JP2008277470A - Method and device for manufacturing semiconductor package - Google Patents

Method and device for manufacturing semiconductor package Download PDF

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JP2008277470A
JP2008277470A JP2007117966A JP2007117966A JP2008277470A JP 2008277470 A JP2008277470 A JP 2008277470A JP 2007117966 A JP2007117966 A JP 2007117966A JP 2007117966 A JP2007117966 A JP 2007117966A JP 2008277470 A JP2008277470 A JP 2008277470A
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resin
semiconductor package
cavity
thickness
movable cavity
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JP5065747B2 (en
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Takeshi Teramoto
剛 寺本
Kazuhiro Taniguchi
一博 谷口
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Asahi Engineering Co Ltd Fukuoka
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Asahi Engineering Co Ltd Fukuoka
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Abstract

<P>PROBLEM TO BE SOLVED: To resin-seal a wiring substrate with an arbitrary thickness by using one mold without using a plurality of different molds. <P>SOLUTION: This method for manufacturing a semiconductor package 6 is a method for resin-sealing the wiring substrate 12. The upper mold includes a mobile cavity, so as to allow the cavity recessed bottom surface 7a of the mold to be vertically movable. Before the semiconductor package 6 is molded, the thickness (X) of a resin seal layer is predetermined. The mobile cavity is arranged at a position (Y), so as to allow an interval between the wiring substrate 12 and the cavity recessed bottom surface 7a to be wider than the thickness (X) of the resin seal layer. Then, the resin is injected to the cavities of the two molds. Before the resin is hardened, the mobile cavity is moved in a direction approaching the wiring substrate 12 so as to be at the position (X) of the thickness of the resin seal layer. Then, the semiconductor package 6 is molded. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、半導体パッケージの製造方法ないし製造装置に係り、特に、任意の厚さの半導体パッケージを形成でき、さらには当該半導体パッケージに樹脂の未充填を起こさないよう成形することのできる半導体パッケージの製造方法ないし製造装置に関する。     The present invention relates to a semiconductor package manufacturing method or manufacturing apparatus, and in particular, a semiconductor package capable of forming a semiconductor package having an arbitrary thickness, and further capable of forming the semiconductor package so as not to cause unfilling of the resin. The present invention relates to a manufacturing method or a manufacturing apparatus.

従来、一般的な半導体パッケージは、リードフレーム又はサブストレートに半導体素子(例えば半導体集積回路(IC)チップ)を接合した配線基板に樹脂モールドをして製作している。
近年、半導体パッケージの厚さも多様化しており、樹脂モールドに際して、半導体パッケージの厚さが異なる場合には、それに応じて、金型を数多く保有する必要があった。このように金型を多く保有すると、コスト上の問題がある上、異なる厚さの半導体パッケージを製作する際に、わざわざ金型を交換しなければならないという作業効率の低下の問題も生じていた。
また、最近では半導体素子の大きさとほぼ同じ大きさの半導体パッケージが出現している。このような半導体パッケージは、例えばCSP(Chip Size Package;チップサイズパッケージ)と呼ばれている。このような薄い半導体パッケージを成形する場合、前記配線基板と金型のキャビティ部底面との間にできる空間が狭くなっている為、従来の成型方法では樹脂が通りにくくなっており、未充填をおこして成形不良が発生することになる。
Conventionally, a general semiconductor package is manufactured by resin molding on a wiring board in which a semiconductor element (for example, a semiconductor integrated circuit (IC) chip) is bonded to a lead frame or a substrate.
In recent years, the thickness of a semiconductor package has also been diversified. When the thickness of a semiconductor package differs during resin molding, it is necessary to have a large number of molds accordingly. Having many molds in this way has a problem in terms of cost, and when manufacturing a semiconductor package with a different thickness, there has been a problem of lowering work efficiency that the mold must be exchanged. .
Recently, a semiconductor package having a size almost the same as the size of a semiconductor element has appeared. Such a semiconductor package is called, for example, a CSP (Chip Size Package). When molding such a thin semiconductor package, the space formed between the wiring board and the bottom surface of the cavity of the mold is narrow, so that resin is difficult to pass by the conventional molding method, As a result, molding defects occur.

本発明は、上記従来技術の問題点に鑑み、複数の異なる金型を用いることなく、1つの金型を用いて、任意の厚さで配線基板を樹脂封止できるようにすることを課題とし、また、前記配線基板の上の狭い空間を樹脂が通りやすいようにして、樹脂の未充填が発生することを防止することを課題としてなされたものである。     SUMMARY OF THE INVENTION In view of the above-mentioned problems of the prior art, it is an object of the present invention to allow a wiring board to be resin-sealed with an arbitrary thickness using a single mold without using a plurality of different molds. Another object of the present invention is to prevent the resin from being unfilled by making it easy for the resin to pass through a narrow space on the wiring board.

上記課題を解決するため、本発明は次の構成を備える。
すなわち、本発明は、リードフレームまたはサブストレートに半導体素子及び接続ワイヤが配設された配線基板を、対向する2つの金型のパーティング面に狭持し、前記配線基板を樹脂封止する半導体パッケージの製造方法において、前記2つの金型のうち少なくとも上金型には、該金型のキャビティ凹部底面が上下方向に移動可能となるように可動キャビティを設け、該半導体パッケージを成形する前に予め樹脂封止層の厚さを決定し、該配線基板と該キャビティ凹部底面との間隔が前記樹脂封止層の厚さよりも広くなるような位置に該可動キャビティを配置した後、該樹脂を前記2つの金型のキャビティ内に注入し、該樹脂が硬化する前に、該可動キャビティを該配線基板に接近する方向に移動させて前記樹脂封止層の厚さの位置にして該半導体パッケージを成形することを特徴とする半導体パッケージの製造方法である。
In order to solve the above problems, the present invention has the following configuration.
That is, the present invention provides a semiconductor in which a wiring board in which semiconductor elements and connection wires are arranged on a lead frame or a substrate is sandwiched between two opposing mold parting surfaces, and the wiring board is resin-sealed. In the package manufacturing method, before forming the semiconductor package, at least the upper mold of the two molds is provided with a movable cavity so that the bottom surface of the cavity recess of the mold can be moved in the vertical direction. The thickness of the resin sealing layer is determined in advance, and the movable cavity is disposed at a position where the distance between the wiring substrate and the bottom of the cavity recess is wider than the thickness of the resin sealing layer, and then the resin is It is poured into the cavities of the two molds, and before the resin is cured, the movable cavity is moved in a direction approaching the wiring board to be positioned at the thickness of the resin sealing layer. It is a manufacturing method of a semiconductor package, which comprises forming a semiconductor package.

また、本発明は、リードフレームまたはサブストレートに半導体素子及び接続ワイヤが配設された配線基板を、対向する2つの金型のパーティング面に狭持し、前記配線基板を樹脂封止する半導体パッケージの製造装置において、前記2つの金型のうち少なくとも上金型には、該金型のキャビティ凹部底面が上下方向に移動可能となるように可動キャビティを設け、予め決定された樹脂封止層の厚さに応じて可動キャビティの位置を変更することのできる機構を備え、該配線基板と該キャビティ凹部底面との間隔が前記樹脂封止層の厚さよりも広くなるような位置に該可動キャビティを配置した後、該樹脂を前記2つの金型のキャビティ内に注入し、該樹脂が硬化する前に、該可動キャビティを該配線基板に接近する方向に移動させて前記樹脂封止層の厚さの位置にして該半導体パッケージを成形することを特徴とする半導体パッケージの製造装置である。     Further, the present invention provides a semiconductor in which a wiring board in which a semiconductor element and a connection wire are disposed on a lead frame or a substrate is sandwiched between parting surfaces of two opposing molds, and the wiring board is sealed with a resin. In the package manufacturing apparatus, at least an upper mold of the two molds is provided with a movable cavity so that the bottom surface of the cavity recess of the mold can be moved in the vertical direction, and a predetermined resin sealing layer Provided with a mechanism capable of changing the position of the movable cavity according to the thickness of the movable cavity, wherein the movable cavity is positioned at a position where the distance between the wiring board and the bottom surface of the cavity recess is wider than the thickness of the resin sealing layer. After the resin is placed, the resin is injected into the cavities of the two molds, and before the resin hardens, the movable cavity is moved in a direction approaching the wiring board to move the tree. A semiconductor package manufacturing apparatus characterized by in the thickness of the position of the sealing layer forming the semiconductor package.

上記製造方法又は製造装置において、該可動キャビティを所定の加圧力により所定の速度で移動させることができる。     In the manufacturing method or the manufacturing apparatus, the movable cavity can be moved at a predetermined speed by a predetermined pressure.

また、上記製造方法又は製造装置において、該可動キャビティを有する金型のキャビティ凹部の表面上に樹脂フィルムを配設することができる。

Moreover, in the said manufacturing method or manufacturing apparatus, a resin film can be arrange | positioned on the surface of the cavity recessed part of the metal mold | die which has this movable cavity.

本発明に係る可動キャビティを上下に移動させる方法ないし装置を用いることによって、任意の厚さの半導体パッケージを1つの金型で製造することができ、それぞれ異なる厚さの半導体パッケージを製造する場合に、わざわざ別個の金型を用意する必要がなく、コスト面で有利になるとともに、作業効率が格段に向上する。
また、薄い樹脂封止がなされた半導体パッケージを成形する場合にも、未充填をおこすことが無く、成形不良が発生することを防止することができる。
By using the method or apparatus for moving the movable cavity up and down according to the present invention, a semiconductor package with an arbitrary thickness can be manufactured with one mold, and when manufacturing semiconductor packages with different thicknesses, respectively. This eliminates the need to prepare separate molds, which is advantageous in terms of cost and greatly improves work efficiency.
In addition, when molding a semiconductor package with a thin resin seal, unfilling is not caused, and it is possible to prevent a molding defect from occurring.

また、可動キャビティを移動させる際に、該可動キャビティの加圧力及び移動速度を変更することによって、半導体パッケージ毎の樹脂封止層の厚さ、樹脂の種類、加熱温度等に応じた適切な樹脂充填が可能となり、未充填がなく、形成不良でない半導体パッケージを製造することができる。   Also, when moving the movable cavity, by changing the pressure and moving speed of the movable cavity, an appropriate resin according to the thickness of the resin sealing layer, the type of resin, the heating temperature, etc. for each semiconductor package Filling is possible, and there is no unfilling and a semiconductor package that is not poorly formed can be manufactured.

さらに、可動キャビティを有する金型のキャビティ凹部の表面上に樹脂フィルムを配設することによって、該金型のキャビティ内に充填された樹脂が該可動キャビティと該金型側壁との間にできる間隙から漏出するのを防止することができ、バリのない精密な半導体パッケージを製造することが可能になる。   Further, by disposing a resin film on the surface of the cavity concave portion of the mold having the movable cavity, the gap formed between the movable cavity and the mold side wall by the resin filled in the mold cavity. It is possible to prevent leakage from the semiconductor device, and it is possible to manufacture a precise semiconductor package without burrs.

以下、本発明に係る半導体パッケージ製造方法及び製造装置の好適な実施の形態について添付図面と共に詳述する。本実施の形態では、片面モールドされて形成されるSOP(Small Outline Package)タイプ及びQFN(Quad Flat Non-leaded Package)タイプの半導体パッケージに用いられるリードフレーム又はサブストレート4を用いた半導体パッケージ製造方法及び製造装置について説明する。SOPタイプは、平たい長方形のパッケージにおける2つの長辺に、外部入出力用のリードを並べたタイプである。QFNは、パッケージにおける4辺に外部入出力用のピンを配置したもので、パッケージからピンを引き出していないタイプである。もっとも、本発明に係る半導体パッケージの製造方法ないし製造装置によって製造される半導体パッケージは上記のものに限られない。     Preferred embodiments of a semiconductor package manufacturing method and a manufacturing apparatus according to the present invention will be described below in detail with reference to the accompanying drawings. In the present embodiment, a semiconductor package manufacturing method using a lead frame or a substrate 4 used in a SOP (Small Outline Package) type and QFN (Quad Flat Non-leaded Package) type semiconductor package formed by single-sided molding. The manufacturing apparatus will be described. The SOP type is a type in which leads for external input / output are arranged on two long sides of a flat rectangular package. The QFN is a type in which pins for external input / output are arranged on four sides of a package, and no pins are drawn from the package. But the semiconductor package manufactured with the manufacturing method thru | or manufacturing apparatus of the semiconductor package concerning this invention is not restricted to the above.

図1乃至図3は、本発明による実施例の成形法による半導体パッケージの製造方法の各段階における製造装置の要部断面図である。図4は、半導体パッケージ製造方法を示すフローチャートである。図5は、図1乃至図4の下金型2が上昇して型締めされた時の製造装置の全体図である。図6は、この製造方法で製造される半導体パッケージの断面図である。先ず、図1乃至図5に示すような半導体パッケージ製造方法の発明に用いるトランスファー成形用金型1(以下「成形型1」と称す)の構成を説明する。この成形型1は下金型2と上金型3とから構成されている。但し、本実施の形態において、下金型2はキャビティ凹部を有しない平坦状のものである。従って、下金型2の形状は極めて簡単な形状とされており、安価に製造することができる。一方、上金型3のキャビティ凹部7は図1(b)に示すとおり、底面7aを有し、該上金型3は、該キャビティ凹部の側壁8と、該側壁8の内面に沿って上下方向に可動できる可動キャビティ9とで構成され、この可動キャビティ9は、図示しない昇降機構付きの動力源により矢印Z1、Z2方向(上下方向)に移動可能な構成とされている。また、この可動キャビティ9は可動速度調整機構付き(図示省略)の電動モータ、油圧、圧縮空気などの昇降機構付きの動力源により駆動される押圧軸用ブロック10及び押圧軸(図示省略)に連結されている。つまり、可動キャビティ9は、配線基板12(図6参照)の半導体素子(半導体チップ)5が配設されている面に対向する任意の位置で停止でき、配線基板上に形成する樹脂封止層19の厚さに応じて、適宜、可動キャビティ9の停止位置を決定することができる。且つ可動キャビティ9は所定の加圧力により所定の速度で移動させることができるようになっている。この加圧力及び速度は各々任意に変更できる。一例として動力源に電動モータを使用する場合、電圧を上げることにより加圧力を増加し、パルス数の増減により速度を変化させることができる。更に、可動キャビティ9は、圧縮成形した半導体パッケージ6をノックアウトして成形型1より取り出すノックアウト機構を兼ね備えている。       1 to 3 are cross-sectional views of the main part of the manufacturing apparatus at each stage of the semiconductor package manufacturing method according to the molding method of the embodiment of the present invention. FIG. 4 is a flowchart showing a semiconductor package manufacturing method. FIG. 5 is an overall view of the manufacturing apparatus when the lower mold 2 of FIGS. 1 to 4 is raised and clamped. FIG. 6 is a cross-sectional view of a semiconductor package manufactured by this manufacturing method. First, the structure of a transfer molding die 1 (hereinafter referred to as “molding die 1”) used in the invention of the semiconductor package manufacturing method as shown in FIGS. 1 to 5 will be described. The mold 1 is composed of a lower mold 2 and an upper mold 3. However, in the present embodiment, the lower mold 2 is a flat shape having no cavity recess. Therefore, the shape of the lower mold 2 is extremely simple and can be manufactured at low cost. On the other hand, the cavity recess 7 of the upper mold 3 has a bottom surface 7a as shown in FIG. 1B, and the upper mold 3 is vertically moved along the side wall 8 of the cavity recess and the inner surface of the side wall 8. The movable cavity 9 is configured to be movable in the directions of arrows Z1 and Z2 (vertical direction) by a power source with a lifting mechanism (not shown). The movable cavity 9 is connected to an electric motor with a movable speed adjusting mechanism (not shown), a pressing shaft block 10 driven by a power source with a lifting mechanism such as hydraulic pressure and compressed air, and a pressing shaft (not shown). Has been. That is, the movable cavity 9 can be stopped at an arbitrary position facing the surface on which the semiconductor element (semiconductor chip) 5 of the wiring board 12 (see FIG. 6) is disposed, and the resin sealing layer formed on the wiring board According to the thickness of 19, the stop position of the movable cavity 9 can be determined as appropriate. The movable cavity 9 can be moved at a predetermined speed by a predetermined pressure. The pressure and speed can be arbitrarily changed. As an example, when an electric motor is used as a power source, the pressure can be increased by increasing the voltage, and the speed can be changed by increasing or decreasing the number of pulses. Furthermore, the movable cavity 9 also has a knockout mechanism for knocking out the compression-molded semiconductor package 6 and taking it out from the mold 1.

上金型3のキャビティ凹部7の表面には、樹脂18を圧縮成形した際に該樹脂18が、側壁8と可動キャビティ9の間隙から漏出するのを防止するために、樹脂フィルム16を配設しておいてもよい。
また、下金型2が上昇して型締めされたときに接触するパーティング面には、その一例として、キャビティ凹部7内のエアーや封止樹脂に含有するエアーを抜き、成形された半導体パッケージ6でのボイド、ピンホール、樹脂欠けなどの発生を防止する役目をするキャビティ凹部7に通じるエアーベント13も設けられている。
A resin film 16 is disposed on the surface of the cavity recess 7 of the upper mold 3 in order to prevent the resin 18 from leaking from the gap between the side wall 8 and the movable cavity 9 when the resin 18 is compression molded. You may keep it.
For example, the parting surface that comes into contact when the lower die 2 is raised and clamped is, for example, the air in the cavity recess 7 or the air contained in the sealing resin, and molded semiconductor package Also provided is an air vent 13 leading to the cavity recess 7 which serves to prevent the occurrence of voids, pinholes, resin chipping, etc. at 6.

次に、このような構成の成形型1を用いて、リードフレーム又はサブストレート4に半導体素子5及び半導体素子5を接続する接続ワイヤ11が配設された構成の配線基板12(図6参照)を樹脂18で封止する方法を説明する。
先ず、図1(a)に示すように、可動キャビティ9を初期位置に移動させてブレーキにて位置を保持する(図4のフローチャート中のステップS10)。
所定の温度に加熱された上下金型2、3を型開きし、図1(b)に示すようにパーティング面上に配線基板12を載置する。配線基板12は、完成パッケージ6(図6参照)から樹脂封止層19を欠いた構成、即ち可撓性基材(エポキシ等)のサブストレート4に半導体素子5及び接続ワイヤ11が配設された構成であり、後の工程で半導体素子5及び接続ワイヤ11側がキャビティ凹部7内に収容されるよう載置する(ステップS11)。また、ポット14内に樹脂18が載置される。
Next, the wiring board 12 having a configuration in which the semiconductor element 5 and the connection wire 11 for connecting the semiconductor element 5 are disposed on the lead frame or the substrate 4 using the molding die 1 having such a configuration (see FIG. 6). A method of sealing the resin with resin 18 will be described.
First, as shown in FIG. 1A, the movable cavity 9 is moved to the initial position and the position is held by the brake (step S10 in the flowchart of FIG. 4).
The upper and lower molds 2 and 3 heated to a predetermined temperature are opened, and the wiring board 12 is placed on the parting surface as shown in FIG. The wiring board 12 has a configuration in which the resin sealing layer 19 is omitted from the completed package 6 (see FIG. 6), that is, the semiconductor element 5 and the connection wires 11 are arranged on the substrate 4 of a flexible base material (epoxy or the like). The semiconductor element 5 and the connecting wire 11 side are placed so as to be accommodated in the cavity recess 7 in a later step (step S11). A resin 18 is placed in the pot 14.

その後、図2(a)に示すように、半導体素子5及び接続ワイヤ11が配設された配線基板12を載置した状態で下金型2(上金型3の側壁8と可動キャビティ9の位置関係は変化させない)を上昇させ、型締めして下金型2と上金型3とに所定の圧力を加える(配線基板12の表裏の両面をクランプする)(ステップS12)。
次に、上金型3のキャビティ凹部7の底面7a(図1(b)及び図6参照)と配線基板12との間隔を、完成時に要求される半導体パッケージ6の厚さによって決定される樹脂封止層19の厚さ(X)よりやや広い間隔(Y)となるように(図6参照)、上金型3における可動キャビティ9の位置を設定する。ただし、当該位置設定は、前記配線基板のクランプ前に予め行っておいてもよい。
本実施形態では、後述するように、先ず、底面7aと配線基板12との間隔を第2間隔Y(>X)に設定し、樹脂注入後に、底面7aと配線基板12との間隔を第1間隔Xまで縮小することにより、樹脂封止層19の厚さを完成品の厚さとする。ここで、樹脂封止層19の厚さ(第1間隔X)は複数選択することが可能であり、樹脂封止層19の厚さ(第1間隔X)に応じて第2間隔Yを変更することができる。従って、同じ金型1を使用して、2種類以上の異なる厚さを有する半導体パッケージを製造することが可能である。
間隔X及びYは、別々に製造装置に設定しても良いし、XとYとを対応させたテーブルを予め製造装置の記録媒体に格納しておき、Xを入力することによってYが自動的に設定されるようにしても良い。
Thereafter, as shown in FIG. 2A, the lower mold 2 (the side walls 8 of the upper mold 3 and the movable cavities 9) are mounted with the wiring board 12 on which the semiconductor element 5 and the connection wires 11 are placed. The positional relationship is not changed), and the mold is clamped to apply a predetermined pressure to the lower mold 2 and the upper mold 3 (clamp both the front and back surfaces of the wiring board 12) (step S12).
Next, the resin in which the distance between the bottom surface 7a of the cavity recess 7 of the upper mold 3 (see FIGS. 1B and 6) and the wiring substrate 12 is determined by the thickness of the semiconductor package 6 required upon completion. The position of the movable cavity 9 in the upper mold 3 is set so that the gap (Y) is slightly wider than the thickness (X) of the sealing layer 19 (see FIG. 6). However, the position setting may be performed in advance before the wiring board is clamped.
In the present embodiment, as will be described later, first, the interval between the bottom surface 7a and the wiring substrate 12 is set to the second interval Y (> X), and after resin injection, the interval between the bottom surface 7a and the wiring substrate 12 is set to the first interval. By reducing the distance X, the thickness of the resin sealing layer 19 is made the thickness of the finished product. Here, a plurality of thicknesses (first intervals X) of the resin sealing layer 19 can be selected, and the second interval Y is changed in accordance with the thickness (first interval X) of the resin sealing layer 19. can do. Therefore, it is possible to manufacture a semiconductor package having two or more different thicknesses using the same mold 1.
The intervals X and Y may be set separately in the manufacturing apparatus, or a table in which X and Y are associated with each other is stored in advance in the recording medium of the manufacturing apparatus, and Y is automatically entered by inputting X. You may make it set to.

そして、キャビティ凹部7内への樹脂の注入圧力を設定する(ステップS13)。
また、押圧軸用ブロック10または押圧軸にブレーキをかけて、樹脂注入時の樹脂圧でキャビティ凹部7が動かないように保持する。
ステップS13において注入圧力を設定した後、図2(b)に示すように、先ず第1段階でポット14内のプランジャー15を上昇させて溶融した樹脂18aをキャビティ内に圧送してキャビティ凹部7内に充填する(ステップS14,S15)。
その後、図3(a)に示すように、前述した動力源で押圧軸用ブロック10および押圧軸を押圧し、上金型3の可動キャビティ9を、要求される樹脂封止層19の厚さや樹脂18の種類等に応じた所定の加圧力により所定の速度で更に微少下降させ圧縮成形する(ステップS16,S17)。即ち、この速度、加圧力ないしそのタイミングを設定することで、例えば成形に最適な樹脂18を選択し、上下金型2、3の加熱温度を一定に制御した状態にしておけば、溶融した樹脂が最も低粘度で、半導体素子5、サブストレート4に応力が掛からない状態で移動させることが可能である。
速度及び圧力は、完成時の樹脂封止層19の厚さ、樹脂18の種類等応じて最適な値を決定し、設定することができる。なお、速度及び圧力は、配線基板12をクランプする前に予め設定しても良い。また、例えば、樹脂封止層19の厚さ及び樹脂の種類と、最適な速度及び圧力とを対応させたテーブルを予め製造装置の記録媒体に格納しておき、樹脂封止層の厚さ及び樹脂の種類を入力すれば、最適な速度及び圧力が自動的に設定されるようにしても良い。
樹脂封止層19の厚さが0.41mm、樹脂の種類をGE−100LFCS GT60とした場合には、速度を0〜0.3mm/s、圧力を3〜18MPaに設定することが可能である。
And the injection | pouring pressure of the resin in the cavity recessed part 7 is set (step S13).
Further, a brake is applied to the pressing shaft block 10 or the pressing shaft to hold the cavity concave portion 7 so as not to move by the resin pressure at the time of resin injection.
After setting the injection pressure in step S13, as shown in FIG. 2 (b), first, in the first stage, the plunger 15 in the pot 14 is raised and the melted resin 18a is pumped into the cavity to cavity recess 7 The inside is filled (steps S14 and S15).
Thereafter, as shown in FIG. 3 (a), the pressing shaft block 10 and the pressing shaft are pressed by the power source described above, and the movable cavity 9 of the upper mold 3 is moved to the required thickness of the resin sealing layer 19 or the like. The resin 18 is further slightly lowered at a predetermined speed by a predetermined pressure according to the type of the resin 18 and the like, and compression molding is performed (steps S16 and S17). That is, by setting the speed, pressure, or timing thereof, for example, the optimum resin 18 for molding can be selected, and the heating temperature of the upper and lower molds 2 and 3 can be controlled to be constant. It is possible to move the semiconductor element 5 and the substrate 4 in a state where no stress is applied.
The speed and pressure can be determined and set to optimum values according to the thickness of the resin sealing layer 19 at the time of completion, the type of the resin 18, and the like. Note that the speed and pressure may be set in advance before the wiring board 12 is clamped. Further, for example, a table in which the thickness of the resin sealing layer 19 and the type of resin are associated with the optimum speed and pressure is stored in advance in a recording medium of the manufacturing apparatus, and the thickness of the resin sealing layer and If the type of resin is input, the optimum speed and pressure may be set automatically.
When the thickness of the resin sealing layer 19 is 0.41 mm and the resin type is GE-100LFCS GT60, it is possible to set the speed to 0 to 0.3 mm / s and the pressure to 3 to 18 MPa. .

その後、図3(a)に示す状態を所定時間維持させ、樹脂を完全に硬化させた後、図3(b)に示すように上金型3の可動キャビティ9と下金型2とを同時に下方に移動させ、成形された半導体パッケージ6を下金型2に載置した状態で型開きさせた後に、成形型1より取り出す(ステップS18,S19,S20)。そして図6に示すように、サブストレート4上に半導体素子5及び接続ワイヤ11が配設された配線基板12に樹脂封止層19が設けられた半導体パッケージ6を得る。
その後、図1(a)に示すような成形型1の状態に戻し他の半導体パッケーシを圧縮成形開始できるようにして完了する。
(実験例)
図7は、上金型3のキャビティ凹部7の底面7aと配線基板12との間隔を0.2mm以下として樹脂を注入し、半導体パッケージを製造した場合の実験結果である。図7において、「チップ」は図6の半導体素子5に対応する。
同図より、樹脂の未充填箇所(α)が高い頻度で発生することが分かる。また、樹脂封止層19の厚さが0.2mm以下の半導体パッケージを固定金型で製造した場合にも同様の結果になると考えられる。
本実施形態では、配線基板12や樹脂封止層19の厚さに応じて、上金型3のキャビティ凹部7の底面7aと配線基板12との間隔を完成時の樹脂封止層19の厚さより広く任意に設定することができるので、当該間隔が過度に小さく(例えば0.2mm以下)になるのを防止し、これにより樹脂の未充填を防止することができる。
Thereafter, the state shown in FIG. 3A is maintained for a predetermined time to completely cure the resin, and then the movable cavity 9 and the lower die 2 of the upper die 3 are simultaneously placed as shown in FIG. 3B. The mold is moved downward and the molded semiconductor package 6 is opened in a state where it is placed on the lower mold 2 and then removed from the mold 1 (steps S18, S19, S20). Then, as shown in FIG. 6, the semiconductor package 6 is obtained in which the resin sealing layer 19 is provided on the wiring substrate 12 in which the semiconductor element 5 and the connection wires 11 are disposed on the substrate 4.
Thereafter, the state is returned to the state of the mold 1 as shown in FIG. 1A, and the other semiconductor package is completed so that compression molding can be started.
(Experimental example)
FIG. 7 shows the experimental results when a semiconductor package is manufactured by injecting resin with the distance between the bottom surface 7a of the cavity recess 7 of the upper mold 3 and the wiring board 12 being 0.2 mm or less. In FIG. 7, “chip” corresponds to the semiconductor element 5 of FIG. 6.
From the figure, it can be seen that unfilled portions (α) of the resin occur frequently. Further, it is considered that the same result is obtained when a semiconductor package having a resin sealing layer 19 having a thickness of 0.2 mm or less is manufactured by a fixed mold.
In this embodiment, according to the thickness of the wiring board 12 and the resin sealing layer 19, the distance between the bottom surface 7a of the cavity recess 7 of the upper mold 3 and the wiring board 12 is set to the thickness of the resin sealing layer 19 at the time of completion. Since it can be set arbitrarily wider than that, it is possible to prevent the interval from becoming excessively small (for example, 0.2 mm or less), thereby preventing unfilling of the resin.

上述した本発明の実施例である図1乃至図3に示す半導体パッケージの製造方法では、予め決定してある樹脂封止層19の厚さよりもキャビティ凹部内の底面7aと配線基板12との間隔を拡大して、溶融した樹脂18が充満し易い状態に保持するように、金型の可動キャビティ9を上記樹脂封止層の厚さより上昇させ、その後樹脂が硬化し始める前に、該可動キャビティ9を下降させて成形する。即ち、製造段階を第1及び第2段階とに分け、第1段階で所望する樹脂封止層19の厚さを決定するとともに、可動キャビティ9を上昇させて、樹脂18の流動する間隔が拡大された状態で溶融した樹脂18を充填し、第2段階で可動キャビティ9を下降させキャビティ凹部内に充満した余分の樹脂18をポット14内に逆流させることにより、所望の厚さの半導体パッケージを成形する。
かかる方法は、図6に示すような半導体素子5の大きさとほぼ同じ大きさの半導体パッケージ、例えばCSP(チップサイズパッケージ)などに好適であり、半導体素子5及び接続ワイヤ11などが搭載されたサブストレート4への実質的な成形圧力の影響が低減し、この半導体パッケージ6の耐湿性能や機械的強度性能等についての信頼性は優れたものとなる。
また、可動キャビティ9を任意の位置に設定できるので、厚さの異なる半導体パッケージを成形する際に、金型を半導体パッケージ毎に用意する必要がない。図8(a)に示すように、可動キャビティを用いた本発明の方法では、1個の金型を用いて2以上のx種類の半導体パッケージを製造することができるが、キャビティを固定した場合には、x種類の半導体パッケージの製造にはx個の金型が必要になる。よって、本発明によれば、半導体パッケージの製造コストを大幅に低減することが可能である。さらに、樹脂封止時に薄いサブストレート4に変形が生じたり、また、半導体素子5と回路配線との電気的接続部位(例えばワイヤ接続)に負荷が印加されることを防止でき、隣接する接続ワイヤ11同士が接触することを防止することができる。
そして、上金型3のキャビティ凹部に樹脂フィルム16を配設する場合には、側壁8と可動キャビティ9の間隙から溶解した樹脂18が漏出することがなく、バリのない精度の高い半導体パッケージを成形することができる。
尚、本実施例では一つの半導体素子5及び接続ワイヤ11がサブストレート4上に配設された配線基板12で構成された半導体パッケージ6の製造方法を説明したが、例えば、図示省略するがマトリックス状に配列され複数の半導体素子が配設された配線基板で構成された半導体パッケージ、または、マトリックス状に配列された複数の配線基板を一つのパッケージとして成形した後、ダイシング切断方式により個別化する半導体パッケージであっても何らさしつかえなく製造することができる。
また、本実施の形態では、下金型2はキャビティ凹部を有しない平坦状のものとしたが、下金型2はキャビティ凹部を有するものであってもよい。
In the semiconductor package manufacturing method shown in FIGS. 1 to 3 which is an embodiment of the present invention described above, the distance between the bottom surface 7a in the cavity recess and the wiring board 12 is larger than the thickness of the resin sealing layer 19 determined in advance. The movable cavity 9 of the mold is raised from the thickness of the resin sealing layer so that the molten resin 18 is easily filled, and then the movable cavity 9 is moved before the resin starts to cure. 9 is lowered and molded. That is, the manufacturing stage is divided into a first stage and a second stage. In the first stage, the desired thickness of the resin sealing layer 19 is determined, and the movable cavity 9 is raised to increase the interval at which the resin 18 flows. In the second stage, the melted resin 18 is filled, and the movable cavity 9 is lowered in the second stage, and the excess resin 18 filled in the cavity recesses is caused to flow back into the pot 14 to obtain a semiconductor package having a desired thickness. Mold.
Such a method is suitable for a semiconductor package having a size substantially the same as the size of the semiconductor element 5 as shown in FIG. 6, for example, a CSP (chip size package), and the like. The effect of the substantial molding pressure on the straight 4 is reduced, and the reliability of the semiconductor package 6 with respect to moisture resistance, mechanical strength, and the like becomes excellent.
Moreover, since the movable cavity 9 can be set at an arbitrary position, it is not necessary to prepare a mold for each semiconductor package when molding semiconductor packages having different thicknesses. As shown in FIG. 8A, in the method of the present invention using a movable cavity, two or more x types of semiconductor packages can be manufactured using one mold, but the cavity is fixed. In order to manufacture x types of semiconductor packages, x molds are required. Therefore, according to the present invention, it is possible to significantly reduce the manufacturing cost of the semiconductor package. Further, it is possible to prevent the thin substrate 4 from being deformed at the time of resin sealing, and to prevent a load from being applied to an electrical connection portion (for example, wire connection) between the semiconductor element 5 and the circuit wiring. 11 can be prevented from contacting each other.
When the resin film 16 is disposed in the cavity recess of the upper mold 3, the resin 18 dissolved from the gap between the side wall 8 and the movable cavity 9 is not leaked, and a highly accurate semiconductor package without burrs is obtained. Can be molded.
In the present embodiment, the method of manufacturing the semiconductor package 6 including the wiring substrate 12 in which one semiconductor element 5 and the connection wire 11 are arranged on the substrate 4 has been described. A semiconductor package composed of a wiring substrate arranged in a plurality of shapes and arranged with a plurality of semiconductor elements, or a plurality of wiring substrates arranged in a matrix form as a single package, and then individualized by a dicing cutting method Even a semiconductor package can be manufactured without any problem.
In the present embodiment, the lower mold 2 is a flat shape having no cavity recess, but the lower mold 2 may have a cavity recess.

本発明による実施例の成形法による半導体パッケージの製造方法の各段階における製造装置の要部断面図である(その1)。It is principal part sectional drawing of the manufacturing apparatus in each step of the manufacturing method of the semiconductor package by the shaping | molding method of the Example by this invention (the 1). 本発明による実施例の成形法による半導体パッケージの製造方法の各段階における製造装置の要部断面図である(その2)。It is principal part sectional drawing of the manufacturing apparatus in each step of the manufacturing method of the semiconductor package by the shaping | molding method of the Example by this invention (the 2). 本発明による実施例の成形法による半導体パッケージの製造方法の各段階における製造装置の要部断面図である(その3)。It is principal part sectional drawing of the manufacturing apparatus in each step of the manufacturing method of the semiconductor package by the shaping | molding method of the Example by this invention (the 3). 本発明による実施例の成形法による半導体パッケージの製造方法の各段階における製造装置の要部断面図である(その4)。It is principal part sectional drawing of the manufacturing apparatus in each step of the manufacturing method of the semiconductor package by the shaping | molding method of the Example by this invention (the 4). 本発明による実施例の成形法による半導体パッケージの製造方法の各段階における製造装置の要部断面図である(その5)。It is principal part sectional drawing of the manufacturing apparatus in each step of the manufacturing method of the semiconductor package by the shaping | molding method of the Example by this invention (the 5). 本発明による実施例の成形法による半導体パッケージの製造方法の各段階における製造装置の要部断面図である(その6)。It is principal part sectional drawing of the manufacturing apparatus in each step of the manufacturing method of the semiconductor package by the shaping | molding method of the Example by this invention (the 6). 本発明による実施例の成形法による半導体パッケージの製造方法のフローチャートである。It is a flowchart of the manufacturing method of the semiconductor package by the shaping | molding method of the Example by this invention. 図1乃至図3の下金型2が上昇して型締めされた時の製造装置の全体図である。FIG. 4 is an overall view of the manufacturing apparatus when the lower mold 2 of FIGS. 1 to 3 is raised and clamped. 本発明の製造方法にて成形した半導体パッケージの断面図である。It is sectional drawing of the semiconductor package shape | molded with the manufacturing method of this invention. 樹脂封止層が薄い半導体パッケージを製造した実験結果である。It is an experimental result which manufactured the semiconductor package with a thin resin sealing layer. 半導体パッケージの種類の数と金型の数との関係(a)、可動キャビティの圧力及び速度の変化に対する不具合の発生を調べた実験結果(b)。The relationship between the number of types of semiconductor packages and the number of dies (a), and the experimental results (b) of examining the occurrence of defects with respect to changes in the pressure and speed of the movable cavity.

符号の説明Explanation of symbols

1 成型型
2 下金型
3 上金型
4 サブストレート
5 半導体素子
6 半導体パッケージ
7 キャビティ凹部
7a 底面
8 側壁
9 可動キャビティ
10 押圧軸用ブロック
11 接続ワイヤ
12 配線基板
13 エアーベント
14 ポット
15 プランジャー
16 樹脂フィルム
17 真空用通路
18 樹脂
18a 溶融した樹脂
19 樹脂封止層
1 Mold 2 Lower mold 3 Upper mold 4 Substrate 5 Semiconductor element 6 Semiconductor package
7 Cavity recessed part 7a Bottom face 8 Side wall 9 Movable cavity 10 Press shaft block 11 Connection wire 12 Wiring board
13 Air vent 14 Pot 15 Plunger 16 Resin film 17 Vacuum passage 18 Resin 18a Melted resin 19 Resin sealing layer

Claims (6)

リードフレームまたはサブストレートに半導体素子及び接続ワイヤが配設された配線基板を対向する2つの金型のパーティング面に狭持し、前記配線基板を樹脂封止する半導体パッケージの製造方法において、
前記2つの金型のうち少なくとも上金型には、該金型のキャビティ凹部底面が上下方向に移動可能となるように可動キャビティを設け、
該半導体パッケージを成形する前に予め樹脂封止層の厚さを決定し、
該配線基板と該キャビティ凹部底面との間隔が前記樹脂封止層の厚さよりも広くなるような位置に該可動キャビティを配置した後、
該樹脂を前記2つの金型のキャビティ内に注入し、該樹脂が硬化する前に、該可動キャビティを該配線基板に接近する方向に移動させて前記樹脂封止層の厚さの位置にして該半導体パッケージを成形することを特徴とする半導体パッケージの製造方法。
In a manufacturing method of a semiconductor package in which a wiring board in which a semiconductor element and connection wires are arranged on a lead frame or a substrate is sandwiched between two opposing parting surfaces of molds, and the wiring board is sealed with a resin.
At least the upper mold of the two molds is provided with a movable cavity so that the cavity concave bottom surface of the mold can be moved in the vertical direction,
Before forming the semiconductor package, determine the thickness of the resin sealing layer in advance,
After disposing the movable cavity at a position where the distance between the wiring board and the bottom of the cavity recess is wider than the thickness of the resin sealing layer,
The resin is injected into the cavities of the two molds, and before the resin is cured, the movable cavity is moved in a direction approaching the wiring board to be positioned at the thickness of the resin sealing layer. A method of manufacturing a semiconductor package, comprising molding the semiconductor package.
請求項1にかかる半導体パッケージの製造方法において、前記可動キャビティを所定の加圧力により所定の速度で移動させる
ことを特徴とする半導体パッケージの製造方法。
2. The method of manufacturing a semiconductor package according to claim 1, wherein the movable cavity is moved at a predetermined speed by a predetermined pressure.
請求項1又は請求項2にかかる半導体パッケージの製造方法において、前記可動キャビティを有する金型のキャビティ凹部の表面上に樹脂フィルムを配設したことを特徴とする半導体パッケージの製造方法。 3. The method of manufacturing a semiconductor package according to claim 1, wherein a resin film is disposed on a surface of a cavity recess of a mold having the movable cavity. リードフレームまたはサブストレートに半導体素子及び接続ワイヤが配設された配線基板を対向する2つの金型のパーティング面に狭持し、前記配線基板を樹脂封止する半導体パッケージの製造装置において、
前記2つの金型のうち少なくとも上金型には、該金型のキャビティ凹部底面が上下方向に移動可能となるように可動キャビティを設け、
予め決定された樹脂封止層の厚さに応じて可動キャビティの位置を変更することのできる機構を備え、
該配線基板と該キャビティ凹部底面との隙間が前記樹脂封止層の厚さより広くなるような位置に該可動キャビティを配置した後、
該樹脂を前記2つの金型のキャビティ内に注入し、該樹脂が硬化する前に、該可動キャビティを該配線基板に接近する方向に移動させて前記樹脂封止層の厚さの位置にして該半導体パッケージを成形することを特徴とする半導体パッケージの製造装置。
In a semiconductor package manufacturing apparatus in which a wiring board in which a semiconductor element and a connection wire are arranged on a lead frame or a substrate is sandwiched between two facing parting surfaces of molds, and the wiring board is resin-sealed.
At least the upper mold of the two molds is provided with a movable cavity so that the cavity concave bottom surface of the mold can be moved in the vertical direction,
With a mechanism that can change the position of the movable cavity according to the thickness of the resin sealing layer determined in advance,
After disposing the movable cavity at a position where the gap between the wiring substrate and the bottom of the cavity recess is wider than the thickness of the resin sealing layer,
The resin is injected into the cavities of the two molds, and before the resin is cured, the movable cavity is moved in a direction approaching the wiring board to be positioned at the thickness of the resin sealing layer. A semiconductor package manufacturing apparatus for forming the semiconductor package.
請求項4にかかる半導体パッケージの製造装置において、前記可動キャビティを所定の加圧力により所定の速度で移動させることを特徴とする半導体パッケージの製造装置。 5. The semiconductor package manufacturing apparatus according to claim 4, wherein the movable cavity is moved at a predetermined speed by a predetermined pressure. 請求項4又は請求項5にかかる半導体パッケージの製造装置において、前記可動キャビティを有する金型のキャビティ凹部の表面上に樹脂フィルムを配設したことを特徴とする半導体パッケージの製造装置。 6. The semiconductor package manufacturing apparatus according to claim 4, wherein a resin film is disposed on a surface of a cavity concave portion of the mold having the movable cavity.
JP2007117966A 2007-04-27 2007-04-27 Semiconductor package manufacturing method and manufacturing apparatus Active JP5065747B2 (en)

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