TW201130050A - Hardmask materials - Google Patents

Hardmask materials

Info

Publication number
TW201130050A
TW201130050A TW099140866A TW99140866A TW201130050A TW 201130050 A TW201130050 A TW 201130050A TW 099140866 A TW099140866 A TW 099140866A TW 99140866 A TW99140866 A TW 99140866A TW 201130050 A TW201130050 A TW 201130050A
Authority
TW
Taiwan
Prior art keywords
hardmask
hardness
film
germanium
mpa
Prior art date
Application number
TW099140866A
Other languages
English (en)
Other versions
TWI505364B (zh
Inventor
Vishwanathan Rangarajan
George Andrew Antonelli
Ananda Banerji
Schravendijk Bart Van
Original Assignee
Novellus Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/631,709 external-priority patent/US8178443B2/en
Priority claimed from US12/631,691 external-priority patent/US8247332B2/en
Application filed by Novellus Systems Inc filed Critical Novellus Systems Inc
Publication of TW201130050A publication Critical patent/TW201130050A/zh
Application granted granted Critical
Publication of TWI505364B publication Critical patent/TWI505364B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76813—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving a partial via etch
TW099140866A 2009-12-04 2010-11-25 硬遮罩材料 TWI505364B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/631,709 US8178443B2 (en) 2009-12-04 2009-12-04 Hardmask materials
US12/631,691 US8247332B2 (en) 2009-12-04 2009-12-04 Hardmask materials

Publications (2)

Publication Number Publication Date
TW201130050A true TW201130050A (en) 2011-09-01
TWI505364B TWI505364B (zh) 2015-10-21

Family

ID=44130378

Family Applications (2)

Application Number Title Priority Date Filing Date
TW104126278A TWI547997B (zh) 2009-12-04 2010-11-25 硬遮罩材料
TW099140866A TWI505364B (zh) 2009-12-04 2010-11-25 硬遮罩材料

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW104126278A TWI547997B (zh) 2009-12-04 2010-11-25 硬遮罩材料

Country Status (4)

Country Link
JP (1) JP5656010B2 (zh)
KR (2) KR101798235B1 (zh)
CN (2) CN102097364B (zh)
TW (2) TWI547997B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI615906B (zh) * 2016-02-09 2018-02-21 台灣積體電路製造股份有限公司 半導體裝置及其製造方法
TWI713687B (zh) * 2016-10-01 2020-12-21 美商應用材料股份有限公司 用於增強性蝕刻與選擇性移除的硬遮罩膜的化學修飾
TWI734876B (zh) * 2016-12-26 2021-08-01 日商東京威力科創股份有限公司 基板處理方法、基板處理裝置、基板處理系統、基板處理系統的控制裝置、半導體基板的製造方法及半導體基板

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5723243B2 (ja) * 2011-08-11 2015-05-27 東京エレクトロン株式会社 成膜方法、これを含む半導体装置の製造方法、成膜装置、及び半導体装置
CN103258779B (zh) * 2012-02-17 2015-05-20 中芯国际集成电路制造(上海)有限公司 铜互连结构及其制造方法
JP5860734B2 (ja) * 2012-03-13 2016-02-16 株式会社ライテック研究所 硬質皮膜被覆部材およびその製造方法
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US9234276B2 (en) 2013-05-31 2016-01-12 Novellus Systems, Inc. Method to obtain SiC class of films of desired composition and film properties
US10832904B2 (en) 2012-06-12 2020-11-10 Lam Research Corporation Remote plasma based deposition of oxygen doped silicon carbide films
JP6007031B2 (ja) * 2012-08-23 2016-10-12 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP2014078579A (ja) * 2012-10-10 2014-05-01 Renesas Electronics Corp 半導体装置の製造方法
KR102178326B1 (ko) * 2012-12-18 2020-11-13 램 리써치 코포레이션 산소-함유 세라믹 하드 마스크들 및 관련 습식-세정들
JP6111097B2 (ja) * 2013-03-12 2017-04-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6111106B2 (ja) * 2013-03-19 2017-04-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US10767259B2 (en) 2013-07-19 2020-09-08 Agilent Technologies, Inc. Components with an atomic layer deposition coating and methods of producing the same
US20150024152A1 (en) * 2013-07-19 2015-01-22 Agilent Technologies, Inc. Metal components with inert vapor phase coating on internal surfaces
CN104947085B (zh) * 2014-03-31 2017-12-19 中芯国际集成电路制造(上海)有限公司 掩膜的沉积方法、掩膜及半导体器件的刻蚀方法
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
KR102130459B1 (ko) * 2016-02-29 2020-07-07 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
KR102084296B1 (ko) 2016-12-15 2020-03-03 도쿄엘렉트론가부시키가이샤 성막 방법, 붕소 막 및 성막 장치
US9837270B1 (en) * 2016-12-16 2017-12-05 Lam Research Corporation Densification of silicon carbide film using remote plasma treatment
KR102020211B1 (ko) * 2017-01-09 2019-11-04 주식회사 테스 탄소 및/또는 보론를 포함하는 비정질 실리콘막의 형성 방법
CN110249410B (zh) * 2017-02-01 2023-07-04 应用材料公司 用于硬掩模应用的硼掺杂碳化钨
JP6914107B2 (ja) * 2017-06-05 2021-08-04 東京エレクトロン株式会社 ボロン膜の除去方法
CN107742607B (zh) * 2017-08-31 2021-05-11 重庆中科渝芯电子有限公司 一种用icp干法刻蚀制作薄膜电阻的方法
US10474027B2 (en) * 2017-11-13 2019-11-12 Macronix International Co., Ltd. Method for forming an aligned mask
JP7049883B2 (ja) * 2018-03-28 2022-04-07 東京エレクトロン株式会社 ボロン系膜の成膜方法および成膜装置
GB201813467D0 (en) * 2018-08-17 2018-10-03 Spts Technologies Ltd Method of depositing silicon nitride
CN113195786A (zh) 2018-10-19 2021-07-30 朗姆研究公司 用于间隙填充的远程氢等离子体暴露以及掺杂或未掺杂硅碳化物沉积
TW202111147A (zh) * 2019-08-12 2021-03-16 美商應用材料股份有限公司 低k介電膜
US11508573B2 (en) * 2019-12-31 2022-11-22 Micron Technology, Inc. Plasma doping of gap fill materials
US11676813B2 (en) 2020-09-18 2023-06-13 Applied Materials, Inc. Doping semiconductor films
CN114664649B (zh) * 2022-05-19 2022-09-20 浙江大学杭州国际科创中心 碳化硅高深宽比槽刻蚀工艺优化方法
CN115241126B (zh) * 2022-09-21 2022-12-30 广州粤芯半导体技术有限公司 通孔刻蚀方法以及金属互连结构的制作方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA868641A (en) * 1971-04-13 L. Cuomo Jerome Method for etching silicon nitride films with sharp edge definition
US4895789A (en) * 1988-03-29 1990-01-23 Seiko Instruments Inc. Method of manufacturing non-linear resistive element array
KR100219550B1 (ko) * 1996-08-21 1999-09-01 윤종용 반사방지막 및 이를 이용한 패턴형성방법
US6875687B1 (en) * 1999-10-18 2005-04-05 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
JP3430091B2 (ja) * 1999-12-01 2003-07-28 Ｎｅｃエレクトロニクス株式会社 エッチングマスク及びエッチングマスクを用いたコンタクトホールの形成方法並びにその方法で形成した半導体装置
US6794311B2 (en) * 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
TW535253B (en) * 2000-09-08 2003-06-01 Applied Materials Inc Plasma treatment of silicon carbide films
US6803313B2 (en) * 2002-09-27 2004-10-12 Advanced Micro Devices, Inc. Method for forming a hardmask employing multiple independently formed layers of a pecvd material to reduce pinholes
US7238393B2 (en) * 2003-02-13 2007-07-03 Asm Japan K.K. Method of forming silicon carbide films
CN1902550B (zh) * 2003-12-26 2012-07-18 日产化学工业株式会社 形成硬掩模用涂布型氮化膜的组合物
US7132374B2 (en) * 2004-08-17 2006-11-07 Cecilia Y. Mak Method for depositing porous films
TW200631095A (en) * 2005-01-27 2006-09-01 Koninkl Philips Electronics Nv A method of manufacturing a semiconductor device
JP4837370B2 (ja) * 2005-12-05 2011-12-14 東京エレクトロン株式会社 成膜方法
US7718518B2 (en) * 2005-12-16 2010-05-18 Asm International N.V. Low temperature doped silicon layer formation
JP5040913B2 (ja) * 2006-03-31 2012-10-03 富士通セミコンダクター株式会社 半導体装置の製造方法
US7744746B2 (en) * 2006-03-31 2010-06-29 Exxonmobil Research And Engineering Company FCC catalyst stripper configuration
US7528078B2 (en) * 2006-05-12 2009-05-05 Freescale Semiconductor, Inc. Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer
US7550758B2 (en) * 2006-10-31 2009-06-23 Atmel Corporation Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator
US20100327413A1 (en) * 2007-05-03 2010-12-30 Lam Research Corporation Hardmask open and etch profile control with hardmask open

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI615906B (zh) * 2016-02-09 2018-02-21 台灣積體電路製造股份有限公司 半導體裝置及其製造方法
US10535558B2 (en) 2016-02-09 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming trenches
US11232979B2 (en) 2016-02-09 2022-01-25 Taiwan Semiconductor Manufacturing Company, Ltd Method of forming trenches
TWI713687B (zh) * 2016-10-01 2020-12-21 美商應用材料股份有限公司 用於增強性蝕刻與選擇性移除的硬遮罩膜的化學修飾
TWI745171B (zh) * 2016-10-01 2021-11-01 美商應用材料股份有限公司 用於增強性蝕刻與選擇性移除的硬遮罩膜的化學修飾
TWI734876B (zh) * 2016-12-26 2021-08-01 日商東京威力科創股份有限公司 基板處理方法、基板處理裝置、基板處理系統、基板處理系統的控制裝置、半導體基板的製造方法及半導體基板

Also Published As

Publication number Publication date
TW201543574A (zh) 2015-11-16
JP2011139033A (ja) 2011-07-14
TWI547997B (zh) 2016-09-01
KR101907802B1 (ko) 2018-12-05
CN102097364A (zh) 2011-06-15
CN102097364B (zh) 2015-10-14
KR101798235B1 (ko) 2017-11-15
KR20110063386A (ko) 2011-06-10
CN105185707A (zh) 2015-12-23
JP5656010B2 (ja) 2015-01-21
TWI505364B (zh) 2015-10-21
KR20170126827A (ko) 2017-11-20
CN105185707B (zh) 2018-06-01

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