TW201221614A - Die-bonding film, dicing/die-bonding film, method for fabricating die-bonding film and semiconductor apparatus with die-bonding film - Google Patents
Die-bonding film, dicing/die-bonding film, method for fabricating die-bonding film and semiconductor apparatus with die-bonding film Download PDFInfo
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- TW201221614A TW201221614A TW100141146A TW100141146A TW201221614A TW 201221614 A TW201221614 A TW 201221614A TW 100141146 A TW100141146 A TW 100141146A TW 100141146 A TW100141146 A TW 100141146A TW 201221614 A TW201221614 A TW 201221614A
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
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- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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- Adhesives Or Adhesive Processes (AREA)
Description
201221614 六、發明說明: 【發明所屬之技術領域】 本發明是關於一種黏晶膜、切晶黏晶膜、黏晶膜的製 造方法以及具有該黏晶膜的半導體裝置。 【先前技術】 近來為因應半導體裝置微細化、高功能化的要求,在 半導體晶片(元件)主面整區上配置的電源線的佈線寬度或 信號線間隔逐漸變窄。因此,阻抗增加或異構節點的信號 線間產生信號干涉,在半導體晶片操作速度、工作電壓容 限、耐’靜電擊穿力等方面,成為阻礙性能充分發揮的原因。 以往,為了解決上述問題,提出了積層半導體晶片的 封裝結構(例如,參考專利文獻丨和專利文獻2)。 另-方面’伴隨近年來的電子部件的多樣化,從 =晶片釋放的電磁波(雜訊)的_也變得多樣,在 的封裝結構那樣積層半導體晶片的情況下,從—個 晶片釋放的電磁波有可能會對另 相鄰的ϋ件、封裝等產生不鄉響。+導U、基板、 體的由電絕緣層和鐵氧體層構成的積層 片,藉由鐵氧體層的磁損耗=件電=電磁波, 另外,專利文獻4揭示在晶粒座盘半導體曰° 第二磁遮罩材料的轉㈣導體晶片社面上配置 (卓材·+導體裝置。糊讀 4 201221614 體裝置對外部磁場的对受性有所提高。 [先前技術文獻] [專利文獻] 專利文獻1 專利文獻2 專利文獻3 專利文獻4 曰本特開昭55-111151號公報 曰本特開2002-261233號公報 曰本專利第4133637號公報 曰本特開2010-153760 【發明内容】 [發明要解決的課題] 號公報 專利文獻3的半導體元件接著用電磁波遮蔽 造過程是將電絕緣層浸入含Fe2+的鍍反應液中,’-其製 等以形成鐵氧體層,然後設置黏著層。但是,這伃水解 過程煩瑣,並且有生產率不足的問題。 Q,的製造 另外,專利文獻4的半導體裝置製造過程是, ^晶片背面黏貼有接著性的第—膜材,再藉第—膜劑觀 2-磁遮罩材料,錢在第—磁遮罩材料背面黏貼有接 者^的第二蹄。但是’此雜造過程與先前的半導體裝 置製造相比,追加了㈣第—磁料㈣的步驟和黏貼第' 1膜材的步驟,故製造步驟數增多’有生產率不足的問題。 L解決課題的技術手段] 本發明人等為了解決所前述先前技術的問題,對黏晶 f、切晶黏晶膜’以及黏晶臈的製造方法進行了研究。結 ^現如採用以下結構,即可在不使生產率下降的情況 下製造具有電频料層的半導财置,從岐成本發明。 201221614 δ羊吕之’本發明的黏晶膜包括接著劑層,以及包括金 屬箔的電磁波遮罩層。 本發明的黏晶獏具有包括金屬箔的電磁波遮罩層,故 能阻斷電磁波,而減少從-個半導體元件釋放的電^波對 另一半導體元件、基板、相鄰的器件、封裝等產生的影響。 另外,本發明的黏晶膜只要在接著劑層上黏貼包括金屬3箔 的電磁波遮罩層即可製造,故生產率佳。又,由於本發明 的黏晶膜有電磁波遮罩層,故製造半導體裝置時無需追加 形成電磁波遮罩層的步驟。亦即,如使用本發明的黏晶膜 作晶粒接合,則可在不追加電磁波遮罩層形成步驟的情況 下製造具電磁波遮罩層的半導體裝置,亦即可在不增加製 造步驟的情況下製造具電磁波遮罩層的半導體裝置:' 另外本發明的另·一種黏晶膜包括接著劑層,以及以 蒸鍍形成的電磁波遮罩層。 本發明另一種黏晶膜因具有以蒸鍍形成的電磁波遮罩 層,而能遮蔽電磁波。因此,可減少從一個半導體元件釋 ,的電磁波對另—半導體元件、基板、相鄰的器件、封裝 等,生的影響。另外,本發明另一種黏晶膜只要以蒸鍍在 接著劑層上开>成電磁波遮罩層即可,故生產率佳。又,由 於本發明另一種黏晶膜有電磁波遮罩層,故製造半導體裝 置時無需追加形成電磁波遮罩層的步驟。亦即,如使用本 毛月另種點晶膜作晶粒接合,則可在不追加電磁波遮罩 層形成步驟的情況下製造具電磁波遮罩層的半導體裝置, 亦即可在不增加製造步驟的情況下製造具電磁波遮罩層的 6 201221614 半導體裝置。另外,本發明另一種黏晶膜具有以蒸鍍形 的電磁波遮罩層,故在刀片切割時不易產生切削碎^厂而 可防止半導體晶片的污染,亦可減少刀片的損傷。 另外,本發明的切晶黏晶膜是為了解決前述問題,將 黏晶膜積層在切晶膜上,此切晶膜具有在基材上積層有黏 著劑層的結構,且黏晶膜積層在此切晶膜的黏著劑^上二 另外,本發明的黏晶膜的製造方法包括:形成^著劑 層的步驟,以及在所述接著劑層上黏貼由包括金屬箔 磁波遮罩層的步驟。 依前述構成製造的黏晶膜具有包括金屬箱的電磁波遮 罩層,故能遮蔽電磁波。因此,可減少從一個半導體元 釋放的電磁波對I半導體元件、基板 '相鄰的器件、封 裝等產生的影響n依前述構成,^要在接著劑層上 黏貼包括金;|_€錢鮮層即可製造具電磁波遮^ 的黏晶膜,故生產率佳。另外,由於 ς 遮罩廣,故製造半導體裝置時無需追加= ,遮罩層的辦。亦即’如使用該黏晶膜作晶粒接合, 处U追加電磁波遮罩層形成步驟的情況下製造具電場 ,亦即可在柯加製造步驟的情況 下裟以八有電礤波遮罩層的半導體裝置。 接著ΐ丨發㈣另—種黏晶朗製造方法包括:形成 波遮“:以及以蒸鍍在所述接著劑層上形成電越 依則迷構成製造的點晶膜因具有蒸錢形成的電磁波遮 201221614 罩層,故能遮蔽電磁波。因此,可減少從一個半導體元件 釋放的電磁波對另一半導體元件、基板、相鄰的器件、封 裝等產生的影響。又,前述構成是以蒸鍍在接著劑層上形 成電磁波遮罩層,故生產率佳。另外,依前述構成製造的 黏晶膜有電磁波遮罩層,故製造半導體裝置時無需追加形 成電磁波遮罩層的步驟。亦即,如使用該黏晶獏作晶粒^ 合,則可在不追加電磁波遮罩層形成步驟的情況下製1且 電磁波遮罩層的半導體裝置,亦即可在不增加製造 情況下製造具電磁波遮罩層的爭導體裝置。又,依亍’的 成製造的黏晶犋有蒸鍍形成的電磁波遮罩層,故刀片構 時不易產生切肖彳碎屑,而可防土抖體晶 二割 減少刀片損傷。 ’亦可 前述問題,而 另外’本發明的半導體裝置是為了解決 具有前述黏晶膜。 【實施方式】 (黏晶膜) — 凡閃本發明一實施方式的黏晶膜。圖i 一貫施方式她晶膜的剖面示意圖,圖2是另一 ^ =晶膜的剖面示意圖。如圖工所示 : f_上積層電磁波_ 31的則m 積層接菩Z 可具有在電财遮罩層31 =層接者劑層32的構成。又,本發明的 二以 層和電磁波遮膜具有插 為具有除即可,不限於黏晶wg、41’例知 有除接者_和電财料科叫他層的㈣ 8 201221614 -τν/ν^ ριΐ 電磁波遮罩展 31包括金屬㈣',^,括金屬_或蒸鍍膜。電磁波遮軍層 磁波遮罩層31能=1、41即具有包括金屬猪的電 導體元件釋M㈣f。因此,可減少從-個半 器件、封裝等產生^ 士另—半導體元件、基板、相鄰的 著劑層30上勒姑包^金θ。^外,黏晶膜40、41只要在接 生產率佳。另外,者、:自的電磁波遮罩層即可製造,故 鍍膜)時,黏晶螟4〇層31是以蒸鍍形成的層(蒸 故能遮蔽電磁波。因'、療鍍形成的電磁波遮罩層31, 電磁波對另一半導 丛可減少從—個半導體元件釋放的 的影響。另外’製造二膜:鄰器件、封裝等產生 前述金屬落或二=’二生產率佳。 鉀、物、絶、舞、銘、鋇、夢、鈹例舉選自由鐘、納、 鎵、姻、釔、鑭.、鈽、镨、二二、鋅、鎘、汞、鋁、 鉛、钍、鐵、鈷、氮、釩、鈮、鈕、鉻::太:、錫、铪、 銶、銅、銀、金、釕、鍺、鈀 、鎢、鈾、錳、 的至少-種以上金屬元素、所述金屬二翻構成的組群中 金屬元素的合金等。所述導電声中,=的氧化物、所达 10Χ101〜10xlG7s/m範圍;,佳的是導電率在 5xl07S/m範圍内者,特佳的是 /是導電率在5X102〆 範圍内者。包括金屬箱或蒸鍍膜的電磁10x102〜1χΐ〇7, 由反射損耗使電磁波麵。膜的㈣波遮罩㈣可以藉 電磁波遮罩層31的厚度無特別限制,可㈣·謝一 201221614f -rvuJ JpAl 的範圍内選擇,〇. 005〜90 //m較佳,〇. 〇l〜80 //m更佳。 對黏晶膜40、41而言’透過其的電磁波的衰減量在 50 MHz〜20 GHz範圍頻域的至少一部分中較佳為3dB以 上。所述頻域更佳為80 MHz〜19 GHz,再佳100 MHz〜18 GHz。另外’所述衰減量更佳為4dB以上,又更佳5dB以 上。當透過黏晶膜40、41的電磁波的衰減量在50 MHz〜20 GHz這般較高頻域的至少一部分中為3dB以上時,可有效 遮蔽電磁波,故可減少從一個半導體元件釋放的電磁波對 另一半導體元件、基板、相鄰的器件、封裝等產生的影響。 接著劑層30與電磁波遮罩層31的180度剝離強度以 及接著劑層32與電磁波遮罩層31的180度剝離強度較佳 為0. 5N/l〇mm以上,更佳〇· 8N/l〇mm以上,又更佳1. 〇 N/l〇mm以上。使該180度剝離強度為0.5N/10imn以上, 即不易引起層間剝離,而可提高良率。 前述180度剝離強度可以下述方式測量。首先,用膠 帶(曰東電工公司製BT-315)對接著劑層加襯,並切成ι〇χ 100 mm。然後’用膠帶(日東電工公司製BT-315)對電磁 波遮罩層加襯,並切成l〇xl〇〇mm。然後,用層壓機(MCK 製MRK-600)在50°C、0. 5 MPa、1〇 mm/秒條件下將切出 的接著劑層與電磁波遮罩層黏貼,之後在常溫(25°c)環境 下放置20分鐘得測試片。然後,以拉伸測試機(島津製作 所製AGS-J)測量接著劑層與電磁波遮罩層的18〇度剝離 力。 構成接著劑層30、32的接著劑組成物,可例舉將熱塑 201221614 性樹脂和熱固性樹脂組合使用而得的組成物。接著劑層3〇 與接著劑層32的組成可以相同也可以不同。 ^述熱固性樹脂可例舉:祕樹脂、氨基樹脂、不飽 ㈣、桃細旨、聚氨§旨細旨、聚魏職脂或熱 I性魏亞胺職^ 伽可單獨使用或兩種以上組 口使^。特佳的是腐蝕半導體元件的離子性雜質等的含量 少的^氧,。另外’環氧樹脂的固化劑較佳是祕樹脂。 :述裱氧樹脂只要是通常作為接著劑組成物使用者即 可,沒有特別限制,可使用例如:雙酚人型、雙酚f型、 又,S型、漠化雙酚A型、氫化雙酚A型、雙酚从型、 =笨型、萘型、,_、麵祕清漆型、”祕酸清漆 型、三(經苯基)曱院型、四(經苯基)乙燒型等雙 ,脂或多官能環氧樹脂,或者乙内醯腺型、異氰脲酸^縮 田旨,水甘油胺型等環氧樹脂。這些環氧樹脂可 早獨使用或_以上組合使用。環氧樹脂中特 祕清漆型魏概、聯苯型環氧樹脂、三(鮮基 型環氧樹脂或四(鮮基)乙烧型環氧樹脂,因為這= 樹月旨與作為固化劑的祕樹脂的反應性佳,且耐熱^等 ^ ° * 常4:液脂可將常溫下為固態的環氧樹脂與 吊咖下為减*氧義兩種組合使用。在常溫 ,環氧樹脂中加人常溫下為液態的環氧樹脂,可改= 薄膜時的脆弱性,而提高作業性。 口 / 另外’則述紛駿樹脂用作前述環氧樹脂的固化劑,可 11 201221614 例舉:苯酚酚醛清漆樹脂、笨酚芳烷基樹脂、曱酚酚醛清 漆樹脂、三級丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆 樹脂等酚醛清漆型酚樹脂、ky、,一小型酚醛樹脂、聚對羥 基苯乙烯等聚羥基苯乙烯等。這些酚醛樹脂可單獨使用或 兩種以上组合使用,其中特佳的是苯酚酚醛清漆樹脂、苯 盼芳烧基樹脂,因其可提高半導體裝置的連接可靠性。 關於前述環氧樹脂與酚醛樹脂的調配比例,例如,以 相對於前述環氧樹脂成分中的環氧基丨當量,酚醛樹脂中 的羥基為0.5〜2.0當量的方式進行調配是適當的。後者更 口適的疋0. 8〜1. 2當量。這是因為:兩者的調配比例在所 述範圍以外時,不能進行充分的固化反應,從而環氧樹脂 固化物的特性容易劣化。 醇酯或聚對笨二 亞胺樹脂、志士
前述熱塑性樹脂可例舉:天然橡膠、丁基橡膠、異戊 膠、氣丁橡膠、乙烯-乙酸乙烯醋共聚物、乙烯-丙 物、乙烯_丙晞㈣共聚物、聚丁二稀樹脂、聚碳 二二:曰二熱塑性聚醯亞胺樹脂、尼龍6或尼龍66等聚醯 it·桃::苯氧基樹脂、丙烯酸類樹脂、聚對苯二曱酸乙二 :酸丁二醇酯等飽和聚酯樹脂、聚醯胺醯 氟樹脂等。這些熱塑性樹脂可單獨使用或 12 201221614 酸類聚合物)等。前述烷基可例舉:甲基、乙基、丙基、異 丙基、正丁基、三級丁基、異丁基、戊基、異戊基、己基 庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬 基、癸基、異癸基、十一烷基、月桂基、十三烷基、^四 烧基、硬脂基、十八烷基或者十二烷基等。 形成前述聚合物的其他單體無特別限制,可例舉丙稀 酸、甲基丙烯酸、.丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、 馬來酸、富馬酸或巴豆酸等含羧基單體;馬來酸酐或衣康 酸針等酸酐單體;(甲基)丙烯酸-2-羥基乙酯、(甲基)丙稀 酸-2-羥基丙酯、(甲基)丙烯酸—4-羥基丁酯、(甲基)丙稀 酸-6-羥基己酯、(甲基)丙烯酸一8_羥基辛酯、(曱基)丙烯 酸-10-羥基癸酯、(甲基)丙烯酸-12-羥基月桂酯或丙烯酸 (4-經甲基環己基)曱酯等含羥基單體;苯乙浠磺酸、婦内 基磺酸、2-(曱基)丙烯醯胺基-2-曱基丙磺酸、(甲基)丙烯 醯胺基丙磺酸、(甲基)丙烯酸磺丙酯或(曱基)丙烯醯氧基 萘磺酸等含績酸基單體;或者丙烯醯罐酸_2_羥基乙酯等含 磷酸基單體。 前述熱固性樹脂的調配比例只要可使接著劑層3 〇、3 2 在規定條件下加熱時發揮熱固化型功能即可,無特別限 制’較佳在5〜60 wt%範圍内,更佳在1〇〜50 wt%範圍内。 另外,如上所述,構成接著劑層30、32的接著劑組成 物可將聚醯亞胺樹脂作為熱固性聚醯亞胺樹脂或熱塑性聚 醯亞胺樹脂而與其他樹脂共同使用,亦可單獨使用。聚醯 亞胺樹脂一般是將作為其前驅物的聚醯胺酸脫水縮合(醯 13 2012216Η 亞胺化)而得的耐熱性樹脂。聚醯胺酸可以使二胺成分與酸 針成分以實質上等莫耳比在適當的有機溶劑中反應而得。 上述二胺可例舉:脂族二胺或芳香族二胺。脂族二胺 可例舉:乙二胺、己二胺、18_二氨基辛烷、1,1〇_ 二氨基癸烷、1,12-二氨基十二烷、4, 9-二氧雜-1,12-二氨 基十二烧、丨,3-雙(3-氨基丙基)-1,1,3, 3-四甲基二矽氧烷 («,价雙氨丙基四曱基二矽氧烷)等。脂族二胺的分子量通 常為50〜loooooo ’較佳為ι〇〇〜3〇〇〇〇。 上述芳香族二胺可例舉:4, 4,_二氨基二苯醚、3, 4,-二氨基二笨醚、3, 3’ -二氨基二苯醚、間苯二胺、對苯二 胺、4,4,_二氨基二苯基丙烷、3,3,_二氨基二苯基曱烷、 4, 4 -二氨基二苯硫醚、3, 3’ _二氨基二苯硫醚、4, 4,-二氨基二苯砜、3, 3’ -二氨基二苯砜、丨,4-雙(4-氨基苯氧 笨、1,3-雙(4-氨基苯氧基)苯、丨,3_雙(3_氨基苯氧基) 苯、1,3-雙(4-氨基苯氧基)_2, 2-二曱基丙烷、4, 4,_二氨 基二苯曱酮等。 上述酸酐可使用各種酸酐,例如四羧酸二酐。四羧酸 二酐可例舉:3, 3,,4, 4’ -聯苯四甲酸二酐、2, 2,,3, 3,- 聯苯四甲酸二酐、3, 3’,4,4,_二苯曱酮四曱酸二酐、 2,2’,3,3’ -二苯甲酮四曱酸二酐、4,4,_氧雙(鄰苯二甲 酸)二酐、2,2-雙(2, 3-二羧基苯基)六氟丙烷二酐、2,2_ 雙(3,4-二羧基苯基)六氟丙烷二酐(61?1)入)、雙(2,3_二羧 基苯基)曱烷二酐、雙(3, 4-二羧基苯基)曱烷二酐、雙(2, 3-二羧基苯基)砜二酐、雙(3, 4-二羧基苯基)砜二酐、均苯四 201221614 酸二酐 、乙一醇雙偏苯三酸二針等。 用或者兩独上組合仙。4 k麵質可以單獨使 使上述二胺與酸酐反應的溶劑無特別限制, 可例舉 N N-二甲基乙酿胺、N_甲基_2吻各_ =、環⑽等。為了調節騎料或樹脂的溶雜甲^ 苯、二甲苯等雜性溶劑適當混合使用。二 亞胺㈣方法可例舉加熱岐胺化法、 :^弗=法、化學輕胺化料。較佳者為加熱醯亞胺化 2加熱溫度較佳酿以上。糾,在加熱醯亞胺化法 中為防止樹脂氧化降解,較佳在氮氣環境下或真空中等惰 性環境下精處理,找全除絲财殘留的揮發成分。 使上述四羧酸二酐與二胺反應時,特別是在使用含有 丁二烯丙烯腈共聚物骨架的二胺的情況下,較佳在loot 以上的溫度下進行反應,以防止凝膠化。 接著劑層30、32中可視需要使用熱固化催化劑作為構 成材料,其配合比例相對於有機成分100重量份較佳為 〇.〇1〜5重量份,更佳〇.〇5〜3重量份,特佳〇· pi重量份。 該配合比例設為〇.〇1重量份以上即可良好地顯現熱固化 後的接著力,而設為5重量份以下即可抑制保存性的下降。 前述熱固化催化劑無特別限制,可例舉咪唑類化合 物、三苯基膦類化合物、胺類化合物、三笨基硼烷類化合 物、三鹵代硼烷類化合物等,可單用或兩種以上組合使用。 前述味峻類化合物可例舉:2-甲基咪嗤(商品名: 2MZ)、2-十一烷基咪唑(商品名:cilZ)、2-十七烷基咪 15 201221614 nvu-j jpif 唑(商品名:C17Z)、1,2-二曱基咪唑(商品名:! 2DMZ)、 2-乙基-4-甲基咪唑(商品名:2E4MZ)、2_苯基咪唑(商品 名:2PZ)、2-苯基-4-甲基咪唑(商品名:2p4MZ;)、卜苄 基一2—甲基咪唑(商品名:1B2MZ)、卜苄基—2_苯基咪唑(商 品名:1B2PZ)、卜氰基乙基_2_甲基㈣(商品名: 2MZ-CN)、1-氰基乙基_2_十一烷基咪唑(商品名: C11Z-CN)、1-氰基乙基—2-苯基味唾鑌偏苯三酸鹽(商品 名:2PZCNS-PW)、2,4-二氨基-6-[2’ -甲基_絲(1,)] 乙基-均三嗪(商品名:2MZ_A)、2 4氨 -炫綱基σ 乙基-均三嘻(商品二6二:4十_ 二氨基-6-[2’ _乙基-4,-曱基咪唑基(1,)]乙基一均三嗪 (商品名:2丑4]^12-八)、2,4-二氨基-6-[2’-曱基咪唑基 α’)]乙基-均三嗪異氰脲酸加成物(商品名:2MA_〇K)、 2-苯基-4, 5-二羥基曱基咪唑(商品名:2ρΗΖ_pw)、2苯 基-4-甲基-5-羥曱基咪唑(商品名:2P4MHZ_pw)等(均為 四國化成公司製)。 刚述二本基膦類化合物無特別限制,可例舉:三苯基 ,、三丁基膦、三(對甲基笨基)膦、三(壬基苯基)膦、二 苯基甲苯基膦等三有機基膦、溴化四苯基鱗(商品名: TPP-PB)、甲基三苯基鱗(商品名:τρρ_ΜΒ)、氣化甲基三 苯基鳞(商品名:TPP-MC)、甲氧基曱基三笨基鱗 名. TPP-MOC)、氯化苄基三苯基鱗(商品名:τρρ-zc)等 (均為北興化學公司製造)。另外,前述三苯基膦類化合物 較佳為對環氧樹脂實質上不溶的化合物。對環氧樹脂不溶 201221614 時,即可抑制熱固化過度進行。有三苯基膦結構 樹脂實質上不溶的熱固化催化劑可例舉:甲美二— 品名:TPP_MB)等。另外,前述「不溶」是指含本三基 類化合物的熱固化催化劑在含環氧樹脂的溶射不产^ 具體而言’是指在溫度1 〇〜4〇。(:範圍内不溶解i 〇 wt〇/: 前述三苯基硼烷類化合物無特別限制,可例舉三 基苯基)膦等。另外,三苯基職類化合物還包含& 基膦結構的化合物’此種化合物沒有特·制,^ ^ . 四笨基鱗四苯基硼酸鹽(商品名:τρρ_κ)、 牛. 三硼酸鹽(商品名:τρρ_ΜΚ)、苄基二 四對 mr^a ^ 下丞—本基鱗四笨基硼酸 名™ZK)、三苯基膦三苯基爛烷(商品 寻(均為北興化學公司製造)。 前述胺類化合物没有特别限制,可例舉:一乙 (Stella Chemifa ^
Tesque公司製造)等。 哪^述三齒代職類化合物沒有特別限制,可例舉三氯 f使接著劑層30、32預先進料雜度的交聯的情況 處在製作時可以添加與聚合物的分子鏈末端的官能基等 的:ΐί官能化合物作為交聯劑。由此,可以提高高溫下 的接者特性,改善耐熱性。 一 ^述交·可使關知者,特別是甲苯二異氛酸醋、 基曱烷二異氰酸酯、對苯二異氰酸酯、丨,5—萘二異氰 H多7L醇與二異氰酸g旨的加成物等多異級§旨化合物 17 201221614 更佳 父聯劑的添加量相斟於1 常較佳設為0各7重量份。^物⑽重量份,通 故不佳;低於〇. 〇5重量份 重置份時接著力下降, 要可與境樣的多異氛酸 :如有 其他多官能化合物。 物冋含有娘氧樹脂等 另外,接著劑層3〇、32中可依% $ 填料的調配可賦予導電 了/;其二途適當,填料。 等。前述填料可例舉無機填料和^機^料y周即^性模量 提:熱電導性、調節_度、賦予機觸==性、 氧化紹、氫氧化#無特別限制’可例舉··氫 氧化鈣、氧化鎂、氧化H、石夕酸鎮、 結晶二氧化石夕、非氧 呂、呂晶鬚、氮化蝴、 氮化鋁、^ ^熱電導的觀點,較佳者為氧化鋁、 從上述各特性平衡良好的觀點,較』;二 非晶二氧化石夕。又,A _道㈣,為,曰一氧化石夕或 亦可佶用道,、予導電性、提南熱電導性等目的, ^電性物質(導電填料)為無機填料。導電填料可 例舉銀、鋁、今、腩你,营而人 守电填利·可 f # ; ft ^ ' 二物氧化料金屬氧化物、非晶炭黑、石 =填料的平均粒财設為請㈣脚設為〇. 〇〇5 可改善對被黏物的_性及接著性;設為1〇卿 二”可充分發揮為賦予上述各特性而添加的填料的 效果,且可麵賴性。另外,養的平均粒 18 201221614 -TV7UJ Jplf 由光度式粒徑分佈計(H〇RlB A製L A_ 9 i 〇 )求出的值。 又’接著劑層30、32中除前述填料外,可視需要適卷 調配其他添加劑,如阻_、魏偶義或離子捕獲田 前述阻燃射崎三氧化二録、五氧化n化環氧樹 上組合使用。前述魏偶聯劑可例 g 1 氧衣己基)乙基三曱氧基魏、r-環氧丙氧基 ί '環氧丙氧基丙基甲基二乙氧基石夕燒 二種以上組合使用。前述離子捕獲劑可例 牛水/月石類、氫乳化纽等,其可單用或兩種以上組合使用。 黏晶膜40、41的厚度(包括電磁波遮罩層和接 ==別限制’例如可從卜200 的範圍内i 擇,較佳5~100仰1,更佳1〇〜80 //rn。 接著劑層3。、32的厚度沒有特別限制,可 度在上述範圍内的方式選擇,例如卜2。。二 較佳5〜10〇em,更佳10〜80^。 勒曰^方式的點晶膜積層在切晶膜上,而可作為切晶 ^日日、 以F說明本發明一實施方式的切晶黏晶膜。 (切晶黏晶膜) ^ aa^ 層有圖2所示的黏晶膜的切_晶膜的-例 曰胳μ不思·圖4是積層有圖2所示的黏晶膜的切晶黏 日日膜的另一例的剖面示意圖。 11 s 9 ^成切日日膜U疋在基材1上積層黏著劑 θ 站晶膜41設置在黏著劑層2上。另外,本發 19 201221614 明也可=疋僅在工件黏貼部分形成黏晶膜 圖4所示的切晶黏晶膜12所示„ -------*心厂吓不〇 則述基材1可使用具紫外線透射性者 膜㈣的強度母體。可例舉:低密度聚乙二= ===乙Γ高密度聚乙稀、超低密度聚乙烯ί :基鱗等聚咖乙.乙酸乙稀醋共聚物、 樹脂、乙烯-(甲基)_酸共聚物、乙 合物 (無規、交替)共聚物、乙婦_丁稀共聚物、乙^婦= 物、聚氨醋、聚對苯二甲酸乙二醇醋、聚蔡 ,等聚酯;聚碳_旨 亞胺、聚_ g ^手 ,醚醯亞胺、聚_、全芳族聚_、聚苯硫:= 玻璃、玻璃布、含氟樹脂、聚氯乙婦、聚偏 氯1外纖ί素類樹脂、聚石夕氧烧樹脂、金屬⑻、紙^ 物。前述塑膠薄膜可以不拉伸而使用,也可 處:fi用。利用藉拉伸處理等而具有熱收縮 層2與曰胺:割後使基,熱收縮’即可減小黏著劑 半導體晶片(半導體元件)。 7以令易地回收 為了提高與鄰接層的密合性、保持性等, 施f用的表面處理,例如鉻酸處理、臭氧ΐ露、 户理、刹田商壓電擊暴露、電離放射線處理等化學或物理 處理利用底塗劑(例如後述的黏著物質)的塗布處理。基 20 201221614 材1可適當選擇使用同種或不 要使用將數種材料共混後的材料。類的材料,也可以視需 基材1的厚度沒有特別限制 5〜200 pm左右。 ]適*決定,一般為 形成黏著劑層2用的黏著劑 =„、橡膠類黏著解— 的超純水或醇等有機溶劑的清潔的電子部件 以丙!聚合物為基礎聚合物的_酸=劑^ 酸類聚合物可例舉:使用(甲基)丙烯酸烧基 酉曰(例如’甲S曰、乙酯、丙醋、異丙醋、丁醋、異丁 級丁酯、三級丁酯、戍酯、里g ^ „ 9= 戊曰己醋、庚醋、辛酉旨、 乙基己S0、異辛酯、壬g旨、癸g|、異癸§旨、十—燒醋、 十二烧δ旨、十三賴、十四燒g旨、十六_、十八燒酉:、 二十烧酯粒絲碳數1,、翻是碳數4〜18的直鏈或 支鏈烷基酯等)和(甲基)丙烯酸環烷酯(例如,環戊酯、環 己酯等)的_種或兩種以上作為單舰分的⑽酸類聚合 物等。另外,(甲基)丙烯酸酯表示丙烯酸酯和/或甲基丙^ 酸酯’本發明的(甲基)全部表示相同的含義。 土 為改善凝聚力、耐熱性等,前述丙烯酸類聚合物可視 需要含有對應於能夠同前述(甲基)丙烯酸烷基酯或環烷酯 共1之其他举體成为的皁元。這樣的單體成分可例舉.丙 稀酸、f基丙烯酸、(甲基)丙烯酸羧乙酯、(甲基)丙烯酸 羧戊酯、衣康酸、馬來酸、富馬酸、巴豆酸等含鲮基單體; 201221614 馬來酸酐、衣康酸酐等酸酐單體;(曱基)丙烯酸-2-羥基乙 g旨、(曱基)丙烯酸-2-經基丙S旨、(曱基)丙烯酸-4-經基丁 酯、(甲基)丙烯酸-6-羥基己酯、(曱基)丙烯酸_8-羥基辛 酯、(甲基)丙烯酸-10-羥基癸酯、(曱基)丙烯酸-12-羥基 月桂酯、(曱基)丙烯酸(4-羥甲基環己基)曱酯等含羥基單 體;苯乙烯磺酸、烯丙基磺酸、2-(曱基)丙烯醯胺-2-曱基 丙磺酸、(曱基)丙烯醯胺丙磺酸、(曱基)丙烯酸磺丙酯、(曱 基)丙烯醯氧萘磺酸等含磺酸基單體;丙烯醯磷酸-2-羥基 乙酯等含磷酸基單體;丙烯醯胺、丙烯腈等。這些可共聚 單體成分可使用一種或兩種以上。這些可共聚單體的使用 量較佳為全部單體成分的40 wt%以下。 另外’為進行交聯,所述丙烯酸類聚合物亦可視需要 含有多官能單體等作為共聚用單體成分。此等多官能單體 可例舉:己二醇二(曱基)丙烯酸酯、(聚)乙二醇二(曱基) 丙烯酸酯、(聚)丙二醇二(曱基)丙烯酸酯、新戊二醇二(甲 基)丙烯酸酯、季戊四醇二(曱基)丙烯酸酯、三羥甲基丙烷 三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊 四醇六(曱基)丙烯酸酯、環氧(曱基)丙烯酸酯、聚酯(曱基) 丙烯酸酯、氨基曱酸酯(曱基)丙烯酸酯等。這些多官能單 體亦可使用一種或兩種以上。多官能單體的使用量從黏著 特性等觀點考慮,較佳為全部單體成分的3〇重量%以下。 前述丙烯酸類聚合物可以將單一單體或兩種以上單體 的混合物聚合來得到。聚合可以藉溶液聚合、乳液聚合、 本體聚合、料聚合等任意方式進行。從防止對潔淨被點 22 201221614 物的污染等觀點,低分子量物質的含量少較佳。w = 慮,丙烯酸類聚合物的數量平均分子量較佳為3〇坆該點考 更佳為40萬〜300萬左右。 萬以上’ 另外,為提高作為基礎聚合物的丙烯酸類聚人 數量平均分子量,前述黏著劑中亦可適當採用的 劑。外部交聯方法的具體手段可例舉··添加多異父聯 合物、環氧化合物、氮丙魏合物、三聚氛胺類 所謂的交聯劑並使其反應的方法。使用外部 ^等 使用量根據與應該交聯的基礎聚合物的平衡以 f,其 劑的使用用途而適當決定。一般而言對 ^點著 合物⑽重量份,較佳為5重量份以下,礎聚 ίί用ί 1卜2據需要,在黏著劑中除前述成分以外 使用周,各種增_、抗老化轉添加劑。 以 黏著劑層2可以由輻射線固化型 固化型黏著劑藉由紫外 輪射線 可以容易地降低其黏著力。=線=,大, 分& =著=_射線’即可以設置與其他部 黏著晶膜41’存在下使輻射線固化型 由易形成黏著力顯著下降的部分心 μ 著力下降的前述部分〜上黏貼有黏晶膜 有充分的轉力1形成前述部分洗未照射輻射線的部分具 23 201221614 HV/UJ jpif 如前所述,圖3所示的切晶黏晶膜1〇的黏著劑層2 中,由未固化的輻射線固化型黏著劑形成的前述部分 與黏晶膜41黏合,可以確保切割時的保持力。如此,輻射 線固化型黏著劑可以以良好的接著_剝離平衡支撐用於將 晶片狀工件(半導體⑼等)固著到基板等被黏物上的黏晶 膜41。圖4所示切晶黏晶膜π的黏著劑層2中,前述部 分2b能夠將晶圓環(wafer ring)固定。 ° 前述輕射線固化型黏著劑可以沒有特別限制地使用具 有碳碳雙鍵等輻射線固化性官能基且顯示黏著性的_線 固化型黏著劑’其例如為:在前述丙烯酸類黏著劑、橡膠 類黏著劑等-般壓敏黏著針触輻射線固化性的單體成 分或低聚物成分而得的添加型輻射線固化型黏著劑。 調配的前述輻射線固化性單體成分可例舉:氨基甲酸 醋寡聚物、氨基曱酸酯(甲基)丙烯酸g旨、三經甲基丙烧三 (甲基)丙稀酸醋、四經甲基曱燒四(甲基)丙稀_旨、季戍 四醇二(甲基)丙稀酸醋、季戊四醇四(甲基)丙稀酸醋、二 季戊四醇單祕五(甲基)丙稀咖、二季戊四醇六(甲基) 丙稀酸醋、1,4-丁二醇二(曱基)丙烯酸料。另外,輕射 線固化性低聚物成分可娜氨基旨類、聚喃、聚醋 類、1碳酸Sa類、聚了二烯類等各種寡聚物,其分子量在 100〜3_左右的範_是適#的。輻躲祕性單體成 分或寡聚物絲的調配量可財選麵黏㈣層的麵, 適當地決定能夠降低黏著劑層的黏著力的量。一般而言, 相對於構餘著劑的丙職齡合物#基娜合物100重 24 201221614 i 量份,例如為5〜500重量份,較佳4〇〜15〇重量份左右。 另外,輻射線固化型黏著劑除了前面說明的添加型輻 射線固化型黏著劑以外,還可例舉使用在聚合物側鏈或主 鏈中或者主鏈末端具有碳碳雙_聚合物作為基礎聚合物 的内在型n線固化型黏著劑。内在型輻射線固化型黏著 ,無需含有^者多數不含有作為低分子量成分的寡聚物成 分等’因此寡聚物成分等不會隨時間推移在黏著劑中移 動,:可以形成層結構穩定的黏著劑層,因此是較佳的。 則述具妷奴雙鍵的基礎聚合物可以沒有特別限制地使 用具碳碳缝且具㈣性㈣絲。這樣·礎聚合物較 ,為以丙聚合物作為基本骨架的聚合物。丙稀酸類 聚口物的基本骨架可例舉前文例示過的丙烯酸類聚合物。 在前述__聚合財狀碳碳雙鍵的方法無特別 限制’可鉢種方法’但是將碳碳魏狀聚合物侧鍵的 =在分子設計上較容易,可例舉:預先將具有官能基的 :體與丙棘騎合物絲後,使具有能無官能基反應 的官能基和碳碳雙_化合物在保持碳碳雙鍵的輻射線固 化性的情況下與·L述所得物進賴合或域反應的方法。 14些官能基的組合可例舉:竣基與環氧基、絲與氮 ^定基、經基與異等。在這些官能基組合中,考 f到反應追縱的容,較佳的是羥基與異氰酸喊的組 二雔^ ’如果是義這些官能基雜合而生成前述具碳 ,雙鍵的丙烯酸歸合物的組合,則官能基可以在丙稀酸 類聚合物與前述化合物巾的任意―方上;但在前述的較佳 25 201221614 組合中,較佳是丙烯酸類聚合物有羥基、前述化合物 氰酸酯基的情況。此時,具碳碳雙鍵的異氰酸酯化合〇 例舉:曱基丙烯醯異氰酸酯、2-曱基丙烯醯氧乙基^ 酯、間異丙烯基二曱基苄基異氰酸酯等。另外, 酸類聚合物可以使用將前文例示的含羥基單體或2__其 乙基乙烯基醚、4-羥基丁基乙烯基醚、二乙二1 醇單乙 醚的醚類化合物等共聚而得到的聚合物。 土 所述内在型輕射線固化型黏著劑可單獨使用前述具石山 碳雙鍵的基礎聚合物(尤其丙烯酸類聚合物),亦可在 害特性的範圍内調配前述輻射線固化性單體成分或寡聚物 成分。輻射線固化性寡聚物成分等相對於基礎聚合物'〇〇 重量份通常在30重量份範圍内,較佳〇〜1〇重量份的範圍。 前述輻射線固化型黏著劑是以紫外線等固化時,可含 有光聚合引發劑。光聚合引發劑可例舉· 4 苯基㈣基如伽、祕 甲基-2-祕苯丙酮小減環己基苯基綱等①崎類化合 物;甲氧基苯乙g同、2,2-二甲氧基-2—苯基苯乙酮、2,2_ 二乙氧基苯乙酮、2_甲基—H4_(F硫基)苯基]_2_嗎琳基 丙烧二1,等苯乙_化合物;苯偶姻⑽、苯偶姻異丙 驗、回香油甲細等苯偶姻_化合物,· :等=類化合物;2—蔡韻氯等芳香族俩氯類化合 二:,I卜丙二酮―2·乙氧基幾細等光活⑽ 類化百物;二苯甲酮、苯甲醯苯甲酸、3,3,-二甲基-4-甲氧基二苯以同等二苯甲酮類化合物;嗟偏同、2_^塞噸 26 201221614 I w A i. 酉同、2-曱基噻噸酮、2, 4_二曱基噻噸酮、異丙基噻噸酮、 2’4-二氣噻噸酮、2, 4-二乙基噻噸酮、2, 4-二異丙基噻噸 酮等嗟°頓酮類化合物;樟腦醌;鹵代酮;醯基膦氧化物; 酿基膦酸醋等。光聚合引發劑的調配量相對於構成黏著劑 的丙稀酸類聚合物等基礎聚合物1〇〇重量份,例如為〇. 〇5 〜20重量份左右。 又’輻射線固化型黏著劑可例舉曰本特開昭 60-196956號公報揭示的,含有具2個以上不飽和鍵的加 成聚合性化合物、具環氧基的烷氧基矽烷等光聚合性化合 物,以及羰基化合物、有機硫化合物、過氧化物、胺、鏽 鹽類化合物等光聚合引發劑的,橡膠類黏著劑或丙烯酸類 黏著劑等。 前述輕射線固化型的黏著劑層2中亦可視需要含有照 ,射線而著色的化合物。在黏著劑層2中含有照輻射線而 著色的化合物,即可僅將照輻射線的部分著色。亦即,可 以將與圖3所示的工件黏貼部分3a對應的部分2a著色。 由此,可用肉眼直接判斷黏著劑層2是否被照了輻射線, 而可各易識別工件黏貼部分3a,工件黏貼也容易。另外, 在利用光感測益等檢測半導體元件時,其檢測精確度高, 因而在半導體元件的拾取時不會產生誤操作。 b照輻射線著色的化合物為在照輻射線前無色或淺色、 但是藉照輻射線而有色的化合物。此種化合物的較佳具體 例可例舉隱色染料。隱色染料可較佳使用慣用的三苯基甲 烷類、焚烧(flu_e)類、吩嘆嗪類、金胺(Auramine)類、 27 201221614 M-uojjpif 螺°比喃類隱色染料,可具體例舉:(對曱苯基氨 基)]-7_苯胺基熒烷、3-[N-(對曱苯基)_N_曱基氨基]_7_苯 胺基纽、3-[N-(對曱苯基)_N_乙基氣基]_7_苯胺基癸 烧、3-二乙氨基-6-曱基-7-苯胺基焚烧、結晶紫内g|、 4,4 ,4 -二(二甲氨基)三苯基甲醇、4,4,,4” _三 氨基)三苯基甲烷等。 ’ 較佳與這些隱色染料-起使用的顯色劑可例舉 的酚醛樹脂的預聚物、芳香族羧酸衍生物、活性白土 用另外’欲使色調變化時,可將各種周知的發色劑 此等照輻射線著色的化合物可先溶於有機溶 再包含在輻射線固化型接著劑中,另外,亦 ^寻甲後 式包含在該黏著劑中。該化合物在黏著劑層^ =粉末形 例宜在10 wt%以下,較佳〇. 01〜1〇 wt%,更^ 的使用比 該比例超過10 wt°/。時,照射到黏著劑層2 _ 5wt°/〇。 化合物過度吸收’因此黏著劑層2的前述部分/射線被該 充分,致使黏著力的下降程度不足。另—方^ a的固化不 著色,較佳將該化合物的比例設定為〇. 〇1了充分 以輕射線固化型黏著劑形成點著劑層2的、上 佳對黏著劑層2的一部分進行輻射線照射,使二二Z ’較 分2a的黏著力小於其他部分2b的黏著力。^則述部 在前述黏著劑層2中形成前述部分2a的 在支撐基材1上形成輻射線固化型黏著劑層2後可例 部分2a局部照輻射線使其固化的方法。曰1 ,對前述 W °丨輻射線照射可 28 201221614 =用形成有與jh件減部分3a以外的部分%等對應 案的光罩來進行。另可例舉雜照料_化的方陶 ㈣線固化型«劑層2形成方法可以是,狀在分^ 的輻射線固化型黏著劑層轉印到基材i上。局 2 、’、亦可對設在分隔片上的輻射線固化型黏著劑層2進^。’ 另外’以辕射線固化型黏著劑形成黏著劑層2時 對,撑基材1的至少單面的與工件黏貼部分如對應^ =夕的部分的全部或局部進行遮光,在該基材上形成幸^ 化型黏著_ 2後照射細線,使與工件黏貼部分3 以二的,分固化而形成黏著力下降的前述部分2a。遮/ ^可精由在支撐㈣上印刷或蒸鍍能成為鮮的柯料來 、。用此製造方法即可有效率地製造切晶黏晶膜1〇。 另外’ 麟照射時因氧㈣礙固化時,可利用任音 t從輕射線固化型歸劑層2的表面隔絕氧(錢),^ =例舉.用分隔片輕黏著_ 2的表面,或 %1兄中進行紫外線等輻射線的照射等。 黏著綱2的厚度沒有制聞,㈣止晶4切 :缺陷並同時固定保持接著層等觀點 1 右,較佳2〜30仰,更佳5〜25卿。 _左 切晶黏晶膜 10、12 /11 i 1 » ±Ju >4. 保護膜4卜41較佳以分隔片 俾圖不)刀隔片的功能是在供給實際應用之前作為 將^曰膜4W1’的保護材料。另外,分隔片也可用作 片^膜41、41㊣黏著劑層2轉印時的支撐基材。分隔 向切晶黏晶膜的點晶膜4卜41,上黏貼工件時制離。 29 201221614 分隔片可使用聚對笨二甲酸乙二醇酉旨(p =劑==離劑、長鏈垸基丙輪型二: (黏二=:)後的塑膠薄膜'導 成物溶液中除了 接者別組成物溶液。此接著劑組 填料、各種添加齊=者劑組成物以外,亦可視需要調配 基材=片接著劑組成物溶液塗上 3〇。塗布m姓膜後’在預定條件下乾燥形成接著劑層 塗布箄特別限制,可例舉輥塗、網版塗布、凹版 ί後溫度7叫時間:二 波遮罩層31為金场錢磁麵罩層3:l。電磁 而得的膜層壓接到接著劑::二料l成星金屬箱 3〇上來形成。可將前述材料蒸鑛到接著劑層 法、真空蒸鍍i 可例舉濺鍍法销 另外,i*、由㈣即可得到黏晶膜4〇。 得黏晶臈41。接菩層31上更形成接著劑層32即可 (接著劑組絲^綱32用的材料 下形成塗層來❹i度塗到剝離紙上,並在預定條件 形成黏晶膜ϋΓΤ層轉印到電磁波遮罩層31上即 31上後在預定條^ 材料直接塗到電磁波遮罩層 千下乾燥,亦可形成接著劑層32。 30 201221614 (切晶黏晶膜的製造方法) 法。晶膜Μ為例’說明切晶黏晶膜的製造方 法首先,基材i可利用周知的製膜方法製膜,例如.壓 延製膜法、有機溶劑中的澆注法、密閉體系中的吹脹壓出 法、T _壓出法、共壓出法、乾式積層法等^出 接著在基材1上塗布黏著劑組成物溶 於預定條件下乾燥(視需要加 著 布方法無特別限制,可例兴·=賊黏者劑層2。塗 等。㈣㈣如 輕塗、網版塗布、凹版塗布 專乾祕件例如:溫度8(M5〇t: 隔片上塗布黏著劑組成物形成塗“在: 與刀=一起黏貼到基材 以預先製造的黏晶膜41的接著劑層32盘黏著 :二::的方式將兩者黏貼。此黏貼例如可娜 #溫度沒有特舰制,例如3{μ_較佳, k 。糾,線遷沒有㈣限制,例如〇.卜20 峨01更佳。雜,將接著劑層上的 夕t 得本實施方式的切晶黏曰曰4 .另 罩戶31 ^層上依序直接形成接著劑層30、電磁波遮 劑層32,也可以得到切晶黏晶膜10,其中 接=劑層3〇、電磁波遮罩層3卜接著劑層32 方法 與則述的黏晶膜製造方法同樣即可。 y ' (半導體裝置的製造方法) 本發明的切晶黏晶膜10、12是將在黏晶膜41、41, 31 201221614 HUO^^pif 上任選設置的分隔片適當剝離後,以下述方式使用。以下 參考圖5,以使用切晶黏晶膜1〇的情況為例作說明。圖5 是利用圖3所示切晶黏晶膜中的黏晶膜安裝半導體晶片的 例子的剖面示意圖。 首先,將半導體晶圓4壓接在切晶黏晶膜1〇中的黏晶 膜41的半導體晶片黏貼部分3a上,並使其保持接著而固 定(黏貼步驟)。本步驟利用壓接輥等擠壓工具的擠壓來進 行。安裝時的黏貼溫度沒有特別限制,例如在2〇~8(rc 範圍内較佳。 然後進行半導體晶圓4的切割,藉此將半導體晶圓匕 切割為預定尺寸而小片化,製作半導體晶片5。此:割你 如疋知:照¥規方法,從半導體晶圓4的電路面側進行。 外,本步财例何以制切人勒晶黏晶膜1()的 切割的切#1方式等。所㈣蝴裝置無制_,= 周知者。另外,半導體晶片由㈣黏晶膜1()接著, ^抑制晶片缺損或晶片飛散,並可減少半導體晶圓 損。此時,在構成黏晶膜41的電磁波遮罩層 法形成的蒸鍍綱情況下,在則_時不易產生切^ 屬’而可防止半導體晶片污染,亦可減少刀片的損 然後,為了剝離由切晶黏晶膜10接著固丰縣 片,進行半導體晶片5的拾取。拾取方法盔,導體曰曰 採用周知的各種方法,例如:用針將各個二=’: 切晶黏晶膜10 -側往上推,並以拾取I置拾^ ^從 黏著劑層2為紫外、_化型時,此拾取是在_=劑 32 201221614 "TUUJ jpif 層2照紫外線後進行。由此’黏著劑層2對黏晶膜41點著 力下降,使半導體晶片5容易剝離’而可在不損傷半導體 晶片5的情況下進行拾取。紫外線照射的照射強度、照射 時間等條件沒有特別限制,可視需要適當設定。另外,紫 外線照射時使用的光源可以使用前述的光源。 ' 拾取的半導體晶片5利用黏晶膜41接著到被黏物6 上而固定(晶片接合)。被黏物6可例舉導線架、Tab薄膜、 基板或單獨製作的半導體晶片等。被黏物6例如可以是容 易變形的變形型被黏物,也可以是難以變形的非變形型被 黏物(半導體晶圓等)。 剞述基板可使用周知者。另外,前述導線架可使用鋼 導線架、42合金導線架等金屬導線架或包含玻璃環氧、βτ (雙馬來醯亞胺-三嗪)、聚醯亞胺等的有機基板。但是,本 發明不限於此’也包含絲半導體元件且與之電性連接德 可以使用的電路基板。 接著劑層30、32為熱固型,故以加熱固化將半導體晶 m著111定於鄕物6,使雜㊣度提®。加熱溫度可 ;〜,l〇〇〜175t較佳,跡靴更佳。加熱時間 7卜以上?4小時’ο.1〜3小時較佳㈣ 而得劑層30、32將半導體晶片5接著固定於基板等 而付的,可以供應給回焊製程。 在固化後對半導體晶片的剪切接著力 層30、較佳為〇. 2 MPa以上5 MPa以下。接著劑 的剪切接著力為0.2 MPa以上時,在進行打線 33 201221614 jpit 步驟時步驟中的超音波振動或加熱而在 層30、32與半導體晶# 5或被黏物6的接著面上產生剪切 變形。即’半導體元件很少因打線時的超音波振動而移動, 而可防止打線的成功率下降。 另外,本發明的半導體裝置的製造方法可在不經接著 劑1 30、32 #加熱處理熱固化步驟的情況下進行打線,再 用您封樹脂將半導體晶片5密封,並使該密封樹脂後固 化。此時,接著劑層3〇、32暫時固著時對被黏物6的剪切 接力較佳為〇. 2 MPa以上、更佳0. 2〜10 MPa。接著劑層 3〇、32暫時固著時的剪切接著力至少0. 2 MPa以上時, 即使在不經加熱的情況下進行打線,也很少因該步驟中的 超者波振動或加熱而在接著劑層30、32與半導體晶片5 或被黏物6的接著面上產生剪切變形。亦即,半導體元件 夕因打線時的超音波振動而移動,而可防止打線的 率下降。 所述打線是利用銲線7將被黏物6的端子部(内部導線) 的末端與半導體晶片5上的電極銲墊(未圖示)電性連接的 步驟(參考圖5)。前述銲線7可使用例如:金線、紹線或 鋼線等。打線溫度在別〜25(Tc、較佳別〜22(TC的範圍内, #加熱_為幾秒〜幾分鐘。線連接是在加熱至前述溫度範 圍内的狀態下’組合湘超音波的振動能和施加壓力產生 的壓接能來進行。本步驟可以在不進行接著劑層3〇、32 的熱固化的情況下進行。 别述密封步驟是利用密封樹脂8將半導體晶片5密封 34 201221614 -TUUJ jpit 的步驟(參考圖5)。本步驟是為了保遵搭載在被黏物6上 的半導體晶片5或銲線7而進行的。本步驟是用模具將密 封用的樹脂成型來進行。密封樹脂8例如可使用環氧類樹 脂。樹脂密封時的加熱溫度通常在175°C下進行60〜90秒, 但本發明不限於此,例如亦可在165〜185°C下固化幾分 鐘。由此’在使密封樹脂固化的同時以黏晶膜41將半導體 晶片5與被黏物6固著。即,本發明中,即使不進行後述 的後固化步驟,也可以在本步驟中以黏晶膜41固著,而可 有助於減少製造步驟數及縮短半導體裝置的製造時間。 前述後固化步驟是使前述密封步驟中固化不足的密封 樹脂8完全固化。即使接著劑層3〇、32在密封步驟中未完 全熱固化,在本步驟中也可與密封樹脂8 一起完全熱固 化。本步驟的加熱溫度因密封樹脂的種類而異,例如,在 165〜185t的範圍内,加熱時間為0.5〜8小時左右。利用以 上操作,即可得到在被黏物6與半導體晶片5之間設有黏 晶膜41的半導體裝置。 ’ 上述的半導體裝置製造方法中,黏晶膜41具有電磁波 遮罩層31,因此不含用於形成電磁波遮罩層31的單獨步 驟。亦即,上述半導體裝置製造方法使用黏晶獏41作晶$ 接合,故可在不進行電磁波遮罩層31形成步驟的情況下製 造具有電磁波遮罩層31的半導體裝置,而可在不増加製造 步驟的情況下製造具有電磁波遮罩層31的半導體裂置^ 另如圖6所示,切晶黏晶膜41也可適用於將多個半 體晶片層疊進行三維組裝的情況。圖6是以圖3所示切曰 35 201221614 HUUJjpif 黏晶膜中的黏晶膜三維組裝半導體晶片的例子的剖面示土 圖。在圖6所示的三維組裝的情況下’首先,將切宝彳^與 半導體晶片同尺寸的一個黏晶膜41接合在被勒物6上'後j 用黏晶膜41將半導體晶片5以打線面為上侧的方式進行接 合。然後,避開半導體晶片5的電極銲墊部分點貼另一魏 晶膜41,再將另一半導體晶片15以打線面朝上的方弋接 合到黏晶膜41上。 ; 然後’進行黏晶膜41的熱固化,其後進行打線步驟。 如此即利用銲線7將半導體晶片5和另一半導體晶^ u 中的各個電極銲墊與被黏物6電性連接。 接著,進行利用密封樹脂8將半導體晶片5等密封的 密封步驟,並使密封樹脂固化。另外,密封步驟後可進行 後固化步驟。利用以上操作,即可得到在半導體晶片5^ 另一個半導體晶片15之間設置有黏晶膜41的半導體装置。 在進行半導體晶片的三維組裝的情況下,將半導體晶 片5、15與被黏物6連接的銲線7的數量增多,因此傾: 使打線步驟中消耗的時間增加,從而在高溫下長時間暴 露。但是’利用黏晶膜41 ’即使在高溫下長時間暴露,也 可以抑制熱固化反應的進行。 黏晶膜41與半導體晶圓3 (半導體晶片5 )的⑽ 離強度較佳為G. 5 N/1Gmm以上,更佳丨.Q麵_以上, 又更佳1.5N/lGmm以上。使前述⑽度剝離強度為 0. 5N/H)mm以上,即不易弓丨起層間剝離,而可提高良率。 前述180度剝離強度,可以根據JIS Z0237如下述進 36 201221614 行測定。首先,;师帶(日東電卫株式會社製则⑸對接 著劑層加襯,並切割為lGxl()Gmm。然後,㈣出的接著 劑層黏貼到半導體晶片上。此黏貼是在5(rc的敎板上使 2kg的輥料欠來進行。_,在常溫(2rc)環境下放 置20分鐘而得試驗片。然後,使用拉伸测試機(島津製作 所製AGS-乃測量接著劑層與半導體晶片白勺⑽度剝離力。 上述的實施方式說明了電磁波遮罩層31為一層的情 況’但本發明中電磁波遮罩層;限於—層,也可為兩層以 上。為兩層以上時,其層結構無特別限制。例如,多個電 磁波遮罩層可在不隔著其他層的情況下進行積層,也可在 隔著其他層(例如,接著劑層)的情況下積層。電磁波遮罩 層為兩層以上時,可先藉由一個電磁波遮罩層使電磁波衰 減,再藉由另一個電磁波遮罩層使電磁波更衰減。 [實例] 以下例示詳細說明本發明的較佳實例,但該實例中記 載的材料或配合量等只要沒有特別限定的記載,則本發明 不限於此。另外’下文中「份」是指重量份。 (實例1) 〈接著劑層A的製作〉 使下述(a)~(f)溶解於甲乙酮中,得到濃度為23. 6重 篁%的接著劑組成物溶液。 (a) 以丙烯酸乙酯-曱基丙烯酸曱酯為主成分的丙烯酸酯類 聚合物(根上工業公司製造,Paracron W-197CM) 100份 (b) 環氧樹脂1 (:iER公司製造,Epicoat 1004) 242份 37 201221614 斗 uojpif (c) %<氧樹脂 2 (JER 公司製造,Epicoat 827) 220 份 (d) 酚醛樹脂(三井化學公司製,MilexXLC_4L) 489份 ㈤球狀二氧化石夕(Admatechs公司製,SO_25R) 660份 (f)熱固化催化劑(四國化成公.司製造,C11-Z) 3份 θ將該接著劑組成物溶液塗上由經聚矽氧烷脫模處理的 子50 //m的pet膜構成的脫模處理薄膜(剝離襯墊)之後, 在13ITC下乾燥2分鐘,以製作厚6〇^m的接著劑層A。 <接著劑層B的製作〉 曰使下述(a)〜(d)溶解於甲乙酮中,得到濃度為23. 6重 量%的接著劑組成物溶液。 (a) 丙稀酸酉旨類聚合物(Nagase chemteX公司製造,SG-80H) 100份 (b) 環氧樹脂(DIC公司製造,HP-7200H) 1〇份 (c) 盼酸樹脂(三井化學公司製造,MiiexXLC_4L) 1〇份 ⑷球狀二氧化石夕(Admatechs公司製,SO-25R) 63份 將該接著劑組成物溶液塗上由經聚石夕氧烧脫模處理的 厚50 /mi的PET膜構成的脫模處理薄膜(剝離襯墊)之後, 在130 C下乾燥2分鐘,以製作厚1〇 的接著劑層b。 〈黏晶膜的製作〉 在接著劑層A與接著劑層B之間,在8〇t、黏貼壓 力0. 3 MPa、黏貼速度1〇 mm/秒的條件下黏貼厚度2〇 的鋁箔(東洋鋁公司製造),製作厚度90 的黏=膜。另 外,鋁箔具有電磁波遮罩層的功能。 、 (實例2) 38 201221614 "tUUJ jpif <黏晶膜的製作> 在接著劑層A與接著劑層B之間,在8(rc、黏貼壓 力0. 3 MPa、黏贴速度1〇 mm/秒條件下黏貼厚度祁 的SUS304 (不銹鋼)箔,製作厚度1〇8 的黏晶膜。另 外’ SUS3G4 具有電磁波遮罩層的功能。 (實例3) <黏晶膜的製作> #使用賤鍍裝置(ULVAC公司製SH_55()),以濺锻法在 接著劑層A上形成厚_ nm的Is層。麟條件如下。 (濺鍍條件) 乾材:紹 放電輸出功率:DC_W (輸功轄度3.4W/Cm2) 系統内壓力:0.56 Pa 氬氣流量:40 seem 基板溫度.未加熱 成膜速度.20 nm/分鐘 然後’在紹層上,在贼、黏貼壓力〇 . 3驗、黏貼 速度10職/秒的條件下點貼接著_ B,製作厚度7〇 5 =的,晶膜。另外’麵具有電磁波遮罩層的功能。 (貫例4) 〈黏晶膜的製作〉 錢ί ϋ著綱A與B之間,在8crc.壓力q. 3驗、 =速度件下黏貼厚2Mm的,以製作 另外,鎳箔具有電磁波遮罩層的功能。 39 201221614 (實例5) <黏晶膜的製作> 在接著劑層A與B > 黏貼速度1G贿黏賴力G·3他、 能。 、另外,銅箔具有電磁波遮罩層的功 (實例6) 〈黏晶膜的製作> 伽H在厚38 ^的PET膜上蒸鑛有厚G. 5 ^的銘的 4臈(東麗缚膜加工公司製 也稱為「紹蒸鍍薄膜」)。 名·Μ—111,以下 然後,在接著劑層A與接著劑層B之間,在8〇ΐ、 力〇. 3紙、黏貼速度1〇mm/秒條件下黏貼前述紹 j薄膜’以製作厚⑽.5仰的黏晶膜,其中以接著劑 =面對PET膜、接著㈣B面_驗層的方式進行 -貝。另外,鋁蒸鍍層具有電磁波遮罩層的功能。 (比較例1) 除了未使用銘箱以外,與實例i同樣黏貼接著劑層A 和接著劑層B,製作本比較例的黏晶膜。 曰 (比較例2) <黏晶膜的製作> 準備在厚度38 //m的PET薄膜上形成有厚度3 的 鐵氧體層的薄膜。比較例2中的鐵氧體層為以鍍鐵氧體法 製作的由NiZn鐵氧體構成的膜層。 又 / 201221614 然後,在接著劑層A與接著劑層b之間,在8〇°C、 黏貼壓力0. 3 MPa、黏貼速度1 〇 mm/秒條件下黏貼前述鐵 氧體薄膜,以製作厚111 的黏晶膜,其中以接著劑層A 面對PET膜,接著劑層B面對鐵氧體層的方式進行黏貼。 <電磁波衰減量(dB)的測量> β用磁場探針法進行實例和比較例的黏晶膜的電磁波衰 減量(dB)測量。具體而·I*,先用頻譜分析儀(Advantest製 R3172)向特性阻抗5〇 〇的MSL線路中輸入頻率 13 MHz〜3 GHz的數位汛號,用磁場探針(NEC工程公司製Cp_2S)測 罝線路上1 mm内產生的磁場強度(dB)。然後將實例和比 較例的黏晶膜置於MSL線路上,啦磁場強度(dB)。將 MSL日線路上為無物狀態的測量值與在msl線路上方放置 有黏=膜的L纟測量值作峰,以其差值作為13 MHz〜3 GHZ|a圍内的電磁波衰減量(dB)。測量結果如表1所示。, =作圖於圖7〜14 ’其中圖7〜12分別顯示實例卜6的測量 、、’《果’圖13、14分別顯示比較例1、2的測量結果。 201221614 HUOJjpif 表1 MHz 實例1 實例2 實例3 實例4 實例5 實例6 比較例1 比較例2 13 3.23 5.84 1.31 1.95 3.55 4.86 2.20 2.43 19 2.81 5.28 1.05 2.08 1.90 3.58 -0.59 2.67 31 4.30 2.34 1.27 3.28 2.60 4.02 0.80 0.42 43 3.76 5.15 3.35 2.83 4.06 4.44 0.76 0.78 55 3.35 2.93 3.66 3.10 5.15 5.70 0.30 -0.38 103 6.70 8.73 6.18 6.34 7.41 8.60 -0.10 -0.16 151 9.17 9.21 7.59 9.38 8.59 7.42 -0.63 -1.15 205 10.65 10.20 10.41 11.04 11.49 9.58 -0.20 -0.03 301 14.52 12.64 13.63 13.05 14.40 14.41 -0.12 -0.12 403 16.27 15.79 15.90 15.84 17.30 17.26 0.14 -0.78 505 18.63 16.97 17.53 17.27 17.21 17.74 0.10 -0.29 601 19.24 17.49 16.89 18.03 16.90 18.70 -0.20 -0.31 703 18.09 18.49 16.32 17.11 17.36 18.70 -0.08 0.32 805 18.96 18.78 17.48 17.52 16.95 18.04 -0.23 -0.20 901 19.27 18.26 19.98 16.72 17.55 19.25 -0.11 -0.78 1003 18.72 18.45 17.84 17.76 16.68 18.46 0.02 -0.78 1105 19.78 17.84 19.11 17.60 17.65 19.49 -0.04 -0.51 1201 18.48 20.44 20.87 19.01 18.04 19.74 0.04 -0.01 1303 20.97 19.64 21.86 20.33 18.08 20.76 -0.03 0.13 1405 15.23 17.00 19.61 17.01 16.41 16.67 -0.13 -0.40 1501 13.06 16.29 21.36 16.86 14.80 14.77 -0.14 -0.59 1602 12.78 13.03 18.85 15.74 14.20 11.07 -0.36 -0.95 1704 16.20 15.43 21.47 15.82 14.21 13.93 -0.18 -0.72 1800 18.59 16.17 22.02 15.43 12.50 17.79 -0.19 -0.61 1902 24.13 20.35 23.21 14.87 12.30 23.71 -0.20 -0.11 2004 20.58 19.32 23.84 13.33 11.07 20.73 -0.23 0.25 2100 18.24 18.25 20.84 7.30 8.70 17.11 -0.12 0.21 2202 19.10 19.00 17.55 9.03 9.83 17.68 -0.09 -0.35 2298 17.79 18.75 17.51 12.02 11.93 17.03 -0.20 -0.60 2400 20.97 21.48 20.95 15.72 15.28 20.88 -0.22 -1.26 2502 23.70 24.37 23.27 19.63 18.93 22.37 -0.03 -0.88 2598 24.31 23.57 22.34 20.38 18.87 24.40 -0.19 -0.38 2700 21.21 21.82 20.27 20.36 19.27 23.27 0.00 0.78 2802 19.26 20.30 20.01 18.09 18.68 18.70 -0.05 0.71 2904 19.13 17.08 17.30 18.08 17.06 18.11 -002 -0.27 3000 15.73 20.89 19.15 18.25 16.73 21.30 0.58 -0.51 【圖式簡單說明】 圖1是本發明一個實施方式的黏晶膜的剖面示意圖。 42 201221614 .yif 實施方式的勸晶膜的剖面示意圖。 晶黏晶膜的一例的 圖 剖面圖是積層有圖2所示_::: 圖4 點晶膜的 疋積層有阁〇 -例的剖面示意圖:β示黏晶膜的另一個切晶 圖5是利用圖 體晶片的例子的剖面切晶黏晶膜中的黏晶膜安裝半導 圖6是利用圖q _ 半導體晶片的例子4 晶膜中的黏晶臈三維板裝 士圖7顯不實m的勒晶膜的電磁波衰減量(dB)的測量 結果。 結果 圖8顯示實例2 膜的電磁波衰減量(dB)的測量 結果 結果 圖 結果。 圖9顯示實例3 _晶膜的電磁波衰減量(dB)的測 〇 圖10顯示實例4的點晶膜的電磁波衰減量(dB)的測 〇 圖11顯示實例5的點晶膜的電磁波衰減量卿的剩量 〇 12顯示實例6的點晶膜的電磁波衰減量(dB) 量 量
圖13顯示比較例1的黏晶膜的電磁波衰減量(dB 量結果。 、J 圖14顯示比較例2的黏晶臈的電磁波衰減量(dB)的洌 43 201221614 HUUJ jpXf 量結果。 【主要元件符號說明】 1 :基材 2 :黏著劑層 4 :半導體晶圓 5、15 :半導體晶片 6 :被黏物 7 :銲線 8 :密封樹脂 10、12 ·切晶黏晶膜 11 .切晶膜 30、32 :接著劑層 31 :電磁波遮罩層 40、41、41’ :黏晶膜 44
Claims (1)
- 201221614 七、申請專利範園: 1. 一種黏晶膜,包括:接著劑居 的電磁波遮罩層。 θ卩及由包括金屬羯 2. —種黏晶膜,包括:接著劑屑,、 電磁波遮罩層。 9以及以蒸鍍形成的 3. —種切晶黏晶膜,其在切晶膜 範圍第1或2項所述之黏晶膜,其中,積層有如巾請專利 該切晶膜包括在騎上積層料 該黏晶膜積層在該切晶膜的黏著:構’且 4. 一種黏晶膜的製造方法,用於嘈上。 第1項所述之黏晶膜,包括: 、χ造如申請專利範圍 形成接著劑層的步驟,以及 在該接著劑層上黏貼由包括金屬〜 步驟。 治的電磁波遮罩層的 5. —種黏晶膜的製造方法,用於 第2項所述之黏晶膜,包括:造如巾請專利範圍 形成接著劑層的步驟,以及 以蒸鍍在該接著劑層上形成電 6. -種半導體裝置,包括如巾麵層的步驟。 所述之黏晶膜。 3利範圍第1或2項 45
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TWI803567B (zh) * | 2018-01-24 | 2023-06-01 | 日商琳得科股份有限公司 | 長條積層片及其捲料 |
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KR20120053968A (ko) | 2012-05-29 |
US20120126379A1 (en) | 2012-05-24 |
CN102468185A (zh) | 2012-05-23 |
JP2016119493A (ja) | 2016-06-30 |
JP2012122058A (ja) | 2012-06-28 |
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