TW201322139A - Rfid標籤 - Google Patents
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- TW201322139A TW201322139A TW101135975A TW101135975A TW201322139A TW 201322139 A TW201322139 A TW 201322139A TW 101135975 A TW101135975 A TW 101135975A TW 101135975 A TW101135975 A TW 101135975A TW 201322139 A TW201322139 A TW 201322139A
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- 239000002184 metal Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000003566 sealing material Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000007789 sealing Methods 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 229910001220 stainless steel Inorganic materials 0.000 claims description 17
- 239000010935 stainless steel Substances 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 238000004891 communication Methods 0.000 abstract description 15
- 101100328086 Caenorhabditis elegans cla-1 gene Proteins 0.000 description 35
- 230000005672 electromagnetic field Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- -1 Polyethylene Terephthalate Polymers 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- XIKYYQJBTPYKSG-UHFFFAOYSA-N nickel Chemical compound [Ni].[Ni] XIKYYQJBTPYKSG-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
- G06K19/0775—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card arrangements for connecting the integrated circuit to the antenna
- G06K19/07754—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card arrangements for connecting the integrated circuit to the antenna the connection being galvanic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
- G06K19/07773—Antenna details
- G06K19/07775—Antenna details the antenna being on-chip
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
- G06K19/07773—Antenna details
- G06K19/07777—Antenna details the antenna being of the inductive type
- G06K19/07779—Antenna details the antenna being of the inductive type the inductive antenna being a coil
- G06K19/07783—Antenna details the antenna being of the inductive type the inductive antenna being a coil the coil being planar
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2208—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/40—Radiating elements coated with or embedded in protective material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/44—Details of, or arrangements associated with, antennas using equipment having another main function to serve additionally as an antenna, e.g. means for giving an antenna an aesthetic aspect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/16—Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole
- H01Q9/26—Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole with folded element or elements, the folded parts being spaced apart a small fraction of operating wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Details Of Aerials (AREA)
- Credit Cards Or The Like (AREA)
Abstract
本發明提供一種即便為小型(1.9 mm□~13 mm□),亦可確保數cm以上的通信距離,而且與先前的晶載天線相比可減少成本的RFID標籤。RFID標籤具有基材、配置於上述基材上的天線、介隔金屬層而配置於上述基材上且連接於上述天線的IC晶片、及密封該IC晶片及天線的密封材,其中上述天線為線圈天線或環形天線,包含上述天線的電感L與上述IC晶片的靜電電容C而形成的電路的共振頻率f0為IC晶片的動作頻率或其附近。
Description
本發明是有關於一種與讀寫器(Reader Writer)一併使用而非接觸地進行資訊的收發的RFID(radio frequency identification,射頻識別)標籤(Tab)。
以製品的資訊或識別、管理、防偽為目的,於商品、包裝、卡(Card)、書籍等中,多數利用搭載有IC(Integrated Circuit,積體電路)晶片(Chip)的非接觸式RFID標籤。於IC晶片中,寫入有商品的名稱、價格等所有資訊,根據情況亦存在能夠在之後藉由讀寫器寫入製造日期或製造處、餘額等資訊的IC晶片。於管理、銷售、使用時,可藉由讀寫器以無線的方式讀取、利用IC晶片的資訊。以此方式,RFID標籤具有如下等較大的優點:提高商品管理的便利性、或提高安全性,又,消除人為的失誤(參照專利文獻1)。
就RFID標籤而言,在安裝於商品或內置於卡內等的特性方面,小型薄型化的要求均較強。近年來,對於先前刻印‧記入批次編號而進行管理、或者未能實現管理本身的商品的利用尤其受到關注。具體而言,有利於眼鏡、鐘錶或者醫用樣品等小型多種物品的管理,且商品(樣品)
的製造處、作業者、製造日期、使用材料、尺寸、特性、庫存數量管理等,從而可減少管理作業者的工夫,並且可防止失誤。為了實現具有這樣的便利性的管理系統,須要使RFID標籤小型化。
如圖1所示,作為小型的RFID標籤,考慮有直接於IC晶片上形成天線的類型(晶載天線(On Chip Antenna)),但存在通信距離較短(小於等於1 mm)的問題。於實際使用的現場,與僅能夠在通信距離小於等於1 mm的程度的大致接觸的狀態下通信的RFID標籤相比,通信距離2 mm~3 mm以上的RFID標籤的作業效率較佳,且作業的自由度亦變高,故有用。因此,就如圖1的晶載天線而言,若欲使通信距離變長,則需要擴大IC晶片的尺寸(Size),故存在成本變高的問題(參照專利文獻2、3)。
另一方面,如圖2所示,作為通信距離比較長(2 mm~3 mm以上)的RFID標籤,使用膜(film)基材上形成天線(Antenna)且搭載有IC晶片的RFID標籤,但存在尺寸較大(數cm□以上)的問題(參照專利文獻4)。再者,所謂數cm□是指邊長為2~3 cm的正方形。以下亦相同。
另一方面,報告有於IC封裝體(Package)內形成天線這樣的量產性優異的技術(專利文獻5、6)。
專利文獻1:日本專利特開2005-347635號公報
專利文獻2:日本專利特開2001-344464號公報
專利文獻3:日本專利特開2006-221211號公報
專利文獻4:日本專利特開2011-103060號公報
專利文獻5:日本專利特開2001-52137號公報
專利文獻6:日本專利特開2010-152449號公報
先前,如尺寸為數mm□等級(Order)、且通信距離為該尺寸的10倍左右的數cm等級這樣的RFID標籤的工業利用價值非常高,但未提供。
本發明提供一種廉價、進而小型且通信距離為數mm以上的可靠性優異的超小型RFID標籤。
為了解決上述課題,本發明提供一種即便為小型(1.9 mm□~13 mm□),亦可確保數cm以上的通信距離,而且與先前的晶載天線相比,可減少成本的RFID標籤。又,提供如下的RFID標籤:於半導體裝置的製造步驟等中進行的回流焊(Solder Reflow)或射出成形等中具有250℃~300℃數秒的耐熱性,且能夠忍受半導體裝置的使用中的發熱。
於不鏽鋼(Stainless)板90上,利用抗蝕劑(Resist)100而形成圖案(Pattern),藉由鍍敷而於無抗蝕劑100的部分形成成為天線20等的金屬,於剝離抗蝕劑100後搭載IC晶片30,而將上述天線20與IC晶片30電性連接,藉由密封材10密封上述天線20與上述IC晶片30,僅剝離不鏽鋼板90,且藉由切割(Dicing)等進行切斷,藉此獲得1.9 mm□~13 mm□以下的大小的RFID標籤80。
此時,以如下方式設計天線20:包含天線20的電感(Inductance)與IC晶片30的靜電電容而形成的電路的共振頻率為IC晶片30的動作頻率附近。
特別是,藉由將天線20設為線圈(Coil)形狀,可容易地將上述電路設計成IC共振電路,且能夠以小面積而有效地獲得電感,故可實現小型化。
藉由使用以環氧樹脂(Epoxy)、碳、及矽土(Silica)為主成分的密封材10,可提高耐熱性。
可提供一種即便為小型(1.9 mm□~13 mm□),亦可確保數cm以上的通信距離,而且與先前的晶載天線相比可減少成本的RFID標籤。
以下,作為實施形態,以於密封材10中形成天線20
的方法為中心,對RFID標籤80的製造方法進行說明。
如圖3所示,於不鏽鋼板90上形成絕緣性抗蝕劑100,去除形成搭載天線20、IC晶片30的墊(Pad)等的部分的抗蝕劑100。
接著,如圖4所示,藉由鍍敷步驟,於已去除抗蝕劑100的部分,設置鍍敷有金屬的金屬層,從而形成天線20等。
此後,如圖5所示,去除所有抗蝕劑100,藉此天線20等金屬配線殘留於不鏽鋼板90上。又,搭載IC晶片30的墊亦殘留於不鏽鋼板90上。
接著,如圖6所示,利用黏晶膜(Die Bond Film)(未圖示)等,將IC晶片30固定於搭載IC晶片30的墊上,並藉由打線接合(Wire Bonding)40等而將IC晶片30與天線20電性連接。再者,幾乎所有天線20均可藉由調整配線部位而進行覆晶(Flip Chip)連接。
此處,構成搭載IC晶片30的墊的金屬層因電磁性地遮蔽IC晶片30的下方,故有助於IC晶片30的穩定的高頻振盪動作。又,於自不鏽鋼板90剝離下文將述的IC晶片30時,會減少施加至IC晶片30的應力,從而保護IC晶片30。
此後,於不鏽鋼板90上連同上述鍍敷金屬以密封材10進行密封,並於密封材硬化後,剝離不鏽鋼板90,藉此
可製作如圖7般於密封材10中密封有天線20、IC晶片30的RFID標籤80。
此時,於圖4的鍍敷步驟中,以如圖8所示的方式使藉由鍍敷所形成的天線20等金屬的高度高於抗蝕劑100的高度,藉此可形成如香菇般具有傘狀的天線20等金屬。如上所述般形成的天線20等金屬於剝離不鏽鋼板90時,牢固地卡在密封材10上,故可有效地防止一部分或全部殘留於不鏽鋼板90等上的不良狀況。
再者,由於可利用鍍敷而形成天線20等,且自不鏽鋼板90的剝離性亦良好,故較佳為使用以鎳(Nickel)為主成分的金屬作為上述鍍敷金屬。
將天線20的形狀的代表例示於圖9。又,於圖9中,亦圖示有IC晶片30及經打線接合的線(Wire)40。關於天線20的形狀,可利用蜿蜒線(Meander Line)天線、環形(Loop)天線等廣泛使用的天線。圖9(a)表示環形天線,圖9(b)表示蜿蜒線天線,圖9(c)表示渦狀天線,圖9(d)表示環形天線的另一形態,圖9(e)表示線圈狀天線。
除此之外,線圈形狀的天線、特別是作為RFID標籤80用天線,可小型化。下文將描述天線20的設計方法。又,於為線圈形狀的情況下,亦可藉由接著劑等搭載繞線線圈,但如本發明般於形成抗蝕劑後,藉由鍍敷所形成的
線圈狀的天線20的電感等性能較穩定,而且可形成線寬為0.05 mm等的微細的配線,故有利於小型化,且量產性亦優異,故於工業上有效。
又,藉由採用此種天線20的形狀,進而藉由基材1與密封材10的相對介電常數的貢獻,包含具有間隙而鄰接的構成部分的天線20中,鄰接的構成部分電容性耦合,從而於其等之間提供靜電電容。藉此,具有IC晶片30、及配置於其外周部的天線的構成整體的實質性的靜電電容即有效靜電電容較IC晶片30單體的靜電電容有明顯增加。此處,所謂實質性的靜電電容是指,於IC晶片30的外周部配置有天線的構成中的IC晶片30提供的靜電電容。
圖7是表示密封後的RFID標籤80的剖面圖。藉由總括地密封IC晶片30、天線20、線40而保護該等IC晶片30、天線20、線40。因亦密封打線接合的線40,故密封後的厚度或高度成為0.2 mm~1.0 mm左右。
作為密封材10,可使用半導體中通常使用的密封材,相對介電常數為2.6~4.5左右。為了提高半導體封裝體本身的性能,密封材10的相對介電常數較低者較佳,但相對介電常數越高,電感越增加,故可使天線20小型化。
本RFID標籤80中,將於先前技術中成為基材部分的不鏽鋼板90剝離,因此金屬配線露出。可以沒有保護層的程度來實現薄型化。藉此,例如RFID供給製造商可將較
薄的RFID標籤80提供給半導體封裝體等的製造商,藉由將RFID標籤80總括地密封至半導體封裝體內等,使得金屬部分變得不會出現於表面。
於RFID標籤80單體中,對露出於表面上的金屬部分進行防銹處理,藉此可抑制金屬的腐蝕。或者,於以RFID標籤80單體進行使用的情況下,於RFID標籤80中,在露出天線20等金屬的面上,形成絕緣性的抗蝕劑等,藉此封入IC晶片30或天線20等金屬配線部分,從而成為自外部完全無法觸模的構造,就環境劣化的觀點而言,或是就防偽的觀點而言,安全性‧可靠性均提高。
作為如上所述般製作而成的RFID標籤80,儘管為小型,但於自身中亦內置有天線與晶片,故無需將端子焊接安裝或電性連接至外部的零件(例如形成有天線圖案的基板)等上。即,具有如下等便利性:無需對欲管理的對象物使用特別的裝置或零件,人人都可藉由接著劑或膠帶(Tape)等而簡便地裝設。
以此方式製作的RFID標籤80的耐熱性是大致由密封材10的性能決定,密封材10的耐熱性若為數秒下,則為250℃~300℃,且穩態上大致為150℃以上,故耐熱性高於先前的在PET(Polyethylene Terephthalate,聚對苯二甲酸乙二酯)等上形成有天線的RFID標籤,從而即便於高溫下亦可正常地動作。
IC晶片30亦可為讀取專用的IC晶片,但寫入資訊的IC晶片因隨時寫入作業歷程等而於管理方面較佳。
天線20的設計是以由天線用線的形狀、線的粗細度、線的長度等決定的共振頻率為指標。藉由使該共振頻率接近使用的IC晶片30的動作頻率,使得天線20接收來自讀寫器的電力且將其傳達至IC晶片30,而後IC晶片30動作。
通常較難自天線的圖式解析地導出共振頻率。實際上,多數情況下,試作天線而實驗性地測定、或使用電磁場模擬器(Electromagnetic Field Simulator)求出共振頻率。特別是,本發明物品為小型,因此無法藉由手工作業準確地進行天線的試作,且利用如形成上述抗蝕劑100後藉由鍍敷而製作金屬的天線20的方法來製作‧評估試料並反饋其結果這樣的試誤不僅花費時間,亦花費成本,故於本說明書中,使用電磁場模擬器(ANSYS JAPAN股份有限公司製造的模擬器軟體HFSS)而設計,藉此削減時間及成本。最少亦需要向模擬器輸入天線20的形狀、材質、及IC晶片30的靜電電容、密封材10的形狀與折射率、相當於線40的導體、視作IC晶片30的電力埠(Port),從而根據模擬結果獲得共振頻率。該情況下的所謂共振頻率是指電路的阻抗的虛數部成為零的頻率。
為了便於理解設計的原理,考慮到於線圈狀天線20的兩端連接著IC晶片30的情況下的電性閉路,從而可視作簡單的IC共振電路。將圖9(e)的線圈狀天線20的等效電路示於圖10。該情況下的共振頻率f0,使用作為線圈狀天線20的等價電路的線圈50的電感L、作為IC晶片30的等價電路的電容器60的靜電電容C,而成為以下的(1)式。
此處,C會根據使用的IC晶片30的選定而改變,L可根據線圈狀天線20的形狀(特別是,線圈狀天線20的直徑與匝數)而調整,其結果,可實現作為目的的共振頻率f0。特別是,L的調整較有效,藉由增大線圈狀天線20的直徑或增加匝數而使L增加,其結果f0減少。
於上述式中,作為IC晶片30的靜電電容C,可應用IC晶片30的外周部配置著天線20(線圈50)的構成的有效靜電電容。於本實施形態中,藉由在具有間隙而鄰接的天線20的構成部分之間產生電容成分,加上基材1與密封材10的相對介電常數的貢獻,天線20提供靜電電容。藉此,與IC晶片30單體的靜電電容相比,具有IC晶片30、及配置於其外周部的天線的構成整體的實質性的靜電電容即有效靜電電容有明顯增加。因此,根據上述通式可知,
所期望的共振頻率f0可藉由更小的電感L實現。由此,可減少直徑與匝數等而將線圈50的尺寸小型化,進一步可將RFID標籤整體小型化。
然而,於使用的IC晶片30受到指定、或較小地限制天線20的搭載面積而於製程中無法較細地實現天線20的線寬的情況下等,亦存在無法於作為目標的RFID標籤80的尺寸內實現所希望的共振頻率的情形。
再者,正確來說,對於線圈狀天線20而言,在線間存在浮動電容C',故比(1)式複雜。
RFID標籤80(IC晶片30)的共振頻率(動作頻率)較佳為,處於電波法上規定的特別是商業利用價值較高的13.56 MHz~2.48 GHz的範圍內。特別是,於UHF帶(Ultra High Frequency Band,超高頻帶)的動作頻率為0.86 GHz~0.96 GHz附近的RFID的情況下,電波的波長為30 cm左右,另一方面,UHF帶用的IC晶片的大小通常為0.6 mm□以下,故若為晶載天線方式則無法將IC晶片可正常地動作的天線形成於IC晶片上。然而藉由使用本發明的方式,而具有即便不使用先前的數cm□的天線,RFID標籤亦可藉由數mm□的單層的天線而動作的優異的特長。又,天線的大小為數mm見方,且導線寬/導線間寬為10 μm~數100 μm即可,故可藉由對於銅箔等金屬層進行蝕刻(etching)等而容易地形成。進而,為單層的天線即可,
故無需多層化,因此,可使用在基材的單面貼合著銅箔作為金屬層的附銅箔聚醯亞胺(Polyimide)基材的銅箔形成。因此,可使用低成本的通用的材料,藉由通用的製程形成。
本發明的RFID標籤80可埋設至半導體裝置內等而使用。又,可藉由雙面膠等如標記(Label)那樣貼附於商品或樣品上而用於管理等中,從而於銷售商品時等,亦可容易地摘除。
讀寫器是使用LS產電股份有限公司製造的UI-9061(功率為1 W)。於以讀寫器的讀取部為中心,在周圍25 cm見方內無阻礙物的狀態下,進行RFID標籤80的讀取評估。對藉由讀寫器讀取RFID標籤80時的、自讀寫器讀取部至RFID標籤80的最大距離(以下,稱為讀取距離)進行測定。再者,此時所使用的IC晶片的大小為0.5 mm×0.5 mm×0.1 mm左右,靜電電容為0.77 pF,動作頻率為0.86 GHz~0.96 GHz附近。
表1為測定如下樣品後表示讀取距離最長時的值的結果,該樣品如下所述:如圖11所示般於聚醯亞胺基板1上藉由蝕刻形成天線20,並將在UHF帶動作的IC晶片30打線接合後進行密封而成的樣品。
根據該表1,對於與IC晶片連接而形成電性閉路的線圈天線及環形天線2而言,利用電磁場模擬器求出的共振頻率為0.2 GHz~2 GHz,與其他天線相比,接近IC晶片的動作頻率0.9 GHz左右。又,與未形成電性閉路的蜿蜒線天線、環形天線1、渦狀天線相比,讀取距離成為讀取良好的結果。又,於利用電磁場模擬器求出的共振頻率為0.5 GHz~1.5 GHz的實例1a、1b、2a、2b、3b、4c、5c中,獲得大於等於5 mm的通信距離。特別是,於接近IC晶片的動作頻率0.9 GHz左右的、共振頻率為1 GHz~1.1 GHz的實例1a、2b、3b中,獲得超過20 mm的通信距離(最大的讀取距離為37 mm)。
此處,於RF標籤80的大小為縱4 mm以下×橫4 mm以下的情況下,高度可設為0.4 mm以下。於RFID標籤80的大小為縱2.5 mm以下×橫2.5 mm以下的情況下,高度可設為0.3 mm以下。於RFID標籤80的大小為縱1.9 mm以下×橫1.9 mm以下的情況下,高度可設為0.3 mm以下。
表2為本發明的圖7所示的樣品的讀取距離的測定結果。將形成有與表1中讀取良好的兩種樣品的大小‧形狀
大致相同的天線20的RFID標籤80,各試作20個左右並進行測定。其結果,讀取距離於4 mm□的物品中為29.5 mm,於2.5 mm□物品中為19.9 mm。
於製作天線20時,導線寬及導線間距離較粗的天線能以良好的良率穩定地製造。因此,於根據製程上的制約而決定導線寬/導線間距離的情況下,一面確保數cm以上的讀取距離,一面考察能小型化至哪種程度。其結果,明確如下情形:在UHF帶下當導線寬/導線間距離為0.2 mm/0.2 mm的情況下,將RFID標籤80的外徑縮小至4 mm□左右是極限。又,明確如下情形:於導線寬/導線間距離為0.1 mm/0.1 mm的情況下,將RFID標籤80的外徑縮小至2.5 mm□左右是極限。又,明確如下情形:於導線寬/導線間距離為0.05 mm/0.05 mm的情況下,將RFID標籤80的外徑縮小至1.9 mm□左右是極限。
表3為如下情況下的模擬結果及實驗結果:使用IC晶片的大小為0.5 mm×0.5 mm×0.1 mm左右,動作頻率為13.56 MHz,靜電電容為17 pF的IC晶片。於利用電磁場
模擬器求出的共振頻率為29 MHz的實例6b中,獲得12 mm的通信距離,特別是於利用電磁場模擬器求出的共振頻率為14 MHz的實例7b中,獲得110 mm的通信距離。又,明確如下情形:於HF頻帶(High Frequency Band,高頻帶)的動作頻率為13.56 MHz時,頻率變得低於UHF帶,故需要增大線圈狀天線20的電感,於導線寬/導線間距離為0.1 mm/0.1 mm的情況下,將RFID標籤80的外徑縮小至13 mm□左右為止是極限。
此處,於RFID標籤80的大小為縱13 mm以下×橫13 mm以下的情況下,高度可設為1.0 mm以下。
表4為如下情況下的模擬結果及實驗結果:使用IC晶片的大小為0.5 mm×0.5 mm×0.1 mm左右,動作頻率為2.45 GHz,靜電電容為0.7 pF的IC晶片。於利用電磁場模擬器求出的共振頻率為2 GHz的實例8a、及利用電磁場模擬器求出的共振頻率為2.1 GHz的實例9b中,獲得4 mm的通信距離。又,明確如下情形:於導線寬/導線間距離為0.1 mm/0.1 mm的情況下,將RFID標籤80的外徑設為1.9
mm□左右是極限。
本發明的RFID標籤能夠以商品、包裝、卡、書籍、眼鏡、鐘錶(特別是手錶等小型者)、半導體、醫用(自患者提取的樣品等)等製品的管理、識別、資訊提示、資訊記錄、防偽為目的而使用。
1‧‧‧基材
10‧‧‧密封材
20‧‧‧天線
30‧‧‧IC晶片
40‧‧‧打線接合的線
50‧‧‧線圈(天線)
60‧‧‧電容器(IC晶片)
70‧‧‧電阻(IC晶片。於模擬時設定的埠)
80‧‧‧RFID標籤
90‧‧‧不鏽鋼板
100‧‧‧抗蝕劑
圖1是先前的RFID標籤的概略圖。
圖2是先前的RFID標籤的概略圖。
圖3是說明本實施形態的RFID標籤80的製造方法的圖。
圖4是說明本實施形態的RFID標籤80的製造方法的圖。
圖5是說明本實施形態的RFID標籤80的製造方法的圖。
圖6是說明本實施形態的RFID標籤80的製造方法的
圖。
圖7是本實施形態的RFID標籤80的概略圖。
圖8是說明本實施形態的RFID標籤80的製造方法的圖。
圖9(a)、圖9(b)、圖9(c)、圖9(d)、圖9(e)是表示本實施形態的RFID標籤80的天線20的形狀的圖。
圖10是表示連接著IC晶片30的線圈狀天線20的等效電路的圖。
圖11是實驗中所使用的RFID標籤的概略圖。
10‧‧‧密封材
20‧‧‧天線
30‧‧‧IC晶片
40‧‧‧打線接合的線
80‧‧‧RFID標籤
Claims (21)
- 一種RFID標籤,包括:基材;天線,設置於上述基材上;IC晶片,配置於上述基材上,且連接於上述天線;及密封材,密封上述IC晶片及上述天線,其中上述天線為線圈天線或環形天線,包括上述天線的電感L與上述IC晶片的靜電電容C而形成的電路的共振頻率f0為上述IC晶片的動作頻率或其附近,上述IC晶片與上述金屬層之間的電磁耦合實質上使上述IC晶片的靜電電容增加。
- 一種RFID標籤,包括:基材;天線,配置於上述基材上;IC晶片,介隔金屬層而配置於上述基材上,且連接於上述天線;及密封材,密封上述IC晶片及上述天線;其中上述天線為線圈天線或環形天線,包括上述天線的電感L與上述IC晶片的靜電電容C而形成的電路的共振頻率f0為IC晶片的動作頻率或其附近,上述IC晶片與上述金屬層之間的電磁耦合實質上使上述IC晶片的靜電電容增加。
- 如申請專利範圍第1項或第2項所述的RFID標籤,其中上述IC晶片的動作頻率為0.86 GHz~0.96 GHz,且包括上述天線的電感L與上述IC晶片的靜電電容C而形成的電路的共振頻率f0為0.2 GHz~2 GHz,或 上述IC晶片的動作頻率為13.56 MHz,上述共振頻率f0為13.56 MHz~29 MHz,或上述IC晶片的動作頻率為2.45 GHz,上述共振頻率f0為2 GHz~2.45 GHz。
- 如申請專利範圍第1項至第3項中任一項所述的RFID標籤,其中具有間隙而鄰接的天線的構成部分提供靜電電容,使包括上述IC晶片及配置於其外周部的上述天線的構成整體的實質性的靜電電容較上述IC晶片單體的靜電電容更增加。
- 如申請專利範圍第1項至第4項中任一項所述的RFID標籤,其中上述RFID標籤的大小為縱13 mm以下、橫13 mm以下以及高度1.0 mm以下、或縱4 mm以下、橫4 mm以下以及高度0.4 mm以下、或縱2.5 mm以下、橫2.5 mm以下以及高度0.3 mm以下、或縱1.9 mm以下、橫1.9 mm以下以及高度0.3 mm以下。
- 如申請專利範圍第1項至第5項中任一項所述的RFID標籤,其中上述天線為線圈狀。
- 如申請專利範圍第1項至第6項中任一項所述的RFID標籤,其中上述動作頻率帶為13.56 MHz~2.48 GHz。
- 如申請專利範圍第1項至第7項中任一項所述的RFID標籤,其中上述動作頻率帶為0.86 GHz~0.96 GHz。
- 如申請專利範圍第1項至第8項中任一項所述的 RFID標籤,其中上述密封材的相對介電常數為2.6以上。
- 如申請專利範圍第1項至第9項中任一項所述的RFID標籤,其中相對於上述天線的導線寬的導線間距離處於0.2 mm比0.2 mm~0.05 mm比0.05 mm的範圍內。
- 如申請專利範圍第1項至第10項中任一項所述的RFID標籤,其中上述RFID標籤是藉由使用以環氧樹脂、碳及矽土為主成分的上述密封材而提高耐熱性。
- 如申請專利範圍第1項至第11項中任一項所述的RFID標籤,其中包括上述天線、連接於上述天線的上述IC晶片、及密封上述IC晶片及上述天線的密封材的RFID標籤是由如下方式獲得:利用抗蝕劑於不鏽鋼板上形成圖案,藉由鍍敷而於無上述抗蝕劑的部分形成金屬,於剝離上述抗蝕劑後搭載上述IC晶片,並將上述金屬與上述IC晶片電性連接,藉由上述密封材密封上述金屬與上述IC晶片,並且僅剝離上述不鏽鋼板。
- 如申請專利範圍第12項所述的RFID標籤,其中上述金屬為以鎳為主成分的金屬。
- 如申請專利範圍第12項、或第13項所述的RFID標籤,其中藉由鍍敷所形成的上述金屬的中心側比RFID標籤表層側粗。
- 如申請專利範圍第1項至第14項中任一項所述的RFID標籤,其中上述金屬露出於表面。
- 一種半導體封裝體,其將如申請專利範圍第15項所述的RFID標籤一併密封,藉此RFID標籤的金屬沒有露出於表面。
- 一種RFID標籤的製造方法,其是製造如申請專利範圍第1項至第12項中任一項的RFID標籤的方法,上述RFID標籤包括天線、連接於上述天線的IC晶片、及密封上述IC晶片及上述天線的密封材,且上述RFID標籤是由如下方法獲得:利用抗蝕劑於不鏽鋼板上形成圖案,藉由鍍敷而於無上述抗蝕劑的部分形成金屬,於上述抗蝕劑剝離後搭載上述IC晶片,並將上述金屬與上述IC晶片電性連接,藉由上述密封材密封上述金屬與上述IC晶片,並且僅剝離上述不鏽鋼板。
- 如申請專利範圍第17項所述的RFID標籤的製造方法,其中上述金屬為以鎳為主成分的金屬。
- 如申請專利範圍第17項或第18項所述的RFID標籤的製造方法,其中藉由鍍敷所形成的上述金屬的中心側比RFID標籤表層側粗。
- 如申請專利範圍第17項至第19項中任一項所述的RFID標籤的製造方法,其中上述金屬露出於上述密封材的表面。
- 一種半導體封裝體的製造方法,其在如申請專利範圍第20項所述的RFID標籤的製造方法中,將金屬露出 於密封材的表面的RFID標籤一併密封,藉此RFID標籤的金屬沒有露出於表面。
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- 2012-09-27 WO PCT/JP2012/074932 patent/WO2013047680A1/ja active Application Filing
- 2012-09-27 US US14/345,688 patent/US9171244B2/en active Active
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CN104051847A (zh) * | 2014-06-27 | 2014-09-17 | 南通富士通微电子股份有限公司 | 射频识别天线 |
CN104051840A (zh) * | 2014-06-27 | 2014-09-17 | 南通富士通微电子股份有限公司 | 射频识别天线 |
CN104051839A (zh) * | 2014-06-27 | 2014-09-17 | 南通富士通微电子股份有限公司 | 射频识别天线的形成方法 |
CN104078759A (zh) * | 2014-06-27 | 2014-10-01 | 南通富士通微电子股份有限公司 | 射频识别天线的形成方法 |
CN104051839B (zh) * | 2014-06-27 | 2016-06-01 | 南通富士通微电子股份有限公司 | 射频识别天线的形成方法 |
CN104051847B (zh) * | 2014-06-27 | 2016-07-06 | 南通富士通微电子股份有限公司 | 射频识别天线 |
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US9171244B2 (en) | 2015-10-27 |
JP5776780B2 (ja) | 2015-09-09 |
US20140224887A1 (en) | 2014-08-14 |
JPWO2013047680A1 (ja) | 2015-03-26 |
CN104025126A (zh) | 2014-09-03 |
TWI564811B (zh) | 2017-01-01 |
KR101609959B1 (ko) | 2016-04-06 |
CN104025126B (zh) | 2017-08-18 |
WO2013047680A1 (ja) | 2013-04-04 |
KR20140068209A (ko) | 2014-06-05 |
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