TW201240157A - Encapsulation material forming method - Google Patents

Encapsulation material forming method Download PDF

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Publication number
TW201240157A
TW201240157A TW101100743A TW101100743A TW201240157A TW 201240157 A TW201240157 A TW 201240157A TW 101100743 A TW101100743 A TW 101100743A TW 101100743 A TW101100743 A TW 101100743A TW 201240157 A TW201240157 A TW 201240157A
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Taiwan
Prior art keywords
cavity
resin
block
sealing material
film
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TW101100743A
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Chinese (zh)
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TWI481081B (en
Inventor
Dong-Joo Hwang
Shin-Kyung Kim
Young-Gyu Choi
Dae-Su Seuk
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Shinhan Diamond Ind Co Ltd
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Publication of TW201240157A publication Critical patent/TW201240157A/en
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Publication of TWI481081B publication Critical patent/TWI481081B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565Moulds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)

Abstract

The present invention discloses an encapsulation material forming method. The method includes an insert cavity block disposing step of disposing an insert cavity block, which has a resin inlet port and a molding cavity, on a substrate; a resin loading space forming step of forming a resin loading space surrounded by a film on a side facing the insert cavity block; an encapsulation material forming step of allowing a bottom of the resin loading space to approach the insert cavity block, so that the molding cavity is filled with a resin in the resin loading space through the resin inlet port; and a film separating step of separating and removing the film from the insert cavity block in a state where surplus solid resins remaining on a surface of the insert cavity block are adhered to the film, after the resin is cured.

Description

201240157 4093lpif 六、發明說明: 【發明所屬之技術領域】 於半導體晶片的封止材卿成方法,且 產:種適用於形成發光二極體封裝(package) 產扣的封止㈣_止材_成方法。 【先前技術】 1旨來形成封止材料以便將晶片封裝起來的技術被 口>衣以^括半導體晶片(如發光二極體晶片)的封裝產 '根據最新產品的技術水準和特性以及市場需求,諸如 發光-極體縣等半導體封裝正日輕輕、㈣、變短、 變小。繁於此趨勢’加之為了降低原料消耗,已對封止材 料的形成進行了積極的研究,讀使形成封止材料所用的 樹脂的量最小化。 作為封止材料形成技術,轉移成型(transfer m〇kimg)、射出成型(inJ’ecti〇n molding)以及二次成型 (overmolding)(或壓縮成型(c〇mpressi〇nm〇lding)) 是本領域中眾所周知的。 就轉移成型而言,為了以用作原料的未固化(uncured) 的樹脂來填充實施成型的空腔(cavity),首先將樹脂提供 給形成在模具中的通口(P〇rt(s)),然後在上方模具和下 方模具閉合的狀態下對通口施加外力,使得樹脂能夠依序 經過流槽(runner)和閘(gate)而進入空腔。當空腔完全 充滿樹脂後,流經閘的樹脂在預定的時間内被固化。封止 材料或包括封止材料的產品從模具上被分離。此時,殘留 4 201240157 4093 lpif 在通口、流槽以及閘中的剩餘樹脂從產品上被分離,然後 將其丢棄。 如上所述,由於在轉移成型(或射出成型)中樹脂要 轉移較長的路徑,所以必須使用較大流量的樹脂。另外, 由於通口、流槽以及閘相比形成封止材料的空腔而古且有 較大的容積,且通口、流槽以及閘中殘留的樹脂被丟棄, 所以存在著樹脂損耗過度增大的缺點。因此,儘管轉移成 型擁有眾多優點,如成型精確度佳且成型尺寸穩定性高, 但匕也具有内在問題,即因樹脂消耗過度而導致其經濟效 盈大大降低。 相比之下,與轉移成型不同的是,二次成型將樹脂直 接提供給空腔,而不使用通口、流槽或閘,然後對樹脂進 行壓縮以形成封止材料。如此一來,因為樹脂的消耗會大 大減少,所以二次成型在經濟方面具有優勢。然而,在習 知的一··人成型中,由於在樹脂壓縮過程中空腔容積沿著成 型厚度方向而減小或發生變化’所以成型厚度會隨著樹脂 的供應而變化。此外’當以批量形式來為多個元件形成封 止材料時,習知的二次成型具有優勢,但問題是,用習知 =二次成型來生產特定的產品很困難。具體而言,當使用 習知的二次成型來為具有多個通孔(through-holes)的引 線框$板(lead frame substrate)上的半導體晶片形成封止 材料%,樹脂會經由這些通孔而流出。因此,習知的二次 成型必須進行(例如)預處理,隸漏帶之_物品將通 孔堵住,這非常不方便,非常麻煩。 201240157 4093 lpif 就表面安裝元件(surface mounted device, SMD )式發 光二極體封裝(其占發光二極體封裝產品的大部分)而言, 需要一個圍繞著發光二極體晶片的反光板來增強 率。反光板是一種藉由射出成型和將苯丙醇胺 (phenylpropan〇iamine,PPA)整合在引線框基板上而形成 的產品,其中引線框基板是藉由將金屬圖案化而製成,且 反光板具有一開口(opening),其用來容納半導體晶片。 為了二次成型能夠用在此類應用中,應當形成封止材料或 透鏡來覆蓋此開口。因此,若樹脂塗在下方模具的整個空 腔上,則包括反光板之外周邊在内的引線框的非必要的區 域也會形成封止材料。因此,裝置或封裝之間的間隙或^ 距(pitch)越大,所需的棄置性樹脂消耗就越大,這將在 成型製程或任何後續製程中進一步造成額外的問題。此 外,若為了減小棄置性樹脂消耗而形成薄薄的一層封止材 料,則反光板與封止材料之間的黏附會變差,以致於在成 型製程後的任何後續製程中封止材料可能會分離,從而導 致其他問題。 同時,封止材料形成後’為了分離出產品,目前使用 的是昂貴的離型膜(releasing film)。離型膜的典型實例 包括氟化合物樹脂膜’如PTFE、PFA、FEP以及ETFE (由 Asahi Glass公司製造,商標FiuonBETFE),所有這些離 型膜都包含具有非粘滯性的氟成分。在現有的技術中,使 用昂貴的離型膜導致經濟效益降低。此外,還存在一些問 題’即多餘的固態樹脂黏附在離型膜對面的模具或塊體 6 201240157 4093 lpif (=k)上,也就是支#產品的模具或塊體上 二=除這些多餘的固態樹脂,就d :體=來 的成型,則封止材料 【發明内容】 『技術問題』 個日月是為了解決先前技術的上述問題。本發明的一 觀良的封止材卿成方法,此方法可在 、材料形成後容易地移除多餘的固態樹脂。 『技術方案』 依知本發明為實現其目的而提出的一觀點,提供一種 封止材料形成方法,此方法包括:嵌人空腔塊(cavity 〇ck)配置步驟,將具有樹脂人口和成楚空腔的嵌入空腔 f配,基板上;樹脂裝載空間形成步驟,用以形成樹脂 裝載空間’其正對嵌人空腔塊的—側被—層薄膜圍繞著; 封止材料形成步驟,使樹脂裝載空間的底部靠近嵌入空腔 塊,以便使樹脂裝載空間内的樹脂經由樹脂入口來填充成 型工腔,以及薄膜分離步驟,樹脂固化後,在嵌入空腔塊 之表面上所殘留的多餘的固態樹脂黏附在薄膜上的狀態 下,使薄膜從嵌入空腔塊上分離並將其移除。 較佳的是,在嵌入空腔塊配置步驟中,將離型劑塗在 嵌入空腔塊的正對樹脂裴載空間的表面上。 較佳的是,嵌入空腔塊配置步驟包括:將基板安裝在 201240157 4093 lpif 第一模具上;以及將嵌入空腔塊安裝在基板上。 較佳的是,在樹脂裝載空間形成步驟中,正對第一模 具且具有凹面空間的第二模具被_覆蓋以形成樹脂裝^ 空間,第二模具包括空腔壓縮塊和圍繞此空腔壓 置的空腔固持塊,凹面空間是由空腔固持塊與空腔壓縮塊 之間的高度差所形成。 較佳的是,在封止材料形成步驟中,空腔固持塊上移 或下移1直到空腔固持塊接觸到嵌入空腔塊為止。在空腔 固持塊停止移動的狀態下,空腔壓縮塊繼續上移或下移, 以便將樹脂裝載空間中的樹脂注射到成型空腔内,其中, 在薄膜分離步驟中,第二模具脫離嵌入空腔塊,使得薄膜 矛钻附在此薄膜上的多餘的固態樹脂脫離嵌入空腔塊。 第一模具可以是上方模具或下方模具。若第一模具是 上方模具,則第二模具是下方模具。相反,若第一模具是 下方模具,則第二模具是上方模具。 『有益效果』 依知如此構造的本發明,當使用壓縮成型技術來形成 1來封^基板上的發光二極體晶片等半導體的封止材料 日才刀無而使用昂貴的離型膜,所以可提高經濟效益。此外, 依Α本發明’由於多餘的固態樹脂可以容易地從嵌入空腔 &和封止材料上移除’所以製造產品所用的成本可大大降 低:再者’因離型膜以及多餘的固態樹脂不易從所形成的 產。口的封止材料上分離的現象所導致的許多習知的品質下 降問題也可得以解決。 8 201240157 4093 lpif 【實施方式】 下面將配合所附圖式來詳細闡述本發明的較佳實施 例。另外,提供這些實施例是為了本領域具通常技能者能 夠更好地瞭解本發明,本發明並不限於這些實施例。 ,圖1至圖3是依照本發明之一實施例的一種封止材料 形成裝置的橫剖面圖,它們分別對應於成型初期的第一位 置對應於成型中期的第二位置以及對應於成型末期的第 二位置,且圖4是用來展示圖3所示之封止材料形成裝置 的重要部分的放大橫剖面圖。圖5是用來展示封止材^完 全形成後多餘的固態樹脂被分離時的狀態的橫剖面圖。 如圖1至圖5所示,本實施例之封止材料形成裝置是 一種二次成型式或擠製成型(extrusi〇n_m〇lding)式形成裝 置,其包括上方模具20、下方模具30以及介於兩者之間 的嵌入空腔塊40。為了使下方模具上移或下移來執行樹脂 壓模(compression-mold),例如,可使用如壓力壓縮機 (press compressor)等升降機構,但這在圖中並未繪示。 上方模具20與下方模具3〇分別配置在如壓力壓縮機 寺升降機構的上知部位和下端部位,且位於彼此對面。上 方模具20及/或下方模具3〇可具有加熱元件(未繪示), 用來將樹月曰加熱到預設的溫度。在本實施例中,封止材料 形成在具有引線框11的基板10上,且基板10包括:發光 二極體晶片12,其安裝在引線框η上;以及多個反光板 13,其具有多個開口,分別容納各別的發光二極體晶片 12。另外,封止材料形成後,基板1〇被切割,使其分成多 «*·- 9 201240157 4093 lpif 個表面安裝元件(SMD)式發光二極體域, 具有多個通孔,這是由引線_的圖案所導致Ύ整= 明書中’術語“基板,,定義為包括安裝在上方模具20或下方 核具30上以便形成封止材料的所有難的物件。此外 各圖所示,基板’其作域止材卿成所在的物件,是 由將發光二極體晶片安裝在引線框上而製成的 ^ 並不限於此情形。 1 一明 利用早獨提供的基板供應裝置(未输示)來將基板ι〇 提供給上方模具2G,且將其絲在上方模具2()上 將基板10安裝在上方模具2〇上,可使用真空吸附法 (vacuum absorption meth〇d )或夾持法(也 method),但是也可使用任何其他方法來將基板⑺安 上方模具2G上。基板供應裝置是在上方模具2()與下^模 具30彼此隔開預定的距離的狀態下藉由壓力驅動單元來 提供基板10。安裝在上方模具2〇上的基板1〇經配置以使 得基板10的用來形成封止材料的寬表面朝著下方模具如 此外,嵌入空腔塊40被安裝在基板1〇上,其中基板 10被安裝在上方模具20上。再如圖4所示,|入空腔塊 40在一個表面上具有多個成型空腔41,且在另一表面上具 有多個分別連接到成型空腔41的樹脂入口(或閑)42。此 外,嵌入空腔塊40被安裝在基板1〇上,使得多個成型空 腔41朝向基板1〇,且多個樹脂入口 42朝向位於下方模具 30上的樹脂裝載空間%。 如上所述,基板10的一個表面上包括發光二極體晶 201240157 4093 lpif 储μ44/ —極體B日片12’且反光板13的開σ必須充 材料。為此’反光板13要實質上祕地配入⑽ed Μ 空腔塊4〇的對應的成型空腔41。因此,在成型 為了/*’實際上只有反光板13的開口可充滿樹脂R。 右几^封止材料形成想要的形狀,成型空腔41可設計成具 pwj形或其他想要的形狀。下方模具3G的樹脂裝載空 =的_旨如空賴縮塊31的壓迫,以受壓方式經由樹 :二42而流入成型空腔4卜然後被固化,從而形成用 、、反光板13之開口中的發光二極體晶片12的封止材 =若不同於本實關,基板1G不包減統13,則圖 式中破反光板13佔據的空間也會充滿樹脂。 請再參照圖卜圖2、® 3以及圖5,下方模具3〇包 配置在基底(base) 3上的空腔壓縮塊31和空腔固持塊 。基底3㈣置以連接到升降機構(未繪示),以便在 垂直方向上被升降機構驅動。空腔壓魏31被固定在基底 3的上表面的中心區域’且空腔固持塊%被安裝在基底3 士的彈性構件37以方式支撐著。若絲3經操作而上 移,則空腔壓縮塊31和空腔固持塊36會一同上移。狹後, 若空腔固贼36因接觸到另-構件(在本實施例中為嵌入 空腔塊40)而停止上移’則只有空腔壓縮塊31會伴隨著 彈性構件37的壓縮而上移預定的高度。 依照本實施例,由於空腔壓縮塊31的外周邊總是低 於空腔固持塊36,所以在下方模具%的上方形成〆個由201240157 4093lpif VI. Description of the Invention: [Technical Fields of the Invention] A method for forming a sealing material for a semiconductor wafer, and a method for producing a package for a light-emitting diode package (four)_stop material_ Into the method. [Prior Art] A technique for forming a sealing material for encapsulating a wafer by a package of a semiconductor wafer (such as a light-emitting diode wafer) is based on the technical level and characteristics of the latest products and the market. Demand, such as illuminating - polar body county and other semiconductor packages are light, (four), shorter, smaller. In addition, in order to reduce the consumption of raw materials, active research has been conducted on the formation of a sealing material, and the amount of the resin used to form the sealing material is minimized. As a sealing material forming technique, transfer molding, injection molding (inJ'ecti〇n molding), and overmolding (or compression molding (c〇mpressi〇nm〇lding)) are known in the art. Well known in the middle. In the case of transfer molding, in order to fill a cavity for performing molding with an uncured resin used as a raw material, the resin is first supplied to a port (P〇rt(s)) formed in the mold. Then, an external force is applied to the port in a state where the upper mold and the lower mold are closed, so that the resin can sequentially enter the cavity through the runner and the gate. When the cavity is completely filled with the resin, the resin flowing through the gate is cured for a predetermined period of time. The sealing material or the product including the sealing material is separated from the mold. At this point, Residue 4 201240157 4093 lpif The remaining resin in the ports, runners, and gates is separated from the product and discarded. As described above, since the resin is transferred to a long path in transfer molding (or injection molding), it is necessary to use a resin having a large flow rate. In addition, since the port, the flow channel, and the gate have a larger volume than the cavity forming the sealing material, and the resin remaining in the port, the flow cell, and the gate is discarded, there is excessive increase in resin loss. Big disadvantages. Therefore, although the transfer molding has many advantages such as good molding accuracy and high dimensional stability, it has an inherent problem that the economic efficiency is greatly reduced due to excessive resin consumption. In contrast, unlike transfer molding, the overmolding provides the resin directly to the cavity without the use of a port, runner or gate, and then compresses the resin to form a sealing material. As a result, secondary molding is economically advantageous because the consumption of the resin is greatly reduced. However, in the conventional one-man molding, since the cavity volume is reduced or changed in the thickness direction of the resin during the compression process, the molding thickness varies depending on the supply of the resin. Further, conventional overmolding has an advantage when forming a sealing material for a plurality of components in a batch form, but the problem is that it is difficult to produce a specific product by conventional = secondary molding. Specifically, when a conventional overmolding is used to form a sealing material % for a semiconductor wafer on a lead frame substrate having a plurality of through-holes, the resin passes through the through holes. And out. Therefore, the conventional secondary molding must be carried out, for example, by pre-processing, and the article of the leaky band blocks the through hole, which is very inconvenient and troublesome. 201240157 4093 lpif For surface mounted device (SMD) LED packages, which account for the majority of LED packages, a reflector around the LED chip is required to enhance rate. The reflector is a product formed by injection molding and integrating phenylpropan〇iamine (PPA) on a lead frame substrate, wherein the lead frame substrate is formed by patterning a metal, and the reflector There is an opening for accommodating a semiconductor wafer. For overmolding to be used in such applications, a sealing material or lens should be formed to cover the opening. Therefore, if the resin is applied to the entire cavity of the lower mold, the unnecessary region of the lead frame including the outer periphery of the reflector also forms a sealing material. Thus, the greater the gap or pitch between the devices or packages, the greater the consumption of the desired repellent resin, which further creates additional problems in the molding process or any subsequent process. In addition, if a thin layer of sealing material is formed in order to reduce the consumption of the repellent resin, the adhesion between the reflector and the sealing material may be deteriorated, so that the sealing material may be in any subsequent process after the molding process. Will separate, causing other problems. At the same time, after the sealing material is formed, in order to separate the product, an expensive release film is currently used. Typical examples of the release film include a fluorine compound resin film such as PTFE, PFA, FEP, and ETFE (manufactured by Asahi Glass Co., Ltd., trade name FiuonBETFE), and all of these release films contain a fluorine component having non-viscosity. In the prior art, the use of expensive release films results in reduced economic benefits. In addition, there are some problems that the excess solid resin adheres to the mold or block 6 on the opposite side of the release film, 201240157 4093 lpif (=k), that is, the mold or block of the product #2, except for these extra Solid resin, in the case of d: body = molding, sealing material [invention] "Technical problem" The sun and the moon are to solve the above problems of the prior art. The invention is a method for forming a good sealing material which can easily remove excess solid resin after the material is formed. 『Technical Solution』 In view of the point that the present invention provides for the purpose of the present invention, a method for forming a sealing material is provided, the method comprising: a cavity 〇ck configuration step, which has a resin population and a Chu a cavity embedded in the cavity, on the substrate; a resin loading space forming step for forming a resin loading space that is adjacent to the side-by-layer film of the embedded cavity block; and a sealing material forming step The bottom of the resin loading space is close to the embedded cavity block, so that the resin in the resin loading space fills the molding cavity through the resin inlet, and the film separation step, after the resin is cured, the excess remaining on the surface embedded in the cavity block The solid resin adheres to the film, and the film is separated from the embedded cavity block and removed. Preferably, in the step of embedding the cavity block, the release agent is applied to the surface of the cavity facing the resin carrying space. Preferably, the step of embedding the cavity block comprises: mounting the substrate on the first mold of 201240157 4093 lpif; and mounting the embedded cavity block on the substrate. Preferably, in the resin loading space forming step, the second mold facing the first mold and having a concave space is covered to form a resin mounting space, and the second mold includes a cavity compression block and a pressure around the cavity The cavity holding block is formed by the difference in height between the cavity holding block and the cavity compressing block. Preferably, in the sealing material forming step, the cavity holding block is moved up or down by 1 until the cavity holding block contacts the embedded cavity block. In a state where the cavity holding block stops moving, the cavity compression block continues to move up or down to inject the resin in the resin loading space into the molding cavity, wherein in the film separation step, the second mold is de-embedded The cavity block causes the excess solid resin attached to the film by the film spear to be detached from the cavity block. The first mold may be an upper mold or a lower mold. If the first mold is the upper mold, the second mold is the lower mold. Conversely, if the first mold is the lower mold, the second mold is the upper mold. [Advantageous Effects] According to the present invention structured as described above, when a semiconductor sealing material such as a light-emitting diode wafer on a substrate is formed by using a compression molding technique, an expensive release film is used, so that an expensive release film is used. Can improve economic efficiency. Further, according to the present invention, since the excess solid resin can be easily removed from the embedded cavity & and the sealing material, the cost of manufacturing the product can be greatly reduced: in addition to the release film and the excess solid state The resin is not easily produced from the formed. Many of the conventional quality degradation problems caused by the separation of the sealing material on the mouth can also be solved. 8 201240157 4093 lpif [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail in conjunction with the accompanying drawings. Further, the embodiments are provided so that those skilled in the art can better understand the present invention, and the present invention is not limited to the embodiments. 1 to 3 are cross-sectional views of a sealing material forming device corresponding to a first position at the initial stage of molding corresponding to a second position in the middle of molding and corresponding to the end of molding, in accordance with an embodiment of the present invention. The second position, and Fig. 4 is an enlarged cross-sectional view showing an important part of the sealing material forming device shown in Fig. 3. Fig. 5 is a cross-sectional view showing a state in which the excess solid resin is separated after the sealing material is completely formed. As shown in FIG. 1 to FIG. 5, the sealing material forming device of the present embodiment is a secondary forming or extrusion forming device including an upper mold 20, a lower mold 30, and A cavity block 40 is embedded between the two. In order to perform a resin-mold by moving the lower mold up or down, for example, a lifting mechanism such as a press compressor may be used, but this is not shown in the drawings. The upper mold 20 and the lower mold 3 are respectively disposed at the upper and lower end portions of the pressure compressor temple lifting mechanism, and are located opposite to each other. The upper mold 20 and/or the lower mold 3〇 may have heating elements (not shown) for heating the tree raft to a preset temperature. In the present embodiment, a sealing material is formed on the substrate 10 having the lead frame 11, and the substrate 10 includes: a light emitting diode wafer 12 mounted on the lead frame η; and a plurality of light reflecting plates 13 having a plurality of The openings respectively accommodate the respective light emitting diode chips 12. In addition, after the sealing material is formed, the substrate 1 is cut to be divided into a plurality of «*·- 9 201240157 4093 lpif surface mount component (SMD) type light emitting diode domains, having a plurality of through holes, which are led by The pattern of _ leads to Ύ== 'the term' substrate in the book, defined as including all the difficult items mounted on the upper mold 20 or the lower fixture 30 to form the sealing material. In addition, the drawings show the substrate' The object in which the object is formed by mounting the LED chip on the lead frame is not limited to this case. 1 I. Using the substrate supply device provided by the early use alone (not shown) The substrate ι is supplied to the upper mold 2G, and the filament is mounted on the upper mold 2 on the upper mold 2 (), and vacuum absorption meth〇d or clamping method may be used. (also method), but any other method may be used to mount the substrate (7) on the upper mold 2G. The substrate supply device is driven by pressure in a state where the upper mold 2 () and the lower mold 30 are spaced apart from each other by a predetermined distance. Unit to provide the substrate 10. The substrate 1 mounted on the upper mold 2 is configured such that the wide surface of the substrate 10 for forming the sealing material faces the lower mold, and the embedded cavity block 40 is mounted on the substrate 1 , wherein the substrate 10 Mounted on the upper mold 20. As shown in Fig. 4, the entrance cavity block 40 has a plurality of molding cavities 41 on one surface and a plurality of attachment cavities 41 on the other surface, respectively. Resin inlet (or idle) 42. Further, the embedded cavity block 40 is mounted on the substrate 1 such that the plurality of molding cavities 41 face the substrate 1 and the plurality of resin inlets 42 are loaded toward the resin located on the lower mold 30. Space %. As described above, one surface of the substrate 10 includes a light-emitting diode crystal 201240157 4093 lpif reservoir μ 44 / - a polar body B wafer 12 ' and the opening σ of the reflector 13 must be filled with a material. For this purpose, the 'reflector 13 The corresponding molding cavity 41 of the (10)ed 空腔 cavity block 4〇 is to be substantially secretly fitted. Therefore, in the molding for /*', only the opening of the reflector 13 can be filled with the resin R. The desired shape, the shaped cavity 41 can be designed to have a pwj Or other desired shape. The resin loading empty of the lower mold 3G is intended to be pressed by the empty shrinkage block 31, and flows into the molding cavity 4 via the tree: two 42 and is then solidified, thereby forming The sealing material of the light-emitting diode chip 12 in the opening of the reflector 13 = if the substrate 1G is not included in the reduction, the space occupied by the broken reflector 13 in the drawing is filled with resin. Referring again to FIG. 2, FIG. 3 and FIG. 5, the lower mold 3 is wrapped in a cavity compression block 31 and a cavity holding block disposed on a base 3. The base 3 (4) is placed to be connected to a lifting mechanism (not shown) so as to be driven by the lifting mechanism in the vertical direction. The cavity pressure member 31 is fixed to the central portion ' of the upper surface of the substrate 3 and the cavity holding block % is supported by the elastic member 37 of the base member. If the wire 3 is moved up by operation, the cavity compression block 31 and the cavity holding block 36 are moved up together. After the narrowing, if the cavity thief 36 stops moving up due to contact with the other member (in this embodiment, the embedded cavity block 40), only the cavity compression block 31 is accompanied by the compression of the elastic member 37. Move the predetermined height. According to the present embodiment, since the outer periphery of the cavity compression block 31 is always lower than the cavity holding block 36, one of the lower mold % is formed.

S 11 201240157 空腔壓縮塊3 1和空a* m n . 同時,本實施例之封止; 是非離型膜50,其安裴在由 36所形成的凹面空間中。薄 的樹脂裝載空間38,其可根: 的樹脂。薄膜50能夠丄S 11 201240157 Cavity compression block 3 1 and void a* m n . Meanwhile, the sealing of this embodiment; is a non-release film 50 which is mounted in a concave space formed by 36. A thin resin loading space 38, which can be: resin. Film 50 is capable of 丄

祕_防止熔化的齡直接接觸下方模具 30 ’ 夠防g止炼化的樹脂滲漏到下方模具下。 薄膜50是以真空方式(透過下方模具%的空腔壓縮 塊31和工腔固持塊36之間的窄間隙施加真空)進行黏附, 所以在壓縮過程巾能_止樹脂部分渗漏 出去的樹脂裝載 工間38可藉由上述程序而形成。預定的量的固態或液態樹 月曰被均専地裝入到樹脂裝載空間38中。 、當溥膜50覆蓋下方模具30的上端部分時,薄膜50 被文裝在下方模具30上的真空元件(未繪示)以真空方式 來黏附在下方模具3G的上端部分上。與現有的離型膜不同 的是二當形成封止材料時,薄膜5〇是黏附在樹脂上(如圖 5所不),所以,即使當封止材料形成後,多餘的固態樹 脂依然會牢固地粘在薄膜50上。因此,若薄膜5〇被分離, 則多餘的固態樹脂也會連同薄膜5〇 一起被分離。薄膜5〇 可以是在能夠形成封止材料的溫度範圍(例如,從13〇〇c 至200°C的溫度範圍)内可使用的習知的耐熱薄膜,且薄 膜50可由(例如)聚乙婦(卩〇如邮丨咖,pE)、聚丙稀 (polypropylene,PP)、聚對酞酸乙二醋(p〇lyethylene terephthalate,PET)等所製成,它們比習知的離型膜便宜。 12 201240157 4093lpif 尤其是,聚對酞酸乙二酯(PET)薄膜已應用于一般工業、 電氣電子業、封裝業、繪圖業、顯示器產業等各種領域, 因此容易以低價獲得。 同時’嵌入空腔塊40的至少一表面(當形成封止材 料時此嵌入空腔塊40與樹脂接觸的表面)具有介面分離特 性。為了提供介面分離特性,較佳的是將離型劑(來 見圖4)塗在嵌入空腔塊4〇與樹脂接觸的表面上。 下面將依次參照圖1、圖2、圖3以及圖5來進一步 闈述使用封止材料形成裝置在基板上形成封止材料的過 程。 /喷參照圖1,先將基板〗〇安裝在上方模具上然 =將嵌入空腔塊4G安裝在基板1G上。此時,可將離型劑 、在肷入空腔塊40的表面的至少一部分上。 另外’耐熱薄膜50以真空方式被黏附在下方模呈3〇 堍部分,而下方模具3〇因空腔壓縮塊31與空腔固持 所以具有凹面空間,從而形成樹】 塊= 峨載空間38位於正對嵌入空腔 脂心二可= 止/八料空形腔=,^ 面點附力。如上所述,為人* :餘的_、樹脂的表 點附力相對減小,可塗上離型劑。二塊40對樹脂的表面 進订或者這兩個過程也可同時進Secret _ Prevent the age of melting from directly contacting the lower mold 30 ′. Prevent the resin from degreasing from leaking under the lower mold. The film 50 is adhered in a vacuum manner (a vacuum is applied through a narrow gap between the cavity compression block 31 of the lower mold and the cavity holding block 36), so that the resin can be leaked out during the compression process. The workstation 38 can be formed by the above procedure. A predetermined amount of solid or liquid tree sputum is uniformly loaded into the resin loading space 38. When the enamel film 50 covers the upper end portion of the lower mold 30, the film 50 is vacuum-bonded to the upper end portion of the lower mold 3G by a vacuum member (not shown) mounted on the lower mold 30. Different from the existing release film, when the sealing material is formed, the film 5〇 adheres to the resin (as shown in FIG. 5), so even when the sealing material is formed, the excess solid resin is firm. The ground adheres to the film 50. Therefore, if the film 5 is separated, the excess solid resin is also separated together with the film 5〇. The film 5 〇 may be a conventional heat-resistant film which can be used in a temperature range capable of forming a sealing material (for example, a temperature range from 13 〇〇 c to 200 ° C), and the film 50 can be, for example, a poly (e.g., postal coffee, pE), polypropylene (PP), p〇lyethylene terephthalate (PET), etc., which are cheaper than conventional release films. 12 201240157 4093lpif In particular, polyethylene terephthalate (PET) film has been used in various fields such as general industry, electrical and electronics, packaging, graphics, and display industries, so it is easy to obtain at low prices. At the same time, at least one surface of the cavity block 40 (the surface in which the cavity block 40 is in contact with the resin when the sealing material is formed) has interface separation characteristics. In order to provide the interface separation property, it is preferred to apply a release agent (see Fig. 4) to the surface of the cavity block 4 which is in contact with the resin. The process of forming a sealing material on the substrate using the sealing material forming apparatus will be further described below with reference to Figs. 1, 2, 3 and 5 in order. / Ejection Referring to Fig. 1, the substrate is first mounted on the upper mold; then the embedded cavity block 4G is mounted on the substrate 1G. At this point, the release agent can be applied to at least a portion of the surface of the cavity block 40. In addition, the 'heat-resistant film 50 is vacuum-bonded to the lower mold in a 3 〇堍 portion, and the lower mold 3 具有 has a concave space due to the cavity compression block 31 holding the cavity, thereby forming a tree] block = the load space 38 is located Positively embedded in the cavity fat core can be = stop / eight material empty cavity =, ^ face point attached force. As described above, for the person *: the remaining _, the resin has a relatively small attachment force, and can be coated with a release agent. Two 40 pairs of resin surface can be ordered or both processes can be simultaneously entered

S 13 201240157 wyJlpif 行。 上方;下方模具3°的— 型介腔4ι A 空腔塊40時,嵌入空腔塊4〇的成 輯填充型樹 此較佳的是,多個樹脂入口 42可分別連接多個對41因 空腔Μ連接與-個_«空^連靖應的成型 下方^32〇戶=,若基底3在升降機構的操作下上移,則 且停止移:J腔固持塊36會先接觸到嵌人空腔塊4〇, 鱼正對下雜=n—t,在被薄膜5G覆蓋的下方模具30 彳、,、30的嵌入空腔塊4〇之間,由薄 定的樹脂裝载空間38完全閉合。 %所界 如圖3所示’若基底3在升降機構的操作下 t狡則"空腔壓i缩塊31會伴隨著彈性構件37的壓縮而繼續 上移,從而對樹脂裳載空間38内的樹脂造成壓迫 迫導致樹脂裝載空間38越來越小。如圖4所示,若反光板 13與嵌入空腔塊40相接觸之處的壩杆(dambar)表面c 進一步被壓迫,則可能會抑制樹脂轉移到空腔區域7且密 封性能可進一步改善。如上所述,隨著樹脂裴载空間% 越來越小,樹脂轉為直接被壓迫,且受到壓迫的樹脂經由 嵌入空腔塊40所提供的樹脂入口 42而被注射到成型空腔 41中。 201240157 4093lpif 产另外,為了有效地清除上述過程中遺留下來的或產生 ,乳泡(孔隙(voids:) }且提高可成形性(f〇rmability), I形成真空通道,也就是通氣孔。此通氣孔可選擇性地沿 著以下表面而形成··嵌入空腔塊4〇與反光板13的上表面 相接觸的表面以及的㈣持塊36的構成脑裝載空間 之外周邊的上表面相接觸的表面。 再如圖3所示,受壓迫的液體型樹脂在預定時間後固 化’於疋具有透鏡形(形狀由嵌人空腔塊4G之成型空腔 41決定)的封止材料形成在基板10上。此時,應當移除 =餘的固態樹脂經由樹脂入口 42而留在礙入 與溥膜50之間。 吻,…、圖5,下方模具30下移以使得上方模具20盥 和其3L相互分離。安襄在上方模具20上的基板;0 =裳在,1G上的嵌人空腔塊4()脫離下方㈣%和安 二:方d30之上表面的薄膜5〇。此時’多餘的固態 树月曰R (已在成型空腔41中固化 固地黏附在薄膜5。上,將與薄== ί 如此—來,多餘的固態樹脂R,可從嵌入空腔 '面和封止材料的表面上被移除乾淨。 且有ΐΐΓ Γ ·!本發明是由可牢111地軸在111態樹脂上的 成有力的耐熱薄膜所製成,而不是由離型膜所製 有較強的介面分離特性㈣料(例如, 此^ 空腔塊40的與樹脂相接觸的表面上,如 备封止材料形成後,多餘的固態樹脂R,便可連同 201240157 4093 lpif bundle)拆除,、應裝置(未繪示)來打包(in a 脫離模具。在土其他情^入空腔塊4〇,使它們以打包方式 時將其分離,秋後心、,可先拆除嵌人空腔塊4G,且同 圖6呈_^ 2已形成有封止材料的基板。 腔塊JL八丁疋圖5所示的過程後從模具和嵌入空 ==,膜。請參照圖6,可理解的是,薄 時,還可以理解的是二=,一起被移除。此 狀。 後刀離问時它們保留了樹脂入口或閘的形 止材:开;2照本發明之另-實施例的-種使用封 固/二置來執仃的封止材料形成方法的圖式。 不η夕:ί刖述貫施例之封止材料形成方法實質上相同, 不冋=處姐基板ω是以相反方向安裝。 月 > ”、、圖7可私動模具3〇〇位於上部以便配置上方 Γο:=固定模具200位於下部以便配置下方模具。基板 細 具(即固定模具2〇〇)上,且嵌入空腔塊 4〇〇被放置在基板10上。嵌入空腔塊的一個表面上提 ,成型空腔410 ’其中成型空腔41〇開口朝著安裝在下方 吳具、(即固定模具細)上的基板1()。樹脂裝載空間38〇 以及連接樹脂裝載空間380與成型空腔的樹脂入口 42〇形 成在嵌入空腔塊働的正對可移動模具的另一表面 上。薄膜500位於可移動模具3〇〇的下方或彼入空腔塊_ 201240157 4093 lpif 的上方’以位於樹脂裝载空間380的下面。與前述實施例 相似的是’薄膜500圍繞著樹脂裝載空間380。可移動模 具300先下移’使得可移動模具3〇〇的空腔固持塊360接 觸到嵌入空腔塊400 ’薄膜5〇〇介於兩者之間。此外,空 腔壓縮塊310伴隨著彈性構件37〇的壓縮而繼續下移,從 而對樹脂裝載空間380中的樹脂造成壓迫。在巨大的壓力 下,樹脂從樹脂裝載空間380經由樹脂入口而被注射到成 型空腔内^成型空腔中的液體型樹脂發生固化,從而在成 型空腔内形成稠岔且在厚度尺寸上(thickyimensionaUy) 穩定的封止材料。儘管未進行真空黏附,但薄膜5〇〇可保 留在下方的固定模具200 (即下方模具)上,因此可以不 包括用來對薄膜500進行真空黏附的真空元件。 如圖8所不,封止材料形成後,若薄膜5〇〇脫離嵌入 空腔塊400 ’則封止材料形成後殘留在嵌入空腔塊_之 表面上的多餘的固恶樹脂R’也脫離敌入空腔塊侧的表 面同日卞夕餘的固態樹脂R,仍然黏附在薄膜獅上。與前 述實施例相似的是’離型劑可塗在嵌入空腔塊働的^面 上。圖8中未繪示上方的可移動模具。 【圖式簡單說明】 s 17 201240157 4093 lpif 圖5是用來展示依照本發明之一實施例的形成封止材 料且然後將多餘的固態樹脂連同薄膜一起分離並移除的過 程的橫剖面圖。 圖6是在圖5所示之過程中連同多餘的固態樹脂一起 被分離和移除的薄膜的照片。 圖7與圖8是依照本發明之另一實施例的一種封止材 料形成方法的圖式。 【主要元件符號說明】 3 :基底 10 :基板 11 :引線框 12:發光二極體晶片(或半導體晶片) 13 :反光板 20 :上方模具 30 :下方模具 31、310 :空腔壓縮塊 36、 360 :空腔固持塊 37、 370 :彈性構件 38、 380 :樹脂裝載空間 40、 400 :嵌入空腔塊 41、 410 :成型空腔 42、 420 :樹脂入口 43 :塌搁杆表面 50、500 :薄膜 18 201240157 4093lpif 200 :固定模具 300 :可移動模具 401 :離型劑 R :樹脂 :多餘的固態樹脂 19S 13 201240157 wyJlpif line. Above; when the lower mold 3°-type cavity 4ι A cavity block 40, the embedded filling tree embedded in the cavity block 4〇 preferably, the plurality of resin inlets 42 can respectively connect the plurality of pairs 41 The cavity Μ is connected with a _« 空^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ The human cavity block 4〇, the fish facing the lower side = n-t, between the embedded cavity blocks 4〇 of the lower molds 30 彳, 30, 30 covered by the film 5G, is filled with a thin resin loading space 38 Completely closed. The boundary of % is as shown in Fig. 3. If the substrate 3 is operated under the operation of the lifting mechanism, the cavity pressure i is gradually moved upward along with the compression of the elastic member 37, thereby causing the resin to carry the space 38. The resin inside causes a pressure to cause the resin loading space 38 to become smaller and smaller. As shown in Fig. 4, if the surface c of the dabar where the retroreflective sheeting 13 is in contact with the cavities 40 is further pressed, the transfer of the resin to the cavity region 7 may be inhibited and the sealing performance may be further improved. As described above, as the resin load space % becomes smaller, the resin is directly pressed, and the pressed resin is injected into the molding cavity 41 via the resin inlet 42 provided in the cavity block 40. 201240157 4093lpif In addition, in order to effectively remove the remaining or generated in the above process, the foam (voids:) and improve the formability (f〇rmability), I form a vacuum channel, that is, a vent. The pores may be selectively formed along the surface of the surface of the cavity block 4, which is in contact with the upper surface of the reflector 13, and (4) the upper surface of the holder 36 which constitutes the periphery of the brain loading space. Further, as shown in FIG. 3, the pressed liquid type resin is cured on the substrate 10 after a predetermined time of solidification in a lenticular shape (the shape is determined by the molding cavity 41 of the embedded cavity block 4G). At this time, the solid resin that should be removed = remaining between the barrier film 50 via the resin inlet 42. Kiss, ..., Figure 5, the lower mold 30 is moved down so that the upper mold 20 and its 3L Separated from each other. The substrate is mounted on the upper mold 20; 0 = skirt, the embedded cavity block 4 () on the 1G is separated from the lower (four)% and the second: the film on the upper surface of the square d30 5 〇. Excess solid solid tree 曰R (already in the forming cavity 41) The solid adhesion adheres to the film 5, and the thin solid resin R can be removed from the surface of the embedded cavity and the surface of the sealing material. The present invention is made of a strong heat-resistant film which is strong on the 111-state resin, and is not made of a strong interfacial separation property (4) from the release film (for example, the cavity block 40) On the surface in contact with the resin, if the sealing material is formed, the excess solid resin R can be removed together with the 201240157 4093 lpif bundle, and packaged (not shown) (in a from the mold. Other things in the soil into the cavity block 4〇, so that they are separated in the packaging mode, after the autumn heart, you can first remove the embedded cavity block 4G, and the same as Figure 6 _^ 2 has formed a sealing material The substrate. The cavity block JL octagonal 疋 Figure 5 shows the process from the mold and embedded in the empty ==, film. Please refer to Figure 6, it is understandable that when thin, it is also understandable that two =, removed together In the case of the back knife, they retain the shape of the resin inlet or the gate: open; 2 according to the invention For example, a method of forming a sealing material using a sealing/two-set method is used. The method of forming the sealing material is substantially the same, and the method of forming the sealing material is substantially the same. Installed in the opposite direction. Month > ", Figure 7 can be a private mold 3 〇〇 located in the upper part to configure the upper Γο: = fixed mold 200 is located in the lower part to configure the lower mold. Substrate fine (ie fixed mold 2 〇〇) And the embedded cavity block 4 is placed on the substrate 10. The surface of the cavity block is embedded, and the cavity 410 is formed, wherein the cavity 41 is formed with the opening facing the lower part, (ie, fixed The mold is fine) on the substrate 1 (). The resin loading space 38A and the resin inlet 42 which connects the resin loading space 380 with the molding cavity are formed on the other surface of the facing movable mold which is embedded in the cavity block. The film 500 is located below the movable mold 3〇〇 or above the cavity block _ 201240157 4093 lpif to be located below the resin loading space 380. Similar to the previous embodiment, the film 500 surrounds the resin loading space 380. The movable mold 300 is moved down first so that the cavity holding block 360 of the movable mold 3 is in contact with the embedded cavity block 400'. Further, the cavity compression block 310 continues to move downward as the elastic member 37 is compressed, thereby causing compression of the resin in the resin loading space 380. Under great pressure, the resin is injected into the molding cavity from the resin loading space 380 via the resin inlet. The liquid type resin in the molding cavity is solidified, thereby forming a thick enthalpy in the molding cavity and in thickness dimension ( thickyimensionaUy) Stable sealing material. Although vacuum bonding is not performed, the film 5 is retained on the lower fixed mold 200 (i.e., the lower mold), and thus the vacuum member for vacuum bonding the film 500 may not be included. As shown in Fig. 8, after the sealing material is formed, if the film 5〇〇 is detached from the cavity block 400', the excess solid resin R' remaining on the surface of the cavity block after the sealing material is formed is also detached. The solid resin R on the surface of the enemy's side of the cavity is still attached to the film lion. Similar to the previous embodiment, the release agent can be applied to the face of the cavity block. The movable mold above is not shown in FIG. BRIEF DESCRIPTION OF THE DRAWINGS s 17 201240157 4093 lpif FIG. 5 is a cross-sectional view for illustrating a process of forming a sealing material and then separating and removing excess solid resin together with a film in accordance with an embodiment of the present invention. Figure 6 is a photograph of a film which is separated and removed together with the excess solid resin in the process shown in Figure 5. 7 and 8 are views showing a method of forming a sealing material in accordance with another embodiment of the present invention. [Main component symbol description] 3: Substrate 10: Substrate 11: Lead frame 12: Light-emitting diode wafer (or semiconductor wafer) 13: Reflector 20: Upper mold 30: Lower mold 31, 310: Cavity compression block 36, 360: cavity holding block 37, 370: elastic member 38, 380: resin loading space 40, 400: embedded cavity block 41, 410: molding cavity 42, 420: resin inlet 43: collapsed rod surface 50, 500: Film 18 201240157 4093lpif 200 : Fixed mold 300 : Movable mold 401 : Release agent R : Resin: Excess solid resin 19

Claims (1)

201240157 4093 lpif 七、申請專利範圍: 1. 一種封止材料形成方法,包括: 甘欠入空腔塊配置步驟,將嵌入空腔塊配置在基 所述嵌入空腔塊具有樹脂入口和成型空腔;土 , 樹脂裝载空間形成步驟,用來形成樹脂裝载空間,i 正對所述喪人空腔塊的—側被_層薄顧繞著; 八 所、f f止材料形成步驟,使所述樹脂裝餘間的底部靠近 所述腔’從而使所述樹脂裝載空間内的樹脂經由 所速树月日人Π來填充所述成型空腔;以及 入空#_麵化後,在朗於所述嵌 態下:所述输所賴入空腔塊上分離並狀 法,盆中如!·清專利範圍$1項所述之封止材料形成方 ,在所述嵌入空腔塊配置步驟中,將離型劑塗在 所,入空腔塊的正對所述樹脂裝載"的表面上 形成方、^Λ1!專郷圍第1項或第2顿叙封止材料 '八中所述嵌入空腔塊配置步驟包括: 將所述基板安裝在第一模具上;以及 將所述嵌人空腔塊絲在所述基板上。 法,申請專利範㈣3項所述之封止材料形成方 模具i具=3=,空間形成步驟中’正對所述第一 二述==== 腔c縮塊城置的空腔嗎塊,所述凹面空間是 20 2〇124〇l457plf 由所述空腔固持塊與所述空腔壓縮塊之間的高度差所形 成。 5·如申請專利範圍第4項所述之封止材料形成方 法,其中在所述封止材料形成步驟中,所述空腔固持塊上 移或下移,直到所述空腔固持塊接觸到所述嵌入空腔塊, 然彳所述空腔固持塊停止移動的狀態下,所述空腔壓縮 塊繼績上移或下移,以便將所述樹脂裝載空間内的所述樹 脂注射到所述成型空腔中,以及其中,在所述薄膜分離步 驟中,所述第二模具脫離所述嵌入空腔塊,使得所述薄膜 以及黏附在所述薄膜上的所述多餘的固態樹脂脫離所述嵌 入空腔塊。 21201240157 4093 lpif VII. Patent application scope: 1. A method for forming a sealing material, comprising: a step of arranging into a cavity block, arranging the embedded cavity block at the base, the embedded cavity block having a resin inlet and a molding cavity Soil, resin loading space forming step, used to form a resin loading space, i is facing the side of the funeral cavity block _ layer thinning; eight, ff stop material forming steps, so that The bottom of the resin loading chamber is close to the cavity' such that the resin in the resin loading space fills the molding cavity via the speeding tree; and after entering the space, the surface is In the nested state, the heat sink is separated into the cavity block and separated, and the sealing material forming side in the basin is in the step of configuring the embedded cavity block. Applying a release agent to the surface of the cavity, which is formed on the surface of the resin loading surface, and the first or second sealing material is described in the eighth The step of embedding the cavity block includes: mounting the substrate on the first mold; And the cavity block filaments embedded on the substrate. Method, the patent application formula (4) 3 of the sealing material forming square mold i = 3 =, in the space forming step 'to the first two statements ==== cavity c shrink block city block? The concave space is 20 2〇124〇l457plf formed by a difference in height between the cavity holding block and the cavity compression block. 5. The method of forming a sealing material according to claim 4, wherein in the sealing material forming step, the cavity holding block moves up or down until the cavity holding block contacts Embedding the cavity block, and then the cavity holding block is moved up or down in a state in which the cavity holding block stops moving to inject the resin in the resin loading space into the In the molding cavity, and wherein, in the film separating step, the second mold is detached from the embedded cavity block such that the film and the excess solid resin adhered to the film are detached Embedded in the cavity block. twenty one
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