TW201206605A - Method and apparatus for improved wafer singulation - Google Patents

Method and apparatus for improved wafer singulation Download PDF

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Publication number
TW201206605A
TW201206605A TW100111494A TW100111494A TW201206605A TW 201206605 A TW201206605 A TW 201206605A TW 100111494 A TW100111494 A TW 100111494A TW 100111494 A TW100111494 A TW 100111494A TW 201206605 A TW201206605 A TW 201206605A
Authority
TW
Taiwan
Prior art keywords
laser
substrate
wafer
lasers
daf
Prior art date
Application number
TW100111494A
Other languages
English (en)
Chinese (zh)
Inventor
Yasu Osako
Bong Cho
Daragh Finn
Andrew Hooper
James O'brien
Original Assignee
Electro Scient Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electro Scient Ind Inc filed Critical Electro Scient Ind Inc
Publication of TW201206605A publication Critical patent/TW201206605A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
TW100111494A 2010-04-02 2011-04-01 Method and apparatus for improved wafer singulation TW201206605A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US32047610P 2010-04-02 2010-04-02
US13/076,238 US20110287607A1 (en) 2010-04-02 2011-03-30 Method and apparatus for improved wafer singulation

Publications (1)

Publication Number Publication Date
TW201206605A true TW201206605A (en) 2012-02-16

Family

ID=44712845

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100111494A TW201206605A (en) 2010-04-02 2011-04-01 Method and apparatus for improved wafer singulation

Country Status (7)

Country Link
US (1) US20110287607A1 (https=)
EP (1) EP2553721A2 (https=)
JP (1) JP2013524520A (https=)
KR (1) KR20130014522A (https=)
CN (1) CN102918642A (https=)
TW (1) TW201206605A (https=)
WO (1) WO2011123670A2 (https=)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US10307867B2 (en) 2014-11-05 2019-06-04 Asm Technology Singapore Pte Ltd Laser fiber array for singulating semiconductor wafers

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US8921733B2 (en) 2003-08-11 2014-12-30 Raydiance, Inc. Methods and systems for trimming circuits
JP5473414B2 (ja) * 2009-06-10 2014-04-16 株式会社ディスコ レーザ加工装置
US20110287607A1 (en) * 2010-04-02 2011-11-24 Electro Scientific Industries, Inc. Method and apparatus for improved wafer singulation
EP2409808A1 (de) 2010-07-22 2012-01-25 Bystronic Laser AG Laserbearbeitungsmaschine
US8884184B2 (en) 2010-08-12 2014-11-11 Raydiance, Inc. Polymer tubing laser micromachining
US9120181B2 (en) * 2010-09-16 2015-09-01 Coherent, Inc. Singulation of layered materials using selectively variable laser output
US8361828B1 (en) * 2011-08-31 2013-01-29 Alta Devices, Inc. Aligned frontside backside laser dicing of semiconductor films
US10239160B2 (en) 2011-09-21 2019-03-26 Coherent, Inc. Systems and processes that singulate materials
US9492990B2 (en) * 2011-11-08 2016-11-15 Picosys Incorporated Room temperature glass-to-glass, glass-to-plastic and glass-to-ceramic/semiconductor bonding
SG193711A1 (en) * 2012-03-16 2013-10-30 Advanced Laser Separation Internat Alsi N V Method of singulating a thin semiconductor wafer
JP6000700B2 (ja) * 2012-07-10 2016-10-05 株式会社ディスコ レーザー加工方法
JP5983345B2 (ja) * 2012-11-20 2016-08-31 トヨタ自動車株式会社 車両用ルーフのレーザロウ付け方法
MX381438B (es) * 2012-11-30 2025-03-04 Twb Company Llc Metodo para formar una muesca de soldadura en una pieza de metal en hoja.
WO2014130830A1 (en) 2013-02-23 2014-08-28 Raydiance, Inc. Shaping of brittle materials with controlled surface and bulk properties
JP2015109408A (ja) * 2013-10-22 2015-06-11 マイクロン テクノロジー， インク． 複合チップ、半導体装置、及び半導体装置の製造方法
EP2883647B1 (de) 2013-12-12 2019-05-29 Bystronic Laser AG Verfahren zur Konfiguration einer Laserbearbeitungsvorrichtung
DE102015212444B4 (de) * 2015-06-12 2025-01-30 Schuler Pressen Gmbh Verfahren zur Herstellung einer Blechplatine
US10549386B2 (en) * 2016-02-29 2020-02-04 Xerox Corporation Method for ablating openings in unsupported layers
JP6666173B2 (ja) * 2016-03-09 2020-03-13 株式会社ディスコ レーザー加工装置
KR20170140969A (ko) * 2016-06-14 2017-12-22 (주)제이티 반도체칩모듈의 제조방법
US10720360B2 (en) 2016-07-29 2020-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor die singulation and structures formed thereby
US10347534B2 (en) 2017-09-12 2019-07-09 Nxp B.V. Variable stealth laser dicing process
KR102158832B1 (ko) * 2018-11-20 2020-09-22 한화정밀기계 주식회사 웨이퍼 절단 방법 및 절단 장치
KR102174928B1 (ko) * 2019-02-01 2020-11-05 레이저쎌 주식회사 멀티 빔 레이저 디본딩 장치 및 방법
US20220399234A1 (en) * 2021-06-15 2022-12-15 Nxp B.V. Semiconductor die singulation
US20260040958A1 (en) * 2024-07-31 2026-02-05 Texas Instruments Incorporated Isolation for chip on lead device and manufacturing method

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US5552345A (en) * 1993-09-22 1996-09-03 Harris Corporation Die separation method for silicon on diamond circuit structures
US6562698B2 (en) * 1999-06-08 2003-05-13 Kulicke & Soffa Investments, Inc. Dual laser cutting of wafers
SG108262A1 (en) * 2001-07-06 2005-01-28 Inst Data Storage Method and apparatus for cutting a multi-layer substrate by dual laser irradiation
JP2004186200A (ja) * 2002-11-29 2004-07-02 Sekisui Chem Co Ltd 半導体チップの製造方法
US7129114B2 (en) * 2004-03-10 2006-10-31 Micron Technology, Inc. Methods relating to singulating semiconductor wafers and wafer scale assemblies
JP4736379B2 (ja) * 2004-09-07 2011-07-27 日立化成工業株式会社 接着シート付き半導体素子の製造方法、接着シート、及びダイシングテープ一体型接着シート
KR100648898B1 (ko) * 2005-08-18 2006-11-27 주식회사 젯텍 2개의 레이저를 이용한 웨이퍼의 분할방법 및 장치
JP2007081037A (ja) * 2005-09-13 2007-03-29 Disco Abrasive Syst Ltd デバイスおよびその製造方法
US8598490B2 (en) * 2008-03-31 2013-12-03 Electro Scientific Industries, Inc. Methods and systems for laser processing a workpiece using a plurality of tailored laser pulse shapes
US8383984B2 (en) * 2010-04-02 2013-02-26 Electro Scientific Industries, Inc. Method and apparatus for laser singulation of brittle materials
US20110287607A1 (en) * 2010-04-02 2011-11-24 Electro Scientific Industries, Inc. Method and apparatus for improved wafer singulation
KR20120043933A (ko) * 2010-10-27 2012-05-07 삼성전자주식회사 반도체 장치의 제조방법
US8673741B2 (en) * 2011-06-24 2014-03-18 Electro Scientific Industries, Inc Etching a laser-cut semiconductor before dicing a die attach film (DAF) or other material layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10307867B2 (en) 2014-11-05 2019-06-04 Asm Technology Singapore Pte Ltd Laser fiber array for singulating semiconductor wafers
TWI670798B (zh) * 2014-11-05 2019-09-01 先進科技新加坡有限公司 用於單切半導體晶元的鐳射纖維陣列

Also Published As

Publication number Publication date
JP2013524520A (ja) 2013-06-17
KR20130014522A (ko) 2013-02-07
EP2553721A2 (en) 2013-02-06
US20110287607A1 (en) 2011-11-24
WO2011123670A3 (en) 2012-01-12
CN102918642A (zh) 2013-02-06
WO2011123670A2 (en) 2011-10-06

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