TW201124555A - Film forming device, film forming method and storage medium - Google Patents
Film forming device, film forming method and storage medium Download PDFInfo
- Publication number
- TW201124555A TW201124555A TW099131354A TW99131354A TW201124555A TW 201124555 A TW201124555 A TW 201124555A TW 099131354 A TW099131354 A TW 099131354A TW 99131354 A TW99131354 A TW 99131354A TW 201124555 A TW201124555 A TW 201124555A
- Authority
- TW
- Taiwan
- Prior art keywords
- film forming
- film
- container
- gas
- temperature
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 29
- 238000003860 storage Methods 0.000 title claims description 4
- 239000002994 raw material Substances 0.000 claims abstract description 33
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 23
- 239000010941 cobalt Substances 0.000 claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 230000007246 mechanism Effects 0.000 claims abstract description 19
- 239000007789 gas Substances 0.000 claims description 110
- 238000012545 processing Methods 0.000 claims description 71
- 239000000463 material Substances 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 34
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 230000000977 initiatory effect Effects 0.000 claims description 11
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 4
- 235000013339 cereals Nutrition 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 8
- 238000000354 decomposition reaction Methods 0.000 abstract 2
- 238000005336 cracking Methods 0.000 description 21
- 239000003085 diluting agent Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 6
- 238000003776 cleavage reaction Methods 0.000 description 6
- 238000010790 dilution Methods 0.000 description 6
- 239000012895 dilution Substances 0.000 description 6
- 238000002309 gasification Methods 0.000 description 6
- 230000007017 scission Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910021012 Co2(CO)8 Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 238000004227 thermal cracking Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000004455 differential thermal analysis Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- 229910019044 CoSix Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 241000237858 Gastropoda Species 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- QJNPLUUKHIGHOW-UHFFFAOYSA-N cobalt samarium Chemical compound [Co].[Co].[Sm] QJNPLUUKHIGHOW-UHFFFAOYSA-N 0.000 description 1
- UMYVESYOFCWRIW-UHFFFAOYSA-N cobalt;methanone Chemical compound O=C=[Co] UMYVESYOFCWRIW-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000006166 lysate Substances 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- FBWNMEQMRUMQSO-UHFFFAOYSA-N tergitol NP-9 Chemical compound CCCCCCCCCC1=CC=C(OCCOCCOCCOCCOCCOCCOCCOCCOCCO)C=C1 FBWNMEQMRUMQSO-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009215416A JP2011063850A (ja) | 2009-09-17 | 2009-09-17 | 成膜装置、成膜方法および記憶媒体 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201124555A true TW201124555A (en) | 2011-07-16 |
Family
ID=43758527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099131354A TW201124555A (en) | 2009-09-17 | 2010-09-16 | Film forming device, film forming method and storage medium |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20120171365A1 (enExample) |
| JP (1) | JP2011063850A (enExample) |
| KR (1) | KR20120053032A (enExample) |
| TW (1) | TW201124555A (enExample) |
| WO (1) | WO2011033918A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783589A (zh) * | 2015-11-24 | 2017-05-31 | 泰拉半导体株式会社 | 供气及排气装置 |
| TWI668316B (zh) * | 2014-10-24 | 2019-08-11 | 德商愛思強歐洲公司 | 在數個位置上被饋送稀釋用氣流的經調溫之進氣管 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5659041B2 (ja) * | 2011-02-24 | 2015-01-28 | 東京エレクトロン株式会社 | 成膜方法および記憶媒体 |
| JP5656683B2 (ja) * | 2011-02-24 | 2015-01-21 | 東京エレクトロン株式会社 | 成膜方法および記憶媒体 |
| JP2012198449A (ja) | 2011-03-23 | 2012-10-18 | Nitto Denko Corp | 偏光膜および偏光フィルム |
| CN109072430A (zh) * | 2016-04-12 | 2018-12-21 | 皮考逊公司 | 通过ald进行涂覆以用于抑制金属晶须 |
| US20180134738A1 (en) * | 2016-11-01 | 2018-05-17 | Versum Materials Us, Llc | Disubstituted alkyne dicobalt hexacarbonyl compounds, method of making and method of use thereof |
| US12315466B2 (en) | 2023-04-26 | 2025-05-27 | JoysonQuin Automotive Systems North America, LLC | Front-lit user interface |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7270848B2 (en) * | 2004-11-23 | 2007-09-18 | Tokyo Electron Limited | Method for increasing deposition rates of metal layers from metal-carbonyl precursors |
| US7279421B2 (en) * | 2004-11-23 | 2007-10-09 | Tokyo Electron Limited | Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors |
| US20070218200A1 (en) * | 2006-03-16 | 2007-09-20 | Kenji Suzuki | Method and apparatus for reducing particle formation in a vapor distribution system |
| US20070234955A1 (en) * | 2006-03-29 | 2007-10-11 | Tokyo Electron Limited | Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system |
| US20070237895A1 (en) * | 2006-03-30 | 2007-10-11 | Tokyo Electron Limited | Method and system for initiating a deposition process utilizing a metal carbonyl precursor |
-
2009
- 2009-09-17 JP JP2009215416A patent/JP2011063850A/ja active Pending
-
2010
- 2010-08-27 WO PCT/JP2010/064574 patent/WO2011033918A1/ja not_active Ceased
- 2010-08-27 KR KR1020127006193A patent/KR20120053032A/ko not_active Ceased
- 2010-08-27 US US13/395,683 patent/US20120171365A1/en not_active Abandoned
- 2010-09-16 TW TW099131354A patent/TW201124555A/zh unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI668316B (zh) * | 2014-10-24 | 2019-08-11 | 德商愛思強歐洲公司 | 在數個位置上被饋送稀釋用氣流的經調溫之進氣管 |
| CN106783589A (zh) * | 2015-11-24 | 2017-05-31 | 泰拉半导体株式会社 | 供气及排气装置 |
| CN106783589B (zh) * | 2015-11-24 | 2021-11-23 | 圆益Ips股份有限公司 | 供气及排气装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20120171365A1 (en) | 2012-07-05 |
| WO2011033918A1 (ja) | 2011-03-24 |
| KR20120053032A (ko) | 2012-05-24 |
| JP2011063850A (ja) | 2011-03-31 |
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