TW201234452A - Apparatus for plasma treatment and method for plasma treatment - Google Patents
Apparatus for plasma treatment and method for plasma treatment Download PDFInfo
- Publication number
- TW201234452A TW201234452A TW100141798A TW100141798A TW201234452A TW 201234452 A TW201234452 A TW 201234452A TW 100141798 A TW100141798 A TW 100141798A TW 100141798 A TW100141798 A TW 100141798A TW 201234452 A TW201234452 A TW 201234452A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- plasma
- processing
- generating unit
- inlet
- Prior art date
Links
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- 238000009832 plasma treatment Methods 0.000 title abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000007789 gas Substances 0.000 claims description 147
- 238000012545 processing Methods 0.000 claims description 72
- 238000010494 dissociation reaction Methods 0.000 claims description 10
- 230000005593 dissociations Effects 0.000 claims description 10
- 230000007246 mechanism Effects 0.000 claims description 8
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 7
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- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims description 2
- 238000004220 aggregation Methods 0.000 claims 1
- 238000009297 electrocoagulation Methods 0.000 claims 1
- 230000005284 excitation Effects 0.000 claims 1
- 210000003126 m-cell Anatomy 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 9
- 210000002381 plasma Anatomy 0.000 description 74
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 16
- 238000011282 treatment Methods 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
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- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
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- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
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- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US45815310P | 2010-11-17 | 2010-11-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201234452A true TW201234452A (en) | 2012-08-16 |
Family
ID=46083727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100141798A TW201234452A (en) | 2010-11-17 | 2011-11-16 | Apparatus for plasma treatment and method for plasma treatment |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9277637B2 (enExample) |
| JP (1) | JP5931063B2 (enExample) |
| KR (1) | KR101910678B1 (enExample) |
| CN (1) | CN103229280A (enExample) |
| TW (1) | TW201234452A (enExample) |
| WO (1) | WO2012066779A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI647755B (zh) * | 2013-12-26 | 2019-01-11 | 日商東京威力科創股份有限公司 | Etching method, memory medium and etching device |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9301383B2 (en) | 2012-03-30 | 2016-03-29 | Tokyo Electron Limited | Low electron temperature, edge-density enhanced, surface wave plasma (SWP) processing method and apparatus |
| JP5934030B2 (ja) * | 2012-06-13 | 2016-06-15 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ生成装置、アンテナ構造体、及びプラズマ生成方法 |
| JP5700032B2 (ja) * | 2012-12-26 | 2015-04-15 | 東京エレクトロン株式会社 | プラズマドーピング装置、およびプラズマドーピング方法 |
| JP2014160557A (ja) * | 2013-02-19 | 2014-09-04 | Tokyo Electron Ltd | プラズマ処理装置 |
| WO2014165669A2 (en) | 2013-04-04 | 2014-10-09 | Tokyo Electron Limited | Pulsed gas plasma doping method and apparatus |
| JP2015130325A (ja) * | 2013-12-03 | 2015-07-16 | 東京エレクトロン株式会社 | 誘電体窓、アンテナ、及びプラズマ処理装置 |
| US9530621B2 (en) | 2014-05-28 | 2016-12-27 | Tokyo Electron Limited | Integrated induction coil and microwave antenna as an all-planar source |
| KR20160021958A (ko) * | 2014-08-18 | 2016-02-29 | 삼성전자주식회사 | 플라즈마 처리 장치 및 기판 처리 방법 |
| US10354841B2 (en) * | 2015-04-07 | 2019-07-16 | Tokyo Electron Limited | Plasma generation and control using a DC ring |
| TWI690972B (zh) * | 2015-05-12 | 2020-04-11 | 日商東京威力科創股份有限公司 | 電漿處理裝置及電漿處理方法 |
| US20170133202A1 (en) * | 2015-11-09 | 2017-05-11 | Lam Research Corporation | Computer addressable plasma density modification for etch and deposition processes |
| JP6785171B2 (ja) * | 2017-03-08 | 2020-11-18 | 株式会社日本製鋼所 | 成膜方法および電子装置の製造方法並びにプラズマ原子層成長装置 |
| JP6925202B2 (ja) * | 2017-08-30 | 2021-08-25 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| CN111146063B (zh) * | 2018-11-02 | 2022-04-08 | 江苏鲁汶仪器有限公司 | 一种等离子体反应腔进气系统 |
| WO2020166009A1 (ja) * | 2019-02-14 | 2020-08-20 | 株式会社日立国際電気 | 高周波電源装置 |
| KR102872895B1 (ko) * | 2020-10-30 | 2025-10-17 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| WO2025197982A1 (ja) * | 2024-03-19 | 2025-09-25 | 国立研究開発法人産業技術総合研究所 | マイクロ波プラズマ処理装置、プラズマ発生方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5134965A (en) * | 1989-06-16 | 1992-08-04 | Hitachi, Ltd. | Processing apparatus and method for plasma processing |
| JP3053105B2 (ja) * | 1989-06-30 | 2000-06-19 | 株式会社日立製作所 | プラズマｃｖｄ装置及びその方法 |
| JPH04346226A (ja) * | 1991-05-23 | 1992-12-02 | Hitachi Ltd | 表面処理装置 |
| DE69318480T2 (de) * | 1992-06-23 | 1998-09-17 | Nippon Telegraph & Telephone | Plasmabearbeitungsgerät |
| JPH09115880A (ja) * | 1995-10-16 | 1997-05-02 | Hitachi Ltd | ドライエッチング装置 |
| US6217704B1 (en) * | 1998-09-22 | 2001-04-17 | Canon Kabushiki Kaisha | Plasma processing apparatus |
| US6450117B1 (en) * | 2000-08-07 | 2002-09-17 | Applied Materials, Inc. | Directing a flow of gas in a substrate processing chamber |
| JP2003142460A (ja) * | 2001-11-05 | 2003-05-16 | Shibaura Mechatronics Corp | プラズマ処理装置 |
| JP5011631B2 (ja) * | 2004-06-01 | 2012-08-29 | 富士ゼロックス株式会社 | 半導体製造装置および半導体製造システム |
| US20060024451A1 (en) * | 2004-07-30 | 2006-02-02 | Applied Materials Inc. | Enhanced magnetic shielding for plasma-based semiconductor processing tool |
| US20060225654A1 (en) * | 2005-03-29 | 2006-10-12 | Fink Steven T | Disposable plasma reactor materials and methods |
| WO2009107718A1 (ja) | 2008-02-27 | 2009-09-03 | 東京エレクトロン株式会社 | プラズマエッチング処理装置およびプラズマエッチング処理方法 |
| JP2009302324A (ja) | 2008-06-13 | 2009-12-24 | Tokyo Electron Ltd | ガスリング、半導体基板処理装置および半導体基板処理方法 |
| WO2010058642A1 (ja) | 2008-11-18 | 2010-05-27 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
-
2011
- 2011-11-16 WO PCT/JP2011/006391 patent/WO2012066779A1/en not_active Ceased
- 2011-11-16 US US13/885,708 patent/US9277637B2/en active Active
- 2011-11-16 TW TW100141798A patent/TW201234452A/zh unknown
- 2011-11-16 JP JP2013522022A patent/JP5931063B2/ja active Active
- 2011-11-16 CN CN2011800550472A patent/CN103229280A/zh active Pending
- 2011-11-16 KR KR1020137012435A patent/KR101910678B1/ko active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI647755B (zh) * | 2013-12-26 | 2019-01-11 | 日商東京威力科創股份有限公司 | Etching method, memory medium and etching device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101910678B1 (ko) | 2018-10-22 |
| US9277637B2 (en) | 2016-03-01 |
| JP5931063B2 (ja) | 2016-06-08 |
| JP2014501027A (ja) | 2014-01-16 |
| WO2012066779A1 (en) | 2012-05-24 |
| CN103229280A (zh) | 2013-07-31 |
| US20130302992A1 (en) | 2013-11-14 |
| KR20130129937A (ko) | 2013-11-29 |
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