CN103229280A - 等离子体处理用设备和等离子体处理用方法 - Google Patents

等离子体处理用设备和等离子体处理用方法 Download PDF

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Publication number
CN103229280A
CN103229280A CN2011800550472A CN201180055047A CN103229280A CN 103229280 A CN103229280 A CN 103229280A CN 2011800550472 A CN2011800550472 A CN 2011800550472A CN 201180055047 A CN201180055047 A CN 201180055047A CN 103229280 A CN103229280 A CN 103229280A
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CN
China
Prior art keywords
gas
plasma
generating unit
inlet
plasma generating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800550472A
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English (en)
Chinese (zh)
Inventor
野泽俊久
田才忠
佐佐木胜
三原直辉
松本直树
茂山和基
吉川润
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN103229280A publication Critical patent/CN103229280A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN2011800550472A 2010-11-17 2011-11-16 等离子体处理用设备和等离子体处理用方法 Pending CN103229280A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US45815310P 2010-11-17 2010-11-17
US61/458,153 2010-11-17
PCT/JP2011/006391 WO2012066779A1 (en) 2010-11-17 2011-11-16 Apparatus for plasma treatment and method for plasma treatment

Publications (1)

Publication Number Publication Date
CN103229280A true CN103229280A (zh) 2013-07-31

Family

ID=46083727

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800550472A Pending CN103229280A (zh) 2010-11-17 2011-11-16 等离子体处理用设备和等离子体处理用方法

Country Status (6)

Country Link
US (1) US9277637B2 (enExample)
JP (1) JP5931063B2 (enExample)
KR (1) KR101910678B1 (enExample)
CN (1) CN103229280A (enExample)
TW (1) TW201234452A (enExample)
WO (1) WO2012066779A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107535043A (zh) * 2015-05-12 2018-01-02 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
CN109427575A (zh) * 2017-08-30 2019-03-05 东京毅力科创株式会社 蚀刻方法和蚀刻装置
CN111146063A (zh) * 2018-11-02 2020-05-12 江苏鲁汶仪器有限公司 一种等离子体反应腔进气系统

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9301383B2 (en) 2012-03-30 2016-03-29 Tokyo Electron Limited Low electron temperature, edge-density enhanced, surface wave plasma (SWP) processing method and apparatus
JP5934030B2 (ja) * 2012-06-13 2016-06-15 東京エレクトロン株式会社 プラズマ処理装置、プラズマ生成装置、アンテナ構造体、及びプラズマ生成方法
JP5700032B2 (ja) * 2012-12-26 2015-04-15 東京エレクトロン株式会社 プラズマドーピング装置、およびプラズマドーピング方法
JP2014160557A (ja) * 2013-02-19 2014-09-04 Tokyo Electron Ltd プラズマ処理装置
WO2014165669A2 (en) 2013-04-04 2014-10-09 Tokyo Electron Limited Pulsed gas plasma doping method and apparatus
JP2015130325A (ja) * 2013-12-03 2015-07-16 東京エレクトロン株式会社 誘電体窓、アンテナ、及びプラズマ処理装置
JP6405958B2 (ja) * 2013-12-26 2018-10-17 東京エレクトロン株式会社 エッチング方法、記憶媒体及びエッチング装置
US9530621B2 (en) 2014-05-28 2016-12-27 Tokyo Electron Limited Integrated induction coil and microwave antenna as an all-planar source
KR20160021958A (ko) * 2014-08-18 2016-02-29 삼성전자주식회사 플라즈마 처리 장치 및 기판 처리 방법
US10354841B2 (en) * 2015-04-07 2019-07-16 Tokyo Electron Limited Plasma generation and control using a DC ring
US20170133202A1 (en) * 2015-11-09 2017-05-11 Lam Research Corporation Computer addressable plasma density modification for etch and deposition processes
JP6785171B2 (ja) * 2017-03-08 2020-11-18 株式会社日本製鋼所 成膜方法および電子装置の製造方法並びにプラズマ原子層成長装置
WO2020166009A1 (ja) * 2019-02-14 2020-08-20 株式会社日立国際電気 高周波電源装置
KR102872895B1 (ko) * 2020-10-30 2025-10-17 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
WO2025197982A1 (ja) * 2024-03-19 2025-09-25 国立研究開発法人産業技術総合研究所 マイクロ波プラズマ処理装置、プラズマ発生方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
US5389154A (en) * 1992-06-23 1995-02-14 Nippon Telegraph And Telephone Plasma processing apparatus
JPH09115880A (ja) * 1995-10-16 1997-05-02 Hitachi Ltd ドライエッチング装置
JP2003142460A (ja) * 2001-11-05 2003-05-16 Shibaura Mechatronics Corp プラズマ処理装置
TW200949976A (en) * 2008-02-27 2009-12-01 Tokyo Electron Ltd Plasma etching processing apparatus and plasma etching processing method
CN101604624A (zh) * 2008-06-13 2009-12-16 东京毅力科创株式会社 气环、半导体基板处理装置及半导体基板处理方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3053105B2 (ja) * 1989-06-30 2000-06-19 株式会社日立製作所 プラズマｃｖｄ装置及びその方法
JPH04346226A (ja) * 1991-05-23 1992-12-02 Hitachi Ltd 表面処理装置
US6217704B1 (en) * 1998-09-22 2001-04-17 Canon Kabushiki Kaisha Plasma processing apparatus
US6450117B1 (en) * 2000-08-07 2002-09-17 Applied Materials, Inc. Directing a flow of gas in a substrate processing chamber
JP5011631B2 (ja) * 2004-06-01 2012-08-29 富士ゼロックス株式会社 半導体製造装置および半導体製造システム
US20060024451A1 (en) * 2004-07-30 2006-02-02 Applied Materials Inc. Enhanced magnetic shielding for plasma-based semiconductor processing tool
US20060225654A1 (en) * 2005-03-29 2006-10-12 Fink Steven T Disposable plasma reactor materials and methods
WO2010058642A1 (ja) 2008-11-18 2010-05-27 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
US5389154A (en) * 1992-06-23 1995-02-14 Nippon Telegraph And Telephone Plasma processing apparatus
JPH09115880A (ja) * 1995-10-16 1997-05-02 Hitachi Ltd ドライエッチング装置
JP2003142460A (ja) * 2001-11-05 2003-05-16 Shibaura Mechatronics Corp プラズマ処理装置
TW200949976A (en) * 2008-02-27 2009-12-01 Tokyo Electron Ltd Plasma etching processing apparatus and plasma etching processing method
CN101604624A (zh) * 2008-06-13 2009-12-16 东京毅力科创株式会社 气环、半导体基板处理装置及半导体基板处理方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107535043A (zh) * 2015-05-12 2018-01-02 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
CN109427575A (zh) * 2017-08-30 2019-03-05 东京毅力科创株式会社 蚀刻方法和蚀刻装置
CN109427575B (zh) * 2017-08-30 2023-02-24 东京毅力科创株式会社 蚀刻方法和蚀刻装置
CN111146063A (zh) * 2018-11-02 2020-05-12 江苏鲁汶仪器有限公司 一种等离子体反应腔进气系统

Also Published As

Publication number Publication date
TW201234452A (en) 2012-08-16
KR101910678B1 (ko) 2018-10-22
US9277637B2 (en) 2016-03-01
JP5931063B2 (ja) 2016-06-08
JP2014501027A (ja) 2014-01-16
WO2012066779A1 (en) 2012-05-24
US20130302992A1 (en) 2013-11-14
KR20130129937A (ko) 2013-11-29

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Application publication date: 20130731