CN104025126B - Rfid标签 - Google Patents
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- CN104025126B CN104025126B CN201280047245.9A CN201280047245A CN104025126B CN 104025126 B CN104025126 B CN 104025126B CN 201280047245 A CN201280047245 A CN 201280047245A CN 104025126 B CN104025126 B CN 104025126B
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Abstract
本发明提供一种即使为小型(一边为1.9~13mm的正方形)也能够确保数cm以上的通信距离,而且与以前的片上天线相比能够降低成本的RFID标签。RFID标签(80)具有天线(20)、与所述天线(20)连接的IC芯片(30)以及密封该IC芯片(30)和天线(20)的密封材料(10),所述天线(20)为线圈天线或者环形天线,包含所述天线(20)的电感L与所述IC芯片(30)的静电容量C而形成的电路的共振频率f0为IC芯片(30)的工作频率或者在其附近。
Description
技术领域
本发明涉及与读写器一起使用并在非接触下进行信息收发的RFID(射频识别,radio frequency identification)标签。
背景技术
在产品的信息、识别、管理、防止伪造的目的下,在商品、包装、卡片、文件等中多数使用搭载有IC芯片的非接触式RFID标签。也有将商品的名称、价格等所有信息写入IC芯片中,并可以根据情况之后通过读写器写入制造日期、制造地点、余款等信息的RFID标签。在管理、销售、使用时可以通过读写器以无线读取、利用IC芯片的信息。由此,RFID标签带来了使商品管理的便利性提高、安全性提高、另外消除人为错误等大优点(参考专利文献1)。
从安装在商品上或者内置在卡片中这样的特性方面出发,RFID标签也强烈要求小型薄型化。特别是作为在以前通过刻印、记入批号来进行管理或者根本无法进行管理的商品中的使用在近年受到关注。具体地为眼镜、钟表或者医疗用样品等小型多品种商品的管理,对商品(样品)的制造地点、工作人员、制造日期、使用材料、尺寸、特性、库存数管理等有帮助,能够减少管理工作人员的劳力和时间而且防止错误。为了实现有这些便利性的管理系统,RFID标签的小型化是必不可缺的。
作为小型的RFID标签,想到了如图1所示在IC芯片上直接形成有天线的标签(片上天线),但有通信距离短(1mm以下)的问题。在实际使用的现场中,与只能在通信距离为1mm以下程度这样的大致接触状态下通信的RFID标签相比,通信距离为2~3mm以上的RFID标签的工作效率好,工作的自由度也高,因此有用。因此,在图1所示的片上天线中想要使通信距离增长则必须扩大IC芯片的尺寸,因此有成本提高的问题(参照专利文献2、3)。
另一方面,作为通信距离较长(2~3mm以上)的RFID标签,使用如图2所示在膜基材上形成有天线并搭载有IC芯片的RFID标签,但有尺寸大(大于或等于数cm×数cm的正方形)的问题(参照专利文献4)。另外,所谓数cm×数cm的正方形,是指一边为2~3cm的正方形。以下也同样。
另一方面,也报道过在IC封装内形成天线这样批量生产性优异的技术(专利文献5、6)。
现有技术文献
专利文献
专利文献1:日本特开2005-347635号公报
专利文献2:日本特开2001-344464号公报
专利文献3:日本特开2006-221211号公报
专利文献4:日本特开2011-103060号公报
专利文献5:日本特开2001-52137号公报
专利文献6:日本特开2010-152449号公报
发明内容
发明要解决的问题
以前,尺寸为数mm×数mm的正方形级且通信距离为其10倍左右的数cm级这样的RFID标签虽然在工业上利用价值非常高,但未被提供。
本发明提供一种廉价、而且小型且通信距离为数mm以上的可靠性优异的超小型RFID标签。
解决问题的方法
为了解决上述问题,本发明提供一种即使小型(1.9~13mm×1.9~13mm的正方形)也能够确保数cm以上的通信距离,而且与以前的片上天线相比能够降低成本的RFID标签。另外,提供一种在半导体装置的制造工序等中进行回流焊、注射成型等时具有250~300℃数秒的耐热性,而且也耐受半导体装置的使用中发热的RFID标签。
使用抗蚀剂100在不锈钢板90上形成图案,通过镀敷在无抗蚀剂100的部分形成作为天线20等的金属,抗蚀剂100剥离后搭载IC芯片30并电连接上述天线20与IC芯片30,使用密封材料10将上述天线20与上述芯片30密封,仅剥离不锈钢板90,通过切割等进行切断,从而得到小于或等于1.9~13mm×1.9~13mm的正方形大小的RFID标签80。
这时,按照包含天线20的电感与IC芯片30的静电容量而形成的电路的共振频率在IC芯片30的工作频率附近的方式设计天线20。
特别是通过使天线20为线圈形状,能够将上述电路容易地设计成为LC共振电路,而且能够以小面积有效率地得到电感,因此能够小型化。
通过使用以环氧树脂、碳和二氧化硅为主要成分的密封材料10,能够提高耐热性。
发明效果
能够提供一种即使小型(1.9~13mm×1.9~13mm的正方形)也能够确保数cm以上的通信距离,而且与以前的片上天线相比能够降低成本的RFID标签。
附图说明
图1是以前的RFID标签的概略图。
图2是以前的RFID标签的概略图。
图3是说明本实施方式的RFID标签80的制造方法的图。
图4是说明本实施方式的RFID标签80的制造方法的图。
图5是说明本实施方式的RFID标签80的制造方法的图。
图6是说明本实施方式的RFID标签80的制造方法的图。
图7是本实施方式的RFID标签80的概略图。
图8是说明本实施方式的RFID标签80的制造方法的图。
图9是表示本实施方式的RFID标签80的天线20的形状的图。
图10是表示连接了IC芯片30的线圈状天线20的电等效电路的图。
图11是在实验中使用的RFID标签的概略图。
具体实施方式
以下,作为实施方式,以在密封材料10中形成天线20的方法为中心,对RFID标签80的制造方法进行以下说明。
如图3所示,在不锈钢板90上形成绝缘性抗蚀剂100,将形成天线20、放置IC芯片30的焊盘等的部分的抗蚀剂100除去。
接着,如图4所示,设置通过镀敷工序在除去了抗蚀剂100的部分镀敷金属所形成的金属层,形成天线20等。
之后,如图5所示,将全部的抗蚀剂100除去,从而使天线20等金属配线留在不锈钢板90上。另外,放置IC芯片30的焊盘也留在不锈钢板90上。
接着,如图6所示,利用芯片接合膜(未图示)等将IC芯片30固定在放置IC芯片30的焊盘上,通过引线接合40等电连接IC芯片30与天线20。另外,几乎全部的天线20也能够通过调整配线位置而进行倒装芯片连接。
这里,构成放置IC芯片30的焊盘的金属层,通过电磁屏蔽IC芯片30的下方,从而有助于IC芯片30在高频振荡中稳定工作。另外,降低将后述的IC芯片30从不锈钢板90剥离时施加在IC芯片30上的应力,保护IC芯片30。
之后,在不锈钢板90上,连同上述镀敷金属一起使用密封材料10进行密封,密封材料固化后剥离不锈钢板90,从而能够制作如图7所示在密封材料10中密封有天线20、IC芯片30的RFID标签80。
这时,在图4的镀敷工序中,如图8所示,通过使利用镀敷形成的天线20等金属的高度比抗蚀剂100的高度更高,能够形成像蘑菇那样具有伞的天线20等金属。这样形成的天线20等金属在剥离不锈钢板90时牢固地挂在密封材料10上,因此有效地防止一部分或者全部留在不锈钢板90上的不良状况。
另外,使用以镍为主要成分的金属作为上述镀敷金属,天线20等能够通过镀敷形成而且从不锈钢板90的剥离性也良好,因此优选。
将天线20的形状的代表例子示于图9。另外,图9也图示了IC芯片30和进行引线接合的引线40。天线20的形状可以使用弯折线天线、环形天线等作为天线广泛使用的形状。图9(a)表示环形天线,图9(b)表示弯折线天线,图9(c)表示旋涡状天线,图9(d)表示环形天线的其它形态,图9(e)表示线圈状天线。
除此之外,线圈形状的天线特别是作为RFID标签80用天线能够小型化。关于天线20的设计方法如后所述。另外,在线圈形状的情况下,也能够使用粘接剂等搭载绕线线圈,但像本发明那样在抗蚀剂形成后通过镀敷形成的线圈状天线20的电感等性能稳定,另外能够形成线宽0.05mm等的微细配线,因此对小型化有利,批量生产性也优异,因而工业上有效。
另外,通过采取这样的天线20的形状,进一步使基材1和密封材料10的相对介电常数做贡献,从而包含以具有间隙的方式邻接的构成部分的天线20的邻接构成部分发生电容耦合,向它们之间提供静电容量。由此,作为具有IC芯片30和配置在其外周部的天线的构成整体的实质静电容量的实效静电容量,与IC芯片30单一物体的静电容量相比显著增加。这里,所谓实质静电容量是指:在IC芯片30的外周部配置有天线的构成中IC芯片30所提供的静电容量。
图7是表示密封后的RFID标签80的截面图。通过将IC芯片30、天线20、引线40一并密封而保护它们。由于引线接合的引线40也进行密封,因此密封后的厚度或者高度为0.2~1.0mm左右。
作为密封材料10,可以使用通常在半导体中使用的密封材料,相对介电常数为2.6~4.5左右。为了提高半导体封装本身的性能,优选密封材料10的相对介电常数低,但如果相对介电常数高,则电感增加,因此能够使天线20小型化。
本RFID标签80在以前的话是将作为基材部分的不锈钢板90剥离,因此金属配线露出。没有保护层,能够相应地薄型化。由此,例如RFID供给厂商能够向半导体封装等的厂商提供薄的RFID标签80,通过将RFID标签80一并密封在半导体封装内等,金属部分不会出现在表面。
在RFID标签80单一物体中,可以通过对露出表面的金属部分进行防锈处理而抑制金属的腐蚀。或者在使用RFID标签80单一物体的情况下,通过在RFID标签80中在天线20等金属露出的面上形成绝缘性抗蚀剂等,从而将IC芯片30、天线20等的金属配线部分封入,形成与外部完全不接触的结构,从环境恶化的观点和防止伪造的观点考虑安全性、可靠性都提高。
这样制作的RFID标签80虽然为小型但是本身内置了天线和芯片,因此不需要将端子焊料安装或者电连接在外部的部件(例如形成了天线图案的基板)等上。即具有如下便利性:对于想要管理的对象物,不使用特别的装置、部件,任何人都能够使用粘接剂、胶带等简便地安装。
由此制作的RFID标签80的耐热性大致由密封材料10的性能决定,就密封材料10的耐热性而言,数秒钟时为250~300℃而且稳定在大致150℃以上,因此与以前的在PET等上形成有天线的RFID标签相比耐热性高,即使在高温下也正常工作。
IC芯片30可以为读取专用的芯片,但能够写入信息的芯片由于能够随时写入操作历程等,因此适合管理。
〈天线20的设计方法〉
天线20的设计以由天线的形状、线的粗细、线的长度等决定的共振频率作为指标。通过使该共振频率接近所使用的IC芯片30的工作频率,天线20接收来自读写器的电力,并传给IC芯片30,使IC芯片30工作。
通常难以从天线的设计图解析导出共振频率。实际上多数情况下试制天线并进行实验测定,或者使用电磁场模拟器求出共振频率。特别是由于本发明物小型,因此不可能通过手工操作正确地进行天线的试制,由于通过形成上述抗蚀剂100后利用镀敷制作金属的天线20那样的方法来制作、评价试样,并反馈其结果,这样的反复试验既花费时间也花费成本,因此在本说明书中通过使用电磁场模拟器(ANSYS日本株式会社制模拟器软件HFSS)进行设计来削减时间和成本。有必要在模拟器中最少输入天线20的形状、材质、以及IC芯片30的静电容量、密封材料10的形状和折射率、相当于引线40的导体、看作IC芯片30的电力端口,由模拟结果得到共振频率。这种情况下的共振频率是指电路的阻抗的虚数部为零的频率。
容易理解设计原理的方法为,对将IC芯片30连接在线圈状天线20的两端时的电闭合电路加以考虑,可以看作单纯的LC共振电路。将图9(e)线圈状天线20的电等效电路示于图10中。这种情况下的共振频率f0,使用作为线圈状天线20的等效电路的线圈50的电感L、作为IC芯片30的等效电路的电容器60的静电容量C,成为下面的(1)式。
[数1]
这里,C可以通过使用的IC芯片30的选定而改变,L可以通过线圈状天线20的形状(特别是线圈状天线20的直径和卷数)进行调整,其结果能够实现目标共振频率f0。特别是L的调整有效,通过使线圈状天线20的直径增大或者卷数增多,L增加,其结果f0减少。
在上述式中,作为IC芯片30的静电容量C,可适用在IC芯片30的外周部配置有天线20(线圈50)的构成的实效静电容量。在本实施方式中,通过在以具有间隙的方式邻接的天线20的构成部分之间产生电容成分,进一步使基材1与密封材料10的相对介电常数做贡献,天线20提供静电容量。由此,作为具有IC芯片30和配置在其外周部的天线的构成整体的实质静电容量的实效静电容量,与IC芯片30单一物体的静电容量相比显著增加。因此,从上述式可知,期望的共振频率f0能够通过更小的电感L来实现。由此,通过减小直径和卷数等,能够使线圈50的尺寸小型化,进而能够使RFID标签整体小型化。
但是,在指定所使用的IC芯片30或者将天线20的搭载面积限制得较小从而在工艺上无法使天线20的线宽太细等情况下,也有在作为目标的RFID标签80的尺寸内无法实现期望的共振频率的情况。
另外,正确地说在线圈状天线20中在线间存在杂散电容C’,因此比(1)式更复杂。
RFID标签80(IC芯片30)的共振频率(工作频率)优选设为在电波法上特别是商业利用价值高的13.56MHz~2.48GHz的范围。特别是在UHF带(超高频带,Ultra HighFrequency Band)的工作频率0.86~0.96GHz附近的RFID的情况下,电波的波长为30cm左右,而UHF带用的IC芯片的大小通常为小于或等于0.6mm×0.6mm的正方形,因此在片上天线方式中,不可能在IC芯片上形成IC芯片正常工作的天线。但是通过使用本发明的方式,有如下的优异特点:即使不使用以前的数cm×数cm的正方形的天线而使用数mm×数mm的正方形的单层天线,RFID标签也工作。另外,由于可以为大小为数mm见方、导线宽度/导线间宽度为数10μm~数100μm的天线,因此通过蚀刻等能够容易地形成铜箔等金属层。进一步,由于可以为单层的天线而不需要多层化,因此能够使用在基材的一面上贴合有铜箔作为金属层的、带铜箔的聚酰亚胺基材的铜箔来形成。因此,能够使用低成本的通用材料以通用工艺来形成。
本发明的RFID标签80可以埋入半导体装置内等而使用。另外,可以使用双面胶带等像签条那样粘贴在商品、样品上而用于管理等,销售商品时等情况下也能够容易摘下。
实施例
〈读取评价的方法与实验结果〉
读写器使用LS产电株式会社制UI-9061(输出1W)。在以读写器的读取部为中心、周围25cm四周没有障碍物的状态下,进行RFID标签80的读取评价。测定使用读写器读取RFID标签80时从读写器读取部到RFID标签80的最大距离(以后称为读取距离)。另外,这时使用的IC芯片的大小为0.5mm×0.5mm×0.1mm左右,静电容量为0.77pF,工作频率在0.86~0.96GHz附近。
表1是表示测定如图11所示的样品而读取距离最长时的值的结果,所述样品如下形成:通过蚀刻在聚酰亚胺基板1上形成天线20,将在UHF带中工作的IC芯片30引线接合后进行密封。
从该表1可知,在与IC芯片连接而形成电闭合电路的线圈天线和环形天线2中,使用电磁场模拟器得到的共振频率为0.2~2GHz,与其他天线相比大概更接近IC芯片的工作频率0.9GHz左右。另外,与未形成电闭合电路的弯折线天线、环形天线1、旋涡状天线相比,读取距离也获得了读取良好的结果。另外,在使用电磁场模拟器得到的共振频率为0.5~1.5GHz的实施例1a、1b、2a、2b、3b、4c、5c中,得到了5mm以上的通信距离。特别是在接近IC芯片的工作频率0.9GHz左右的共振频率1~1.1GHz的实施例1a、2b、3b中,得到了超过20mm的通信距离(最大的读取距离37mm)。
[表1]
表1
这里,在RFID标签80的大小为长4mm以下×宽4mm以下的情况下,可以将高度设为0.4mm以下。在RFID标签80的大小为长2.5mm以下×宽2.5mm以下的情况下,可以将高度设为0.3mm以下。在RFID标签80的大小为长1.9mm以下×宽1.9mm以下的情况下,可以将高度设为0.3mm以下。
表2是本发明的图7所示的样品的读取距离的测定结果。将形成有与表1中读取良好的2种样品大致相同大小、形状的天线20的RFID标签80各试制20个左右并进行测定。其结果,读取距离在4mm×4mm的正方形样品中为29.5mm,在2.5mm×2.5mm的正方形样品中为19.9mm。
[表2]
表2
当制作天线20时,导线宽度和导线间距离粗则能够成品率优异且稳定地制造。因此,在由工艺上的制约决定了导线宽度/导线间距离的情况下,研究了在确保数cm以上的读取距离的同时能够小型化多大程度。其结果判明,在UHF带中导线宽度/导线间距离为0.2mm/0.2mm的情况下,使RFID标签80的外径小至4mm×4mm的正方形左右是极限。另外判明,在导线宽度/导线间距离为0.1mm/0.1mm的情况下,使RFID标签80的外径小至2.5mm×2.5mm的正方形左右是极限。另外判明,在导线宽度/导线间距离为0.05mm/0.05mm的情况下,使RFID标签80的外径小至1.9mm×1.9mm的正方形左右是极限。
表3是在使用IC芯片的大小为0.5mm×0.5mm×0.1mm左右、工作频率13.56MHz、静电容量17pF的IC芯片的情况下的模拟结果和实验结果。在使用电磁场模拟器得到的共振频率为29MHz的实施例6b中,得到了12mm的通信距离,特别是在使用电磁场模拟器得到的共振频率为14MHz的实施例7b中,得到了110mm的通信距离。另外,在HF带(高频带,HighFrequency Band)的工作频率13.56MHz中,由于频率比UHF带更低,因此必须增大线圈状天线20的电感,判明在导线宽度/导线间距离为0.1mm/0.1mm的情况下,使RFID标签80的外径小至13mm×13mm的正方形左右是极限。
[表3]
表3
这里,在RFID标签80的大小为长13mm以下×宽13mm以下的情况下,可以将高度设为1.0mm以下。
表4是在使用IC芯片的大小为0.5mm×0.5mm×0.1mm左右、工作频率2.45GHz、静电容量0.7pF的IC芯片的情况下的模拟结果和实验结果。在使用电磁场模拟器得到的共振频率为2GHz的实施例8a和使用电磁场模拟器得到的共振频率为2.1GHz的实施例9b中,得到了4mm的通信距离。另外判明,在导线宽度/导线间距离为0.1mm/0.1mm的情况下,使RFID标签80的外径小至1.9mm×1.9mm的正方形左右是极限。
[表4]
表4
工业实用性
本发明的RFID标签可以用作商品、包装、卡片、文件、眼镜、钟表(特别是手表等小型钟表)、半导体、医疗用途(从患者采取的样品等)等产品的管理、识别、信息提示、信息记录、防止伪造的目的。
符号说明
1 基材
10 密封材料
20 天线
30 IC芯片
40 引线接合的引线
50 线圈(天线)
60 电容器(IC芯片)
70 电阻(IC芯片。模拟时设定的端口)
80 RFID标签
90 不锈钢板
100 抗蚀剂
Claims (19)
1.一种RFID标签,其具有单层天线、以与所述天线不重合的方式而通过引线接合连接的大小为小于或等于0.6mm×0.6mm的正方形的IC芯片、以及密封该IC芯片和天线的密封材料,
所述天线为配置在所述IC芯片的外周部且包含以具有间隙的方式邻接的构成部分的线圈天线,在所述天线的间隙配置有所述密封材料,
所述天线,在截面视图中,像蘑菇那样具有伞,
导线间距离相对于所述天线的导线宽度为0.2mm比0.2mm~0.05mm比0.05mm的范围,
电路的由电磁场模拟器得到的共振频率f0为IC芯片的工作频率或者在其附近,所述电路是包含所述天线的电感L和所述IC芯片的静电容量C而形成的,
通过在以具有所述间隙的方式邻接的天线的构成部分之间产生电容成分,进一步使配置在所述天线的间隙的所述密封材料的相对介电常数做贡献,以具有所述间隙的方式邻接的天线的构成部分提供静电容量,使具有所述IC芯片和配置在其外周部的天线的构成整体的实质静电容量与所述IC芯片单一物体的静电容量相比增加。
2.一种RFID标签,其具有单层天线、隔着金属层配置且与所述天线通过引线接合电连接的大小为小于或等于0.6mm×0.6mm的正方形的IC芯片、以及密封该IC芯片和天线的密封材料,
所述天线为配置在所述IC芯片的外周部且包含以具有间隙的方式邻接的构成部分的线圈天线,在所述天线的间隙配置有所述密封材料,
所述天线,在截面视图中,像蘑菇那样具有伞,
导线间距离相对于所述天线的导线宽度为0.2mm比0.2mm~0.05mm比0.05mm的范围,
包含所述天线的电感L和所述IC芯片的静电容量C而形成的电路的由电磁场模拟器得到的共振频率f0为IC芯片的工作频率或者在其附近,
通过在以具有所述间隙的方式邻接的天线的构成部分之间产生电容成分,进一步使配置在所述天线的间隙的所述密封材料的相对介电常数做贡献,以具有所述间隙的方式邻接的天线的构成部分提供静电容量,使具有所述IC芯片和配置在其外周部的天线的构成整体的实质静电容量与所述IC芯片单一物体的静电容量相比增加。
3.根据权利要求1或者2所述的RFID标签,包含天线的电感L和IC芯片的静电容量C而形成的电路的共振频率f0为根据下述(1)式,通过电磁场模拟器求出的共振频率,
4.根据权利要求1或者2所述的RFID标签,IC芯片的工作频率为0.86~0.96GHz,包含天线的电感L和IC芯片的静电容量C而形成的电路的共振频率f0为0.2~2GHz,
或者IC芯片的工作频率为13.56MHz,所述共振频率f0为13.56~29MHz,
或者IC芯片的工作频率为2.45GHz,所述共振频率f0为2~2.45GHz。
5.根据权利要求1或者2所述的RFID标签,RFID标签的大小为长13mm以下、宽13mm以下以及高1.0mm以下,或者长4mm以下、宽4mm以下以及高0.4mm以下,或者长2.5mm以下、宽2.5mm以下以及高0.3mm以下,或者长1.9mm以下、宽1.9mm以下以及高0.3mm以下。
6.根据权利要求1或者2所述的RFID标签,工作频带为13.56MHz~2.48GHz。
7.根据权利要求1或者2所述的RFID标签,工作频带为0.86~0.96GHz。
8.根据权利要求1或者2所述的RFID标签,密封材料的相对介电常数为2.6以上。
9.根据权利要求1或者2所述的RFID标签,通过使用以环氧树脂、碳以及二氧化硅为主要成分的密封材料而提高了耐热性。
10.根据权利要求1或者2所述的RFID标签,其具有天线、与该天线连接的IC芯片以及密封该IC芯片和天线的密封材料,所述RFID标签如下获得:使用抗蚀剂在不锈钢板上形成图案,通过镀敷在无抗蚀剂部分形成金属层或作为天线的金属,抗蚀剂剥离后搭载IC芯片并电连接所述金属与IC芯片,使用密封材料将所述金属和所述IC芯片密封,仅将不锈钢板剥离,从而得到。
11.根据权利要求10所述的RFID标签,金属为以镍作为主要成分的金属。
12.根据权利要求10所述的RFID标签,通过镀敷形成的金属在RFID标签中心侧比在表层侧更粗。
13.根据权利要求10所述的RFID标签,金属露出于表面。
14.一种半导体封装,通过将权利要求13所述的RFID标签全都密封,从而使RFID标签的金属不露出于表面。
15.一种权利要求1~10中任一项所述的RFID标签的制造方法,所述RFID标签具有天线、与该天线连接的IC芯片、以及密封该IC芯片和天线的密封材料,所述RFID标签如下获得:使用抗蚀剂在不锈钢板上形成图案,通过镀敷在无抗蚀剂部分形成金属层或作为天线的金属,抗蚀剂剥离后搭载IC芯片并电连接所述金属与IC芯片,使用密封材料将所述金属与所述IC芯片密封,仅将不锈钢板剥离,从而得到。
16.根据权利要求15所述的RFID标签的制造方法,金属为以镍作为主要成分的金属。
17.根据权利要求15或者16所述的RFID标签的制造方法,通过镀敷形成的金属在RFID标签中心侧比在表层侧更粗。
18.根据权利要求15或者16所述的RFID标签的制造方法,金属露出于密封材料的表面。
19.一种半导体封装的制造方法,通过将权利要求18中所述的金属露出于密封材料表面的RFID标签全都密封,从而使RFID标签的金属不露出于表面。
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TWI564811B (zh) | 2017-01-01 |
KR20140068209A (ko) | 2014-06-05 |
TW201322139A (zh) | 2013-06-01 |
JP5776780B2 (ja) | 2015-09-09 |
JPWO2013047680A1 (ja) | 2015-03-26 |
US9171244B2 (en) | 2015-10-27 |
WO2013047680A1 (ja) | 2013-04-04 |
CN104025126A (zh) | 2014-09-03 |
KR101609959B1 (ko) | 2016-04-06 |
US20140224887A1 (en) | 2014-08-14 |
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