TW201224123A - Polymer etchant and method of using same - Google Patents

Polymer etchant and method of using same Download PDF

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Publication number
TW201224123A
TW201224123A TW100140000A TW100140000A TW201224123A TW 201224123 A TW201224123 A TW 201224123A TW 100140000 A TW100140000 A TW 100140000A TW 100140000 A TW100140000 A TW 100140000A TW 201224123 A TW201224123 A TW 201224123A
Authority
TW
Taiwan
Prior art keywords
weight
glycine
metal salt
composition
aqueous solution
Prior art date
Application number
TW100140000A
Other languages
English (en)
Chinese (zh)
Inventor
Ravi Palaniswamy
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of TW201224123A publication Critical patent/TW201224123A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12—Chemical modification
    • C08J7/14—Chemical modification with acids, their salts or anhydrides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/002—Etching of the substrate by chemical or physical means by liquid chemical etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
    • H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
    • H05K2203/0793—Aqueous alkaline solution, e.g. for cleaning or etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW100140000A 2010-11-03 2011-11-02 Polymer etchant and method of using same TW201224123A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US40979110P 2010-11-03 2010-11-03

Publications (1)

Publication Number Publication Date
TW201224123A true TW201224123A (en) 2012-06-16

Family

ID=46024998

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100140000A TW201224123A (en) 2010-11-03 2011-11-02 Polymer etchant and method of using same

Country Status (6)

Country Link
US (1) US9909063B2 (enExample)
JP (1) JP2014503607A (enExample)
KR (1) KR20130132828A (enExample)
CN (1) CN103189470B (enExample)
TW (1) TW201224123A (enExample)
WO (1) WO2012061010A2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012061183A2 (en) 2010-11-03 2012-05-10 3M Innovative Properties Company Flexible led device for thermal management and method of making
US9179543B2 (en) 2010-11-03 2015-11-03 3M Innovative Properties Company Flexible LED device with wire bond free die
WO2012091972A1 (en) 2010-12-29 2012-07-05 3M Innovative Properties Company Led color combiner
CN103283048B (zh) 2010-12-29 2017-04-12 3M创新有限公司 远程荧光粉led的构造
KR101931395B1 (ko) 2011-02-18 2018-12-20 쓰리엠 이노베이티브 프로퍼티즈 컴파니 가요성 발광 반도체 디바이스
US9236547B2 (en) 2011-08-17 2016-01-12 3M Innovative Properties Company Two part flexible light emitting semiconductor device
KR20140097404A (ko) 2011-11-23 2014-08-06 쓰리엠 이노베이티브 프로퍼티즈 컴파니 3차원 구조를 갖는 가요성 발광 반도체 디바이스
JP2015523722A (ja) 2012-06-01 2015-08-13 スリーエム イノベイティブ プロパティズ カンパニー 遠隔蛍光体ｌｅｄと直接放射ｌｅｄの組合せを使用するハイブリッド電球
KR20150054937A (ko) 2012-09-13 2015-05-20 쓰리엠 이노베이티브 프로퍼티즈 컴파니 넓은 색상 범위를 갖는 효율적인 조명 시스템
US9754869B2 (en) 2013-01-16 2017-09-05 3M Innovative Properties Company Light emitting semiconductor device and substrate therefore
US10692843B2 (en) 2013-12-04 2020-06-23 3M Innovative Properties Company Flexible light emitting semiconductor device with large area conduit
JP2017524542A (ja) 2014-05-28 2017-08-31 スリーエム イノベイティブ プロパティズ カンパニー 可撓性基板上のｍｅｍｓデバイス
WO2016153644A1 (en) 2015-03-20 2016-09-29 3M Innovative Properties Company Multilayer substrate for a light emitting semi-conductor device package
KR101874194B1 (ko) * 2016-11-09 2018-07-03 경희대학교 산학협력단 고속 롤투롤 공정을 이용한 유연소자의 제조 방법
WO2018178817A2 (en) 2017-03-31 2018-10-04 3M Innovative Properties Company Optical system

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3526504A (en) 1966-07-07 1970-09-01 Du Pont Photocrosslinkable elements and processes
US3448098A (en) 1966-09-27 1969-06-03 Merck & Co Inc Production of guanylic acid
US3469982A (en) 1968-09-11 1969-09-30 Jack Richard Celeste Process for making photoresists
US3867153A (en) 1972-09-11 1975-02-18 Du Pont Photohardenable element
US4340482A (en) * 1978-02-21 1982-07-20 Millipore Corporation Process for grafting amino acid molecules onto preformed polymer surfaces and products prepared thereby
DE3708214A1 (de) 1987-03-12 1988-09-22 Schering Ag Verfahren zur haftfesten metallisierung von kunststoffen
FR2630550A1 (fr) 1988-04-22 1989-10-27 Radiotechnique Compelec Procede de montage d'elements optiques sur un support et circuit optique ainsi obtenu
US4975312A (en) 1988-06-20 1990-12-04 Foster-Miller, Inc. Multiaxially oriented thermotropic polymer substrate for printed wire board
JPH0415233A (ja) 1990-05-09 1992-01-20 Sumitomo Metal Mining Co Ltd ポリイミドフィルムのエッチング方法
US5289630A (en) 1991-07-22 1994-03-01 Macdermid, Incorporated Process for fabricating multilayer printed circuits
JPH05202206A (ja) * 1991-10-03 1993-08-10 Mitsubishi Shindoh Co Ltd ポリイミド樹脂のエッチング液およびエッチング方法
JP3186834B2 (ja) 1992-04-28 2001-07-11 住友金属鉱山株式会社 ポリイミド樹脂溶解用エッチング液およびそれを使用したスルーホールのエッチング加工方法
JP3273825B2 (ja) 1993-04-14 2002-04-15 三井化学株式会社 ポリイミド樹脂のエッチング方法
JPH06302586A (ja) 1993-04-14 1994-10-28 Mitsui Toatsu Chem Inc ポリイミドエッチング液及び廃液処理方法
JP3535602B2 (ja) 1995-03-23 2004-06-07 松下電器産業株式会社 面実装型ｌｅｄ
US6218022B1 (en) 1996-09-20 2001-04-17 Toray Engineering Co., Ltd. Resin etching solution and process for etching polyimide resins
JP3251515B2 (ja) * 1996-09-20 2002-01-28 東レエンジニアリング株式会社 樹脂エッチング液及びエッチング方法
JP2001288286A (ja) 2000-02-01 2001-10-16 Toray Ind Inc エッチング方法
JP2001310959A (ja) 2000-02-23 2001-11-06 Toray Ind Inc 樹脂膜のウエットエッチング用エッチング液及びそれを用いて成るエッチング方法
JP2002082451A (ja) 2000-07-06 2002-03-22 Toray Ind Inc 多段階エッチング方法
US6923919B2 (en) 2000-07-18 2005-08-02 3M Innovative Properties Company Liquid crystal polymers for flexible circuits
US6403211B1 (en) 2000-07-18 2002-06-11 3M Innovative Properties Company Liquid crystal polymer for flexible circuits
JP2002180044A (ja) 2000-12-07 2002-06-26 Toray Eng Co Ltd 熱可塑性ポリイミド樹脂用エッチング液
EP1389496A1 (en) 2001-05-22 2004-02-18 Mitsubishi Chemical Corporation Method for cleaning surface of substrate
JP4326887B2 (ja) 2003-09-08 2009-09-09 新日鐵化学株式会社 配線基板用積層体
JP2005206903A (ja) * 2004-01-23 2005-08-04 Kanto Chem Co Inc エッチング液組成物
US20050186404A1 (en) * 2004-02-23 2005-08-25 Guoping Mao Etched polycarbonate films
US7323421B2 (en) * 2004-06-16 2008-01-29 Memc Electronic Materials, Inc. Silicon wafer etching process and composition
JP4339284B2 (ja) 2004-06-17 2009-10-07 三菱製紙株式会社 樹脂エッチング液、樹脂エッチング方法、樹脂剥離方法、およびフレキシブルプリント配線板の製造方法
EP1701218A3 (en) * 2005-03-11 2008-10-15 Rohm and Haas Electronic Materials LLC Polymer remover
JP2006319074A (ja) 2005-05-12 2006-11-24 Mitsui Chemicals Inc Ｌｅｄ実装用基板およびその製造方法
KR20080042798A (ko) 2005-06-27 2008-05-15 라미나 라이팅, 인크. 발광 다이오드 패키지 및 제작방법
JP2007027278A (ja) 2005-07-13 2007-02-01 Shinko Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
TW200709471A (en) 2005-08-29 2007-03-01 Shane Harrah Bendable high flux LED array
US20070120089A1 (en) 2005-11-28 2007-05-31 3M Innovative Properties Company Polymer etchant and method of using same
KR101347486B1 (ko) 2006-01-31 2014-01-02 쓰리엠 이노베이티브 프로퍼티즈 컴파니 유연성 포일 구조를 구비한 ｌｅｄ 조명 조립체
WO2008039730A1 (en) * 2006-09-25 2008-04-03 Advanced Technology Materials, Inc. Compositions and methods for the removal of photoresist for a wafer rework application
US8049112B2 (en) 2007-04-13 2011-11-01 3M Innovative Properties Company Flexible circuit with cover layer
FR2934916B1 (fr) 2008-08-06 2013-09-20 Laurain Support de diodes electroluminescentes et procede de realisation d'un circuit de diodes electroluminescentes avec un tel support.
JP5379441B2 (ja) 2008-10-09 2013-12-25 関東化学株式会社 基板処理用アルカリ性水溶液組成物
JP2010251376A (ja) 2009-04-10 2010-11-04 Sumitomo Electric Printed Circuit Inc 配線体，その製造方法および電子機器
JP2012064841A (ja) 2010-09-17 2012-03-29 Citizen Holdings Co Ltd 半導体発光装置
US9179543B2 (en) 2010-11-03 2015-11-03 3M Innovative Properties Company Flexible LED device with wire bond free die
WO2012061183A2 (en) 2010-11-03 2012-05-10 3M Innovative Properties Company Flexible led device for thermal management and method of making
KR20130143067A (ko) 2010-11-03 2013-12-30 쓰리엠 이노베이티브 프로퍼티즈 컴파니 가요성 led 디바이스 및 제조 방법
WO2012112666A2 (en) 2011-02-18 2012-08-23 3M Innovate Properties Company Light emitting semiconductor device having multi-level substrate
KR101931395B1 (ko) 2011-02-18 2018-12-20 쓰리엠 이노베이티브 프로퍼티즈 컴파니 가요성 발광 반도체 디바이스
WO2012112310A1 (en) 2011-02-18 2012-08-23 3M Innovative Properties Company Flexible light emitting semiconductor device having thin dielectric substrate
US9236547B2 (en) 2011-08-17 2016-01-12 3M Innovative Properties Company Two part flexible light emitting semiconductor device

Also Published As

Publication number Publication date
JP2014503607A (ja) 2014-02-13
WO2012061010A2 (en) 2012-05-10
CN103189470B (zh) 2015-05-20
KR20130132828A (ko) 2013-12-05
WO2012061010A3 (en) 2012-07-19
CN103189470A (zh) 2013-07-03
US20130207031A1 (en) 2013-08-15
US9909063B2 (en) 2018-03-06

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