed in the right side surface so as to be opposed to the first support holes 115, and are arranged in a matrix. A plurality of second support holes 117.
前述冷卻手段係設置在本體110的外面，並且將氮氣等冷卻氣體流入到本體110內部在腔室111將處理過的基板50冷卻後，再排出到本體110的外部。前述冷卻手段係包含：支撐在本體110的左側外面並且將冷卻氣體流入到本體110內部之流入單元160、及支撐在本體110的右側外面，並且將流入到本體110內部使基板50冷卻之冷卻氣體排出到本體110外部之排出單元170。 The cooling means is disposed outside the body 110, and a cooling gas such as nitrogen gas flows into the inside of the body 110. After the processed substrate 50 is cooled in the chamber 111, it is discharged to the outside of the body 110. The foregoing cooling means includes an inflow unit 160 supported outside the left side of the body 110 and flowing cooling gas into the inside of the body 110, and a cooling gas supported on the outside of the right side of the body 110 and flowing into the inside of the body 110 to cool the substrate 50. The discharge unit 170 is discharged to the outside of the body 110.
流入單元160係包含：支撐在本體110的左側外面並且使冷卻氣體流入之流入管161；及左側部位為與流入管161連通，右側部位為插入支撐在第1支撐孔115而位於本體110的內部，並且從流入管161接受冷卻氣體的傳達而排出到本體110內部之排出噴嘴163。 The inflow unit 160 includes an inflow pipe 161 that supports the outside of the left side of the body 110 and allows the cooling gas to flow therein, and a left portion that communicates with the inflow pipe 161, and a right portion that is inserted into the first support hole 115 and is located inside the body 110. And, the discharge pipe 163 is discharged to the inside of the main body 110 by receiving the cooling gas from the inflow pipe 161.
此時，流入管161係配置成複數個且從本體110的前面側朝向後面側相互具有間隔，排出噴嘴163係設置成複數個 連通至1個流入管161且在上下具有間隔。 At this time, the inflow pipes 161 are arranged in plural numbers and are spaced apart from each other from the front side to the rear side of the main body 110, and the discharge nozzles 163 are provided in plural numbers. It is connected to one inflow pipe 161 and has a space on the upper and lower sides.
本體110的左側外面係結合第1支撐承座165，第1支撐承座165係支撐流入管161的下側部位。當詳細說明時，第1支撐承座165係形成貫穿孔165a，流入管161的下側部位係貫穿貫穿孔165a。再者，流入管161下側部位的外周面係形成與第1支撐承座165結合之結合片161a。因為第1支撐承座165與本體110的左側外面結合，且流入管161以結合片161a為媒介而與第1支撐承座165結合，因此流入管161係可以堅固設置在本體110的左側外面。 The outer side of the left side of the main body 110 is coupled to the first support socket 165, and the first support socket 165 supports the lower portion of the inflow pipe 161. When the details are described, the first support socket 165 is formed with a through hole 165a, and the lower portion of the inflow pipe 161 is inserted through the through hole 165a. Further, the outer peripheral surface of the lower portion of the inflow pipe 161 is formed with a joint piece 161a that is coupled to the first support socket 165. Since the first support socket 165 is coupled to the left outer side of the body 110, and the inflow pipe 161 is coupled to the first support socket 165 by the coupling piece 161a, the inflow pipe 161 can be firmly disposed outside the left side of the body 110.
本體110的左側外面係結合有在內部形成流入路167a的第1支撐構件167。再者，複數個流入管161的下端部係分別支撐在第1支撐構件167，且同時分別與流入路167a連通。 The first support member 167 having the inflow path 167a formed therein is coupled to the outer left side of the body 110. Further, the lower end portions of the plurality of inflow pipes 161 are respectively supported by the first support member 167 and simultaneously communicate with the inflow path 167a.
複數個流入管161係因為以流入路167a為媒介而相互連通，若是在第1支撐構件167的下側部位注入冷卻氣體的話，冷卻氣體係透過流入路167a而流入各個流入管161。因此，使冷卻氣體的注入簡單化。再者，因為在與本體110結合之第1支撐構件167支撐流入管161，因此流入管161係可以更進一步堅固設置。 The plurality of inflow pipes 161 communicate with each other via the inflow path 167a. When the cooling gas is injected into the lower portion of the first support member 167, the cooling gas system passes through the inflow passage 167a and flows into the respective inflow pipes 161. Therefore, the injection of the cooling gas is simplified. Furthermore, since the first support member 167 coupled to the body 110 supports the inflow pipe 161, the inflow pipe 161 can be further sturdy.
左側部位為與流入管161連通之排出噴嘴163的右側部位係插入支撐在第1支撐孔115。然而，若流入管161為完全剛體的話，根據製造及組裝時的誤差而難以將排出噴嘴163插入到第1支撐孔115。為了解決這樣的問題，在流入管161中係形成皺縮部161b。如此一來，因為流入管161可以伸縮或彎曲，即使在流入單元160有誤差也可以將排出噴嘴163 容易地插入到第1支撐孔115。 The left side portion is inserted into and supported by the first support hole 115 at the right side portion of the discharge nozzle 163 that communicates with the inflow pipe 161. However, if the inflow pipe 161 is completely rigid, it is difficult to insert the discharge nozzle 163 into the first support hole 115 in accordance with an error in manufacturing and assembly. In order to solve such a problem, the crimped portion 161b is formed in the inflow pipe 161. In this way, since the inflow pipe 161 can be expanded or contracted, the discharge nozzle 163 can be discharged even if there is an error in the inflow unit 160. It is easily inserted into the first support hole 115.
排出單元170係包含：支撐在本體110的右側外面，並且使冷卻氣體排出之排出管171；及左側部位為插入支撐在第2支撐孔117而位於本體110內部，右側部位為與排出管171連通，並且吸入已流入到本體110內部的冷卻氣體而傳達給排出管171之吸入噴嘴173。 The discharge unit 170 includes a discharge pipe 171 supported on the outer side of the right side of the main body 110 and discharging the cooling gas, and a left side portion which is inserted and supported in the second support hole 117 and located inside the main body 110, and the right side portion is connected to the discharge pipe 171. And the cooling gas that has flowed into the inside of the body 110 is sucked into the suction nozzle 173 of the discharge pipe 171.
此時，排出管171係配置成複數個且從本體110的前面側朝向後面側相互具有間隔，吸入噴嘴173係設置成複數個連通至1個排出管171且在上下具有間隔。 At this time, the discharge pipes 171 are disposed in plural numbers and are spaced apart from each other from the front side to the rear side of the main body 110, and the suction nozzles 173 are provided in plural numbers to each of the discharge pipes 171 and have a space therebetween.
本體110的右側外面係結合第2支撐承座175，第2支撐承座175係支撐排出管171的下側部位。當詳細說明時，第2支撐承座175係形成貫穿孔175a，排出管171的下側部位係貫穿貫穿孔175a。再者，排出管171下側部位的外周面係形成與第2支撐承座175結合之結合片171a。因為第2支撐承座175與本體110的右側外面結合，且排出管171與第2支撐承座175結合，因此排出管171係可以堅固設置在本體110的右側外面。 The outer right side of the main body 110 is coupled to the second support socket 175, and the second support socket 175 supports the lower portion of the discharge pipe 171. When the details are described, the second support socket 175 is formed with a through hole 175a, and the lower portion of the discharge pipe 171 is inserted through the through hole 175a. Further, the outer peripheral surface of the lower portion of the discharge pipe 171 is formed with a joint piece 171a that is coupled to the second support socket 175. Since the second support socket 175 is coupled to the right outer side of the body 110, and the discharge tube 171 is coupled to the second support socket 175, the discharge tube 171 can be firmly disposed outside the right side of the body 110.
本體110的右側外面係結合有在內部形成排出路177a的第2支撐構件177。再者，複數個排出管171的下端部係分別支撐在第2支撐構件177，且同時分別與排出路177a連通。 A second support member 177 having a discharge path 177a formed therein is coupled to the outer right side of the body 110. Further, the lower end portions of the plurality of discharge pipes 171 are respectively supported by the second support members 177, and simultaneously communicate with the discharge passages 177a.
複數個排出管171係因為以排出路177a為媒介而相互連通，從複數個排出管171排出之冷卻氣體係透過第2支撐構件177的下側部位排出。因此，使被排出的冷卻氣體之處理容易化。再者，因為在與本體110結合之第2支撐構件177 支撐排出管171，因此排出管171係可以更進一步堅固設置。 The plurality of discharge pipes 171 communicate with each other via the discharge passage 177a, and the cooling gas system discharged from the plurality of discharge pipes 171 is discharged through the lower portion of the second support member 177. Therefore, the treatment of the discharged cooling gas is facilitated. Furthermore, because of the second support member 177 combined with the body 110 The discharge pipe 171 is supported, so that the discharge pipe 171 can be further sturdy.
右側部位為與排出管171連通之吸入噴嘴173的左側部位係插入支撐在第2支撐孔117。然而，若排出管171為完全剛體的話，根據製造及組裝時的誤差而難以將吸入噴嘴173插入到第2支撐孔117。為了解決這樣的問題，在排出管171中係形成皺縮部171b。如此一來，因為排出管171可以伸縮或彎曲，即使在排出單元170有誤差也可以將吸入噴嘴173容易地插入到第2支撐孔117。 The left side portion of the suction nozzle 173 that communicates with the discharge pipe 171 is inserted and supported by the second support hole 117. However, if the discharge pipe 171 is completely rigid, it is difficult to insert the suction nozzle 173 into the second support hole 117 in accordance with an error in manufacturing and assembly. In order to solve such a problem, the crimped portion 171b is formed in the discharge pipe 171. In this way, since the discharge pipe 171 can be expanded or contracted, the suction nozzle 173 can be easily inserted into the second support hole 117 even if there is an error in the discharge unit 170.
排出噴嘴163及吸入噴嘴173係因為位於維持高溫環境的本體110內部，會根據熱而有所損傷。為了防止該情況，排出噴嘴163及吸入噴嘴173係分別以石英製而形成。再者，流入管161及排出管171係分別以金屬製而形成。 The discharge nozzle 163 and the suction nozzle 173 are damaged by heat because they are located inside the body 110 that maintains a high temperature environment. In order to prevent this, the discharge nozzle 163 and the suction nozzle 173 are each formed of quartz. Further, the inflow pipe 161 and the discharge pipe 171 are each formed of metal.
然而，石英製與金屬製係難以相互結合。藉此，流入管161及排出噴嘴163係以合成樹脂製的連結管169為媒介相互連通，排出管171及吸入噴嘴173係以合成樹脂製的連結管179為媒介相互連通。此時，連結管169、179係以耐熱性及耐化學性優之聚四氟乙烯(Polytetrafluoroethylene)而形成為佳。 However, it is difficult to combine quartz and metal systems. In this way, the inflow pipe 161 and the discharge nozzle 163 communicate with each other via a connecting pipe 169 made of synthetic resin, and the discharge pipe 171 and the suction nozzle 173 communicate with each other via a connecting pipe 179 made of synthetic resin. At this time, the connecting pipes 169 and 179 are preferably formed of polytetrafluoroethylene which is excellent in heat resistance and chemical resistance.
從排出噴嘴163排出的冷卻氣體係容易流入到本體110的內部。然而，已流入到本體110內部的冷卻氣體係難以容易地流入到吸入噴嘴173的內部。藉此，將吸入噴嘴173的內徑形成為比排出噴嘴163的內徑更大為佳。 The cooling gas system discharged from the discharge nozzle 163 easily flows into the inside of the body 110. However, the cooling gas system that has flowed into the inside of the body 110 is difficult to easily flow into the inside of the suction nozzle 173. Thereby, it is preferable to form the inner diameter of the suction nozzle 173 to be larger than the inner diameter of the discharge nozzle 163.
在排出噴嘴163與第1支撐孔115之間、及吸入噴嘴173與第2支撐孔117之間係利用密封構件(未圖示)予以密封乙 事是必然的。 A sealing member (not shown) is sealed between the discharge nozzle 163 and the first support hole 115 and between the suction nozzle 173 and the second support hole 117. Things are inevitable.
關於本實施形態之基板處理裝置係將處理過的基板50強制冷卻之冷卻手段支撐設置在形成腔室111的本體110外面。因此，可易於將前述冷卻手段設置在本體110，使維修容易。 In the substrate processing apparatus of the present embodiment, the cooling means for forcibly cooling the processed substrate 50 is supported outside the body 110 forming the chamber 111. Therefore, the aforementioned cooling means can be easily provided to the body 110, making maintenance easy.
沒有說明之符號140係為支撐本體110的框架。 The symbol 140, which is not illustrated, is a frame that supports the body 110.
如前述所闡述之關於本發明之實施形態的圖面係省略詳細的輪廓線，以易於了解屬於本發明的技術思想部份之方式予以概略顯示。前述實施形態並不是成為限定本發明的技術思想之基準，只不過是用以理解包含在本發明申請專利範圍的技術事項之參照事項。 The drawings on the embodiments of the present invention as described above are omitted from the detailed outlines, and are schematically shown in a manner that is easy to understand a part of the technical idea of the present invention. The above-described embodiments are not intended to limit the technical idea of the present invention, but are merely intended to understand the technical matters included in the scope of the present invention.
50‧‧‧基板 50‧‧‧Substrate
110‧‧‧本體 110‧‧‧ body
111‧‧‧腔室 111‧‧‧ chamber
113‧‧‧門扉 113‧‧‧ threshold
115‧‧‧第1支撐孔 115‧‧‧1st support hole
117‧‧‧第2支撐孔 117‧‧‧2nd support hole
120‧‧‧托架 120‧‧‧ bracket
130‧‧‧支架 130‧‧‧ bracket
140‧‧‧框架 140‧‧‧Frame
160‧‧‧流入單元 160‧‧‧Incoming unit
161‧‧‧流入管 161‧‧‧Inflow pipe
161a‧‧‧結合片 161a‧‧‧Joint film
161b‧‧‧皺縮部 161b‧‧‧ Shrinkage
163‧‧‧排出噴嘴 163‧‧‧ discharge nozzle
165‧‧‧第1支撐承座 165‧‧‧1st support socket
165a‧‧‧貫穿孔 165a‧‧‧through holes
167‧‧‧第1支撐構件 167‧‧‧1st support member
167a‧‧‧流入路 167a‧‧‧Incoming road
169‧‧‧連結管 169‧‧‧Connected tube
170‧‧‧排出單元 170‧‧‧Draining unit
171‧‧‧排出管 171‧‧‧Draining tube
171a‧‧‧結合片 171a‧‧‧Joint film
171b‧‧‧皺縮部 171b‧‧‧ Shrinkage
173‧‧‧吸入噴嘴 173‧‧‧Inhalation nozzle
175‧‧‧第2支撐承座 175‧‧‧2nd support socket
175a‧‧‧貫穿孔 175a‧‧‧through holes
177‧‧‧第2支撐構件 177‧‧‧2nd support member
177a‧‧‧排出路 177a‧‧‧Drainage
179‧‧‧連結管 179‧‧‧Connected tube
圖1係為關於本發明之一實施形態之基板處理裝置的立體圖。 Fig. 1 is a perspective view of a substrate processing apparatus according to an embodiment of the present invention.
圖2係為圖1所示之冷卻手段的立體圖。 Figure 2 is a perspective view of the cooling means shown in Figure 1.
圖3係為圖2所示之冷卻手段的主要部份擴大圖。 Fig. 3 is an enlarged view of a main part of the cooling means shown in Fig. 2.
50‧‧‧基板 50‧‧‧Substrate
110‧‧‧本體 110‧‧‧ body
111‧‧‧腔室 111‧‧‧ chamber
113‧‧‧門扉 113‧‧‧ threshold
120‧‧‧托架 120‧‧‧ bracket
130‧‧‧支架 130‧‧‧ bracket
140‧‧‧框架 140‧‧‧Frame
170‧‧‧排出單元 170‧‧‧Draining unit
Claims (10)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110091425A KR101275496B1 (en) | 2011-09-08 | 2011-09-08 | Apparatus for processing substrate |
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| Publication Number | Publication Date |
|---|---|
| TW201330050A true TW201330050A (en) | 2013-07-16 |
Family
ID=47832697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101132339A TW201330050A (en) | 2011-09-08 | 2012-09-05 | Apparatus for processing substrate |
Country Status (4)
| Country | Link |
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| KR (1) | KR101275496B1 (en) |
| CN (1) | CN103782367B (en) |
| TW (1) | TW201330050A (en) |
| WO (1) | WO2013036018A2 (en) |
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|---|---|---|---|---|
| KR101512330B1 (en) * | 2013-06-11 | 2015-04-15 | 주식회사 테라세미콘 | Apparatus for processing substrate |
| KR102401742B1 (en) * | 2015-09-17 | 2022-05-25 | 주성엔지니어링(주) | Chamber cleaning apparatus capable of controlling temperature of activity gas line |
| KR102423268B1 (en) * | 2018-02-20 | 2022-07-21 | 주식회사 원익아이피에스 | Apparatus for processing substrate |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06244095A (en) * | 1993-02-12 | 1994-09-02 | Dainippon Screen Mfg Co Ltd | Substrate cooling device |
| JP3912208B2 (en) * | 2002-02-28 | 2007-05-09 | 東京エレクトロン株式会社 | Heat treatment equipment |
| KR100716456B1 (en) * | 2004-12-29 | 2007-05-10 | 주식회사 에이디피엔지니어링 | Plasma processing apparatus |
| JP4878830B2 (en) * | 2005-12-12 | 2012-02-15 | 株式会社日立国際電気 | Substrate processing equipment |
| JP5015847B2 (en) * | 2008-04-07 | 2012-08-29 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, program, and recording medium |
| KR101094279B1 (en) * | 2009-11-06 | 2011-12-19 | 삼성모바일디스플레이주식회사 | Heating device and Substrate Processing Apparatus having the same |
-
2011
- 2011-09-08 KR KR1020110091425A patent/KR101275496B1/en active IP Right Grant
-
2012
- 2012-09-04 WO PCT/KR2012/007080 patent/WO2013036018A2/en active Application Filing
- 2012-09-04 CN CN201280043147.8A patent/CN103782367B/en active Active
- 2012-09-05 TW TW101132339A patent/TW201330050A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013036018A3 (en) | 2013-05-02 |
| CN103782367B (en) | 2017-02-08 |
| KR20130027902A (en) | 2013-03-18 |
| WO2013036018A2 (en) | 2013-03-14 |
| KR101275496B1 (en) | 2013-06-17 |
| CN103782367A (en) | 2014-05-07 |
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