JP2011063850A - 成膜装置、成膜方法および記憶媒体 - Google Patents

成膜装置、成膜方法および記憶媒体 Download PDF

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Publication number
JP2011063850A
JP2011063850A JP2009215416A JP2009215416A JP2011063850A JP 2011063850 A JP2011063850 A JP 2011063850A JP 2009215416 A JP2009215416 A JP 2009215416A JP 2009215416 A JP2009215416 A JP 2009215416A JP 2011063850 A JP2011063850 A JP 2011063850A
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JP
Japan
Prior art keywords
film
film forming
raw material
temperature
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009215416A
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English (en)
Japanese (ja)
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JP2011063850A5 (enExample
Inventor
Shuji Shinonome
秀司 東雲
Yasuhiko Kojima
康彦 小島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2009215416A priority Critical patent/JP2011063850A/ja
Priority to KR1020127006193A priority patent/KR20120053032A/ko
Priority to PCT/JP2010/064574 priority patent/WO2011033918A1/ja
Priority to US13/395,683 priority patent/US20120171365A1/en
Priority to TW099131354A priority patent/TW201124555A/zh
Publication of JP2011063850A publication Critical patent/JP2011063850A/ja
Publication of JP2011063850A5 publication Critical patent/JP2011063850A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2009215416A 2009-09-17 2009-09-17 成膜装置、成膜方法および記憶媒体 Pending JP2011063850A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009215416A JP2011063850A (ja) 2009-09-17 2009-09-17 成膜装置、成膜方法および記憶媒体
KR1020127006193A KR20120053032A (ko) 2009-09-17 2010-08-27 성막 장치, 성막 방법 및 기억 매체
PCT/JP2010/064574 WO2011033918A1 (ja) 2009-09-17 2010-08-27 成膜装置、成膜方法および記憶媒体
US13/395,683 US20120171365A1 (en) 2009-09-17 2010-08-27 Film forming apparatus, film forming method and storage medium
TW099131354A TW201124555A (en) 2009-09-17 2010-09-16 Film forming device, film forming method and storage medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009215416A JP2011063850A (ja) 2009-09-17 2009-09-17 成膜装置、成膜方法および記憶媒体

Publications (2)

Publication Number Publication Date
JP2011063850A true JP2011063850A (ja) 2011-03-31
JP2011063850A5 JP2011063850A5 (enExample) 2011-05-19

Family

ID=43758527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009215416A Pending JP2011063850A (ja) 2009-09-17 2009-09-17 成膜装置、成膜方法および記憶媒体

Country Status (5)

Country Link
US (1) US20120171365A1 (enExample)
JP (1) JP2011063850A (enExample)
KR (1) KR20120053032A (enExample)
TW (1) TW201124555A (enExample)
WO (1) WO2011033918A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012172252A (ja) * 2011-02-24 2012-09-10 Tokyo Electron Ltd 成膜方法および記憶媒体
EP2503365A1 (en) 2011-03-23 2012-09-26 Nitto Denko Corporation Polarizing membrane and polarizing film
JP2018080162A (ja) * 2016-11-01 2018-05-24 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 二置換アルキンジコバルトヘキサカルボニル化合物、その製造方法、及びその使用方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5659041B2 (ja) * 2011-02-24 2015-01-28 東京エレクトロン株式会社 成膜方法および記憶媒体
DE102014115497A1 (de) * 2014-10-24 2016-05-12 Aixtron Se Temperierte Gaszuleitung mit an mehreren Stellen eingespeisten Verdünnungsgasströmen
KR101941097B1 (ko) * 2015-11-24 2019-01-23 주식회사 원익테라세미콘 가스 공급 및 배기 장치
CN109072430A (zh) * 2016-04-12 2018-12-21 皮考逊公司 通过ald进行涂覆以用于抑制金属晶须
US12315466B2 (en) 2023-04-26 2025-05-27 JoysonQuin Automotive Systems North America, LLC Front-lit user interface

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007247062A (ja) * 2006-03-16 2007-09-27 Tokyo Electron Ltd パーティクルの形成を低減する金属層成膜システム、気相原料分配システムおよび方法
JP2007270355A (ja) * 2006-03-30 2007-10-18 Tokyo Electron Ltd 金属カルボニル先駆体を利用した堆積プロセスの初期化方法及びシステム
JP2007277719A (ja) * 2006-03-29 2007-10-25 Tokyo Electron Ltd 薄膜堆積システム内における基板の周辺端部での一酸化炭素中毒を抑制する方法及び装置
JP2008520835A (ja) * 2004-11-23 2008-06-19 東京エレクトロン株式会社 金属カルボニル前駆体からの金属層の成膜速度を上げる方法
JP2008520834A (ja) * 2004-11-23 2008-06-19 東京エレクトロン株式会社 金属カルボニル前駆体から金属層を堆積する方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008520835A (ja) * 2004-11-23 2008-06-19 東京エレクトロン株式会社 金属カルボニル前駆体からの金属層の成膜速度を上げる方法
JP2008520834A (ja) * 2004-11-23 2008-06-19 東京エレクトロン株式会社 金属カルボニル前駆体から金属層を堆積する方法
JP2007247062A (ja) * 2006-03-16 2007-09-27 Tokyo Electron Ltd パーティクルの形成を低減する金属層成膜システム、気相原料分配システムおよび方法
JP2007277719A (ja) * 2006-03-29 2007-10-25 Tokyo Electron Ltd 薄膜堆積システム内における基板の周辺端部での一酸化炭素中毒を抑制する方法及び装置
JP2007270355A (ja) * 2006-03-30 2007-10-18 Tokyo Electron Ltd 金属カルボニル先駆体を利用した堆積プロセスの初期化方法及びシステム

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012172252A (ja) * 2011-02-24 2012-09-10 Tokyo Electron Ltd 成膜方法および記憶媒体
EP2503365A1 (en) 2011-03-23 2012-09-26 Nitto Denko Corporation Polarizing membrane and polarizing film
JP2018080162A (ja) * 2016-11-01 2018-05-24 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 二置換アルキンジコバルトヘキサカルボニル化合物、その製造方法、及びその使用方法

Also Published As

Publication number Publication date
US20120171365A1 (en) 2012-07-05
WO2011033918A1 (ja) 2011-03-24
TW201124555A (en) 2011-07-16
KR20120053032A (ko) 2012-05-24

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